기판의 표면을 처리하기 위한 조성물, 방법 및 장치

... 처리 조성물을 및 처리 조성물을 사용함으로써 기판의 표면을 처리하는 방법, 및 처리 조성물을 위에 지니는 반도체 또는 MEMS 기판이 본원에 개시된다.

A METHOD OF PROCESSING A SILICON WAFER WITH A DESIGN HAVING A THROUGH CAVITY

La présente invention décrit un procédé de traitement d’une plaquette de silicium avec une structure à cavité traversante. Le procédé est appliqué selon les exigences suivantes, successivement : en effectuant une implantation d’ions sur une plaquette de silicium ou une plaquette gravée ; en implantant un substrat factice ; en liant la plaquette de silicium à la plaquette gravée ; en effectuant un meulage et un polissage, et en amincissant la plaquette gravée à une profondeur d’exposition du motif ; en effectuant une liaison ; et en décollant le substrat factice. En comparaison avec l'art antérieur, la présente invention peut être utilisée de manière standard, et la qualité du produit peut être efficacement garantie. Le produit présente une rentabilité élevée et un excellent effet technique. La présente invention présente des valeurs économiques et sociales prévisibles relativement élevées. Figure à publier avec l’abrégé : Fig. 1 The present invention describes a method of treating a silicon wafer with a through cavity structure. The process is applied according to the following requirements, successively: by ion implantation on a silicon wafer or etched wafer; implanting a dummy substrate; bonding the silicon wafer to the etched wafer; by grinding and polishing, and slimming the engraved wafer to a depth of exposure of the pattern; by making a connection; and detaching the dummy substrate. In comparison with the prior art, the present invention can be used in a standard manner, and the quality of the product can be effectively guaranteed. The product has a high profitability and an excellent technical effect. The present invention has relatively high predictable economic and social values. Figure to be published with the abstract: Fig. 1

TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME

METHOD FOR REMOVING RESIDUES FORMED DURING THE MANUFACTURE OF MEMS DEVICES

A method of removing residues from an integrated device, in particular residues resulting from processing in HF vapor, is disclosed wherein the fabricated device is exposed to dry water vapor for a period of time sufficient to dissolve the residues in the dry water vapor.

Process for producing structural body and etchant for silicon oxide film

A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Process for masking and removal of residue from complex shapes

A process is provided for etching a mask layer and removal of residue from a structure having an area sheltered from directional etching. The structure has a shape that forms a silhouette area obstructed from being etched by anisotropic bombardment originating from a first direction, and a mask formed over the mask layer over the structure; A first etch process removes at least a part of the mask layer and retains at least a part of mask layer in the sheltered area. A second etch process removes at least a part of the mask layer in the sheltered area by hydrogen based microwave plasma etching.

PROCEDURE AND DEVICE FOR THE TREATMENT OF A SEMICONDUCTOR SURFACE

Sublimation in forming a semiconductor

The present disclosure includes apparatuses and methods related to sublimation in forming a semiconductor. In an example, a method may include forming a sacrificial material in an opening of a structure, wherein the sacrificial material displaces a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to sub-atmospheric pressure.

Microelectromechanical device manufacturing process

The present invention relates to micro electromechanical systems (MEMS) devices and more specifically to a process for manufacturing MEMS devices having at least one suspended structural element. The present invention seeks to provide an improved method for manufacture of MEMS devices having improved safety and increased yield and throughput compared to conventional EDP immersion process techniques. MEMS devices are made using a modified dissolution process that removes, in a selective etch step, inactive silicon to release an active silicon device from a sacrificial substrate. The present invention uses a selective etchant in conjunction with a commercial spray acid processing tool to provide a dissolution process with improved throughput, improved repeatable and uniform etch rates and reduction in the number of processing steps and chemical containment for improved safety. When the etch process is complete, the solvent spray is turned off and a spray of de-ionized water is directed onto ...

NEAR CRITICAL AND SUPERCRITICAL OZONE SUBSTRATE TREATMENT AND APPARATUS FOR SAME

Disclosed is a method and apparatus for treating a substrate with a reaction solvent formed of supercritical ozone in a feed phase. The feed phase can be aqueous, e.g., formed of heated, deionized water, nonaqueous, e.g., formed of a dense fluid, such as supercritical carbon dioxide, liquid carbon dioxide, supercritical nitrogen or combinations the dense fluids or the feed phase can be a mixture of aqueous and nonaqueous phases.

MEMS device with over-travel stop structure and method of fabrication

A MEMS device comprises a substrate, a proof mass spaced apart from a surface of the substrate, and an over-travel stop structure. The over-travel stop structure includes a lateral stop structure and a cap coupled to the lateral stop structure. The MEMS device is fabricated to include relatively small gap sections and relatively large gap regions separating the lateral stop structure from the proof mass. The larger gap regions are covered by the cap and the smaller gap sections are exposed from the gap. During fabrication, removal of particles from the smaller gap sections is facilitated by their exposure from the cap and removal of particles from the larger gap regions underlying the cap is facilitated by their larger size. The lateral stop structure may be cross-shaped to limit deflection of the proof mass along two in-plane axes. The cap limits deflection of the proof mass along an out-of-plane axis.

COMPOSITION FOR TREATING SURFACE OF SUBSTRATE, METHOD AND DEVICE

Verfahren zur Bearbeitung eines Siliziumwafers mit einer den Wafer durchziehenden Hohlraumstruktur

Verfahren zum Herstellen eines Siliziumwafers mit einer den Wafer durchziehenden Hohlraumstruktur, dadurch gekennzeichnet, dass nacheinander die folgenden Schritte ausgeführt werden:1) Bereitstellen eines strukturierten Siliziumwafers, der einen nicht-exponierten Hohlraum aufweist, und eines weiteren als Dummy-Substrat dienenden Siliziumwafers und Ionenimplantation von Wasserstoffionen oder Heliumatomen an einer zur Verbindung dienenden Seite des den nicht-exponierten Hohlraum aufweisenden strukturierten Siliziumwafers, wobei die Implantationstiefe in Bezug auf die Oberfläche in einem Bereich von 1 µm bis 0,001 µm liegt,2) Aufeinanderlegen einer zur Verbindung dienenden Seite des als Dummy-Substrat dienenden Siliziumwafers und der implantierten Seite des den nicht-exponierten Hohlraum aufweisenden strukturierten Siliziumwafers, und Bonden des als Dummy-Substrat dienenden Siliziumwafers mit dem den nicht-exponierten Hohlraum aufweisenden strukturierten Siliziumwafer,3) Schleifen und Polieren ...

Microelectromechanical system device and method for preparing the same for subsequent processing

A method for preparing a microelectomechanical system (MEMS) device for subsequent processing is disclosed. The method includes establishing an anti-stiction material on exposed surfaces of the MEMS device. The exposed surfaces include at least an interior surface of a chamber and an external surface of the MEMS device. The anti-stiction material is selectively removed from at least a portion of the external surface via a plasma sputtering process under controlled conditions.

Micro-mechanical component production process

In the production of a micro-mechanical component by producing an element (4) on a sacrificial layer (2) which is then removed using a hydrofluoric acid-containing etching medium, etching of the sacrificial layer (2) is preceded by application of an aluminium metallisation (5) and is succeeded by removal of a superficial contamination layer (6) from the metallisation (5) by a further etching operation. Preferably, the element (4) is protected during this further etching (preferably sputter etching, plasma etching or reactive ion etching) operation by a protective cap (8) which may be left in place as part of a housing for the element (4).

Verfahren zur Herstellung einer strukturierten Oberfläche

Die Erfindung schlägt ein Verfahren zur Herstellung einer mikromechanischen Struktur vor, wobei in einem ersten Verfahrensschritt durch ein Ätzverfahren in einem Substrat eine strukturierte Oberfläche erzeugt wird und in einem zweiten Verfahrensschritt zumindest teilweise Rückstände aus der strukturierten Oberfläche entfernt werden, dadurch gekennzeichnet, dass beim zweiten Verfahrensschritt ein Umgebungsdruck für das Substrats eingestellt wird, der kleiner ist als 60 Pa, und eine Substrattemperatur eingestellt wird, die größer ist als 150°C.

ISOLATED PLANAR MESOGYROSCOPE

An inertial sensor includes a mesoscaled disc resonator comprises of micro-machined substantially thermally non-conductive wafer with low coefficient of thermal expansion for sensing substantially in-plane vibration, a rigid support coupled to the resonator at a central mounting point of the resonator, at least one excitation electrode within an interior of the resonator to excite internal in-plane vibration of the resonator, and at least one sensing electrode within the interior of the resonator for sensing the internal in-plane vibration of the resonator. The inertial sensor is fabricated by etching a baseplate, bonding the substantially thermally non-conductive wafer to the etched baseplate, through-etching the wafer using deep reactive ion etching to form the resonator, deposition a thin conductive film on the through-etched wafer. The substantially thermally non-conductive wafer may comprise a silicon dioxide glass wafer, which is a silica glass wafer or a borosilica glass wafer, or a silicon-germanium wafer.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method having a cleaning process for reliably cleaning the inside of a trench to the trench bottom with low damage. SOLUTION: A compound liquid of chelating agent-added hydrogen peroxide water and ammonia water is used as a chemical 5 in a cleaning process after forming a trench 3. Accordingly, the trench can be reliably cleaned to the bottom without addition of an external force such as an ultrasonic wave. Owing to such cleaning step, the trench 3 can be reliably cleaned and removed of foreign materials including a protection film 4 to the bottom though the trench 3 having an aspect ratio of 5 and over is formed. COPYRIGHT: (C)2012,JPO&INPIT ...

Verfahren zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche

Verfahren zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials (4) auf einer Oberfläche (2, 3), aufweisend die Schritte:- Definiertes Ausrichten einer Fotomaske (10) gegenüber der Oberfläche (2, 3);- Belichten der Oberfläche (2, 3) mittels einer oberhalb der Fotomaske (10) angeordneten VUV-Lampe (20), wobei die VUV-Lampe (20) eine Strahlung mit maximaler Energie emittiert; wobei- während des Belichtens der Oberfläche (2, 3) zwischen der VUV-Lampe (20) und der Fotomaske (10) ein inertes Gas (30) geleitet wird; und wobei- während des Belichtens der Oberfläche (2, 3) zwischen der Fotomaske (10) und der Oberfläche (2, 3) ein Gasgemisch (40) aus einem definierten Anteil Stickstoff und einem definierten Anteil Sauerstoff und/oder ein Gasgemisch mit hoher Transmission im VUV-Wellenlängenbereich geleitet wird.

PROCEEDED WITH TREATMENT Of a SURFACE Of a SEMICONDUCTOR, CORRESPONDING DEVICE AND SEMICONDUCTOR ASSOCIATES

L'invention concerne un procédé de traitement d'une surface (2) d'un semi-conducteur (1B) et un dispositif de traitement correspondant. La surface est occupée par des premières molécules du semi-conducteur ayant des liaisons extérieures saturées par de l'hydrogène. Dans le procédé, on envoie un faisceau (30) d'ions positifs fortement chargés et à basse énergie vers la surface, et on lui applique une tension de décélération (U2 ) à proximité de la surface. De cette manière, les ions extraient sans contact des électrons des premières molécules, libérant les atomes d'hydrogène saturant les liaisons extérieures correspondantes. On envoie ensuite un produit saturant les liaisons extérieures pendantes, de façon à former des secondes molécules d'un composé isolant. Application au nettoyage de surface, à la gravure et à la nano-fabrication.

APPARATUS FOR DETECTING AN ANALYTE WITH SURFACE ENHANCED RAMAN SCATTERING

A surface enhanced Raman scattering (SERS) active nanoassembly comprising anisotropically assembled gold nanoparticles in a monolayer double row immobilized on a glass layer is disclosed. The discrete gold nanoparticles are separated by interparticle gaps of 0.5-10 nm that provide hotsites where appropriate excitation creates surface plasmon resonaces and regions of strong and localized electromagnetic fields that enhance Raman signal substantially, 10-10fold. An appropriate SERS apparatus comprising the nanoassembly for detecting an analyte is also disclosed. In addition, a method for producing the nanoassembly as well as the application of the nanoassembly or the apparatus comprising the nanoassembly in a method for measuring the SERS signal of an analyte is disclosed. 17-. (canceled)8. An apparatus for detecting an analyte , comprising: a glass layer; and', 'gold nanoparticles immobilized on the glass layer;', 'wherein the gold nanoparticles are anisotropically assembled as a monolayer double row having a long axis, and wherein the gold nanoparticles have a spherical morphology,, 'a surface enhanced Raman scattering (SERS) active nanoassembly, comprisingwherein an analyte is adsorbed onto the surface enhanced Raman scattering (SERS) active nanoassembly;a laser radiation source; andan objective lens;a detector;wherein the laser radiation source provides incident radiation on the analyte and the detector is positioned to receive scattered radiation from the analyte; andwherein the analyte is detected by the scattered radiation.911-. (canceled)12. The apparatus of claim 8 , wherein the laser radiation source is a krypton ion laser that provides incident radiation having a wavelength of 400-800 nm or a helium-neon gas laser that provides incident radiation having a wavelength of 500-650 nm.13. The apparatus of claim 8 , wherein the detector is a multichannel charge coupled device (CCD).1420-. (canceled) The present disclosure relates to an anisotropic surface ...

