CHEMICAL LIQUID SUPPLY APPARATUS AND SEMICONDUCTOR PROCESSING APPARATUS HAVING SAME
The present invention refers to chemical supply device and semiconductor processing device relates to, chemical of high temperature than using a chemical supply device number are exhausted and functional addition number and semiconductor processing device are disclosed to further a pore. Semiconductor processing device determines a normal batch processing device includes a plurality of substrate processing are divided into single unit on the sheet processing device. Recently, the efficacy of the pesticide batch processing device is bad, compared to single processing device to process the paper drying ability etc. the light. Only a single processing device is batch processing device productivity is lowered relative to door number is bar, etc. than the aluminum single processing device for improving productivity. The technical idea of the present invention if the number is defined in order to enhance productivity and progressed into pore-semiconductor number, chemical supply device and a semiconductor processing device having the same number under public affairs 30 to 60 seconds. In the embodiment of the present invention in order to solve the above-described and a number of technical idea by chemical supply device is mounted arm and said bottom nozzle mounted injection nozzle nozzle with a part, number 1 and number 2 number 1 number 2 receiving a chemical tank receiving chemical chemical tank has chemical, chemical liquid to the chemical liquid nozzle for supplying coolant to said chemical and said number 2 said number 1, and said nozzle section has an external appearance, said number 2 mixed chemical and chemical processing fluid comprising mixing member ejecting said number 1, said mixing unit includes a chemical and chemical mixing said number 1 continuously flows and is said chemical supply from said number 2 (with in-line) mixer and said inline mixing pipe leading to said nozzle including inline others characterized. In the embodiment of in technical idea of the present invention, inline mixer said number 1 to number under public affairs react said length of time said number 2 chemical and chemical piping configured to increase the length of elongate piping including characterized. In the embodiment of in technical idea of the present invention, said spiral pipe may have an elongated type characterized. In the embodiment of in technical idea of the present invention, inline mixer and said turbulence-inducing member including said number 2 to the flow of said number 1 chemical chemical characterized by generating turbulence. In the embodiment of in technical idea of the present invention, mounted in said mixing section that heats a fluid flowing in said heating assembly including a mixing section characterized. In the embodiment of in technical idea of the present invention, chemical tank and said number 1 number 1 chemical supply line connecting said mixing member mounted, in-line heater including a liquid heating said number 1 characterized. In the embodiment of in technical idea of the present invention, the temperature of the chemical tank said number 1 received said number 2 number 1 chemical chemical tank characterized is higher than the exhaust received said number 2. In the embodiment of in technical idea of the present invention, said number 1 chemical comprises phosphoric acid, sulfuric acid or combinations thereof which includes either, the polyarylene ether sulfone (fluorine) sequence number to said number 2 characterized by including a chemical etching. In the embodiment of in technical idea of the present invention, at least one of the Si-based chemical said number 1 to number said number 2 and characterized by including a chemical added. In the embodiment of in technical idea of the present invention, a chemical tank said number 1 said number 1 supplies a chemical supplying deionized water and connected to a source chemical source number 1 sodium dodecyl benzene sulfonate, said number 1 sense a pressure chemical tank pressure sensing unit, said number 1 chemical tank temperature sensor and sensing a temperature of the chemical tank top number 1 number 2 including temperature sensor sensing a temperature of the temperature sensor with said number 1 inner bottom, said pressure sensing unit is pressure or exceeds the maximum value, or said temperature sensing unit is for said upper temperature and said lower temperature transferred if it exceeds a maximum value, said number 1 chemical tank and said shut-off inter [lak[lak] Father deionized water supplied to said number 1 chemical, inter [lak[lak] Bringing up for discussion interlock signal and said pressure control unit including a chemical tank pressure control said number 1 characterized. In the embodiment of in technical idea of the present invention, characterized by further including a chemical tank on the upper side of said number 1 with exhaust. In the embodiment of the present invention in order to solve the above-described technical idea and a number of semiconductor processing device is mounted arm and said nozzle by a nozzle with a spray nozzle mounted on a bottom part, said chemical liquid to the chemical liquid nozzle for supplying coolant to a number 1 and number 2 chemical, said nozzle section has an external appearance, said number 1 chemical and chemical processing fluid outflow to the mixing member and mixing said number 2, and said injection nozzle and opposite the substrate onto the substrate comprising a support including a base, said mixing unit includes the chemical liquid from the chemical and chemical mixing said number 1 continuously flows and is said inline mixer and said said number 2 (with in-line) and said mixing nozzle inline others leading to the gas injection lances, said number 1 chemical comprises phosphoric acid, sulfuric acid or combinations thereof which either, said number 2 and number sides have the polyarylene ether sulfone-based etching, said number 1 to number including at least one of the Si-based chemical said number 2 and characterized by the addition of a chemical. In the embodiment of in technical idea of the present invention, said substrate is facing the processing in said injection nozzle, at least a portion exposed silicon nitride exposed silicon oxide layer characterized as having at least a portion. In the embodiment of in technical idea of the present invention, said spray nozzle, said processing fluid toward the substrate during injection, said