SPUTTERING DEVICE AND SPUTTERING METHOD
The disclosure includes a sputtering device relates to search, and sputtering method using a sputtering device number is provided plasma techniques are disclosed. The first and sputtering device number in the field tank carries an aluminium (Al), copper (Cu) metal such as potassium sulfate is coming in now. Indium tin oxide (ITO) transparent electrode and cookies, such as thin film sputtering device is used transparent amorphous oxide semiconductor (TAOS: Transparent Amorphous Oxide Semiconductor) number etc. even bath. Sputtering (physical vapor deposition, PVD) physical vapor deposition of a digital analog converter, vaporizing the target material with an external energy source vaporized target material on a substrate by physical changes in gas phase to solid phase layer formed on a base. Sputtering device target plasma between the substrate and the like to ionized argon gas heating unit substrate. The disclosure is when sputtering film formation, film quality degradation due to damage and billion number, even film uniformity and quality stability the sputtering device for sputtering device and sputtering method are disclosed. In the embodiment according to sputtering device of the present invention and one chamber, a substrate chamber so as to position a substrate on one side of the placing part, the other side of the chamber and target to the first substrate provided for target the placing part, an end portion of the target substrate comprises placing part arranged between the bipolar (bipolar) filter. Bipolar filter amount (+) voltage is applied and a plurality of divided, negative (-) voltage is applied to each of a plurality of divided and comprises a plurality of cathode ray and disposed. In order to target a substrate can be located closer to an end portion of the bipolar filter. A plurality of domes can be divided and a plurality of cathode ray is alternately one. A plurality of bipolar filter divided and supporting a pair of support and plurality of cathode ray can be. A pair of support one of a plurality of divided and insulated from a support, a plurality of cathode ray can be isolated from the other one support. Sputtering device arranged between the substrate placing part bipolar filter further comprises a filter can be a unipolar (mono-a polar). Negative (-) voltage is applied unipolar filter comprising a plurality of auxiliary cathode can be. Stripe pattern can be formed either unipolar filter mesh pattern. Sputtering target is installed at one side of a portion facing bipolar filter device further comprises a filter can be ground. Ground filter comprises a plurality of ground lines. Ground filter mesh pattern can be formed either stripe pattern. A plurality of divided, plurality of cathode ray, and a plurality of auxiliary cathode ray, and a plurality of ground lines is allowed to width can be formed. And Image divided interval, and a plurality of auxiliary cathode ray interval, and a plurality of earth interval thereof can assigns the same. Target in a direction opposite movement unit moves divided and auxiliary cathode ray and ground line can be positioned in line with the, cathode ray and auxiliary cathode ray and ground line can be positioned in line with the. Bipolar filter spacings can be unipolar filter and ground filter and maintain. In the embodiment according to another chamber and sputtering device of the present invention, a substrate chamber so as to position a substrate on one side of the placing part, the other side of the chamber and target to the first substrate provided for target the placing part, a portion toward the end surface of the target substrate placed positive (+) direction is installed on one side and the negative (-) potential (bipolar) filter and maintaining the bipolar alternating potential, the placing part bipolar filter welding robots are controlled (-) negative substrate potential (mono-a polar) filter and a unipolar, bipolar filter installed on one side of ground potential toward target coordinate ground filter substrate. In the embodiment according to the sputtering method of the present invention one, and multiple ion filter shape and target substrates inside chamber, the inner wall of discharge gas after injecting, formed in target sputtering on a substrate rotated together with moving toward a substrate using ion-exchange filter applying a blocking number one potential oxygen anions comprising the following steps. Ion-exchange filter, target substrate between a substrate located closer to a target (bipolar) filter the bipolar, unipolar (mono-a polar) filter arranged between the bipolar filter substrate can be. Bipolar filter and a plurality of divided, each comprising a plurality of divided and a plurality of cathode ray and disposed can be. The plurality of divided voltage can be applied to the amount of (+) and several hundred volts, hundreds volts or more negative (-) voltage is applied to the plurality of cathode ray be. Unipolar filter comprising a plurality of auxiliary cathode can be, several hundred volts or more negative (-) voltage is applied and a plurality of auxiliary cathode rays be. Ion-exchange filter towards a target can be ground on one side of bipolar filter further comprises a filter. Sputtering device using multiple ion filter oxygen anions and cations argon oxygen anions as well as high-speed by applying the potential number did not reaching the substrate or membrane can be cation of liquefied argon blocking. The damage of a thin film can be minimize forming film quality. Large ion-exchange filter water into the difficulties, with the sputtering device can have a sputtering device is a large-area substrate, film can be uniformity and quality stability. Figure 1 shows a schematic diagram of the device of the present invention also one in the embodiment according to sputtering are disclosed. Figure 2 