By ion irradiation of the coat one of the trampling trampling method and device

Technical Field

The present invention relates to ion irradiation of the coat one of the film removing method and film removing device.

Background Art

As can be to polycrystalline diamond (Poly - Crystalline Diamond, the following, sometimes "PCD") such inorganic coated cutting tool, trampling mechanical parts and the like, to utilize the emergency of the establishment of the technical problem is.

To this end, in order to by the tool steel, hard alloy to form a drill bit, for example a description of vertical milling cutter. The items in these tools tool steel, hard alloy, by the TiN, TiAlN, DLC, PCD has been coated.

With the use of the cutting tool, these coating wear, peel-off, the service life of the cutting tool to. In the past, these used tool is discarded, it is expected that by carrying out a film removing, after the film forming, repeatedly so to re-use. For high efficiency, trampling on surface, and not to damage the substrate.

As such film-removing method of the related proposal, has been the irradiation in a vacuum plasma or ion method practical (reference such as the generic documents 1, 2).

However, here, the former use of plasma irradiation method since the plasma in the front surface of the substrate is referred to as a sheath formed of (Sheath), ion collision lost space electric layer, in addition to the role of the hinder the film formed barrier, therefore in addition to the film efficiency is poor (reference generic literature 3).

In addition, the latter ion irradiation method can not be fully except the membrane, or, to the substrate sputtering, in re-deposition on the residual film, sometimes producing thin film residue.

In addition, sometimes also use heated to a high temperature of the chemicals such as TiAlN film has the trampling of the cutter, however, the use of the chemicals the burden to the environment caused by this problem.

The prior technical literature

Generic literature

Generic literature 1: new Meiwa industrial Corporation produces machine system divisions PB plan, 2014 years 10 months, contents "' 14.10 K - 0501"

Generic literature 2: KENSUKE UEMURA, "DEVELOPMENT AND INVESTIGATION OF BEAM AND PLASMAMETHODS FOR IMPROVING THE PERFORMANCE PROPERTIES OF THE PRODUCTS MADE OF METAL MATERIALS (for improving metal material product performance characteristics of the light beam and plasma method development and investigation)", Tomsk Polytechnic University (tomsk Polytechnic University), 2011 years, P 77 - 83

Generic literature 3: sailor Hiroyuki editor, "ion engineering manual", Corporation ion engineering Institute, 30 October 2004, P 55

Content of the invention

Problem to be solved by the invention

The application the inventor after careful study, found: in the latter in the illuminate ion method, when ion irradiation is not uniform and the part of the ion irradiation is insufficient (the following, known as the "dead angle") when, will produce the thin film residue.

In addition, it was also found that: by the hard alloy of the trampling cutters and the like under high-temperature environment of the case where, for example, through heating, by using the substrate with a film of the PCD to trampling the thermal expansion difference, or, by using microwave plasma passes through the high temperature conditions to burn under the condition that the film removing, hard alloy of sometimes resulting in typical η phase (for example W₃ Co₃ C, W₂ Co₄ C and the like) of the brittle phase.

As such, in order to like PCD by such inorganic coated cutting tool, mechanical parts and the like to be able to reuse trampling, its technical problems as follows: when the trampling ion irradiation is not dead angle of the substrate, the substrate (metal member) will not produce the brittle phases of processing under the environmental temperature, and, economic and trampling rapidly.

The purpose of this invention is to solve the problem of the as. Namely, the present invention provides a device for PCD as like inorganic coated cutting tool, mechanical parts and the like to be able to reuse trampling film-removing method and film removing device, ion irradiation when the substrate is trampling (gable) difficult to produce the dead angle, can be in the base material (metal member) will not produce the brittle phases of processing under the environmental temperature, and, can be economic to trampling and quickly.

For the solution to the problem

The application the inventor after careful study, found: in the stated irradiation ion in the method, when a bias is applied to the substrate, the ion current is changed, the occurrence of non-uniform ion irradiation, ion irradiation insufficient part generated (the following, also known as the "dead angle"), therefore producing thin film residue.