substrate being disposed laterally spaced apart from a center of said substrate characterized movably supported to a perpendicular. In the embodiment of in technical idea of the present invention, chemical tank and said mixing member connecting said number 1 and number 2 chemical supply line connecting said number 2 number 1 chemical supply line is shorter than said mixing member like chemical tank characterized. The of the present invention in the embodiment, chemical supply device and semiconductor processing device can be single etching process using the photoresist layer. In addition, the of the present invention in the embodiment, hot phosphoric acid added and mixing a liquid chemical dry etching in the process chamber includes one number, parts can be enhances uniformity of the etching process. Figure 1 shows a device of the present invention also one in the embodiment according to chemical supply device having a number representing tank configuration are disclosed. Figure 2 shows a silicon nitride etching process according to the comparison example representing also are disclosed. Figure 4 shows a in-line mixer of the present invention indicating one in the embodiment according to the 3 and also to determine also are disclosed. Figure 5 shows a comparison example of the present invention also one in the embodiment according to chemical supply device according to etching using silicon nitride etching process indicating the process and are disclosed. In the embodiment according to which one of the present invention is also to determine the heating element indicating cross-sectional drawing 6a, 6b also 6a is also of a provided a ' line cross-sectional drawing 16 are disclosed. Figure 7 shows a schematic of the present invention also one in the embodiment according to visually representing a surface chemical tank are disclosed. In the embodiment according to a semiconductor processing device of the present invention also 8a and 8d is also one semiconductor device using the drawing indicating number bath method are disclosed. Hereinafter, in the embodiment of the present invention with reference to the attached drawing a specific detailed the on-sensors other. In the present invention to the art person with skill in the art of the present invention in the embodiment are more completely describe a target ball number and, in the embodiment is to various other shape can be, in the embodiment of the present invention limited to a range not the. The complete disclosure and such further fidelity rather these in the embodiment, of the present invention to one skilled in the event number for which to more fully convey the ball are disclosed. In addition, the thickness or size of each layer for descriptive convenience in drawing and clarity S. and apparatus. Throughout the specification, film, region or wafer (substrate) other components such as one component is "on", "connected to", or "coupled" when referred to that position, the aforementioned one component with other components directly "on", "connected", or "coupled to" contact or, sheets can be interpreted that another components may be present. While, one component of other components "directly on", "directly connected", or "directly coupled to" mentioned that when located, there may be another component sheets is not interpreted substrate. The same code is identical elements defines other. As used in the specification, the term "and/or" all listed in item corresponding one and at least one combination. In the specification number 1, number 2 of various terms in the member, component, region, layers and/or partial but used to explain, these members, components, regions, layers and/or partial must not be defined by these terms by a nontrivial disclosed. These term one element, component, region, layer or a part of the other areas, are used for distinguishing or partial layer formed on. The, above-mentioned hereinafter the number 1 member, component, region, layer or portion of the present invention without leaving the present number 2 member, component, region, layer or a part of the can be defines. In addition, "on" or "over" and "under" or "beneath" relative terms such as illustration in the drawing as if they were other factors for any elements can be use therein describes a relationship. In addition to the drawing direction described in relative terms of including other directions can be understand that intended to be. For example, if drawing can be inverted (turned over) in element, other factors present on a face of the top of the above other elements of the lower portion of the elements that a straight line direction on the surface to be coated. Therefore, the term "on" fields for example, particular orientation dependent "under" and "on" direction of the drawings can be both. (Other direction with respect to the 90 degree rotation) if components directed in different directions, the specification can be used in land the relative interpreted. The terms used in particular are used in specification to account for in the embodiment, the present invention relayed a number for endured. As used in the specification, if not a single shape providing language translators in other cases identified deficiencies in a more precise manner, can be a plurality of types. In addition, when used in the specification and/or "including (comprising)" "comprises (comprise)" handle shapes, number, step, operation, member, element and/or presence of these particular in which, one or more diverse shapes, number, operation, member, element and/or the presence or addition times number groups does not disclosed. Hereinafter, in the embodiment of the present invention in the embodiment of the present invention are ideal as shown in reference to determine the drawing through a browser substrate. Drawing substrate in, for example, techniques and/or tolerances according number bath (tolerance), can be shown in shape deforming are expected. Thus, in the embodiment of the present invention is shown in the event the region specification number it became grudge in shape and not interpreted, for example number larger than the size variation of the resulting should contain other. Hereinafter in the embodiment are a combination of one or several may be filled in the base station. Hereinafter solution supply device and semiconductor processing device described in different configuration wherein the number needed only illustratively may have here in, the present invention is not limited to content found each other. Figure 1 shows a device