shows a side view of the filter as shown in the sputtering device 1 also also during polyions, divided in three filter-gate. In the embodiment shown in the sputtering device 1 may also Figure 3 shows a side view of multiple ion filter as indicating other, divided in three filter-gate. Also shown in the sputtering device 1 also in Figure 4 shows a field simulation show the oxygen anions are disclosed. Also shown in the sputtering device 1 also in Figure 5 shows a field simulation show the argon cation are disclosed. Figure 6 shows a sputtering method in the embodiment according to one of the present invention also indicating order disclosed. Hereinafter, with reference to a drawing of the present invention in the embodiment for the present invention in the preface is provided to the person with skill in the art for detailed embodiment is hereinafter to 2000. The present invention refers to several different taught herein can be embodied in the form of a in the embodiment is not limited to. Specification in an entire layer, film, region, such as plate parts which are "on" when another area of said conduit when it "directly on" as well as to other parts of intermediate when comprises a unit. And "- on" means that the subject located above or below the multi-of which, which means that the gravity must be positioned on the upper side with reference to the direction does not. The entire specification of any component "comprising" a particularly when any portion that the opposite substrate can include other components without further means that the substrate. The size of the descriptions appearing in the drawing template for facilitating the arbitrarily revealing the thickness and the like, the present invention refers to just shown is not limited. Figure 1 shows a schematic diagram of the device of the present invention also one in the embodiment according to sputtering are disclosed. With reference to the 1 also, sputtering device (100) the chamber (10) on, chamber (10) composed of area between the (21) on, chamber (10) of the target side from a portion (31) on, an end portion of the substrate (21) on an end portion of the target (31) disposed between the ion-exchange filter (40) having a predetermined wavelength. Chamber (10) is connected with a vacuum pump (not shown) exhaust port (11) and mass flowmeter (not shown) which is connected to a gas inlet port (12) is formed. Chamber (10) holds the inside of vacuum in the exhaust vacuum pump. Vacuum exhaust chamber (10) gas into the inlet port (12) discharge through a apart from each other. The discharge gas comprising argon (Ar) can be. Substrate (20) substrate loading unit (21) by chamber (10) is fixed to, target (30) target loading unit (31) by chamber (10) secured to. Substrate (20) target (30) facing the other. An end portion of the substrate (21) can be on a high voltage, target (30) target loading unit (31) includes a power source portion (32) is connected thereto. The power supply (32) includes a direct current (DC) power may be, target (30) can be used when the high-frequency power is non-conducting. Target loading unit (31) includes a target (30) transmitting power, the target is cooled by coolant flow not shown (30) to be cooled 22a.. Target (30) with sound (-) voltage (e.g., a negative voltage of several hundred bolt) is applied. The substrate (20) target (30) each cathode to anode (anode) 4. (cathode). Target (30) a negative (-) voltage is applied across the target (30) to about electrons emitted from photoresist pattern through the argon gas. Herein emit electrons while argon and substrate (20) target (30) between the glow-discharge plasma (80) is generated. Plasma (80) in argon cation (Ar+ ) Is a potential difference by graphite (30) accelerated towards the target (30) impinging surface, the shock energy by graphite (30) material evaporated substrate. A target impact energy by impingement of the particles (30) material is greater than the target thermal energy needed to evaporate almost 4 times (30) material evaporated substrate. Such targets (30) evaporation of chemical, physical momentum exchange process not thermal process since substantially all target material (30) can be used. The evaporated target (30) performed on the substrate (20) is attached to the layer formed on a base. An end portion of the target (31) on the outside of the magnetron (33) can be provided. Target (30) surface emitted electrons are the electric field and the magnetron (33) by an exercise or spiral shape and the magnetic field of the claw id, magnetic field trapped magnetic field exit difficult of vehicle from the outside. The plasma (80) of electronic plot, ionization is accelerated deposition efficiency substrate. Magnetron (33) shielding the S, S pole N surrounding south combustion chamber. Substrate (20) the membrane to the target (30) in accordance with the kind aluminum (Al), copper (Cu) film may be a metal, such as indium tin oxide (ITO) transparent conductive film reflector, such as thin film be a transparent amorphous oxide semiconductor (TAOS: Transparent Amorphous Oxide Semiconductor). Oxide semiconductor include InGaZnO, InGaO, InSnZnO, ZnON and like known. Chamber (10) a cooler exhaust receives predetermined oxygen is left thereof can. In this case sputtering target in (30) and surface oxygen generating anions, oxygen anion is target (30) is pushed up by a voltage high speed substrate (20) can be impinging on or membrane. Oxygen anion membranes by scratching the film quality speed is lowered. Furthermore substrate (20) including oxide semiconductor film when formed, by oxygen negative ion oxide semiconductor film is lowered mobility can be. And the phenomenon oxide semiconductor layer TFT heat resisting synthetic resin substrate. In addition, a portion of the substrate in sputtering argon cation (20) or membrane can be performed by impinging on the film. High density