And, it was also found that: when the will be in addition to the membrane component (gable) such as SRAM ion irradiating device of the center part of the vacuum chamber, from the peripheral portion of the use of more than two ion ejection gun make ion stream in the central portion are overlapped, the diameter of the flow cross section of the diameter of the ion following, accordingly small, however, in placing the is in addition to the membrane component (gable) of the central part of the vacuum chamber can be realized on the ion irradiation, in addition, is in addition to the membrane component (gable) to earth ground, for example under the condition of applying forced bias (bias voltage U_Bias =± 0 V), the ion current will not swerve, difficult to produce the dead angle. Further, it has also been discovered: ion irradiation can be at a relatively low temperature, therefore, under the condition of hard alloy will not produce the typical η phase of the brittle phase.

Specifically, the application the inventor will be in addition to the membrane component (gable) is set to the ground (preferably not the other applied forced bias to ion irradiation), make ion stream will not be affected by the bias of the biased, dead corners are reduced occurred. And, the ion irradiation temperature is low-temperature (for example about 200 °C following) under the condition of, avoids the generation of brittle phases. In further preferred conditions if under, can inhibit the increase of the roughness of the surface of the substrate, the surface roughness of the substrate can more easily control the regeneration film is within the range of form. And, the thickness of the film layer 10 μm in addition to the left and the right of the film in a short time (for example 6 hours) can be realized in, also can maintain the economic speed.

The present inventors in order to solve the problem of serious studies, have completed the following of the invention.

The present invention is the following programme (1) - (7).

(1) A film removing method, which is the metal component to the surface of a coating film by inorganic matter into the covering member of the irradiation of the ion current, from the metal member that is stripping the coating film-removing method, characterized in that

The coated member is arranged one of two or more of the ion current of the ion current on the overlapping part, so that the covering member to the earth ground, to the covering member to illuminate the states the ion stream.

(2) According to said (1) the film-removing method, characterized in that

The film removing method comprises the article 1 process and 2 process,

In the article 1 in the process, so that the containing 67% more than the volume of the oxygen gas plasma, generating gas ion, will be to the gas of the ion current to the coated element shines to trampling,

In the section 2 in the process, containing 80% more than the volume of the argon gas plasma, generating gas ion, will be to the gas of the ion current to the coated element shines to trampling,

In the paragraph 1 after the step of executing the rule 2 process.

(3) According to said (2) the film-removing method, the film removing method only by the article 1 process and the article 2 process to form, as the final process through the implementation of the rule 2 process to finish the coated member being sprayed.

(4) According to said (2) or (3) the film-removing method, the gas comprises from by argon, CF₄ , SF₆ , CCl₄And CCl₂ F₂ In the group formed of at least one of the elected.

(5) According to the (2) - (4) in any one of film-removing method, the gas comprising CF₄ , CF₄ Rate of (volume %) CF₄ The content of (volume %) (volume %) and total proportion of ((CF4 containing rate/(CF4 content of + oxygen content)) × 100) is 5% the following.

(6) A film removing device, which is in the metal member to the surface of a coating film by inorganic matter formed by the irradiation of the ion current of the covering member, the metal member from the stripping a portion of the film-removing device, characterized in that

The film removing device for the covering member to form the earth ground,

The film removing device has more than two ion gun, these ion gun to be able to form the ion flow concentrated portion and configuration,

The film removing device is capable of the coating member is disposed in the ion flow , the film removing device can carry out the stated (1) - (5) in any one of film-removing method.

(7) According to said (6) the film-removing device, characterized in that

The film removing device has to make the configuration in the ion flow of the coated member relative to the ion flow rotation and/or revolution of the function.

The effect of this invention

The present invention, can provide a is to by the PCD as like inorganic coated cutting tool, mechanical parts and the like to be able to reuse trampling film-removing method and film removing device, ion irradiation when the substrate is trampling (gable) difficult to produce the dead angle, can be in the base material (metal member) will not produce the brittle phases of processing under the environmental temperature, and, can be economic to trampling and quickly.

As described above, in the present invention, in addition to not being applied to the membrane component (gable) forced bias. Specifically, in addition to the membrane component is not to (gable) imposes such as positive, negative, or form the rectangular wave, the bias voltage of the sine curve.