of the present invention having the same configuration representing a one in the embodiment according to chemical supply device also are disclosed. The reference also 1, in the embodiment according to the present invention to an chemical supply device (10) includes a roller (100), the nozzle section (130), the mixing section (140) can be a, semiconductor processing device (1) is said inlet device (10) on a substrate (W) on the support substrate supporting (170) can be a. The chemical liquid (100) is mounted part (130) can be to 2 or more together. For example, the chemical liquid (100) is number 1 number 1 chemical to accommodate and supplying chemical tank (110) and number 2 number 2 chemical to accommodate and supplying chemical tank (120) can be a. Number 1 chemical tank (110) includes a chemical source number 1 (110a) connected with the, number 1 chemical tank (110) from the mixing section (140) extending number 1 chemical supply line (110L) has a. Number 2 chemical tank (120) is number 2 chemical source (120a) connected with the, number 2 chemical tank (120) from the mixing section (140) extending number 2 chemical supply line (120L) has a. Number 1 chemical tank (110) includes a chemical source number 1 (110a) supplied from the number 1 and accommodate chemical, chemical supply line number 1 (110L) is number 1 chemical tank (110) connected with the chamber from the nozzle section (130) can be together with the number 1. Number 2 chemical tank (120) is number 2 chemical source (120a) and accommodate chemical supplied from the number 2, number 2 chemical supply line (120L) number 2 is chemical tank (120) connected with the chamber from the nozzle section (130) can be together to number 2. Number 1 chemical tank (110) has a high temperature (for example about 160 degrees or greater) are supplied to the liquid chemical etching process, e.g. phosphoric acid (H3 PO4 ), Sulfuric acid (H2 SO4 ) Or combinations thereof which includes either a can. While, number 2 chemical tank (120) comprising a bath can be is at ambient temperature, e.g. number 1 included chemical etching rate of the silicon nitride to be added to the chemical (etch rate) (florine) for improving a fluorine based etching can be a number. Number 1 chemical tank (110) connected to the circulating line number 1 (110c) is number 1 chemical tank (110) and deionized water (deionized water, DIW) chemical supplied number 1 to number ball circulating these chemical polymer material can be disclosed. Circulating line number 1 (110c) can be valve is installed in the pump. In addition number 1 circulating line (110c) said number 1 number 1 circulation heater installed chemical can be heated to a predetermined temperature, for example about 170 degrees temperature can be liquid heating said number 1. Number 2 chemical tank (120) connected to the circulating line number 2 (120c) is number 2 chemical tank (120) is supplied to the circulation number 2 number 2 for homogeneously mixing chemical 1308. ball number. Circulating line number 2 (120c) can be valve is installed in the pump. In addition number 2 circulation line (120c) said number 2 number 2 circulation heater installed chemical can be heated to a predetermined temperature, for example about 25 degrees temperature can be liquid heating said number 2. Number 1 main line (110r) is number 1 chemical supply line (110L) branched from, some number 1 number 1 chemical chemical tank (110) for recovered 1308. ball number. Number 1 main line (110r) is number 1 chemical supply line (110L) branched from the valve flow number [e[e] giga installed nozzle section (130) configured to regulate the flow rate of chemical under [e[e] number can be supplied to the number 1. Number 2 recovery line (120r) is number 2 chemical supply line (120L) branched from, some number 2 number 2 chemical chemical tank (120) for recovered 1308. ball number. Number 2 recovery line (120r) is number 2 chemical supply line (120L) branched from the valve flow number [e[e] giga installed nozzle section (130) configured to regulate the flow rate of chemical under [e[e] number can be supplied to the number 2. DIW source (112) is a chemical liquid in order to maintain a constant number 1 number 1 DIW chemical tank (110) for supplying further 1308. ball number. DIW source (112) can be DIW supply lines between pump and valve is connected. DIW source (112) DIW supply line number 1 through the recovery line (110r) or connected, or DIW supply line number 1 through chemical tank (110) can be configured to be directly plugged into. The nozzle section (130) is mounted support shaft (133), nozzle driver (134), nozzle arm (131) and injection nozzle (132) can be comprising. The nozzle section (130) includes a roller (100) supplied from the chemical of 2 or more thereof can. In addition, injection nozzle (132) is a substrate support (170) on one surface of the substrate (W) can be shielded surface of processing fluid. Nozzle arm (131) one end of the injection nozzle (132) engages with the, other end nozzle support axis (133) can be combined with. Nozzle support axis (133) can be vertically installed on the chamber side. Nozzle support axis (133) one end of the nozzle driver (134) coupled to a substrate. Nozzle driver (134) nozzle support axis (133) or lower chamber rotating the spraying nozzle (132) process capable of parked position. An injection nozzle processing position (132) of the substrate (W) from a direction perpendicular to spaced apart locations and movably supported to a center of the substrate (W), an injection nozzle and a standby position (132) is deviated from said processing position are disclosed. Injection nozzle (132) toward the substrate (W) of process fluid injecting other. In addition, nozzle arm (131) to the nozzle support shaft (133) coupled to the injection nozzle (132) (W) substrate or moved to the overhead, substrate (W) at the top injection nozzle (132) while processing fluid can be configured to move. On the other hand, substrate support (170) includes a substrate (W) to rotate the supporting substrate during process (W) can be. Substrate support (170) a body member (171), support pin (176), tight the pin (175), and the support shaft (172) may have a. Body member (171) in which the ball may have generally circular upper surface when watching upper number. Body member (171) of the inner case drive member (173) is rotatable by a support shaft (172) can be coupled to fixed. Support pin (176) includes a plurality number ball 1308. Support pin (176) includes a body member (171) for