positive ions are argon, approximately 0 to hundreds electronic bolt (eV) have a broad energy distribution. The substrate (20) or membrane allows high speed oxygen anions as well as argon cations simultaneously blocking accomplishing. Multiple ion filter (40) of the substrate (20) target (30) between the target (30) a substrate (20) is located closer to the, argon and oxygen anions is applied potential for cations that they did not number substrate (20) or membrane used for up so as not to reach. Multiple ion filter (40) is bipolar (bipolar) filter (50) having a predetermined wavelength. Multiple ion filter (40) of the substrate (20) and bipolar filter (50) disposed between the unipolar (mono-a polar) filter (60) can be further comprises. Multiple ion filter (40) includes a target (30) facing bipolar filter (50) is arranged at one side of ground filter (70) can be further comprises. For example, ion-exchange filter (40) on a high voltage filter (70) on the bipolar filter (50) and unipolar filter (60) can be made of 3 layer structure. Ground filter (70) substrate (20) is positioned furthest from and, unipolar filter (60) substrate (20) that most closely located, bipolar filter (50) ground filter (70) on the unipolar filter (60) positioned between the other. Ground filter (70) comprises a plurality of ground lines (71) connected to the chamber. Plurality of ground line (71) where the metal wire or metal strip and the like, substrate (20) to the length of the side face of each other along a direction between side-by-side direction number 1 disposed thereon. Ground filter (70) includes a ground shield acts as an potential used for a function for stabilizing. Bipolar filter (50) not only a positive (+) voltage is applied a plurality of divided (51) and, negative (-) voltage is applied to the plurality of divided (51) and disposed each of a plurality of cathode ray (52) comprises. A plurality of divided (51) and a plurality of cathode ray (52) where the metal wire or metal strip and the like, can be disposed one direction alternately repeated number 1. A plurality of divided (51) and is e.g. + 1 kv voltage can be applied to the, plurality of cathode ray (52) is e.g. -1 kv voltage can be applied to the disclosed. In this case divided (51) and Image (52) the potential difference between the 2 kv is under or over. Bipolar filter (50) of the substrate (20) to move towards and to argon cations, oxygen anion up 1 used for the difference. Strong plasma (80) a portion of the argon cation jetted from the target (30) not substrate (20) and to move towards a, target (30) an oxygen anion is target surface (30) is pushed up by a voltage high speed substrate (20) to move towards a substrate. Substrate (20) to move towards a positive ions are argon divided (51) is pushed a potential of the changed path, cathode ray (52) the energy impinging on the substrate. Similarly substrate (20) to move towards oxygen anion is cathode ray (52) to be pushed and potential of is supplied smoothly, divided (51) the energy impinging on the substrate. Only, high speed oxygen anion moves some of the oxygen anion is bipolar filter (50) can be passed through. Unipolar filter (60) is negative (-) voltage is applied and a plurality of auxiliary cathode ray (61) connected to the chamber. A plurality of auxiliary cathode ray (61) where the metal wire or metal strip and the like, disposed thereon at a distance between each other along a direction number 1. Unipolar filter (60) includes a noise filter (50) used for the casing 2 up through the oxygen anion. A plurality of auxiliary cathode ray (61) is e.g. -1 kv voltage can be applied to the disclosed. Bipolar filter (50) oxygen anions through the auxiliary cathode ray (61) potential is supplied smoothly and able to be pushed, bipolar filter (50) of divided (51) while energy impinging on the substrate. Plurality of ground line (71), a plurality of divided (51), plurality of cathode ray (52), and a plurality of auxiliary cathode ray (61) is allowed to width can be formed. For example, plurality of ground line (71), a plurality of divided (51), plurality of cathode ray (52), and a plurality of auxiliary cathode ray (61) each width (wire diameter in a case of) approximately 1 mm hereinafter implementation being. Plurality of ground line (71) interval, divided (51) and Image (52) intervals, and a plurality of auxiliary cathode ray (61) thereof can both the distance of. For example, plurality of ground line (71) interval, divided (51) and Image (52) intervals, and a plurality of auxiliary cathode ray (61) the interval of the implementation being 10 mm approximately. Substrate (20) target (30) along sides and number 2 ground line (71) and divided (51) and auxiliary cathode ray (61) may be positioned in a row and, ground line (71) and Image (52) and auxiliary cathode ray (61) can be positioned in a row. On the other hand, divided (51) and Image (52) and a ground line (71) and auxiliary cathode ray (61) may be positioned along a direction shift number 1 for disapproval. Number 2 direction according to ground filter (70) on the bipolar filter (50) interval, and bipolar filter (50) on the unipolar filter (60) such as the interval of the thereof can. For example, ground filter (70) on the bipolar filter (50) interval, and bipolar filter (50) on the unipolar filter (60) the distance of approximately 20 mm implementation being. Figure 2 shows a side view of the filter as shown in the sputtering device 1 also also during polyions, divided in three filter-gate. The reference 2 also, ground filter (70) comprises a plurality of ground lines (71) support supporting a pair of number 1 (72) can be a. Plurality of ground line (71) is applied a specified tension circuit is number 1 support both ends (72) can be fixed, number 1 support (72) external ground power source through electrically connected thereto. Bipolar filter (50) comprises a