Method for Manufacturing Silicon Single Crystal Ingot
The present invention refers to silicon growing a single crystal relates to method. Generally a wafer for manufacturing semiconductor element is provided by the process of making a cutting (slicing) slicing a silicon ingot (Ingot) process, -sliced wafer's edge rounded edge polishing process, rough the wafer due to cutting process for planarizing surfaces before a lapping process, edge grinding, or lapping controlled various, mounted on the and a cleaning step to remove contaminants, 2000 suitable shape and surface in order to ensure a surface grinding process and wafer edge of edge polishing process includes. On the other hand, conventional technique, electron mobility for the improved (mobility) has a is patterned along the, for example loss of a dopant caused by evaporation (Dopant) dopant for single crystal growth. is divided into four zones. Electronic generally materials, has a high mobility and has generally a higher volatility the in particular an object by using a histogram critical single crystal growth on single crystal a is then reduced by the length to reduce melt in melt thereof includes volatile the is enhanced concentration of dopant is acceleration operator is included in the data. Oxygen and thereby easily combination is separated from melt metal oxide layer since the in-growth single crystal into America petroleum Institute of oxygen flowing is silicon layer and the substrate. Recent power device (Power Device) by are opened upward and downward on a database used for the same antimony (Antimony), the (Red Phosphorus), arsenic (Arsenic) uses a high-volatility such as silicon single crystal demand significantly increasing in addition of wet liquid to flow down. The low melting articles are and measures the audio in which a feature a higher volatility and move silicon melt in a desired concentration amount of dopant in more material than would to grow single crystals of the silicon is charged into the.. Thus grown silicon generally used for manufacturing semiconductor element is provided a process for making a wafer (Ingot) silicon ingot (slicing) slicing of a cutting process, -sliced wafer's edge rounded edge polishing process, rough the wafer due to cutting process for planarizing surfaces before a lapping process, edge grinding, or lapping controlled various, mounted on the and a cleaning step to remove contaminants, 2000 suitable shape and surface in order to ensure a surface grinding process and wafer edge of edge polishing process includes. On the other hand, conventional technique, electron mobility for the improved (mobility) has a is patterned along the, for example loss of a dopant caused by evaporation (Dopant) dopant for single crystal growth. is divided into four zones. Electronic generally materials, has a high mobility and has generally a higher volatility the in particular an object by using a histogram critical single crystal growth on single crystal a is then reduced by the length to reduce melt in melt thereof includes volatile the is enhanced concentration of dopant is acceleration operator is included in the data. Mono-crystals thereby is connected to the body then it is possible to increase the concentration mainly transformed result in the amorphous is especially. Table 1 with a, silicon ingot growth is connected to the as to increase a nitrogen content in the recessed part, developing packaging silicon information bits are presented to a penetrates the revolving ratio on polycrystalline ingot can be viewed. Wherein, polycrystalline silicon is formed by a monocrystalline old painting ratio initial input a ratio indicative of the rate of as to deliver solidified, single crystal silicon ingot grown that is represented by the following optionally length can be position of a reflector according to each. Furthermore, improves drawability that has lately been more layer is exposed is formed in, i.e. the concentration of the silicon single crystal consumption is the gate word for fabricating the same objects' traces to a and the difficulty large. Japanese opening patent 2011-057476 with a, by controlling the height interface silicon melt said one tried maps the of, the silicon single crystal height interface melting silicon and dopant the actual thickness of one half of the thickness cannot be confirmation step, silicon single crystal growth and thermally treated sample vertical after completion, must via an transmission X-ray actual processing can be confirmed that it cannot immediately be applied to process to. a method comprises a. Furthermore, pressure and argon (Ar) the positive and negative polarities are set ratio of gas be maintained constant the method the ingot is grown silicon in the case of completion may grow completely includes a polycrystalline in process (Tail) tail view, the output signal generated from the second is connected to the semiconductor layer.. Table 2 refers to surface, argon gas pressure and when constant the ratio of the flow, single crystal yield low increases old painting ratio to form a show. ◎ : intention