СПОСОБ И УСТРОЙСТВО ДЛЯ РЕЗКИ МОНОКРИСТАЛЛОВ, А ТАКЖЕ УСТРОЙСТВО ДЛЯ ЮСТИРОВКИ И СПОСОБ ТЕСТИРОВАНИЯ ДЛЯ ОПРЕДЕЛЕНИЯ ОРИЕНТАЦИИ КРИСТАЛЛА

Изобретение может быть использовано в полупроводниковой промышленности. Сущность изобретения: способ разделения монокристалла, в частности GaAs, заключается в том, что монокристалл (1) разрезается, по меньшей мере, на две части и режущий инструмент (2, 3; 8, 8а, 8b, 8с) перемещают относительно друг друга в направлении продвижения (V), при этом монокристалл (1) ориентируют таким образом, что заданная кристаллографическая ориентация (К) лежит в плоскости (Т) резки, а угол (р) между заданным кристаллографическим направлением (К) и направлением продвижения (V) выбирают таким образом, чтобы силы, которые действуют на режущий инструмент во время резки в направлении, перпендикулярном плоскости резки, компенсировали бы друг друга или представляли собой заданную силу. Изобретение позволяет увеличить скорость резки и улучшить качество получаемых пластин, что позволяет обходиться без этапов их последующей обработки. 4 н. и 12 з.п. ф-лы, 12 ил.

ЛАЗЕРНЫЙ РАСПИЛОВОЧНЫЙ СТАНОК ДЛЯ АЛМАЗОВ

Изобретение относится к новому лазерному станку для распиливания алмазов. Техническим результатом является повышение качества и скорости распиливания алмазов. Для этого станок состоит из источника лазерного излучения, интерфейса центрального навигационного вычислительного устройства (числового программного управления CNC), системы подачи луча, переключающего высокочастотного драйвера модулятора добротности лазера, блока для охлаждения, камеры замкнутой телевизионной системы и прибора с зарядной связью (CCTV & CCD), блока подачи энергии, серво-стабилизатора и блока компьютера. 20 з.п. ф-лы, 9 ил.

СПОСОБ И УСТРОЙСТВО ДЛЯ ПРОМЕРОВ, ОРИЕНТИРОВАНИЯ И ФИКСАЦИИ МИНИМУМ ОДНОГО МОНОКРИСТАЛЛА

Использование: для промеров, ориентирования и фиксации минимум одного монокристалла. Сущность: заключается в том, что монокристалл позиционируют для определения ориентации кристаллической решетки с возможностью юстировки на вращающемся столе, и углы нормалей плоскостей кристаллической решетки к оси вращающегося стола устанавливают во время минимум одного оборота вращающегося стола при помощи рентгеноскопии, после чего посредством установленных углов осуществляют ориентирование монокристалла относительно оси вращающегося стола, служащей как основное направление, прежде чем производится фиксация монокристалла и крепление на ориентированном в основном направлении носителе. Технический результат: обеспечение повышенной точности при определении кристаллографической ориентации и ориентированной фиксации независимо от внешней геометрии монокристаллов. 2 н. и 13 з.п. ф-лы, 5 ил.

СПОСОБ ЗАПИСИ ИНФОРМАЦИИ ВНУТРИ КРИСТАЛЛА АЛМАЗА

Изобретение относится к технологии создания внутри алмазов изображений, несущих информацию различного назначения, например, кода идентификации, метки, идентифицирующие алмазы. Способ записи информации внутри кристалла алмаза 1 включает проектирование информационного элемента в виде метки с помощью устройства 10, подготовку поверхности кристалла, позиционирование кристалла с использованием средств 2, 5, 6, 7, 8, 9 для создания информационного элемента, формирование информационного элемента путем воздействия излучением лазера 11 на кристалл, контроль создания информационного элемента и корректировку информационного элемента, при этом предварительно кристалл алмаза 1 размечают на бриллианты, проводят исследование кристалла на наличие макроскопических дефектов, создают его объемную цифровую модель с учетом внутренней дефектности кристалла, в том числе топологии поверхности, проектирование информационного элемента осуществляют так, чтобы он находился в требуемом месте будущего бриллианта, и ...

СИСТЕМА И СПОСОБ ДЛЯ ИЗГОТОВЛЕНИЯ ХИРУРГИЧЕСКИХ ЛЕЗВИЙ

... 1. Способ изготовления режущего приспособления из кристаллического материала, содержащего следующие этапы: механическая обработка по меньшей мере одного профиля лезвия в пластине из кристаллического материала на ее первой стороне; травление пластины из кристаллического материала для формирования по меньшей мере одного хирургического лезвия; и отделение друг от друга хирургических лезвий, выполненных из протравленного кристаллического материала. 2. Способ по п. 1, в котором этап механической обработки включает механическую обработку по меньшей мере одного профиля лезвия в пластине из кристаллического материала посредством разрезания режущим диском. 3. Способ по п. 1, в котором этап механической обработки включает механическую обработку по меньшей мере одного профиля лезвия в пластине из кристаллического материала с помощью лазерного луча. 4. Способ по п. 3, в котором лазерный луч генерируют эксимерным лазером или лазерной водяной струей. 5. Способ по п. 1, в котором этап механической обработки ...

ЛАЗЕРНЫЙ РАСПИЛОВОЧНЫЙ СТАНОК ДЛЯ АЛМАЗОВ

... 1. Лазерный распиловочный станок для алмазов, состоящий из источника лазерного излучения, интерфейса центрального навигационного вычислительного устройства (числового программного управления CNC), системы подачи луча, высокочастотного переключающего драйвера модулятора добротности лазера, блока охлаждения, камеры замкнутой телевизионной системы и прибора с зарядной связью (CCTV & CCD), блока подачи энергии, серво-стабилизатора и блока компьютера. 2. Лазерный распиловочный станок для алмазов по п.1, в котором источник лазерного излучения состоит из лазерной головки, переключающего модулятора добротности лазера, диафрагмы, переднего и заднего зеркала, модулятора безопасности лазера и расширителя луча. 3. Лазерный распиловочный станок для алмазов по п.2, в котором переключающий модулятор добротности используется для сохранения световой энергии лазера для излучения в виде вспышки с высокой пиковой мощностью. 4. Лазерный распиловочный станок для алмазов по п.2, в котором диафрагма контролирует ...

АБРАЗИВНАЯ ПРОВОЛОКА ДЛЯ РЕЗКИ, СПОСОБ ЕЕ ИЗГОТОВЛЕНИЯ И ЕЕ ПРИМЕНЕНИЕ

УСТРОЙСТВО ДЛЯ ЛОМКИ ИЗГИБОМ СТЕКЛЯННЫХ ПЛАСТИН

Предложенная группа изобретений относится к устройству для ломки изгибом стеклянных пластин. Устройство для ломки изгибом стеклянных пластин содержит гибкий элемент, на котором помещается стеклянная пластина со сформированной на ней линией резания; опорный механизм, на который посредством гибкого элемента опирается нижняя поверхность стеклянной пластины; приемное устройство для стеклянных пластин, имеющее кольцевую приемную поверхность для размещения нижней поверхности стеклянной пластины посредством гибкого элемента и выемку, окруженную кольцевой приемной поверхностью; первое движущееся устройство для перемещения приемной поверхности приемного устройства для стеклянных пластин; устройство для ломки прессованием стеклянной пластины по линии резания путем давления на верхнюю поверхность стеклянной пластины; и второе движущееся устройство для перемещения устройства для ломки прессованием. Второе движущееся устройство приспособлено перемещать устройство для ломки прессованием таким образом ...

Способ лазерной резки слитков неметаллических материалов на пластины

Изобретение относится к способам резки неметаллических материалов, в частности кварцевого стекла, кремния, карбида кремния и других хрупких термостойких материалов. Техническим результатом является повышение качества резки неметаллических материалов на пластины. Заявлен способ лазерной резки слитков неметаллических материалов на пластины, согласно которому в объеме образца неметаллического материала создают надрез сфокусированным лазерным излучением, а затем поверхность слитка нагревают лазерным излучением, для которого материал непрозрачен, при относительном перемещении лазерного пучка и образца материала. При этом надрез создают лазерным излучением, сфокусированным в пятно диаметром 10-100 мкм от импульсного пикосекундного или фемтосекундного лазера, со стороны поверхности образца неметаллического материала в виде не менее двух размещенных вдоль линии реза локальных концентраторов напряжений на глубине h=0,1-1 мм. Причем расстояние между локальными концентраторами напряжений выбирают ...

Способ разделения пластин на кристаллы двухдисковым инструментом

Использование: в твердотельной микроэлектронике . Сущность изобретения: в способе перед каждым очередным проходом перемещают инструмент на шаг, соответствующий удвоенному расстоянию между соседними дорожками разделения на пластине, причем между дисками остав.- ляют по одной прорезанной и одной непрорезанной дорожке разделения. 1 табл , 1 ил ...

Способ автоматической настройки ультразвуковых станков

Ленточноотрезной станок

Изобретение относится к области станкостроения и предназначено для прецизионной резки слитков полупроводниковых материалов. Цель изобретения - повышение качества реза. Ленточноотрезной станок включает станину 1 с основными 2, 3 и регулировочным 4 шкивами для установки бесконечной ленточной пилы 5 и механизм регулирования положения регулировочного шкива 4 в пространстве вокруг оси 10 цилиндрического шарнира 6, расположенной в плоскости, перпендикулярной осям вращения шкивов 2, 3, ,4, проходящей через середину высоты шкивов 2, 3, 4. Ось 10 цилиндрического шарнира 6 механизма регулирования положения регулировочного шкива 4 Б пространстве перпендикулярна биссектрисе 21 угла, образованного внешними общими касательными-22 к регулировочному шкиву 4, и является касательной к регулировочному шкиву 4 со стороны установки пилы 5. 3 ил. § W fS П 15 15 W ISP со СА 19 ...

Separator for strip mounted switches and electric components - has rotary assembly of several saw blades on common, motor driven shaft

The components on the strips are disconectable at the separation points. A multiple sawing mechanism (12) contains saw blades (14) on a common shaft (13,24). The multiple mechanism is so arrestable that one shaft (24) can be driven by a motor (9). Above the driven shaft is fitted a holder for the individual components, with the holder displaceable transversely w.r.t. the shaft. On each shaft are fitted the saw blades in the spacing of ther separating points such that their numbers corresp. to the numbers of the required separating points. The holder pref. contains a movable and a stationary holding member. The movable holding member may be actuated by a pneumatic drive. USE/ADVANTAGE - For switches, LEDs, opto-electronic couplers, etc., with clean and safe separation in any arbitrary configuration.

PRAEZISIONSSCHNEIDVORRICHTUNG MIT AUTOMATISCHER DRUCKSTEUERUNG

Anordnung zum Bohren harter Koerper, beispielsweise Uhrensteine, mit einer durch einDruckmittel angetriebenen Bohrspindel

Substrat und Verfahren zur Bruchvorbereitung eines Substrats für mindestens ein Leistungshalbleiterbauelement

Die Erfindung betrifft ein Verfahren zur Bruchvorbereitung eines Substrats (1) für mindestens ein Leistungshalbeiterbauelement mit folgenden Verfahrensschritten: a) Bereitstellen des Substrats (1), wobei das Substrat (1) einen elektrisch nicht leitenden Isolierstoffkörper (2) aufweist, b) Materialabtrag am Isolierstoffkörper (2) entlang gewünschter Bruchkanten (A, B, C, D, E) des Substrats (1), wobei der Materialabtrag derart durchgeführt wird, dass in Eckbereichen (14) an denen mindestens zwei gewünschte (A, B, C, D, E) Bruchkanten zusammentreffen, ein gegenüber dem Materialabtrag, welche in den übrigen Bereichen (17) der gewünschten Bruchkanten (A, B, C, D, E) durchgeführt wird, höherer Materialabtrag durchgeführt wird. Weiterhin betrifft die Erfindung ein diesbezügliches Substrat (1). Die Erfindung ermöglicht die Reduktion von unerwünschten Ausbrüche am Isolierstoffkörper (2) beim Brechen eines Substrats (1) für mindestens ein Leistungshalbeiterbauelement.

VERFAHREN ZUM BOHREN VON DIAMANTEN MITTELS LASERSTRAHLEN

Klingenersetzungsvorrichtung und Einstellverfahren der Klingenersetzungsvorrichtung

Es wird eine Klingenersetzungsvorrichtung zum Auswechseln einer Schneidklinge bereitgestellt. Die Klingenersetzungsvorrichtung weist eine Klingenspeichereinheit auf, die einen bewegbaren Speicherabschnitt aufweist, der ausgestaltet ist, um die Schneidklinge zu speichern, eine Transporteinheit, die eine Halteeinheit aufweist, die ausgestaltet ist, um die Schneidklinge zu halten, und einen Bewegungsmechanismus, der ausgestaltet ist, um die Halteeinheit zu bewegen, eine Kamera, die ausgestaltet ist, um die Halteeinheit zu fotografieren, und eine Steuerungseinheit, die einen Betriebssteuerungsabschnitt aufweist, der ausgestaltet ist, um den Betrieb der Klingenspeichereinheit und der Transporteinheit zu steuern, und einen Positionsregistrierungsabschnitt, in dem Positionen des Speicherabschnitts und der Halteeinheit registriert werden. Der Speicherabschnitt weist einen ersten Markierungsabschnitt auf, der von der Kamera fotografiert werden kann, und die Halteeinheit weist einen zweiten Markierungsabschnitt ...

Verfahren zur Herstellung von Dauermagneten mit uebereinstimmender Kristallorientierungs- und Magnetisierungsrichtung und danach hergestellte Dauermagnete

Vorrichtung zum automatischen Trennen entlang vorherbestimmter Biegebruchlinien in keramischen Grundplättchen von elektronischen Hybridschaltungen.

Drahtelektroerosionsbearbeitungsvorrichtung und Drahtelektroerosionsearbeitungsverfahren, Halbleiterwaferherstellungsvorrichtung und Halbleiterwaferherstellungsverfahren, und Solarzellenwaferherstellungsvorrichtung und Solarzellenwaferherstellungsverfahren

Drahtelektroerosionsbearbeitungsvorrichtung, Folgendes umfassend: eine Drahtelektrode, die als Schneidedrähte eingesetzt wird, die parallel mit einem Abstand dazwischen vorgesehen und einem Werkstück zugewandt sind; eine Bearbeitungsstromquelle, die eine impulsförmige Bearbeitungsspannung erzeugt; und mehrere Speiseeinheiten, die jeweils elektrisch an die Schneidedrähte der Schneidedrahtelektrode angeschlossen sind und die Bearbeitungsspannung zwischen den Schneidedrähten bzw. dem Werkstück zuführen, wobei bei den parallelen Schneidedrähten die Speiseeinheiten so angeordnet sind, dass eine Richtung eines Stroms, der zu zumindest einem Teil der Schneidedrähte geleitet wird, zu einer Richtung wird, die sich von einer Richtung eines Stroms unterscheidet, der zu anderen Schneidedrähten geleitet wird.

Verfahren zur Wiederaufnahme des Betriebs einer Drahtsäge und Drahtsäge

Die vorliegende Erfindung betrifft ein Verfahren zur Wiederaufnahme des Betriebs einer Drahtsäge, umfassend die folgenden Schritte: Aufschneiden des Werkstücks, während ein Verschiebungsbetrag in axialer Richtung von jeder der gerillten Rollen und eine Temperatur des Werkstücks während des Aufschneidens des Werkstücks gemessen und aufgezeichnet werden; Aussetzen des Aufschneidens des Werkstücks; Einstellen des Verschiebungsbetrags in axialer Richtung von jeder der gerillten Rollen und der Temperatur des Werkstücks durch Zuführen von temperatureinstellenden Medien, die separat temperaturgesteuert werden, zu den gerillten Rollen und dem Werkstück, so dass diese gleich dem Verschiebungsbetrag und der Temperatur sind, die jeweils beim Aussetzen des Aufschneidens des Werkstücks aufgezeichnet werden, und zwar nach dem Aussetzen und vor der Wiederaufnahme des Aufschneidens des Werkstücks; und anschließend Wiederaufnahme des Aufschneidens. Als Ergebnis werden ein Verfahren zur Wiederaufnahme des ...

Diamant für Abrichtungsvorrichtung

Waferprodukt und Herstellungsverfahren dafür

Waferprodukt, das aufgrund einer Multiphotonenabsorption durch Schneiden mit einem umgestalteten Bereich (R) geschnitten und getrennt wird, der durch ein Laserlicht (L) ausgebildet wird, das an einen lichtkonvergierenden Punkt (P) aufgebracht wird, der als Startpunkt zum Schneiden angeordnet ist, wobei das Waferprodukt aufweist: einen Wafer (10) mit zwei Flächen (10a, 10b), von welchen eine eine Laserlichteinfallsfläche (10b) ist, dadurch gekennzeichnet, dass eine andere Fläche (10a), welche der Laserlichteinfallsfläche (10b) gegenüberliegend angeordnet ist, derart aufgeraut ist, dass sie gleichförmige Erhebungen und Vertiefungen (10c) daran aufweist, und eine maximale Höhe von Erhebungen und Vertiefungen einer Oberflächenrauheit gleich oder größer als eine Wellenlänge des Laserlichts (L) ist.

Verfahren zur Herstellung eines Sintermagneten

Verfahren zur Herstellung eines Sintermagneten, das die Stufen umfasst: Herstellung eines Vorpresslings (Grünlings) aus einem Pulver für den Sintermagneten; maschinelle Bearbeitung des Vorpresslings mit einer Drahtsäge und Sintern des Vorpresslings.

Verfahren zum Strukturieren von CIGS-Dünnschichtsolarzellen

Verfahren zum Strukturieren von CIGS-Dünnschichtsolarzellen, bei denen auf einem Substrat zunächst mehrere übereinanderliegende Schichten ausgebildet werden, die nachfolgend mit einem rotierenden Werkzeug abschnittsweise wieder abgetragen werden, dadurch gekennzeichnet, dass ein rotierendes Werkzeug zum Abtrag von Schichten über einem Rückkontakt eingesetzt wird, wobei das rotierende Werkzeug mit einer zentrisch zur Antriebsachse gelagerten asymmetrischen Nadel, einer exzentrisch rotierenden symmetrischen Nadel oder einer zentrisch zur Antriebsachse gelagerten Nadel mit mehreren Nadelspitzen zum Schichtenabtrag ausgestattet ist, wobei der Abstand zwischen den Nadelspitzen und der Rotationsachse zwischen 0,1 mm und mehreren cm beträgt und wobei das rotierende Werkzeug derart über die Dünnschichtsolarzelle geführt wird, dass ein Freilegen einer Linie oder vorbestimmten Fläche durch Wahl der Verfahrrichtung und Versatz des Vorschubs erfolgt.

Verfahren zum Zerschneiden eines Einkristallbarren aus Halbleitermaterial

Anreissverfahren zum Teilen eines Halbleiterplaettchens in Pillen

Waferherstellungsverfahren

Ein Waferherstellungsverfahren zum Herstellen eines Wafers aus einem Lithiumtantalat-Ingot beinhaltet einen Schritt zum Bestrahlen von einer Endfläche eines Lithiumtantalat-Ingots, der ein Ingot mit einem um 42° gedrehten Y Schnitt ist, der eine Orientierungsfläche aufweist, die parallel zu einer Y Achse ausgebildet ist, mit einem Laserstrahl, der eine Wellenlänge aufweist, für die Lithiumtantalat transparent ist, wobei ein Fokuspunkt des Laserstrahls im inneren des Ingots positioniert ist, um eine modifizierte Schicht in dem Inneren des Ingots auszubilden, während der Ingot für eine Verarbeitung zugeführt wird, und einen Schritt zum Aufbringen einer äußeren Kraft auf dem Ingot, um ein plattenförmiges Material von dem Ingot abzulösen, um einen Wafer herzustellen. Bei dem Schritt zum Ausbilden einer modifizierten Schicht wird der Ingot für eine Bearbeitung relativ in einer Richtung parallel oder senkrecht zu der Orientierungsfläche zugeführt.

Vorrichtung und Verfahren zur Waferherstellung

Chemical or mechanical treatment of silicon wafers - which are bonded to metal components held on magnetic plate immersed in bath for etching of the wafers

The wafers are soldered or alloyed onto metal components, which are laid on a magnetic plate; after the chemical treatment of the wafers, the metal components are removed from the magnetic plate. The magnetic plate is pref. coated with a plastic which resists etchants, and is immersed in an etching bath for the chemical treatment of the wafers. The process is used e.g. to etch pn-junctions on the wafers, or for lapping, polishing, or shot blasting the wafers, where the support offered by the metal components prevents the fracture of thin Si wafers during the treatment.

Verfahren zur Behandlung einer verbrauchten Glykolaufschlämmung

SiC-SUBSTRATBEARBEITUNGSVERFAHREN

Es wird ein SiC-Substratbearbeitungsverfahren zum Herstellen eines SiC-Substrats aus einem SiC-Ingot offenbart. Das SiC-Substratbearbeitungsverfahren umfasst einen Trennschichtausbildungsschritt mit einem Einstellen eines Brennpunkts eines Laserstrahls, der eine Transmissionswellenlänge für SiC aufweist auf eine von der oberen Fläche des SiC-Ingots aus vorbestimmte Tiefe im Inneren des SiC-Ingots und als Nächstes einem Aufbringen eines Laserstrahls LB auf den SiC-Ingot, um dadurch eine Trennschicht zum Trennen des SiC-Substrats von dem SiC-Ingot auszubilden, einen Substratanbringschritt mit einem Anbringen eines Substrats an der oberen Fläche des SiC-Ingots und einen Trennschritt mit einem Aufbringen einer äußeren Kraft auf die Trennschicht, um dadurch das SiC-Substrat mit dem Substrat von dem SiC-Ingot entlang der Trennschicht zu trennen.