Using sacrificial polymer materials in semiconductor processing

In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others.

Method for producing a structured surface

PROCEEDED WITH TREATMENT Of a SURFACE Of a SEMICONDUCTOR, CORRESPONDING DEVICE AND SEMICONDUCTOR ASSOCIATES

Method of forming semiconductor device

RESIDUE REMOVAL

In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.

METHOD OF REMOVING POLYMER COATING FROM AN ETCHED TRENCH

Apparatus for detecting an analyte with surface enhanced raman scattering

A surface enhanced Raman scattering (SERS) active nanoassembly comprising anisotropically assembled gold nanoparticles in a monolayer double row immobilized on a glass layer is disclosed. The discrete gold nanoparticles are separated by interparticle gaps of 0.5-10 nm that provide hotsites where appropriate excitation creates surface plasmon resonaces and regions of strong and localized electromagnetic fields that enhance Raman signal substantially, 104-1015 fold. An appropriate SERS apparatus comprising the nanoassembly for detecting an analyte is also disclosed. In addition, a method for producing the nanoassembly as well as the application of the nanoassembly or the apparatus comprising the nanoassembly in a method for measuring the SERS signal of an analyte is disclosed.

USING SACRIFICIAL POLYMER MATERIALS IN SEMICONDUCTOR PROCESSING

In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others. 1. A semiconductor processing method , comprising:performing a wet cleaning process to clean a structure comprising features and openings between the features while preventing any drying of the structure;depositing a first solvent in the openings while continuing to prevent drying of the structure;displacing the first solvent with a polymer solution comprising a second solvent and a polymer resin while continuing to prevent drying of the structure;baking the polymer solution to remove at least some of the second solvent to form a sacrificial polymer material in the openings, wherein the sacrificial polymer material comprises the polymer resin and at least a remainder of the second solvent;removing the sacrificial polymer material; andforming an additional material in the openings after removing the sacrificial polymer material.2. The method of claim 1 , wherein displacing the first solvent with the polymer solution comprises over filling the openings with the polymer solution such that the formed sacrificial polymer material overfills the openings.37-. (canceled)8. The method of claim 1 , wherein forming the sacrificial polymer material in the openings acts to prevent the features from toppling.9. A semiconductor processing method claim 1 , comprising:using a wet cleaning process to clean openings between features in a structure;forming a first solvent in the openings;displacing the first solvent in the openings with a polymer solution comprising a second solvent ...

METHOD AND DEVICE FOR TREATING A SEMICONDUCTOR SURFACE

金属微細構造体のパターン倒壊抑制用処理液及びこれを用いた金属微細構造体の製造方法

Herstellungsverfahren für Halbleitervorrichtung

Bei einem Herstellungsverfahren für eine Halbleitervorrichtung wird in einem Halbleitersubstrat aus Silizium oder einer Siliziumverbindung eine Vertiefung ausgebildet, und Fremdstoffe einschließlich der Schutzschicht in der Vertiefung werden mit einer Reinigungslösung entfernt. Die Reinigungslösung enthält eine Mischlösung aus Wasserstoffperoxidwasser, dem ein Chelator zugefügt ist, einer basischen Lösung und Wasser.

금속 미세 구조체의 패턴 도괴 억제용 처리액 및 이것을 이용한 금속 미세 구조체의 제조 방법

... 일부 또는 전부가 불소로 치환되어 있어도 되는 알킬기 및 알케닐기 중 어느 하나로 이루어진 히드로카르빌기를 갖고, 옥시에틸렌 구조를 포함하는 패턴 도괴 억제제를 함유하는 금속 미세 구조체의 패턴 도괴 억제용 처리액 및 상기 처리액을 이용한 금속 미세 구조체의 제조 방법이다.

METHOD FOR MANUFACTURING A STRUCTURED SURFACE

A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set.

Method of modifying an etched trench

A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The process is particularly suitable for preparing a trench for subsequent argon ion milling. Printhead integrated circuits fabricated by a process according to the invention have improved ink channel surface profiles and/or surface properties.

SEMICONDUCTOR DEVICE MANUFACTURING METHOD

PROBLEM TO BE SOLVED: To prevent adverse effects on a semiconductor device due to washing and drying processing in a semiconductor device manufacturing process. SOLUTION: A semiconductor device manufacturing method includes a preparation step for preparing a semiconductor wafer, an element forming step for forming a semiconductor function element on the semiconductor wafer, a drying step for applying drying processing by an isopropyl alcohol vapor to the semiconductor wafer after the element formation, a heating step for heating the semiconductor wafer after the drying processing, and a washing step for applying RA washing by a fuming nitric acid to the semiconductor wafer after the heating processing. COPYRIGHT: (C)2008,JPO&INPIT ...

Method for producing a structured surface

A high aspect ratio MEMS trench structure is fabricated using an anisotropic plasma etching process to pattern a substrate 1 using a photoresist mask 5. Subsequently a plasma cleaning process is used to remove etch byproducts from the sidewalls of the trench. The plasma cleaning gasses may include oxygen, hydrogen, nitrogen, forming gas, or ammonia and is characterised in that the ambient pressure is less than 60 Pa and a substrate temperature is greater than 150°C. The sidewall etch-byproduct removal process is also used to remove sacrificial polyimide material.

Method for producing a structured surface

Method of modifying an etched trench

A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The process is particularly suitable for preparing a trench for subsequent argon ion milling. Printhead integrated circuits fabricated by a process according to the invention have improved ink channel surface profiles and/or surface properties.

Method for manufacturing a structured surface

A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set.

Freezing a sacrificial material in forming a semiconductor

The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.

Near critical and supercritical ozone substrate treatment and apparatus for same

A processing method of nano and micron

Manufacturing method of semiconductor device

In a manufacturing method of a semiconductor device, a depression is formed in a semiconductor substrate made of silicon or silicon compound semiconductor, and foreign substances including a protection layer in the depression is removed with a cleaning solution. The cleaning solution includes a mixed solution of hydrogen peroxide water to which a chelator is added, a basic solution, and water.

METHOD, MATERIALS AND PROCESS FOR NATIVE OXIDE REMOVAL AND REGROWTH OF DIELECTRIC OXIDES FOR BETTER BIOSENSOR PERFORMANCE

Methods of removing native oxide layers and depositing dielectric layers having a controlled number of active sites on MEMS devices for biological applications are disclosed. In one aspect, a method includes removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands in vapor phase to volatize the native oxide layer and then thermally desorbing or otherwise etching the volatized native oxide layer. In another aspect, a method includes depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate. In yet another aspect, a method includes both removing a native oxide layer from a surface of the substrate by exposing the substrate to one or more ligands and depositing a dielectric layer selected to provide a controlled number of active sites on the surface of the substrate.

Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device includes preparing a semiconductor wafer, forming a semiconductor function element on the semiconductor wafer, drying the semiconductor wafer after forming the semiconductor function element by using an isopropyl alcohol vapor, heating the semiconductor wafer after drying the semiconductor wafer, and performing an RA cleaning on the semiconductor wafer after heating the semiconductor wafer by using a fuming nitric acid.

METHOD OF REMOVING POLYMER COATING FROM AN ETCHED TRENCH

Process for producing structural body and etchant for silicon oxide film

A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

MEMS PRESSURE SENSOR AND METHOD OF MANUFACTURING THE SAME

A method of manufacturing a pressure sensor is provided. The method includes: providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate; forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench; forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film; forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench; etching the cover layer using the mask layer so as to form the pressure trench in the cover layer; removing the etch stop assembly at a bottom of the pressure trench; and removing the mask layer. 1. A method of manufacturing a pressure sensor , comprising:providing a substrate, wherein a bottom electrode and a pressure sensing film are disposed on the substrate;forming an etch stop assembly on the pressure sensing film at a location corresponding to a pressure trench;forming a cover layer on the substrate covering the etch stop assembly and the pressure sensing film;forming a mask layer on the cover layer, wherein an opening of the mask layer is formed above the etch stop assembly and exposes a portion of the cover layer at the location corresponding to the pressure trench;etching the cover layer using the mask layer so as to form the pressure trench in the cover layer;removing the etch stop assembly at a bottom of the pressure trench; andremoving the mask layer.2. The method according to claim 1 , wherein forming the etch stop assembly further comprises:forming an etch stop layer on the substrate covering the pressure sensing film;forming a mask layer on the etch stop layer, wherein the mask layer is formed covering a portion of the etch stop layer at the location corresponding to the pressure trench;etching the etch stop layer using the mask layer to remove portions ...

POLARIZATION DEPENDENT SURFACE ENHANCED RAMAN SCATTERING SYSTEM

A surface enhanced Raman scattering (SERS) active nanoassembly comprising anisotropically assembled gold nanoparticles in a monolayer double row immobilized on a glass layer is disclosed. The discrete gold nanoparticles are separated by interparticle gaps of 0.5-10 nm that provide hotsites where appropriate excitation creates surface plasmon resonaces and regions of strong and localized electromagnetic fields that enhance Raman signal substantially, 10-10fold. An appropriate SERS apparatus comprising the nanoassembly for detecting an analyte is also disclosed. In addition, a method for producing the nanoassembly as well as the application of the nanoassembly or the apparatus comprising the nanoassembly in a method for measuring the SERS signal of an analyte is disclosed. 17-. (canceled)8. A polarization dependent surface enhanced Raman scattering system , comprising: a glass layer; and', 'gold nanoparticles immobilized on the glass layer;', 'wherein the gold nanoparticles are anisotropically assembled as a monolayer double row having a long axis, and wherein the gold nanoparticles have a spherical morphology,, 'a surface enhanced Raman scattering (SERS) active nanoassembly, comprisingwherein an analyte is adsorbed onto the surface enhanced Raman scattering (SERS) active nanoassembly;a laser radiation source;an objective lens;a wave plate; anda detector;wherein the laser radiation source is disposed above the wave plate which is disposed above the SERS active nanoassembly which is disposed above the objective lens which is disposed above the detector,wherein the laser radiation source provides incident radiation on the analyte and the detector is positioned to receive scattered radiation from the analyte; andwherein the analyte is detected by the scattered radiation.911-. (canceled)12. The polarization dependent surface enhanced Raman scattering system of claim 8 , wherein the laser radiation source is a krypton ion laser that provides incident radiation having a ...

TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME

There are provided a processing liquid for suppressing pattern collapse of a fine metal structure, containing a pattern collapse suppressing agent that has a hydrocarbyl group containing any one of an alkyl group and an alkenyl group, both of which may be substituted partly or entirely by a fluorine atom, and contains an oxyethylene structure, and a method for producing a fine metal structure using the same.

Verfahren zur Herstellung einer feinen Struktur unter Einsatz einer Verarbeitungsflüssigkeit zur Verhinderung eines Musterzusammenbruchs

Verfahren zur Herstellung einer feinen Struktur, umfassend, nach einem Nassätzen oder Trockenätzen, einen Spülschritt unter Verwendung einer Verarbeitungsflüssigkeit zur Unterdrückung eines Musterzusammenbruchs der feinen Struktur, die mindestens eine Verbindung umfasst, die aus der Gruppe, bestehend aus einem Ammoniumhalogenid mit einer Fluoralkylgruppe, einer Betainverbindung mit einer Fluoralkylgruppe und einer Aminoxidverbindung mit einer Fluoralkylgruppe, ausgewählt ist,wobei in dem Spülschritt das Muster der feinen Struktur mit der Verarbeitungsflüssigkeit in Kontakt gebracht wird, worauf die Verarbeitungsflüssigkeit durch Wasser ersetzt wird und die feine Struktur getrocknet wird, undwobei die feine Struktur mindestens ein Material enthält, das aus der Gruppe, bestehend aus Titannitrid, Wolfram, Hafniumoxid, Tantal und Titan, ausgewählt ist.

