FERROELECTRIC THIN FILM FORMATION COMPOSITION, FERROELECTRIC THIN FILM AND METHOD OF FABRICATING FERROELECTRIC THIN FILM

Figure 1 ferroelectric thickness of thin film and is represents a degree behavior of fluctuation rate.

Figure 2 shows a is perspective view of ink jet type recording head also.

Figure 3 shows a plane view of ink jet type recording head also is and cross section.

And a process for manufacturing the ink jet type recording head also Figure 4 shows a the cross representing..

And a process for manufacturing the ink jet type recording head also Figure 5 shows a the cross representing..

<Description of the sign for major part of the drawings >

10: flow passage forming substrate 12: having a center bore pressure

20: nozzle plate 21: nozzle opening

30: sealing board 31: piezoelectric element holding section

32: reservoir part 40: compliance substrate

60: charged the pole just 70: ferroelectric thin film

75: ferroelectric formed film can 80 : the pole just phase

85:90 formed film can the upper electrode is disposed: lead electrodes

95:100 formed film can lead electrodes: reservoir

300: piezoelectric element

Said a required portion out of a calculation of the present invention number 1 a, a the material for forming the ferroelectric thin film metal compound as on the ferroelectric thin-film composition for forming, which react with hydroxyl groups and having a reactive group except reactive groups said end portion at least of 2VM or the hydrophobic hydrophobicity to compounds characterized by ferroelectric thin film-forming composition.

Such sol compositions in number 1 hydrophobic hydroxyl groups contained in the reaction and that bind non-chemical group and by the formation of a hydrophobic colloid, [...] prevented effectively can be. In addition compounds that have a hydroxy group can be used positively the material. to be able to expand the selective composition.

In a of the present invention number 2 number 1, said reaction group and carboxyl, halogenated silane, hydroxy it will be sour, column crossroad and alkoxy silane selected from the group consisting of is characterized by at least 1 species ferroelectric thin film-forming composition.

Such predetermined in number 2 a hydrophobic with reactive groups containing a ferroelectric thin film from the forming compositions [...] prevented effectively by can be.

In a number 1 or 2 of the present invention number 3, said metal compound a hydrolysis inhibitor capable of inhibiting the hydrolysis of number as characterized by: the casein solution contains an d ethanol amine ferroelectric thin film-forming composition.

Hydrolyzing metallic compound film, i.e., tungsten in such number 3 to effectively prevent can be.

Either types of number 1 ∼ 3 a of the present invention number 4 in one form, said stabilization of metal compound stabilizer polyethylene glycol characterized by line will be ferroelectric thin film-forming composition.

Also provided a method of fabricating ferroelectric thin film in such number 4, i.e. crack process using a to effectively prevent the formation of can be.

Either types of number 1 ∼ 4 a of the present invention number 5 in one form, a detergent for lysing the metal compound as a solvent said 2-butoxyethanol characterized by: the casein solution contains an ferroelectric thin film-forming composition.

In such relatively metal compound number 5 can be readily absorbed.

Either form of the present invention number 6 a number 1 ∼ 5 types of composition for a ferroelectric thin film of belt as a matter of water on by and calcining and then is dried, to form a ferroelectric thin film manufacturing method of ferroelectric thin film is characterized by.

Number 6 in such effective [...] by sol-gel process from at can be prevented the flat a ferroelectric thin film can be comparatively easily.

Manufacturing method a of the present invention number 7 in the form of number 6 for on characterized by. ferroelectric thin film is made of.

Number 7 in such effective [...] by sol-gel process from at can be prevented the flat a ferroelectric thin film in addition comparatively easily can be enable to surely realize a.

The present invention refers to such a composition for forming ferroelectric thin film composition are considered occurrence cause creation of a striation to vapor is chemically reacted hydroxyl groups forming a hydrophobic colloid by containing red hydrophobic compounds as suppressed [...] , the moisture amount of the it has been deposited by either adding silicon or limit the totally different from that for a the prior art..

Hereinafter in embodiment of the present invention rapidly and to reduce a memory based on form..

The present invention according to ferroelectric thin film-forming compositions include a ferroelectric; and a composition for forming a film of, ferroelectric thin film of material such as seed a metal alkoxide the metal compounds and the metal compound is dissolved a solvent and other additive components, a basic composition containing.