Feinstbohrmaschine zum Bohren von Loechern von bis herab zu 0,005 mm in Diamant oder anderen Hartsteinen

Verfahren zur Herstellung von Halbleiterscheiben von einem zylinderförmigen Werkstück durch Bearbeiten des Werkstücks mittels einer Drahtsäge

Verfahren zur Herstellung von Halbleiterscheiben von einem zylinderförmigen Werkstück durch Bearbeiten des Werkstücks mittels einer Drahtsäge, umfassend das Ummanteln des Werkstücks mit einer Opferkörper, wobei der Querschnitt durch das ummantelte Werkstück rechteckig oder quadratisch ist; und das Zustellen des ummantelten Werkstücks durch ein Drahtgatter der Drahtsäge.

DIAMANTMARKIERVERFAHREN

Einrichtung zum Vereinzeln von Silizium-Wafern von einem Stapel

Die Erfindung betrifft eine Einrichtung zum Vereinzeln von feuchten Silizium-Wafern (2) von einem Waferstapel (1), wobei die feuchten Wafer (2) einzeln vom Waferstapel (1) trennbar und an sich anschließende Förderelemente (7) übergebbar sind, wobei die Einrichtung Vereinzelungswalzen (4) aufweist, auf denen der Waferstapel (1) aufsetzbar ist, wobei durch Drehung der Vereinzelungswalzen (4) der unterste Wafer (2.1) unter einer Abstreifleiste (5) durch eine waferdicke Lücke zwischen Walzenebene (I) und Abstreifleiste (5) schiebbar und durch elastische Pressung von einem übereinanderliegenden, mit gleicher Drehzahl angetriebenen Auszugswalzenpaar (6.1 und 6.2) aus dem Waferstapel (1) herausziehbar ist.

MASCHINE ZUM RILLEN VON PLATTEN, INSBESONDERE FUER GEDRUCKTE SCHALTUNGEN

Simultaneous separation of numerous discs from hard, brittle workpiece with longitudinal axis and peripheral surface

The workpiece is fed by a translatory relative motion, orthogonal to the longitudinal axis between it and a wire frame of a wire saw by a feeder through the wire frame. During cutting of the discs the workpiece is rotated about it longitudinal axis. The workpiece rotation is carried out in dependence to the wire motion and to the relative motion between the workpiece and wire frame. But not synchronously with the wire motion. The ratio of new wire to the used one corresponds to a certain program. An independent claim is included for a wire saw.

Semiconductor panel subdivision system - uses single and double sided adhesive tapes and push-out needle device

A system for subdividing one of a series of semi-conductor containing panels whilst maintaining the order of the components having the panel attached to a self-adhesive tape or foil sectioned and the foil attached to another foil, has the unsectioned semiconductor panel (4) stuck onto a foil (3) of single sided adhesive type. This foil (3) is then stuck onto a double sided adhesive type foil (2) after break up of the panel (4). This foil (2) is then attached to the surface of a cylindrical ring (1), positioned over a push out needle device (7) which lifts the component away from the foils (2, 3) and allow it to be removed by vacuum forceps.

Verfahren und Vorrichtung zur Reinigung von Substraten an einem Träger

Bei einer Vorrichtung und einem Verfahren zur Reinigung von Substraten an einem Träger, an dessen Unterseite die Substrate parallel zueinander mit geringem Abstand zueinander befestigt sind, weist der Träger in seinem Inneren mehrere parallel zueinander verlaufende Längskanäle auf. Durch das Zersägen der Wafer gehen sie mit Öffnungen in Zwischenräume zwischen den Substraten über. Durch eine Relativbewegung wird ein längliches Rohr in mindestens einen der Längskanäle eingebracht, wobei aus dem Rohr Reinigungsflüssigkeit ausgebracht wird, wobei die Relativbewegung im Wesentlichen durch Bewegen des Trägers erreicht wird.

Device for processing wafer comb made up of wafer, has supplying unit for supplying rinsing fluid to wafer comb, where supplying unit has slot nozzle

The device has a supplying unit (2) for supplying a rinsing fluid to a wafer comb, where the supplying unit has a slot nozzle (3). The slot nozzle is so attached on a side surface of the wafer comb that the slot nozzle extends in normal direction of the wafer during the rinsing process. The distance between the slot and the side surface is smaller than 1 millimeter, particularly smaller than 100 microns. An independent claim is included for a method for processing a wafer comb made up of wafer.

System and method for processing a diamond material work-piece

METHOD AND APPARATUS FOR CRYSTAL CUTTING

... 1436577 Severing DEFENCE SECRETARY OF STATE FOR 22 May 1974 [31 May 1973] 25951/73 Heading B3D A method of cutting brittle crystals, for example, crystals of lead telluride, gallium phosphide, lithium niobate, indium phosphide, comprises mounting the crystal 3 on an end of a pivotable arm 5, and pressing the crystal against a saw 1 by means 9 ... 16 for pivoting the arm through a resilient connector 7. In apparatus for carrying out the method, the crystal 3 is glued to a carrier 4 on a core end of lightweight arm 5 movable about a pivot 6 to engage the crystal with a rotatable diamond impregnated annular saw blade 1. The other end of the arm carries the resilient connector 7 in the form of a piece of resilient rubber which is either acted on by weights or is engaged by a ball 10 on an anvil 8 of a micrometer 9, the body 11 of which is fixed. The thimble 12 of the micrometer is driven by a friction clutch or belt 14 from a 500 : 1 gear-box 15 and variable speed electric motor 16, the speed ...

Improvements in the sub-dividing of crystalline materials

... 1,115,537. Splitting stone. O. THANING. 18 May, 1967 [30 May, 1966], No. 23174/67. Heading B5E. A method of subdividing a sheet of hard brittle crystalline material, such as quartzite, comprises the application of a vibratory pressure of predetermined frequency along a narrow predetermined path on the sheet and subsequently applying an impactive bending load to the sheet on either side of the predetermined path. The sheet of brittle material is laid on two sheets of resilient material, such as rubber, which rest on a platform 3 carried by a table 1 filled with concrete 2. The sheets of rubber are separated by a wedge-shaped member 4, the ridge of which is adapted to substantially align with the edge 13 of a clamp bar 6 when the latter is lowered over the sheet of brittle material and clamped via a spring- and-handle device 11,12. A percussive chisel is then moved along the edge 13 in order to form a line of weakness. Upon raising the bar 6 and striking the brittle material on either side ...

CUTTING BRITTLE MATERIALS

Ultrasonic cutting

An ultrasonic cutting device includes a transducer, an ultrasonic horn and a cutting blade. The transducer generates ultrasonic vibrations in a direction having a longitudinal axis, and the ultrasonic horn has a nodal point and at least three projections extending, respectively, to vibrating faces equidistantly away from and symmetrically about the nodal point, one of the vibrating faces being connected to the transducer so that, in operation, the ultrasonic horn is vibrated. The cutting blade is connected to one of the vibrating faces of the ultrasonic horn which is not connected to the transducer and is positioned in a plane transverse to the longitudinal axis of vibrations so that, in operation, the blade is vibrated.

Ultrasonic cutting device

A cutting device comprises an ultrasonic horn (6) having a cylindrical body portion (8) with a face to which longitudinal ultrasonic vibrations are applied by a piezo-electric transducer (12) through a booster (14). On the opposite side to the face (10) the body (8) is outwardly flared into a bell-shaped section (16), terminating in a circumferential flange (18). The flange (18) may be provided by a cutting edge, which in the operation of the device undergoes a "pulsating" motion, vibrating alternatively radially outwardly in an expansion mode and radially inwardly in a contraction mode. Preferably however one or more cutting blades (24) are attached to the flange (18), to effect cutting. Conveniently the device comprises means (22) to enable the cutting device to be attached to a rotary mandrel or spindle, to enable the cutting device to be rotated about its longitudinal axis. ...

Scribing apparatus, substrate cutting apparatus equipped with the scribing apparatus, and substrate cutting method using the substrate cutting apparatus

WIRE SAW

A wire saw has a wire (B) wound around a plurality of multigrooved rollers (7, 8) with turns in rows to thereby cut a work (A) by means of the wire portion (B3) running between said rollers. By reversible revolution of the multigrooved rollers (7, 8) the wire (B) is moved gradually from a wire feeding side to a wire recovery side, while being given a reciprocating motion between the multigrooved rollers (7, 8). In addition, the multigrooved rollers (7, 8) are rotated around a fixed axis to swing the operative portion of the wire (B3) between said rollers (7, 8) through a circular arc in a manner to produce a contact surface approximating to a point between the work (A) and the wire (B) whereby a larger concentrated load is applied to the contact point utilizing fully permissible additional tension of the wire (B), thus accelerating cutting process speed and raising cutting process accuracy. Drive means for the wire (B) include movable pulley type double-speed mechanisms (51, 54) and an ...

Semiconductor-slice cleaving

Cleavage of a semiconductor single crystal slice (10) is initiated at a peck-mark (16) formed in the upper surface at one edge of the slice by bending the slice over a cutting edge of a semiconductor slice dicing wheel (30). The cleave is propagated to the far edge of the slice by relative sliding movement of the wheel across the underside of the slice. The wheel is not rotatably driven during the relative movement between slice and the blade of the wheel. The method may be used formed in the slice. ...

Marking diamond

Marking diamond

An invisible information mark is provided on a facet of a diamond gemstone by applying a plasma resist to the exposed surface of the gemstone, applying an electrically conducting layer of metal to the region where the information mark is to be formed, ablating a selected zone of the metal and resist layers by ultraviolet laser thus forming a mask on the surface of the facet, electrically connecting the metal layer and plasma etching the facet through the mask, thus forming a mark of appropriate depth on the surface of the gemstone.

Substrate cutting apparatus equipped with a scribing apparatus

Separating cut semiconductor wafers from a wafer stack

An apparatus for separating a front wafer 40 from a stack of wafers includes a chuck 10 for gripping the front wafer, coupled to a mechanical arm 21 and rotatable about at least one axis with respect to the arm, so as to allow the chuck 10 to align substantially parallel to the front wafer 40, provided with a fixing mechanism for fixing the chuck 10 in a desired orientation. Further included is a drive 23 for moving the arm in at least in two directions, one direction to bring the chuck 10 to the front wafer 40 and in another direction substantially parallel to the fixed orientation of the chuck 10 to separate the wafer from the stack of wafers 42. A stopper mechanism 46 is provided for preventing other wafers from separating from the stack while the front wafer is being separated.

A PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE

... 1,214,238. Semi-conductor devices. BROWN, BOVERI & CO. Ltd. 15 May, 1969 [17 May, 1968], No. 24843/69. Heading H1K. A bevelled cavity is ground around the side of a semi-conductor wafer 4 containing two or more PN junctions. The shape shown may be formed by first grinding with the use of a large diameter wire, then with a wire of smaller diameter, and then with the still smaller wire 3 shown. Metal sheets may be used instead for the grinding. Rather than using grinding bodies of different sizes it is possible to use a sheet or wire having a profile complementary to that of the desired groove. The process may involve the use of grinding agents of different granulation ...

CRYSTAL CLAMPING FIXTURE

... 1383738 Severing INTERNATIONAL BUSINESS MACHINES CORP 12 Sept 1973 [9 Nov 1972] 42857/73 Heading B3D [Also in Division E2] A crystal boule clamping fixture comprises a frame 11 in which are fixed a pair of parallel rods 25, 26, a clamp 30 hinged to the frame and movable to a closed position to press the crystal boule 20 against the rods and to an open position to permit insertion and withdrawal of a boule, a lever 40 fixed to the clamp and means 43 biasing the lever to the closed position, antitorque means 33 on the clamp to mate with means 32 on the crystal boule to inhibit rotation thereof, and means 45 acting on the lever to over-ride the biasing means to lift the clamp into the open position. The fixture is indexed to present the boule, which may be of silicon or germanium, to a blade 18 for cutting into thin slices. The frame 11 has flanges 13, 14 provided with arcuate slots 13A, 14A for receiving bolts 15, 16 whereby the frame is secured to a cutting machine 17 having a blade 18, ...

Abrasive wire sawing

Translucent stone cluster effect articles

A translucent stone cluster effect article (11) for use in jewellery having substantially parallel front (12) and back (13) faces, comprising a relief pattern of faceted projections (14) on its back face (13), the front face (12) being unfaceted. The faceted projections (14) comprising close packed right pyramids with even numbers of sides with an apex angle of between 84° and 96°. The pyramids have four sides, but may have six, eight or more sides and their apexes can be spaced apart by 2.1mm, 2.7mm, 3.1mm or 3.5mm. The front face (12) may be flat, or may have a shallow convex or concave curvature. The faceting may extend to the edge of the article, giving a jagged edge, or may not extend to the edge. The article may be made by cutting intersecting v-shaped grooves at right angles into one face of a disc (101) of translucent material (e.g. cubic zirconia) to form close packed right pyramids. The grooves may be cut by a mutli-bladed cutting wheel (104), coated with hard grit such as corundum ...

Saw wire assembly, cutting method utilising the same, and system therefor

Method and device for facilitating separation of sliced wafers

APPARATUS FOR AND A AMETHOD OF CLEAVING LAMINATED MATERIAL

A process for use in the production of a semiconductor device

... 1,019,332. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Feb. 28, 1963 [June 19, 1962; Aug. 28, 1962], No. 8163/63. Heading H1K. In making a semi-conductor device, the semi-conductor body, after a metal electrode has been alloyed to it, is heated in a gaseous medium containing the vapours of nitric and hydrofluoric acids. The body is held at a temperature above that of the vapours to prevent them condensing on the body and thus conveying metal ion impurities into it. In the embodiment a silicon disc is alloyed between gold-antimony and aluminium foils backed by molybdenum plates and the resulting assembly subject to the treatment with acid vapour in a polystyrene vessel. The gaseous medium; the composition of which is given, may include nitrogen, rare gases, air or oxygen. After the treatment, which may also be applied to germanium transistor and four layer element, the assembly is coated with lacquer.

Improvements in and relating to methods of separating into pieces plates of brittle material

... 925,016. Disintegrating brittle material. MULLARD Ltd. May 12, 1959, No. 16243/59. Class 59. [Also in Groups XXIII and XXXVI] A plate of brittle material having a plurality of score lines extending substantially parallel to one another is separated into pieces by being moved relative to at least one of two members, one on each side of the plate, the shape and resilience of the two members being such that a bending moment is exerted on the plate by the two members and moves progressively along the plate, separating the plate along each score line in turn. As shown, Fig. 1, a slice 20 of a crystal of a semi-conductor material, e.g. germanium or silicon, scored on one face along two sets of parallel, equally spaced lines at right angles to one another, is fixed by adhesive tape 23 to a layer 14 of resilient rubber or felt on a platform 6 which is secured to a shaft 5 journalled in a member 2 which is movable within a casing 12 by a reversible motor 1 and, a cord 3. In operation, when the motor ...

Improvements in methods of cutting corundum rods

... 594,047. Cutting corundum. LINDE AIR PRODUCTS CO. June 25, 1945, No. 16112. Convention date, July 15, 1944. Addition to 581,619, [Group VII]. [Class 124] In a method of producing discs from synthetic unicrystalline corundum rods as described in the parent Specification, a rod is selected wherein the angle between the optic axis and the longitudinal axis is between 30 and 80 degrees and disposed in such a position with respect to a tool, e.g. a saw, that of the total force exerted by the tool, that component which is parallel to the optic axis is at the minimum value, a disc being then cut from the rod. The component parallel to the optic axis should not exceed 40 per cent of the total force applied. As shown, a corundum rod 11 of <3>/16 inch diameter has a plane 13 passing through the optic axis and the longitudinal axis indicated by a line 15 and a rotary saw blade 19 is arranged to cut vertically downwards through it, the components of the force exerted by the saw being vertically downwards ...

FLUID OPERATED WORK FEED MECHANISMS MACHINE TOOLS

... 1322355 Fluid operated rams NATIONAL RESEARCH DEVELOPMENT CORP 11 Aug 1971 [21 Aug 1970] 40508/70 Heading F1D [Also in Division B3] A fluid-operated actuator comprises a ram 7 for supporting a semi-conductor 3 for cutting by blades 1, the ram being supported in a ram chamber 9 by gaseous or liquid fluid and being guided vertically by a compressed air bearing 8 through which the ram passes. The bearing 8 includes two pairs of opposed plates 12, 13 which contain air jets 14 for providing a compressed air interface between the bearing and ram. The chamber 9 and bearing 8 have flanges 21, 20 which are joined together. The bearing is surrounded by bellows 27 to prevent air from the bearing interfering with the cutting operation. Gas is supplied to chamber 9 through an aperture 22 at the bottom thereof.

Improvements in or relating to machines for recessing jewel bearings

... 770,403. Drilling jewels. GENERAL ELECTRIC CO., Ltd., and HUMPHREY, R. May 31, 1955 [May 31, 1954], No. 16086/54. Class 83 (3). [Also in Group XXIII] A jewel-recessing machine comprises means for rotating a needle 9, means 10 for grinding the point at intervals, means for withdrawing the needle when an operation is complete, and means 5 for moving a further jewel into position. In operation, synthetic sapphires are placed in containers 8 positioned in recesses 6 in a belt 5. The container beneath the drill is clamped by an arm 35 in a V-notch 34 in a table 30 adjusted laterally by micrometer-screws 31. A small quantity of diamond powder in liquid is placed on the jewel and a cam 44 on a shaft 15 lowers the drill-carriage 2. After a short period, the needle is withdrawn by the cam 44 and a further cam 17 permits a grinding-wheel 10 to be fed by springs 41 to grind the drill point at an angle determined by a scale 42. The needle is then re-lowered. At each withdrawal of the drill a capstan-operated ...

Machine for cutting, shaping and lapping crystals and the like

... 198,786. Harrison, C., and Kempster, A. C. March 10, 1922. Sawing. - Crystals &c. are cut into slabs by means of a rotating diamond saw A, and are supported, during cutting, on a traversable table J having a guide C. The saw is mounted on a shaft a carried in a slide b which is adjustable vertically by a screw B. A hood F and a water supply pipe G are provided for the saw.

A decorative necklace punching apparatus

CUTTING BLADES

METHOD OF CRACKING A SHEET OF BRITTLE MATERIAL

... 1496479 Splitting RCA CORPORATION 16 Sept 1976 [29 Sept 1975] 38399/76 Heading B5E A method of cracking a sheet 16 of brittle material, such as a semi-conductor wafer having a coating of solder on a major surface thereof, the sheet having at least one plurality of parallel scribe lines thereon, comprises supporting the sheet in a cantilever manner at a position at least one scribe line away from an edge thereof substantially parallel with the scribe lines, and applying a shear force to the edge of the sheet remote from the support position whereby the sheet is fractured at said one scribe line. In apparatus for carrying out the method, the wafer is secured on a flexible adhesive sheet and with the score lines on its upper surface is placed in a recessed slot 14 in a base 12. A slide assembly 18 having a contact bar 20 for engaging the wafer is provided with blocks 22 slidable on guide rods 24 on the base. A rack 26 on the assembly 18 is connected by gearing 45 to a rod 42 extending through ...

Method of producing semiconductor devices

... A recess or pit in a body of silicon is produced by crystallographically damaging a portion of the body and etching that portion to provide a substantially flat bottomed pit. Fig. 1 shows a silicon body 4 subjected to the predetermined pressure of a 3-sided diamond point 6 by means of a weighted lever 8. The body is then etched in a boiling 30% solution of potassium hydroxide for 10 minutes. Fig. 2 shows a silicon wafer 2 suitable for a transistor having an emitter recess 4 and a collector recess 6 produced as above. Sodium hydroxide may be used as the etchant and additives such as ethylene glycol (which tends to flatten the bottom of the recess) or sodium carbonate (to raise the boiling point) may be used. The effect of different concentrations of etchant on recess shape is discussed. The crystallographic damage may be caused by rotation of or scratching by the diamond point.

WORKING GEMSTONES

Method for laser machining inside materials

APPARATUS FOR BREAKING A SEMICONDUCTOR WAFER

... 1492000 Splitting INTERNATIONAL BUSINESS MACHINES CORP 16 Sept 1976 [21 Oct 1975] 38424/76 Heading B5E An apparatus for breaking a semi-conductor wafer along prescribed lines comprises a plurality of ball elements 8 mounted on a support 6, a flexible adhesive sheet 3 attached to a carriage 10, the wafer being mounted on the sheet, means 46 to move the support in a direction perpendicular to the plane 16 of the sheet 3 so that the ball elements deflect the sheet out of the plane to induce a bending moment about prescribed lines in the wafer juxtaposed the ball elements to break the wafer along the prescribed lines, and means to move the carriage so as to displace the sheet in its plane. The sheet 3 is attached to a mounting card 1 and the wafer, which has been prescribed with saw lines 4 is mounted on the sheet 3. The card is received in guides 5 on the carriage 10 which is movable in X and Y directions by sliding means 12, 14 so as to move the sheet and wafer in the plane 16. The support ...