Process to produce a structured surface

Method for processing silicon wafer with through cavity structure

一種貫穿空腔結構矽片的加工方法，其特徵在於：其依次按照下述要求進行操作：對矽片或圖形片進行離子注入；植入假底，使用矽片與圖形片鍵合；磨拋，減薄圖形片至露出圖形的深度；鍵合； 剝離假底。相對於現有技術而言，本發明操作規範，產品質量能夠得到有效保證；且產品的性價比高，綜合技術效果優良；其具有可預期的較為巨大的經濟價值和社會價值。

COATING OF NANOWIRES

Behandlungslösung zur Verhinderung eines Musterzusammenbruchs in einem feinen Strukturkörper und Verfahren zur Herstellung eines feinen Strukturkörpers, bei dem diese eingesetzt wird

Verarbeitungsflüssigkeit zur Unterdrückung eines Musterzusammenbruchs einer feinen Struktur, die ein Mittel zur Unterdrückung eines Musterzusammenbruchs umfasst, das eine Hydrocarbylgruppe aufweist, die eine von einer Alkylgruppe und einer Alkenylgruppe enthält, die beide teilweise oder vollständig durch ein Fluoratom substituiert sein können, und das eine Oxyethylenstruktur enthält,wobei das Mittel zur Unterdrückung eines Musterzusammenbruchs mindestens eines ist, das aus der Gruppe, bestehend aus einem Hydrocarbylalkanolamid, einem Polyoxyethylenhydrocarbylamin und einem Perfluoralkylpolyoxyethylenethanol, ausgewählt ist, undwobei die feine Struktur mindestens ein Material enthält, das aus Titannitrid, Titan, Ruthenium, Rutheniumoxid, Strontiumrutheniumoxid, Aluminiumoxid, Hafniumoxid, Hafniumsilikat, Hafniumnitridsilikat, Platin, Tantal, Tantaloxid, Tantalnitrid, Nickelsilizid, Nickel-Silizium-Germanium und Nickel-Germanium ausgewählt ist.

Herstellungsverfahren für eine Detektionsvorrichtung und Detektionsvorrichtungen

Die Erfindung betrifft ein Herstellungsverfahren für eine Detektionsvorrichtung mit den Schritten: Ausbilden mindestens eines sensitiven Bereichs (10) mit mindestens einer freiliegenden Sensierfläche (12) auf und/oder in einem Halbleitersubstrat (14), Verkapseln zumindest eines Teils des Halbleitersubstrats (14) derart, dass die mindestens eine Sensierfläche (12) luft-, flüssigkeits- und/oder partikeldicht von einer äußeren Umgebung abgedichtet wird, und Ausbilden mindestens einer Öffnung derart, dass mindestens ein Luft-, Flüssigkeits- und/oder Partikelzugang von der äußeren Umgebung zu der mindestens einen Sensierfläche (12) geschaffen wird, wobei vor dem Ausbilden der mindestens einen Öffnung mindestens eine erste Test- und/oder Kalibriermessung ausgeführt wird, wozu mindestens eine Sensorsignal des mindestens einen sensitiven Bereichs (10) mit der mindestens einen luft-, flüssigkeits- und/oder partikeldicht abgedichteten Sensierfläche (12) als mindestens ein erstes Test- und/oder Kalibriersignal ...

Residue removal during semiconductor device formation

In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices.

Verfahren zur Bearbeitung eines Siliziumwafers mit einer den Wafer durchziehenden Hohlraumstruktur

Es wird ein Verfahren zur Herstellung eines Siliziumwafers mit einer den Wafer durchziehenden Hohlraumstruktur bereitgestellt ist, welches dadurch gekennzeichnet ist, dass nacheinander die folgenden Schritte ausgeführt werden: Ionenimplantation für einen als Dummy-Substrat dienenden Siliziumwafer oder einen strukturierten Wafer, der einen Hohlraum aufweist, Auflegen des Dummy-Substrats auf den strukturierten Wafer und Bonden des als Dummy-Substrat dienenden Siliziumwafers mit dem strukturierten Wafer, Schleifen und Polieren, um den strukturierten Wafer bis zu einer Tiefe abzuschleifen, bei der dessen Hohlraumstrukturen freiliegen, , Bonden von zwei nach den vorstehenden Schritten bearbeiteten Waferstrukturen und Abtragen der Dummy-Substrate. Gegenüber dem Stand der Technik zeichnet sich die vorliegende Erfindung durch ordnungsgemäße Vorgänge, eine effektiv gewährleistete Produktqualität, ein hervorragendes Preis-Leistungsverhältnis, eine ausgezeichnete umfassende technische Wirkung und ...

Used for inhibiting metallic fine structure body of the pattern of the treating liquid and the collapse of the metal using the same method of manufacturing fine structure body

금속 미세 구조체의 패턴 도괴 억제용 처리액 및 이것을 이용한 금속 미세 구조체의 제조 방법

... 일부 또는 전부가 불소로 치환되어 있어도 되는 알킬기 및 알케닐기 중 어느 하나로 이루어진 히드로카르빌기를 갖고, 옥시에틸렌 구조를 포함하는 패턴 도괴 억제제를 함유하는 금속 미세 구조체의 패턴 도괴 억제용 처리액 및 상기 처리액을 이용한 금속 미세 구조체의 제조 방법이다.

VERFAHREN UND VORRICHTUNG ZUR BEHANDLUNG EINER HALBLEITEROBERFLÄCHE

COMPOSITION FOR TREATING SURFACE OF SUBSTRATE, METHOD AND DEVICE

VERFAHREN UND VORRICHTUNG ZUR BEHANDLUNG EINER HALBLEITEROBERFLÄCHE

A method of manufacturing MEMS pressure sensor and electronic device

PROCESS FOR PRODUCING STRUCTURAL BODY AND ETCHANT FOR SILICON OXIDE FILM

NONAQUEOUS CLEANING LIQUID AND METHOD FOR ETCHING PROCESSING OF SILICON SUBSTRATE

A nonaqueous cleaning liquid comprising a fluoroalkanol, a quaternary ammonium hydroxide, and an organic solvent. Compounds represented by formulae (1) and (2). Fluoroalkanol compounds include (1) H(CF2)aCH2-OH and (2) F(CF2)b(CH2)c-OH In which a and b are each an integer of from 2 to 6, and c is an integer of 1 or 2.

PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF MICROSTRUCTURE, AND METHOD FOR PRODUCING MICROSTRUCTURE USING SAME

PROCESS FOR PRODUCING STRUCTURAL BODY AND ETCHANT FOR SILICON OXIDE FILM TO REMOVE COMPLETELY SACRIFICIAL LAYER AND FINE PARTICLES

PURPOSE: A process for producing structural body and etchant for silicon oxide film is provided to remove completely a sacrificial layer made of a silicon oxide film and fine particles attached to the micro structural body within a short period of time with a small amount of a solvent without any damage to the structural body having the micro structural body. CONSTITUTION: A process for producing a structural body comprises a substrate and a structural layer formed on the substrate through an air gap which structural layer functions as a micro movable element, the process comprises a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, and an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, followed by a cleaning treatment wherein the treating fluid used in the air gap-forming step is a supercritical ...

METHOD OF REMOVING POLYMER COATING FROM AN ETCHED TRENCH

A method of polymeric coating from sidewalls of en etched trench defined in silicon wafer [5] was provided The method comprises etching the wafer in a biased plasma etching chamber using 02 plasma. The chamber temperature is in the range of 90-180 deg C.

MEMS pressure sensor manufacturing method and electronic device

METHOD, MATERIALS AND PROCESS FOR NATIVE OXIDE REMOVAL AND REGROWTH OF DIELECTRIC OXIDES FOR BETTER BIOSENSOR PERFORMANCE

METHOD FOR ACHIEVING STICTION-FREE HIGH-ASPECT-RATIO MICROSTRUCTURES AFTER WET CHEMICAL PROCESSING

A method for wet chemical processing of high-aspect-ratio microstructures and exiting the wet chemical processing while avoiding stiction between the high-aspect-ratio microstructures is provided. The method includes providing a substrate containing etched microstructures, removing etch residue from the substrate using wet chemical processing, rinsing the substrate with an aqueous hydrogen fluoride solution after the wet chemical processing, and drying the substrate using an inert gas. 1. A substrate processing method , comprising:providing a substrate containing etched microstructures;removing etch residue from the etched microstructures using wet chemical processing;rinsing the substrate with an aqueous hydrogen fluoride solution after the wet chemical processing; anddrying the substrate using an inert gas to remove any water from the etched microstructures.2. The method of claim 1 , wherein the etched microstructures include semiconductor pillars disposed on the substrate claim 1 , the semiconductor pillars extending in a direction perpendicular to a surface of the substrate.3. The method of claim 2 , wherein the semiconductor pillars contain or consist of silicon.4. The method of claim 2 , wherein the etched microstructures have an aspect ratio (height/width) greater than about 10.5. The method of claim 2 , wherein the etched microstructures have an aspect ratio (height/width) greater than about 50.6. The method of claim 1 , wherein the etch residue includes an etch polymer claim 1 , an organic contamination claim 1 , or both an etch polymer and an organic contamination.7. The method of claim 1 , wherein the wet chemical processing includesexposing the substrate to an acidic aqueous solution;rinsing the substrate with deionized (DI) water to remove the acidic aqueous solution from the substrate; andexposing the substrate to a basic aqueous solution to clean and neutralize the substrate.8. The method of claim 7 , wherein the acidic aqueous solution contains a ...

METHOD OF PROCESSING NANO- AND MICRO-PORES

A method of processing nano- and micro-pores includes washing a substrate and cleaning a surface of the substrate; spin-coating photoresist, exposing the substrate and developing to form the substrate with a pattern; 3. depositing micro-nano metal particles on the surface of the substrate; wherein the micro-nano metal particles are centered on a magnetic core; and the surface of the magnetic core is plated with a metal nano-particle coating composed of a plurality of gold, silver or aluminum nanoparticles; removing the photoresist, and maintaining dot arrays of the micro-nano metal particles; applying laser irradiation and a strong uniform magnetic field on the substrate, so that the substrate is processed to form processed structures; and after the processed structures being formed into nano-/micro-pores with targeted pore size, shape and depth, stopping the laser irradiation and removing the strong uniform magnetic field. 1. A method of processing nano- or micro-pores , comprising:step 1: washing a substrate with deionized water, and cleaning a surface of the substrate with a plasma cleaner;step 2: spin-coating photoresist on the substrate, and then exposing the substrate and developing to form the substrate with a pattern;step 3: depositing micro-nano metal particles on the surface of the substrate; wherein the micro-nano metal particles are centered on a magnetic core, and a surface of the magnetic core is plated with a metal nano-particle coating composed of a plurality of gold, silver or aluminum nanoparticles;step 4: removing the photoresist and maintaining dot arrays of the micro-nano metal particles deposited on the surface of the substrate;step 5: exposing the substrate with surface deposited with the micro-nano metal particles using laser irradiation and applying a strong uniform magnetic field in a reaction chamber; wherein the magnetic core in the micro-nano metal particles guided by the strong uniform magnetic field drives the micro-nano metal ...

Verfahren und Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche

Die Erfindung betrifft ein Verfahren zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche (WO) eines Wafers (W), aufweisend die Schritte:a) Ausrichten einer Maske (2) gegenüber der Oberfläche (WO);b) Lokales Belichten der Oberfläche (WO) durch die Maske (2) mittels einer VUV Lichtquelle (3), wobei gleichzeitig ein Gasgemisch zugeführt wird, welches wenigstens Sauerstoff (02) enthält;c) Spülen der Oberfläche (WO) mit einem Gasgemisch, welches wenigstens Stickstoff (N2) und Sauerstoff (02) enthält, wobei die VUV Lichtquelle (3) ausgeschaltet ist;d) Wiederholen wenigstens der Schritte b) und c) bis das Entfernen und/oder Modifizieren des Polymermaterials abgeschlossen ist.Die Erfindung betrifft auch eine Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials (P) auf einer Oberfläche (WO) eines Wafers (W), aufweisend eine gegenüber der Oberfläche (WO) definiert ausrichtbare Maske (2), wobei mittels einer oberhalb der Maske angeordneten ...

Processing liquid for restraining pattern collapse of metal microscopic structure and manufacturing method of metal microscopic structure using the same

This invention provides a processing liquid capable of restraining pattern collapse of metal microscopic structures, and a manufacturing method of metal microscopic structures using the processing liquid. The processing liquid includes at least one selected from a group consisting of ammonium halide having fluoroalkyl group, betaine compound having fluoroalkyl group, and amine oxide compound having fluoroalkyl group.