In addition, the is in addition to the membrane component (gable) to earth ground, usually, can cite the following method: the periphery of the covering member of the bracket directly to the earth ground, or, with the chamber on the bracket, to make the chamber to earth ground. Therefore, the invention is not in the bracket with the other he component insulation under a state of the processing, the so-called floating method (Japanese: ーー テ ィ ン グ law).

Description of drawings

Figure 1 is the diagrammatic cutaway view of said optimal example of device of this invention.

Figure 2 is on the ion flow direction and the front face of the dead angle of the simulation result.

Figure 3 is the enlarged view of experimental example 1 - 7 used in the double-blade drill bit piece.

Figure 4 is the cutaway view ( of by inductive coupling plasma (Inductively Coupled Plasma, the following, also sometimes jan jizuo "ICP") to trampling of the PCD optimal example coated double-edge of the drill bit).

Figure 5 is the outline diagram of ICP device over-looking cutaway view and that the configuration of the cutting tool.

Figure 6 is the scanning electron microscope (SEM) picture of the PCD to the film after film removing sheet.

Figure 7 is the cutaway view ( of by the hollow cathode (Hollow Cathode) type plasma device (the following, also referred to as "HC device") to trampling of the PCD optimal example coated double-edge of the drill bit).

Figure 8 is the diagrammatic plan of said HC device over-looking cutaway view and tool configuration.

Figure 9 is the scanning electron microscope (SEM) picture of the PCD to the film after film removing sheet.

Figure 10 is the cutaway view ( of forced applied bias voltage to carry out the ion irradiation under the situation of PCD coated double-blade drill bit).

Figure 11 is the diagrammatic plan of said forced exert the bias voltage to the ion-the lower end of the cutaway view of the device looking down and tool (double-blade drill bit) configuration.

Figure 12 is the scanning electron microscope (SEM) picture of forced applied to the bias voltage on the ion irradiation PCD film under the condition of being sprayed, the cutting tool (double-blade drill bit) sheet.

Figure 13 is the cutaway view ( of not exert the bias voltage and to earth ground to carry out the ion irradiation under the situation of PCD coated double-blade drill bit).

Figure 14 is the outline diagram of said not exert the bias voltage and the ion current to earth ground in ion concentration part and the lower end of the cutaway view of the device looking down and tool configuration.

Figure 15 is the scanning electron microscope (SEM) picture of not exert the bias voltage and to earth ground in the ion concentration position carried out under the conditions of the ion, the cutting tool (double-blade drill bit) sheet.

Figure 16 is the scanning electron microscope (SEM) picture of not exert the bias voltage and to earth ground in centralized position ion ion under the conditions of, another tool (double-blade drill bit) sheet.

Figure 17 is the scanning electron microscope (SEM) picture of not exert the bias voltage and to earth ground in the ion concentration position carried out under the conditions of the ion, but also a tool (double-blade drill bit) sheet.

Figure 18 is not expressed in the applied bias voltage and to earth ground in centralized position ion ion under the conditions in the gas and is CF₄ Happens to the concentration of the change of the etching speed of the PCD and the substrate (Etching rate) of the chart.

Mode of execution

A description of the present invention.

The present invention is to in the metal member that is attached to the surface of the film by the inorganic matter into the covering member of the irradiation of the ion current, from the metal member that is stripping the coating film-removing method, characterized in that the coated member is arranged one of two or more of the ion current of the ion current on the overlapping part, so that the covering member to the earth ground, to the covering member to illuminate the states the ion stream.

The following, this will also be film-removing method is called a "method of the present invention".

In addition, the invention also relates to the metal member attached to the surface of the film by the inorganic matter into the covering member of the irradiation of the ion current, from the metal member that is stripping the coating film-removing device,

The film removing device for the covering member to form the earth ground, the film removing device has more than two ion gun, these ion gun to be able to form the ion flow concentrated portion and configuration, the film removing device is capable of the coating member is disposed on the states the ion stream, the film removing device can carry out the method of the invention.

The following, this will also be film-removing device called "the device of the invention".

The following, are recorded as "the invention" only under the condition of the, method of the present invention is means and the device of this invention the two.

In the present invention, the metal component to the surface of a coating film by inorganic matter into the covering member of the irradiation of the ion current, from the metal component stripping the film.