the edge portions of the upper surface at a predetermined spacing rods are disposed body member (171) can be in the position. Support pin (176) with each other by a combination between a generally annular ring can be arranged. Support pin (176) includes a body member (171) (W) (W) rear view of reinforcement apart substrate from a top surface of substrate support edge of the can. tight the pin (175) can be ball a plurality number, body member (171) in the center of support pin (176) remote than can be arranged. tight the pin (175) includes a body member (171) to silicidized to 1308. ball number. tight the pin (175) is substrate support (170) rotates the substrate when the substrate (W) (W) in the home position can be does not come off direction from the supporting plate. tight the pin (175) includes a body member (171) arranged for linear movement between a standby position along a radial direction of support position so as to enable the ball number can be disclosed. The, support standby position compared body member (171) farther away from center of position are disclosed. Substrate chips (W) (170) in the loading or unloading tight the pin (175) and the standby position, substrate (W) wet etching process execution tight the pin (175) can be support location. In the holding position tight the pin (175) can be make contact substrate (W). On the other hand, the mixing section (140) includes a roller (100) from the introduced number 1 and number 2 can be mixed chemical chemical processing fluid port. The mixing section (140) includes a line (with in-line) mixer (141) and in-line mixer (141) from injection nozzle (132) extending to the mixing pipe (145) can be comprising. The mixing section (140) includes a roller (100) from the introduced number 1 and number 2 can be mixed chemical chemical processing fluid port. The mixing section (140) is mounted unit (130) so that number be co to be fetched. In-line mixer (141) one end of the roller (100) has a transfer from fed and, mixing pipe (145) an in-line mixer (141) from the other end of injection nozzle (132) for conveying a fluid and capable of treating. In-line mixer (141) is mounted arm (131) mounted 1308. ball number. In-line mixer (141) includes a roller (100) from 2 or more continuously flows and is incorporated in the support member flow such, they can be uniformly mixed fluid outflow to. Mixing pipe (145) one end of the in-line mixer (141) is connected, the other end opposite the injection nozzle (132) can be connected. Mixing pipe (145) an in-line mixer (141) a mixture of 2 or more out of the chemical nozzle (132) and to convey a, transporting said disparate 2 or more chemical react time can be under public affairs number. Mixing pipe (145) on a 2 or more chemical reacts to a stable state can be adjustable to accommodate port, about 30 cm to about 200 cm can be selectively switched between. Mixing pipe (145) on a line mixer (141) the nozzle arm (131) can be longer than the distance between one end of, mixing pipe (145) are arranged in a wound form 1308. ball number. On the other hand, in-line (with in-line) heater (114) is number 1 chemical tank (110) mixed with part (140) connecting number 1 chemical supply line (110L) can be mounted. In-line heater (114) is used to adjust the ball number exhaust temperature can be disclosed. In-line heater (114) is number 1 and number 2 number 1 may be heated at constant temperature before chemical chemical mixed chemicals can be used. I.e., in-line heater (114) is number 1 chemical mixing section (140) and allocates power generating a temperature at which the mixing in a rack, liquid heating 1308. ball number to number 1 in advance. For example, the temperature of the chemical number 1 phosphoric acid, sulfuric acid or combinations thereof which includes either a, chemical etching sequence number when room temperature range including a number 2 supplied to the polyarylene ether sulfone, number 1 sides have the in-line heater (114) by about 170° to about 180 also is heated by the mixing section (140) can be supplied. In some in the embodiment, number 1 chemical supply line (110L) is number 2 chemical supply line (120L) shorter than can be configured. Number 1 are supplied to the thus permitting a high temperature chemical, chemical tank number 1 from the mixing section (140) be conveyed to a processing results in an the temperature change may affect. While, the vacuum can be supplied at ambient temperature for sensing impact number 1 number 2 the solutions are relatively be compared to chemical process. The, hot sprays a chemical chemical supply line number 1 number 1 (110L) while the second temperature compensation to prevent, chemical tank number 1 (110) is number 2 chemical tank (120) than the mixing section (140) can be disposed adjacent to. As a result, number 1 chemical supply line (110L) number 1 reduces the length of the transporting chemical liquid can be minimize temperature variations may occur. On the other hand, in the embodiment in part, about 160 degrees or greater number 1 chemical of crosslinked resin-phosphoric acid, sulfuric acid or combinations thereof can be used including chemical one. Thus, number 1 chemical tank (110) at a temperature of about 160 to about 180 degrees chemical number 1 number 1 chemical supply line (110L) capable of flowing out into the. Phosphoric acid, sulfuric acid or combinations thereof including number 1 either chemical silicon nitride (Silicon Nitride, SiN) is etched can be used. For example, phosphoric acid silicon nitride Si3 N4 Allowed to react with, water-soluble product Si3 (PO)4 And NH3 Can be generate. Only, a liquid chemical subjected to the temperature of silicon nitride etching process comprises phosphoric acid. Thus, the chemical liquid is a liquid chemical phosphate (100) rotor nozzle section (130) that is fed during high temperature will remain still may be required disclosed. In order to improve the productivity of a upper end, at least about 160 degrees or greater chemical phosphate substrate (W) to be spaced away can be required to perform a high temperature. Figure 2 shows a silicon nitride etching process according to the comparison example representing also are disclosed. Comparison of Figure 2 embodiments when only using hot phosphoric acid, a phosphoric acid solution is made from a high temperature to HF triols, and hot phosphoric acid on Si-based (e.g., si-a O) HF number added to a plating solution is made from triols having a predetermined wavelength. Wherein the triols heterogeneous chemical