TREATMENT SOLUTION FOR PREVENTING PATTERN COLLAPSE IN METAL FINE STRUCTURE BODY, AND PROCESS FOR PRODUCTION OF METAL FINE STRUCTURE BODY USING SAME

WAFER LEVEL HERMETIC BOND USING METAL ALLOY WITH RAISED FEATURE AND WETTING LAYER

Systems and methods for forming an encapsulated device include a substantially hermetic seal which seals a device in an environment between two substrates. The substantially hermetic seal is formed by an alloy of two metal layers, one having a lower melting temperature than the other. The metal layers may be deposited two substrates, along with a raised feature formed under at least one of the metal layers. The two metals may form an alloy of a predefined stoichiometry in at least two locations on either side of the midpoint of the raised feature. The formation of the alloy may be improved by the use of an organic wetting layer adjacent to the lower melting temperature metal. Design guidelines are set forth for reducing or eliminating the leakage of molten metal into the areas adjacent to the bondlines. 1. A method for encapsulating a device with a seal comprising:forming a first layer of a first metal on at least one of a first substrate and a second substrate;forming a second layer of a second metal adjacent to the first layer of the first metal, wherein the second metal has a lower melting point than the first metal;forming at least one raised feature protruding from a bonding surface and into at least one of the first layer and the second layer;forming a wetting layer of an organic material on at least one of the first substrate and the second substrate and adjacent to the lower melting point second metal, andbonding the first substrate and the second substrate with a bondline of an alloy formed from the first metal and the second metal wherein the wetting layer is driven off at a temperature of alloy formation.2. The method of claim 1 , further comprising:forming the raised feature before forming the first layer or the second layer of the first metal on the at least one of the first and the second substrate.3. The method of claim 1 , further comprising:forming at least one void adjacent to the raised feature.4. The method of claim 1 , wherein the bondline is ...

Method of processing nano- and micro-pores

A method of processing nano- and micro-pores includes washing a substrate and cleaning a surface of the substrate; spin-coating photoresist, exposing the substrate and developing to form the substrate with a pattern; 3. depositing micro-nano metal particles on the surface of the substrate; wherein the micro-nano metal particles are centered on a magnetic core; and the surface of the magnetic core is plated with a metal nano-particle coating composed of a plurality of gold, silver or aluminum nanoparticles; removing the photoresist, and maintaining dot arrays of the micro-nano metal particles; applying laser irradiation and a strong uniform magnetic field on the substrate, so that the substrate is processed to form processed structures; and after the processed structures being formed into nano-/micro-pores with targeted pore size, shape and depth, stopping the laser irradiation and removing the strong uniform magnetic field.

Method of removing residues formed during the manufacture of MEMS systems

A method of removing residues from an integrated device, in particular residues resulting from processing in HF vapor, is disclosed wherein the fabricated device is exposed to dry water vapor for a period of time sufficient to dissolve the residues in the dry water vapor.

METHOD AND DEVICE FOR LOCAL REMOVAL AND/OR MODIFICATION OF A POLYMER MATERIAL ON A SURFACE

METHOD AND DEVICE FOR TREATING A SEMICONDUCTOR SURFACE

The invention concerns a method for treating a surface (2) of a semiconductor (1B) and a corresponding treating device. The surface is taken up by first molecules of the semiconductor having external bonds saturated with hydrogen. The method consists in sending a beam (30) of ions highly charged and with low energy towards the surface, and applying thereto a deceleration voltage (U2) in the proximity of the surface. In this way, the ions extract without making contact the electrons of the first molecules, releasing the hydrogen atoms saturating the corresponding external bonds. Then a product saturating the pendant external bonds is sent so as to form second molecules of an insulating compound. The invention is useful for surface cleaning, etching and nano-manufacturing.

Etch release residue removal using anhydrous solution

A method of making a microelectromechanical systems (MEMS) device includes etching away a sacrificial material layer to release a mechanical element of the MEMS device. The MEMS device is formed at least partially on the sacrificial material layer, and the etching leaves a residue in proximity to the mechanical element. The residue is exposed to an anhydrous solution to remove the residue. The residue may be an ammonium fluorosilicate-based residue, and the anhydrous solution may include acetic acid, isopropyl alcohol, acetone, or any anhydrous solution that can effectively dissolve the ammonium fluorosilicate-based residue.

PROCESSING LIQUID FOR SUPPRESSING PATTERN COLLAPSE OF MICROSTRUCTURE, AND METHOD FOR PRODUCING MICROSTRUCTURE USING SAME

There are provided a processing liquid for suppressing pattern collapse of a microstructure formed of polysilicon which includes at least one compound selected from the group consisting of pyridinium halides containing an alkyl group having 12, 14 or 16 carbon atoms, and water; and a method for producing a microstructure using the processing liquid.

Composition for treating surface of substrate, method and device

Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.

Method for producing microscopic-structured body using processing liquid for restraining pattern collapse of microscopic-structured body

Polarization dependent surface enhanced Raman scattering system

A surface enhanced Raman scattering (SERS) active nanoassembly comprising anisotropically assembled gold nanoparticles in a monolayer double row immobilized on a glass layer is disclosed. The discrete gold nanoparticles are separated by interparticle gaps of 0.5-10 nm that provide hotsites where appropriate excitation creates surface plasmon resonaces and regions of strong and localized electromagnetic fields that enhance Raman signal substantially, 104-1015 fold. An appropriate SERS apparatus comprising the nanoassembly for detecting an analyte is also disclosed. In addition, a method for producing the nanoassembly as well as the application of the nanoassembly or the apparatus comprising the nanoassembly in a method for measuring the SERS signal of an analyte is disclosed.

Processing liquid for restraining pattern collapse of microscopic-structured body and method for producing microscopic-structured body using the same

The present invention provides a processing liquid for restraining pattern collapse of a microscopic-structured body consisting of polysilicon and including water and at least one selected from pyridinium halide having an alkyl group with the carbon number of 12, 14 or 16. The present invention also provides a method for producing a microscopic-structure body using the said processing liquid.

Composition for treating surface of substrate, method and device

Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.

Freezing a sacrificial material in forming a semiconductor

本發明包含與在形成一半導體中凍結一犧牲材料相關之設備及方法。在一實例中，一種方法可包含：經由凍結固化一結構之一開口中之一犧牲材料，其中該犧牲材料具有低於在一濕式清潔操作中使用之一溶劑之一沸點的一凍結點；及藉由將該犧牲材料曝露於一特定溫度範圍而經由昇華移除該犧牲材料。

USING SACRIFICIAL POLYMER MATERIALS IN SEMICONDUCTOR PROCESSING

In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others. 1. A semiconductor processing method , comprising:depositing, while preventing drying of a structure, a solvent in openings between features of the structure;displacing, while preventing drying of the structure, the solvent with a polymer material in the openings; andremoving the polymer material from the openings by performing a plasma ashing process to the structure.2. The method of claim 1 , further comprising depositing the polymer material in the openings such that the openings are over filled with the polymer material.3. The method of claim 1 , further comprising claim 1 , prior to depositing the solvent claim 1 , performing a wet cleaning process to clean the structure while preventing drying of the structure.4. The method of claim 3 , further comprising displacing liquid in the openings from the wet cleaning process with the polymer material.5. The method of claim 1 , further comprising removing claim 1 , from the structure claim 1 , ash generated by the plasma ashing process.6. The method of claim 5 , wherein removing the ash comprising vacuuming the ash from the structure.7. The method of claim 1 , wherein forming the polymer material in the openings prevents the features of the structure from toppling.8. A semiconductor processing method claim 1 , comprising:displacing a first solvent in openings between features of a structure with a polymer solution comprising a second solvent and a polymer resin;forming a polymer material in the openings from the ...

Semiconductor device and fabrication method

Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process.

USING SACRIFICIAL POLYMER MATERIALS IN SEMICONDUCTOR PROCESSING

In an example, a wet cleaning process is performed to clean a structure having features and openings between the features while preventing drying of the structure. After performing the wet cleaning process, a polymer solution is deposited in the openings while continuing to prevent any drying of the structure. A sacrificial polymer material is formed in the openings from the polymer solution. The structure may be used in semiconductor devices, such as integrated circuits, memory devices, MEMS, among others. 1. A semiconductor processing method , comprising:depositing a solvent in openings between features of a structure while preventing drying of the structure;displacing the solvent with a polymer solution while preventing drying of the structure;forming a polymer material by heating the structure to a first temperature; andremoving the polymer material by heating the structure to a second temperature2. The method of claim 1 , further comprising depositing the polymer solution in the openings such that the openings are over filled with the polymer solution.3. The method of claim 1 , further comprising claim 1 , prior to depositing the solvent claim 1 , performing a wet cleaning process to clean the structure while preventing drying of the structure.4. The method of claim 3 , further comprising displacing liquid in the openings from the wet cleaning process with the polymer solution.5. The method of claim 1 , wherein the second temperature is no more than 50° C. higher the first temperature.6. The method of claim 1 , wherein the second temperature is lower than the first temperature.7. The method of claim 1 , wherein forming the polymer material in the openings prevents the features of the structure from toppling.8. A semiconductor processing method claim 1 , comprising:displacing a first solvent in openings between features of a structure with a polymer solution comprising a second solvent and a polymer resin;baking the structure to a first temperature to form a ...

Process for producing a movable structure and etchant for silicon oxide film

A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Behandlungslösung zur Verhinderung eines Musterzusammenbruchs in einem feinen Metallstrukturkörper und Verfahren zur Herstellung eines feinen Metallstrukturkörpers, bei dem diese eingesetzt wird

Es werden eine Verarbeitungsflüssigkeit zur Unterdrückung eines Musterzusammenbruchs einer feinen Metallstruktur, die ein Mittel zur Unterdrückung eines Musterzusammenbruchs enthält, das eine Hydrocarbylgruppe aufweist, die eine von einer Alkylgruppe und einer Alkenylgruppe enthält, die beide teilweise oder vollständig durch ein Fluoratom substituiert sein können, und das eine Oxyethylenstruktur enthält, sowie ein Verfahren zur Herstellung einer feinen Metallstruktur, bei dem diese eingesetzt wird, bereitgestellt.

Behandlungslösung zur Verhinderung eines Musterzusammenbruchs in einem feinen Metallstrukturkörper und Verfahren zur Herstellung eines feinen Metallstrukturkörpers, bei dem diese eingesetzt wird

Es werden eine Verarbeitungsflüssigkeit zur Unterdrückung eines Musterzusammenbruchs einer feinen Metallstruktur, die mindestens eine Verbindung enthält, die aus der Gruppe, bestehend aus einem Ammoniumhalogenid mit einer Fluoralkylgruppe, einer Betainverbindung mit einer Fluoralkylgruppe und einer Aminoxidverbindung mit einer Fluoralkylgruppe, ausgewählt ist, sowie ein Verfahren zur Herstellung einer feinen Metallstruktur, bei der diese verwendet wird, bereitgestellt.

Verfahren zur Herstellung von mikromechanischen Bauelementen

Verfahren zur Herstellung von mikromechanischen Bauelementen, bei dem auf einem Substrat (1) ein Element (4) auf einer Opferschicht (2) erzeugt wird und dann die Opferschicht (2) unter dem Element (4) durch Opferschichtätzen mittels eines flußsäurehaltigen Ätzmediums entfernt wird, dadurch gekennzeichnet, daß vor dem Opferschichtätzen eine Aluminiummetallisierung (5) aufgebracht wird, daß nach dem Opferschichtätzen ein weiterer Ätzschritt erfolgt, bei dem eine oberflächliche Kontaminationsschicht (6) von der Aluminiummetallisierung (5) entfernt wird.

Void reduction on wafer bonding interface

Embodiments of the disclosure provide methods of bonding silicon wafers. An exemplary method may include cleaning the silicon wafers to remove residues. The method may also include performing a hydrophilic treatment to surfaces of the silicon wafers to increase surface energy. The method may also include pre-bonding the silicon wafers at room temperature. In addition, the method may include performing a rapid thermal annealing treatment to the pre-bonded silicon wafers to bond the silicon wafers.

Method for Performing a Wet Treatment of a Substrate

A method for performing a wet treatment of a structure is described in the present disclosure. An example method includes obtaining a structure comprising a first surface, wherein the first surfaces comprises a feature fixed at least at a first end to the first surface from which it protrudes, and wherein a sidewall of the feature faces and is positioned away from a second surface by a gap g, performing a wet treatment of the structure and subsequently, drying the structure, wherein performing the wet treatment comprises rinsing the structure by exposing it to a rinsing liquid comprising water, and exposing the structure, subsequently, to a sequence of liquids.

Method to release diaphragm in mems device

A method for releasing a diaphragm of a micro-electro-mechanical systems (MEMS) device at a stage of semi-finished product. The method includes pre-wetting the MEMS device in a pre-wetting solution to at least pre-wet a sidewall surface of a cavity of the MEMS device. Then, a wetting process after the step of pre-wetting the MEMS device is performed to etch a dielectric material of a dielectric layer for holding the diaphragm, wherein a sensing portion of the diaphragm is released from the dielectric layer.

