Method of deposition
Номер патента: AU5531294A
Опубликовано: 08-06-1994
Автор(ы): James Cairns, James Thomson
Принадлежит: UNIVERSITY OF DUNDEE
Опубликовано: 08-06-1994
Автор(ы): James Cairns, James Thomson
Принадлежит: UNIVERSITY OF DUNDEE
Реферат: There is described a method of chemically depositing a substance. The method is of utility in the direct manufacture of integrated circuits and in the manufacture of a photomask for use in production of integrated circuits. The method involves the use of a compound which degrades into a deposit and a residue when a radiant beam (e.g. a laser beam) or a particle beam (e.g. an electron beam) is applied. The residue and any unreacted compound may be washed off the substrate to which it has been applied. Nanoscale dimensions of the deposit can be achieved. A particularly suitable organometallic compound is tetra-sec butyl diaurum difluoride.
Conductive film and method of making same
Номер патента: US09847211B2. Автор: Yu Zhu,Tianda He. Владелец: UNIVERSITY OF AKRON. Дата публикации: 2017-12-19.