Substrat-Bondingstruktur und Substrat-Bondingverfahren

Eine Vorrichtung (2) ist auf einer Hauptoberfläche eines Substrats (1) ausgebildet. Die Hauptoberfläche des Substrats (1) ist über das Bonding-Bauteil (11, 12, 13) in einem hohlen Zustand an die Unterseite des Gegensubstrats (14) gebondet. Eine Schaltung (17) und eine Höckerstruktur (26) sind auf der Oberseite des Gegensubstrats (14) ausgebildet. Die Höckerstruktur (26) ist in einem Bereich positioniert, der zumindest dem Bonding-Bauteil (11, 12, 13) entspricht, und weist eine größere Höhe als diejenige der Schaltungsstruktur (17) auf.

Elektronikbauelement und Verfahren zum Herstellen eines Elektronikbauelements

Ein Halbleiterbauelement enthält einen elektrisch leitenden Träger und einen über dem Träger angeordneten Halbleiterchip. Das Halbleiterbauelement enthält auch eine zwischen dem Träger und dem Halbleiterchip bereitgestellte poröse Diffusionslotschicht.

Leistungshalbleiterchip mit zwei Metallschichten auf einer Fläche

Ein Halbleiterchip beinhaltet eine Leistungstransistorschaltung mit mehreren aktiven Transistorzellen. Eine erste Lastelektrode und eine Steuerelektrode sind auf einer ersten Fläche des Halbleiterchips angeordnet, wobei die erste Lastelektrode eine erste Metallschicht beinhaltet. Eine zweite Lastelektrode ist auf einer zweiten Fläche des Halbleiterchips angeordnet. Eine zweite Metallschicht ist über der ersten Metallschicht angeordnet, wobei die zweite Metallschicht elektrisch gegenüber der Leistungstransistorschaltung isoliert ist und die zweite Metallschicht über einen Bereich der Leistungstransistorschaltung angeordnet ist, der mindestens eine der mehreren aktiven Transistorzellen umfasst.

Anordnung mit drei Halbleiterchips und Herstellung einer solchen Anordnung

Anordnung, umfassend:einen ersten Halbleiterchip, der eine erste Kontaktstelle auf einer ersten Seite umfasst;einen zweiten Halbleiterchip, der eine erste Kontaktstelle auf einer ersten Seite umfasst, wobei der zweite Halbleiterchip über dem ersten Halbleiterchip platziert ist und die erste Seite des ersten Halbleiterchips der ersten Seite des zweiten Halbleiterchips zugewandt ist; genau eine Schicht aus einem elektrisch leitfähigen Material, die zwischen dem ersten Halbleiterchip und dem zweiten Halbleiterchip angeordnet ist, wobei die genau eine Schicht aus einem elektrisch leitfähigen Material die erste Kontaktstelle des ersten Halbleiterchips elektrisch mit der ersten Kontaktstelle des zweiten Halbleiterchips koppelt;eine Passivierungsschicht, die einen Teil der ersten Seite des ersten Halbleiterchips außerhalb der ersten Kontaktstelle überdeckt; undeinen auf der Passivierungsschicht angebrachten dritten Halbleiterchip,wobei der erste und der zweite Halbleiterchip jeweils Leistungs-Halbleiterchips ...

Elektronisches Bauelement und Verfahren zur Herstellung eines elektronischen Bauelements

Es handelt sich um ein elektronisches Bauelement (100a, 100b, 200), insbesondere ein optoelektronisches Bauelement. Das elektronische Bauelement weist ein Substrat (124, 224) mit mindestens einer Halbleiterchip-Kontaktschicht (110a, 110b, 210) auf. Auf der Halbleiterchip-Kontaktschicht (110a, 110b, 210) ist ein Halbleiterchip (102, 202) angeordnet. Zwischen der Halbleiterchip-Kontaktschicht (110a, 110b, 210) und einer dem Substrat (124, 224) zugewandten Kontaktfläche (104, 204) des Halbleiterchips (102, 202) ist eine Poren aufweisende Verbindungsschicht (106, 206) angeordnet.