In the present invention, the covering member is, as parent to metal member, in its surface has inorganic matter of the film.

The material of the metal member that is not particularly limited, for example, to see a listing of tapping, hard alloy.

As long as the inorganic film is also not particularly limited, for example, can be cited a TiN, TiAlN, DLC, PCD.

Specifically, by the PCD as like inorganic coated cutting tool, mechanical parts in accord with the covering member. More specifically, by the tool steel, hard alloy forming the drill bit, vertical milling cutter in accord with the covering member.

In the present invention, such coating member to illuminate the ion flow, from the metal member that is stripping the film. In the past, coating or film forming failure to the service life of the cutting tool is discarded, however, by carrying out a film removing, after the film forming, can be reused.

Then, using Figure 1 for a description of the device of the present invention. The use of the device of this invention as to the coating element shines ion flow, from the metal member that is capable of peeling the film.

Figure 1 is the diagrammatic cutaway view of said optimal example of device of this invention.

In fig. 1 in, the device of this invention 2 with vacuum chamber 4 and two ion gun 3, the vacuum in the vacuum chamber 4 in, in its central part is provided with a support 5.

And, configured from two ion gun sent by the ion flow 7 in the overlapping a center, forming the ion current 7 A. Can the covering member 1 is arranged in the vacuum chamber 4 is formed of the ion current 7 A are arranged at the central part of the 5.

Here, the bracket 5 to earth ground, therefore, the set covering member 1 to earth ground. The bracket 5 directly to the earth ground is the covering member 1 to earth ground, however, if the bracket 5 with the chamber 4 is turned on, to make the chamber 4 to the earth ground, likewise also can make the covering member 1 to earth ground.

The type of ground the ground 1st (10 Ω following).

In addition, form: can make the is disposed in the ion flow 7 A of the covering member 1 is fixed to the bracket 5 relatively to the flow state of 7 rotation. Here, the rotation means, such as the covering member 1 under the condition of the drill bit, in order to drill the length direction of the axis of the position thereof as a center rotation.

In addition, still possess the bracket 5 clockwise (Figure 1 in the direction of arrow) rotation (revolution) to make the coating piece 1 revolution of the function.

As shown in Figure 1, is fixed to the vacuum chamber 4 ion gun 3 so that the gas from the gas inlet into the gas plasma, generating gas ion, the ion current of the ion beam irradiation as 7.

For the ion beam generating device, market trafficking of various style, the device of this invention under the condition of not subject to special restrictions can be used, for example can use the CED type ion gun (Closed Electron Drift Ion Gun).

Here, gas from the gas inlet into the gas as long as it is able to produce on the covering member 1 on the surface of the coating film of the gas ion can be trampling. For example, the use of the inactive chemical species, from this point of view trampling high effect, the use of the rare gas, which is preferably atomic weight of inactive element argon, xenon, krypton and the like, more preferably using argon.

In addition, preferably the gas is also included in the oxygen-containing gas. As the oxygen-containing gas, air by can be cited.

-use maps 1 of the instantiated as device of this invention using the method of the present invention to coat one of the trampling of the cases, the implementation of the preferred 1 process, performed after the article 2 process, in section 1 in the process, so that the containing 67% more than the volume of the oxygen gas plasma, generating gas ion, will be to the gas of the ion current to the coated element shines to trampling, in section 2 in the process, containing 80% more than the volume of the argon gas plasma, generating gas ion, will be to the gas of the ion current to the coated element shines to trampling.

In addition, the method of the invention preferably only by the article 1 process and 2 a process, as the final process through the implementation of the rule 2 process to finish the coated member being sprayed.

The following description is preferably comprising article 1 process and 2 process (preferably from section 1 process and 2 a process) of the reasons for the method of the invention.

