Sputtered Piezoelectric Material

Номер патента: US20120177815A1. Автор: Jeffrey Birkmeyer, Youming Li. Владелец: Fujifilm Corp. Дата публикации: 12-07-2012.
Piezoelectric actuators having a composition of Pb 1.00+x (Zr 0.52 Ti 0.48 ) 1.00−y O 3 Nb y , where x>−0.02 and y>0 are described. The piezoelectric material can have a Perovskite, which can enable good bending action when a bias is applied across the actuator.

Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

Номер патента: US20120188313A1. Автор: Kazuya Kitada. Владелец: Seiko Epson Corp. Дата публикации: 26-07-2012.
A piezoelectric element, comprises a piezoelectric layer consisting of a complex oxide represented as a mixed crystal including bismuth ferrate and barium titanate and an electrode provided to the piezoelectric layer. The piezoelectric layer contains 1 to 15 mol % of lithium relative to the complex oxide.

Piezoelectric element, liquid ejecting head, and liquid ejecting apparatus

Номер патента: US20120268533A1. Автор: Koichi Morozumi, Tomohiro Sakai. Владелец: Seiko Epson Corp. Дата публикации: 25-10-2012.
A piezoelectric element comprises a first electrode including platinum, a piezoelectric layer disposed above the first electrode, made of a complex oxide having a perovskite structure containing at least bismuth, and a second electrode disposed above the piezoelectric layer. An oxide containing bismuth and platinum is disposed at the interface of the piezoelectric layer with the first electrode.

Method of manufacturing a vibratory actuator for a touch panel with haptic feedback

Номер патента: US20120313874A1. Автор: Cedrick Chappaz, Olivier Girard, Pascal Ancey, Serge Laffont, Yves Gilot. Владелец: STMicroelectronics Grenoble 2 SAS, STMICROELECTRONICS SA. Дата публикации: 13-12-2012.
The disclosure relates to a method of manufacturing vibratory elements, comprising forming on a substrate a multilayer structure by an integrated circuit manufacturing method, the multilayer structure comprising an element susceptible of vibrating when it is subjected to an electrical signal, and electrodes for transmitting an electrical signal to the vibratory element, the vibratory element comprising a mechanical coupling face that is able to transmit to control element vibrations perceptible by a user.

Acoustic wave device

Номер патента: US20120319802A1. Автор: Hiroaki Ochiai, Junya Nishii, Tsuyoshi Nakai. Владелец: Kyocera Corp. Дата публикации: 20-12-2012.
A SAW device ( 1 ) comprises a substrate ( 3 ); SAW elements ( 10 ) on a first main surface ( 3 a ) of the substrate ( 3 ); first lines (intermediate lines ( 29 ) and output side lines ( 31 )) that are disposed upon the first main face ( 3 a ) and connected to the SAW elements ( 10 ); an insulator ( 21 ) that is layered upon the first lines; second lines (a second ground line ( 33 b ) and a third ground line ( 33 c )) that are layered upon the insulator ( 21 ) and configure three-dimensional wiring parts ( 39 ) with the first lines; and a cover ( 5 ) that seals the SAW elements ( 10 ) and the three-dimensional wiring parts ( 39 ). Wiring spaces ( 53 ), formed between the first main face ( 3 a ) and the cover ( 5 ), houses the three-dimensional wiring parts ( 39 ), without housing the SAW elements ( 10 ).

Light position controlling apparatus and method of manufacturing the same

Номер патента: US20130088764A1. Автор: Min-Baek Lee, Seung-Nam Cha, Young-Jun Park, Zhong Lin Wang. Владелец: Georgia Tech Research Corp, SAMSUNG ELECTRONICS CO LTD. Дата публикации: 11-04-2013.
A light position controlling apparatus and a method of manufacturing the same. The light position controlling apparatus includes a substrate; first and second electrodes that are arranged on the substrate and configured to generate an electric field; and a piezoelectric nano wire configured to operate as optical waveguide. The piezoelectric nano wire includes a first portion disposed on the substrate, and a second portion that extends from the first portion and bends according to the electric field generated by the first and second electrodes to change a travel direction of light transmitted by the piezoelectric nano wire.

Method for producing piezoelectric thin-film element, piezoelectric thin-film element, and member for piezoelectric thin-film element

Номер патента: US20130127293A1. Автор: Kansho YAMAMOTO, Shinsuke Ikeuchi. Владелец: Murata Manufacturing Co Ltd. Дата публикации: 23-05-2013.
Provided is a method for producing a piezoelectric thin-film element including a piezoelectric thin-film layer having good surface morphology and high crystallinity. The method includes forming a lower electrode layer on a substrate; forming a piezoelectric thin-film buffer layer on the lower electrode layer at a relatively low film-formation temperature; forming a piezoelectric thin-film layer on the piezoelectric thin-film buffer layer at a film-formation temperature that is higher than the film-formation temperature for the piezoelectric thin-film buffer layer; and forming an upper electrode layer on the piezoelectric thin-film layer.

Backside integration of rf filters for rf front end modules and design structure

Номер патента: US20130187246A1. Автор: Anthony K. Stamper, James W. Adkisson, Jeffrey P. Gambino, Mark D. Jaffe, Panglijen Candra, Randy L. Wolf, Thomas J. DUNBAR. Владелец: International Business Machines Corp. Дата публикации: 25-07-2013.
A design structure for an integrated radio frequency (RF) filter on a backside of a semiconductor substrate includes: a device on a first side of a substrate; a radio frequency (RF) filter on a backside of the substrate; and at least one substrate conductor extending from the front side of the substrate to the backside of the substrate and electrically coupling the RF filter to the device.

Piezoelectric element and piezoelectric device

Номер патента: US20130187516A1. Автор: Akira Nomoto, Fumimasa Horikiri, Kazufumi Suenaga, Kazutoshi Watanabe, Kenji Shibata. Владелец: Hitachi Cable Ltd. Дата публикации: 25-07-2013.
A piezoelectric element includes a substrate, and at least a lower electrode layer, a piezoelectric film represented by a general formula of (Na x K y Li z )NbO 3 (0≦x≦1, 0≦y≦1, 0≦z≦0.2, x+y+z=1); and an upper electrode layer successively formed on the substrate. The piezoelectric film has a crystal structure of pseudo-cubic crystal, tetragonal crystal, orthorhombic crystal, monoclinic crystal or rhombohedral crystal, or has a state that at least two of the crystal structures coexist. The piezoelectric film is preferentially oriented to certain specific axes that are not more than two axes of crystal axes in the crystal structures. At least one of domain crystal component of a c-axis orientation domain crystal component and an a-axis orientation domain crystal component exists as the components of the crystal axes oriented.

Liquid ejection head and liquid ejection apparatus

Номер патента: US20130194353A1. Автор: Chikara Kojima, Eiju Hirai, Hiroshi Ito, Jiro Kato, Koji Sumi, Motoki Takabe, Shiro Yazaki, Takahiro Kamijo, Tatsuro Torimoto, Toshihiro Shimizu. Владелец: Seiko Epson Corp. Дата публикации: 01-08-2013.
A liquid ejection head includes a substrate in which a pressure generating chamber that communicates with a nozzle opening is formed; and a piezoelectric element having a piezoelectric layer, a first electrode that is formed on a surface of the piezoelectric layer on a side of the substrate so as to correspond to the pressure generating chamber, and a second electrode that is formed on a surface of the piezoelectric layer opposite to the side on which the first electrode is formed so as to extend over a plurality of the pressure generating chambers, wherein the second electrode is formed to extend to an outside of the pressure generating chamber in a longitudinal direction of the pressure generating chamber.