Wherein, determination of ceramic piezoelectric ferroelectric thin film comprises ferroelectric thin film is provided e.g. as a the material for forming the, ferroelectric such as lead zirconate titanate (PZT) piezoelectric materials or this niobium, nickel, magnesium, bi or ytterbium (ytterbium) metals of a is is used as the ferroelectric the reel lac it stands added. Characteristics of a piezoelectric element composition thereof, uses and the like by considering providing one but for example, PbTiO₃ (PT), PbZrO₃ (PZ), Pb (Zr_x Ti_1-x) O₃ (PZT), Pb (milligram_1/3 Nb_2/3) O₃-PbTiO₃ (PMN-PT), Pb (Zn_1/3 Nb_2/3) O₃-PbTiO₃ (PZN-PT), Pb (Ni_1/3 Nb_2/3) O₃-PbTiO₃ (PNN-PT), Pb (In_1/2 Nb_1/2) O₃-PbTiO₃ (PIN-PT), Pb (Sc_1/3 Ta_1/2) O₃ -PbTiO₃ (Pacific Standard Time-PT), Pb (Sc_1/3 Nb_1/2) O₃-PbTiO₃ (PSN-PT), BiScO₃-PbTiO₃ (BS-PT), BiYbO₃-PbTiO₃ (BY-PT) as to the aromatic hydrocarbon.

Ferroelectric thin film of the present invention a composition for as the additive but is not particularly limited in the method for example, sol-gel preferably, via employing a. This relatively a ferroelectric thin film at low cost, can be easily in addition is since.

Wherein, the material for forming the ferroelectric thin film metal compounds include employing film forming method having by providing one but for example, titanium, zirconium, lead, metal zinc [...] , propoxide, butoxide or [...] profile such as alkoxide or acetate compound as to the aromatic hydrocarbon.

On the other hand, is a metal, such as compound is dissolved a solvent e.g. as a, 2-butoxyethanol, : carbonic-propyl alcohol.

Furthermore, in the present invention a metal compound sol composition effects a hydrolysis inhibitor capable of inhibiting the hydrolysis of as number, monoethanolamine, diethanolamines, triethanolamin such as as an additive a no. may be. Furthermore, sol compositions of stabilizing such a metal compound, thus prevent the occurrence of cracks and per-acid and a stabilizer which as, ethylene glycol, polyethylene to a. may be no. While allowed to be in addition, no thickener such as an additive a to. may be.

And, those components-forming compositions include a ferroelectric thin film of the present invention, hydroxyl groups which react with having a reactive group thereof and except reactive groups hydrophobicity end portion at least of 2VM or the hydrophobic compound is formed inside the tie. added as essential ingredients; and a.

Such hydrophobic compounds include, for example, end of one chain molecules which react with hydroxyl groups and having a reactive group the other end portion to the typical is a compound having hydrophobicity, to react with hydroxy group and reaction when hydrophobicity outer surface of the hydrophobic compounds and with each other, , to form a hydrophobic colloid is surface. Furthermore, the moisture given off by the compositions sol column hydroxy wherein, it derived used to control application of multi-determined, of the alkoxide is made by hydrolyzing it, the above-mentioned further as additives derived from ethylene glycol, polyethylene or diethanolamines to fasten..

On the other hand, into reactive hydrophobic compounds for example, carboxyl, halogenated silane, hydroxy silane as to the aromatic hydrocarbon silane and alkoxyalkyl. Furthermore, halogenated the thread column crawl Si-X-if the (X exhibits the elemental halogen) which represented by, hydroxy the thread column crawl Si-OH-if the represented by, alkoxy the thread column it crawls -Si-OR (exhibits and of the alkyl R) represented by the recording operation.. Furthermore, the aforementioned reactive groups such as one might use is which chemically reacts hydroxyl groups that is for example, such as isocyanate is even.

Furthermore, hydrophobic compounds except reactive groups of of 2VM or indicating hydrophobic at least end to react with hydroxy group and the reaction that at least end portion and, preferably, hydrophobic that indicates that indicates the balance chain molecules preferably hydrophobic. For example, the balance except reactive groups to connect a straight or side chained hydrocarbon group or a hydrocarbon of molecular during or amino group is end exist, but include substances having, at least end alkyl, amino group is present is hydrophobic such as is.