plurality of divided (51) and a plurality of cathode ray (52) supporting a pair of number 2 support (53, 54) can be a. A plurality of divided (51) and a plurality of cathode ray (52) is applied a specified tension circuit is number 2 support both ends (53, 54) can be fixed. A pair of support (53, 54) one of support (53) comprises a plurality of divided (51) insulated from a, plurality of cathode ray (52) and electrically connected to the plurality of cathode ray (52) applies the voltage to the negative (-). A pair of support (53, 54) of the other of the support (54) includes a plurality of cathode ray (52) insulated from, a plurality of divided (51) and electrically connected to one of the plurality of divided (51) applies a first voltage in positive (+). In Figure 2 code 55 is exhibits insulator. Unipolar filter (60) comprises a plurality of auxiliary cathode ray (61) supporting a pair of number 3 support (62) can be a. A plurality of auxiliary cathode ray (61) is applied a specified tension circuit is long number 3 support (62) can be fixed, number 3 support (62) through power supply pressure during brushing. In the embodiment shown in the sputtering device 1 may also Figure 3 shows a side view of multiple ion filter as indicating other, divided in three filter-gate. Also with reference to the 3, the grounded at filter in the embodiment (70a) on unipolar filter (60a) includes a mesh (mesh) structure consisting of an. Ground filter (70a) between a plurality of number 1 arranged side by side at a distance to each ground line (73) and, a plurality of ground line number 1 (73) arranged side by side and a plurality of number 2 intersect each other distance between ground line (74) and, a plurality of number 1 and number 2 ground line (73, 74) a frame-shaped supporting number 1 support (75) can be a. Unipolar filter (60a) arranged side by side at a distance between each other a plurality of number 1 auxiliary cathode ray (63) and, a plurality of number 1 auxiliary cathode ray (63) arranged side by side at a distance between each other while crossing a plurality of number 2 auxiliary cathode ray (64) and, a plurality of number 1 and number 2 auxiliary cathode ray (63, 64) a frame-shaped supporting number 3 support (65) can be a. A plurality of number 1 and number 2 ground line (73, 74) and a plurality of number 1 and number 2 auxiliary cathode ray (63, 64) be constructed in metal wire or metal strip and the like. A plurality of number 1 and number 2 ground line (73, 74) is applied a specified tension circuit is number 1 support both ends (75) can be fixed. A plurality of number 1 and number 2 auxiliary cathode ray (63, 64) is applied a specified tension circuit is long number 3 support (65) can be fixed. Mesh structure of unipolar filter (60a) has an enlarged surface area of the dense date unipolar filter contrast filter, oxygen anions can be field height. Similarly mesh structure ground filter (70a) in addition an enlarged surface area of the dense ground filter contrast date filter, potential stabilizing effect can be. Also shown in the sputtering device 1 also in Figure 4 shows a field simulation show the oxygen anions are disclosed. Simulation voltage conditions shown in table 1 below efined. Hereinafter, with reference to a drawing of the present invention in the embodiment for the present invention in the preface is provided to the person with skill in the art for detailed embodiment is hereinafter to 2000. The present invention refers to several different taught herein can be embodied in the form of a in the embodiment is not limited to. Specification in an entire layer, film, region, such as plate parts which are "on" when another area of said conduit when it "directly on" as well as to other parts of intermediate when comprises a unit. And "- on" means that the subject located above or below the multi-of which, which means that the gravity must be positioned on the upper side with reference to the direction does not. The entire specification of any component "comprising" a particularly when any portion that the opposite substrate can include other components without further means that the substrate. The size of the descriptions appearing in the drawing template for facilitating the arbitrarily revealing the thickness and the like, the present invention refers to just shown is not limited. Figure 1 shows a schematic diagram of the device of the present invention also one in the embodiment according to sputtering are disclosed. With reference to the 1 also, sputtering device (100) the chamber (10) on, chamber (10) composed of area between the (21) on, chamber (10) of the target side from a portion (31) on, an end portion of the substrate (21) on an end portion of the target (31) disposed between the ion-exchange filter (40) having a predetermined wavelength. Chamber (10) is connected with a vacuum pump (not shown) exhaust port (11) and mass flowmeter (not shown) which is connected to a gas inlet port (12) is formed. Chamber (10) holds the inside of vacuum in the exhaust vacuum pump. Vacuum exhaust chamber (10) gas into the inlet port (12) discharge through a apart from each other. The discharge gas comprising argon (Ar) can be. Substrate (20) substrate loading unit (21) by chamber (10) is fixed to, target (30) target loading unit (31) by chamber (10) secured to. Substrate (20) target (30) facing the other. An end portion of the substrate (21) can be on a high voltage, target (30) target loading unit (31) includes a power source portion (32) is connected thereto. The power supply (32) includes a direct current (DC) power may be, target (30) can be used when the high-frequency power is non-conducting. Target loading unit (31) includes a target (30) transmitting power, the target is cooled by coolant flow not shown (30) to be cooled 22a.. Target (30) with sound (-) voltage (e.g., a negative voltage of several hundred