INDEXING MECHANISMS AND MACHINE TOOLS INCORPORATING THE SAME

... 1506448 Grinding; linear indexing CAPLIN ENG CO Ltd 30 July 1976 [4 Aug 1975] 32584/75 Headings B3D and B3B An indexing mechanism for affecting stepwise advance between a workpiece and a tool or workpiece of a machine tool by an indexing stroke of predetermined length comprises first and second displaceable members 10, 11 interconnected for displacement, in turn, alternately towards and away from each other, the extent of the displacement determining the indexing stroke, means 22 to adjust the extent of the stroke, and means 14, 16 operable to selectively immobilize each member during displacement of the other. The indexing stroke may be curved or linear and in a vertical, horizontal or other direction. As described, the mechanism effects linear vertically downward movement of a silicon rod 3 which is to be cut into slices or wafers by an annular saw 4, as described in Specification 1,319,768. The indexing mechanism is mounted in slideways 5 of a carrier 6 fixed to a plate 7 of an arm 8 ...

MANUFACTURE OF WIRE BLADE PACK

Gemstone processing

WAFER CUTTER

METHOD FOR THE SEPARATION FROM SUBSTRATES

PROCEDURE AND DEVICE FOR THE SEPARATION OF A SINGLE CRYSTAL

CUTTING HEAD

PROCEDURE FOR THE PRODUCTION OF CONSTRUCTION UNITS

DECREASE OF ATTRACTION BETWEEN SILICON WAFERS

DEVICE FOR CUTTING A SUBSTRATE LAYER AND EQUIVALENT PROCEDURE

DEVICE AND PROCEDURE FOR THE SORT

PROCEDURE FOR THE SEPARATION OF FLAT WORKPIECES FROM CERAMIC(S) WITH A COMPUTED RADIATION MARK LENGTH

DEVICE AND PROCEDURE FOR CLEANING A SAWED WAFER BLOCK

DEVICE AND PROCEDURE FOR CUTTING CARRIERS FROM BRITTLE MATERIAL AS WELL AS AUTOMATIC ANALYSIS LINE

PROCEDURE FOR DIVIDING A SUBSTRATE AND A PROCEDURE FOR THE PRODUCTION OF A PANEL

PROCESSING DEVICE

Eine Verarbeitungsvorrichtung schließt einen Spanntisch zum Halten eines Werkstücks, eine Verarbeitungseinheit zur Verarbeitung des auf dem Spanntisch gehaltenen Werkstücks, während dem Werkstück Prozesswasser zugeführt wird, und eine an dem Boden der Verarbeitungsvorrichtung befestigte Wasserwanne zur Aufnahme des Prozesswassers bei Wasserleckage ein.

LASER BEAM PROCESSING PROCEDURE

PROCEDURE FOR THE CLEANING OF SIC PARTICLES

LASER PROCESSING METHOD

VORRICHTUNG UND VERFAHREN ZUM AUFBRINGEN UND/ODER ABLÖSEN EINES WAFERS AUF EINEN/VON EINEM TRÄGER

The invention relates to a device for applying and/or detaching a wafer to/from a carrier with a deformable membrane which can be aligned parallel to the contact surface of the wafer, with one contact side for at least partial contact-making with the contact surface, deformation means which are located backward to the contact side for deformation of the membrane which can be controlled in a defined manner and adhesion means for adhesion of the wafer to the membrane and process for detaching and/or applying a wafer to/from a carrier with a corresponding device.

DEVICE AND PROCEDURE FOR THE SORT OF DISK-SHAPED SUBSTRATES UNDER USE OF ADHESIVE POWERS

СТАНОК ДЛЯ РАСПИЛИВАНИЯ КРИСТАЛЛА АЛМАЗА

СТАНОК ДЛЯ РАСПИЛИВАНИЯ КРИСТАЛЛА АЛМАЗА, содержащий станину, распиловочные секции с держателями кристалла алмаза и экран, отличающийся тем, что держатель кристалла алмаза содержит устройство ориентации кристалла, выполненное в виде двух последовательно установленных червячных пар со скрещивающимися осями червячных колес, а лицевая сторона экрана облицована пористым покрытием. (19) RU (11) (13) 1 663 U1 (51) МПК B28D 5/00 (1995.01) B24B 9/16 (1995.01) РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К СВИДЕТЕЛЬСТВУ (21), (22) Заявка: 94027815/33, 25.07.1994 (46) Опубликовано: 16.02.1996 (71) Заявитель(и): Специальное конструкторско-технологическое бюро "Кристалл" 1 6 6 3 R U (57) Формула полезной модели СТАНОК ДЛЯ РАСПИЛИВАНИЯ КРИСТАЛЛА АЛМАЗА, содержащий станину, распиловочные секции с держателями кристалла алмаза и экран, отличающийся тем, что держатель кристалла алмаза содержит устройство ориентации кристалла, выполненное в виде двух последовательно установленных червячных пар со скрещивающимися осями червячных колес, а лицевая сторона экрана облицована пористым покрытием. Ñòðàíèöà: 1 U 1 U 1 (54) СТАНОК ДЛЯ РАСПИЛИВАНИЯ КРИСТАЛЛА АЛМАЗА 1 6 6 3 (73) Патентообладатель(и): Специальное конструкторско-технологическое бюро "Кристалл" R U (72) Автор(ы): Гурьев В.П., Писарев Г.В., Деверилин Ю.А. RU 1 663 U1 RU 1 663 U1 RU 1 663 U1 RU 1 663 U1 RU 1 663 U1

УЛЬТРАЗВУКОВОЙ СТАНОК ДЛЯ РАЗМЕРНОЙ ОБРАБОТКИ ХРУПКИХ МАТЕРИАЛОВ

1. УЛЬТРАЗВУКОВОЙ СТАНОК ДЛЯ РАЗМЕРНОЙ ОБРАБОТКИ ХРУПКИХ МАТЕРИАЛОВ, содержащий установленную на кронштейне направляющей стойки акустическую головку с концентратором - инструментом, связанную с ультразвуковым генератором, столик и узел подачи абразивной суспензии, отличающийся тем, что узел подачи абразивной суспензии выполнен в виде лотка, смонтированного с возможностью поворота и поступательного перемещения относительно его подвески, шарнирно установленной на кронштейне направляющей стойки, а столик выполнен подъемным. 2. Станок по п. 1, отличающийся тем, что столик выполнен с ручным эксцентриковым механизмом подъема. (19) RU (11) (13) 1 827 U1 (51) МПК B28D 5/00 (1995.01) РОССИЙСКОЕ АГЕНТСТВО ПО ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К СВИДЕТЕЛЬСТВУ (21), (22) Заявка: 95103760/33, 01.03.1995 (46) Опубликовано: 16.03.1996 (71) Заявитель(и): Товарищество с ограниченной ответственностью Научно-производственное объединение "Уралбетон" 1 8 2 7 (73) Патентообладатель(и): Товарищество с ограниченной ответственностью Научно-производственное объединение "Уралбетон" R U (72) Автор(ы): Демаков В.Л., Кузнецов А.П., Савченко Ю.И. 1 8 2 7 R U (57) Формула полезной модели 1. УЛЬТРАЗВУКОВОЙ СТАНОК ДЛЯ РАЗМЕРНОЙ ОБРАБОТКИ ХРУПКИХ МАТЕРИАЛОВ, содержащий установленную на кронштейне направляющей стойки акустическую головку с концентратором - инструментом, связанную с ультразвуковым генератором, столик и узел подачи абразивной суспензии, отличающийся тем, что узел подачи абразивной суспензии выполнен в виде лотка, смонтированного с возможностью поворота и поступательного перемещения относительно его подвески, шарнирно установленной на кронштейне направляющей стойки, а столик выполнен подъемным. 2. Станок по п. 1, отличающийся тем, что столик выполнен с ручным эксцентриковым механизмом подъема. Ñòðàíèöà: 1 U 1 U 1 (54) УЛЬТРАЗВУКОВОЙ СТАНОК ДЛЯ РАЗМЕРНОЙ ОБРАБОТКИ ХРУПКИХ МАТЕРИАЛОВ RU 1 827 U1 RU 1 827 U1 RU 1 827 U1 RU 1 827 U1 RU 1 827 U1 RU 1 827 U1

СТАНОК ДЛЯ ОБТОЧКИ КРИСТАЛЛОВ

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УСТРОЙСТВО ДЛЯ ИЗГОТОВЛЕНИЯ КУЛАЧКОВ ДЛЯ ОБРАБОТКИ КАБОШОНОВ

Устройство для изготовления кулачков для обработки кабошонов, включающее в себя основание, на котором крепится шпиндельный блок с приводом вращения шпинделя, шлифовальный круг, блок с подвижным валом и упорный блок, отличающееся тем, что шлифовальный круг установлен на валу упорного блока и имеет отдельный привод вращения, на валу шпиндельного блока установлен диск, а на подвижном валу закреплены эталон кабошона и заготовка кулачка с возможностью взаимодействия с диском на шпинделе и шлифовальным кругом соответственно. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 48 865 (13) U1 (51) МПК B28D 5/02 (2000.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ Адрес для переписки: 236000, г.Калининград, Советский пр-кт, 1, Калининградский государственный технический университет, патентный отдел (73) Патентообладатель(и): КАЛИНИНГРАДСКИЙ ГОСУДАРСТВЕННЫЙ ТЕХНИЧЕСКИЙ УНИВЕРСИТЕТ (RU) (24) Дата начала отсчета срока действия патента: 04.04.2005 U 1 4 8 8 6 5 R U Ñòðàíèöà: 1 U 1 Формула полезной модели Устройство для изготовления кулачков для обработки кабошонов, включающее в себя основание, на котором крепится шпиндельный блок с приводом вращения шпинделя, шлифовальный круг, блок с подвижным валом и упорный блок, отличающееся тем, что шлифовальный круг установлен на валу упорного блока и имеет отдельный привод вращения, на валу шпиндельного блока установлен диск, а на подвижном валу закреплены эталон кабошона и заготовка кулачка с возможностью взаимодействия с диском на шпинделе и шлифовальным кругом соответственно. 4 8 8 6 5 (54) УСТРОЙСТВО ДЛЯ ИЗГОТОВЛЕНИЯ КУЛАЧКОВ ДЛЯ ОБРАБОТКИ КАБОШОНОВ R U (45) Опубликовано: 10.11.2005 (72) Автор(ы): Борисов Б.П. (RU) , Правдин Р.Ф. (RU) , Перетятко С.Б. (RU) , Жданова М.В. (RU) (21), (22) Заявка: 2005109652/22 , 04.04.2005 U 1 U 1 4 8 8 6 5 4 8 8 6 5 R U R U Ñòðàíèöà: 2 RU 5 10 15 20 25 30 35 40 45 50 48 865 U1 Предлагаемая полезная модель относиться к машиностроению, в ...

СТАНОК-АВТОМАТ ДЛЯ СВЕРЛЕНИЯ ШАРОВ

Станок-автомат для сверления шаров, содержащий станину, шпиндельный блок, двигатель привода механизмов станка, редуктор, кулачок, блок подачи, шиберный блок, питатель, трубку питателя, лоток для готовых изделий, отличающийся тем, что трубка питателя через изолирующую трубку снабжена нагревательным элементом, который связан с термодатчиком. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) 53 952 (13) U1 (51) МПК B23B 41/00 (2006.01) B28D 5/02 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ, ПАТЕНТАМ И ТОВАРНЫМ ЗНАКАМ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (21), (22) Заявка: 2005100290/03 , 11.01.2005 (24) Дата начала отсчета срока действия патента: 11.01.2005 (45) Опубликовано: 10.06.2006 (73) Патентообладатель(и): КАЛИНИНГРАДСКИЙ ГОСУДАРСТВЕННЫЙ ТЕХНИЧЕСКИЙ УНИВЕРСИТЕТ (RU) U 1 5 3 9 5 2 R U Ñòðàíèöà: 1 U 1 Формула полезной модели Станок-автомат для сверления шаров, содержащий станину, шпиндельный блок, двигатель привода механизмов станка, редуктор, кулачок, блок подачи, шиберный блок, питатель, трубку питателя, лоток для готовых изделий, отличающийся тем, что трубка питателя через изолирующую трубку снабжена нагревательным элементом, который связан с термодатчиком. 5 3 9 5 2 (54) СТАНОК-АВТОМАТ ДЛЯ СВЕРЛЕНИЯ ШАРОВ R U Адрес для переписки: 236000, г.Калининград, Советский пр., 1, Калининградский государственный университет, патентный отдел (72) Автор(ы): Перетятко Сергей Борисович (RU), Тилипалов Владимир Николаевич (RU), Макарский Валерий Алексеевич (RU) RU 5 10 15 20 25 30 35 40 45 50 53 952 U1 Изобретение относится к области машиностроения, в частности, к устройствам для сверления изделий из неметаллических мягких материалов, пластмасс, поделочных и полудрагоценных камней, например, янтаря. Известен станок-автомат (решение о выдаче патента от 02.09.2004 по заявке РФ №2003131111/02, МПК В 23 В 41/00, В 28 D5/02) для одностороннего сверления изделий, содержащий станину, шпиндельный блок, двигатель привода механизмов станка, редуктор, кулачок, блок подачи, шиберный ...

УСТРОЙСТВО ТЕРМОХИМИЧЕСКОЙ ОБРАБОТКИ АЛМАЗА

1. Устройство термохимической обработки алмаза, включающее камеру со смонтированным внутри жестким телом, имеющим с одной стороны плоскую круглую поверхность, изготовленную из металла переходной группы, с возможностью вращения вокруг центральной вертикальной оси окружности круглой поверхности, нагреватель, средство для подачи в камеру газа, взаимодействующего с растворенным в металле углеродом, но не реагирующим непосредственно с алмазом, и кристаллодержатель алмаза, выполненный с возможностью перемещения вдоль продольной оси, отличающееся тем, что на жестком теле со стороны плоской круглой поверхности имеется, по меньшей мере, один выступ цилиндрообразной формы, расположенный коаксиально окружности круглой поверхности, а кристаллодержатель алмаза выполнен с возможностью поперечного перемещения на стадии обработки алмаза. 2. Устройство по п.1, отличающееся тем, что обращенная в противоположную сторону от жесткого тела поверхность выступа цилиндрообразной формы параллельна плоской круглой поверхности тела. 3. Устройство по п.1, отличающееся тем, что жесткое тело выполнено с двумя выступами цилиндрообразной формы. 4. Устройство по п.1, отличающееся тем, что поперечное перемещение представляет собой возвратно-поступательное перемещение. 5. Устройство по п.1, отличающееся тем, что кристаллодержатель алмаза выполнен с возможностью наложения на него дополнительных возвратно-поступательных вибраций относительно своей продольной оси. 6. Устройство по п.1, отличающееся тем, что кристаллодержатель алмаза выполнен с возможностью наложения на него дополнительных поперечных возвратно-поступательных вибраций. 7. Устройство по п.1, отличающееся тем, что в качестве металла переходной группы используется железо. 8. Устройство по п.1, отличающееся тем, что в качестве металла переходной группы используется молибден. 9. Устройство по п.1, отличающееся тем, что в качестве газа, взаимодействующего с растворенным в металле углеродом, но не реагирующим непосредственно с алмазом, ...

Станок-автомат для шлифовки шариков из полудрагоценных камней

Полезная модель относится к устройствам абразивной обработки шариков. Устройство может быть использовано, например, в ювелирной промышленности при изготовлении шариков из полудрагоценных и поделочных камней, в том числе из янтаря. Станок-автомат содержит станину со стойкой, на которой установлен связанный с электродвигателем шпиндель с закрепленным на нем шлифовальным кругом, выполненным с профильной радиусной канавкой на периферийной поверхности. Маятниковый механизм установлен с возможностью качательного движения и включает снабженный отдельным электродвигателем ролик, выполненный с двумя выступающими резиновыми кольцами на периферийной поверхности, которая ориентирована оппозитно периферийной поверхности шлифовального круга. Подпорка под обрабатываемый шарик расположена на маятниковом механизме между периферийными поверхностями круга и ролика. Станок дополнительно снабжен вакуумным насосом, связанным с пневмораспределителем, и пневмоцилиндром, использованным в качестве привода качательного движения маятникового механизма. Пневмоцилиндр оснащен регуляторами подачи воздуха в цилиндр и датчиками положения поршня. Станок оборудован механизмом поштучной подачи шариков, включающим бункер-питатель и податчик, установленный с возможностью возвратно-поступательного перемещения от бункера-питателя до подпорки под шарик. В качестве податчика и подпорки под шарик использованы трубки, связанные через пневмораспределитель с пневмонасосом. Кроме этого, станок оборудован блоком управления, связанным с пневмораспределителем, пневмонасосом, пневмоцилиндром, электродвигателями. Повышает производительность обработки шариков. 7 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 181 230 U1 (51) МПК B24B 11/08 (2006.01) B24B 51/00 (2006.01) B28D 5/00 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК B24B 11/08 (2006.01); B24B 51/00 (2006.01); B28D 5/00 (2006.01) (21)(22) Заявка: 2017125164, 13.07.2017 (24) Дата начала отсчета срока ...

Methods to recover and purify silicon particles from saw kerf

The present disclosure generally relates to methods for recovering silicon from saw kerf, or an exhausted abrasive slurry, resulting from the cutting of a silicon ingot, such as a single crystal or polycrystalline silicon ingot. More particularly, the present disclosure relates to methods for isolating and purifying silicon from saw kerf or the exhausted slurry, such that the resulting silicon may be used as a raw material, such as a solar grade silicon raw material.

Method and device for cleaning substrates on a carrier

In the case of a device and a method for cleaning substrates on a carrier, to the underside of which the substrates are fastened so as to be parallel to and slightly apart from one another, the carrier has in its interior a plurality of longitudinal channels, which run parallel to one another. As a result of the sawing of the wafers, they merge, via openings, into interstices between the substrates. As a result of a relative movement, an elongate tube, from which cleaning fluid is let out, is introduced into one of the longitudinal channels, the relative movement being achieved substantially through moving of the carrier.

Wafer dicing press and method and semiconductor wafer dicing system including the same

In a wafer dicing press for reducing time and cost for wafer dicing and for evenly applying a dicing pressure to a whole wafer, a wafer dicing press includes a support unit supporting a first side of a wafer; and a pressurization device applying a pressure, by dispersing the pressure, to a second side of the wafer so that a laser-scribed layer of the wafer operates as a division starting point. Accordingly, the wafer dicing press reduces laser radiation and pressure-application times for dividing a wafer into semiconductor devices. This increased efficiency is achieved without increasing the likelihood of damaging the wafer.

Laser processing method and laser processing device

A laser processing method for forming a modification region serving as a starting point of cutting inside a member to be cut along a planned cutting line by relatively moving an optical axis of a condenser lens along the planned cutting line of the member and by irradiating the member with focused laser light, wherein a plurality of cross-sectional focused spots is simultaneously formed on a section which is perpendicular to the optical axis of the condenser lens at positions having a predetermined depth from a surface of the member and which is parallel to the surface and, at that time, at least one cross-sectional focused spot of the plurality of cross-sectional focused spots is formed on a projection line of the planned cutting line onto the cross section to form one or more inside modification regions having a desired shape.

Method for slicing wafers from a workpiece

A method for slicing wafers from a workpiece includes providing wire guide rolls each having a grooved coating with a specific thickness and providing rings at opposing ends of a first of the coatings of a respective wire guide roll. The rings are fixed exclusively to the first coating. A sawing wire including wire sections disposed in a parallel fashion is tensioned between the wire guide rolls. The wire sections of the sawing wire are moved relative to the workpiece so as to perform a sawing operation. A change in length of the first coating, brought about by a temperature change, is measured by measuring distances between sensors and the rings. The wire guide rolls are cooled in a manner dependent on the measured distances.

Wafer dividing method

In a wafer dividing method, a wafer is held by a chuck table of a laser beam processing apparatus. A modified layer is formed by radiating a laser beam having a wavelength that transmits the laser beam through the wafer, while adjusting the beam convergence point to a position inside of the wafer, so as to form a pair of modified layers the interval of which is greater than the width of a cutting edge of a cutting blade and smaller than the width of planned dividing lines, on the back side of the wafer at both sides of each of the planned dividing lines. The wafer is adhered to a dicing tape and divided into individual devices by cutting along the dividing lines.

Method of configuring a dicing device, and a dicing apparatus for dicing a workpiece

A method of configuring a dicing device 101 , which dices along a cutting line of a workpiece 111 according to a dicing step, is disclosed. Numerical input of a dicing order of the dicing device 101 to dice a workpiece 111 is time-consuming and prone to errors. The disclosed method comprises the step of depicting a graphical user interface 202 , which includes a layout 203 of the workpiece 111 that further includes a plurality of cut lines relating to respective cutting lines along the workpiece 111 . The disclosed method further comprises the step of graphically contacting a cut line from the layout 203 through a user-interface device 201 , to allow selection of the cut line before the selected cut line is assigned to the dicing step of the dicing device 101 . By providing the plurality of cut lines in the layout 203 that are graphically contactable through the user-interface device 201 , the method advantageously allows an easier process of configuring the dicing step of the dicing device 101 . Also disclosed are a dicing apparatus for dicing a workpiece 111 , as well as a computer-readable medium having a computer program for instructing a computer to perform the disclosed method.