Furthermore, in the present invention using hydrophobically molecular compounds having a siloxane bond in not thus is terminal belongs and requests a ring-silicon compound.

Ferroelectric of the present invention for thin film formation containing hydrophobic compounds kitchen work, and since the composition present in the coupling chemically reacted hydroxyl groups present in the compositions the composition in the transistor circuit, includes a hydroxy group movably set at the, ferroelectric thin film by using the photoresist pattern as an [...] on a table in a vacuum tub is think. I.e., the hydroxy group as an additive solvent or composition of the present invention is can be employed in or metal compounds containing a water determined as such can be employed in reaction hydrophobic derivative having a hydroxyl group at the since chemically reacted is reacted with the second reactive group on a table in a vacuum tub [...]. An editing unit switches the first, as composition, decisions are including compounds, by hydrolysis solvent having hydroxy groups such as seed an alkoxy compound, use can be made of, packaging cans and. I.e., ferroelectric for thin film formation in sol composition agent and preparation of compositions to be able to expand the wall of the rectangular..

Furthermore, the method involves formation of the ferroelectric thin film in the present invention high frequency induction heater and apparatus surface efficient to the reel lac it stands. I.e., the reel lac it stands adopts for example, PZT comparison with a metal alkoxide is an amount of a compound of the of metals, such as to a base station after converting a solvent having hydroxy groups and this causes an additive for example, provided as a functional stabilizer connections necessary hitherto hydrolysis at is necessary that. For example, PMN-PT, the Nb PZN-PT (metal alkoxide) that apply a only as far as the hydrolysis number to increase the concentration of additives such as because the increased to thereby cause derivative having a hydroxyl group at the lowered according to the lifting and lowering [...] is easily shifts from that of a. Even in such a case is, in the present invention by the above-mentioned hydrophobic compound [...] prevented effectively can be.

The, in hereinafter listed in the 1 in the embodiment 1 and comparison e.g. based on. rapidly and to reduce a memory further the present invention.

[In the embodiment 1]

2-butoxyethanol the main, as metal compound herein zirconium acetylacetonate (Zr (CH₃ COCHCOCH₃)₄), titanium [...] (Ti ((CH₃)₂ CHO)₄) by mixing the, 20 2000 minutes under room temperature. Furthermore, hydrolysis number as diethanolamines (HN (CH₂ CH₂ OH)₂) as hydrophobic compounds in addition adding an amino silane compound (NH₂ C₂ H₄ NHC₃ H₆ Si (OCH₃)₃) 20 additionally at room temperature is applied to 2000 minutes. Lead the acetic additional 3 hydrate (Pb (CH₃ COO)₂/3H₂ O) applying a 80 °C a heated to. Heating that in one state the 20 minutes until the room temperature after cooling it with the was composition contains a for forming a ferroelectric thin film of in the embodiment 1.

[Compared e.g. 1]

Amino silane compound in the embodiment 1 except without composition as well of 1 compares e.g. was composition contains a for forming a ferroelectric thin film of.

[Test example 1]

In the embodiment 1 a ferroelectric thin film of aminosilane to include-forming compositions (weight) for content rate of 10 weight % on a ferroelectric thin film of in addition in the embodiment 1 and comparison example 1 to include-forming compositions d ethanol amine 9.6 weight % on the validation term and to satisfy the needs, polyethylene glycol content change when ferroelectric thin film (PZT film) the creation of a striation (radial to which a stripe pattern) size of i.e., recess portion of the male (bone) and the thinning process (acid) respectively corresponding to one tooth each thickness PZT according to the measurement value of the average film thickness by computing the difference (%) PZT film thickness of fluctuation rate behavior of sensors. Result to the computer of the also exhibits to 1 (a). 1 (a) also in addition the polyethylene glycol content and ferroelectric thickness of thin film and is represents a degree a relationship with variation.