bolt) is applied. The substrate (20) target (30) each cathode to anode (anode) 4. (cathode). Target (30) a negative (-) voltage is applied across the target (30) to about electrons emitted from photoresist pattern through the argon gas. Herein emit electrons while argon and substrate (20) target (30) between the glow-discharge plasma (80) is generated. Plasma (80) in argon cation (Ar+ ) Is a potential difference by graphite (30) accelerated towards the target (30) impinging surface, the shock energy by graphite (30) material evaporated substrate. A target impact energy by impingement of the particles (30) material is greater than the target thermal energy needed to evaporate almost 4 times (30) material evaporated substrate. Such targets (30) evaporation of chemical, physical momentum exchange process not thermal process since substantially all target material (30) can be used. The evaporated target (30) performed on the substrate (20) is attached to the layer formed on a base. An end portion of the target (31) on the outside of the magnetron (33) can be provided. Target (30) surface emitted electrons are the electric field and the magnetron (33) by an exercise or spiral shape and the magnetic field of the claw id, magnetic field trapped magnetic field exit difficult of vehicle from the outside. The plasma (80) of electronic plot, ionization is accelerated deposition efficiency substrate. Magnetron (33) shielding the S, S pole N surrounding south combustion chamber. Substrate (20) the membrane to the target (30) in accordance with the kind aluminum (Al), copper (Cu) film may be a metal, such as indium tin oxide (ITO) transparent conductive film reflector, such as thin film be a transparent amorphous oxide semiconductor (TAOS: Transparent Amorphous Oxide Semiconductor). Oxide semiconductor include InGaZnO, InGaO, InSnZnO, ZnON and like known. Chamber (10) a cooler exhaust receives predetermined oxygen is left thereof can. In this case sputtering target in (30) and surface oxygen generating anions, oxygen anion is target (30) is pushed up by a voltage high speed substrate (20) can be impinging on or membrane. Oxygen anion membranes by scratching the film quality speed is lowered. Furthermore substrate (20) including oxide semiconductor film when formed, by oxygen negative ion oxide semiconductor film is lowered mobility can be. And the phenomenon oxide semiconductor layer TFT heat resisting synthetic resin substrate. In addition, a portion of the substrate in sputtering argon cation (20) or membrane can be performed by impinging on the film. High density positive ions are argon, approximately 0 to hundreds electronic bolt (eV) have a broad energy distribution. The substrate (20) or membrane allows high speed oxygen anions as well as argon cations simultaneously blocking accomplishing. Multiple ion filter (40) of the substrate (20) target (30) between the target (30) a substrate (20) is located closer to the, argon and oxygen anions is applied potential for cations that they did not number substrate (20) or membrane used for up so as not to reach. Multiple ion filter (40) is bipolar (bipolar) filter (50) having a predetermined wavelength. Multiple ion filter (40) of the substrate (20) and bipolar filter (50) disposed between the unipolar (mono-a polar) filter (60) can be further comprises. Multiple ion filter (40) includes a target (30) facing bipolar filter (50) is arranged at one side of ground filter (70) can be further comprises. For example, ion-exchange filter (40) on a high voltage filter (70) on the bipolar filter (50) and unipolar filter (60) can be made of 3 layer structure. Ground filter (70) substrate (20) is positioned furthest from and, unipolar filter (60) substrate (20) that most closely located, bipolar filter (50) ground filter (70) on the unipolar filter (60) positioned between the other. Ground filter (70) comprises a plurality of ground lines (71) connected to the chamber. Plurality of ground line (71) where the metal wire or metal strip and the like, substrate (20) to the length of the side face of each other along a direction between side-by-side direction number 1 disposed thereon. Ground filter (70) includes a ground shield acts as an potential used for a function for stabilizing. Bipolar filter (50) not only a positive (+) voltage is applied a plurality of divided (51) and, negative (-) voltage is applied to the plurality of divided (51) and disposed each of a plurality of cathode ray (52) comprises. A plurality of divided (51) and a plurality of cathode ray (52) where the metal wire or metal strip and the like, can be disposed one direction alternately repeated number 1. A plurality of divided (51) and is e.g. + 1 kv voltage can be applied to the, plurality of cathode ray (52) is e.g. -1 kv voltage can be applied to the disclosed. In this case divided (51) and Image (52) the potential difference between the 2 kv is under or over. Bipolar filter (50) of the substrate (20) to move towards and to argon cations, oxygen anion up 1 used for the difference. Strong plasma (80) a portion of the argon cation jetted from the target (30) not substrate (20) and to move towards a, target (30) an oxygen anion is target surface (30) is pushed up by a voltage high speed substrate (20) to move towards a substrate. Substrate (20) to move towards a positive ions are argon divided (51) is pushed a potential of the changed path, cathode ray (52) the energy impinging on the substrate. Similarly substrate (20) to move towards oxygen anion is cathode ray (52) to be pushed and potential of is supplied smoothly, divided (51) the energy impinging on the substrate. Only, high speed oxygen anion moves some of the oxygen anion is bipolar filter (50) can be passed through. Unipolar filter (60) is negative (-) voltage is applied and a plurality of auxiliary cathode ray (61) connected to the chamber. A plurality of auxiliary cathode