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VERTICAL CHANNEL MEMORY DEVICES WITH NONUNIFORM GATE ELECTRODES AND METHODS OF FABRICATING THE SAME

Номер патента: US20140004676A1
Опубликовано: 02-01-2014
Автор(ы): CHA Se-ho, Eom Daehong, Kim Kwangsu, Kim Kyunghyun, YANG Jun-youl
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