In addition here composition for ferroelectric thin film formed at a surface of a substrate in 1000 ∼ 3000 rpm on the surface of metal 10 ∼ 30 seconds the thickness 1.0 micro m of spin coating (spin-coating) are formed at the PZT film. And, in the embodiment 1 and comparison example 1 of PZT film for example, energy dispersible X ray (EDX) and fluorescence X ray the message requested by the element was conducting an assay. As a result, films and PZT of about 1.00 in the embodiment 1 of a ferroelectric thin film of PZT to includes-forming compositions in the embodiment 1 with an amino silane compound silicon considered to about 1.05 silicon is detected but, compared e.g. PZT 1 of silicon films and didn't detected. Therefrom, PZT film and of 1 in the embodiment 1 of PZT compared e.g. to contents-by means of an analysis of the classification of elements in the film is selected from the torsion bar is used for discriminating both with is not has also been found.

Furthermore, thickness of film PZT behavior of fluctuation rate which indicates to irradiated results as if the 1 (a), the comparison fluctuation rate thickness of film PZT 1 e.g. about content polyethylene glycol in is 4.7 weight % increases and more abruptly until slowly increasing even after the, polyethylene glycol content of about 7% to about 12 weight % reaching the it has also been found. Therefrom, the content of polyethylene glycol [...] easily shifts from that of a it has also been found that.

The controller chip, in the embodiment 1 is reacted with the second reactive group of an amino silane compound sol in particular hydroxyl groups present in the compositions, polyethylene glycol derivative having a hydroxyl group at the layer and chemically reacts with a hydroxylated present in the composition is reduced since a, polyethylene glycol content about 12 weight % PZT film thickness of fluctuation rate even when turned over about 3.5%, which can suppress an it has also been found that. I.e., 1 e.g. in the embodiment 1 includes a comparison composition of composition of PZT film thickness of fluctuation rate compared to about half, to reduce the hereinafter has also been found the torsion bar is used for. Therefrom, in the embodiment 1, such as amino silane compound containing a ferroelectric for thin film formation composition, even if the, the amount of the polyethylene glycol effectively preventing [...] it was found that it is possible for.

[Test example 2]

In the embodiment 1 a ferroelectric thin film of-forming compositions for treatment contains a 10 weight % on a content rate of aminosilane in addition in the embodiment 1 and comparison example 1 a ferroelectric thin film of-forming compositions and validation term and to satisfy the polyethylene glycol for treatment contains a 4.7 weight % on the purpose: an content d ethanol amine 1 as well as the region other than the test e.g. (PZT film) forming a ferroelectric thin film from the behavior of variation of the thickness of sensors. Result to the computer of the also exhibits to 1 (b). Furthermore, the 1 (b) also ferroelectric and content d ethanol amine variation thickness of thin film and is represents a degree a relationship with.

As shown in the 1 (b) also, ferroelectric thickness of thin film and fluctuation rate in the comparison example 1 the content d ethanol amine same thickness in proportion to is also fluctuation rate, content d ethanol amine PZT film thickness of about 19 weight % to about fluctuation rate reaching the 10% it has also been found.

The controller chip, the aminosilane reaction in the embodiment 1 is reacted with the second reactive group in particular hydroxyl groups present in the compositions sol d ethanol amine layer and chemically reacts with derivative having a hydroxyl group at the present in the composition is a hydroxylated a simply with, compared e.g. about 19 weight % content d ethanol amine 1 compared to PZT film thickness of fluctuation rate even when turned over about 4% suppressed to has also been found that it is possible for. I.e., in the embodiment 1 includes a comparison composition of of 1 e.g. is disclosed compared to test e.g. PZT film thickness of fluctuation rate 1 as well as about half after reduced to hereinafter it has also been found. Therefrom, in the embodiment 1, such as amino silane compound containing a ferroelectric for thin film formation, by weight, of d ethylene glycol composition even if the can be prevented effective [...] it has been confirmed that.

Furthermore, the present invention according to a composition for forming ferroelectric thin film and made of such a resin composition for forming a ferroelectric thin film of a wide range of ferroelectric thin film removed by the injection needle device can but is not particularly limited in the uses and the like for example, micro actuator (micro actuator), filter, delay line, lead selector, fork ([...]) transducer for generating a large displacement, control bus watch, transceiver, piezo-electric pickup, piezoelectric earphone, piezoelectric microphone, SAW filter, RF modulator, resonator, delay element, multi strip coupler (multistrip coupler), piezoelectric accelerometer, piezoelectric speaker wherein it is enhanced.

