Method of passivating of low dielectric materials in wafer processing
Номер патента: AU2003220039A1
Опубликовано: 22-09-2003
Автор(ы): Dorel Ioan Toma, Paul Shilling
Принадлежит: Supercritical Systems Inc
Опубликовано: 22-09-2003
Автор(ы): Dorel Ioan Toma, Paul Shilling
Принадлежит: Supercritical Systems Inc
Method of forming silicon-containing insulation film having low dielectric constant and low diffusion coefficient
Номер патента: US20060183341A1. Автор: Satoshi Takahashi,Naoto Tsuji,Kiyohiro Matsushita,Nathan Kameling. Владелец: ASM Japan KK. Дата публикации: 2006-08-17.