Semiconductor photodetector device and method of manufacturing the same
Номер патента: CA2007670A1
Опубликовано: 31-07-1990
Автор(ы): Keiji Takaoka, Kenji Matsumoto, Motoyasu Morinaga, Nobuo Suzuki, Tetsuo Sadamasa
Принадлежит: Toshiba Corp
Опубликовано: 31-07-1990
Автор(ы): Keiji Takaoka, Kenji Matsumoto, Motoyasu Morinaga, Nobuo Suzuki, Tetsuo Sadamasa
Принадлежит: Toshiba Corp
Реферат: Abstract of the Disclosure Disclosed are an avalanche photodiode and a manufacturing method thereof. An n?-type InGaAs light absorption layer and n?-type InP window layer are formed on an n-type InP substrate by crystal growth, in the order mentioned. A depression is formed in a selected surface portion of the window layer, and n-type impurities are doped into the bottom of the depression, to thereby form an n-type high concentration region. Further, n?-type crystal-grown InP layer is formed in the depression in such a way as to fill the depression. A guard ring is formed around the depression by the doping of p-type impuri-ties. By doping p-type impurities into the window layer, a p-type high concentration region is formed in the window layer in a manner completely surrounding the interface between the n-type high concentration region and the crystal-grown InP layer. The n-type and p-type high concentration regions define a junction serving as a light-receiving region. Since the inter-face of the crystal-grown InP layer, which may not have a satisfactory crystalline structure, is located within the p-type high concentration region, that interface is not supplied with a high electric field during use. Accordingly, the performance of the avalanche photodiode is not influenced by the interface.
Manganese tin oxide based transparent conducting oxide and transparent conductive film and method for fabricating transparent conductive film using the same
Номер патента: US09704610B2. Автор: Ji-Won Choi,Jin Sang Kim,Won-Kook Choi,Haena Yim. Владелец: Korea Advanced Institute of Science and Technology KAIST. Дата публикации: 2017-07-11.