Method of making interband tunneling diodes
04-12-2007 дата публикации
Номер:
US0007303969B2
Автор: Paul R. Berger, Phillip E. Thompson, Roger Lake, Karl Hobart, Sean L. Rommel, BERGER PAUL R, THOMPSON PHILLIP E, LAKE ROGER, HOBART KARL, ROMMEL SEAN L, BERGER PAUL R., THOMPSON PHILLIP E., ROMMEL SEAN L.
Принадлежит: The Ohio State University, UNIV OHIO STATE
Контакты:
Номер заявки: 34-43-0993
Дата заявки: 21-08-2001






















CPC - классификация
BB8B82B82YB82Y1B82Y10B82Y10/B82Y10/0B82Y10/00HH0H01H01LH01L2H01L29H01L29/H01L29/6H01L29/66H01L29/661H01L29/6615H01L29/66151H01L29/8H01L29/88H01L29/882YY1Y10Y10SY10S4Y10S43Y10S438Y10S438/Y10S438/9Y10S438/97Y10S438/979Y10S438/98Y10S438/983IPC - классификация
GG1G11G11CG11C2G11C23G11C23/G11C23/0G11C23/00HH0H01H01LH01L2H01L21H01L21/H01L21/2H01L21/20H01L21/3H01L21/32H01L21/329H01L29H01L29/H01L29/7H01L29/77H01L29/775H01L29/8H01L29/88Цитирование НПИ
257/22A. Seabaugh et al, “Transistors and Tunnel Diodes for Analog/Mixed-Signal Circuits and Embedded Memory”, Raytheon Systems Company.
A.N.Larsen et al., “Diffusion of Sb in relaxed SiGe”, Appl.Phys.Lett. 68 (19), 1996, pp. 2684.
C. C. Yang et al, “The Study of GaAs/INnGaAsδ-Doping Resonant Interband Tunneling Diode”, Materials Science and Engineering B35 (1995) 259-262.
D. J. Day et al, “Experimental Demonstration of Resonant Interband Tunnel Diode With Room Temperature Peak-to-Valley Current Ratio Over 100”, J. Appl. Phys. 73, (3), Feb. 1, 1993.
G. E. Becker et al, “Recptor Dopants in Silicon Molecular-Beam Epitaxy”, Journal of Applied Physics, vol. 48, No. 8, Aug. 1977.
H. H. Tsai et al, “P-N Double Quantum Well Resonant Interband Tunneling Diode with Peak-to-Valley Current Ratio of 144 at Room Temperature”, IEEE Electron Device Letters, vol. 15, No. 9, Sep. 1994.
H. J. Gossman et al, “Delta Doping in Silicon”, Critical Reviews in Solid State and Materials Sciences, 18(1):1-67 (1993).
J. Knall et al, “Indium Incorporation During the Growth of (100) Si By Molecular Beam Epitaxy: Surface Segregation & Reconstruction”, Applied Physics Letters 45 (6), Sep. 15, 1984.
J. Shen et al, “Static Random Access Memories Based on Resonant Interband Tunneling Diodes in the InAs/GaSb/AlSb Material System”, IEE Electron Device Letters, vol. 16, No. 5, May 1995.
J.P.A. Van Der Wagt et al, “RTD/HFET Low Standby Power SRAM Gain Cell”, IEEE Electron Device Letters, vol. 19, No. 1, Jan. 1998.
K. D. Hobart et al, “Surface Segregation and Structure of Sb-Doped Si (100) Films Grown at Low Temperature by Molecular Beam Epitaxy”, Surface Science 334 (1995) 29-38.
K. Ismail et al, “Electron Resonant Tunneling in Si/SiGe Double Barrier Diodes”, Applied Physics Letters, 59, (8), Aug. 19, 1991.
K. Morita et al, “Si Interband Tunneling Diode Through a Thin Oxide With a Degenerate Poly-Si Electrode”, Central Research Lab, pp. 175-176, Nov. 5-7, 1997
K. Morita et al, “Supply Voltage by a Novel Si Interband Tunneling Diode”, Central Research lab, pp. 42-43.
L. L. Chang et al, “Resonant Tunneling in Semiconductor Double Barries”, Applied Physics Letters, vol. 24, No. 12, Jun. 15, 1974.
Mark Sweeny et al., “Resonant Interband Tunnel Diodes”, Appl. Phys. Lett, 54(6), Feb. 6, 1989, pp. 546-548.
Mark, Sweeny et al, “Resonant Interband Tunnel Diodes”, Applied Physics Letters, 54 (6), Feb. 6, 1989.
R. Duschel et al, “Epitaxially Grown Si/SiGe Interband Tunneling Diodes With High Room-Temperature Peak-to-Valley Ratio”, Applied Physics Letters, vol. 76, No. 7, Feb. 14, 2000.
R. Duschl et al, “High Room Temperature Peak-To-Valley Current Ratio in Si Based Esaki Diodes”, Electronics Letters, vol. 35, No. 13, May 24, 1999.
R. Tsu et al, “Tunneling in a Finite Superlattice”, Applied Physics Letters, vol. 22, No. 11, Jun. 1973.
S. A. Barnett et al, “Si Molecular Beam Epitaxy: A Model for Temperature Dependent Incorporation Probabilities and Depth Distributions of Dopants Exhibiting Strong Surface Segregation”, Depts. Metallurgy, Coordinated Sci. Lab. & Materials Research Lab, Oct. 15, 1984.
T. E. Jackman et al, “Annealing Studies of Highly Doped Boron Superlattices”, J. Applied Physics, 66 (5), Sep. 1, 1989.
Ulf Gennser et al, “Resonant Tunneling of Holes Through Silicon Barriers”, J. Vac. Sci. Technol. B, vol. 8, No. 2, Mar./Apr. 1990.
Ulf Gennser et al., “Resonant tunneling of holes through silicon barriers”, J.Vac.Sci.Technol.b 8 (2), 1990, pp. 210.
V. M. Franks et al, “An Alloy Process for Making High Current Density Silicon Tunnel Diode Junctions”, Solid-State Electronics, vol. 8-pp. 343-344, Jan. 5, 1964.
Wang YH et al, “Homotype Resonant Tunneling Structures in Molecular-Beam Epitaxially Grown Delta-Dopes GaAs”, Journal of Vacuum Science & Technology B, Mar.-Apr. 1992.
Wang YH et al, “Resonant Tunneling Diode in MBE-Grown Delta-Doped GaAs”, Abstract, Electronic Letters, Aug. 29, 1991.