Sinterwerkstoff, Sinterverbindung sowie Verfahren zum Herstellen eines Sinterverbindung

Die Erfindung betrifft einen Sinterwerkstoff mit metallischen, mit einer organischen Beschichtung versehenen Strukturpartikeln. Erfindungsgemäß ist vorgesehen, dass nicht-organisch beschichtete, metallische und/oder keramische, beim Sinterprozess nicht ausgasende Hilfspartikel (7) vorgesehen sind. Ferner betrifft die Erfindung eine Sinterverbindung (1) sowie ein Verfahren zum Herstellen einer Sinterverbindung (1).

Miniaturisiertes SMD-Diodenpaket und Herstellungsverfahren dafür

Miniaturisiertes SMD-Diodenpaket (10), umfassend:einen Diodenchip (30a, 30b, 30c) mit einer TVS-Diode, einer Schottkydiode, einer Schaltdiode, einer Zenerdiode oder einer Gleichrichterdiode, der eine Bodenfläche aufweist, die mit einer positiven Elektrode (31) und einer negativen Elektrode (31) versehen ist;eine Bodenleiterplatte (50) aus einer Keramikplatte, einer Kunststoffplatte, einer Verbundplatte oder einer wärmeableitenden Platte;zwei Schaltkreiselektroden (56a, 56b), die separat auf der Bodenleiterplatte (50) aufgebracht sind und elektrisch mit der jeweiligen positiven Elektrode und negativen Elektrode (31) an der Bodenfläche des Diodenchips (30a, 30b, 30c) verbunden sind;eine Kapselung (75) aus einem Keramikmaterial oder einem Kunststoffmaterial zur Bildung einer integrierten Struktur mit der Bodenleiterplatte (50), um den Diodenchip (30a, 30b, 30c) und die zwei Schaltkreiselektroden (56a, 56b) zu kapseln, derart dass sich jeweils ein Ende der zwei Schaltkreiselektroden (56a, 56b ...

Metallic sintered bonding body and die bonding method

Provided is a metal sintered bonding body having an excellent heat cycle resistance and heat dissipation performance. The metal sintered bonding body according to the present invention bonds a substrate and a die. At least the center part and a corner part of a rectangular region in which the metal sintered body faces the die has a low porosity region having a porosity lower than the average porosity of the rectangular region. The low porosity region is located in a strip-shaped region in which the center line is a diagonal of the rectangular region.

Semiconductor device, wiring board for mounting semiconducto r and method of production of semiconductor device

Method and materials for printing particle-enhanced electrical contacts

ANISOTROPIC CONDUCTIVE FILM and SEMICONDUCTOR DEVICE using same

Flipchip method

이방성 도전 필름, 이방성 도전 필름의 제조 방법, 접속체의 제조 방법 및 접속 방법

... 본 발명은 이방성 도전 필름을 사용한 접속에 있어서, 접속 후의 기판 휨의 저감을 도모하는 것을 목적으로 한다. 이방성 도전 필름(23)은 제1 절연성 접착제층(30)과, 제2 절연성 접착제층(31)과, 제1 절연성 접착제층(30) 및 제2 절연성 접착제층(31)에 끼움 지지되고, 도전성 입자(32)가 절연성 접착제(33)에 함유된 도전성 입자 함유층(34)을 갖고, 도전성 입자 함유층(34)과 제1 절연성 접착제층(30) 사이에 기포(41)가 함유되고, 도전성 입자 함유층(34)은 제2 절연성 접착제층(31)과 접하는, 도전성 입자(32)의 하부의 경화도가 다른 부위의 경화도보다도 낮은 것이다.

