A method to form copper damascene interconnects using a reverse barrier metal scheme to eliminate copper diffusion

27-08-2004 дата публикации

Номер:

SG105455A1

Автор: Chooi Simon, Jian Xun Li, Mei Sheng Zhou

Принадлежит: Chartered Semiconductor Mfg

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/7 H01L21/76 H01L21/768 H01L21/7680 H01L21/76805 H01L21/76807 H01L21/7683 H01L21/76831 H01L21/7684 H01L21/76844

IPC - классификация

H H0 H01 H01L H01L2 H01L21 H01L21/H01L21/3 H01L21/32 H01L21/321 H01L21/3212 H01L21/7 H01L21/76 H01L21/768