Nonvolatile memory device and method of manufacturing the same.

Nonvolatile memory device and method of manufacturing the same

Номер патента: US09466704B2
Опубликовано: 11-10-2016
Автор(ы): Changseok Kang, Jungdal CHOI, Sung-Il Chang
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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