Method and apparatus for multiple cutoff machining of rare earth magnet block, cutting fluid feed nozzle, and magnet block securing jig

In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block.

Method and apparatus for multiple cutoff machining of rare earth magnet block, cutting fluid feed nozzle, and magnet block securing jig

In a method for multiple cutoff machining a rare earth magnet block, a cutting fluid feed nozzle having a plurality of slits is combined with a plurality of cutoff abrasive blades coaxially mounted on a rotating shaft, each said blade comprising a base disk and a peripheral cutting part. The slits in the feed nozzle into which the outer peripheral portions of cutoff abrasive blades are inserted serve to restrict any axial run-out of the cutoff abrasive blades during rotation. Cutting fluid is fed from the feed nozzle through slits to the rotating cutoff abrasive blades and eventually to points of cutoff machining on the magnet block.

Wire saw

The present invention provides a wire saw which cuts a workpiece using a cutting wire and is capable of adjusting wire tension with high responsiveness. The wire saw includes first and second workpiece cutting units 1 A and 1 B. Each of the workpiece cutting units 1 A and 1 B includes a pair of guide rollers 10 a and 10 b around which a wire W is wound to form a workpiece-cutting wire group. The wire saw further includes a tension detector 18 which detects tension in the wire W between the workpiece cutting units 1 A and 1 B, and a control device 50 . The control device 50 changes a rotational speed of the guide rollers 10 a and 10 b of at least one of the workpiece cutting units based on the tension detected by the tension detector 18 so as to keep the tension within an acceptable range.

Manufacturing method for semiconductor wafer

All treatments performed in machining processes other than a polishing process are performed while pure water free from free abrasive grains is supplied. Thus, an amount of abrasive grains included in a used processing liquid discharged in each process is reduced and semiconductor scraps are collected from the used slurry for recycling.

Method for cutting glass sheet

Provided is a method for cutting a glass sheet whereby even a thin glass sheet having a thickness of 1 mm or less can be suitably cut. A nick ( 20 a ) is formed on a section of a planned cutting line (L) of a glass sheet ( 20 ). The glass sheet ( 20 ) is placed on a surface ( 10 a ) of a jig ( 10 ) in which an uneven portion ( 10 b ) having a shape corresponding to the planned cutting line (L) is formed. The glass sheet ( 20 ) is cut by deforming a portion thereof located above the uneven portion ( 10 b ) and developing a crack originating from the nick ( 20 a ).

ABRASIVE ARTICLE AND METHOD OF FORMING

An abrasive article having a substrate, a tacking film overlying the substrate, abrasive particles comprising a coating layer bonded to the tacking film such that a bond between the coating layer and the tacking film defines a metallic bonding region, and a bonding layer overlying the abrasive particles and the tacking film, 1. An abrasive article comprising:a substrate;a tacking film overlying the substrate;abrasive particles comprising a coating layer overlying the abrasive particles bonded to the tacking film, wherein a bond between the coating layer and the tacking film defines a metallic bonding region; anda bonding layer overlying the abrasive particles and the tacking film.2. The abrasive article of claim 1 , wherein the substrate comprises an inorganic material.3. The abrasive article of claim 1 , wherein the substrate comprises an average length of at least about 50 m.4. The abrasive article of claim 1 , wherein the substrate comprises an average width of not greater than about 1 cm.5. The abrasive article of claim 1 , wherein the metallic bonding region comprises a diffusion bond region characterized by a region of interdiffusion between at least one chemical species of the coating layer and one chemical species of the tacking film.6. The abrasive article of claim 1 , wherein the bonding layer overlies at least about 90% of the surfaces of the abrasive particles and tacking film.7. The abrasive article of claim 1 , wherein the bonding layer comprises a material selected from the group of materials consisting of metals claim 1 , metal alloys claim 1 , cermets claim 1 , ceramics claim 1 , composites claim 1 , and a combination thereof.8. The abrasive article of claim 1 , wherein the bonding layer comprises an average thickness of at least about 10% of an average particle size of the abrasive particles.9. The abrasive article of claim 1 , wherein the bonding layer comprises an average thickness of not greater than about 130% of the average particle size of ...

METHODS, WIRES, AND APPARATUS FOR SLICING HARD MATERIALS

Methods, wires, and apparatus for use in cutting (e.g., slicing) hard, brittle materials is provided. The wire can be a super-abrasive wire that includes a wire core and super-abrasive particles bonded to the wire core via a metal bonding layer. This wire, or another type of wire, can be used to slice workpieces useful for producing wafers. The workpieces can be aligned within a holder to produce wafers using the device and methods presently provided. The holder rotates about its central axis, which translates to workpieces moving in orbit around this axis. A single abrasive wire, or multiple turns of wire stretched tightly between wire guides, is then contacted with the rotating holder to slice the workpieces. 120.-. (canceled)21. An apparatus for slicing workpieces into wafers , the apparatus comprising:an abrasive wire passing around a pair of primary wire guides to create a cutting wire zone having movement of the abrasive wire in a first direction; anda rotatable holder configured to (i) hold at least two workpieces, and (ii) contact the cutting wire zone, wherein rotation of the holder about a center axis creates a tangential direction of movement of the holder opposite to the first direction.22. The apparatus of claim 21 , wherein the cutting wire zone comprises a plurality of cutting segments formed by winding the abrasive wire about primary wire guides at least once.23. The apparatus of claim 21 , wherein the holder is configured to hold the at least two workpieces such that the center axis of the holder is spaced apart from a center axis of each of the workpieces.24. The apparatus of claim 21 , wherein the abrasive wire comprises:a wire core;super-abrasive particles disposed around the wire core, the super-abrasive particles (i) being plated with a solderable metal material comprising at least one of tin, copper, lead, indium, silver, or bismuth, or (ii) consisting essentially of unplated diamond, boron nitride, alumina, silicon carbide, or a mixture ...

Transparent material processing with an ultrashort pulse laser

Methods for ultrashort pulse laser processing of optically transparent materials. A method for scribing transparent materials uses ultrashort laser pulses to create multiple scribe features with a single pass of the laser beam across the material, with at least one of the scribe features being formed below the surface of the material. Slightly modifying the ultrashort pulse laser processing conditions produces sub-surface marks. When properly arranged, these marks are clearly visible with side-illumination and not clearly visible without side-illumination. In addition, a method for welding transparent materials uses ultrashort laser pulses to create a bond through localized heating. The ultrashort pulse duration causes nonlinear absorption of the laser radiation, and the high repetition rate of the laser causes pulse-to-pulse accumulation of heat within the materials.

CARRIER FOR A SILICON BLOCK, CARRIER ARRANGEMENT HAVING SUCH A CARRIER AND PROCESS FOR PRODUCING SUCH A CARRIER ARRANGEMENT

A carrier () for a silicon block () is designed to be firmly connected as part of a carrier arrangement (), together with a lower carrier part (), to the silicon block (), and to be moved together therewith for machining by sawing, cleaning or the like. The underside of the carrier (), which points towards the silicon block (), has a plurality of channels (), as does the lower carrier part () bonded thereto, the channels () in each case lying one above another. Water is introduced into the channels () in the carrier () from above and can run through sawing slots in the lower carrier part () between the wafers of the sawn-up silicon block () for cleaning purposes. 1. A carrier for a silicon block , the carrier forming part of a carrier arrangement and being designed to be connected fixedly to the silicon block and to be moved , together with the silicon block , for machining , wherein the carrier comprises a plurality of depressions , channels or indentations on its underside to point towards the silicon block.2. The carrier according to claim 1 , wherein the plurality of channels comprise parallel grooves provided in the underside of the carrier.3. The carrier according to claim 1 , wherein the underside is even claim 1 , with the exception of the depressions claim 1 , channels or indentions claim 1 , such that the carrier has an essentially uniform thickness.4. The carrier according to claim 1 , comprising fastening means on a top side of the carrier for fastening to a movement device.5. The carrier according to claim 1 , it wherein the carrier consists of metal.6. The carrier according to claim 1 , wherein the carrier consists essentially of a rectangular carrier plate which is formed in one piece.7. The carrier according to claim 1 , wherein the depressions claim 1 , channels or indentations or grooves are closed by perforated grids or plates so as to be liquid-permeable.8. The carrier according to claim 1 , wherein the depressions claim 1 , channels or ...

SURFACE TREATMENT METHOD OF POLISHING PAD AND POLISHING METHOD OF WAFER USING THE SAME

Provided is a surface treatment method of a polishing pad. The surface treatment method of the polishing pad includes locating a wafer on the polishing pad including a polishing material, supplying a polishing pad polishing material between the polishing pad and the wafer to expose the polishing material included in the polishing pad, and polishing the wafer using the exposed polishing material. 1. A surface treatment method of a polishing pad , the surface treatment method comprising:locating a wafer on the polishing pad comprising a polishing material;supplying a polishing pad polishing material between the polishing pad and the wafer to expose the polishing material comprised in the polishing pad; andpolishing the wafer using the exposed polishing material.2. The surface treatment method according to claim 1 , wherein the polishing material comprises a particle formed of a compound selected from the group consisting of cesium claim 1 , aluminum claim 1 , silicon claim 1 , zirconium oxide particles claim 1 , silicon carbide compound claim 1 , boron nitride claim 1 , diamond claim 1 , and combination thereof.3. The surface treatment method according to claim 1 , wherein the polishing pad polishing material comprises at least one of aluminum oxide claim 1 , cesium oxide claim 1 , or silicon oxide.4. The surface treatment method according to claim 1 , wherein the polishing pad has a patterned top surface.5. The surface treatment method according to claim 4 , wherein at least one square-shaped pattern claim 4 , ring-shaped pattern claim 4 , or spiral-shaped pattern is formed on the top surface of the polishing pad.6. A polishing method of a wafer claim 4 , the polishing method comprising:supplying a polishing pad polishing material on a first polishing pad comprising a first diamond particle to perform a first polishing process on a wafer;supplying the polishing pad polishing material on a second polishing pad comprising a second diamond particle to perform a second ...

Silicon wafer processing solution and silicon wafer processing method

A silicon-wafer processing fluid used for processing a silicon wafer contains a friction modifier containing a nitrogen-containing compound, pH of the nitrogen-containing compound being in a range from 2 to 8 when a mass ratio with water (i.e. nitrogen-containing compound/water) is 1/99. The nitrogen-containing compound is preferably a heterocyclic compound. The silicon-wafer processing fluid restrains an abrasion of abrasive grains rigidly attached to a wire and generation of hydrogen.

Systems For Controlling Surface Profiles Of Wafers Sliced In A Wire Saw

Systems are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid circulated in fluid communication with bearings supporting wire guides of the saw. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology.

LARGE ALUMINUM NITRIDE CRYSTALS WITH REDUCED DEFECTS AND METHODS OF MAKING THEM

Reducing the microvoid (MV) density in AlN ameliorates numerous problems related to cracking during crystal growth, etch pit generation during the polishing, reduction of the optical transparency in an AlN wafer, and, possibly, growth pit formation during epitaxial growth of AlN and/or AlGaN. This facilitates practical crystal production strategies and the formation of large, bulk AlN crystals with low defect densities—e.g., a dislocation density below 10cmand an inclusion density below 10cmand/or a MV density below 10cm. 138-. (canceled)39. A method of growing single-crystal AlN , the method comprising:{'sub': '2', 'providing in a crystal growth enclosure a vapor comprising Al and N; and'}{'sup': −1', '−1, 'depositing the vapor as single-crystalline AlN while pushing the crystal growth enclosure at a rate less than an intrinsic growth rate of the single-crystalline AlN, the single-crystalline AlN having at least one of (i) an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3,000 nm or (ii) an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4,500 nm.'}40. The method of claim 39 , wherein the single-crystalline AlN has an optical absorption coefficient of less than 5 cmat all wavelengths in a range spanning 500 nm to 3 claim 39 ,000 nm.41. The method of claim 40 , wherein the single-crystalline AlN has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 40 ,500 nm.42. The method of claim 39 , wherein the single-crystalline AlN has an optical absorption coefficient of less than 1 cmat any wavelength in a range spanning 210 nm to 4 claim 39 ,500 nm.43. The method of claim 39 , wherein the single-crystalline AlN has a microvoid density less than approximately 10cm.44. The method of claim 39 , further comprising claim 39 , following deposition claim 39 , the step of slicing a AlN wafer from the single-crystalline AlN.45. ...

Systems and Methods For Controlling Surface Profiles Of Wafers Sliced In A Wire Saw

Systems and methods are disclosed for controlling the surface profiles of wafers cut in a wire saw machine. The systems and methods described herein are generally operable to alter the nanotopology of wafers sliced from an ingot by controlling the shape of the wafers. The shape of the wafers is altered by changing the temperature and/or flow rate of a temperature-controlling fluid that comes in contact with the ingot. Different feedback systems can be used to determine the temperature of the fluid necessary to generate wafers having the desired shape and/or nanotopology. 1. A system for controlling the surface profile of wafers sliced from an ingot in a wire saw , the wire saw including a wire guide supporting wires , the system comprising:a containment box positioned vertically beneath the wires and configured to contain a slurry; anda slurry temperature control system configured to circulate slurry through the containment box.2. The system of claim 1 , wherein the containment box is configured to immerse at least a portion of the ingot in the slurry after the at least a portion of the ingot passes through the wires.3. The system of claim 2 , wherein the containment box is configured to immerse the at least a portion of the ingot such that defects in the surface profile of the sliced wafers are reduced.4. The system of claim 2 , wherein the containment box is configured to immerse the at least a portion of the ingot such that a temperature of the at least a portion is decreased.5. The system of claim 1 , wherein the containment box comprises:a slurry inlet configured to receive slurry from the slurry temperature control system; anda slurry outlet configured to channel slurry from the containment box to the slurry temperature control system.6. The system of claim 1 , wherein the slurry temperature control system comprises:a slurry tank;a slurry feed pump configured to channel slurry from the slurry tank to the containment box;a heat exchanger; anda slurry ...

Processing method for wafer

A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.

WAFER CUTTING METHOD AND DEVICE

A device for cutting a wafer provided with grooves on its upper surface having its lower surface supported by a flexible film secured to a frame. This device includes a system for locating the grooves and for positioning the frame with respect to a cutting system, and setting means for positioning the wafer in front of the locating system so that the located area is at a determined distance from the locating system. 1. A method for cutting a wafer , comprising:making at least a portion of the wafer more planar by pressing a bearing element against a second surface of the wafer, the portion of the wafer being proximate a first groove on a first surface of the wafer;aligning the wafer with a cutting blade so that the cutting blade is located proximate the second surface of the wafer that is opposite the first groove; andcutting the wafer along the first groove.2. The method of claim 1 , wherein cutting the wafer along the first groove comprises pressing a cutting blade on the second surface opposite the first groove and pressing a U-shaped member on the first surface outwardly of the first groove.3. The method of claim 1 , wherein the bearing element is flexible.4. The method of claim 1 , further comprising pressing a brush against the first surface of the wafer.5. The method of claim 1 , wherein making at least the portion of the wafer more planar by pressing a bearing element against the second surface of the wafer comprises causing the portion of the first surface of the wafer to be a particular distance from a locating system configured to align the wafer with the cutting blade.6. The method of claim 1 , wherein aligning the wafer with the cutting blade comprises moving the wafer relative to the cutting blade.7. A device for cutting a wafer claim 1 , comprising:a cutting system;a locating system configured to locate grooves on an upper surface of the wafer and position the wafer with respect to the cutting system; andmeans for making at least a portion of the ...

GEMSTONE PRODUCTION FROM CVD DIAMOND PLATE

A method of producing gemstones includes obtaining a plate of chemical vapor deposition formed diamond. The plate is cut into a plurality of geometrically optimized preforms. The preforms may be finished and cut into diamond gemstones. 1obtaining a plate of chemical vapor deposition formed diamond;cutting the plate into a plurality of geometrically optimized preforms; andfinishing the preforms into cut diamond gemstones.. A method comprising: This application is a continuation of U.S. Patent Application No. 12/463,142 (issuing as U.S. Pat. No. 8,342,164 on Jan. 1, 2013), filed May 8, 2009, and entitled “GEMSTONE PRODUCTION FROM CVD DIAMOND PLATE,” which claims priority to U.S. Provisional Application Ser. No. 61/051,859, filed May 9, 2008, and entitled “GEMSTONE PRODUCTION FROM CVD DIAMOND PLATE,” the entire disclosure of which is incorporated by reference herein.Natural gemstones, such as diamonds have been mined for centuries. The raw mined diamond may be irregularly shaped, and may be cut to optimize the size and shape of a finished gemstone. Much skill goes into selecting the cut of a raw stone and the actual process of cutting the stone to a desired shape.In natural or high temperature, high pressure manufactured stones, the yield of the gemstone into finished cut stone is dictated by the shape and orientation of the unfinished stone, which can range from perfect crystals to irregular shapes. This results in an average yield of gemstones of less than 50 percent and usually about 30%.In the following description, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration specific embodiments which may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that structural, logical and electrical changes may be made without departing from the scope of the present ...

APPARATUS AND METHOD FOR SIMULTANEOUSLY SLICING A MULTIPLICITY OF SLICES FROM A WORKPIECE

A method and apparatus are used to simultaneously slice a multiplicity of slices from a workpiece. The workpiece is held with a feed device so as to position an axis of the workpiece parallel to axes of wire guide rolls of a wire saw and is moved from above through a web of the wire saw. A slurry is supplied as abrasive to wire sections of the web while the wire sections are moved relative to the workpiece. The relative movement guides the wire sections from an entry side to an exit side through the workpiece. A coolant is sprayed from the side and below through nozzles into slicing gaps in the workpiece. The nozzles are arranged below the web parallel to the axes of the wire guide rolls. The coolant is sprayed into the slicing gaps through a nozzle situated opposite the entry side of the respective wire section. 1. An apparatus for simultaneously slicing a multiplicity of slices from a workpiece , the apparatus comprising:at least two cylindrical wire guide rolls each having an axis and being disposed horizontally and parallel with respect to one another and mounted rotatably about their respective axes, each wire guide roll having grooves;a feed device;wire that is guided in the grooves around the wire guide rolls so as to form a horizontal web composed of a multiplicity of wire sections running parallel to one another and in one plane between the wire guide rolls;first nozzles disposed above the wire guide rolls and configured to spray an abrasive onto the wire sections; andsecond nozzles disposed below the web parallel to the axes of the wire guide rolls and configured to spray a coolant into slicing gaps of the workpiece from the side and from below.2. A method for simultaneously slicing a multiplicity of slices from a workpiece , the method comprisingholding the workpiece with a feed device so as to position an axis of the workpiece parallel to axes of wire guide rolls of a wire saw;moving the workpiece, using the feed device, perpendicularly from above ...

COOLING AND/OR LUBRICATING FLUIDS FOR WAFER PRODUCTION

The invention relates to the use of modified polyglycols for production of cooling and/or lubricating fluids, to novel cooling and/or lubricating fluids, to the use of the cooling and/or lubricating fluids in the removal of material, especially in the cutting of wafers, and to wafers produced with the aid of the cutting fluid. 1. Use of compounds of the general formula I{'br': None, 'sup': 1', '2, 'sub': x', 'y', 'z, 'R[O(EO)(AO)R]\u2003\u2003(I)'}with the following definitions:{'sup': '1', 'Ris a z-valent alkyl radical having 1 to 10 carbon atoms,'}{'sup': '2', 'Ris hydrogen and/or a monovalent alkyl radical having 1 to 10 carbon atoms,'}EO is an ethyleneoxy radical,AO is an alkyleneoxy radical having 3 to 10 carbon atoms,x is a number from 1 to 8, especially 2 to 8,y is a number from 0.5 to 6, especially 1 to 4,z is a number from 1 to 6, especially 1 to 3,for production of cooling and/or lubricating fluids for removal of material, especially for sawing of wafers with a wire saw, with reduced water absorption.2. Use according to claim 1 , characterized in that claim 1 , in the formula I claim 1 ,{'sup': '1', 'Ris a z-valent alkyl radical having 1 to 6 carbon atoms, especially butyl.'}3. Use according to or claim 1 , characterized in that the contact angle of the cooling and/or lubricating fluids on V2A steel at 25° C. after one second is 10 to 40° claim 1 , preferably 10 to 35°.4. Use according to to claim 1 , characterized in that the viscosity of the cooling and/or lubricating fluids at 20° C. is preferably 15 to 120 mPas claim 1 , more preferably 20 to 110 mPas.5. Use according to any of to claim 1 , characterized in that the wafer comprises a semi-conductive material claim 1 , especially silicon claim 1 , and especially consists of silicon.6. Use according to any of to claim 1 , characterized in that the cooling and/or lubricating fluid is used in a fixed abrasive wafer cutting process claim 1 , especially using a diamond wire saw.7. Use according to any of to ...

Wire-Type Cutting Device

According to an embodiment, a wire-type cutting device includes, a main roller portion includes a main roller on which a cutting wire is stretched, and a reel which delivers or takes up the wire, the reel and the main roller being disposed having the same axial direction and capable of being arranged so that the wire between the reel and the main roller is substantially perpendicular to the axial direction.

