PELLICLE FOR EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY AND MANUFACTURING METHOD THEREOF

In hereinafter, with reference to the drawing of the present invention in the embodiment described specifically but through the present invention, in the embodiment of the present invention is employed for the purposes of example and description only has meaning not limiting of the present invention claim in a number range for valve timing used are not correct. Thus, in the embodiment of the present invention if in the art 155.520 from various deformation and equally to the other in the embodiment is enabling will understand. The, scope of protection of the present invention is true given technical identity defined by claim will be.

Figure 1 shows a cross-sectional drawing shown and also of the present invention number 1 in the embodiment according to EUV photomask pellicle, the pellicle for photomask shown in Figure 2 of the present invention number 1 in the embodiment according to extreme upper plane are disclosed.

The reference also 1 and 2, according to an embodiment of the present invention EUV photomask pellicle (100) pole ultraviolet rays (not shown) the photomask is attached to the particle or outside contamination won for protecting a photomask from field could be bonded each other.

EUV photomask pellicle (100) is [pheyl the layer which will grow (106), [pheyl the layer which will grow (106) parallel strength reinforcing layer pattern (108a), [pheyl the layer which will grow (106) with the lower edge of the support layer pattern portion (104a) and a support layer pattern (104a) front surface of the frame layer (102a) comprises.

[Pheyl the layer which will grow (106) EUV photolithography process is available at 13. 5 Nm EUV transmittance of 80% or more and should have translucency to exposure wavelength, which results in high thermal energy for repeated exposure process is not varied having the thermally reliability to 10sup16. In addition, [pheyl the layer which will grow (106) during the injection process and gracefully number numerical control machine movement acceleration, vacuum environment of a range where the mechanical strength is also excellent in accomplishing pressure change with respect to an environment.

To this end, [pheyl the layer which will grow (106) relatively other entities transmittance better than single crystal silicon (c a-Si), silicon (Si) or carbon (C) to said polycrystalline silicon (p a-Si), including silicon (Si) compound consisting of one or more nitrogen (N).

[Pheyl the layer which will grow (106) has a thickness of 20 nm ∼ 60 nm is, pellicle (100) 40% ∼ 90% of the total thickness corresponding to has a thickness. [Pheyl the layer which will grow (106) having a thickness of 20 nm hereinafter when the, can be strength, to have a thickness of at least 60 nm, permeability of the exposure light is EUV applied significantly lower non-disclosed.

Strength reinforcing layer (108a) is [pheyl the layer which will grow (106) expose the surface of the plurality of nano-sized (Nano size) which has a hole (H) arranged in mesh (Mesh), [pheyl the layer which will grow (106) for protecting, [pheyl the layer which will grow (106) and pellicle (100) mechanical, thermal, reinforcing optical properties could be bonded each other.

To this end, the strength reinforcing layer (108a) mechanical, thermal and optical quality material, preferably, silicon carbide (SiC), silicon nitride (SiN), boron carbide (B₄ C), molybdenum (Mo), hafnium base year-old (Ru), zirconium (Zr) 1 during at least one substance and a fluorohydrocarbon.

Strength reinforcing layer (108a) is [pheyl the layer which will grow (106) and has a minimal impact on order, [pheyl the layer which will grow (106) preferably thinner thickness and higher transmittance. I.e., strength reinforcing layer (108a) is mounted on a (100) corresponding to 5% ∼ 30% of the total thickness and has a thickness which, preferably, has a thickness of 2 nm ∼ 10 nm, 13. 5 Nm EUV wavelength has a transmittance of at least 80% translucency to exposure.

Strength reinforcing layer (108a) (H) (H) (a) the hole diameter of said hole is larger than the separation between the optical properties (b) excellent disclosed. The, 20 nm ∼ 100 nm (a) diameter of the hole (H) and, preferably, has a diameter of 50 nm ∼ 75 nm (a), (b) having a hole (H) interval between 10 nm ∼ 80 nm, preferably, 30 nm ∼ 50 nm has a spacing (b).

Framing layer pattern (102a) is [pheyl the layer which will grow (106) is equipped at the lower edge of the, [pheyl the layer which will grow (106) which can support a the pellicle frame could be bonded each other. Framing layer pattern (102a) is, preferably, crystal directionally, doping density 10²⁰ Ions/cm² In silicon (Si) wafer form using hereinafter.

Framing layer pattern (102a) is [pheyl the layer which will grow (106) and a distance between the photomask is finished thickness is formed, preferably, 2 micro m ∼ 100 micro m in thickness.

