Heavily doped region in double-diffused source mosfet (ldmos) transistor and a method of fabricating the same
Номер патента: EP2225771A2
Опубликовано: 08-09-2010
Автор(ы): Budong You, Marco A. Zuniga
Принадлежит: Volterra Semiconductor LLC
Опубликовано: 08-09-2010
Автор(ы): Budong You, Marco A. Zuniga
Принадлежит: Volterra Semiconductor LLC
Реферат: A transistor includes a source, a drain and a gate. The source includes a p-doped p-body, a p+ region overlapping the p-body, an n+ region overlapping the p-body in proximity to the p+ region, and an n-doped source, heavily double-diffused (SHDD) region, only into the source region of the transistor, the SHDD region having a depth about equal to that of the first n+ region and overlapping the first n+ region. The drain includes a second n+ region and an n-doped shallow drain overlapping the second n+ region. The gate includes a gate oxide and a conductive material over the gate oxide. The SHDD region extends further laterally than the first n+ region beneath the gate oxide. The SHDD region is implanted using a dopant concentration greater than that of the n-doped shallow drain but less than that of the first n+ region.
Heavily doped region in double-diffused source mosfet (ldmos) transistor and a method of fabricating the same
Номер патента: WO2009086517A2. Автор: Marco A. Zuniga,Budong You. Владелец: Volterra Semiconductor Corporation. Дата публикации: 2009-07-09.