ADHERING STRUCTURE, LIQUID CRYSTAL DEVICE, AND ELECTRONIC APPARATUS

ORGANIC MATRICES CONTAINING NANOMATERIALS TO ENHANCE BULK THERMAL CONDUCTIVITY

SEMICONDUCTOR POWER MODULE PACKAGE INCLUDING AN EXTERNAL BONDING AREA FOR WIRE BONDING WITH AN EXTERNAL CIRCUIT BOARD

PURPOSE: A semiconductor power module package including an external bonding area is provided to minimize a package size by arranging an additional bonding area for wire bonding with an external circuit board to be exposed to the outside of a sealing member. CONSTITUTION: A sealing member(160) hermetically seals semiconductor chips. A plurality of leads(150) is electrically connected to semiconductor chips and is exposed from the sealing member. External bonding members are electrically connected to the semiconductor chips and are electrically connected to the external circuit board exposed from the sealing member. A packaging board(110) comprises conductive layer patterns which are electrically separated. COPYRIGHT KIPO 2010 ...

ADHESIVE COMPOSITION, CIRCUIT CONNECTING MATERIAL AND CONNECTING STRUCTURE OF CIRCUIT MEMBER

Provided is an adhesive composition which contains an adhesive ingredient, conductive particles and insulating particles. The ratio (Ri/Rc) of the average particle diameter (Ri) of the insulating particle to the average particle diameter (Rc) of the conductive particle is 120-300%. © KIPO & WIPO 2008 ...

이방성 도전 필름, 이방성 도전 필름의 제조 방법, 접속체의 제조 방법 및 접속 방법

... 본 발명은 이방성 도전 필름을 사용한 접속에 있어서, 접속 후의 기판 휨의 저감을 도모하는 것을 목적으로 한다. 이방성 도전 필름(23)은 제1 절연성 접착제층(30)과, 제2 절연성 접착제층(31)과, 제1 절연성 접착제층(30) 및 제2 절연성 접착제층(31)에 끼움 지지되고, 도전성 입자(32)가 절연성 접착제(33)에 함유된 도전성 입자 함유층(34)을 갖고, 도전성 입자 함유층(34)과 제1 절연성 접착제층(30) 사이에 기포(41)가 함유되고, 도전성 입자 함유층(34)은 제2 절연성 접착제층(31)과 접하는, 도전성 입자(32)의 하부의 경화도가 다른 부위의 경화도보다도 낮은 것이다.

AREA MOUNTING SEMICONDUCTOR DEVICE, AND DIE BONDING RESIN COMPOSITION AND SEALING RESIN COMPOSITION FOR USE THEREIN

An area mounting semiconductor device exhibiting high reliability even when lead-free solder is used in surface mounting, and a die bonding resin composition and sealing resin composition for use therein. The area mounting semiconductor device has a semiconductor element or a multilayer element mounted on one surface of a substrate through a die bonding resin composition, with only the surface of the substrate mounting the semiconductor element being substantially sealed with a sealing resin composition. The area mounting semiconductor device is characterized in that the modulus of elasticity of hardened die bonding resin composition is 1-120 MPA at 260°C, the modulus of elasticity of hardened sealing resin composition is 400-1200 MPA at 260°C, and the coefficient of thermal expansion is 20-50 ppm at 260°C. © KIPO & WIPO 2008 ...