Framing layer pattern (102a) is, although not shown, the top surface and extends to at least one of additional with can be, can be used as a pellicle frame with said structure.

Support layer pattern (104a) is [pheyl the layer which will grow (106) and framing layer pattern (102a) is equipped between, the strength reinforcing layer (108a) and fill up the [pheyl the layer which will grow from a surrounding environment (106) serves to reinforce the mechanical properties for protecting a plurality of hierarchies. With, support layer pattern (104a) frame layer pattern (102a) silicon (Si) to form the etched wafer, can be serves as an etch stop layer.

To this end, support layer pattern (104a) is mounted on a (100) of forming conditions (temperature, thin film stress or the like) constituting the other films must be deformed in relation free, translucency to exposure EUV optical, mechanical, thermally stable material must be, framing layer pattern (102a) and silicon (Si) wafer about the materials preferably consists of material etch selectivity. I.e., support layer pattern (104a) in order to satisfy the properties yes pin, silicon carbide (SiC), boron carbide (B₄ C), hafnium base year-old (Ru), molybdenum (Mo), zirconium (Zr), nitride (SiN), silicon oxide (SiO₂ ) Is configured of at least one material 1, has a thickness of 1 nm ∼ 300 nm, preferably, 2 nm ∼ 100 nm, more preferably, a thickness of 10 nm hereinafter.

A pellicle for use in extreme ultraviolet photomask according to required conditions according to an embodiment of the present invention may have various forms.

Figure 3 shows a cross-section of the present invention number 2 in the embodiment according to EUV photomask pellicle also shown are disclosed.

The reference also 3, the present invention according to EUV photomask pellicle (200) is [pheyl the layer which will grow (106), [pheyl the layer which will grow (106) parallel strength reinforcing layer pattern (108b), [pheyl the layer which will grow (106) with the lower edge of the support layer pattern portion (104a) and a support layer pattern (104a) front surface of the frame layer (102a) comprises. Wherein, [pheyl the layer which will grow (106), support layer pattern (104a) and frame layer pattern (102a) and the same the above number 1 in the embodiment, the strength reinforcing layer (108b) on structure are the same and the number [...] number 1 in the embodiment.

Strength reinforcing layer (108a) the external environment, various processes including etching process moisture is low [pheyl the layer which will grow (106) for mechanical, thermal, optical properties more to reinforce the uneven shape.

Said hole (H ') is uneven strength reinforcing layer (108a) 50% ∼ 80% of the total thickness corresponding to has a thickness. Said uneven strength reinforcing layer pattern (108a) strength reinforcement layers are etched to form, [pheyl the layer which will grow (106) formed on the substrate by a photolithography process to expose the to.

In addition, uneven strength reinforcing layer of (108a) of 1 nm ∼ 5 nm on the above number 1 in the embodiment (not shown) in the form of thin film thickness strength reinforcing layer pattern forming method can be implemented.

Said silicon carbide (SiC) and connected to the source, silicon nitride (SiN), boron carbide (B₄ C), molybdenum (Mo), hafnium base year-old (Ru), zirconium (Zr) of 1 or more patterns are, chemical vapor deposition (Chemical Vapor Deposition), sputtering (Sputtering), such as the atomic layer deposition method (Atomic Layer Deposition) formed on the substrate.

Figure 4 shows a cross-section of the present invention number 3 in the embodiment according to EUV photomask pellicle also shown are disclosed.

The reference 4 also, the present invention according to EUV photomask pellicle (300) is [pheyl the layer which will grow (106), [pheyl the layer which will grow (106) parallel strength reinforcing layer pattern (108a), [pheyl the layer which will grow (106) front surface of the support layer (104) and a support layer (104) with the lower edge of the framing layer pattern portion (102a) comprises. Wherein, [pheyl the layer which will grow (106), the strength reinforcing layer (108a), framing layer pattern (102a) the above number 1 and number 2 in the embodiment and the same, support layer (104) on the number 1 and number 2 in the embodiment [...] number and structure are the same.

Support layer (104) is, with number 1 in the embodiment described above in etch stop layer and mechanical strength reinforcing the functioning of, 13. In a photolithography process using an exposure light in a 5 nm EUV wavelength generated by emitting high heat energy due to prevent deformation of the thin film constituting the pellicle itself are serve as thermal energy, not the shape of a thin film pattern.