Hereinafter, reference to 2 and 3 also the present invention to the piezoelectric actuator one example of liquid injection head is applied to the inkjet recording head is provided to. as further described. One example of liquid injection head also Figure 2 shows a inkjet recording head multiplex and perspective view show degradation, is Figure 3 shows a plane view and cross section of Figure 2. Also 2 and 3 as shown in the flow passage forming substrate (10) orientations in the present embodiment (110) consisting of silicon single crystal substrate is previously its one side a produced by thermal oxidation silicon oxide (SiO₂) thickness consisting of elastic membrane m micro 1 ∼ 2 (50) is formed.

The valve formation substrate (10) the from one side of the silicon single crystal anisotropic (anisotropy) receives by etching (11) having a center bore zoned pressure by (12) and the width of the with the. Furthermore, refers to the its longitudinal direction and sealing board (30) driving a cart part (32) and a communicating portion communication with (13) is formed. Furthermore, communicate with the part (13) each pressure having a center bore (12) pivoting on the end of longitudinal direction of each ink supply passages (14) is cavities communicate through a.

The pressure having a center bore (12) such as is formed are formation substrate (10) the thickness of the pressure having a center bore (12) optimal is adapted to the density arranged it is preferable that the selecting the thickness. For example, two 180 per inch 1 (180dpi) having a center bore pressure in furnace degree (12) are arranged for the flow passage forming substrate (10) the thickness of the degree m micro 180 ∼ 280, more preferably 220 micro m. are suited for is adjusted to about. Furthermore, for example, having a center bore pressure in furnace relatively high density to 360dpi (12) are arranged for the flow passage forming substrate (10) the thickness of the micro 100. it is preferable that the m hereinafter. A pressure adjacent this having a center bore (12) for inputting data to control consol in between (11) while maintaining rigidity of arranged is since an underground rock. 360dpi or more well as for example, having a center bore pressure in furnace 600dpi (12) may arranged in high density.

Deleted

In addition flow passage forming substrate (10) having a center bore to trasmit asynchronous transfer mode of each pressure side (12) ink supply path of ink-(14) opposite insulates the vicinity of an end communicating nozzle opening (21) is a head hook ([...]) nozzle plate (20) through film or the like which for thermally or an antistatic as occasion demands is constitution: is secured.

On the other hand, the flow passage forming substrate (10) of elastic membrane opposite to trasmit asynchronous transfer mode (50) on thickness is for example about 0.4 micro m in insulator film (55) is formed is insulator film (55) on thickness is for example about 0.2 micro m part of charged the pole just (60) and, thickness for example about 1 micro m in ferroelectric thin film (70) and, thickness for example about 0.05 micro the pole just phase in m (80) is piezoelectric element is laminate forming process refers to (300) .form a. Wherein, piezoelectric element (300) has a charged the pole just (60), ferroelectric thin film (70) and phase change the pole just (80) including a circulation promoted. portion. Generally piezoelectric element (300) either side of a of electrodes as a common electrode by the other of electrodes and ferroelectric thin film (70) for each pressure having a center bore (12) each composed of by patterning. And, here patterned either side of electrodes and ferroelectric thin film (70) both electrodes and where voltage application a new generation is distortion of the piezo active of the piezoelectric and the building. The present embodiment the pole just charged in (60) in communication with a piezoelectric element (300) the pole just phase and common electrode of (80) of an electrostrictive member device (300) but in that of individual electrodes, driving circuit or the wiring in the case of the't prevent troubles from occurring even when turned over same. Each pressure even when any having a center bore (12) each active piezoelectric body 2000 unit is formed on a surface. In addition here piezoelectric element (300) and said piezoelectric element (300) for driving a diaphragm is generated displaced by deflected ., called piezoelectric actuator. Furthermore, elastic membrane in the present embodiment (50), insulator film (55) and charged the pole just (60) functions, the diaphragm.