Usually, molecules of gas in addition to the ion such as physical collision reaction other than oxidation can also trampling film, compared with the therefore and a rare gas, in addition to the film speed. However, in addition to the film in the final process, may cause oxidation of the substrate, namely the embrittled. In the case of the embrittlement caused, it is difficult to form membrane with bioactivity. Therefore, preferably, to a certain extent until the film removing oxygen and the like cause the chemical reaction of the gaseous species, in addition to the film is about to end of the case, in order to prevent substrate embrittlement of the use of the rare gas (argon). Here, preferably, oxygen and the like cause the chemical reaction of the gas kind carried out under the condition that the film removing, the residual thickness of the films is a minimum value of 1 μm (that is, the residual film of the most thin portion with a thickness 1 μm) of the cases, in order to prevent the substrate of the embrittled using rare gas (argon). Through such alteration of the gaseous species, in addition to the film speed can be improved, and the base material for preventing embrittlement.

In section 1 in the process, as described above, the use of containing 67% more than the volume of the oxygen gas, preferably gas oxygen concentration is 80% more than the volume of the, further preferably 90 volume % or more, more preferably 95% more than the volume of the, can also be 100% volume.

As the gas can be comprised of in the outside oxygen gas, can enumerate out from by argon, CF₄ , SF₆ , CCl₄ And CCl₂ F₂ In the group formed of at least one of the elected. Wherein preferably from CF by argon and₄ In the group formed of at least one of the elected, more preferably CF₄ .

Gas comprising is easy to generate stable plasma, therefore is preferably.

Preferably gas is in the argon content of 20 volume % the following, further preferably 10 volume % the following, more preferably 5 volume % the following, further preferably 3 volume % the following, further preferably 1 volume % the following.

The application the inventor finds that: in gas under the condition that only by the oxygen constitution, according to the different kinds of the cutting tool, the presence of oxygen ions to the substrate sputtering, in even the residual film formed on the substrate by the with the same material of the thin film. And, the result of further research and development, found: gas comprising CF₄ When, not easy to this phenomenon.

Preferably gas in the CF₄ For the content of 33% volume following, further preferably 20 volume % the following, more preferably 10 volume % the following, further preferably 5 volume % the following, further preferably 3 volume % the following, further preferably 1 volume % the following.

In the section 2 in the process, as described, containing 80% more than the volume of the argon gas, preferably gas is in 90 volume % or more, more preferably 95% more than the volume of the, further preferably 100 volume %.

In continuous paragraph 1 process and 2 under the condition of the process, gas from the gas inlet into the gas species from the gas is changed to the gas. Here, just after the change of the short period of time (e.g. a few minutes) in, become the gas and gas mixed situation, this will not have the role of the membrane caused by the impact of not good. In addition, even though such situation is regarded as the equivalent of only in paragraph 1 process and 2 process. That is, regarded as the equivalent of only by the article 1 process and 2 the process of the method of the invention.

With the vacuum chamber 4 of the gas of the vacuum pressure is preferably 0.01 Pa - 1.0 Pa, more preferably 0.05 Pa - 0.5 Pa.

Ion irradiation conditions (in addition to the film processing conditions) according to the gas type, the type of device different, ionization voltage is preferably 2 kv - 4 kv, processing time is preferably 5 minutes -6 hours. The use of CED-type ion gun under the situation of ionization current is preferably 0.1 A - 1 A the left and the right.

In addition, preferably the ion irradiation temperature is about 200 °C carried out under the following conditions.

Here, the covering member 1 to earth ground, further preferably not applied forced bias. In this case, the ion current will not be affected by the bias of the biased, so successful reduction of a dead angle is avoided.

As described above, the device of this invention has two ion gun, to explain the reasons. Figure 2 is the diagram of the ion gun to one of the two ion gun and under the conditions of irradiation with the coating piece ion whether the whole surface of the collision simulations have been performed.

Specific description of the.

Figure 2 is the diagram of the latter experimental example 1 - experimental example 7 used in the trafficking of the market the cross section of the double-edged drill bit simulations have been performed, the line integral is calculated by irradiation to the drill ion of the recess surface of the degree of collision. Here J₀ Is the ion current density (mA/cm² ) Mean.

As shown in Figure 2, the ion gun is a under the situation of the score line product for 0.6306 J₀ , The ion gun is two under the situation of the score line product for 1.4718 J₀ , Is a relatively large value.

Therefore, the presumption: ion gun is one of the circumstances, may form the illumination to ion not fully reach the position, i.e., may form the dead angle, as a result, ion irradiation may see that the film residue.