METHOD AND APPARATUS FOR SCRIBING SILICON CARBIDE PLATE

A scribing apparatus includes a horizontal table on which a silicon carbide plate is fixed under vacuum suction; a feed screw and a Y-axis control motor for moving the table along a pair of guide rails under scribe numerical control; a guide rail device body installed above the table along an X-axis direction; a carriage mounted on the guide rail device body so as to move in the X-axis direction while being guided; a feed screw and an X-axis control motor for moving the carriage in the X-axis direction under numerical control; and a scribe head installed on the carriage 1. A silicon carbide plate scribing method comprising the steps of: first scribing a dent at a scribe starting point at the time of a scribing start; and starting scribing from within said dent.2. A silicon carbide plate scribing method comprising the steps of: first causing a cutter wheel to rotate or swing in a state in which said cutter wheel is brought into pressure contact with a silicon carbide plate at a scribe starting point at the time of a scribing start , to thereby scribe a dent at the starting point; and subsequently starting scribing from within said dent.3. A silicon carbide plate scribing method comprising the steps of: first causing a diamond scribe stylus provided separately from a cutter wheel to rotate or swing in a state in which said diamond scribe stylus is brought into pressure contact with a silicon carbide plate at a scribe starting point at the time of a scribing start , to thereby scribe a dent; subsequently causing said cutter wheel to be brought into pressure contact with the silicon carbide plate at the dent formed; and starting scribing from within said dent.4. A scribing apparatus comprising: a scribe head having a cutter wheel and adapted to scribe a scribe line by rolling said cutter wheel in a state of being pressure contact with a silicon carbide plate; and a diamond stylus unit which has a diamond scribe stylus and causes said diamond scribe stylus to be brought ...

Large Diameter, High Quality SiC Single Crystals, Method and Apparatus

A method and system of forming large-diameter SiC single crystals suitable for fabricating high crystal quality SiC substrates of 100, 125, 150 and 200 mm in diameter are described. The SiC single crystals are grown by a seeded sublimation technique in the presence of a shallow radial temperature gradient. During SiC sublimation growth, a flux of SiC bearing vapors filtered from carbon particulates is substantially restricted to a central area of the surface of the seed crystal by a separation plate disposed between the seed crystal and a source of the SiC bearing vapors. The separation plate includes a first, substantially vapor-permeable part surrounded by a second, substantially non vapor-permeable part. The grown crystals have a flat or slightly convex growth interface. Large-diameter SiC wafers fabricated from the grown crystals exhibit low lattice curvature and low densities of crystal defects, such as stacking faults, inclusions, micropipes and dislocations.

METHOD FOR MANUFACTURING HEXAGONAL SEMICONDUCTOR PLATE CRYSTAL

A method of efficiently manufacturing a hexagonal semiconductor plate crystal with small warpage is provided. The method of manufacturing a hexagonal semiconductor plate crystal is a method of manufacturing a hexagonal semiconductor plate crystal by cutting a hexagonal semiconductor crystal using a crystal cutting wire, wherein the hexagonal semiconductor crystal is cut by causing the crystal cutting wire to move relative to the hexagonal semiconductor crystal so as to satisfy the conditions of 25°<α≦90° and β=90°±5° where α represents an angle formed by the c axis of the hexagonal semiconductor crystal and the normal line of the crystal face cut out by the wire and β represents an angle formed by a reference axis, which is obtained by perpendicularly projecting the c axis of the hexagonal semiconductor crystal to the crystal face cut out by the wire, and a cutting direction. 1. A method of manufacturing a hexagonal semiconductor plate crystal by cutting a hexagonal semiconductor crystal using a crystal cutting wire , [{'br': None, '25°<α≦90°\u2003\u2003Expression (A); and'}, {'br': None, 'β=90°±5°\u2003\u2003Expression (B)'}], 'wherein the hexagonal semiconductor crystal is cut by causing the crystal cutting wire to move relative to the hexagonal semiconductor crystal so as to satisfy conditions of Expressions (A) and (B)where α represents an angle formed by a c axis of the hexagonal semiconductor crystal and a normal line of a crystal face cut out by the wire, and β represents an angle formed by a reference axis, which is obtained by perpendicularly projecting the c axis of the hexagonal semiconductor crystal to the crystal face cut out by the wire, and a cutting direction.2. The method of manufacturing a hexagonal semiconductor plate crystal according to claim 1 , wherein a moving speed of the crystal cutting wire in the cutting direction is equal to or more than 1 mm/h.3. The method of manufacturing a hexagonal semiconductor plate crystal according to claim 1 , ...

Mechanical scoring and separation of strengthened glass

A strengthened glass sheet is separated into undamaged sheet segments by mechanically scribing one or more vent lines of controlled depth into the sheet surface, the depths of the scribed lines being insufficient to effect sheet separation, and then applying a uniform bending moment across the vent lines to effect separation into multiple sheet segments, the vent lines being scribed from crack initiation sites comprising surface indentations formed proximate to the edges of the glass sheet.

RECOVERY OF SILICON VALUE FROM KERF SILICON WASTE

The present invention is for the recovery of maximum silicon value of kerf silicon waste, produced during the manufacture of silicon wafers by wire saw, diamond saw and chemical mechanical polishing, as high purity metallurgical silicon. This recovery is achieved by a process scheme that effects an initial removal of minor extrinsic metallic impurities but not the major silicon compound impurities, and followed, preferentially, by a direct metallurgical process to form elemental silicon. The recovered silicon is for use as feedstock for polysilicon manufacturing, as high purity polysilicon for PV application, and in metallurgical alloy manufacture. 1. A method of converting kerf silicon waste to high purity kerf-derived Metallurgical Grade silicon comprising:a. providing a kerf silicon waste comprising silicon (Si) and an abrasive reducing agent selected from the group consisting of silicon carbide, carbon and mixtures thereof;b. introducing to the kerf silicon waste a desired amount of silicon oxide in proportion to the amount of abrasive reducing agent in the kerf silicon waste to provide a kerf material mixture;c. treating the kerf material mixture to reduce the silicon oxide to silicon and thereby consume the reducing agent in the kerf material mixture and provide a kerf-derived Metallurgical Grade silicon.2. The method of claim 1 , further comprising separating additional impurities from the kerf silicon waste using one or more of the following processes:a. reducing a carrier fluid from the kerf silicon waste;b. reducing metallic impurities from the kerf silicon waste; andc. washing and drying the kerf silicon waste.3. The method of claim 1 , the carbon content of the kerf-derived Metallurgical Grade silicon is less than 100 ppm.4. The method of claim 1 , wherein the silicon oxide comprises silica.5. The method according to claim 1 , wherein introducing to the kerf silicon waste a desired amount of silicon oxide comprises one or more of the following:a. ...

APPARATUS FOR SLICING INGOT

Provided is an apparatus for slicing an ingot. The apparatus for slicing the ingot includes a mounting part on which the ingot is mounted, a wire saw disposed under the mounting part, a slurry supply part supplying slurry from an upper side of the wire saw, and a slurry blocking part disposed on the mounting part. The slurry blocking part includes a fixing part coupled to one side of the mounting part and a slurry collection part to which a central portion thereof is coupled to a lower portion of the fixing part. 1. An apparatus for slicing an ingot , the apparatus comprising:a mounting part on which the ingot is mounted;a wire saw disposed under the mounting part;a slurry supply part supplying slurry from an upper side of the wire saw; and 'a fixing part coupled to one side of the mounting part; and a slurry collection part to which a central portion thereof is coupled to a lower portion of the fixing part.', 'a slurry blocking part disposed on the mounting part, wherein the slurry blocking part comprises2. The apparatus according to claim 1 , wherein the slurry blocking part further comprises a slurry induction part inclined upward from one side of the slurry collection part toward the outside.3. The apparatus according to claim 2 , wherein the slurry blocking part further comprises a blocking part extending upward from the other side of the slurry collection part.4. The apparatus according to claim 2 , wherein the slurry blocking part further comprises a discharge part inclined downward from a side surface of the slurry collection part toward the outside.5. The apparatus according to claim 1 , wherein the fixing part comprises:a first fixing part fixed to a side surface of the mounting part; anda second fixing part vertically coupled to the first fixing part, the second fixing part being fixed to an under surface of the mounting part.6. The apparatus according to claim 1 , wherein the slurry collection part is coupled to a lower portion of the first fixing part ...

METHOD FOR SIMULTANEOUSLY SLICING A MULTIPLICITY OF WAFERS FROM A CYLINDRICAL WORKPIECE

A method for simultaneously slicing a multiplicity of wafers from a substantially circular-cylindrical workpiece that is connected to a sawing strip includes executing a relative movement between the workpiece and a wire gang of a wire saw with the aid of a forward feed device with a defined forward feed rate so as to slice the wafers. The forward feed rate is varied through the course of the method and includes being set to a value vat a cutting depth of 50% of the workpiece diameter. Subsequently, the forward feed rate is to a value v>1.15×vas the forward feed rate passes through a local maximum. The forward feed rate is set to a value vv. 1. A method for simultaneously slicing a multiplicity of wafers from a substantially circular-cylindrical workpiece that is connected to a sawing strip , the method comprising:executing a relative movement between the workpiece and a wire gang of a wire saw in a direction perpendicular to a longitudinal axis of the workpiece with the aid of a forward feed device with a defined forward feed rate, by which the workpiece is guided through the wire gang so as to be sliced into a plurality of wafers; and [{'sub': '1', 'setting the forward feed rate to a value vat a cutting depth of 50% of the workpiece diameter;'}, {'sub': 2', '1, 'subsequently, setting the forward feed rate to a value v>1.15×vas the forward feed rate passes through a local maximum;'}, {'sub': 3', '1, 'subsequently, setting the forward feed rate to a value vv.'}], 'varying the forward feed rate through the course of the method including2. The method as recited in claim 1 , wherein the forward feed rate has a local minimum at a cutting depth of from 40 to 60% of the workpiece diameter.3. The method as ...

METHOD FOR RESUMING OPERATION OF WIRE SAW AND WIRE SAW

The present invention provides a method of resuming operation of a wire saw in which slicing of a workpiece is suspended and then resumed, including slicing the workpiece while detecting a traveling direction and a traveling speed of the reciprocating wire and recording them chronologically; and resuming the slicing while controlling the traveling direction and a traveling time in the traveling direction of the wire on a basis of a wire traveling history recorded until the suspending of the slicing of the workpiece such that the reciprocating cycle of the wire becomes continuous between before the suspending and after the resuming of the slicing of the workpiece. This method enables the slicing to be completed while the nanotopography of the sliced wafer is surely prevented from degrading, even when the slicing of the workpiece with a wire saw is suspended due to, for example, breaking of the wire. 1. A method of resuming operation of a wire saw in which slicing of a workpiece is suspended and then resumed , the operation including processes of: imparting axial reciprocating motion having a predetermined reciprocating cycle to a wire wound around a plurality of grooved rollers; and slicing the workpiece into wafers by moving the workpiece relatively downwardly to press the workpiece against the reciprocating wire and to feed the workpiece with the workpiece cut into while supplying a slicing slurry to the wire , the method comprising the steps of:slicing the workpiece while detecting a traveling direction and a traveling speed of the reciprocating wire and recording chronologically the traveling direction and the traveling speed; andresuming the slicing while controlling the traveling direction and a traveling time in the traveling direction of the wire on a basis of a wire traveling history recorded until the suspending of the slicing of the workpiece such that the reciprocating cycle of the wire becomes continuous between before the suspending and after the ...

ABRASIVE ARTICLE AND METHOD OF FORMING

An abrasive article includes a substrate comprising an elongated body, a first type of abrasive particle overlying the substrate, a bonding layer overlying the first type of abrasive particle, and a lubricious material overlying or integrated within the bonding layer. 133-. (canceled)34. An abrasive article comprising:a substrate comprising an elongated body;a first type of abrasive particle overlying the substrate;a bonding layer overlying the first type of abrasive particle; anda lubricious material overlying or integrated within the bonding layer.35. The abrasive article of claim 34 , wherein the lubricious material overlies the substrate.36. The abrasive article of claim 34 , wherein the lubricious material is a continuous layer.37. The abrasive article of claim 34 , wherein the lubricious material is a non-continuous layer.38. The abrasive article of claim 34 , wherein the lubricious material comprises discrete particles of a lubricious material.39. The abrasive article of claim 38 , wherein the discrete particles are contained within the bonding layer.40. The abrasive article of claim 34 , wherein the lubricious material is in direct contact with the bonding layer.41. The abrasive article of claim 34 , wherein the lubricious material is at least partially contained within the coating layer.42. The abrasive article of claim 34 , wherein the lubricious material is contained within a first particle coating overlying the first type of abrasive particle.43. The abrasive article of claim 34 , wherein the lubricious material comprises a material selected from the group consisting of an organic material claim 34 , an inorganic material claim 34 , a natural material claim 34 , a synthetic material claim 34 , and a combination thereof.44. The abrasive article of claim 34 , wherein the lubricious material comprises a fluoropolymer.45. The abrasive article of claim 34 , wherein the lubricious material comprises polytetrafluoroethylene (PTFE).46. The abrasive article of ...

Hearts & Arrows SiC Gemstone

The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) which may produce a “Hearts & Arrows” reflection pattern. 1. A method of cutting an SiC gemstone , comprising:cutting a girdle outline of the SiC gemstone;cutting a main facet on a pavilion side of the SiC gemstone at an angle of approximately 40.70 degrees;cutting a girdle facet on the pavilion side of the SiC gemstone at an angle of approximately 41.84 degrees;cutting a main facet on a crown side of the SiC gemstone at an angle of approximately 31.91 degrees;cutting a girdle facet on the crown side of the SiC gemstone at an angle of approximately 39.00 degrees;cutting a star facet on the crown side of the SiC gemstone at an angle of approximately 21.46 degrees; andcutting a table on the crown side of the SiC gemstone.28. The method of claim wherein the cutting is performed by a robotic cutting machine.38. The method of claim further comprising polishing the facets on the crown side of the SiC gemstone.48. The method of claim further comprising polishing the facets on the pavilion side of the SiC gemstone. This disclosure relates to a way to produce a “Hearts & Arrows” reflection pattern in a transparent Silicon Carbide (“SiC”) gemstone.Generally, facets on precious and semi-precious gemstones are cut so as to provide brilliance to these gemstones in an economical manner. Gemstones may also be cut to provide reflections with patterns visible.The instant application discloses, among other things, a specific set of cutting proportions tailored for the optical characteristics of Silicon Carbide (“SiC”) which may produce a “Hearts & Arrows” reflection pattern.Silicon Carbide (SiC) is a compound of silicon and carbon. It exists in a number of crystalline forms, often grouped as polytypes of similar structures. Three common polytypes are 3C (β), 4H, and 6H (α). 3C (β) has a cubic crystal structure; 4H and 6H (α) ...

Abrasive Article and Method Of Forming

An abrasive article including a substrate having an elongated body, a tacking layer overlying the substrate, a first type of abrasive particle overlying the tacking layer, a second type of abrasive particle different than the first type of abrasive particles overlying the tacking layer, and a bonding layer overlying at least a portion of one of the first type of abrasive particle and the second type of abrasive particle and the tacking layer. 171-. (canceled)72. An abrasive article comprising:a substrate;a tacking layer overlying the substrate;a first type of abrasive particle overlying the tacking layer;a second type of abrasive particle different than the first type of abrasive particles overlying the tacking layer; anda bonding layer overlying at least a portion of one of the first type of abrasive particle and the second type of abrasive particle and the tacking layer.73. The abrasive article of claim 72 , wherein the substrate comprises an elongated body having an aspect ratio of length:width of at least about 10000:1.74. The abrasive article of claim 72 , wherein the substrate comprises high strength steel wire and wherein the substrate comprises a break strength of at least about 3 GPa.75. The abrasive article of claim 72 , further comprising a barrier layer disposed between the peripheral surface of the substrate and the tacking layer.76. The abrasive article of claim 75 , wherein the barrier layer comprises an average thickness of not greater than about 10 microns.77. The abrasive article of claim 72 , wherein the tacking layer is in direct contact with a surface of the substrate.78. The abrasive article of claim 72 , wherein the tacking layer comprises a metal selected from the group of metals consisting of lead claim 72 , silver claim 72 , copper claim 72 , zinc claim 72 , tin claim 72 , indium claim 72 , titanium claim 72 , molybdenum claim 72 , chromium claim 72 , iron claim 72 , manganese claim 72 , cobalt claim 72 , niobium claim 72 , tantalum claim ...

ABRASIVE ARTICLE AND METHOD OF FORMING

An abrasive article includes a substrate, a tacking layer overlying the substrate, a first type of abrasive particle overlying the tacking layer, at least about 5% and not greater than about 99% of a total amount of the first type of abrasive particle has an exposed surface, and a bonding layer overlying at least a portion of the abrasive particles and the tacking layer. 158-. (canceled)59. An abrasive article comprising:a substrate;a tacking layer comprising a matte tin layer overlying the substrate;a first type of abrasive particle overlying the tacking layer;a bonding layer overlying at least a portion of the abrasive particles and the tacking layer.60. The abrasive article of claim 59 , wherein the substrate comprises an elongated body having an aspect ratio of length:width of at least about 10000:1.61. The abrasive article of claim 59 , further comprising a barrier layer in direct contact with a peripheral surface of the substrate.62. The abrasive article of claim 59 , wherein the tacking layer comprises a metal selected from the group of metals consisting of lead claim 59 , silver claim 59 , copper claim 59 , zinc claim 59 , tin claim 59 , indium claim 59 , titanium claim 59 , molybdenum claim 59 , chromium claim 59 , iron claim 59 , manganese claim 59 , cobalt claim 59 , niobium claim 59 , tantalum claim 59 , tungsten claim 59 , palladium claim 59 , platinum claim 59 , gold claim 59 , ruthenium claim 59 , and a combination thereof.63. The abrasive article of claim 59 , wherein the tacking layer comprises a solder material having a melting point of not greater than about 450° C.64. The abrasive article of claim 59 , wherein the tacking layer consists essentially of matte tin.65. The abrasive article of claim 59 , wherein the first type of abrasive particle comprises a material selected from the group of materials consisting of oxides claim 59 , carbides claim 59 , nitrides claim 59 , borides claim 59 , oxynitrides claim 59 , oxyborides claim 59 , diamond claim ...

Methods and apparatus for separating a substrate

This invention relates to slicing a thin semiconductor substrate from side wall into two substrates of half thickness. The substrate slicing process involves a laser irradiation step. The apparatus for substrate slicing comprises two opposite-facing substrate chucks, with a gap in between for the substrate to pass through. 1. An apparatus adapted to handle a semiconductor wafer , comprising:a first chuck;a second chuck spaced apart from the first chuck;an opening in between the first chuck and the second chuck such that the semiconductor wafer can pass through; anda mechanism for separating the semiconductor wafer into at least two pieces as the semiconductor wafer moves through the opening, wherein each of the two pieces comprises substantially the same surface area of the semiconductor wafer prior to the separation.2. An apparatus according to claim 1 , wherein said first and second chucks are substantially mirror images to each other in design.3. An apparatus according to claim 1 , wherein said first and second chucks are designed claim 1 , positioned and operated such that the semiconductor wafer does not make contact with the chucks when the semiconductor wafer moves through the opening.4. An apparatus according to claim 1 , wherein a portion of the first chuck is in a general alignment parallel to a portion of the second chuck as the semiconductor wafer moves through the apparatus before being separated.5. An apparatus according to claim 1 , wherein the opening increases as the semiconductor wafer moves through the apparatus after being separated.6. An apparatus according to further comprising a laser irradiation system adapted to illuminate the side wall of the semiconductor wafer as the semiconductor wafer moves through the opening.7. An apparatus according to claim 6 , wherein the laser irradiation system comprises laser irradiation sensor(s).8. An apparatus according to further comprising a closed-loop control system to align the opening to the laser ...

BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD

The present invention discloses a semi-insulating wafer of GaAlInN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 10ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 10cm. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers. 1. A semi-insulating wafer comprising GaAlInN (0≦x≦1 , 0≦x+y≦1) having a surface area more than 10 mmand thickness more than 200 microns wherein the GaAlInN is doped with bismuth.2. A semi-insulating wafer of wherein the resistivity of the wafer is greater than 10ohm-cm.3. A semi-insulating wafer of wherein the wafer is fabricated by slicing a bulk ingot of GaAlInN (0≦x≦1 claim 1 , 0≦x+y≦1) grown in supercritical ammonia.4. A semi-insulating wafer of wherein the wafer comprises highly-oriented poly or single crystalline GaAlInN (0≦x≦1 claim 1 , 0≦x+y≦1) with a density of line defects and grain boundaries less than 10cm.5. A semi-insulating wafer of wherein the wafer is GaN.6. A semi-insulating wafer of in which the GaAlInN doped with bismuth has a resistivity greater than about 10ohm-cm.7. A semi-insulating wafer of wherein the GaAlInN doped with bismuth has a density of dislocations and/or grain boundaries is less than 10cm.8. A semi-insulating wafer of wherein the GaAlInN doped with bismuth is a layer upon a group III-nitride substrate.9. A semi-insulating wafer of wherein the wafer comprises claim 1 , throughout the wafer claim 1 , GaAlInN doped with bismuth.10. An electronic claim 1 , optical claim 1 , or opto-electronic device formed on a wafer of .11. A method of growing a bismuth doped group III nitride bulk crystal having a surface area greater than 10 mmand thickness greater than 200 microns comprising:a. ...

