INTER-CHIP ESD PROTECTION STRUCTURE FOR HIGH SPEED AND HIGH FREQUENCY DEVICES

08-02-2007 дата публикации

Номер:

US2007029646A1

Автор: VOLDMAN STEVEN H, VOLDMAN STEVEN H.

Принадлежит:

Контакты:

Номер заявки: 05-14-1614

Дата заявки: 02-08-2005

The present invention relates to inter-chip electrostatic discharge (ESD) protection structures for high speed, and high frequency devices that contain one or more direct, inter-chip signal transmission paths. Specifically, the present invention relates to a structure that contains: (1) a first chip including a first circuit, (2) a second chip including a second circuit, (3) an intermediate insulator layer located between the first and second chips, wherein the first and second circuits form a signal transmission path for transmitting signals through the intermediate insulator layer. An electrostatic discharge (ESD) protection path is provided in the structure between the first and the second chip through the intermediate insulator layer, to protect the signal transmission path from ESD damages.

CPC - классификация

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IPC - классификация

H H0 H01 H01L H01L3 H01L39 H01L39/H01L39/0 H01L39/00