Therefore, the device of the invention preferably has two or more ion gun.

The use of such the device of this invention, can preferably the implementation of the method of the present invention.

The adoption of the invention to the covering member is processed, will not produce the brittle phases, the roughness of the surface can be maintained to be able to re-forming of the roughness, the thickness of the film layer 10 μm in addition to the left and the right of the film can be in short time (for example 6 hours) complete, economic speed can also be maintained.

Embodiment

The following, has shown the seven experiment which is now specific description of the present invention.

(Experimental example 1)

The use of market trafficking of inductance coupling type plasma apparatus (ICP), market trafficking of the double-edged drill bit trampling. Here, the double-edged drill bit is coated with 10 μm of the thickness of the hard alloy systems of the PCD of the drill bit, the nominal diameter is 10 mm. Figure 3 pictures show the examples of the double-edge of the drill bit.

Figure 4 said ICP being implemented by trampling processing (plasma processing) of the double-blade drill bit 10 of the cutaway view (compend Figure). In addition, Figure 5 that the ICP device and double-blade drill bit overlook section 10 configuration.

In addition to the film processing conditions such as article 1 as shown.

[Table 1]

Wherein in addition to the film processing, so that the double-blade drill bit 10 clockwise (Figure 4 in the direction of arrow) rotation. In addition, except for the film processing, as shown in Figure 5, the provided with a plurality of double-blade drill bit 10 of the bracket 15 clockwise (Figure 5 in the direction of arrow) rotation, so that the double-blade drill bit 10 revolution.

In fig. 5 in, dashed-line the interior of the region 17 that the concentrated part of the ICP.

Through such a double-blade drill bit to 10 being sprayed, but as shown in Figure 4, in double-blade drill bit 10 by the surface of the plasma is formed in a thickness 0.1 mm of the sheath.

And, in addition to the film after the treatment, the use of scanning electron microscope (SEM) to double-blade drill bit 10 of the surface were observed. Figure 6 of the (a) expressed in order to 1,500 times as SEM observation, Figure 6 of (b) expressed in order to 15,000 times as SEM observation.

Although realizes the 10 μm thick of trampling of the PCD, however, as shown in Figure 6 of (b) is shown, damage to the substrate, to form a carbon film (the whole package). Therefore, it is difficult to form again a film.

(Experimental example 2)

The use of market trafficking of HC-type plasma device (new Meiwa industrial Corporation systems, HC-type plasma device: IE - 400), with which the experimental example 1 the same double-blade drill bit 10 has been trampling.

Figure 7 show by HC-type plasma device is the implementation of the film removing processing (plasma processing) of the double-blade drill bit 10 of the cutaway view (compend Figure). In addition, Figure 8 that the HC-type plasma device device overlook section and double-blade drill bit 10 configuration.

In addition to the film processing conditions such as article 2 as shown.

[Table 2]

Wherein in addition to the film processing, so that the double-blade drill bit 10 clockwise (Figure 7 in the direction of arrow) rotation. In addition, except for the film processing, as shown in Figure 8, the provided with a plurality of double-blade drill bit 10 of the bracket 15 clockwise (Figure 8 in the direction of arrow) rotation, so that the double-blade drill bit 10 revolution.

In fig. 8 in, dashed-line internal regional 17 said hollow cathode plasma concentration of part.

Through such a double-blade drill bit to 10 being sprayed, but as shown in Figure 7, in double-blade drill bit 10 by the surface of the plasma is formed in a thickness 5 mm - 30 mm of the sheath. In addition, as shown in Figure 7, is formed with a hollow cathode plasma not fully reach the position (blind zone (Shadow zone)), the following phenomenon found: to carry on the substrate sputtering, is sputtering of the substrate component of the base material (Figure 7 in marked as re-deposition (re - deposition)).

And, in addition to the film after the treatment, the use of scanning electron microscope (SEM) to the surface of the double-edged drill bit observed. Figure 9 of (a) said to 25 times as SEM observation, Figure 9 of (b) expressed in order to 2,000 times as SEM observation.

As shown in Figure 9, detected by the PCD of the film residue. Therefore, not the mechanical removal of these residues, then it will be difficult to form into a film.