METHODS AND SYSTEMS FOR IMAGING AND CUTTING SEMICONDUCTOR WAFERS AND OTHER SEMICONDUCTOR WORKPIECES

Methods and systems for imaging and cutting semiconductor wafers and other microelectronic device substrates are disclosed herein. In one embodiment, a system for singulating microelectronic devices from a substrate includes an X-ray imaging system having an X-ray source spaced apart from an X-ray detector. The X-ray source can emit a beam of X-rays through the substrate and onto the X-ray detector, and X-ray detector can generate an X-ray image of at least a portion of the substrate. A method in accordance with another embodiment includes detecting spacing information for irregularly spaced dies of a semiconductor workpiece. The method can further include automatically controlling a process for singulating the dies of the semiconductor workpiece, based at least in part on the spacing information. For example, individual dies can be singulated from a workpiece via non-straight line cuts and/or multiple cutter passes. 1. A system for singulating microelectronic devices from a microelectronic substrate , the microelectronic substrate having an infrared inhibiting layer covering at least a portion of one side of the microelectronic substrate , the system comprising:an X-ray source configured to emit X-rays;an X-ray detector spaced apart from the X-ray source, wherein the X-ray detector is configured to receive at least a portion of the X-rays from the X-ray source when the infrared inhibiting layer of the microelectronic substrate is positioned between the X-ray source and the X-ray detector; anda cutting device configured to respond to operating signals based at least in part on X-ray image information received from the X-ray detector, the operating signals controlling the path of the cutting device as the cutting device cuts the microelectronic substrate into the individual dies.2. The system of wherein the cutting device moves independently of the X-ray source.3. The system of claim 1 , further comprising a wafer holder configured to support the microelectronic ...

Plane orientation of crystalline structures

Systems and method for creating crystalline parts having a desired primary and secondary crystallographic orientations are provided. One embodiment may take the form of a method of manufacturing a part having a crystalline structure. The method includes melting aluminum oxide and drawing the melted aluminum oxide up a slit. Additionally, the method includes orienting the seed crystal relative to a growth apparatus such that a crystalline structure grows having a desired primary plane and a desired secondary plane orientation. Moreover, the method includes pulling the crystal as it forms to create a ribbon shaped crystalline structure and cutting a part from the crystalline structure.

WAFER SAWING SYSTEM

A wafer sawing system and a method of sawing an ingot in a wafer sawing system are described. The system includes an ingot input module, an ingot output module, two or more wire sawing chambers that each comprise: two wire guide cylinders, at least one wire disposed across both of the wire guide cylinders, a support table that is configured to receive a single ingot, and an ingot positioning system that is configured to urge the single ingot disposed on the support table against the at least one wire, and a robot that is configured to transfer the single ingot between the ingot input module, at least one of the two or more wire sawing chambers and the ingot output chamber. 1. A wafer sawing system , comprising:an ingot input module;an ingot output module;two or more wire sawing chambers that each comprise: two wire guide cylinders;at least one wire disposed across both of the wire guide cylinders;a support table that is configured to receive a single ingot;and an ingot positioning system that is configured to urge the single ingot disposed on the support table against the at least one wire; anda robot that is configured to transfer the single ingot between the ingot input module, at least one of the two or more wire sawing chambers and the ingot output chamber.2. The wafer sawing system of claim 1 , wherein the ingot input module claim 1 , ingot output module and the two or more wire sawing chambers are transferrably coupled a transfer chamber claim 1 , and wherein the robot is coupled to the transfer chamber.3. The wafer sawing system of claim 1 , further comprising a rinsing station.4. The wafer sawing system of claim 1 , wherein the length of the two wire guide cylinders is 310 mm to 370 mm.5. The wafer sawing system according to claim 1 , wherein the two or more sawing chambers are configured for sawing one ingot claim 1 , particularly one ingot provided a load of 310 mm to 370 mm length claim 1 , at a time.6. The wafer sawing system according to claim 1 , ...

METHOD OF GROWING GROUP III NITRIDE CRYSTALS

The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth. 1. A method of making a group III nitride composed of GaAlInN (0≦x≦1 , 0≦x+y≦1) comprising(a) growing a first group III nitride crystal on a first face and growing a second group III nitride crystal on a second face of a first-generation seed to form a first ingot of group III nitride;(b) slicing the first ingot into a first, second, and third wafer;wherein the first wafer includes the first-generation seed, and the first wafer has a thickness greater than a thickness of each of the second wafer and the third wafer, and wherein the thickness of the first wafer containing the first-generation seed is large enough to avoid breaking of the first wafer.2. A method according to and further comprising growing a third group III nitride crystal on a first face of said first wafer and a fourth group III nitride crystal on a second face of said first wafer.3. A method according to claim 2 , wherein cracks exposed on the surface of the first wafer including the first-generation seed are buried during the next growth.4. A method according to claim 1 , wherein both surfaces of the first wafer which includes the first-generation seed are covered with group III nitride crystals grown on the first-generation seed.5. A method according to claim 4 , wherein the group III nitride crystals are grown in supercritical ammonia.6. A method according to claim 1 , wherein the ingot is sliced into wafers with a multiple wire saw having a different wire pitch for the wafer which includes the first- ...

Laser processing method and device

A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided. This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S 11 and S 12 ) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S 13 and S 14 ) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.

CUTTING BLADE MOUNTING METHOD

A cutting blade mounting method of sandwiching both side surfaces of an annular cutting blade by a first flange and a second flange, the first flange being mounted on an end of a spindle and having a suction hole sucking and holding a side surface of the cutting blade to a sandwiching surface of the first flange, includes: a cutting blade provisional holding step of sucking and holding the cutting blade to the first flange by making the cutting blade abut against the sandwiching surface of the first flange at a perfect circle position at which a center of the cutting blade coincides with an axis of the spindle, and making a suction force act on the suction hole; and a fixing step of fixing the cutting blade maintaining the perfect circle position in the cutting blade provisional holding step to the first flange by the second flange. 1a cutting blade provisional holding step of sucking and holding the cutting blade to the first flange by making the cutting blade abut against the sandwiching surface of the first flange at a perfect circle position at which a center of the cutting blade coincides with an axis of the spindle, and making a suction force act on the suction hole; anda fixing step of fixing the cutting blade maintaining the perfect circle position to the first flange by the second flange after the cutting blade provisional holding step is performed.. A cutting blade mounting method of sandwiching both side surfaces of a cutting blade formed by an annular cutting edge by sandwiching surfaces of a first flange and a second flange, and mounting the cutting blade onto a spindle, the first flange being mounted on an end of the spindle and having a suction hole sucking and holding a side surface of the cutting blade to the sandwiching surface, the cutting blade mounting method comprising: The present invention relates to a method of mounting a cutting blade in a cutting apparatus.In manufacture of semiconductor devices or the like, a plurality of sections are set ...

METHOD AND DEVICE FOR SLICING A SHAPED SILICON INGOT USING LAYER TRANSFER

A method for slicing a crystalline material ingot includes providing a crystalline material boule characterized by a cropped structure including a first end-face, a second end-face, and a length along an axis in a first crystallographic direction extending from the first end-face to the second end-face. The method also includes cutting the crystalline material boule substantially through a first crystallographic plane in parallel to the axis to separate the crystalline material boule into a first portion with a first surface and a second portion with a second surface. The first surface and the second surface are planar surfaces substantially along the first crystallographic plane. The method further includes exposing either the first surface of the first portion or the second surface of the second portion, and performing a layer transfer process to form a crystalline material sheet from either the first surface of the first portion or from the second surface of the second portion. 1. A crystalline material boule portion used to produce a plurality of crystalline material sheets , the crystalline material boule portion comprising:a major surface that is substantially planar along a crystallographic plane;a first side face that is substantially planar along a first direction orthogonal to the major surface; anda second side face that is substantially planar along a second direction orthogonal to the major surface,wherein the major surface is exposed to produce the plurality of crystalline material sheets through a layer transfer process.2. The crystalline material boule portion of claim 1 , wherein the crystalline material boule portion is cut from a crystalline material boule that has a cropped structure including a first end-face claim 1 , a second end-face claim 1 , and a length along an axis in a crystallographic direction substantially extending from the first end-face to the second end-face claim 1 ,wherein the first and the second side faces correspond to the ...

METHOD OF MANUFACTURING CZ SILICON WAFERS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

In accordance with a method of manufacturing CZ silicon wafers, a parameter of at least two of the CZ silicon wafers is measured. A group of the CZ silicon wafers falling within a tolerance of a target specification is determined. The group of the CZ silicon wafers is divided into sub-groups taking into account the measured parameter. An average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification. A labeling configured to distinguish between the CZ silicon wafers of different sub-groups is prepared. The CZ silicon wafers falling within the tolerance of the target specification are packaged. 1. A method of manufacturing CZ silicon wafers , comprising:measuring a parameter of at least two of the CZ silicon wafers;determining a group of the CZ silicon wafers falling within a tolerance of a target specification;dividing the group of the CZ silicon wafers into sub-groups taking into account the measured parameter, wherein an average value of the parameter of the CZ silicon wafers of each sub-group differs among the sub-groups, and a tolerance of the parameter of the CZ silicon wafers of each sub-group is smaller than a tolerance of the parameter of the target specification;preparing a labeling configured to distinguish between the CZ silicon wafers of different sub-groups; andpackaging the CZ silicon wafers falling within the tolerance of the target specification.2. The method of claim 1 , wherein the parameter is a silicon wafer resistance.3. The method of claim 1 , wherein the parameter of a first part of the CZ silicon wafers is determined by measurement and the parameter of a second part of the silicon wafers is determined by calculation taking the results of the measurement into account.4. The method of claim 1 , wherein the CZ silicon wafers falling within the tolerance of ...

WAFER SEPARATION METHOD, WAFER SEPARATION AND TRANSFER METHOD, AND SOLAR CELL WAFER SEPARATION AND TRANSFER METHOD

A wafer separation apparatus improves wafer separation performance in separation and transfer and suppresses the occurrence of wafer breakage in separation and transfer, while remaining inexpensive and small. The apparatus includes: a cassette that vertically accommodates a large number of single wafers in intimate contact with each other, the cassette being at least vertically opened; a cassette support that removably supports the cassette, the cassette support being at least vertically opened; a hoisting unit that hoists and lowers the cassette support integrally with the cassette; a liquid bath that accommodates a liquid into which the cassette support is immersed integrally with the cassette when the hoisting unit descends; a nozzle in the inside of the liquid bath to issue micro bubbles from the underside of the cassette support toward a large number of the wafers; and a micro bubble generator that generates micro bubbles to be issued from the nozzle. 1. A wafer separation method comprising the steps of:an accommodating step of vertically accommodating a large number of single wafers in a cassette in intimate contact with each other, the cassette being at least vertically opened;a mounting and supporting step of mounting and supporting the cassette on a cassette support at least vertically opened;a lowering step of lowering the cassette support integrally with the cassette using a hoisting unit and immersing the wafers vertically arranged in a liquid in an inside of the liquid bath; anda micro bubble issuing step of issuing micro bubbles generated in a micro bubble generator from an underside of the cassette support toward the wafers vertically arranged and causing the micro bubbles to enter and stay in a large number of the individual wafers.2. A wafer separation and transfer method comprising:an accommodating step of vertically accommodating a large number of single wafers in a cassette in intimate contact with each other, the cassette being at least ...

METHOD FOR SLICING WORKPIECE AND WIRE SAW

A method for slicing a workpiece includes feeding and slicing a workpiece held by a workpiece holder with a bonding member therebetween, while reciprocatively traveling a fixed abrasive grain wire wound around multiple grooved rollers to form a wire row, so that the workpiece is sliced at multiple positions simultaneously. The bonding member has a grindstone part. The method includes, after the workpiece is sliced and before it is drawn out from the wire row, a fixed-abrasive-grain removal step of pressing the wire against the grindstone to remove fixed abrasive grains from the wire while reciprocatively traveling. In the fixed-abrasive-grain removal step, the wire rate is 100 m/min. or less, and the load on each line of the wire is 30 g or more. The method prevents a sliced workpiece from catching a wire and from causing saw mark and wire break in drawing out the wire after slicing. 16.-. (canceled)7. A method for slicing a workpiece with a wire saw which includes a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around a plurality of grooved rollers , the method comprising feeding a workpiece to the wire row for slicing the workpiece held by a workpiece holder with a bonding member bonded to the workpiece , while allowing the fixed abrasive grain wire to reciprocatively travel in an axial direction thereof , thereby slicing the workpiece at a plurality of positions aligned in an axial direction of the workpiece simultaneously ,wherein the bonding member has a grindstone as a part,the method comprises, after the workpiece is sliced and before the workpiece is drawn out from the wire row, a fixed-abrasive-grain removal step of pressing the wire row against the grindstone to remove the fixed abrasive grains from the fixed abrasive grain wire while the fixed abrasive grain wire is reciprocatively traveling, andin the fixed-abrasive-grain removal step, the fixed abrasive grain wire is traveled at a wire rate of ...

Workpiece management method and sheet cutting machine

A workpiece management method includes a frame unit forming step of forming a frame unit with a workpiece supported in an opening of an annular frame via a resin sheet, a printing step of, after performing the frame unit forming step, printing identification information of the workpiece on the resin sheet in an area between an outer periphery of the workpiece and an inner periphery of the annular frame, a processing step of processing the workpiece by a processing machine, a separation step of separating the processed workpiece from the resin sheet, and a storage step of storing the resin sheet from which the workpiece has been separated. A sheet cutting machine suitable for use in the workpiece management method is also disclosed.

SEPARATING DEVICE FOR THE CHIP-FREE CUTTING OF WAFERS OF DONOR SUBSTRATES

The present invention relates to a device () for separating at least one wafer from a donor substrate (). The device () according to the invention comprises at least a housing () with a receiving space () for receiving at least one multi-layer arrangement () which consists of at least one donor substrate () and a receiving layer () arranged or generated thereon, and an application device () for the contactless application of the multi-layer arrangement () for generating crack-conducting stresses in the multi-layer arrangement (). 112. Device () for cutting of at least one solid body portion , in particular a wafer , from a donor substrate () , in particular an ingot ,at least comprising{'b': 4', '6', '8', '2', '10, 'a housing () with a receiving space () for receiving at least one multi-layer arrangement (), consisting of at least one donor substrate () and one receiving layer () arranged or generated thereon, and'}{'b': 12', '8', '8, 'an application device () for the contactless application of the multi-layer arrangement () for generating crack conducting stresses in the multi-layer arrangement ().'}2. Device according to claim 1 ,characterised in that{'b': '12', 'crack initiating stresses are also generated without contact by the application device ().'}3. Device according to claim 1 ,characterised in that{'b': '14', 'a crack initiating device () is provided to initiate the crack,'}{'b': 14', '8', '2, 'wherein a crack initiation can be effected by the crack initiating device () either contactlessly or by contact with the multi-layer arrangement (), in particular the donor substrate ().'}4. Device according to any one of the preceding claims claim 1 ,characterised in that{'b': 12', '6', '8', '10', '2', '10, 'the application device () is designed to introduce a fluid substance into the receiving space (), wherein the temperature of at least a part of the multi-layer arrangement (), particularly the receiving layer (), can be controlled by means of the fluid ...

Misting Lubricant

Misting Lubricant may include the application of a liquid medium via a high-pressure mist nozzle instead of a conventional drip process. By utilizing misting lubricant, the lubricant may be evenly applied, and surface irregularities may be minimized, which may reduce or eliminate splashing. Misting lubricant may provide for a cleaner and more efficient material cutting process.

SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD

A semiconductor substrate manufacturing method includes: epitaxially growing a columnar III nitride semiconductor single crystal on a principal place of a circular substrate; removing a hollow cylindrical region at an outer peripheral edge side of the III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the III nitride semiconductor single crystal; and slicing the solid columnar region after removing the hollow cylindrical region. The hollow cylindrical region is removed such that the shape of the III nitride semiconductor single crystal is always keeps an axial symmetry that a center axis of the III nitride semiconductor single crystal is defined as a symmetric axis. 1. A method for manufacturing a semiconductor substrate , comprising:epitaxially growing a columnar group III nitride semiconductor single crystal on a principal plane of a circular substrate;removing a hollow cylindrical region at an outer peripheral edge side of the group III nitride semiconductor single crystal to leave a solid columnar region at an inside of the hollow cylindrical region of the group III nitride semiconductor single crystal; andslicing the solid columnar region after removing the hollow cylindrical region, wherein the removing of the hollow cylindrical region is carried out such that a shape of the group III nitride semiconductor single crystal always keeps an axial symmetry that a central axis of the semiconductor crystal is defined as a symmetry axis.2. The method according to claim 1 , wherein the hollow cylindrical region comprises a region that has a concentration of an impurity that is different from that in the solid columnar region.3. The method according to claim 1 , wherein the hollow cylindrical region comprises a region formed by a crystal growth using a plane that has a different orientation from an orientation in an upper surface of the solid columnar region as a growth interface in the epitaxial ...

BLADE MOUNTING AND DISMOUNTING JIG, BLADE MOUNTING AND DISMOUNTING METHOD, BLADE EXTRACTING METHOD, AND CUTTING APPARATUS

A blade mounting and dismounting jig is provided for mounting a blade on and dismounting a blade from a flange of a cutting apparatus which includes a boss, a blade mount for mounting the blade fitted thereover, the flange having an annular end face for supporting the blade thereon and being fixed to a distal end of a spindle, and a holder that cooperates with the flange in gripping and securing the blade in position. The blade mounting and dismounting jig includes a cylindrical jig body, a grip coupled to the jig body and having a diameter larger than the jig body, a plurality of first air ejection ports defined in a distal end portion of the jig body, a plurality of second air ejection ports defined in the jig body at a juncture between the jig body and the grip. 1. A blade mounting and dismounting jig for mounting a blade on and dismounting a blade from a flange of a cutting apparatus which includes at least a boss , a blade mount for mounting the blade fitted thereover , the flange having an annular end face for supporting the blade thereon and being fixed to a distal end of a spindle , and a holder that cooperates with the flange in gripping and securing the blade in position , said blade mounting and dismounting jig including:a cylindrical jig body having a recess defined in a distal end portion thereof, the distal end portion having a diameter same as that of said blade mount, said recess being receptive of said boss fitted therein;a grip coupled to said jig body and having a diameter larger than said jig body;a plurality of first air ejection ports defined in the distal end portion of the jig body;a plurality of second air ejection ports defined in the jig body at a juncture between said jig body and said grip;a first fluid communication route for bringing said first air ejection ports into fluid communication with an air source under control of a controller; anda second fluid communication route for bringing said second air ejection ports into fluid ...

Si SUBSTRATE MANUFACTURING METHOD

An Si substrate manufacturing method includes a separation band forming step of forming a separation band through positioning a focal point of a laser beam with a wavelength having transmissibility with respect to Si to a depth, equivalent to a thickness of an Si substrate to be manufactured, from a flat surface of an Si ingot and irradiating the Si ingot with the laser beam while relatively moving the focal point and the Si ingot in a direction < parallel to a cross line at which a crystal plane { and a crystal plane { intersect or a direction [ orthogonal to the cross line, and an indexing feed step of executing indexing feed of the focal point and the Si ingot relatively in a direction orthogonal to a direction in which the separation band is formed. 1100. A silicon substrate manufacturing method for manufacturing a silicon substrate from a silicon ingot in which a crystal plane () is made to be a flat surface , the silicon substrate manufacturing method comprising:{'b': 110', '100', '111', '110, 'a separation band forming step of forming a separation band through positioning a focal point of a laser beam with a wavelength having transmissibility with respect to silicon to a depth equivalent to a thickness of the silicon substrate to be manufactured from the flat surface and irradiating the silicon ingot with the laser beam while relatively moving the focal point and the silicon ingot in a direction <> parallel to a cross line at which a crystal plane {} and a crystal plane {} intersect or a direction [] orthogonal to the cross line;'}an indexing feed step of executing indexing feed of the focal point and the silicon ingot relatively in a direction orthogonal to a direction in which the separation band is formed; and{'b': '100', 'a wafer manufacturing step of repeatedly executing the separation band forming step and the indexing feed step to form a separation layer parallel to the crystal plane () as a whole inside the silicon ingot and separating the silicon ...

POLYCRYSTALLINE SiC WAFER PRODUCING METHOD

There is provided a polycrystalline SiC wafer producing method. In this method, in a modified layer forming step for forming an interface for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot, the formed interface is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of a pulse laser beam and then polycrystalline SiC splits into amorphous silicon and amorphous carbon at a position at which the power density is constant with absorption of the continuously-emitted pulse laser beam by amorphous carbon formed in advance. 1. A polycrystalline SiC wafer producing method for producing a polycrystalline SiC wafer from a polycrystalline SiC ingot , the method comprising:a modified layer forming step of positioning a light focus point of a pulse laser beam having such a wavelength as to be transmitted through the polycrystalline SiC ingot at a predetermined position from an irradiated surface of the polycrystalline SiC ingot and irradiating the polycrystalline SiC ingot with the pulse laser beam to form modified layers at a position at which an interface between the polycrystalline SiC wafer and the polycrystalline SiC ingot is to be formed; anda polycrystalline SiC wafer separating step of giving an external force to an upper side relative to the interface formed by the modified layer forming step and separating the polycrystalline SiC wafer from the interface,wherein the interface formed in the modified layer forming step is a surface formed by linking of modified layers formed in such a manner that an initial modified layer is formed through splitting of polycrystalline SiC into amorphous silicon and amorphous carbon at the light focus point of the pulse laser beam, the pulse laser beam emitted next is absorbed by the amorphous carbon formed by the pulse laser beam emitted in advance ...