ray (61) where the metal wire or metal strip and the like, disposed thereon at a distance between each other along a direction number 1. Unipolar filter (60) includes a noise filter (50) used for the casing 2 up through the oxygen anion. A plurality of auxiliary cathode ray (61) is e.g. -1 kv voltage can be applied to the disclosed. Bipolar filter (50) oxygen anions through the auxiliary cathode ray (61) potential is supplied smoothly and able to be pushed, bipolar filter (50) of divided (51) while energy impinging on the substrate. Plurality of ground line (71), a plurality of divided (51), plurality of cathode ray (52), and a plurality of auxiliary cathode ray (61) is allowed to width can be formed. For example, plurality of ground line (71), a plurality of divided (51), plurality of cathode ray (52), and a plurality of auxiliary cathode ray (61) each width (wire diameter in a case of) approximately 1 mm hereinafter implementation being. Plurality of ground line (71) interval, divided (51) and Image (52) intervals, and a plurality of auxiliary cathode ray (61) thereof can both the distance of. For example, plurality of ground line (71) interval, divided (51) and Image (52) intervals, and a plurality of auxiliary cathode ray (61) the interval of the implementation being 10 mm approximately. Substrate (20) target (30) along sides and number 2 ground line (71) and divided (51) and auxiliary cathode ray (61) may be positioned in a row and, ground line (71) and Image (52) and auxiliary cathode ray (61) can be positioned in a row. On the other hand, divided (51) and Image (52) and a ground line (71) and auxiliary cathode ray (61) may be positioned along a direction shift number 1 for disapproval. Number 2 direction according to ground filter (70) on the bipolar filter (50) interval, and bipolar filter (50) on the unipolar filter (60) such as the interval of the thereof can. For example, ground filter (70) on the bipolar filter (50) interval, and bipolar filter (50) on the unipolar filter (60) the distance of approximately 20 mm implementation being. Figure 2 shows a side view of the filter as shown in the sputtering device 1 also also during polyions, divided in three filter-gate. The reference 2 also, ground filter (70) comprises a plurality of ground lines (71) support supporting a pair of number 1 (72) can be a. Plurality of ground line (71) is applied a specified tension circuit is number 1 support both ends (72) can be fixed, number 1 support (72) external ground power source through electrically connected thereto. Bipolar filter (50) comprises a plurality of divided (51) and a plurality of cathode ray (52) supporting a pair of number 2 support (53, 54) can be a. A plurality of divided (51) and a plurality of cathode ray (52) is applied a specified tension circuit is number 2 support both ends (53, 54) can be fixed. A pair of support (53, 54) one of support (53) comprises a plurality of divided (51) insulated from a, plurality of cathode ray (52) and electrically connected to the plurality of cathode ray (52) applies the voltage to the negative (-). A pair of support (53, 54) of the other of the support (54) includes a plurality of cathode ray (52) insulated from, a plurality of divided (51) and electrically connected to one of the plurality of divided (51) applies a first voltage in positive (+). In Figure 2 code 55 is exhibits insulator. Unipolar filter (60) comprises a plurality of auxiliary cathode ray (61) supporting a pair of number 3 support (62) can be a. A plurality of auxiliary cathode ray (61) is applied a specified tension circuit is long number 3 support (62) can be fixed, number 3 support (62) through power supply pressure during brushing. In the embodiment shown in the sputtering device 1 may also Figure 3 shows a side view of multiple ion filter as indicating other, divided in three filter-gate. Also with reference to the 3, the grounded at filter in the embodiment (70a) on unipolar filter (60a) includes a mesh (mesh) structure consisting of an. Ground filter (70a) between a plurality of number 1 arranged side by side at a distance to each ground line (73) and, a plurality of ground line number 1 (73) arranged side by side and a plurality of number 2 intersect each other distance between ground line (74) and, a plurality of number 1 and number 2 ground line (73, 74) a frame-shaped supporting number 1 support (75) can be a. Unipolar filter (60a) arranged side by side at a distance between each other a plurality of number 1 auxiliary cathode ray (63) and, a plurality of number 1 auxiliary cathode ray (63) arranged side by side at a distance between each other while crossing a plurality of number 2 auxiliary cathode ray (64) and, a plurality of number 1 and number 2 auxiliary cathode ray (63, 64) a frame-shaped supporting number 3 support (65) can be a. A plurality of number 1 and number 2 ground line (73, 74) and a plurality of number 1 and number 2 auxiliary cathode ray (63, 64) be constructed in metal wire or metal strip and the like. A plurality of number 1 and number 2 ground line (73, 74) is applied a specified tension circuit is number 1 support both ends (75) can be fixed. A plurality of number 1 and number 2 auxiliary cathode ray (63, 64) is applied a specified tension circuit is long number 3 support (65) can be fixed. Mesh structure of unipolar filter (60a) has an enlarged surface area of the dense date unipolar filter contrast filter, oxygen anions can be field height. Similarly mesh structure ground filter (70a) in addition an enlarged surface area of the dense ground filter contrast date filter, potential stabilizing effect can be. Also shown in the sputtering device 1 also in Figure 4 shows a field simulation show the oxygen anions are disclosed. Simulation voltage conditions shown in table 1 below efined. The reference also 4, red, yellow, [...], sky blue, and blue order of density of