이방 도전성 필름 및 접속 구조체

... 이방 도전성 필름 (1A, 1B) 이, 절연 접착제층 (10) 과 그 절연 접착제층 (10) 에 격자상으로 배치된 도전 입자 (P) 를 포함한다. 임의의 도전 입자 (P0) 와 그 도전 입자 (P0) 에 인접하는 도전 입자의 중심간 거리에 대해, 도전 입자 (P0) 와 가장 짧은 거리를 제 1 중심간 거리 (d1) 로 하고, 그 다음으로 짧은 거리를 제 2 중심간 거리 (d2) 로 한 경우에, 이들 중심간 거리 (d1, d2) 가, 각각 도전 입자의 입자경의 1.5 ∼ 5 배이고, 임의의 도전 입자 (P0) 와, 그 도전 입자 (P0) 와 제 1 중심간 거리에 있는 도전 입자 (P1) 와, 그 도전 입자 (P0) 와 제 1 중심간 거리 (d1) 또는 제 2 중심간 거리 (d2) 에 있는 도전 입자 (P2) 로 형성되는 예각 삼각형에 대해서, 도전 입자 (P0, P1) 를 통과하는 제 1 배열 방향 (L1) 에 대하여 직교하는 직선 (L0) 과, 도전 입자 (P1, P2) 를 통과하는 제 2 배열 방향 (L2) 이 이루는 예각의 각도 (α) 가 18 ∼ 35°이다. 이 이방 도전성 필름 (1A, 1B) 은, COG 접속에 있어서도 안정된 접속 신뢰성을 갖는다.

접착제 및 발광 장치

... 본 발명의 접착제는 에폭시 화합물과, 양이온 촉매와, 아크릴산과 히드록실기를 갖는 아크릴산에스테르를 포함하는 아크릴 수지를 함유한다. 아크릴 수지 중의 아크릴산이 에폭시 화합물과 반응하여, 아크릴 수지의 섬과 에폭시 화합물의 바다와의 연결을 발생시킴과 함께, 산화막의 표면을 거칠게 하여 에폭시 화합물의 바다와의 앵커 효과를 강하게 한다. 또한, 아크릴 수지 중의 히드록실기를 갖는 아크릴산에스테르가, 히드록실기의 극성에 의하여 배선에 대하여 정전기적인 접착력을 얻는다. 이와 같이 산화막에 대하여 아크릴 수지의 섬 및 에폭시 화합물의 바다로 구성된 경화물 전체에서 접착됨으로써, 우수한 접착력을 얻는다.

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE HAVING THE SAME

It is an object of the present invention to provide a wireless chip of which mechanical strength can be increased. Moreover, it is an object of the present invention to provide a wireless chip which can prevent an electric wave from being blocked. The invention is a wireless chip in which a layer having a thin film transistor is fixed to an antenna by an anisotropic conductive adhesive or a conductive layer, and the thin film transistor is connected to the antenna. The antenna has a dielectric layer, a first conductive layer, and a second conductive layer. The dielectric layer is sandwiched between the first conductive layer and the second conductive layer. The first conductive layer serves as a radiating electrode and the second conductive layer serves as a ground contact body. © KIPO & WIPO 2008 ...

얼라인먼트 방법, 전자 부품의 접속 방법, 접속체의 제조 방법, 접속체, 이방성 도전 필름

... 얼라인먼트 마크를 이방성 도전 필름이 첩착되는 영역과 중첩되는 위치에 형성함과 함께, 카메라에 의한 촬상 화상을 사용한 얼라인먼트를 정밀도 양호하게 행한다. 투명 기판(12)의 표면에, 도전성 접착제(1)를 개재하여 전자 부품(18)을 탑재하고, 투명 기판(12)의 이면측으로부터 기판측 얼라인먼트 마크(21) 및 부품측 얼라인먼트 마크(22)를 촬상하고, 촬상 화상으로부터 양 얼라인먼트 마크(21, 22)의 위치를 조정하고, 투명 기판(12)에 대한 전자 부품(18)의 탑재 위치를 맞추는 얼라인먼트 방법에 있어서, 도전성 접착제(1)는, 평면으로 볼 때에 도전성 입자(4)가 규칙적으로 배열되고, 촬상 화상에 있어서, 양 얼라인먼트 마크(21, 22)의 외측가장자리의 가상 선분을 따라, 도전성 입자(4) 사이로부터 면하는 양 얼라인먼트 마크(21, 22)의 외측가장자리가 선분(S)으로서 단속적으로 나타나 있다.