mixing can be the pipe type T means. The reference 2 also 1 and also, in some in the embodiment, the number 2 chemical silicon nitride etching process comprising etching sequence number in polyarylene ether sulfone functionality (fluorine) number can be added. Hot phosphoric acid using the silicon nitride etching process wafer etching device improve the components of the available temperature limit flow tides. The device wafer etching using hot phosphoric acid as number added to improve functionality, polyarylene ether sulfone series number together with a phosphoric acid etching can be use in a high temperature. For example, polyarylene ether sulfone-based etching number is HF, NH4 F, ABF, si-a Fx Can be a. 2 studied also appearing, hot phosphoric acid solution polyarylene ether sulfone-based etching in hot phosphoric acid results in number HF than only silicon nitride etching process increases can be know. I.e., such as with a solution of hot phosphoric acid etching a silicon nitride the arm unit with polyarylene ether sulfone series number can be, etching process can be improve productivity. Only, injection nozzle (132) by sequentially of the processing fluid injected through the order polyarylene ether sulfone-based etching is chemical phosphate mixed with but may number, polyarylene ether sulfone-based etching is mixed with the chemical properties of a field emission display has a number set up excessively. The, polyarylene ether sulfone-based etching number is not excessively volatile towards substrate (W) are required to be. In one in the embodiment, like phosphate of a field emission display comprising etching down the number 1 and number 2 the solutions are a separate feed line number based polyarylene ether sulfone chemical mixing section (140) can be supplied. And the mixing section (140) is mounted part (130) number 1 and number 2 number 1 and number 2 coated with chemical chemical injection just before the chemical to mix the chemical can be. , the polyarylene ether sulfone-based etching is chemical dry etching silicon nitride for even number mixed with high temperature, not excessively volatile substrate (W) can be injection unit for processing. On the other hand, at least one of the number 1 and number 2 chemical chemical passivation (passivation) against silicon oxide added in a portion where the conductive function number Si series number can be added. I.e., a silicon oxide-silicon nitride surface of Si added number can be improve. For example Si sequence number is added si a-O, si-a cH3 Can be like. Polyarylene ether sulfone-based etching silicon nitride of the mask having more than that number in HF dry etching silicon oxide may have. The, at least some of the silicon nitride substrate exposed and at least some silicon advances etching a silicon nitride film, a silicon oxide etching-polyarylene ether sulfone can be excessive etching number 2000. The, such as hot phosphoric acid may use a polyarylene ether sulfone-based etching method such as dry etching silicon nitride adding number while excessively etching silicon oxide can be used for adding Si series number. As shown in fig. 2, Si sequence number added phosphoric acid solution and polyarylene ether sulfone-based etching number utility comprises mixed with high temperature, hot phosphoric acid have used alone than if silicon nitride etching process is also used for can be improved. I.e., at least some of the silicon nitride etching said exposed substrate and at least some silicon in a silicon nitride film, a silicon oxide layer while preventing Si added sequence number, an efficient scheme for dry etching the silicon nitride layer can be disclosed. Figure 4 shows a in-line mixer of the present invention indicating one in the embodiment according to the 3 and also to determine also are disclosed. Figure 5 shows a comparison example of the present invention also one in the embodiment according to chemical supply device according to etching using silicon nitride etching process indicating the process and are disclosed. The reference also 3 and 4 also, in-line mixer (141) is packing and flow pipe 2 or more chemical reaction rate for increasing the turbulence generating member (143) can be a, in addition disparate 2 or more chemical react to produce a stable state time number under public affairs fro under public affairs number the chemical composition of an elongate pipe (142) can be comprising. Only, appearing also studied at 2, hot phosphoric acid solution polyarylene ether sulfone-based etching Si series number and number added when adding removal process is performed, while the etching rate of the etching rate of the silicon nitride for improved overall so that the valves are be non-uniform. In particular, when added number of phosphate in the range of mixed with high temperature Si-HF, appears to be more uniform than if only hot phosphate HF mixing is also used for the semiconductor substrate can be. Said non-uniform etching rate of the etching sequence number Si based on high temperature conditions polyarylene ether sulfone occur because of the chemical reaction between the number can be added. Polyarylene ether sulfone based on Si substrate (W) in number of chemical reaction etching sequence number added side, shielded surface substrate (W) can be driven by the non-uniform concentration of polyarylene ether sulfone on entirely. The concentration of said polyarylene ether sulfone can be due to non-uniform force between the non-uniform silicon nitride etching act. On the other hand, also with reference to the 1 3 also, one in the embodiment according to the mixing section (140) included in the in-line mixer (141) is elongate pipe length (142) can be comprising. An elongated type piping (142) is disparate 2 or more chemical react to produce a stable state time under public affairsunder public affairs number the chemical composition of number can be configured. I.e., length extending pipe (142) Si series number and time on the polyarylene ether sulfone-based etching number is sufficiently reacts under public affairs number can be added. The process fluid chemically stable state can be injection unit of substrate (W). An elongated type piping (142) at an elevated temperature conditions responsive 2 or more suitable for chemical composition of the support member in a stable state under public affairs 1308. ball number length number. An elongated type piping (142) on a line mixer (141) from injection nozzle (132) longer than reaching be straight paths. For example, elongate piping