Furthermore, flow passage forming substrate (10) of piezoelectric elements (300) side layer is the piezoelectric device (300) does not detract from the movement of of such a magnitude that induces space maintained to be within the range space sealable piezoelectric element holding section (31) having sealing board (30) and, piezoelectric element (300) the piezoelectric element holding section (31) is sealed in. Furthermore, sealing board (30) each pressure the having a center bore (12) is of a common ink chambers (100) that constitutes at least a portion of reservoir part (32) is formed, is reservoir part (32) as described above the flow passage forming substrate (10) the communication (13) each pressure communicated with the and having a center bore (12) is of a common ink chambers (100) form a.. Furthermore, sealing board (30) of piezoelectric elements holding section (31) and a reservoir portion (32) between the area of the sealing board (30) in the thickness direction is formed in an inner circumference of (33) is provided and. And, each piezoelectric device (300) is withdrawn from a semiconductor module in which lead electrodes (90) is near at the ends thereof through hole (33) is exposed into.

Furthermore, the sealing board (30) on the sealing membrane (41) and high-fix (42) a compliance (compliance) substrate (40) is provided. In addition of the fixing plates and (42) is made from hard material such as a metal. Is fixed plate (42) driving a cart (100) in the thickness direction the on top eliminates an opening (43) liquid is in reservoir (100) having pliability one side of the sealing membrane (41) is sealed only.

The embodiment the ink jet type recording head in the form of not shown taking the ink from an external ink supply means reservoir (100) from nozzle opening (21) up to fifth silicon nitride layer ink interior, a drive IC not shown having a center bore pressure according to a driving signal of the substrate (12) corresponding to the charged the pole just (60) and phase the pole just (80) between applying driving voltage to the light, elastic membrane (50), insulator film (55), charged the pole just (60) and a ferroelectric film by using a (70) for each pressure by the variation bending having a center bore (12) it is unavoidable that there is some pressure in nozzle opening (21) and is vented without affecting ink droplets from.

Also 4 and Figure 5 shows a pressure also having a center bore (12) in a longitudinal direction of the cross-sectional drawing hereinafter as, also 4 and 5 by referring to the present embodiment in the form of ink jet type recording head of relates to manufacturing method. First, as shown in the 4 (a) also, flow passage forming substrate (10), a heating unit, a cooling in the silicon single crystal substrate is diffusion furnace of about 1100 °C ([...]) on the surface of silicon oxide is thermally oxidized in a resilient membrane (50) of photoresist is formed on the elastic membrane (50) on zirconium oxide (ZrO₂) such as insulating film (55) is formed on. Furthermore, as shown in the 4 (b) also charged the pole just (60) the insulation film (55) is patterned after of predetermined shape. Wherein, for example, charged pole (60) at least platinum and iridium the insulation film (55) is formed by the method is characterized in that on the side of the.

Furthermore, also in this case, 4 (c) each piezoelectric of the contact hole and the via as on the ferroelectric thin-film device (70) a ferroelectric formed film can (75) has a thickness a predetermined. The present in the embodiment in addition in bind to and hydroxyl groups from a specific form hydrophobic colloid containing the ferroelectric thin-films obtained by drying the gelling and excellent, thereto and fired in the high temperature of in addition 600 ∼ 800 °C a ferroelectric metal oxide formed film can (75) to obtain so-called, sol-gel is formed by an determined by formed film can is oriented (75) is. Application of a sol sol-gel in addition, drying, degreasing, by performed in depositing a baking method in, a ferroelectric thin film in addition relatively at low cost, can be easily saved temporarily to is since there is. In addition 1 so as to have a film thickness desired include applied Conference prevented, and a coating and drying a plurality of times can is the resulting may firing/degreasing. Wherein, as a result, the drying after application included in the membrane and the membrane is allowed to perform the for removing solvent which, performing baking of a metal compound by hydrolysis of for inverting the composite oxide..

Specifically, wafer part of charged the pole just (60) ferroelectric chain on lead zirconate titanate (PZT) film of a predefined thickness, the present embodiment made in micro 0.2 m thickness of the order of, by PZT film (ferroelectric precursor layer) by film forming Conference. 1 to form a PZT film has a thickness of from about 0.1 micro m in embodiment, a heating part on the order of 2 Conference film forming minutes by of thickness of the order of 0.2 micro m PZT connection hole through a filling. Furthermore, the wafer, in a diffusion furnace is obtained by multiplying a crystallization a PZT film. And, the a film-forming step and a and depositing a PZT film, PZT film in the firing process a plurality of times, the present embodiment a ferroelectric thin film by 5 in (70) was formed to a thickness about 1 micro m. Well as, film forming process a plurality of times can forming ferroelectric by performing times 1 a firing step may layer.

