Split capacitors scheme for suppressing overshoot voltage glitches in class d amplifier output stage
Номер патента: EP2845313A1
Опубликовано: 11-03-2015
Автор(ы): Chenling HUANG, Haibo Fei, Matthew D. Sienko
Принадлежит: Qualcomm Inc
Опубликовано: 11-03-2015
Автор(ы): Chenling HUANG, Haibo Fei, Matthew D. Sienko
Принадлежит: Qualcomm Inc
Реферат: A class D power amplifier is provided. The class D power amplifier includes a class D driver circuit having a plurality of output transistors, at least one active clamp circuit coupled to at least one output transistor of the plurality of output transistors, and at least one filter bank circuit coupled to the at least one active clamp circuit for controlling a voltage of the at least one output transistor. Accordingly, a voltage across a drain node and source node (VDS), a voltage across a gate node and source node (VGS), and a voltage across the gate node and drain node (VGD) of the output transistors is reduced to increase reliability of the power amplifier while consuming less power and utilizing less die area.
Split Capacitors Scheme for Suppressing Overshoot Voltage Glitches in Class D Amplifier Output Stage
Номер патента: US20130293298A1. Автор: Matthew D. Sienko,Haibo Fei,Chenling HUANG. Владелец: Qualcomm Inc. Дата публикации: 2013-11-07.