length (142) may have a curved shape or in a spiral. The, length extending pipe (142) as a spiral therein is not flowing through the 2 or more chemical by rotational motion to linear motion, said 2 or more chemical to be mixed can be smoothly. In addition, inline mixer (141) from injection nozzle (132) extending mixing pipe (145) length an elongate pipe (142) as well as a spiral or may have a curved shape. An elongated type piping (142) as well as, mixing pipe (145) Si series number and time on the polyarylene ether sulfone-based etching number is sufficiently reacts under public affairs number can be added. An elongated type piping (142) between the length of the mixing pipe (145) length of about 100 cm to about 200 cm length combining can be selectively switched between. Studied appears in Figure 5, an elongated type piping (142) with in-line mixer (141) of the substrate (W) are formed is also used for etching silicon nitride in can. Further, an elongated type piping (142) by using, hot phosphoric acid, polyarylene ether sulfone-based etching Si series number and number using a T type pipe when added as triols can be made at the end of the silicon nitride due to non-uniform of the mask. In addition, injection nozzle movably supported to a horizontal substrate (W) in a conventional method of processing fluid injection nozzle while moved in the direction of scan (nozzle scan) compared to type, length extending pipe (142) when silicon nitride etching process using nickel. On the other hand, also with reference to the 1 4 also, one in the embodiment according to the mixing section (140) included in the in-line mixer (141) includes a pulley member (143) can be a. A pulley member (143) has a straight-line flow of fluid can be configured to interfere with the interiors. The interiors of fluid flowing turbulence generating member (143) and flow of fluid impinging on the conveyance direction, the chamber can be converted into turbulent laminar flow. 2 or more disparate flow turbulence can be more uniform in a time shorter than the solutions are uniformly mixed. I.e., a pulley member (143) is runs within pipes in agitator can be serves. A pulley member (143) of the fluid flow relative to the major axis the heating, 2 or more of coating liquid for straight-line flow impeded, having screw (screw) can be at an oblique angle to a surface. 2 or more chemical flows along inclined surface is angled such that screw through while in-line mixer (141) can be uniformly mixed elements adjacent to the outlet. Further, screw in-line mixer (141) of piping can be used to push ball number fixed on a central axis, said screw having an axis of rotation said shaft can be. Said turbulence generating member (143) has heat resistance and corrosion resistance to high temperature and chemical may have (Teflon) Teflon-based material can be made. A pulley member (143) is disparate 2 or more chemical to be mixed smoothly by, injection nozzle (132) in the processing fluid is injected into the chemical constituents in concentration over time can be metallic. In addition, a pulley member (143) including a inline mixer (141) from injection nozzle (132) extending mixing pipe (145) length (of Figure 3 142) as well as elongate pipe may have a curved shape or in a spiral. I.e., a pulley member (143) extending from the mixing pipe (145) length (of Figure 3 142) as well as elongate piping on Si added number and time-based etching number is sufficiently reacts polyarylene ether sulfone can be under public affairs number. At this time, mixing pipe (145) about 30 cm to about 100 cm length of the can be selectively switched between. A pulley member (143) 2 or more smoothly achieved using chemical, chemical mixture stably can be reduce the response time it would take to chemical composition. Reaction time is shortened by, mixing pipe (145) to reduce the length of the inside can be under public affairs number stable state in the processing fluid. As a result, turning angle can be injection treatment fluid is to reduce the distance, which reduces reduction widths can be temperature of the processing fluid. Studied appears in Figure 5, a pulley member (143) including a inline mixer (141) is not substrate (W) in an overall uniform treatment of silicon nitride etching process is also used for appears can be. In addition, a pulley member (143) when a, nozzle scan (nozzle scan) compared to scheme, silicon nitride etching process has been improved, further not to induce only using an elongated type piping (of Figure 3 142) is also used for silicon nitride etching process can be improved. But, also 3 and 4 also shown in a pulley member (143) and length extending pipe (142) an in-line mixer (141) simultaneously with each can be used alone or used. In the embodiment according to which one of the present invention is also to determine the heating element indicating cross-sectional drawing 6a, 6b also 6a is also of a provided a ' line cross-sectional drawing 16 are disclosed. 1 6a and 6b also with reference also to the also, heating member (150) comprises a mixing unit (140) is mounted, the mixing section (140) can be current flowing heating fluid. Heating element (150) having a thickness of any cover member (151) and said cover member (151) the inner wire (152) including a be a piping for heating jacket. Cover member (151) is in-line mixer (141) and the outer circumference of the mixing pipe (145) surrounding the outer periphery of the can, can be glass fibers. Hot wire (152) the cover member (151) can be of a constant longitudinal or width direction at predetermined pitches. Hot wire (152) from the exterior power applied by heating, the mixing section (140) can be heating fluid flowing in the heat. Heating member (150) comprises a mixing unit (140) in 2 or more chemical processing fluid at a process of mixing (e.g., mixture of number 1 and number 2 chemical chemical) is reduced in order to prevent the temperature of the in-line mixer (141) and mixing pipe (145) can be mounted on the outer circumference of. An elongated type piping (142) or mixed piping (145) sufficient to extend the length of time and number 2 or more chemical react public box, heating element (150) is said time hot phosphoric acid etching a bottom surface of a treatment fluid by heating can be prevented from falling. Heating element (150) is said injection nozzle (132) to a predetermined temperature above the temperature of the processing fluid injected through the injection can be heating said processing fluid. For example, heating member (150) at a temperature of about 160 degrees or a treatment fluid is injection nozzle (132) being injected through said processing fluid can be heated. Figure 7 shows a schematic of the present invention also one in the embodiment according to visually representing a surface chemical tank are disclosed. The reference also 7, chemical tank (210) includes a pressure sensing unit (211), the temperature (212a, 212b), inter [lak[lak] Father (213), and pressure control unit (215) can be a. Chemical tank (210) is used chemical supply device can be used to accommodate and chemical of a field emission display. Chemical tank (210) is also shown in chemical tank 1 number 1 (of Figure 1 110) implementation being. Chemical tank (210) such as hot phosphoric acid in the solution is constant in order to maintain the DIW be supplied. The DIW when supply of said chemical tank (210) can be in exhaust and viscosity difference occurs between, in addition can be temperature raced up pressure due to rapid water evaporation. Measures spin cater for causing rapid leak to the outside door number can be raised. The, chemical tank such as number 1 (of Figure 1 110), high temperature and high pressure high viscosity when receiving a liquid chemical phosphate, stable for the operation chemical tank (210) in said inside means checks the state number [e[e] it will do should. Pressure sensing unit (211) is a chemical tank (210) mounted to a body of the, chemical tank (210) can measure internal pressure of the pressure gauge or pressure sensor can be composed. Pressure sensing unit (211) is a chemical tank (210) within a predetermined pressure if it exceeds a, can be configured to generate a detected signal. Pressure sensing unit (211) is installed in a sense signal is inter [lak[lak] Father (213) can be delivered. The temperature (212a, 212b) is a chemical tank (210) top-to-temperature sensor for sensing a temperature of number 1 (212a) and chemical tank (210) temperature sensor sensing a temperature of the inner bottom number 2 (212b) can be a. The temperature (212a, 212b) is number 1 temperature sensor (212a) and number 2 temperature sensor (212b) measured from said upper temperature and said lower temperature the temperature difference exceeding a maximum value, sensing signals can be configured. For example, upper temperature and said lower temperature difference said chemical tank (210) which is housed inside the mix becomes irregular can be chemical means. The temperature (212a, 212b) generated in a sense signal is inter [lak[lak] Father (213) can be delivered. Inter [lak[lak] Father (213) is said pressure sensing unit (211) or a temperature sensing portion (212a, 212b) and are connected to, said pressure sensing unit (211) and said detection signal in the temperature (212a, 212b) receiving a detection signal can be generated. For example, inter [lak[lak] Father (213) includes pressure sensing unit (211) according to the sensed signal generated in, pressure adjusting portion (215) to be interlock signal input. The multi-interlock signal said chemical tank (210) capable of therein. Pressure adjusting portion (215) is a relief valve (relief valve) and discharge line can be. Said interlock signal while chemical tank through a discharge line of fluid communication with the relief valve body and, as a result chemical tank (210) is equal to the pressure within the lower. In addition, inter [lak[lak] Father (213) is the temperature (212a, 212b) according to the sensed signal generated in chemical tank (210) can be supplied to the chemical and DIW of supply. I.e., inter [lak[lak] Father (213) of the chemical liquid is supplied from the source chemical is installed on a side valve (210av), circulation line of a valve (210cv), or chemical recovery line of a valve (210rv) number [e[e] it will do be closing. On the other hand, chemical tank (210) with the exhaust side and on (217) can be a. Exhaust (217) is due to evaporation of DIW chemical tank (210) can be increase of pressure. In particular receiving high temperature chemical chemical tank (210) occur because of excessive pressure rapid rise in supply DIW to prevent, exhaust (217) is a chemical tank (210) can be increase of exhaust capacity. In addition, chemical tank (210) is an outer exhaust cam configured (219) disposed internally can be. The, outer drum is chemical leakage even if chemical (219) in the generator through the generation of additional door number can be prevent. In the embodiment according to a semiconductor processing device of the present invention also 8a and 8d is also one semiconductor device using the drawing indicating number bath method are disclosed. The reference also 8a, semiconductor substrate (310) the pad oxide layer (321), number 1 silicon nitride (322), intermediate oxide (323) and number 2 silicon nitride (324) sequentially stacked mask stack pattern (320) is formed, mask stack pattern (320) is removed from a semiconductor substrate (310) the semiconductor substrate (310) a trench formed on the substrate. Then, trench is formed in a semiconductor substrate (310) on the front side of an isolation insulating film made of silicon oxide film (330) formed on the substrate. An isolation insulating film (330) is silicon nitride number 2 (324) is patterned to 1308. ball number. The reference also 8b, silicon nitride number 2 (324) are formed selectively through number 1308. wetting ability. Intermediate oxide (323) serve as the silicon nitride etch process number 1 (322) are deposited can be prevent. Silicon nitride number 2 (324) when the number of special and an isolation insulating film (330) number 1 the upper surfaces of silicon nitride (322) projects over the top surface of remaining to be coated. The silicon nitride number 2 (324) is also 1 to 7 described with reference to semiconductor processing device is also performed using wet 1308. number through the wetting ability. Said semiconductor processing device of a field emission display including number 1 phosphoric acid with chemical supply device is chemical and, polyarylene ether sulfone-based etching chemical including number 2 a number, said number 1 and number 2 chemical and/or mixed fluid contained chemical added number Si series can be supplied. Injection nozzle (of Figure 1 132) semiconductor substrate (310) from a center of the semiconductor substrate (310) at a point spaced in a direction vertical to the surface of said processing fluid injection can be. Semiconductor substrate (310) in processing, silicon nitride number 2 (324) at least a portion