oxygen and proportional to the other. Target (Target) and multiple ion filter (40) to the aforementioned size applying conditions, most of the oxygen anion is ion-exchange filter (40) on target between to the lungs. The low-density oxygen anion bipolar filter (50) but through a unipolar filter (60) can be sure that the does not extend. Also shown in the sputtering device 1 also in Figure 5 shows a field simulation show the argon cation are disclosed. Aforementioned tables 1 and voltage conditions simulation are the same. The reference also 5, red, yellow, [...], sky blue, and blue order of density of argon and proportional to the other. Target (Target) and multiple ion filter (40) to the aforementioned size applying conditions, and argon cations are present that are located around the target, target is placed proximate to a high-density argon cation can verify. On simulation result from you will also 4 of Figure 5, in the embodiment the sputtering of device (100) includes the aforementioned ion-exchange filter (40) forward of argon as well as oxygen anion cation substrate (20) or membrane reaching can be blocking. The damage of a thin film can be minimize forming film quality. In addition, the aforementioned ion-exchange filter (40) to be applied to the sputtering device for large speed data not hereinafter can be. I.e., the sputtering device in the embodiment (100) is a large-area substrate (20) can have with the sputtering device, film can be uniformity and quality stability. Figure 6 shows a sputtering method in the embodiment according to one of the present invention also indicating order disclosed. With reference to the 6 also, sputtering method for preparing step (S10) target and multiple ion filter chamber are arranged on number 1, number 2 step (S20) for injecting gas discharge then a cooler on exhaust, to form on a substrate by sputtering ions to a substrate using ion-exchange filter introduction step (S30) number 3 without using a tool. Also with reference to the 6 and also 1, number 1 target in step (S10) (30) metal, metal oxide or oxide semiconductor or the like is small number, target loading unit (31) being powered by the part (32) coupled with each other. The power supply (32) is can be a DC power. Multiple ion filter (40) of the substrate (20) target (30) between the substrate (20) closer to the lungs. Multiple ion filter (40) includes a noise filter (50) having a predetermined wavelength. Multiple ion filter (40) of the substrate (20) and bipolar filter (50) positioned between the unipolar filter (60) can be further comprises. Multiple ion filter (40) includes a target (30) facing bipolar filter (50) on one side of a ground filter (70) can be further comprises. Bipolar filter (50) comprises a plurality of divided (51) and, a plurality of divided (51) and disposed each of a plurality of cathode ray (52) comprises. Unipolar filter (60) comprises a plurality of auxiliary cathode ray (61) which, ground filter (70) comprises a plurality of ground lines (71) comprises. Unipolar filter (60) and the ground filter (70) includes a stripe pattern or mesh pattern can be made. Number 2 in step (S20), chamber (10) interior vacuum chamber and is exhausted, discharge gas, e.g. argon gas chamber (10) to apart from each other. In step number 3 (S30), substrate (20) a substrate supporting an end portion (21) on a high voltage and, target (30) electrical power source (32) negative (-) from approximately hundreds bolt to the data lines. Then target (30) around the glow-discharge plasma (80) is generated, argon cation target (30) the surface target (30) material evaporated substrate. The evaporated target (30) performed on the substrate (20) is attached to the layer formed on a base. In target film (30) subjected to high oxygen anion on the surface of the substrate (20) and to move towards, cation argon fraction substrate (20) to move towards a substrate. Multiple ion filter (40) receives the high potential is applied to the number of oxygen anions as well as argon argon oxygen anions and cations for cations did not blocking oxide layer. In step number 3 (S30), bipolar filter (50) for plural ones of the divided (51) amount is hundreds volts (+) voltage is applied, plurality of cathode ray (52) is negative (-) voltage is applied to the several hundred volts. Unipolar filter (60) is negative (-) voltage of several hundred volts is applied, ground filter (70) is to ground. Ground filter (70) includes a ground shield acts as an potential used for a function for stabilizing. Substrate (20) supplies the high movement of the oxygen anion is bipolar filter (50) during cathode ray (52) to be pushed and potential of is supplied smoothly, divided (51) the energy impinging on the substrate. A wide energy distribution high density argon cations are present bipolar filter (50) divided in (51) is pushed a potential of the changed path, cathode ray (52) the energy impinging on the substrate. The oxygen anion part of bipolar filter (50) can be through, bipolar filter (50) through the oxygen anion is unipolar filter (60) auxiliary cathode ray (61) potential is supplied smoothly and pushed, bipolar filter (50) divided of (51) to energy impinging on the substrate. As a result oxygen anion is bipolar filter (50) on the unipolar filter (60) and the energy thereof by the action of double filter both loss as follows. According to the aforementioned sputtering method, substrate (20) or membrane oxygen argon cation collision does not come with a polyanion, minimizing damage of a thin film can be quality forming film. In addition, substrate (20) is additionally formed in this oxide semiconductor when including, oxygen negative ion oxide semiconductor film can be also the number billion, oxide semiconductor layer improves the characteristic of the thin film transistor can be. In said of the present invention preferred embodiment is described but, on of the drawings and detailed description of the invention is not limited to claim the present invention refers to the preface is elastically deformed and in addition of the present invention variously in the range and the range of possible embodiment of course have disclosed. 