Anisotropic conductive film

To provide an anisotropic conductive film capable of corresponding to a bump of a narrow pitch and reducing number density of conductive particles more than that of a conventional anisotropic conductive film. Disclosed is an anisotropic conductive film 1A in which a conductive particle 2 is arranged in an insulating resin binder 3. A polygon repeating unit 5 formed by sequentially connect the centers of a plurality of conductive particle 2 is repeatedly arranged in vertical and horizontal directions in a plan view. A polygon side of the repeating unit 5 obliquely crosses the longitudinal direction or the transverse direction of the anisotropic conductive film.

Adhesive film, and connection structure and connecting method for circuit member

Disclosed is an adhesive film wherein a conductive adhesive layer containing a conductive particle and an insulating adhesive layer are laminated. When this adhesive film is heated and pressed in the lamination direction under certain conditions, the value C/D obtained by dividing the area C of the major surface of the cured insulating adhesive layer by the area D of the major surface of the cured conductive adhesive layer is 1.2-3.0.

Semiconductor device and manufacturing method of the semiconductor device

CIRCUIT CONNECTING MATERIAL, CONNECTION STRUCTURE AND METHOD FOR PRODUCING THE SAME

Disclosed is a circuit connecting material for connecting a first circuit member having a first circuit electrode formed on a major surface of a first substrate with a second circuit member having a second circuit electrode formed on a major surface of a second substrate in such a manner that the first circuit electrode and the second circuit electrode are arranged facing each other. This circuit connecting material contains a curing agent generating free radicals, a radically polymerizable substance, and a compound having a secondary thiol group. This circuit connecting material can be cured in a short time at a low temperature, while being excellent in storage stability.

ADHESION METHOD USING GRAY-SCALE PHOTOLITHOGRAPHY

A method for adhering substrates using gray-scale photolithography includes: (a) applying a photopatternable composition to a surface of a substrate to form a film; (b) exposing a portion of the film to radiation having a wavelength of from 150 to 800 nm through a gray-scale photomask to produce an exposed film having non-exposed regions covering at least a portion of the surface; (c) heating the exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the non–exposed regions are soluble in the developing solvent; (d) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (e) heating the patterned film for an amount of time sufficient to form a cured patterned film having a surface; (f) activating the surface of the cured patterned film and a surface of an adherend; (g) contacting the activated. surface of the cured patterned film with the activated surface of the adherend.

ADHESIVE FOR CONNECTION OF CIRCUIT MEMBER AND SEMICONDUCTOR DEVICE USING THE SAME

Disclosed is an adhesive for connection of circuit members, which is interposed between a semiconductor chip having a projected connection terminal and a substrate provided with a wiring pattern, and pressed and heated therebetween for electrically connecting the connection terminal and the wiring pattern facing each other and bonding the semiconductor chip with the substrate. This adhesive for connection of circuit members contains a resin composition containing a thermoplastic resin, a crosslinkable resin and a curing agent for having the crosslinkable resin form a crosslinking structure, and complex oxide particles dispersed in the resin composition.

B-STAGEABLE DIE ATTACH ADHESIVES

The present invention relates to b-stageable die attach adhesives, methods of preparing such adhesives, methods of applying such adhesives to the die and other substrate surfaces, and assemblies prepared therewith for connecting microelectronic circuitry. The adhesive comprises a) a solid component heat-curable at a first temperature, b) a liquid component, which is either heat-curable at a second temperature or curable upon exposure to radiation in the electromagnetic spectrum, and c) a heat cure catalyst for the solid curable component.

CONDUCTIVE ADHESIVE COMPOSITIONS WITH ELECTICAL STABILITY AND GOOD IMPACT RESISTANCE FOR USE IN ELECTRONICS DEVICES

A composition that comprises a) an admixing of at least one epoxy resin and aliphatic amine wherein the ratio of epoxy function group/amine is greater than 1; b) a conductive filler; c) one or more corrosion inhibitors, oxygen scavengers or both; d) imidazole as a curing agent/catalyst; and e) optionally other additives such as organic solvents, flow additives, adhesion promoters and rheology modifiers. The reaction of epoxy and aliphatic amine with excess epoxy functionality results in a flexible resin with remaining active epoxy groups. The compositions exhibit improved electrical stability and impact resistance over other conductive adhesive compositions that do not comprise the admixture.