Support layer (104) having excellent yes pin mechanically and thermally, silicon carbide (SiC), boron carbide (B₄ C), hafnium base year-old (Ru), molybdenum (Mo), zirconium (Zr), nitride (SiN), silicon oxide (SiO₂ ) 1 Contains preferably at least one of the configurable.

Figure 5 shows a cross-section of the present invention number 4 in the embodiment according to EUV photomask pellicle also shown are disclosed.

The reference also 5, the present invention according to EUV photomask pellicle (400) is [pheyl the layer which will grow (106), [pheyl the layer which will grow (106) strength reinforcing layer pattern of parallel concave (108b), [pheyl the layer which will grow (106) front surface of the support layer (104) and a support layer (104) with the lower edge of the framing layer pattern portion (102a) comprises. Wherein, [pheyl the layer which will grow (106) and frame layer pattern (102a) the same to the above number 1 and number 3 in the embodiment, the strength reinforcing layer (108b) and the same the above number 2 in the embodiment, support layer (104) on the above number 3 in the embodiment are the same.

Laser diode, the present invention according to EUV photomask pellicle are arranged in a mesh having a plurality of size hole [pheyl the layer which will grow on panel, high strength reinforcing layer with a pattern of transmittance of light produced by a wide variety of exposure system for EUV optical permeable area can be removed.

In addition, even thinner photoresist layer having a high degree of mechanical strength strength reinforcing, compared to a thermal conductivity can be formed by mechanical and enhancing thermal properties.

Figure 6 shows a method of the present invention number 1 in the embodiment according to EUV photomask pellicle number bath to explain also shown to surface are disclosed.

(A) the reference of Figure 6, the present invention according to EUV photomask pellicle number is used as a basis for numerical control machine, [pheyl the layer which will grow (106) framing layer that serves to support (102) a 4700. Framing layer (102) the determination of directionally, doping density 10²⁰ Ions/cm² Hereinafter in 6 inch, 8 inch size and 100 micro m ∼ 2 mm having a thickness of silicon (Si) variety of wafer is measured for plural times.

Then, framing layer (102) on the upper surface of chemical vapor deposition, sputtering, atomic layer deposition method such as through support layer to have a thickness of 1 nm ∼ 100 nm (104) formed on the substrate. Support layer (104) silicon (Si) carry the framing layer consisting (102) the etched, etch stop layer set as each other. Support layer (104) is yes pin, silicon carbide (SiC), boron carbide (B₄ C), hafnium base year-old (Ru), molybdenum (Mo), zirconium (Zr), nitride (SiN), silicon oxide (SiO₂ ) Including at least one substance during 1 formed on the substrate.

Then, support layer (104) to a transmittance of at least 80% on single crystal silicon (c a-Si), silicon (Si) or carbon (C) said polycrystalline silicon (p a-Si), silicon (Si) compound including at least one of nitrogen (N) [pheyl the layer which will grow the thickness of 20 nm ∼ 60 nm (106) formed on the substrate. [Pheyl the layer which will grow (106) is an epitaxial growth (Epitaxy growth), chemical vapor deposition, sputtering, atomic layer deposition, ion beam deposition (Ion Beam Deposition), method such as electroplating (Electro plating) is formed on the substrate.

Then, [pheyl the layer which will grow (106) upper and framing layer (102) of chemical vapor deposition, sputtering, atomic layer deposition method such as silicon carbide (SiC) through, silicon nitride (SiN), boron carbide (B₄ C), molybdenum (Mo), hafnium base year-old (Ru), zirconium (Zr) of at least one substance including number 1 and number 2 1 strength reinforcing layer (108, 110) formed on the substrate. Number 1 and number 2 strength reinforcing layer (108, 110) is 13. A thickness of 5 nm to 2 nm ∼ 10 nm EUV wavelength translucency to exposure a transmittance of at least 80% formed on the substrate.

Wherein, [pheyl the layer which will grow (106) a number 1 formed on top of the strength reinforcing layer (108) having a plurality of size (Nano size) after a substrate with a hole having a mesh (Mesh) formed so [pheyl the layer which will grow (106) and an apparent mechanical, thermal, optical properties could be bonded each other reinforcing. In addition, framing layer (102) is formed on a number 2 of strength reinforcing layer (110) is a frame which carry layer (102) the etched, etching mask act as substrate.

Then, number 1 strength reinforcing layer (108) on sputtering, atomic layer deposition, ion beam deposition method such as using alumina layer (112) has a thickness of 1 to form micro m hereinafter.