of a good : × usually: defect During growth single crystal relate in particular embodiment, uses a high-volatility dopant (dopant) when using n-acyl-n-alkyl (Solidification) old painting ratio grown to latter length is 60% (Tail) tail and ingot or more in a single crystal control includes a polycrystalline injected into the space. provides manufacturing method a monocrystalline ingot. Embodiment: an single crystalline ingot growing method uses a high-volatility silicon single crystal manufacturing method in the, tail and ingot old painting ratio 60% or more not to cause overlap supercooling as to increase a nitrogen content in ingot process pressure in a chamber, the arrangement and argon gas flow rate ratio value changing the intensity of magnetic field varied highly-volatile higher throughput can be to grow single crystals of silicon. Furthermore, pressure in a chamber, the arrangement/argon gas flow rate ratio value and intensity of magnetic field simultaneously by changing the silicon single crystal growth can be to improve the yields. According to manufacturing method single crystal ingot: an embodiment, in particular single crystal length corresponding to growth latter old painting ratio 60% rate corresponding to reference (solidification) for controlling the polycrystalline silicon ingot can be. Embodiment (Ar) gas flow ratio of argon pressure and relate the same time presenting at through change of for controlling the polycrystalline silicon ingot can be. Embodiment relate old painting ratio intensity of magnetic field over 60% silicon ingot seconds, levels of growth middle by stepping the process conditions, for controlling the polycrystalline silicon ingot can be. Furthermore, growth is finished to a point when the argon pressure and process (Tail) the tail is (Ar) gas flow rate ratio varied changing the intensity of magnetic field, silicon ingot body portion in potential up formed between the first panel and second to grow single crystals of crystallized can be. Figure 1 shows a exemplary growth of 50% after old painting ratio also silicon single crystal ingot. Also Figure 2 shows a silicon single crystal growth method order of:an embodiment. Figure 3 shows a single crystal ingot: an embodiment also in manufacturing method, old painting ratio pressure and argon gas flow ratio of 50% or more or varying values exemplary. Figure 4 shows a is predicted from another embodiment order of:an silicon single crystal growth method. : An single crystal ingot is predicted from another Figure 5 shows a manufacturing method in embodiment, intensity of magnetic field over 60% old painting ratio exemplary the changed setting items. In hereinafter, the present embodiment focuses a appended drawing reference to outputs a relay driving signal. specifically. Just, the present embodiment a disclosure substracte substracte particulars from the present embodiment of the invention having for transmittal to a range of event may, the present embodiment of the invention having substracte idea which are assigned additional components for one cartridge configuration embodiment, deleted, embodiment of alteration will advisable to include. And, in the description hereinafter, the listed in the word 'including' other components or has without excluding the presence of steps. The present invention according to Figure 1 shows a silicon single crystal growth also formed on the multi-method, silicon single crystal growth to is cross section. First, manufacturing method for pulling single crystal aspect embodiment recording sheet when the recording sheet is single crystal growth device (100) describes a. Device (100) silicon single crystal growth: an embodiment the chamber (110), crucible (120), heater (130), pulling means for (150) such as may include a. For example, device (100) single crystal growth: an embodiment the chamber (110) and a, said chamber (110) is of head inside, receiving a crucible retaining silicon melt is rotated at a (120) and a, said chamber (110) is of head inside, said crucible (120) a heater to heat the (130) and a seed crystal (152) the one end coupled to impression means (150) may include a. Said chamber (110) the semiconductor an electronic component, such as a silicon wafers that are divided into several parts in a radial (Ingot) single crystal ingot for (wafer) in the process chamber and supports are for growing provides is formed at a bottom surface. Said chamber (110) on the inner wall of the heater (130) of the chamber (110) side of the side wall part, whose exhaust gases are discharged into so that the batteries cannot be copy insulator (140) can be is provided. For single crystal growth. silicon relate embodiment the oxygen concentration of the quartz crucible to control the (120) rotation of pressure conditions and it is on a variety of factors can be modulating a. For example, to control the oxygen concentration relate embodiment silicon single crystal growth device chamber (110) inside the lower injecting argon gas, and. can be discharged from the crystal growth. Said crucible (120) are put into a silicon melt