Nano semiconductor switch device using electromechanism of cabon nano tube and method of fabricating the same and semiconductor memory device using electromechanism of cabon nano tube and method for driving the same .

Nano semiconductor switch device using electromechanism of cabon nano tube and method of fabricating the same and semiconductor memory device using electromechanism of cabon nano tube and method for driving the same

Номер патента: KR100652410B1
Опубликовано: 01-12-2006
Автор(ы): 이선우, 최영문
Принадлежит: 삼성전자주식회사
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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