Compositionally graded bulk heterojunction devices and methods of manufacturing the same.

Compositionally graded bulk heterojunction devices and methods of manufacturing the same

Номер патента: US09985231B2
Опубликовано: 29-05-2018
Автор(ы): Jinsong Huang, Zhengguo Xiao
Принадлежит: NuTech Ventures Inc
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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