said chamber (110) is of head inside, can be a quartz. Said crucible (120) outside crucible (120) is supported with the support crucible components constructed of graphite and is installed at the (not shown). An axis of rotation (not shown) on said crucible support styrofoam, that the drive means (not shown) shaft is is rotated by the (120) solid/liquid interface while input gear of the input gear assembly lift and rotate to maintain a same height can be. Said heater (130) has crucible (120) to heat the wafer chamber (110) can be of head inside. For example, said heater (130) has a crucible may be made cylindrical surrounding the support.. Such heater (130) has crucible (120) by which high-purity loaded into obtained by melting of with chunk polycrystalline silicon and is cause radius direction of the silicon. Manufacturing method for growing single crystalline silicon ingot the first deoxygenator embodiment at monocrystalline a seed crystal (seed crystal) (152) a silicon melt to bring slowly soaked into the crystal in making crystal growth while Czochralski (Czochralsk: CZ) can be employing the same. According to method is, first, a seed crystal (152) elongated from necking the crystal in making crystal growth once-(necking), the target diameter growing diametrically determination fabricating the basic form of the which-(shouldering) shawl compared to ring , after constant diameter of a crystal having growing which-(body growing) a body to improve depth deviation, [...] body by a certain length, after the power device is to result in the gradually decreasing diameter of a tail (tail) for separating the molten silicon growth process is performed by single crystal growth is is. In particular during growth single crystal relate embodiment, volatilization sincerity dopant (dopant) when using a single crystal during growth of the second half of process in present in the composition from packaging old painting ratio 60% or more without yields of single crystal capable of growing a monocrystalline ingot. provides manufacturing method. Polycrystalline silicon is formed by a monocrystalline old painting ratio initial input a ratio indicative of the rate of as to deliver solidified, single crystal silicon ingot grown to length. it may be said to be represents. Single crystal ingot: an embodiment the housing seal the manufacturing method uses a high-volatility dopant, for example antimony (Sb), the (Red Phosphorus), germanium (Ge), arsenic (As) can be used for or the like, certain degree when the layer is exposed is formed in to hereinafter, is plate so that a together in addition oxygen concentration. The reason is that such of dopants segregation coefficient (Segregation coefficient) is 1.0 hereinafter to [...] while grown single crystal is decreases by its length thereby melt is higher in concentration of dopant of the low-melting-point speed.. The is enhanced dopant concentration in melt melt herein, the gears of the amount and dipped in the surface where it is heated thereby during growth as to increase a nitrogen content in cooling (constitutional supercooling) in a desired are caused as a plate so that a yields of single crystal is. Then supercooling as to increase a nitrogen content in conditions such as a first voltage is applied to the are met, .. D/> (T1-T3) v/T (liquid) (expressions) Wherein D (diffusivity) that exhibits the properties of the material is value a, a solidifying (T1-T3) and that undergoes a temperature difference with interface is growth rate has v. I.e., does not take place in the order as to increase a nitrogen content in supercooling v (growth rate) must a has a small, (T1-T3) the comprises the following several steps (temperature difference with interface) the. a main body. However, a silicon single crystal is uses a high-volatility actual growth rates for use in growing a the a predetermined region, silicon melt interface of increasing a temperature difference which with hot-zones in addition spacer side (Hot zone) is present. Therefore, the present embodiment the capacitor is formed by connecting a concentration ingot relate of the second half part of includes a polycrystalline silicon ingot growth process is controlled to adjust the focal control at time t2. the. Argon gas pressure and value P-value by pushing a button to decide the ratio indicative of the rate of of, pressure argon gas flow divided by, in hereinafter P-value time as large as that of to illustrate the value or ratio. Table 3 with a, of said servo is or ratio P-value old painting ratio increases. indicating a single crystal yield. ◎ : intention of a good: usually When 1.5 is P-value old painting ratio increases higher, i.e. growing silicon ingot is connected to the single crystal yield poor which capable of confirming the, 60% a P-value old painting ratioat the time of which it will do control 1 hereinafter is always yield single crystal above is able to confirm that preferable. 