ADHESIVE FOR CIRCUIT CONNECTION, CIRCUIT CONNECTION METHOD USING THE SAME, AND CIRCUIT CONNECTION STRUCTURE

An adhesive for circuit connection for electrically connecting opposed circuit electrodes in the press direction by pressing substrates having the opposed circuit electrodes, with the adhesive interposed between the opposed circuit electrodes. The adhesive is characterized in that it contains a compound having an acid equivalent of 5-500 (KOH mg/g) and used for electrically connecting opposed circuit electrodes by interposing the adhesive between substrates having the circuit electrodes and pressing the substrates, the adhesive has first and second adhesive layers, and the glass transition temperature (Tg) of the first adhesive layer is higher than the Tg of the second adhesive layer after the press connection.

Semiconductor device

A semiconductor device includes a first chip coupled to an electrical insulator, and a sintered heat conducting layer disposed between the electrical insulator and the first chip.

Connection body

Even in case of conductive particles being clamped between stepped sections of substrate electrodes and electrode terminals, conductive particles sandwiched between each main surface of the substrate electrodes and electrode terminals are sufficiently compressed, ensuring electrical conduction. An electronic component is connected to a circuit substrate via an anisotropic conductive adhesive agent, on respective edge-side areas of substrate electrodes of the circuit substrate and electrode terminals of the electronic component, stepped sections are formed and abutted, conductive particles are sandwiched between each main surface and stepped sections of the substrate electrodes and electrode terminals; the conductive particles and stepped sections satisfy formula, a+b+c≦0.8 D (1), wherein a is height of the stepped section of the electrode terminals, b is height of the stepped section of the substrate electrodes, c is gap distance between each stepped sections and D is diameter of conductive ...

Adhesion method using gray-scale photolithography

A method for adhering substrates using gray-scale photolithography includes: (a) applying a photopatternable corn-position to a surface of a substrate to form a film; (b) exposing a portion of the film to radiation having a wavelength of from 150 to 800 nm through a gray-scale photomask to produce an exposed film having non-exposed regions covering at least a portion of the surface; (c) heating the exposed film for an amount of time such that the exposed regions are substantially insoluble in a developing solvent and the nonexposed regions are soluble in the developing solvent; (d) removing the non-exposed regions of the heated film with the developing solvent to form a patterned film; (e) heating the patterned film for an amount of time sufficient to form a cured patterned film having a surface; (f) activating the surface of the cured patterned film and a surface of an adherend; (g) contacting the activated surface of the cured patterned film with the activated surface of the adherend.

Flexible epoxy adhesives with low bleeding tendency

For use in microelectronics applications, an improvement to an epoxy resin composition to reduce bleeding of the composition when it is applied to a silicon or metal substrate consists in the addition to the composition of a polyhydroxyl compound having two or three hydroxyl groups, or of a monohydroxyl compound that also contains one or more phenyl groups. The hydroxyl compound is present in the composition in a ratio by weight to the flexibilizing compound of from 1:3 to 1:10.

Interconnections with electrically conductive adhesives: structures, materials, method and their applications

A new interconnection scheme is disclosed for a tape automated bonding (TAB) package, a flip chip package and an active matrix liquid crystal display (AMLCD) panel, where an electrically conducting adhesive is used to form an electrical interconnection between an active electronic device and its components. The electrically conducting adhesive can be a mixture comprising a polymer resin, a no-clean solder flux, a plurality of electrically conducting particles with an electrically conducting fusible coating which provides a metallurgical bond between the conducting particles as well as to the substrates. The advantages of using the electrically conducting adhesives include reduction in bonding pressure and/or bonding temperature, control of interfacial reactions, promotion of stable metallurgical bonds, enhanced reliability of the joints, and others.