Wafer producing method

A hexagonal single crystal wafer is produced from a hexagonal single crystal ingot. The depth of the focal point of a laser beam is gradually changed from a shallow position not reaching the depth corresponding to the desired thickness of the wafer to a deep position corresponding to the desired thickness of the wafer in such a manner that a parabola is described by the path of the focal point. When the spot area of the laser beam on the upper surface of the ingot becomes a predetermined maximum value, the deep position of the focal point is maintained.

METHOD FOR SLICING WORKPIECE AND PROCESSING LIQUID

The present invention is a method for slicing a workpiece, including: forming a wire row by a wire spirally wound between a plurality of wire guides and traveling in an axial direction, and pressing a workpiece against the wire row while supplying a processing liquid containing abrasive grains to a contact portion between the workpiece and the wire, wherein a used portion of the abrasive grains are subjected to a treatment with a mixed liquid of sulfuric acid and hydrogen peroxide, and the abrasive grains subjected to the treatment are reused for the slicing of a workpiece. This makes it possible to slice a workpiece with suppressing contamination of a wafer with metal impurities when abrasive grains are reused in slicing a workpiece by use of a wire saw. 1. A method for slicing a workpiece , comprising:forming a wire row by a wire spirally wound between a plurality of wire guides and traveling in an axial direction, andpressing a workpiece against the wire row while supplying a processing liquid containing abrasive grains to a contact portion between the workpiece and the wire, whereina used portion of the abrasive grains are subjected to a treatment with a mixed liquid of sulfuric acid and hydrogen peroxide, andthe abrasive grains subjected to the treatment are reused for the slicing of a workpiece.2. A processing liquid , comprising abrasive grains to be reused after being used for slicing a workpiece by use of a wire saw , whereina concentration of copper contained in the abrasive grains is 1 ppm or less per 1 g of the abrasive grains. The present invention relates to a method for slicing a workpiece by use of a wire saw and a processing liquid used therefor.In recent years, an increase in size of a semiconductor wafer is demanded, and a wire saw apparatus is mainly used to slice a workpiece with this increase in size.The wire saw apparatus is an apparatus that causes a wire (a high-tensile steel wire) to travel at a high speed, to which a workpiece (such as a ...

CUTTING APPARATUS

A controller of a cutting apparatus includes: a storage section configured to preliminarily store as a threshold an arbitrary value based on a load current value of a motor detected when a cutting blade is rotated at a predetermined rotational speed while supplying a predetermined quantity of cutting water in a state in which a cutting water supply nozzle is positioned in an appropriate position; and a judgment section configured to judge normality or abnormality according to the result of comparison between a load current value detected when the cutting blade is rotated at the predetermined rotational speed while supplying the predetermined quantity of cutting water and the threshold stored in the storage section. 1. A cutting apparatus comprising:cutting means which includes a spindle supported in a rotatable manner, a motor for rotationally driving the spindle, a cutting blade mounted to a tip portion of the spindle, and a cutting water supply nozzle for supplying cutting water to the cutting blade;load current value detecting means for detecting a load current value of the motor; andcontrol means for controlling the cutting means and the load current value detecting means,wherein the control means includes:a storage section configured to preliminarily store as a threshold an arbitrary value based on a load current value detected by the load current value detecting means when the cutting blade is rotated at a predetermined rotational speed while supplying a predetermined quantity of cutting water in a state in which the cutting water supply nozzle is positioned in an appropriate position; anda judgment section configured to judge normality or abnormality according to a result of comparison between a load current value detected by the load current value detecting means when the cutting blade is rotated at the predetermined rotational speed while supplying the predetermined quantity of cutting water and the threshold stored in the storage section.2. The cutting ...

Crucible, fabrication method of the crucible, and fabrication method of a crystalline material by means of such a crucible

A crucible for formation of a crystalline material by solidification by growth on seed, including a bottom, at least one side wall orthogonal to the bottom of the crucible, and at least two marks extending on the inner surface of the at least one side wall in an orthogonal direction to the bottom of the crucible, for materialising the position of at least one seed designed to be positioned at the bottom of the crucible, the seed including at least first and second surfaces orthogonal to the bottom of the crucible. The respective positions of at least two of the marks on at least one of the side walls define, in the crystalline material, a first cutting plane tangent to the first surface of the seed and a second cutting plane tangent to the second surface of the seed.

WIRE SAW, WIRE GUIDE ROLL AND METHOD FOR SIMULTANEOUSLY CUTTING A MULTIPLICITY OF WAFERS FROM AN INGOT

A multiplicity of wafers are simultaneously cut from an ingot by means of a structured sawing wire, wherein the structured sawing wire is guided through grooves of two wire guide rolls, and a bottom of each groove, on which the structured wire hears, has a curved groove bottom with a radius of curvature which, for each groove, is equal to or up to 1.5 times as large as the radius of the envelope of the structured wire which the structured wire has in the respective groove. 110.-. (canceled)11. A method for simultaneously cutting a multiplicity of wafers from an ingot , comprising:moving the ingot through a wire web of structured sawing wire which is spanned by two co-rotating wire guide rolls having grooves while applying a slurry to the wire web, wherein the structuring of the wire comprises a multiplicity of indentations and protrusions of a plain core wire perpendicular to the longitudinal direction of the core wire, the structured core wire having a cross-sectional envelope, wherein the structured sawing wire is guided through the grooves of the two wire guide rolls, and wherein the bottom of each groove, on which the structured wire bears, is curved with a radius of curvature which for each groove is equal to or up to 1.5 times as large as the radius of the envelope of the structured wire which the structured wire has in the respective groove.12. The method of claim 11 , wherein the indentations and protrusions point on average over its longitudinal direction in all planes perpendicular to the longitudinal direction and are formed by means of structuring of the core wire in a plane perpendicular to the longitudinal direction and torsioning of the structured wire about the longitudinal axis of the structured wire claim 11 , so that a twisted structured wire thus formed has the shape of a helix.13. The method of claim 11 , wherein the structuring of the wire on average over the longitudinal direction points in all planes perpendicular to the longitudinal ...

SHAPED SAW WIRE WITH CONTROLLED CURVATURE AT BENDS

A saw wire to cut hard and brittle materials is disclosed that comprises a steel wire that is provided with bends with segments in between. The average degree of bending of the bends is between 0.5% and 5%. Such a saw wire has a higher breaking load compared to saw wires having a conventional, higher average degree of bending. A method to measure the curvature is described as well as a process to make the inventive saw wire. The invention is applicable to any shaped saw wire for example a single crimped saw wire, a saw wire with at least two crimps in different planes, a saw wire with crimps rotating in a plane. 117-. (canceled)19. The method according to claim 18 , wherein the teeth radius ‘R’ is larger than or equal to 4 times the diameter ‘d’ and smaller than 12.5 times the diameter ‘d’ and wherein the tension is held between 7.5% to 20% of ‘F’.20. The method according to claim 18 , wherein the bending device is a single toothed wheel over which the said steel wire is lead over at least 3 teeth.21. The method according to claim 18 , wherein the bending device is one or more intermeshing toothed wheel pairs through which the wire is led thereby forming crimps in said steel wire claim 18 , and wherein the indentation of one tooth between the top of two facing teeth is set between 1 to 10 times the diameter ‘d’ of said steel wire.22. The method according to claim 21 , wherein the indentation of one tooth between the top of two facing teeth is set between 2 to 10 times the diameter ‘d’ of said steel wire.23. The method according to claim 21 , wherein the indentation of one tooth between the top of two facing teeth is set between 2 to 5 times the diameter ‘d’ of said steel wire.24. The method according to claim 20 , wherein two or more of said toothed wheel pairs induce crimps in different axial planes of said steel wire.25. The method of claim 21 , wherein said one or more bending devices are rotating relative to the axis of said steel wire.26. The method according ...

METHOD FOR SLICING WORKPIECE AND WIRE SAW

A method for slicing a workpiece with a wire saw which includes a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around multiple grooved rollers, the method including feeding a workpiece to the wire row for slicing while allowing the fixed abrasive grain wire to reciprocatively travel in an axial direction thereof, thereby slicing the workpiece at multiple positions aligned in an axial direction of the workpiece simultaneously. The method includes: supplying a coolant for workpiece slicing onto the wire row when the workpiece is sliced with the fixed abrasive grain wire; and supplying a coolant for workpiece drawing, which differs from and has a higher viscosity than the coolant for workpiece slicing, onto the wire row when the workpiece is drawn out from the wire row after the slicing of the workpiece. 15-. (canceled)6. A method for slicing a workpiece with a wire saw which includes a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around a plurality of grooved rollers , the method comprising feeding a workpiece to the wire row for slicing while allowing the fixed abrasive grain wire to reciprocatively travel in an axial direction thereof , thereby slicing the workpiece at a plurality of positions aligned in an axial direction of the workpiece simultaneously ,wherein the method comprises:supplying a coolant for workpiece slicing onto the wire row when the workpiece is being sliced with the fixed abrasive grain wire; andsupplying a coolant for workpiece drawing, which is different from the coolant for workpiece slicing and has a higher viscosity than the coolant for workpiece slicing, onto the wire row when the workpiece is drawn out from the wire row after the slicing of the workpiece.7. The method for slicing a workpiece according to claim 6 , whereinthe coolant for workpiece slicing to be used has a viscosity at 25° C. of 5 mPas or less, andthe ...

METHOD FOR SLICING WORKPIECE

A method for slicing a workpiece with a wire saw which includes a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around a plurality of grooved rollers, the wire being fed from one of a pair of wire reels and taken up by another, the method including feeding a workpiece to the row for slicing while allowing the wire to reciprocate and travel in an axial direction, thereby slicing the workpiece at a plurality of positions aligned in an axial direction of the workpiece simultaneously. Prior to slicing, an abrasive-grain abrading step wherein the wire is allowed to travel without slicing the workpiece, allowing the wire to rub against itself within the reels, and dressing its surface for 30 minutes or more. The method can dress a fixed abrasive grain wire at low cost and suppress thickness unevenness of wafers. 14-. (canceled)5. A method for slicing a workpiece with a wire saw which comprises a wire row formed by winding a fixed abrasive grain wire having abrasive grains secured to a surface thereof around a plurality of grooved rollers , the fixed abrasive grain wire being fed from one of a pair of wire reels and taken up by another wire reel , the method comprising feeding a workpiece to the wire row for slicing while allowing the fixed abrasive grain wire to reciprocate and travel in an axial direction thereof , thereby slicing the workpiece at a plurality of positions aligned in an axial direction of the workpiece simultaneously ,wherein the method comprises, before the slicing of the workpiece is begun, an abrasive-grain abrading step in which the fixed abrasive grain wire is allowed to travel without slicing the workpiece, thereby allowing the fixed abrasive grain wire to rub against itself within the wire reels, and dressing the surface of the fixed abrasive grain wire, andthe abrasive-grain abrading step comprises dressing the surface of the fixed abrasive grain wire for 30 minutes or more.6. The method ...

Shaped silicon ingot using layer transfer

A shaped crystalline ingot for an ion cleaving process has a major surface that is substantially planar, a first side face that is substantially planar along a first direction orthogonal to the major surface, and a second side face that is substantially planar along a second direction orthogonal to the major surface. The ion cleaving process is a process in which ions are implanted into the shaped crystalline ingot to form a cleave plane that separates a substrate comprising the major surface from the shaped crystalline ingot.

Cutting apparatus

A cutting unit includes a spindle, a spindle housing, a support flange on the front of the spindle, a cutting blade detachably supported to the support flange, and a fixing flange for fixing the cutting blade to the support flange. The support flange includes a boss portion adapted to be inserted through a central opening of the cutting blade, a flange portion for supporting one side surface of the cutting blade, and a cylindrical portion for engaging the front of the spindle. The flange portion has a suction hole opening toward the fixing flange, and the cylindrical portion has a communication hole communicating with the suction hole. The communication hole is connected to a vacuum source through a rotary joint fixed to the spindle housing so that communication between the communication hole and the vacuum source is selectively made by an on-off valve.

CUTTING APPARATUS

A cutting unit includes a spindle, a spindle housing, a support flange on the front of the spindle, a cutting blade detachably supported to the support flange, and a fixing flange for fixing the cutting blade to the support flange. The support flange includes a boss portion adapted to be inserted through a central opening of the cutting blade, a flange portion for supporting one side surface of the cutting blade, and a cylindrical portion for engaging the front of the spindle. The flange portion has a suction hole opening toward the fixing flange, and the cylindrical portion has a communication hole communicating with the suction hole. The communication hole is connected to a vacuum source through a rotary joint fixed to the spindle housing so that communication between the communication hole and the vacuum source is selectively made by an on-off valve. 1. A cutting apparatus comprising:a chuck table for holding a workpiece;cutting means for cutting said workpiece held on said chuck table; andfeeding means for relatively feeding said chuck table and said cutting means;said cutting means including a spindle, a spindle housing for rotatably supporting said spindle, a support flange mounted on the front end portion of said spindle, a cutting blade detachably supported to said support flange, and a fixing flange for fixing said cutting blade supported to said support flange;said support flange including a boss portion adapted to be inserted through a central opening of said cutting blade, a flange portion formed integrally with the outer circumference of said boss portion for supporting one side surface of said cutting blade, and a cylindrical portion for engaging the front end portion of said spindle;said flange portion of said support flange being formed with a suction hole opening toward said fixing flange, said cylindrical portion of said support flange being formed with a communication hole communicating with said suction hole;said communication hole being ...

CUTTING APPARATUS

A cutting unit includes a spindle housing, a spindle, a mounter fixed to the front end portion of the spindle for supporting a cutting blade, and a fixing flange for fixing the cutting blade to the mounter. The mounter includes a boss portion for axially slidably supporting the fixing flange, the boss portion being fitted to an engaging hole formed in a central portion of the fixing flange, a flange portion projecting radially outward from the outer circumference of the boss portion, the flange portion having a supporting surface for supporting the cutting blade on the front side opposed to the fixing flange, and a cylindrical portion formed on the rear side of the flange portion. The flange portion has a suction hole opening. The cylindrical portion has a communication passage communicating with the suction hole. The communication passage is connected through a rotary joint to a suction unit. 1. A cutting apparatus comprising:workpiece holding means for holding a workpiece;cutting means having a rotatable cutting blade for cutting the workpiece held by the workpiece holding means; andfeeding means for relatively moving the workpiece holding means and the cutting means in a feeding direction;the cutting means including a spindle housing, a spindle rotatably supported to the spindle housing, a mounter fixed to a front end portion of the spindle for supporting the cutting blade, and a fixing flange for fixing the cutting blade supported by the mounter to the mounter;the mounter including a boss portion for axially slidably supporting the fixing flange, the boss portion being fitted to an engaging hole formed in a central portion of the fixing flange, a flange portion projecting radially outward from the outer circumference of the boss portion, the flange portion having a supporting surface for supporting the cutting blade on the front side opposed to the fixing flange, and a cylindrical portion formed on the rear side of the flange portion;the flange portion of the ...

GEMSTONE PROCESSING

Systems and methods for gemstone processing are described herein. According to an embodiment, a gemstone processing system includes a visualization system () for capturing stresses in a rough gemstone (). The visualization system () can include an image capturing device (), a gemstone stage () being rotatable with respect to the image capturing device (), and one or more light sources () to illuminate the rough gemstone () on the gemstone stage (). 1. A visualization system comprising:a gemstone stage comprising a gemstone holder to hold a rough gemstone;a first light source to illuminate the rough gemstone positioned in the gemstone holder; capture a temporal optical pattern generated by the rough gemstone over a predetermined period of time; and', 'capture at least one static frame of the rough gemstone; and, 'an image capturing device in-line with the first light source toa planning unit to generate at least one cutting plan for cutting the rough gemstone, based on the temporal optical pattern of the rough gemstone and the at least one static image of the rough gemstone.2. The visualization system as claimed in claim 1 , wherein the gemstone stage is coupled to an actuator claim 1 , and wherein the visualization system comprises a processing unit to control the actuator to control movement of the gemstone stage.3. The visualization system as claimed in claim 1 , further comprising a second light source in-line with a central axis longitudinal axis of the gemstone stage claim 1 , wherein the second light source is in-line with the second image capturing device.4. The visualization system as claimed in claim 1 , further comprising a plurality of optical filters positioned between the gemstone stage claim 1 , the first light source claim 1 , and the primary image capturing device claim 1 , and between the gemstone stage claim 1 , the second light source claim 1 , and the second image capturing device claim 1 , wherein the plurality of optical filter are to filter ...

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

METHOD FOR RECOVERING SILICON PARTICLES AND ABRASIVE GRAINS FROM WASTED ABRASIVE SLURRY

Disclosed herein is a method for recovering silicon particles and abrasive grains from a wasted abrasive slurry. The method includes providing a wasted abrasive slurry that contains silicon particles, abrasive grains and a water-soluble glycol, and mixing the wasted abrasive slurry with a metal chloride solution, so as to obtain a micelle layer and a slurry layer, the micelle layer including the water-soluble glycol, and the slurry layer including the silicon particles and the abrasive grains. 1. A method for recovering silicon particles and abrasive grains from a wasted abrasive slurry , comprising:providing a wasted abrasive slurry that contains silicon particles, abrasive grains and a water-soluble glycol; andmixing the wasted abrasive slurry that contains silicon particles, abrasive grains and a water-soluble glycol with a metal chloride solution, so as to obtain a micelle layer and a slurry layer, the micelle layer including the water-soluble glycol, and the slurry layer including the silicon particles and the abrasive grains.2. The method of claim 1 , further comprising subjecting the slurry layer to a separation treatment claim 1 , so as to obtain an aqueous supernatant and a precipitate that includes the silicon particles and the abrasive grains.3. The method of claim 2 , further comprising adding an acid solution into the precipitate so as to separate the silicon particles and the abrasive grains.4. The method of claim 3 , wherein the acid solution is an organic acid solution.5. The method of claim 1 , wherein the abrasive grains are selected from the group consisting of silicon carbide grains claim 1 , aluminium oxide grains claim 1 , zirconium oxide grains claim 1 , yttrium oxide grains claim 1 , brown corundum grains claim 1 , white corundum grains claim 1 , and combinations thereof.6. The method of claim 1 , wherein the water-soluble glycol is selected from the group consisting of diol claim 1 , polyol and the combination thereof.7. The method of claim ...

METHOD FOR PRODUCING SEMICONDUCTOR WAFERS USING A WIRE SAW, WIRE SAW, AND SEMICONDUCTOR WAFERS MADE OF MONOCRYSTALLINE SILICON

Semiconductor wafers are produced from a workpiece by means of a wire saw, by feeding the workpiece through an arrangement of wires tensioned between wire guide rollers and divided into wire groups, the wires moving in a running direction producing kerfs as wires engage the workpiece. For each of the wire groups, a placement error of the kerfs of the wire groups determined, and for each of the wire groups compensating movements of the wires of the wire group are induced as a function of the placement error, in a direction perpendicular to the running direction of the wires during feeding of the workpiece through the arrangement of wires, by activating at least one drive element. 112.-. (canceled)13. A method for producing semiconductor wafers from a workpiece by processing the workpiece by means of a wire saw , comprising:feeding the workpiece through an arrangement of wires which are tensioned between wire guide rollers while being divided into wire groups and move in a running direction,producing kerfs when the wires engage the workpiece;for each of the wire groups, determining a placement error of the kerfs of the wire group; andfor each of the wire groups, inducing a compensating movement of the wires of the wire group as a function of the determined placement error of the kerfs of the wire group, in a direction perpendicular to a running direction of the wires of the wire group during the feeding of the workpiece through the arrangement of wires, by activating at least one wire group drive element.14. The method of claim 13 , further comprising dividing the wires into no fewer than three wire groups and at most a number of wire groups which corresponds to the number of wires of the arrangement.15. The method of claim 13 , wherein comprising determining the placement error of the kerfs is determined during the feeding of the workpiece through the arrangement of wires.16. The method of claim 13 , wherein the placement error of the kerfs of the wire group is ...