METHOD OF ADDRESSING FILM LIFTOFF IN MEMS FABRICATION

A method of fabricating a MEMS device. A first spacer is formed above a CMOS substrate containing circuitry. Vias are formed within the first spacer. A first metal is formed above the first spacer and vias and patterned to form a MEMS element. A second spacer is formed above the MEMS element and first spacer. A via is formed within the second spacer. A second metal is formed above the second spacer and the via. A capping layer is formed above the second metal. The second metal is patterned to form a second MEMS element. The device is cleaned using a developer solution while the capping layer protects the second MEMS element. The first and second spacers are removed to release the first and second MEMS elements. 1. A method of fabricating a digital micromirror device , the method comprising:forming a first spacer above a CMOS substrate containing circuitry;forming hinge vias within the first spacer;depositing a first metal above the first spacer and hinge vias and patterning the first metal to form a hinge;forming a second spacer above the hinge and first spacer;forming a mirror via within the second spacer;depositing a second metal above the second spacer and the mirror via;forming a sacrificial dielectric capping layer on a surface of the second metal;patterning the second metal to form a mirror;cleaning the device using a developer solution; andremoving the first and second spacer layers to release the hinge and mirror.2. A method of fabricating a digital micromirror device , the method comprising:forming a first spacer above a CMOS substrate containing circuitry and patterning the first spacer to form openings for the hinge vias;depositing a hinge liner metal above the first spacer and hinge vias to form a hinge via liner;depositing a hinge via plug material above the hinge via liner to form a hinge via plug;removing hinge via liner metal and hinge via plug material from above the first spacer;depositing a hinge metal above the first spacer and hinge vias and ...

MEMS Microphone

The present invention provides a MEMS microphone, having a base and a capacitive system provided on the base. The capacitive system includes a diaphragm and a back plate. The MEMS microphone is further provided with s a supporting frame located between the back plate and the diaphragm. One end of the supporting frame is connected with the back plate, and the other end is connected with the diaphragm. The supporting frame divides the cavity into a first cavity body and a second cavity body. The supporting frame is provided with a connection channel. During the production process of the lo MEMS microphone, the etchant enters the first cavity body, and then enters the second cavity body, which prevents oxides from remaining in the microphone product and affecting the use of MEMS microphone. 1. A MEMS microphone , comprising:a base comprising a back cavity;a capacitive system provided on the base, the capacitive system including a diaphragm and a back plate arranged spaced from the diaphragm and forming a cavity with the diaphragm;a supporting frame located between the back plate and the diaphragm, one end of the supporting frame being connected with the back plate, and the other end being connected with the diaphragm; whereinthe supporting frame divides the cavity into a first cavity body located in a middle thereof and a second cavity body surrounding the first cavity body; the supporting frame is provided with a connection channel connecting the first cavity body and the second cavity body.2. The MEMS microphone as described in claim 1 , wherein the supporting frame is a hollow circular structure.3. The MEMS microphone as described in claim 1 , wherein the supporting frame is provided with through holes claim 1 , and the through hole connects the first cavity body with the second cavity body.4. The MEMS microphone as described in claim 1 , wherein the supporting frame comprises a plurality of supporting cylinders claim 1 , a gap is formed between adjacent supporting ...

SUBLIMATION IN FORMING A SEMICONDUCTOR

The present disclosure includes apparatuses and methods related to sublimation in forming a semiconductor. In an example, a method may include forming a sacrificial material in an opening of a structure, wherein the sacrificial material displaces a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to sub-atmospheric pressure. 1. A semiconductor processing apparatus , comprising:a carrier for holding a batch of semiconductor wafers, wherein the semiconductor wafers include structures with openings including a sacrificial material; receive the carrier from a moisture-containing atmosphere, wherein the batch of semiconductor wafers including the structures with the openings including the sacrificial material are exposed to the moisture-containing atmosphere;', 'change at least one of: a temperature, gas, or pressure within the chamber; and', 'decompose a sacrificial material from a solid to a gas via sublimation in response to the change in at least one of: the temperature, gas, or pressure within the chamber., 'a chamber configured to2. The apparatus of claim 1 , further comprising a pump configured to control the pressure within the chamber.3. The apparatus of claim 1 , wherein the pump is configured to change the pressure to sub-atmospheric pressure.4. The apparatus of claim 3 , wherein the pump is a vacuum.5. The apparatus of claim 1 , further comprising a gas purge configured to change the gas within the chamber.6. The apparatus of claim 5 , wherein the gas purge is configured to remove a reactive gas.7. The apparatus of claim 1 , further comprising a temperature control configured to control the temperature within the chamber.8. A semiconductor processing apparatus claim 1 , comprising:a carrier for holding a batch of semiconductor wafers, wherein the semiconductor wafers include structures with openings; receive the carrier;', 'perform a wet clean operation on the structures in an ...

SEMICONDUCTOR DEVICE AND FABRICATION METHOD

Semiconductor devices and fabrication methods are provided. In a semiconductor device, a semiconductor substrate includes a first electrode layer having a top surface coplanar with a top surface of the semiconductor substrate. A sacrificial layer is formed on the semiconductor substrate and the first electrode layer. A first mask layer made of a conductive material is formed on the sacrificial layer. The first mask layer and the sacrificial layer are etched until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer. A cleaning process is performed to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings. Conductive plugs are formed in the openings after the cleaning process. 1. A semiconductor fabrication method , comprising:providing a semiconductor substrate comprising a first electrode layer therein, wherein the first electrode layer has a top surface coplanar with a top surface of the semiconductor substrate;forming a sacrificial layer on the semiconductor substrate and the first electrode layer;forming a first mask layer on the sacrificial layer, wherein the first mask layer is made of a conductive material;etching the first mask layer and the sacrificial layer until a surface of the first electrode layer is exposed to form openings through the first mask layer and the sacrificial layer;performing a cleaning process to remove etch byproducts adhered to a surface of the first mask layer and adhered to sidewalls and bottom surfaces of the openings; andforming conductive plugs in the openings after the cleaning process.2. The method according to claim 1 , wherein the first mask layer is made of Ti claim 1 , TiN claim 1 , TaN claim 1 , Al claim 1 , or a combination thereof.3. The method according to claim 1 , wherein the first mask layer has a thickness of about 200 Å to about 300 Å.4. The method according to claim 1 , ...

RESIDUE REMOVAL

In an example, a method may include removing a material from a structure to form an opening in the structure, exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound, and removing the volatile compound by vaporization. The structure may be used in semiconductor devices, such as memory devices. 1. A method of forming a semiconductor device , comprising:removing a material from a structure to form an opening in the structure;exposing a residue, resulting from removing the material, to an alcohol gas to form a volatile compound; andremoving the volatile compound by vaporization.2. The method of claim 1 , wherein the volatile compound comprises a volatile solid and the vaporization comprises sublimation.3. The method of claim 1 , wherein removing volatile compound by vaporization comprises vaporizing the volatile compound as it is formed.4. The method of claim 1 , wherein removing the volatile compound by vaporization comprises removing volatile compound at a temperature and pressure so that the volatile compound vaporizes as the volatile compound is forming.5. The method of claim 1 , wherein removing the material from the structure comprises a dry removal process.6. The method of claim 1 , wherein the alcohol is anhydrous alcohol.7. The method of claim 1 , wherein the alcohol is methanol.8. The method of claim 1 , wherein the volatile solid material is aluminum trimethoxide.9. A method of forming a semiconductor device claim 1 , comprising:forming a plurality of features in a structure;reacting a residue, resulting from forming the features, with an alcohol gas to form a volatile compound; andremoving the volatile compound by vaporization.10. The method of claim 9 , wherein removing the volatile compound by vaporization comprises vaporizing the volatile compound while the residue is reacting with the alcohol gas.11. The method of claim 9 , wherein removing the compound by vaporization comprises vaporizing the volatile ...

Sublimation in forming a semiconductor

The present disclosure includes apparatuses and methods related to sublimation in forming a semiconductor. In an example, a method may include forming a sacrificial material in an opening of a structure, wherein the sacrificial material displaces a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to sub-atmospheric pressure.

Freezing a sacrificial material in forming a semiconductor

The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.

Mems device with over-travel stop structure and method of fabrication

A MEMS device comprises a substrate, a proof mass spaced apart from a surface of the substrate, and an over-travel stop structure. The over-travel stop structure includes a lateral stop structure and a cap coupled to the lateral stop structure. The MEMS device is fabricated to include relatively small gap sections and relatively large gap regions separating the lateral stop structure from the proof mass. The larger gap regions are covered by the cap and the smaller gap sections are exposed from the gap. During fabrication, removal of particles from the smaller gap sections is facilitated by their exposure from the cap and removal of particles from the larger gap regions underlying the cap is facilitated by their larger size. The lateral stop structure may be cross-shaped to limit deflection of the proof mass along two in-plane axes. The cap limits deflection of the proof mass along an out-of-plane axis.

METHOD FOR PROCESSING SILICON WAFER WITH THROUGH CAVITY STRUCTURE

A method for processing a silicon wafer with a through cavity structure. The method is operated in accordance with the following sequence: performing ion implantation on a silicon wafer or pattern wafer; implanting a dummy substrate; bonding the silicon wafer to the pattern wafer; performing grinding and polishing, and thinning the pattern wafer to a depth exposing the pattern; bonding; and peeling the dummy substrate. Compared with the prior art, the present invention is standard in operation, and the product quality can be effectively guaranteed. The product has high cost performance and excellent comprehensive technical effect. The present invention has expectable relatively large economic values and social values. 1. A method for processing a silicon wafer with a through cavity structure , comprising:(1) performing ion implantation on a silicon wafer or a pattern wafer;(2) implanting a dummy substrate, and bonding the silicon wafer to the pattern wafer;(3) grinding and polishing by a mechanical grinding or/and chemical polishing method, using the dummy substrate as a substrate, thinning the pattern wafer, grinding the pattern wafer to a depth of exposing the pattern, and exposing a cavity which is not originally exposed;(4) performing pattern-to-pattern bonding on the two silicon wafers subjected to the steps (1) and (2); and(5) peeling the dummy substrate playing a protective role by low-temperature annealing and microwave splitting operation to realize the silicon wafer of a through structure.2. The method for processing a silicon wafer with a through cavity structure according to claim 1 , further comprising:an implantation depth is in a range of 1 μm to 0.001 μm from the surface; and the hydrogen ion implantation are the energy of 10 to 120 KeV, the dose of 1E15 to 9E16, and the beam of 1-20 mA; andwherein for bonding the silicon wafer to the pattern wafer, a roughness of the silicon wafer is less than or equal to 5 nm; and the silicon wafer and the pattern ...

METHODS OF FORMING MEMS DEVICE

A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process. 1. A method of forming a micro-electro-mechanical systems (MEMS) device , comprising the following steps in the sequence set forth:providing a substrate;forming a tantalum nitride layer on the substrate;forming a dielectric anti-reflective coating layer on the tantalum nitride layer;coating a photoresist on the dielectric anti-reflective coating layer and performing a photolithographic process to form a photoresist pattern;sequentially etching the dielectric anti-reflective coating layer and the tantalum nitride layer to form a trench by using the photoresist pattern as an etching mask; andperforming an intensified ashing process and a wet cleaning process to remove the photoresist pattern and the dielectric anti-reflective coating layer, wherein the dielectric anti-reflective coating layer prevents the tantalum nitride layer from reacting with the photoresist to form tantalum-containing polymeric substances during the intensified ashing process.2. The method of claim 1 , wherein the dielectric anti-reflective coating layer is formed of silicon oxynitride.3. The method of claim 2 , wherein the dielectric anti-reflective coating layer is formed by a chemical vapor deposition process.4. The method of claim 1 , further comprising forming a nickel-iron layer on the substrate prior to forming the tantalum nitride layer.5. The method of claim 4 , wherein the nickel-iron ...