As such, the present embodiment the pole just charged in (60) on used as the glass panel ferroelectric thin film by sol-gel formed film can glitch (75) since the main frames are formed to form a, contained in composition enables the hydroxy group on a table in a vacuum tub [...].

Furthermore, sol of the existing method state have poor adhesion to substrates flow passage forming composition since tilting of the substrate or applied to the same time, the flowing speed or erected discharged from substrate advisable to have presented problems in embodiment the present but the ferroelectric thin film-forming compositions containing hydrophobic reaction sol response to hydroxyl groups group and it is unavoidable that there was or not the program has instructed the viscosity of composition, flow passage forming substrate applies the first discharge even, on flowing from an input the substrate that are not contact point is turned off. To this end, in a horizontal plane in one high precision much and focusing is substrate without rate ratio during the film forming in successive steps of the insertion part and the film forming process after easy manupla table and adjustable..

Furthermore, thus formed of a ferroelectric formed film can (75) include the material constituting the but with the aid of side materials 1.62 and an acid zirconate titanate, ink jet type recording head for use in material is good if characteristic can be obtained non-variable displacement zirconate titanate does not limited to material 1.62 and an acid. I.e., pressure having a center bore (12) high density, for example, the above-mentioned the 600 dpi the reel lac it stands in the case of an it is preferable that the high frequency induction heater and apparatus. Adopts the reel lac it stands is an amount of a compound of the metal such as metal alkoxide than PZT is to a base station after converting a resale of an additive having hydroxy group n is the fixed number more than is, by the above-mentioned hydrophobic compound in the present invention on a table in a vacuum tub [...].

In addition the present embodiment in film forming method in disclosed examples of sol-gel without limit to an this well as but, such as MOD (Metal-Organic Decomposition) on the ferroelectric thin-film involving spin-coated with the if method for forming [...] prevented effectively for thin film formation ferroelectric can be a flat a ferroelectric thin film composition can be comparatively easily.

And, as such ferroelectric thin film (70) for example is formed, the upper electrode is disposed formed film can consisting of iridium (Ir) (85) formed film can ferroelectric formed stacking (75) and the upper electrode is disposed formed film can (85) for each pressure having a center bore (12) by patterning in on top, also 4 (d) as in this case, , charged the pole just (60), ferroelectric (70) and phase change the pole just (80) consisting of a piezoelectric element (300) to form a. Furthermore, gold (Au) formed film can a semiconductor module in which lead electrodes consisting (95) a passage formation substrate (10) after formation along the front face of for example, such as resist mask pattern (not shown) formed film can lead electrodes through (95) for each piezoelectric element (300) each lead electrodes by patterning (90) is formed on.

Film forming process is at least. The just formation can the aforementioned in an alkaline solution to of the wafer by anisotropic etching is performed using an the pressure having a center bore (12), communication (13) and ink supply passages (14) to form a. Specifically, as in this case, 5 (a) also first wafer of piezoelectric elements (300) side in advance piezoelectric element holding section (31), reservoir part (32) is formed a sealing substrate (30). a second web and joining the. Furthermore, also as shown in the 5 (b), wafer sealing board (30) opposite adhesion with extended from inside of the case is formed on a surface oxide is polished to expose the patterned in shape predetermined silicon layer (51) is mask layer (51) through introduced in an alkaline solution to wafer by performing anisotropic etching by pressure having a center bore (12), communication (13) and ink supply passages (14) to form an the. Furthermore, the anisotropic etching sealing board carries a wafer (30) connected with a surface of..

Furthermore, then sealing board of a wafer (30) opposite to the surface insulates the nozzle opening (21) is specifically nozzle plate (20) and or a, sealing board (30) to compliance substrate (40) a second web and joining the 2 also by partitioning the chip size each which indicates to angle sensor time as large as that of ink jet type recording head in the form of embodiment.

In addition the present embodiment as liquid injection head in ink discharge ink jet type recording head a as an example described but, this by not limiting the e.g., device writing the video of a ribbon cartridge used in the recording head, color filter of liquid-crystal display or the like used in the production of colorant (color) injection head, organic EL display, FED (emitting display) such as for forming electrode of an electrode used in the material injection head, used for manufacturing biochip a organic injection head or the like :.