METHOD FOR PRODUCING SEMICONDUCTOR WAFERS BY MEANS OF A WIRE SAW

Semiconductor wafers with improved geometry are produced from a workpiece by processing the workpiece by means of a wire saw, by 15.-. (canceled)6. A method for producing semiconductor wafers from a workpiece by processing the workpiece by means of a wire saw , comprisingfeeding the workpiece through an arrangement of wires which are tensioned between wire guide rollers and move in a running direction;producing kerfs when the wires engage into the workpiece;determining at last one placement error of the kerfs; andinducing a compensating movement of the workpiece as a function of the determined placement error(s) along a longitudinal axis of the workpiece during the feeding of the workpiece through the arrangement of wires.7. The method of claim 6 , comprising determining a placement error of the kerfs during the feeding of the workpiece through the arrangement of wires.8. The method of claim 6 , comprising determining a placement error of the kerfs by measuring the position of the kerfs by means of irradiating the kerfs with optical radiation claim 6 , IR radiation claim 6 , X-radiation or γ radiation claim 6 , by mechanical sensing of the kerfs or by inductive or capacitive measurement of the kerfs claim 6 , and comparing the measured position with a setpoint position of the kerfs.9. The method of claim 7 , comprising determining a placement error of the kerfs by measuring the position of the kerfs by means of irradiating the kerfs with optical radiation claim 7 , IR radiation claim 7 , X-radiation or γ radiation claim 7 , by mechanical sensing of the kerfs or by inductive or capacitive measurement of the kerfs claim 7 , and comparing the measured position with a setpoint position of the kerfs.10. The method of claim 6 , further comprising tracking changes in a wire saw-specific correction profile in the course of the processing of a plurality of workpieces claim 6 , and initiating a predictive maintenance measure if the changes have exceeded an established ...

DIAMOND WIRE CUTTING METHOD FOR CRYSTAL BOULES

Method for cutting crystal boules using diamond wire, wherein this boule is driven about a main axis, a cutting wire is held taut and driven through a temporary drum immobilising each boule in position with respect to the main axis throughout the entire cutting operation, this temporary drum being made by overmoulding a coating material on at least one boule bonded onto a sacrificial core, the cutting being followed by the slicing of cut rings from which are detached, particularly using heat, crystalline plates with parallel faces. 1. A method for cutting at least one crystal boule using diamond wire , wherein there is determined a boule axis , perpendicularly to which it is chosen to cut said at least one boule with a boule radius , and said boule is driven about a main axis parallel to said boule axis , and a cutting wire is held taut and driven along a straight segment in a plane perpendicular to said main axis , wherein there is made a temporary drum which immobilises said at least one boule in position with respect to said main axis throughout the entire cutting operation , during which said boule axis is made to pass on either side of said straight segment during the cutting of said at least one boule inside said temporary drum , and wherein said temporary drum is based on a sacrificial core formed by an axial tube or cylinder , whose axis of revolution coincides with said main axis , and whose radius is equal to the difference between said eccentricity and said boule radius , on which sacrificial core is bonded , after preparation , each said boule oriented with its boule axis parallel to said main axis , to form a bonded assembly , and wherein , once said boules are bonded onto said sacrificial core , said bonded assembly is inserted into an envelope inside which said bonded assembly is overmoulded with a coating material , which is left to cure to form an overmoulded assembly , characterized in that , after curing of said coating material , said overmoulded ...

Incident radiation induced subsurface damage for controlled crack propagation in material cleavage

A cleaving system employs a shaper, a positioner, an internal preparation system, an external preparation system, a cleaver, and a cropper to cleave a workpiece into cleaved pieces. The shaper shapes a workpiece into a defined geometric shape. The positioner then positions the workpiece such that the internal preparation system can generate a separation layer at the cleaving plane. The internal preparation system focuses a laser beam internal to the workpiece at a focal point and scans the focal point across the cleaving plane to create the separation layer. The external preparation system scores the external surface of the workpiece at a location coincident with the separation layer. The cleaver cleaves the workpiece by propagating the crack on the external surface along the separation layer. The cropper shapes the cleaved piece into a geometric shape as needed.

SEMICONDUCTOR DIE SINGULATION METHODS

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. A cutting tool comprising:a central support section having a major axis;a cutting tip;a cutting surface adjacent to the cutting tip and extending from the cutting tip toward the central support section terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section;a depth stop spaced a first distance from the cutting tip toward the central support section wherein, a first volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop; andan accumulation region adjacent to the central support section and extending away from the cutting surface, the accumulation region having a second volume that approximates the first volume.12. The cutting tool of wherein the accumulation region extends from the distal end of the cutting surface away from the cutting tip.13. The cutting tool of wherein the depth stop has a first portion that is configured to engage with a surface of a conductor on a semiconductor wafer to limit a depth of penetration of the cutting tip into the conductor.14. The cutting tool of wherein the central support section is rotatingly coupled to the cutting surface.15. The cutting tool of wherein the cutting surface angularly extends from the cutting tip to the central support section.16. The cutting tool of wherein the accumulation region is formed as a recess disposed within the central support section claim 11 , the accumulation region positioned adjacent to the distal end of the cutting ...

HOLDING APPARATUS, HOLDING METHOD THEREOF, WIRE ELECTRICAL DISCHARGE MACHINING APPARATUS, AND MACHINING METHOD THEREOF

A holding apparatus, which is used in electrical discharge machining for cutting a workpiece into slices at intervals of wires arranged in parallel to each other, includes: a holding unit for holding the workpiece so as to prevent the workpiece from falling from the holding apparatus; and an energization unit for energizing the workpiece so as to pass current through the workpiece. The holding unit is disposed outside a place at which the wires and the holding unit interfere with each other. The energization unit is disposed at a place at which the cutting of the workpiece into slices by the wires ends. A portion of the energization unit, which is brought into contact with the workpiece at the place at which the cutting of the workpiece into slices ends, has a surface shape that is prevented from conforming to a machining surface of the workpiece. 1. A holding apparatus , which is used in electrical discharge machining for cutting a workpiece into slices at intervals of wires arranged in parallel to each other , the holding apparatus comprising:a holding unit arranged to hold the workpiece so as to prevent the workpiece from falling from the holding apparatus; andan energization unit arranged to energize the workpiece so as to pass current through the workpiece, wherein:the holding unit is disposed outside a place at which the wires and the holding unit interfere with each other;the energization unit is disposed at a place at which the cutting of the workpiece into slices by the wires ends; anda portion of the energization unit, which is brought into contact with the workpiece at the place at which the cutting of the workpiece into slices ends, has a surface shape that is prevented from conforming to a machining surface of the workpiece which is cut into slices.2. A holding apparatus according to claim 1 , wherein claim 1 , when the holding unit is absent in the holding apparatus claim 1 , the energization unit itself is incapable of solely holding the workpiece so ...

WAFER GROUP, WAFER MANUFACTURING DEVICE, AND WAFER MANUFACTURING METHOD

A wafer group facilitates securing uniformity of products manufactured from the wafer group whose composition varies among wafers. A technique excludes uncertain factors in forming OF, forming OF with extremely high probability and extremely high accuracy, the wafer group being constituted by a plurality of wafers obtained from the same ingot, with all wafers having an orientation flat (OF), wherein the wafer group is constituted by 70 or more wafers, and in the OF orientation accuracy of the wafer group represented by an angle, the OF orientation accuracy in each wafer is within ±0.010°. 1. A wafer group constituted by a plurality of wafers obtained from the same ingot , with all wafers having an orientation flat (OF) , wherein the wafer group is constituted by 70 or more wafers , and in the OF orientation accuracy of the wafer group represented by an angle , the OF orientation accuracy in each wafer is within ±0.010°.2. The wafer group according to claim 1 , wherein at least one of the following conditions are satisfied claim 1 ,(Condition 1) A value obtained by subtracting a minimum value from a maximum value of the OF orientation accuracy in each wafer, is 0.010° or less.(Condition 2) A value obtained by subtracting an average value of the OF orientation accuracy of the wafer group from the maximum value of the OF orientation accuracy in each wafer, is 0.006° or less.(Condition 3) A value obtained by subtracting the minimum value of the OF orientation accuracy in each wafer from the average value of the OF orientation accuracy of the wafer group, is 0.006° or less.(Condition 4) A standard deviation of the OF orientation accuracy of the wafer group, is 0.0015 or less.3. The wafer group according claim 1 ,wherein for each wafer constituting the wafer group, a plot is formed in which the number of each wafer sequentially given from the side close to one end of the ingot is taken as X axis, and a concentration of a predetermined element in each wafer is taken as Y ...

LED WAFER PROCESSING METHOD

An LED wafer is formed from a sapphire substrate having a front side. A plurality of crossing division lines are formed on the front side of the sapphire substrate to thereby define a plurality of separate regions where a plurality of LEDs are respectively formed. An LED wafer processing method includes preparing a V-blade having an annular cutting edge whose outer circumferential portion has a V-shaped cross section, rotatably mounting the V-blade in a cutting unit, holding the LED wafer on a holding table with the back side of the LED wafer exposed upward, and then relatively moving the cutting unit and the holding table to form a chamfered portion on the back side of the LED wafer along an area corresponding to each division line formed on the front side of the LED wafer.

DIE MATRIX EXPANDER WITH PARTITIONED SUBRING

A die matrix expander includes a subring including ≥3 pieces, and a wafer frame supporting a dicing tape having an indentation for receiving pieces of the subring. The subring prior to expansion sits below a level of the wafer frame and has an outer diameter Подробнее

Sample Preparation Apparatus For Direct Numerical Simulation Of Rock Properties

A sample preparation apparatus and method of preparing a rock sample using such an apparatus, as useful in connection with the digital numerical simulation of properties of the rock. The disclosed apparatus includes a fixably mounted diamond wire cutter. Three linear translation stages are coupled to a specimen holder. One of the translation stages moves the specimen in a direction parallel to the plane of the cutting wire. The other two translation stages move the specimen in different directions from one another, and when actuated together, advance the specimen into the wire for short distances in a direction out of the plane of the cutting wire. Short piecewise linear cuts are made in the specimen, to provide a sample of the desired shape with a small cross-section. 1. A method of cutting a rock sample , comprising:operating a wire saw to advance a cutting wire from a wire supply drum around a guiding roller, forward and return vertical lengths of the cutting wire between the wire supply drum and guiding roller defining a cutting plane;cutting a path from an edge of a specimen of rock to a starting point;then actuating either or both of first and second translation stages to linearly advance the specimen in a direction not parallel to the cutting plane;then stopping the advancing of the specimen until the cutting wire returns to a substantially straight orientation;repeating the actuating and stopping steps a plurality of times to cut a closed figure in the specimen, the closed figure defining a perimeter of the sample; andthen withdrawing the specimen of rock along the path.2. The method of claim 1 , wherein the first and second translation stages are oriented orthogonally relative to one another.3. The method of claim 1 , wherein the cutting step comprises:advancing the specimen from its edge in a direction parallel to the cutting plane, to cut the path into the specimen to the starting point;and wherein the withdrawing step comprises:withdrawing the specimen ...

CUTTING APPARATUS

A cutting apparatus includes a blade changing unit demounting an old cutting blade from a blade mount and mounting a new cutting blade to the blade mount. The blade changing unit includes a blade holder for holding a support base of each cutting blade and a moving portion for moving the blade holder in the axial direction of a boss portion of the blade mount in the condition where each cutting blade is held by the blade holder, thereby mounting the new cutting blade to the boss portion or demounting the old cutting blade from the boss portion. The cutting apparatus further includes a control unit controlling the blade changing unit. The control unit measures a signal indicating a force applied to the moving portion in mounting or demounting, and determines the condition of the blade changing unit and blade mount according to the signal measured by the measuring portion. 1. A cutting apparatus comprising:a chuck table for holding a workpiece;a cutting unit having a spindle, a blade mount fixed to the spindle at a front end thereof, and a cutting blade detachably mounted on the blade mount for cutting the workpiece held on the chuck table, the cutting blade being composed of an annular support base having a central insertion hole and an annular cutting edge provided on the outer circumference of the support base;a blade changing unit replacing the cutting blade as an old blade with a new blade by demounting the old blade from the blade mount and then mounting the new blade to the blade mount; anda control unit controlling the cutting unit and the blade changing unit, wherein a boss portion adapted to be inserted through the insertion hole of the support base of the cutting blade and extending in the axial direction of the spindle, and', 'a flange portion formed at one end of the boss portion so as to project radially outward from the outer circumference of the boss portion, the flange portion having an end surface adapted to abut against the support base of the ...

METHOD OF FORMING A SEMICONDUCTOR DIE CUTTING TOOL

In one embodiment, a method of singulating semiconductor die from a semiconductor wafer includes forming a material on a surface of a semiconductor wafer and reducing a thickness of portions of the material. Preferably, the thickness of the material is reduced near where singulation openings are to be formed in the semiconductor wafer. 1. (canceled)2. (canceled)3. (canceled)4. (canceled)5. (canceled)6. (canceled)7. (canceled)8. (canceled)9. (canceled)10. (canceled)11. (canceled)12. (canceled)13. (canceled)14. (canceled)15. (canceled)16. (canceled)17. (canceled)18. (canceled)19. (canceled)20. A method of forming a tool for a semiconductor wafer comprising:forming the tool to reduce a thickness of a material formed on a semiconductor wafer;forming the tool with a cutting tip and cutting surfaces that are configured to penetrate into the material to form reduced thickness regions in the material; andforming an accumulation region of the tool with a recess having a first volume for accepting portions of the material displaced from within the material by the penetration.21. The method of wherein forming the tool with the cutting tip and cutting surfaces includes forming the cutting surfaces to have a cutting volume and wherein the first volume is no less than the cutting volume.22. (canceled)23. (canceled)25. (canceled)26. (canceled)27. The method of further including forming a cutting tip and a cutting surface adjacent to the cutting tip and extending from the cutting tip toward a central support section and terminating in a distal end of the cutting surface wherein the cutting surface is attached to the central support section.28. The method of further including forming a depth stop spaced a first distance from the cutting tip toward the central support section wherein a cutting volume is formed by a portion of the cutting surface extending from the cutting tip to the depth stop and wherein the cutting volume is approximately equal to the first volume.29. The method of ...

FIXED ABRASIVE GRAIN WIRE SAW, ITS MANUFACTURING METHOD, AND METHOD OF CUTTING WORKPIECE BY USING IT

A fixed abrasive grain wire saw that can improve precision of a cut plane of a workpiece and grinding efficiency and can prolong product life, a method of manufacturing the fixed abrasive grain wire saw, and a method of machining a workpiece by the fixed abrasive grain wire-saw. To fasten abrasive grains to an outer circumferential surface of a metal core wire, a plurality of transfer rollers, in each of which many tiny holes filled with an adhesive are formed, are used to transfer the adhesive to the outer circumferential surface of the core wire to form, on the outer circumferential surface, a plurality of rows of punctiform adhesive layers that are linearly arrayed in the axial direction at regular intervals. The abrasive grains are tentatively fastened to the adhesive layers, after which the abrasive grains are permanently fastened with a metal plated layer formed by electrolytic deposition. 1. A fixed abrasive grain wire saw formed by fastening many abrasive grains having a uniform granularity to an outer circumferential surface of a core wire with high strength as a single layer by use of a binder layer that covers an outer circumferential surface of the core wire , wherein:many punctiform adhesive layers are coated to the outer circumferential surface of the core wire so as to be apart from one another and are linearly placed along an axis of the core wire at regular intervals to form at least three adhesives layer rows; andthe abrasive grains are tentatively fastened by the adhesive layers and are then permanently fastened by the binder layer, and abrasive grains placed on each two mutually adjacent adhesive layers are fastened in a state in which the abrasive grains are mutually spaced.2. The fixed abrasive grain wire saw according to claim 1 , wherein:the core wire is made of a meal wire; andthe binder layer is made of a plated metal.3. The fixed abrasive grain wire saw according to claim 2 , wherein the adhesive layer is made of a rubber-based adhesive to ...

LASER PROCESSING METHOD, SEMICONDUCTOR MEMBER MANUFACTURING METHOD, AND LASER PROCESSING DEVICE

There is provided a laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object. The laser processing method includes a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface, and a second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step. 1: A laser processing method for cutting a semiconductor object along a virtual plane facing a surface of the semiconductor object in the semiconductor object , the method comprising:a first step of forming a plurality of first modified spots along the virtual plane to obtain first formation density, by causing laser light to enter into the semiconductor object from the surface; anda second step of forming a plurality of second modified spots along the virtual plane so as to obtain second formation density higher than the first formation density, by causing laser light to enter into the semiconductor object from the surface after the first step.2: The laser processing method according to claim 1 , wherein in the first step claim 1 , the first modified spots are formed so that a plurality of fractures respectively extending from the plurality of first modified spots are not connected to each other.3: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are formed so that a plurality of fractures respectively extending from the plurality of second modified spots are connected to each other.4: The laser processing method according to claim 1 , wherein in the second step claim 1 , the plurality of second modified spots are ...

CUTTING METHOD

Provided is a cutting method of cutting a workpiece by using a cutting apparatus including a chuck table configured to hold the workpiece and a cutting unit having a cutting blade configured to cut the workpiece held by the chuck table and an ultrasonic vibrator configured to ultrasonically vibrate the cutting blade in a radial direction of the cutting blade. The cutting method includes a holding step of holding the workpiece by the chuck table, and a cutting step of performing ultrasonic cutting that cuts the workpiece by the cutting blade vibrated ultrasonically and normal cutting that cuts the workpiece by the cutting blade not vibrated ultrasonically on the same cutting line of a plurality of cutting lines set on the workpiece. 1. A cutting method of cutting a workpiece by using a cutting apparatus including a chuck table configured to hold the workpiece and a cutting unit having a cutting blade configured to cut the workpiece held by the chuck table and an ultrasonic vibrator configured to ultrasonically vibrate the cutting blade in a radial direction of the cutting blade , the cutting method comprising:a holding step of holding the workpiece by the chuck table; anda cutting step of performing ultrasonic cutting that cuts the workpiece by the cutting blade vibrated ultrasonically and normal cutting that cuts the workpiece by the cutting blade not vibrated ultrasonically on a same cutting line of a plurality of cutting lines set on the workpiece.2. The cutting method according to claim 1 , whereinin the cutting step, after the ultrasonic cutting is performed on a part of the same cutting line, ultrasonic vibration is stopped, and the normal cutting is performed from a position at which the ultrasonic cutting is performed last on the same cutting line without moving the cutting blade in an indexing feed direction. The present invention relates to a cutting method of cutting a workpiece by using a cutting apparatus including a cutting unit having an ultrasonic ...

A Method of Machining Brittle Materials

A method of cutting (e.g. micro-milling) brittle materials where a protective ductile layer is present on the brittle material during the cutting step. The method offers an improved edge quality of the machined profile relative to previous cutting (e.g. micro-milling) techniques. A machined product obtained by or obtainable by this method is disclosed. 1. A method of cutting a channel in a brittle material comprising:providing a composite material in which a layer of ductile material is arranged on a surface of a brittle material; andcutting a channel through the layer of ductile material, removing the portion of the ductile material that is arranged over the portion of the brittle material that is to be cut, and into the brittle material to provide a machined composite.2. The method of claim 1 , wherein the layer of ductile material is in direct contact with the surface of the brittle material.3. The method of claim 1 , wherein providing the composite material comprises applying a layer of a ductile material to the surface of a brittle material to provide the composite material.4. The method of further comprising removing the ductile material from the machined composite to provide a machined sample of the brittle material.5. The method of claim 1 , wherein at least a portion of the channel is arcuate in a plane parallel to the surface of the brittle material.6. The method of claim 1 , wherein the channel comprises a plurality of curves and/or angles in a plane parallel to the surface of the brittle material.7. The method of claim 1 , wherein the ductile material is selected from the group consisting of aluminum claim 1 , chromium claim 1 , copper and alloys thereof.8. The method of claim 1 , wherein the ductile material is an acrylic polymer.9. The method of claim 1 , wherein the ductile material is an epoxy resin.10. The method of claim 1 , wherein the brittle material is from 50 μm to 100 mm thick.11. The method of claim 1 , wherein the channel that is cut into ...

GEMSTONE

The present invention provides a gemstone comprising a girdle dividing the gemstone into a pavilion and a crown having a table surface; a tier of facets cut into the pavilion at a position immediately below the girdle; and a continuous groove. The groove facilitates mounting to a collet having a mounting rim. The continuous groove is located in the tier of the facets cut into the pavilion. The placement of the tier of facets and continuous groove does not obstruct light return. 1. A gemstone comprising:a) a girdle dividing the gemstone into a pavilion and a crown having a table surface;b) a tier of facets cut into the pavilion at a position immediately below the girdle; andc) a continuous groove to facilitate mounting to a collet having a mounting rim, the continuous groove located in the tier of facets cut into the pavilion wherein the placement of the tier of facets and continuous groove does not obstruct light return.2. The gemstone according to claim 1 , wherein the gemstone is a diamond.3. The gemstone according to claim 1 , wherein the continuous groove has a width of between 0.5% and 5% of the girdle diameter claim 1 , and a depth of between 0.5% and 5% of the girdle diameter.4. The gemstone according to wherein the continuous groove has a shape selected from the group consisting of rectangular claim 1 , half round claim 1 , v-shaped claim 1 , oval shaped claim 1 , u-shaped claim 1 , and trapezoidal claim 1 ,5. A gemstone according to mounted in a mounting rim.6. A basket-type collet comprising the gemstone mounted in the mounting rim of .7. A ring comprising the gemstone mounted in the mounting rim of .8. A jewelry finding selected from the group consisting of money clips claim 5 , rings claim 5 , earrings claim 5 , bracelets claim 5 , pendants claim 5 , necklaces claim 5 , bangles claim 5 , brooches and lockets and comprising at least one gemstone mounted in the mounting rim of .9. A barrel-type collet comprising the gemstone mounted in the mounting rim of ...