Semiconductor device, manufacturing method of semiconductor device, and RFID tag

The present invention provides a semiconductor device which is formed at low cost and has a great versatility, a manufacturing method thereof, and further a semiconductor device with an improved yield, and a manufacturing method thereof. A structure, which has a base including a plurality of depressions having different shapes or sizes, and a plurality of IC chips which are disposed in the depressions and which fit the depressions, is formed. A semiconductor device which selectively includes a function in accordance with an application, by using the base including the plurality of depressions and the IC chips which fit the depressions, can be manufactured at low cost.

Thermal interface material and method of using the same and electronic assembly having the same

An electronic assembly includes a heat source having a maximum operating temperature, a heat dissipating device, a thermal interface material sandwiched between the heat source and the heat dissipating device. The thermal interface material includes a base and a plurality of first thermally conductive particles dispersed in the base. The first thermally conductive particles have a size monotonically changing from a first size less than 100 nanometers and a first melting temperature below the maximum operating temperature, to a second size larger than 100 nanometers and a second melting temperature above the maximum operating temperature when the heat source operates at a temperature above the first melting temperature and at or below the maximum operating temperature.

Conductive Composition and Conductive Molded Article

The present invention relates to a conductive composition containing a conductive metal powder and a resin component, in which the conductive metal powder contains at least a metal flake having a crystalline structure in which a metal crystal grows in a flake shape, and the resin component contains an aromatic amine skeleton.

Adhesive applications using alkali silicate glass for electronics

An assembly includes an integrated circuit die coupled to another component of the assembly with an alkali silicate glass material. The alkali silicate material may include particles for modifying the thermal, mechanical, and/or electrical characteristics of the material.

ANISOTROPIC CONDUCTIVE FILM AND PRODUCTION METHOD OF THE SAME

An anisotropic conductive film that can be produced in high productivity and can reduce a short circuit occurrence ratio has a first conductive particle layer in which conductive particles are dispersed at a predetermined depth in a film thickness direction, and a second conductive particle layer in which conductive particles are dispersed at a depth different from that in the first conductive particle layer. In the respective conductive particle layers, the closest distances between the adjacent conductive particles are 2 times or more the average particle diameters of the conductive particles.

Electronic devices with semiconductor die attached with sintered metallic layers, and methods of formation of such devices

An electronic device includes a semiconductor die having a lower surface, a sintered metallic layer underlying the lower surface of the semiconductor die, a conductive layer underlying the sintered metallic layer, and a conductive substrate underlying the conductive layer.

Low stress conductive adhesive

A low stress conductive film or paste adhesive that comprises a) one or more functional acrylic copolymers or terpolymers; b) epoxy; and c) conductive filler. Additional ingredients, such as adhesion promoters and conductivity enhancers may also be utilized. The conductive film or paste adhesive provides higher adhesion strength than traditional flexible conductive film adhesives and a lower stress between the bonded components than existing high adhesion strength conductive films.

METHOD FOR LINKING A CHIP AND A SUBSTRATE

KLEBSTOFF FÜR HALBLEITERBAUTEILE

Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik

Klebstoff zur Befestigung von Chips zur Anwendung bei der Mikroelekronischen Anordnung

LEISTUNGSHALBLEITEREINHEIT UND HERSTELLUNGSVERFAHREN FÜR EINE LEISTUNGSHALBLEITEREINHEIT

Eine Leistungshalbleitereinheit weist ein Substrat sowie ein Halbleiterelement auf, das unter Verwendung eines gesinterten Metall-Bonding-Materials auf eine erste Oberfläche des Substrats gebondet ist. Das Substrat weist eine Mehrzahl von Vertiefungen auf, die in der ersten Oberfläche ausgebildet sind und sich außerhalb einer Stelle unmittelbar unterhalb einer Wärmeerzeugungseinheit des Halbleiterelements befinden. Das gesinterte Metall-Bonding-Material wird nach der Bildung der Vertiefungen auf das Substrat zugeführt, und das Halbleiterelement wird durch Beaufschlagung mit Wärme und einem Druck an das Substrat gebondet.