半导体器件的形成方法

一种半导体器件的形成方法，包括：提供衬底，所述衬底表面具有第一电极层，所述第一电极层表面具有牺牲层；在所述牺牲层表面形成第一掩膜层，所述第一掩膜层的材料为导电材料；在第一掩膜层表面形成图形化层，所述图形化层暴露出部分与第一电极层位置对应的第一掩膜层表面；以图形化层为掩膜，刻蚀所述第一掩膜层和牺牲层，直至暴露出第一电极层表面为止，在所述第一掩膜层和牺牲层内形成开口；进行清洗工艺，去除附着于第一掩膜层表面、以及开口的侧壁和底部表面的刻蚀副产物；在进行清洗工艺之后，在所述开口内形成导电插塞。所形成的半导体器件性能得到改善。

Treatment liquid for suppressing pattern collapse of metal microstructure and method for producing metal microstructure using the same

フルオロアルキル基を有するアンモニウムハライド、フルオロアルキル基を有するベタイン化合物、およびフルオロアルキル基を有するアミンオキシド化合物からなる群から選択される少なくとも一つを含む金属微細構造体のパターン倒壊抑制用処理液、及びこれを用いた金属微細構造体の製造方法である。

Double-hemisphere-structured miniature resonant gyroscope and manufacturing method thereof

本发明提供了一种双半球结构微型谐振陀螺仪及其制备方法，包括一个单晶硅基底、十六个均匀分布式电极、两个对称的微型半球谐振子、一个中心固定支撑柱，其中：中心固定支撑柱的上下两端分别连接两个微型半球谐振子，每个微型半球谐振子周围均匀分布八个电极；两个微型半球谐振子具有相同的中心轴，彼此独立、互不影响。本发明采用静电驱动的方式分别激励两个微型半球谐振子工作，驱动模态和检测模态分别相互匹配。本发明结合MEMS体硅加工工艺和表面硅加工工艺进行制作。本发明通过差分处理的方式减小离心力、向心力、共模噪声、二次非线性项等因素的影响；在单一器件上同时实现高带宽、高分辨率、高灵敏度、高动态范围等性能指标。

Processing liquid for suppressing pattern collapse of microstructure, and method for producing microstructure using same

폴리실리콘으로 이루어진 미세 구조체의 패턴 붕괴 억제용 처리액으로서, 탄소수 12, 탄소수 14 및 탄소수 16의 알킬기를 가지는 피리디늄 할라이드 중에서 적어도 하나와 물을 포함하는 미세 구조체의 패턴 붕괴 억제용 처리액, 및 이를 이용한 미세 구조체의 제조 방법이다. A treatment solution for inhibiting pattern collapse of a microstructure made of polysilicon, comprising: a treatment solution for inhibiting pattern collapse of a microstructure including water and at least one of pyridinium halides having an alkyl group having 12, 14, or 16 carbon atoms, and water It is a manufacturing method of the used microstructure.

Method and device for treating a semiconductor surface

본 발명은 반도체(1B)의 표면(2)을 처리하는 방법 및 대응하는 처리 장치에 관한 것이다. 표면은 수소로 포화되는 외부 접합제를 가지는 반도체의 제 1 분자에 의하여 만들어진다. 방법은 저에너지를 가지는 고대전된 이온의 빔(30)을 표면을 향하여 보내는 단계와, 표면의 부근에서 감속 전압(U 2 )을 빔에 적용하는 단계를 포함한다. 이러한 방식으로, 제 1 분자의 전자들의 접촉 및 대응하는 외부 접합제를 포화시키는 수소 원자의 방면 없이 이온들은 추출한다. 짝의 외부 접합제를 포화시키는 산출물은 절연성 성분의 제 2 분자를 형성하도록 보내진다. 본 발명은 표면 세정, 에칭 및 미소-제조에 유용하다.

Processing method of silicon wafer with through cavity structure

一种贯穿空腔结构硅片的加工方法，其特征在于：其依次按照下述要求进行操作：对硅片或图形片进行离子注入；植入假底，使用硅片与图形片键合；磨抛，减薄图形片至露出图形的深度；键合；剥离假底。相对于现有技术而言，本发明操作规范，产品质量能够得到有效保证；且产品的性价比高，综合技术效果优良；其具有可预期的较为巨大的经济价值和社会价值。

The manufacture method for the treatment of fluid with the microstructure using this treatment fluid for suppressing the pattern collapse of microstructure

本发明提供一种用于抑制由多晶硅形成的微细结构体的图案倒塌的处理液以及使用该处理液的微细结构体的制造方法，所述处理液含有选自具有碳原子数12、碳原子数14和碳原子数16的烷基的吡啶鎓卤化物中的至少一种及水。

Pliable pressure sensor production method based on " V " type groove array electrode

本发明属于柔性传感领域和微纳系统领域，具体为基于“V”型槽阵列电极的柔性压力传感器制作方法。基于“V”型阵列电极的柔性压力传感器制作方法，包括柔性压力传感器“V”型槽阵列电极的制备和碳纳米管/PDMS聚合物的制备，取制得的两个柔性压力传感器“V”型槽阵列电极分别作为上电极和下电极，碳纳米管/PDMS复合薄膜作为中间介电层，封装形成柔性压力传感器。针对金属材料与柔性衬底粘附性差的问题，本发明选用聚二甲基硅氧烷（PDMS）作为柔性衬底材料，金属Ag作为电极材料，并利用plasma工艺对PDMS柔性衬底表面进行修饰处理用于增强金属Ag与PDMS的粘附性，设计的“V”型槽阵列微电极结构有效解决了柔性压力传感器在发生较大形变时金属电极产生断裂的问题。

Method Of Forming An Ink Supply Channel

A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.

Treatment solution for preventing pattern collapse in metal fine structure body, and process for production of metal fine structure body using same

一种用于抑制金属微细结构体的图案倒塌的处理液，以及使用该处理液的金属微细结构体的制造方法，所述处理液含有具有烃基且包含氧亚乙基结构的图案倒塌抑制剂，所述烃基包含可以一部分或全部被氟取代的烷基和烯基的任一种。

Magnetic field/acceleration integrated sensor and integration process method

本发明公开了一种磁场/加速度集成传感器和集成化工艺方法，所述传感器包括设置在同一芯片上的磁场传感器和加速度传感器，磁场传感器磁敏感单元包括硅磁敏三极管和霍尔磁场传感器，其中，霍尔磁场传感器以原位掺杂纳米硅薄膜nc‑Si:H(n + )作为磁敏感层，加速度传感器敏感单元主要为原位掺杂的纳米多晶硅薄膜电阻，可实现对三维磁场和三轴加速度的同时测量。本发明基于微电子机械加工技术在SOI晶圆器件层上完成集成传感器芯片制作，并通过键合工艺和内引线压焊技术实现芯片封装，具有体积小、易于批量生产等特点。

Composition, method and device for treating the surface of a substrate

Process for producing a movable structure and etchant for silicon oxide film

A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Process for producing structural body and etchant for silicon oxide film

A structural body comprising a substrate and a structural layer formed on the substrate through an air gap in which the structural layer functions as a micro movable element is produced by a process comprising a film-deposition step of successively forming a sacrificial layer made of a silicon oxide film and the structural layer on the substrate, an air gap-forming step of removing the sacrificial layer by etching with a treating fluid to form the air gap between the substrate and the structural layer, and a cleaning step. By using a supercritical carbon dioxide fluid containing a fluorine compound, a water-soluble organic solvent and water as the treating fluid, the sacrificial layer is removed in a short period of time with a small amount of the treating fluid without any damage to the structural body.

Near critical and supercritical ozone substrate treatment and apparatus for same

Disclosed is a method and apparatus for treating a substrate with a reaction solvent formed of supercritical ozone in a feed phase. The feed phase can be aqueous, e.g., formed of heated, deionized water, nonaqueous, e.g., formed of a dense fluid, such as supercritical carbon dioxide, liquid carbon dioxide, supercritical nitrogen or combinations the dense fluids or the feed phase can be a mixture of aqueous and nonaqueous phases.

Composition for treating surface of substrate, method and device

Treatment compositions and methods of treating the surface of a substrate by using the treatment composition, and a semiconductor or MEMS substrate having the treatment composition thereon.

Microelectromechanical system device and method for preparing the same for subsequent processing

A method for preparing a microelectomechanical system (MEMS) device for subsequent processing is disclosed. The method includes establishing an anti-stiction material on exposed surfaces of the MEMS device. The exposed surfaces include at least an interior surface of a chamber and an external surface of the MEMS device. The anti-stiction material is selectively removed from at least a portion of the external surface via a plasma sputtering process under controlled conditions.

Non-aqueous cleaning agent and method for etching silicon substrate

Method and device for treating a semiconductor surface

The invention concerns a method for treating a surface (2) of a semiconductor (1B) and a corresponding treating device. The surface is taken up by first molecules of the semiconductor having external bonds saturated with hydrogen. The method consists in sending a beam (30) of ions highly charged and with low energy towards the surface, and applying thereto a deceleration voltage (U2) in the proximity of the surface. In this way, the ions extract without making contact the electrons of the first molecules, releasing the hydrogen atoms saturating the corresponding external bonds. Then a product saturating the pendant external bonds is sent so as to form second molecules of an insulating compound. The invention is useful for surface cleaning, etching and nano-manufacturing.

A kind of processing method through cavity structure silicon wafer

一种贯穿空腔结构硅片的加工方法，其特征在于：其依次按照下述要求进行操作：对硅片或图形片进行离子注入；植入假底，使用硅片与图形片键合；磨抛，减薄图形片至露出图形的深度；键合；剥离假底。相对于现有技术而言，本发明操作规范，产品质量能够得到有效保证；且产品的性价比高，综合技术效果优良；其具有可预期的较为巨大的经济价值和社会价值。

Method of removing a polymer coating from an etched trench

A method of removing a polymeric coating from sidewalls of an etched trench defined in a silicon wafer is provided. The method comprises etching the wafer in a biased plasma etching chamber using an O 2 plasma. The chamber temperature is in the range of 90 to 180° C.

Method for manufacturing semiconductor device

A method of manufacturing a semiconductor device includes preparing a semiconductor wafer, forming a semiconductor function element on the semiconductor wafer, drying the semiconductor wafer after forming the semiconductor function element by using an isopropyl alcohol vapor, heating the semiconductor wafer after drying the semiconductor wafer, and performing a cleaning on the semiconductor wafer after heating the semiconductor wafer by using a fuming nitric acid.

Use of a composition comprising ammonia and an alkanol for preventing pattern collapse when processing a pattern material having a linear spatial dimension of 50 nm or less

本発明は、線幅５０ｎｍ以下の線状空間寸法、アスペクト比４以上、又はそれらの組み合わせを有するパターン化材料層を備える基板のパターン崩壊防止処理用の、０．１～３質量％のアンモニアとＣ１～Ｃ４アルカノールとから主になる組成物の使用法に関する。

Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below.

本發明關於一種基本上由0.1至3重量%之氨及C 1 至C 4 烷醇組成之組成物之用途，其用於基板之抗圖案塌陷處理，該基板包含具有線寬為50 nm或以下之線距尺寸，大於或等於4之縱橫比，或其組合之圖案化材料層。

Manufacturing method for mirror devices

【課題】ミラーデバイスにおける損傷の発生及び異物の残存を抑制することができるミラーデバイスの製造方法を提供する。【解決手段】ミラーデバイスの製造方法は、ウェハ１０Ｗを用意する第１工程と、第１工程の後に、ベース部２１に対して第１可動部２２及び第２可動部２３が可動となるようにウェハ１０Ｗに第１スリット２２ａ及び第２スリット２３ａを形成し、それぞれが構造体に対応する複数の部分１２ＷＡをウェハ１０Ｗに形成する第２工程と、第２工程の後に、洗浄液によってウェハ１０Ｗを洗浄するウェット洗浄を実施する第３工程と、第３工程の後に、複数の部分１２ＷＡのそれぞれをウェハ１０Ｗから切り出す第４工程と、を備える。第２工程においては、エッチングによって、ウェハ１０Ｗのうち第１スリット２２ａ及び第２スリット２３ａ以外の部分に、ウェハ１０Ｗを貫通する流通孔２１ｂ，２２ｂ，２３ｂを形成する。【選択図】図７

Compositions, Methods, and Apparatus for Treating Surfaces of Substrates

처리 조성물을 및 처리 조성물을 사용함으로써 기판의 표면을 처리하는 방법, 및 처리 조성물을 위에 지니는 반도체 또는 MEMS 기판이 본원에 개시된다. Disclosed herein are methods of treating a surface of a substrate by using the treating composition and the treating composition, and a semiconductor or MEMS substrate having the treating composition thereon.