2 also refers to surface, : an embodiment features order of silicon single crystal growth method. Also 3 with a, : an single crystal ingot manufacturing method in embodiment old painting ratio pressure ratio of 60% or more gas flow with the are it boiled features exemplary altering the value of. Also 2 and 3 embodiment by referring to:an silicon single crystal growth method the, first to silicon single crystal (100) silicon single crystal using (160) start the growth (step S1). At this time silicon single crystal growth imbalance of the laundry the actuating lever growth conditions may be to logically ands the.. Silicon single crystal point grown to some extent, i.e. 50% of silicon melt when the change of the grown single crystal to the seed crystal is solidified is process seconds, 50% argon gas pressure/until a middleold painting ratio (P-value) ratio value flow for 2.0. maintain the. After, pressure/thereafter old painting ratio of silicon melt 50% argon gas flow ratio of a embodiment reducing the value (step S2). After, 60% old painting ratio until is to grow single crystals of silicon on the 1.0. (step S3). I.e., 60% old painting ratio step S3 when scanning said ratio value the adjusting, said 60% old painting ratioold painting ratio the ratio value greater than the time the 50% out of operation States before a ratio value of 1/2 is the step of reducing an.. Said pressure/argon gas flow ratio value (P-value) cremator a monocrystalline to reduce the or and an effluent discharge port formed therein, or device for controlling flow rate of argon gas, argon gas flow rate or for reducing the pressure and flow to that comprises reacting simultaneously increasing, not limited to value of ratio of argon gas pressure/and P-value defined him since the main frames are formed, on the P-value all pressure value or can be the flow rate of argon gas. Therefore, silicon single crystal thickness of one half of the thickness most suitable pressure/argon gas flow defines a ratio is enabled. Tail (Tail) the ingot is grown silicon process quality ingot point by completed the correlation manufactured at a time but step, growth completed wafer while not adversely affecting single crystal ingot in said process includes a polycrystalline silicon ingot tail portion when potential is propagated into the core silicon ingot is (dislocation) by up silicon single crystal yield is can amend sent. Therefore, the present in the embodiment as well as the silicon ingot growing latter, of argon pressure/process tail travel motor is operated according to the ratio value of embodiment. thereby, the cold air flows. Grown ingot end side pressure/argon gas flow rate ratio value of light emitted from at least the and (P-value), said tail reducing the further into the 60% of ratio value (Tail) process is performed on the frame (step S4), includes a polycrystalline silicon ingot flame hole of upper silicon single crystal is of the row can be injected into the space. Said tail process also all forms of sulfur, and decreasing P-value, to grow single crystals of a chamber for or for reduction of the pressure in a, or device for controlling flow rate of argon gas, or argon gas flow rate while reducing the pressure that comprises reacting simultaneously increasing, not limited to value of ratio of argon gas pressure/and P-value defined him since the main frames are formed, on the P-value all pressure value or can be the amount of argon gas. While, . present said P-value a 60% more lowered in the content when argon gas flow rate (Ar) initiator, (Dopant) dopant with the nozzles for acceleration of a desired resistivity band the quality of the silicon ingot can't make immediately after a predetermined time have is. Also 4 refers to surface, other velocity of the rotor is:an embodiment features order of silicon single crystal growth method. Also 5 refers to surface, : an single crystal ingot manufacturing method in embodiment 60% old painting ratio intensity of magnetic field over features exemplary the changed setting items. Application of a magnetic field in the silicon single crystal silicon melt quartz is suppressed to thereby convection eluted from crucible silicon single crystal by reducing the an oxygen atom fixed amount of oxygen inflow into.. The present in the embodiment in, volatilization single crystal growth process, the intensity of magnetic field at the interface a silicon melt comprises the following several steps to increase a diffusion bodies (Diffusion boundary) which serves to point by perceiving corresponding advertisement based on the shown list, supercooling as to increase a nitrogen content in the latter silicon growth not to cause overlap all forms of sulfur, and decreasing intensity of magnetic field converged to the collector applied. Also 4 and 5 embodiment by referring to:an silicon single crystal growth method the, first silicon single-crystal cremator (100) silicon single crystal using (160) start the growth (step M1). At this time silicon single crystal growth imbalance of the laundry the actuating lever growth conditions may be to logically ands the.. The present in the embodiment applied to a silicon melt has M-value in representative of the intensity of magnetic field the invention relates to defined a to. Said M-value 50% of a silicon melt when the change of the grown single crystal to the seed crystal is solidified is process seconds, until a middleold painting ratio 50%. to grow single crystals of which maintain the 100 (step M1). After that a silicon single crystal is 50% or more from the view point to the solidified to reduce M-value. to (step M2). 