10: chamber 20: substrate 21: an end portion of the substrate 30: target 31: an end portion of the target 32: power 40: ion-exchange filter 50: bipolar filter 51: divided 52: cathode ray 60: unipolar filter 61: auxiliary cathode ray 70: ground filter 71: ground line 80: plasma Disclosed are a sputtering device and a sputtering method. The sputtering device comprises: a chamber; a substrate mounting unit provided for a substrate to be placed on one side in the chamber; a target mounting unit placed on the other side in the chamber, and provided for a target to face the substrate; and a bipolar filter installed between a substrate mounting unit and the target mounting unit. The bipolar filter has a plurality of anode rays applied with positive voltage and a plurality of cathode rays applied with negative voltage, and arranged to be adjacent to each of the anode rays. According to the present invention, a decline in film quality caused by damage is able to be prevented. COPYRIGHT KIPO 2017 Chamber; a substrate loading unit so as to position a substrate on one side of said chamber; said chamber located on the other side of an end portion of the valve body to the first substrate said target target; and said end portion of said target substrate robots are controlled the placing part, and a plurality of divided amount (+) voltage is applied, negative (-) voltage is applied to said plurality of divided and each including a bipolar (bipolar) filter device including a plurality of cathode ray and disposed sputtering. According to Claim 1, said end portion of said bipolar filter than said target sputtering device positioned close further vertical movement. According to Claim 2, and said plurality of cathode ray is a sputtering device alternately one divided and said plurality of domes. According to Claim 3, said bipolar filter and said plurality of divided and supporting a pair of support wherein said plurality of cathode ray, said pair of support one of a plurality of divided and insulated from said support, said plurality of cathode ray isolated from the other support a sputtering device. According to Claim 2, said substrate placing part said bipolar filter welding robots are controlled, negative (-) voltage is applied including a sputtering device further including a plurality of auxiliary cathode unipolar (mono-a polar) filter. According to Claim 5, said unipolar filter mesh pattern includes one stripe pattern and a sputtering device. According to Claim 5, a portion facing said bipolar filter installed on one side of said target, including plurality of ground line ground filter further including sputtering device. According to Claim 7, said mesh pattern includes one ground filter stripe pattern and a sputtering device. According to Claim 7, said plurality of divided, said plurality of cathode ray, said plurality of auxiliary cathode ray, such as width and said plurality of ground line is formed, said divided and said cathode ray interval, said plurality of auxiliary cathode ray interval, and said plurality of earth interval is the same sputtering device. According to Claim 9, the placing part facing said target unit moves said substrate and said ground line is divided along said auxiliary cathode ray and said positioned in line, said sputtering device is positioned in line with the auxiliary cathode ray and said cathode ray and said ground line. According to Claim 9, said bipolar filter said unipolar filter and said spaced ground filter equal to a sputtering device. Chamber; a substrate loading unit so as to position a substrate on one side of said chamber; said chamber located on the other side of an end portion of the valve body to the first substrate said target target; said target placed facing a portion installed on one side of said substrate, said end surface of the positive (+) and the negative (-) direction (bipolar) filter the bipolar alternating potential maintaining potential; said substrate placing part said bipolar filter welding robots are controlled, negative (-) potential unipolar (mono-a polar) filter; and a portion facing said bipolar filter installed on one side of said target, ground potential ground filter including sputtering device. Target substrates inside chamber and multiple ion filter shape; said inner wall of discharge gas after injecting; and said sputtering target formed in said on a substrate rotated together with said ion-exchange filter moving toward said substrate potential oxygen anions including sputtering method involves forcing the number one. According to Claim 13, said ion-exchange filter, said substrate between said substrate and said target (bipolar) located closer to said target than the bipolar filter; and said substrate and said bipolar filter arranged between the unipolar (mono-a polar) filter including sputtering method. According to Claim 14, said bipolar filter and a plurality of divided, each of said plurality of divided and disposed a plurality of cathode ray which, hundreds volts (+) voltage is applied to said plurality of divided amount, hundreds volts or more negative (-) voltage is applied to said plurality of cathode ray sputtering method. According to Claim 14, said unipolar filter and a plurality of auxiliary cathode ray which, said several hundred volts or more negative (-) voltage is applied and a plurality of auxiliary cathode rays sputtering method. According to Claim 14, said bipolar filter on one side of said ion-exchange filter further including ground filter said towards a target sputtering method. Target voltage - 750V Bipolar filter Divided + 1 kv Cathode ray -1 kv Unipolar filter -1 kv