In addition, HC device because of its structure heating relatively large, also has not using the water cooling structure or heat-resistant material difficult to be able to stand for a long time such a shortcoming of the operation.

(Experimental example 3)

The use of ion irradiation device, to exert the bias voltage with the experimental example 1 the same double-blade drill bit 10 has been trampling.

Figure 10 expressed by ion irradiation device being implemented processing of trampling the double-edged drill bit 10 of the cutaway view (compend Figure). In addition, Figure 11 said ion irradiating device of the device over-looking section and double-blade drill bit 10 configuration.

Figure 11 indicated by the ion irradiating device 11 with vacuum chamber 14 and four ion gun 13, the vacuum in the vacuum chamber 14 is arranged in the cathode is connected with the bracket 15. And, the bracket 15 is arranged on the multi-double-blade drill bit 10. In addition, as shown in Figure 11, four ion gun 13 to the ion gun 13 two mode of opposite configuration. And, the ion gun 13 so that the gas from the gas inlet into the gas (argon + oxygen) plasma, generating gas ion, the ion current of the ion beam irradiation as 17.

As such ion beam generating device, the use of the market trafficking CED type ion gun (Closed Electron Drift Ion Gun).

In addition to the film processing conditions such as article 3 as shown. The bracket 15 is connected with the negative pole, is applied to the bias voltage.

[Table 3]

Wherein in addition to the film processing, so that the double-blade drill bit 10 clockwise (Figure 10 in the direction of arrow) rotation. In addition, except for the film processing, as shown in Figure 11, the provided with a plurality of double-blade drill bit 10 of the bracket 15 clockwise (Figure 11 in the direction of arrow) rotation, so that the double-blade drill bit 10 revolution.

In fig. 11 in, two ion current 17 overlap the central area of said irradiation part of ion concentration (ion current 17 A).

Through such a double-blade drill bit to 10 being sprayed, but as shown in Figure 10, is formed with irradiation to ion not fully reach the position (blind).

And, in addition to the film after the treatment, the use of scanning electron microscope (SEM) to the surface of the double-edged drill bit observed. Figure 12 of (a) to said 35 times as SEM observation, Figure 12 of (b) expressed in order to 1,000 times as SEM observation.

As shown in Figure 12, detect the PCD of the film residue. Therefore, not the mechanical removal of these residues, then it will be difficult to form into a film.

(Experimental example 4)

The use of ion irradiation device, the bias voltage is not applied to the experiment example 1 the same double-blade drill bit 10 has been trampling.

Figure 13 indicated that he did not exert the bias voltage and to ground to earth by ion irradiation device being implemented processing of trampling double-edged drill bit 10 of the cutaway view (compend Figure). In addition, Figure 14 expressed ion irradiating device of the device over-looking section and double-blade drill bit 10 configuration.

Figure 14 indicated by the ion irradiating device 12 with the experimental example 3 used in the ion irradiating device 11 similarly, with vacuum chamber 14 and four ion gun 13, the vacuum in the vacuum chamber 14 is arranged in the ground to the earth bracket 15. And, in the irradiation of the ion concentration of the central portion (ion current 17 A), provided with a plurality of double-blade drill bit 10 of the bracket 15 ground.

In addition, as shown in Figure 14, four ion gun 13 to the ion gun 13 two mode of opposite configuration. And, the ion gun 13 so that the gas from the gas inlet into the gas plasma, generating gas ion, the ion current of the ion beam irradiation as 17.

Here, first of all, gas from the gas inlet as the gas only introduced into oxygen. The oxygen is filled with the vacuum chamber of the vacuum pressure is 0.1 Pa - 0.35 Pa. And, ionization current is 0.1 mA, ionization voltage is 1 kv, oxygen plasma to generate oxygen ion, the ion current of the ion beam irradiation as.

After, in the residual thickness of the films is a minimum value of 1 μm when (namely, the residual film of the thinnest part of the thickness of the 1 μm when), introduction of stop oxygen, gas from the gas inlet as the gas introduced into argon. Argon filled with the vacuum chamber of the vacuum pressure is 0.1 Pa - 0.35 Pa. And, ionization current is 0.1 mA, ionization voltage is 1 kv, causes the argon plasma to generate the argon ion, the ion current of the ion beam irradiation as.

