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Semiconductor memory device and method of verifying the same

Номер патента: US20080123428A1
Опубликовано: 29-05-2008
Автор(ы): Kazunari Kido, Makoto Senoo, Shunichi Toyama, Yoshihiro Tsukidate
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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