60% old painting ratio a latter growth until the intensity of magnetic field M1 step contrast to reduced to 70% (step M3). I.e., step 60% when scanning the M3 old painting ratio said intensity of magnetic field includes a second sampling frequency lower than, the intensity of said magnetic field when greater present 60% intensity of magnetic field, said old painting ratio 70% of signal strength of the magnetic field before this reaches the 50% reducing an is. provide the means by which. After, grown single crystal ingot end side of said M-value 80% of light emitted from at least the and a M-value further reducing the tail process is performed on the frame, includes a polycrystalline silicon ingot flame hole of upper single crystal takes place may be injected into the space compared to can be viewed. Embodiment relate said two pressure in a chamber, the arrangement/argon gas flow varied ratio value, a silicon melt changing the intensity of magnetic field applied to silicon single crystal growth conditions rotate reversely to each other, the pressure, flow rate of argon gas, magnetic field parameters (parameter) a to find the optimum one for the following formula 1. method. Therefore, said two embodiment may be for independently executing relate as well as, pressure in a chamber, the arrangement/argon gas flow ratio of value servo is such as examples of the embodiment, and simultaneously melt intensity of magnetic field applied to changing the such as examples of the embodiment. in addition. According to manufacturing method single crystal ingot: an embodiment, single crystal during growth in particular, dopant volatilization sincerityold painting ratio used single crystal during growth (Solidification) according to pressure/argon gas flow rate ratio by altering the value of to avoid a phenomenon of supercooling the as to increase a nitrogen content in the silicon single crystal can be injected into the space. According to manufacturing method single crystal ingot: an embodiment, single crystal during growth in particular, when used dopant volatilization sincerityold painting ratio (Solidification) magnetic field according to the single crystal during growth by changing the strength of silicon single crystal can be injected into the space. Furthermore, as well as latter growth of an ingot silicon relate embodiment, growth is completed at a time point such as said tail process pressure/argon gas flow ratio value by controlling the intensity of magnetic field and, body portion in potential propagation of silicon ingot, thereby preventing the silicon single crystal can be injected into the space. Thereby, the cold air flows over but described about embodiment, the CDK exemplary only, not defined thereby, the cold air flows embodiment, the field belonging substracte embodiment having usual knowledge embodiment the present grow beyond an essential element the first deoxygenator within such a range that causes no with an abnormality in a is not illustrated has various applications including a wide variety of modifications of a main body 2000. For example, each component shown to specifically exemplary embodiment a to cause same to be deformed can embodiment the recording operation.. And such distortion and application relating to differences a set in a range claimed with an included within the scope the first deoxygenator embodiment should be interpreted to will. A method for growing silicon single crystal according to an embodiment of the present invention comprises the steps of: growing silicon single crystal until a solidification rate, which is the rate of polycrystalline silicon solidifying into a single crystal form, is 50%; adjusting the pressure and the argon gas flow ratio in a chamber since the solidification rate is 50% until the solidification rate is 60% by reducing a ratio value which is defined by dividing the pressure value by the argon gas flow; and conducting a tail process after further reducing the pressure or increasing further the argon gas flow compared with the ratio value at the end of the grown ingot after the single crystal growth. The method for growing silicon single crystal including a highly volatile dopant according to another embodiment of the present invention comprises the steps of: growing silicon single crystal until a solidification rate, which is the rate of polycrystalline silicon solidifying into a single crystal form, is 50%; reducing the strength of a magnetic field applied to silicon melt since the solidification rate is 50% until the solidification rate is 60%; and conducting a tail process after further reducing the strength of the magnetic fields compared with the strength of the magnetic field at the end of the grown ingot after single crystal growth.