In addition to the film processing conditions such as section 4 as shown.

[Table 4]

Wherein in addition to the film processing, so that the double-blade drill bit 10 clockwise (Figure 13 in the direction of arrow) rotation (rotation). In addition, except for the film processing, as shown in Figure 14, the provided with a plurality of double-blade drill bit 10 of the bracket 15 clockwise (Figure 14 in the direction of arrow) rotation, so that the double-blade drill bit 10 revolution.

In fig. 14 in, two ion current 17 overlap the central area of said irradiation part of ion concentration (ion current 17 A).

Through such a double-blade drill bit to 10 film-removing, not the ion current biased, is not formed in the experimental example 2, 3 as observed in the, of the irradiation position of the ion current not fully reach (blind).

And, in addition to the film after the treatment, the use of scanning electron microscope (SEM) to the surface of the double-edged drill bit observed. Figure 15 of (a) said to 25 times as SEM observation, Figure 15 of (b) expressed in order to 2,000 times as SEM observation.

As shown in Figure 15, realizes the 10 μm thick of trampling of the PCD. And, the surface of the substrate have not been damaged. Therefore, again a film can be formed.

(Experimental example 5)

With the use in the experimental example 4 used in the device of the same ion irradiating device, to carry out the same experiment. However, the as the gas as the gas of of the argon plasma ionization current is the pendant 120 mA, ionization voltage is 4 kv.

And, in addition to the film after the treatment, the use of scanning electron microscope (SEM) to the front face of the double-edged drill bit observed. Rake face usually also referred to as dead angle department, part of it is difficult to trampling. Figure 16 of (a) said to 600 times as SEM observation, Figure 16 of (b) expressed in order to 3,000 times as SEM observation.

Figure 16 can be known, while the PCD can be coated substantially stripping, however, once in the PCD is stripped of a portion of the deposition on again. In the occurrence of such phenomena, it is difficult to further trampling.

(Experimental example 6)

Use of experimental example 4, experimental example 5 used in the device of the same ion irradiating device, to carry out the same experiment. However, gas not only is oxygen, which contains 95 volume % oxygen, 5% of the volume of the CF₄ Of the gas. And, the gas (oxygen + CF₄ ) And as a gas of the argon plasma ionization current is the pendant 120 mA, ionization voltage is 4 kv.

And, in addition to the film after the treatment, the use of scanning electron microscope (SEM) to the front face of the double-edged drill bit observed. Rake face usually also referred to as dead angle department, part of it is difficult to trampling. Figure 17 of (a) said to 600 times as SEM observation, Figure 17 of (b) expressed in order to 3,000 times as SEM observation.

Figure 17 can know, PCD film is peeled off, and the like have not been observed in experimental example 5 obtained Figure 16 observed in, stripping of the phenomenon of deposition of PCD once again. Therefore, it can be considered that good trampling have been conducted.

(Experimental example 7)

In the experimental example 6 in, gas of the CF₄ Content is 5 volume %, the change in the ratio of cases, a plurality of experiments were carried out. And, finding the ratio of the etching speed with the PCD (Etching rate) and substrate of the etching speed of the relationship between the (Etching rate).

Other film-removing conditions with the experimental example 6 the same.

The results as shown in Figure 18.

As shown in Figure 18, as CF₄ Increase, PCD except the film speed is reduced, but substrate (in fig. 18 are recorded as in the WC - Co) etching speed-increasing. If the degree of etching of the substrate too serious, in addition to the difficult after film processing is carried out. Thus, according to fig. 18 can judge CF₄ Rate of (volume %) CF₄ The content of (volume %) (volume %) and total proportion (in fig. 18 are recorded as CF4 in: O₂ Ratio) in 5% the following more properly.

The Figure mark note

1. The covering member; 2, the device of this invention; 3, ion gun; 4, the vacuum chamber; 5, bracket; 7, the ion current; 10, double-blade drill bit; 11, ion irradiating device; 12, ion irradiating device; 13, ion gun; 14, the vacuum chamber; 15, bracket; 17, ion current; 17 A, ion current .