Nanocapsules containing charged particles, their uses and methods of forming the same
Номер патента: WO2000048195A9
Опубликовано: 01-11-2001
Автор(ы): David Tomanek, Kwon Young-Kyun, Mark W Brehob, Richard Enbody
Принадлежит: David Tomanek, Mark W Brehob, Richard Enbody, Univ Michigan State, Young Kyun Kwon
Опубликовано: 01-11-2001
Автор(ы): David Tomanek, Kwon Young-Kyun, Mark W Brehob, Richard Enbody
Принадлежит: David Tomanek, Mark W Brehob, Richard Enbody, Univ Michigan State, Young Kyun Kwon
Реферат: The present invention relates to nanomechanisms (10) employed in nanomemory elements (30) which, in turn, are employable in nanoscale memory devices (50). The nanoscale memory devices combine high switching speed, high packing density and stability with non-volatility of the stored data.
Magnetic random access memory and method of reducing critical current of the same
Номер патента: US20080205123A1. Автор: Te-Ho Wu,Alberto Canizo Cabrera,Lin-Hsiu Ye. Владелец: National Yunlin University of Science and Technology. Дата публикации: 2008-08-28.