<br> [Reference numerals] (AA) Example; (BB) Comparative example; (CC) Solidification rate (%)<br>COPYRIGHT KIPO 2014<br> Including manufacturing method uses a high-volatility dopant in silicon single crystal, polycrystalline silicon is formed by a monocrystalline to deliver solidified old painting ratio call until the 50% a silicon single crystal is growing the; old painting ratioold painting ratio such as a factor XIIIA substrate 50% or more from the time of the MAC-e a 60% argon and pressure in a chamber, the arrangement wherein modulating the rate of gas flow, a value obtained by dividing an argon gas pressure said as a rate value at a and, said step for reducing ratio value; and single crystal growth after, said ratio value in an ingot growth of light emitted from at least the and corners, or further reduce the pressure said said further increase the flow rate of argon gas then embodiment the tail process; silicon ingot including a single crystal growth method. According to Claim 1, such as a factor XIIIA substrate old painting ratioold painting ratio from said 60% 50% or more is said for the steps of reduce ratio until then embodiment, when scanning 60% old painting ratio said step of directing a ratio value further includes, said 60% greater present old painting ratio the ratio value when said old painting ratio before this reaches the 50% 1/2 of ratio value of all forms of sulfur, and decreasing is characterized by silicon ingot single crystal growth method. According to Claim 1, said tail process the step embodiment, in ingot grown of said corners of said ratio value to a 60% characterized by silicon single crystal growth method. According to Claim 2 or Claim 3, the to reduce the ratio value, for growing silicon single crystal for reducing the pressure in a chamber, the arrangement characterized by silicon single crystal growth method. According to Claim 2 or Claim 3, the to reduce the ratio value, said device for controlling flow rate of the argon gas characterized by silicon single crystal growth method. According to Claim 2 or Claim 3, the to reduce the ratio value, silicon single crystal for growing while for reduction of the pressure in a chamber, said device for controlling flow rate of the argon gas characterized by silicon single crystal growth method. Including manufacturing method uses a high-volatility dopant in silicon single crystal, polycrystalline silicon is formed by a monocrystalline to deliver solidified old painting ratio call until the 50% a silicon single crystal is growing the; old painting ratioold painting ratio no AC voltage is supplied 50% or more silicon melt until a 60% applied to reducing the intensity of magnetic field; and single crystal growth after, an ingot growth of light emitted from at least the corners, the self-party maintains the magnetic field, intensity of magnetic field said further minimizing the embodiment the tail process; manufacturing method including a single crystal silicon ingot. According to Claim 7, such as a factor XIIIA substrate old painting ratioold painting ratio from said 60% 50% or more is said until embodiment is reducing the intensity of magnetic field and then, when scanning 60% old painting ratio said intensity of magnetic field includes a second sampling frequency lower than, 60% greater present old painting ratio when said intensity of magnetic field, said old painting ratio before this reaches the 50% 70% of signal strength of the magnetic field is characterized by reducing an the silicon single crystal growth method. According to Claim 7, said tail process the step embodiment, said in said corners ingot grown of intensity of magnetic field 80% a to characterized by silicon single crystal growth method. Including manufacturing method uses a high-volatility dopant in silicon single crystal, polycrystalline silicon is formed by a monocrystalline to deliver solidified old painting ratio call until the 50% a silicon single crystal is growing the; old painting ratioold painting ratio such as a factor XIIIA substrate 50% or more from the time of the MAC-e a 60% argon and pressure in a chamber, the arrangement wherein modulating the rate of gas flow, said gas flow by dividing the argon pressure is used as ratio value value, said ratio value applied to a silicon melt and reducing the intensity of magnetic field; and single crystal growth after, grown ingot in said corners, the self-party maintains the and magnetic field ratio value of light emitted from at least the pressure and argon gas flow ratio value and intensity of magnetic field further minimizing the embodiment the tail process; manufacturing method including a single crystal silicon ingot. Polycrystalline decimation (S/L %) old painting ratio 20% 5.3% old painting ratio 40% 0.0% old painting ratio 60% 10.5% old painting ratio 80% 15.8% Tail 15.8% P-value old painting ratio (%) Single crystal yield 2 20.0 ◎ 2 40.0 ◎ 2 60.0 ○ 2 80.0 × 2 Tail × P-value old painting ratio (%) Yield silicon single crystal 1.5 40.0 ◎ 1.5 60.0 ◎ 1.5 80.0 ○ 1 60.0 ◎ 1 80.0 ◎ 0.5 60.0 ◎ 0.5 80.0 ◎