(B) the reference of Figure 6, alumina layer (112) phosphate (phosphoric acid), oxalic acid (oxalic acid), sulfuric acid (sulfuric acid) solution using one or more acidic solution at least 1 or more times with a hole having an anodized alumina layer by performing anodizing of regular pattern (112a) formed on the substrate.

Then, anodized alumina layer pattern (112a) is removed from lower strength reinforcing layer number 1 (108) with a hole having a mesh structure in the high temperature strength reinforcing layer pattern of a pre (108a) formed on the substrate. It can be said etch process is performed using lithography and etch, wet etching polyimid, pre holes difficult hole interval in parallel to an upper plane, preferably using dry etching.

Anodized alumina layer pattern (112a) is, first, alumina layer (112) to 1 difference anodizing which gives rise to electric, chemical reactions through alumina layer (112) into from the surface of the alumina layer (112) is oxidized for regular grooves formed on the substrate. Then, said 1 difference portion is phosphoric acid (phosphoric acid) and chromium is oxidizable by anodizing acid (Chromic acid) number using a solution mixed with a stand-alone substrate. Then, anodized alumina layer exposed anodizing said 1 difference 2 difference in positions corresponding to said groove by forming a regular anodized alumina layer with a hole pattern (112a) complete formation of 2000.

Anodized alumina layer pattern (112a) said hole size and hole formed in a gap between the anodizing process applied voltage, aqueous solution, such as application time by changing process conditions can be controlled. A gap between said hole size and hole number 1 strength reinforcing layer (108a) 4. important element determining the shape of the nano-mesh structure. The, anodized alumina layer pattern (112a) is strength reinforcing layer number 1 (108a) which is excellent in optical properties of said hole area larger than hole by strength reinforcing layer number 1 (108a) and the hole diameter or having a diameter of 20 nm ∼ 100 nm to 10 nm ∼ 80 nm intervals forming or the holes may have preferably a process condition.

(C) of Figure 6 reference surface, anodized alumina layer pattern (112a) number a stationary substrate. Wherein, anodized alumina layer pattern (112a) is phosphoric acid or hydrofluoric (Hydrofluoric acid) number through wet etching using a stationary substrate.

Then, framing layer (102) number 2 on the lower strength reinforcing layer (110) on the resist layer pattern (112a) is formed, resist layer pattern (112a) number 2 is etched strength reinforcing layer (110) is formed by etching the framing layer (102) the strength reinforcing layer etched number 2 (110a) formed on the substrate.

(D) the reference of Figure 6, the strength reinforcing layer number 2 (110a) framing layer exposed at the fifth step (102) the framing layer pattern etching a portion (102a) formed on the substrate.

Said framing layer (102) of KOH etch process is performed, such as wet or dry etching process using TMAH etching solution goes, said resist layer pattern (112a) is framing layer (102) number of stand-alone to exhaust disapproval. Framing layer pattern (102a) of removing the inner cross-section according to the sidewall or cross-section, may have a variety of shapes like perpendicular.

Wherein, [pheyl the layer which will grow (106) on the lower support layer (104) is framing layer (102) which act as etching mask is etched through, said wet etching when etching, support layer (104) is nitride (SiN) or silicon oxide (SiO₂ ) Preferably forming a. In addition, framing layer (102) of the mask process is [pheyl the layer which will grow (106) the upper surface of the strength reinforcing layer number 1 (108a) for protecting the strength reinforcing layer at least number 1 (108a) surrounding the holder (116, One side holder) in mounting a plurality of hierarchies.

(E) the reference of Figure 6, framing layer pattern (102a) region of support layer (104) portion and strength reinforcing layer number 2 (108a) number to a stand-alone number numerical control machine according to an embodiment of the present invention extreme ultraviolet photomask pellicle complete substrate.

Thus, the present invention according to EUV photomask pellicle simple anodizing bath method number method alumina layer pattern formed from a few nanometers to tenths of a nanometer in diameter hole having mesh structure by forming a plurality of pellicle number strength reinforcing layer can be formed with a process for preparing, chemical reaction can.

Or more, but most preferred embodiment through a browser using the present invention, technical range of the present invention, a range said in the embodiment is not limited. Applying said in the embodiment it is possible to various modification or improvements corresponding light emitting diodes hereinafter art typical techniques for user if it will rain. Such modification or improvements added aspect of the technical range of the present invention can be in the range of from the substrate patent claimed that a special disclosed.