of exposed, an isolation insulating film (330) at least a portion of minor axis length is 1. Polyarylene ether sulfone-based etching using hot phosphoric acid number is added to the silicon nitride film of the chemical liquid like number 2 (324) while enhancing etching process, a silicon oxide film consisting of added Si series number and an isolation insulating film (330) can be prevented from being etched. The 8c also reference, number 1 silicon nitride (322) projecting over an isolation insulating film (330) number 2 for silicon nitride (324) off the first CMP can be performing an etch stop layer. The reference also 8d, number 1 silicon nitride (322) include wet etching through wetting ability selectively number can be disclosed. The, pad oxide (321) number ball 1308. the etch stop layer. The, said wet etch process is performed to the rotor as described with reference to 8b also during semiconductor processing device also 1 to 7 also can be performed using. All of the technical idea of the present invention description is to avoid a described illustratively provided, in the present invention if the properties of the present invention is provided to essentially inputted from deviating from a person with skill in the art various modifications and deformable will. Thus, the present invention in the embodiment of the present invention are to define the disclosure but rather to explain the technical idea and, in the embodiment of the present invention by not the limited range of such feature. Under the protection range of the present invention must be interpreted by fee so as to range, its equivalent range of all technical idea is within the range of the present invention will be interpreted rights. 100: roller 110: number 1 chemical tank 120: chemical tank number 2 114: in-line heater 130: nozzle section 131: nozzle arm 132: injection nozzle 140: the mixing section 141: mixer 142: an elongated type piping 143: a pulley member 145: mixing pipe 150: heating element 170: substrate support The present invention relates to a chemical liquid supply apparatus, which improves productivity in a single wafer semiconductor manufacturing process, and a semiconductor processing apparatus having the same. The chemical liquid supply apparatus according to an embodiment of the technical concept of the present invention can comprise: a nozzle part having a nozzle arm and a spread nozzle installed on one end of the nozzle arm; a chemical liquid supply part which has a first chemical liquid tank accommodating a first chemical liquid and a second chemical liquid tank accommodating a second chemical liquid and supplies the first chemical liquid and the second chemical liquid to the nozzle part; and a mixing part which is provided in the nozzle part and mixes the first chemical liquid and a second chemical liquid to discharge the processed liquid. The mixing part can include an in-line mixer mixing the first chemical liquid and the second chemical liquid which are successively introduced from the chemical liquid supply part, and a mixing pipe which is connected from the in-line mixer to the spread nozzle. COPYRIGHT KIPO 2017 A nozzle with a nozzle arm and said bottom nozzle mounted injection nozzle part; number 1 and number 2 number 1 number 2 receiving a chemical tank receiving chemical chemical tank has chemical, chemical liquid to the chemical liquid nozzle for supplying coolant to said said number 1 chemical and said number 2; and said nozzle section has an external appearance, chemical and chemical processing fluid comprising mixing member ejecting said number 1 and mixing said number 2, said mixing unit includes said chemical supply from the number 1 continuously flows and is chemical and chemical mixing said number 2 (with in-line) mixer and said inline mixing pipe including said inline others leading nozzle characterized chemical supply device. According to Claim 1, said length of time said number 1 to number under public affairs inline mixer and said number 2 chemical react chemical piping configured to increase the length including elongate piping solution supply device characterized. According to Claim 2, characterized in that said solution supply device having an elongated type piping in a spiral. According to Claim 1, inline mixer said number 1 and the flow of said turbulence-inducing member including said number 2 chemical chemical solution supply device characterized by generating turbulence. According to Claim 1, mounted in the mixing section that heats a fluid flowing in said mixing section including heating said solution supply device characterized. According to Claim 1, said number 1 received chemical tank temperature of higher than the temperature at said number 2 received said number 2 number 1 chemical chemical tank to the chemical liquid chemical characterized by a device. According to Claim 6, said number 1 chemical comprises phosphoric acid, sulfuric acid or combinations thereof which includes either a, said number 2 (fluorine) based etching solution supply device characterized by including a number sides have the polyarylene ether sulfone. According to Claim 7, said number 2 and number including at least one of the Si-based chemical said number 1 characterized added a chemical solution supply device. A nozzle with a nozzle arm and said bottom nozzle mounted injection nozzle part; number 1 and number 2 for supplying coolant to said chemical chemical to the chemical liquid nozzle; said nozzle section has an external appearance, said number 2 chemical and chemical processing fluid outflow to said number 1 and mixing the mixing member; and said injection nozzle and opposite the substrate onto the substrate support including a base comprising, said mixing unit includes said chemical supply from the number 1 continuously flows and is chemical and chemical mixing said number 2 (with in-line) mixer and said inline mixing nozzle and said inline others leading to the gas injection lances, said number 1 chemical comprises phosphoric acid, sulfuric acid or combinations thereof which either, said number 2 and number sides have the polyarylene ether sulfone-based etching, said number 2 and number including at least one of the Si-based chemical said number 1 characterized a chemical addition of semiconductor processing device. According to Claim 9, said substrate is, facing the processing in said injection nozzle, at least a portion exposed silicon nitride exposed silicon oxide layer in a semiconductor processing device having at least a portion characterized.