Mirror device manufacturing method and mirror unit manufacturing method

一种单轴高冲击加速度传感器及其制造方法

本发明涉及传感器技术领域，具体是一种单轴高冲击加速度传感器及其制造方法，所述单轴高冲击加速度传感器包括有SOI晶圆衬底、硅梁和惯性质量块，所述SOI晶圆衬底设置有方形槽，所述SOI晶圆衬底上设置有惠斯通电桥，所述惠斯通电桥的桥臂上设置有制作在硅梁上的应变电阻，本发明体积小、灵敏度高、可以承受高载荷，SOI晶圆衬底中间带有氧化层，拓宽单轴高冲击加速度传感器使用的温度范围；解决传统制备工艺PN结因高温而导致器件失效问题，一种单轴高冲击加速度传感器及其制造方法，采用反应离子刻蚀机对压阻区进行光刻，解决现有离子注入方式会产生侧向效应拓宽压阻区面积的问题，采用SOI衬底能够提高单轴高冲击加速度传感器使用寿命。

Verfahren und vorrichtung zur behandlung einer halbleiteroberfläche

異物除去方法、形成方法、物品の製造方法、異物除去装置、およびシステム

【課題】部材上の異物を除去する際の当該部材の損傷を低減することが可能な技術を提供する。【解決手段】凹凸パターンを有する第１部材上の異物を除去する異物除去方法は、前記第１部材上に組成物を供給する供給工程と、前記供給工程で前記第１部材上に供給された前記組成物に第２部材を押し付ける押付工程と、前記第１部材上の前記組成物と前記第２部材とが接触している状態で前記組成物を硬化する硬化工程と、前記第２部材を前記組成物とともに前記第１部材から分離させる分離工程と、を含み、前記供給工程では、前記硬化工程での前記組成物の硬化収縮率と、前記第１部材上に付着していると推定される異物の推定サイズとに基づいて、前記硬化工程で硬化された前記組成物のうち前記第１部材の前記凹凸パターンの凸部と前記第２部材との間の部分の厚さが前記推定サイズより大きくなるように、前記第１部材上への前記組成物の供給量を制御する。【選択図】図１

超疏水碳纳米管薄膜的制备方法

本发明涉及超疏水领域，尤其是超疏水碳纳米管薄膜的制备方法。该方法的步骤包括：（a）采用喷枪喷涂法在聚苯乙烯基板上沉积一层碳纳米管薄膜；（b）用去离子水清洗基材，并用辊子辊压碳纳米管薄膜表面；（c）将沉积碳纳米管薄膜的聚苯乙烯基板放入对流烤箱中加热，诱导基材的双轴收缩和起皱；（d）在收缩的碳纳米管薄膜上旋涂一层聚四氟乙烯薄膜，再放入丙酮浴和甲苯浴中去除聚苯乙烯基材。本发明能够实现大面积超疏水碳纳米管薄膜表面的制备，这些褶皱结构不仅稳定存在，具有导电性，能够应用在低粘抗冰的电磁屏蔽材料中。通过易收缩的基材加热收缩得到一种稳定的褶皱结构，利用这种微结构实现超疏水性；制备工艺简单，成本低，周期短。

超疏水碳纳米管薄膜的制备方法

本发明涉及超疏水领域，尤其是超疏水碳纳米管薄膜的制备方法。该方法的步骤包括：（a）采用喷枪喷涂法在聚苯乙烯基板上沉积一层碳纳米管薄膜；（b）用去离子水清洗基材，并用辊子辊压碳纳米管薄膜表面；（c）将沉积碳纳米管薄膜的聚苯乙烯基板放入对流烤箱中加热，诱导基材的双轴收缩和起皱；（d）在收缩的碳纳米管薄膜上旋涂一层聚四氟乙烯薄膜，再放入丙酮浴和甲苯浴中去除聚苯乙烯基材。本发明能够实现大面积超疏水碳纳米管薄膜表面的制备，这些褶皱结构不仅稳定存在，具有导电性，能够应用在低粘抗冰的电磁屏蔽材料中。通过易收缩的基材加热收缩得到一种稳定的褶皱结构，利用这种微结构实现超疏水性；制备工艺简单，成本低，周期短。

实现压力传感的mems器件单片集成结构及其方法

本发明属于传感器技术领域，实现压力传感的MEMS器件单片集成结构及其方法，其中：制作方法，包括以下步骤：(1)氧化，(2)化学气相淀积，(3)真空蒸镀，(4)刻蚀，(5)键合，(6)一步转移，(7)去胶烘焙，(8)图形化，(9)高温退火。MEMS器件单片集成结构，包括腔室密封层、硅衬底层、密封腔、二氧化硅绝缘层、氮化硅绝缘层、电极层及石墨烯压力感应层。本发明的MEMS压力传感器件对单层石墨烯一体成型惠斯通响应电路并借助单层石墨烯的压缩变阻特性实现压力传感，具有灵敏度高、承载压力范围宽、体积小、便于携带，且兼容半导体制造工艺和可批量化生产的特点。

Production method for a detection apparatus and detection apparatuses

A production method for a detection apparatus includes: forming at least one sensitive region having at least one exposed sensing area on and/or in a semiconductor substrate, encapsulating at least one part of the semiconductor substrate so that the at least one sensing area is sealed in an air-, liquid- and/or particle-tight fashion from an external environment, and forming at least one opening so that at least one air, liquid and/or particle access from the external environment to the at least one sensing area is created, wherein before forming the at least one opening, at least one first test and/or calibration measurement is performed, for which at least one sensor signal of the at least one sensitive region having the at least one sensing area sealed in an air-, liquid- and/or particle-tight fashion is determined as at least one first test and/or calibration signal. Also described are related detection apparatuses.

더 양호한 바이오센서 성능을 위한 자연 산화물 제거 및 유전체 산화물들의 재성장을 위한 방법, 물질들 및 프로세스

자연 산화물 층들을 제거하고, 제어된 개수의 활성 부위들을 갖는 유전체 층들을 생물학적 응용들을 위한 MEMS 디바이스들 상에 증착시키는 방법들이 개시된다. 일 양상에서, 방법은 자연 산화물 층을 휘발시키기 위해 기판을 증기상의 하나 이상의 리간드에 노출시킴으로써 기판의 표면으로부터 자연 산화물 층을 제거한 다음, 휘발된 자연 산화물 층을 열적으로 탈착시키거나 다른 방식으로 식각하는 단계를 포함한다. 다른 양상에서, 방법은 제어된 개수의 활성 부위들을 제공하도록 선택된 유전체 층을 기판의 표면 상에 증착시키는 단계를 포함한다. 또 다른 양상에서, 방법은 기판을 하나 이상의 리간드에 노출시킴으로써 기판의 표면으로부터 자연 산화물 층을 제거하는 단계 및 제어된 개수의 활성 부위들을 제공하도록 선택된 유전체 층을 기판의 표면 상에 증착시키는 단계 둘 모두를 포함한다.

探测装置的制造方法和探测装置

本发明涉及一种探测装置的制造方法，具有以下步骤：在半导体衬底(14)上和/或中构造具有至少一个暴露感测面(12)的至少一个敏感区域(10)，这样封装至少一部分半导体衬底(14)，使得至少一个感测面(12)相对于外部环境气密、液密和/或颗粒密封地密封，并且这样构造至少一个开口，使得实现从外部环境通向至少一个感测面(12)的至少一个空气、液体和/或颗粒通道，其中，在构造至少一个开口之前至少进行一次第一测试和/或校准测量，对此通过至少一个气密、液密和/或颗粒密封地密封的感测面(12)获知至少一个敏感区域(10)的至少一个传感器信号作为至少一个第一测试和/或校准信号。本发明还涉及探测装置。

Freezing a sacrificial material in forming a semiconductor

The present disclosure includes apparatuses and methods related to freezing a sacrificial material in forming a semiconductor. In an example, a method may include solidifying, via freezing, a sacrificial material in an opening of a structure, wherein the sacrificial material has a freezing point below a boiling point of a solvent used in a wet clean operation and removing the sacrificial material via sublimation by exposing the sacrificial material to a particular temperature range.

在形成半导体时冻结牺牲材料

本发明包含与在形成半导体时冻结牺牲材料相关的设备及方法。在实例中，一种方法可包含：经由冻结固化结构的开口中的牺牲材料，其中所述牺牲材料具有低于在湿法清洁操作中使用的溶剂的沸点的冻结点；及通过将所述牺牲材料暴露于特定温度范围而经由升华移除所述牺牲材料。

Foreign particle removing method, formation method, article manufacturing method, foreign particle removing apparatus, and system

The present invention provides a method of removing a foreign particle on a first member, comprising: supplying a composition on the first member; pressing a second member against the composition supplied on the first member; curing the composition on the first member after the pressing; and separating the second member together with the composition from the first member, after the curing, wherein in the supplying, a supply amount of the composition to be supplied on the first member is controlled based on a cure shrinkage rate of the composition in the curing and an estimated size of a foreign particle being presumably adhered on the first member, such that a thickness of a portion of the composition cured in the curing, which exists between the second member and the first member, becomes larger than the estimated size.

一种二维通道结构及其制备方法

本发明公开了一种二维通道结构及其制备方法。本发明采用支架支撑隔离层，获得多种二维通道结构，适用材料范围广；各层的间距精确可控，二维通道结构设计约束少，适用众多图案；适合工业化生产，图案精度高且适用于多种工业化生产方法，制作方法简单，成本低，用途广泛；工艺约束小，适合多种工艺；可以在隔离层上设计电路，通过外接电源或电信号或光源，或通过调制不同入口压强，控制离子或分子走向，达到能量转换或药物合成等目的；图案配合适当的探测手段(如拉曼光谱，荧光谱等)能有效实现单分子探测或其他生物探测及化学探测，可配合的系统广泛。

Verfahren und vorrichtung zum lokalen entfernen und/oder modifizieren eines polymermaterials auf einer oberfläche

Die Erfindung betrifft ein Verfahren zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials auf einer Oberfläche (WO) eines Wafers (W), aufweisend die Schritte: a) Ausrichten einer Maske (2) gegenüber der Oberfläche (WO); b) Lokales Belichten der Oberfläche (WO) durch die Maske (2) mittels einer VUV Lichtquelle (3), wobei gleichzeitig ein Gasgemisch zugeführt wird, welches wenigstens Sauerstoff (O2) enthält; c) Spülen der Oberfläche (WO) mit einem Gasgemisch, welches wenigstens Stickstoff (N2) und Sauerstoff (O2) enthält, wobei die VUV Lichtquelle (3) ausgeschaltet ist; d) Wiederholen wenigstens der Schritte b) und c) bis das Entfernen und/oder Modifizieren des Polymermaterials abgeschlossen ist. Die Erfindung betrifft auch eine Vorrichtung zum lokalen Entfernen und/oder Modifizieren eines Polymermaterials (P) auf einer Oberfläche (WO) eines Wafers (W), aufweisend eine gegenüber der Oberfläche (WO) definiert ausrichtbare Maske (2), wobei mittels einer oberhalb der Maske angeordneten VUV-Lichtquelle (3) die Oberfläche (WO) belichtbar ist, wobei in einen Zwischenraum zwischen dem Wafer (W) und der Maske (2) ein Gasgemisch, welches wenigstens Stickstoff (N2) und/oder Sauerstoff (O2) enthält, einleitbar ist. Der Kern der Erfindung besteht darin, dass die Vorrichtung einen verstellbaren Wafertisch (1) zur Halterung des Wafers (W) aufweist und dazu eingerichtet ist, in einem ersten Betriebszustand zwischen dem Wafer (W) und der Maske (2) einen Belichtungsspalt GE einzustellen und in einem zweiten Betriebszustand zwischen dem Wafer (W) und der Maske (2) einen Spülungsspalt (GP) einzustellen, welcher größer ist als der Belichtungsspalt (GE).

より良好なバイオセンサ性能のための自然酸化物除去及び誘電体酸化物の再成長の方法、材料及びプロセス

自然酸化物層を除去し、生物学的用途のためにＭＥＭＳデバイス上に制御された数の活性部位を有する誘電体層を堆積する方法が開示される。１つの態様では、方法は、自然酸化物層を揮発性にするために、基板を気相で１つ又は複数のリガンドに曝露し、次いで揮発性にされた自然酸化物層を熱脱着するか又はそうでなければエッチングすることによって、自然酸化物層を基板の表面から除去することを含む。別の態様では、方法は、制御された数の活性部位を基板の表面に提供するように選択された誘電体層を堆積することを含む。更に別の態様では、方法は、基板を１つ又は複数のリガンドに曝露することによって自然酸化物層を基板の表面から除去することと、基板の表面に制御された数の活性部位を提供するために選択された誘電体層を堆積することとの両方を含む。【選択図】図５Ｃ

对基材进行湿处理的方法

本申请涉及对基材进行湿处理的方法。对结构进行湿处理的方法，该方法包括：获得包括第一表面的结构，所述结构包括至少在第一端与第一表面固定并从其突出的特征件，其中，特征件的侧壁朝向第二表面并与其间隔开间隙g；对结构进行湿处理，之后对结构进行干燥，其中，进行湿处理包括将结构暴露于包含水的清洗液体对其进行清洗，以及之后将结构暴露于液体序列，其中序列的第一液体可与清洗液体混溶，序列的最后液体使得与第二表面和侧壁的接触角约为90°，其中，序列中的每个液体可与前面那个液体混溶，从而至少结构的第一表面在暴露于序列之前保持被清洗液体覆盖并且在暴露于序列的后面那个液体之前保持被序列的每个液体覆盖。

Void reduction on wafer bonding interface

Embodiments of the disclosure provide methods of bonding silicon wafers. An exemplary method may include cleaning the silicon wafers to remove residues. The method may also include performing a hydrophilic treatment to surfaces of the silicon wafers to increase surface energy. The method may also include pre-bonding the silicon wafers at room temperature. In addition, the method may include performing a rapid thermal annealing treatment to the pre-bonded silicon wafers to bond the silicon wafers.

