Trench MOS device with improved single event burn-out endurance

28-01-2020 дата публикации

Номер:

US10546951B2

Автор: Bo Zhang, Chi XIE, Jinping Zhang, Min Ren, Wei Gao, Yuci LIN, Zehong LI, Zhiheng SU

Принадлежит: Institute Of Electronic And Information Engineering Of Uestc In Guangdong

Контакты:

Номер заявки:

Дата заявки:

CPC - классификация

H H0 H01 H01L H01L2 H01L29 H01L29/H01L29/0 H01L29/06 H01L29/061 H01L29/0619 H01L29/062 H01L29/0623 H01L29/064 H01L29/0646 H01L29/4 H01L29/41 H01L29/417 H01L29/4176 H01L29/41766 H01L29/42 H01L29/423 H01L29/4236 H01L29/7 H01L29/78 H01L29/780 H01L29/7805 H01L29/781 H01L29/7813

IPC - классификация

H H0 H01 H01L H01L2 H01L29 H01L29/H01L29/6 H01L29/66 H01L29/660 H01L29/6606 H01L29/66068 H01L29/8 H01L29/86 H01L29/868 H01L29/87 H01L29/872

Получить PDF