이물 제거 방법, 형성 방법, 물품 제조 방법, 이물 제거 장치, 및 시스템

본 발명은 제1 부재 상의 이물 입자를 제거하는 방법으로서, 제1 부재 상에 조성물을 공급하는 공급 단계; 제1 부재 상에 공급된 조성물에 대해 제2 부재를 가압하는 가압 단계; 가압 단계 후에 제1 부재 상의 조성물을 경화하는 단계; 및 경화 단계 후에 제2 부재를 조성물과 함께 제1 부재로부터 분리하는 분리 단계를 포함하고, 공급 단계에서, 경화 단계에서의 조성물의 경화 수축률 및 제1 부재 상에 부착되어 있는 것으로 추정되는 이물 입자의 추정 크기에 기초하여, 경화 단계에서 경화되는 조성물 중, 제2 부재와 제1 부재 사이에 존재하는 부분의 두께가 추정 크기보다 커지도록, 제1 부재 상에 공급되는 조성물의 공급량이 제어되는 방법을 제공한다.

一种硅刻蚀方法

本发明公开了一种硅刻蚀方法。在刻蚀机中，利用RF电源生成钝化气等离子体并在以二氧化硅作掩膜的硅片表面附着钝化层；调节RF电源生成刻蚀气等离子体对硅片沿垂直方向进行刻蚀；通入清洁气体，清除硅片表面的残余生成物；循环上述步骤，直至达到刻蚀深度，则刻蚀结束。本发明首次实现C 4 F 6 在深硅刻蚀上的应用，并通过创新的三步循环刻蚀法，克服传统深硅刻蚀工艺中出现的侧壁钝化膜剥离，扇贝纹等问题；在步骤中使用新型电子气体，不仅可提高刻蚀效率，同时益于环保；通过设置清洁操作，能大大改善刻蚀陡直度及刻蚀底部形貌。

ミラーデバイスの製造方法

ミラーデバイスの製造方法は、ベース部、及び、ベース部において支持された可動部を含む構造体と、可動部に設けられたミラー層と、を備えるミラーデバイスの製造方法であって、支持層、デバイス層、及び、支持層とデバイス層との間に配置された中間層を有するウェハを用意する第１工程と、第１工程の後に、支持層、デバイス層及び中間層のそれぞれの一部をウェハから除去することで、ベース部に対して可動部が可動となるようにウェハにスリットを形成し、それぞれが構造体に対応する複数の部分をウェハに形成する第２工程と、第２工程の後に、洗浄液によってウェハを洗浄するウェット洗浄を実施する第３工程と、第３工程の後に、複数の部分のそれぞれをウェハから切り出す第４工程と、を備え、第２工程においては、中間層の一部を異方性エッチングによってウェハから除去する。

ミラーデバイスの製造方法

ミラーデバイスの製造方法は、ベース部、及び、ベース部において支持された可動部を含む構造体と、可動部に設けられたミラー層と、を備えるミラーデバイスの製造方法であって、支持層及びデバイス層を有するウェハを用意する第１工程と、第１工程の後に、支持層及びデバイス層のそれぞれの一部をエッチングによってウェハから除去することで、ベース部に対して可動部が可動となるようにウェハにスリットを形成し、それぞれが構造体に対応する複数の部分をウェハに形成する第２工程と、第２工程の後に、洗浄液によってウェハを洗浄するウェット洗浄を実施する第３工程と、第３工程の後に、複数の部分のそれぞれをウェハから切り出す第４工程と、を備え、第２工程においては、エッチングによって、ウェハのうちスリット以外の部分に、ウェハを貫通する流通孔を形成する。

Method of manufacturing mirror device

A method for manufacturing a mirror device includes a structure including a base portion and a movable portion supported on the base portion, and a mirror layer provided to the movable portion. The method includes a first step of preparing a wafer having a support layer and a device layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning for cleaning the wafer using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a circulation hole penetrating the wafer is formed at a part other than the slit in the wafer by the etching.

反射镜器件的制造方法

本发明的反射镜器件的制造方法，其中，反射镜器件具备：包含基底部和支撑在基底部的可动部的结构体、以及设置在可动部的反射镜层，本发明的反射镜器件的制造方法具备：准备具有支撑层和器件层的晶圆的第一工序；在第一工序之后，通过将支撑层和器件层中的各个的一部分通过蚀刻从晶圆去除，以可动部相对于基底部可动的方式在晶圆形成狭缝，并且将分别与结构体对应的多个部分形成在晶圆的第二工序；在第二工序之后，实施通过清洗液清洗晶圆的湿法清洗的第三工序；以及在第三工序之后，将多个部分中的各个从晶圆切出的第四工序，在第二工序中，通过蚀刻，在晶圆中的、狭缝以外的部分，形成贯通晶圆的流通孔。

Methods of forming MEMS device

A method of forming a micro-electro-mechanical systems (MEMS) device includes: providing a substrate; forming a tantalum nitride (TaN) layer on the substrate; forming a dielectric anti-reflective coating (DARC) layer on the TaN layer; coating photoresist on the DARC layer and etching the DARC: and TaN layers to form a trench; performing intensified ashing and wet cleaning processes to remove the photoresist and the DARC layer. The DARC layer can prevent the formation of tantalum-containing polymeric substances from a reaction between the TaN layer and the photoresist during the intensified ashing process.

一种悬空二维材料器件及规模化制备方法

本发明属于微纳系统领域，公开了一种悬空二维材料器件及规模化制备方法。本发明提供的悬空二维材料器件组成包括依次层叠设置的高掺杂底栅衬底、绝缘衬底、源漏电极和二维材料。本发明提供的制备方法步骤包括蒸镀金属材料、刻蚀对准标记、转移二维材料、刻蚀二维材料、刻蚀源漏电极、刻蚀源漏电极之间的沟道和释放二维材料条带。本发明所提供的悬空二维材料器件制备方法与现行微纳工艺兼容性良好、可规模化生产、安全性高、成本低，本发明所提供的悬空二维材料器件可用于基于谐振检测原理的温度传感器、微质量传感器、压力传感器、加速度计、陀螺仪等微系统。

一种mems器件复合金属牺牲层的制备方法

本发明公开了MEMS制造领域的一种MEMS器件复合金属牺牲层的制备方法，主要包括底部图形平坦化、多层金属复合及图形化等步骤。采用本发明的技术方案，可以实现极低间隙的牺牲层和触点制备，并且控制精度高、触点底部形貌好，从而提高MEMS器件的工艺一致性和成品率。

一种mems器件复合金属牺牲层的制备方法

本发明公开了MEMS制造领域的一种MEMS器件复合金属牺牲层的制备方法，主要包括底部图形平坦化、多层金属复合及图形化等步骤。采用本发明的技术方案，可以实现极低间隙的牺牲层和触点制备，并且控制精度高、触点底部形貌好，从而提高MEMS器件的工艺一致性和成品率。

Mems中磁性材料的刻蚀方法

本发明公开了一种MEMS中磁性材料的刻蚀方法，包括：步骤一、在底层结构上依次形成磁性材料层和刻蚀阻挡层；步骤二、进行第一次干法刻蚀将刻蚀区域中的刻蚀阻挡层去除，刻蚀气体采用Cl基气体，刻蚀副产物中包括含有Cl的聚合物；步骤三、采用IBE刻蚀工艺对沉积的聚合物进行第一次去除；步骤四、采用湿法清洗工艺对剩余的聚合物进行第二次去除并实现将聚合物完全去除；步骤五、进行第二次干法刻蚀将刻蚀区域中的磁性材料层去除。本发明能消除磁性材料层的刻蚀异常以及能提高磁性材料层的磁性的均匀性和产品良率。

잔류물 제거

예를 들어, 방법은 구조물에 개구를 형성하기 위해 구조물로부터 물질을 제거하는 단계, 물질을 제거하여 생성된 잔류물을 알코올 가스에 노출시켜 휘발성 화합물을 형성시키는 단계, 및 증발에 의해 휘발성 화합물을 제거하는 단계를 포함한다. 구조물은 메모리 디바이스와 같은 반도체 디바이스에 사용될 수 있다.

一种mems晶圆清洗方法

一种MEMS晶圆清洗方法，通过将晶圆浸泡在去胶液中，除去晶圆上的光阻；将聚合物清洗液喷洒到旋转的晶圆上，除去干法刻蚀过程中形成的聚合物；用侧壁喷头喷洒去电离水对晶圆冲洗，清洗掉残留在晶圆上的聚合物清洗液；用摆臂喷头喷洒高压二流体去电离水和常压去电离水，对晶圆进行冲洗并旋转甩干。本发明巧妙地运用了聚合物清洗液可以与水互溶的原理，迅速采用可短时间内喷出的侧壁去电离水冲洗，可避免晶圆冲水不及时带来的胶颗粒残留问题，与现有MEMS晶圆清洗工艺相比，本发明能提高高温循环状态下聚合物清洗液的使用寿命；省去了传统工艺中的IPA冲洗工艺。不仅可以显著降低企业成本，还能减少IPA废液带来的环境污染，符合绿色发展的理念。

ミラーデバイスの製造方法

ミラーデバイスの製造方法

Use of a composition consisting of ammonia and an alkanol for avoiding pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below

Use of a Composition Consisting of Ammonia and an Alkanol for Avoiding Pattern Collapse When Treating Patterned Materials with Line-Space Dimensions of 50 NM or Below

Described herein is a method of using a composition including 0.1 to 3% by weight ammonia and a C 1 to C 4 alkanol. The method includes using the composition for anti-pattern collapse treatment of a substrate including patterned material layers having line-space dimensions with a line width of 50 nm or less, aspect ratios of greater than or equal to 4, or a combination thereof.

Automatically controlled cleaning apparatus and controlled cleaning method for MEMS chip

An automatically controlled cleaning apparatus and a controlled cleaning method for MEMS chip includes a sampling and detection assembly, a MEMS chip rack and a spray cleaning assembly disposed above the sampling and detection assembly, and a deionized-water inlet and a water tank outlet communicating with an inlet of the spray cleaning assembly. A drain outlet, an atomic absorption spectrophotometer to detect an ion content in the cleaning fluid and an inlet of the water tank all communicate with a bottom-portion water outlet of the sampling and detection assembly are further included. Solenoid valves and micro pumps are disposed at the deionized-water inlet, at the outlet of the water tank, and at a water outlet of the sampling and detection assembly. An acquisition controller electrically connected to the solenoid valve and the micro pump is also included. According to the present invention, through automatic control and automatic test on cleaning after a MEMS chip is corroded, a cleaning effect and cleaning efficiency of the MEMS chip are significantly improved, a yield is improved, and production costs are reduced.

Method of manufacturing mirror device

Method of manufacturing mirror device

A method for manufacturing a mirror device, the method includes a first step of preparing a wafer having a support layer and a device layer; a second step of forming a slit in the wafer such that the movable portion becomes movable with respect to the base portion by removing a part of each of the support layer and the device layer from the wafer by etching and forming a plurality of parts each corresponding to the structure in the wafer, after the first step; a third step of performing wet cleaning for cleaning the wafer using a cleaning liquid after the second step; and a fourth step of cutting out each of the plurality of parts from the wafer after the third step. In the second step, a circulation hole penetrating the wafer is formed at a part other than the slit in the wafer by the etching.

ミラーデバイスの製造方法、及び、ミラーユニットの製造方法

【課題】可動部の動作への影響を抑制しつつ異物を除去可能なミラーデバイスの製造方法、及び、ミラーユニットの製造方法を提供する。【解決手段】ミラーデバイス１の製造方法は、ウェハ１０Ｗの加工によって、ベース部２１、第１可動部２２、第１可動部２２がベース部２１に対して揺動可能となるようにベース部２１と第１可動部２２とを互いに連結する第１連結部２４を形成すると共に、第１可動部２２にミラー層３を形成することで構造体７を形成する工程と、捕集部材９０による構造体７の異物捕集を行う工程と、を備える。【選択図】図９

反射镜器件的制造方法、及反射镜单元的制造方法

本发明的反射镜器件的制造方法具备：形成工序，通过晶圆的加工，形成基底部、可动部、及以所述可动部相对于所述基底部可摆动的方式将所述基底部和所述可动部相互连结的连结部，并且在所述可动部形成反射镜层，来形成结构体；以及收集工序，在所述形成工序之后，进行由收集构件的所述结构体的异物收集。本发明的反射镜单元的制造方法具备：密封工序，在所述收集工序之后，密封所述反射镜器件。

Mirror device manufacturing method and mirror unit manufacturing method

A mirror device manufacturing method includes a forming step of forming a structure by forming a base portion, a movable portion, and a coupling portion coupling the base portion and the movable portion to each other such that the movable portion is able to swing with respect to the base portion through processing of a wafer, and forming a mirror layer in the movable portion; and a collecting step of performing collection of foreign substances from the structure using a collection member after the forming step. A mirror unit manufacturing method includes a sealing step of sealing the mirror device after the collecting step.