SEMICONDUCTOR MODULE, METHOD FOR MANUFACTURING THE SAME AND ELECTRIC POWER CONVERSION DEVICE

Ein Halbleitermodul umfasst: eine Halbleitervorrichtung mit einer oberen Oberflächenelektrode; eine Leiterplatte, die über ein Bondingelement mit der oberen Oberflächenelektrode verbunden ist; und einen an die Leiterplatte gebondeten Draht, wobei der Draht ein Metallfaden oder eine Band-Bondverbindung ist und das Bondingelement ein mit Harz imprägniertes poröses gesintertes Metallmaterial ist.

Cationic polymerizable adhesive composition and anisotropically electroconductive adhesive composition

A cationic polymerizable adhesive composition comprising a cationic polymerizable monomer selected from an epoxy monomer, a vinyl ether monomer and a mixture thereof, a cationic polymerization catalyst and a stabilizer, wherein the stabilizer is at least one acid amide represented by the following Formula (I) wherein R<1> is an alkyl group having from 1 to 30 carbon atoms or an alkenyl group containing one or two unsaturated bond(s) and having from 2 to 30 carbon atoms, and each R<2> is independently hydrogen or an alkyl group having from 1 to 10 carbon atoms.

B-STAGEABLE DIE ATTACH ADHESIVES

CO-CURABLE COMPOSITIONS

GOLD CONDUCTOR COMPOSITIONS

Multifunctional die attachment film and semiconductor packaging method using the same

A multifunctional die attachment film used in a semiconductor packaging process includes a first die attachment film attached to a surface of a wafer having fine circuit patterns and solder bump patterns and having a first adhesive strength; and a second die attachment film attached on the first die attachment film and having a second adhesive strength with a wafer, a die chip, PCB and a flexibleboard, and the multifunctional die attachment film serves as a backgrinding tape in a backgrinding process, and after the backgrinding process is completed, the multifunctional die attachment film isnot removed, but is used to attach a die chip to a connection member. And, the present invention utilizes the die attachment film as a backgrinding tape in the backgrinding process and concurrently awafer protection means in a wafer dicing process, thereby preventing sawing burr, scratches or cracks.

Circuit connection structure, method for manufacturing same, and semiconductor substrate for circuit connection structure

Semiconductor apparatus, method for manufacturing the same and electric device

METHOD FOR SIMULTANEOUS REALIZATION OF MULTIPLE ELECTRIC CONNECTIONS, IN PARTICULAR FOR the ELECTRIC CONNECTION Of a CHIP OF SEMICONDUCTORS

TAPE FOR CONNECTING CIRCUITS, REEL OF ADHESIVE, USE OF LAMINATED TAPE AS CIRCUIT CONNECTING MATERIAL, USE OF LAMINATED TAPE FOR MANUFACTURE OF CIRCUIT CONNECTING MATERIAL, AND METHOD FOR MANUFACTURING CIRCUIT-CONNECTED BODY

대형 다이 반도체 패키지를 위한 전도성 다이 부착 필름 및 그의 제조를 위해 유용한 조성물

... 본원에는 다양한 적용분야에서 사용하기 위해, 예를 들어 대형 다이 반도체 패키지의 제조를 위해 유리한 특성을 갖는 전도성 다이 부착 필름이 제공된다. 또한, 이러한 필름의 제조를 위해 유용한 제형물뿐만 아니라 이러한 제형물의 제조 방법이 제공된다. 본 발명의 추가의 측면에서, 본 발명에 따른 조성물로부터 제조된 전도성 네트워크가 제공된다. 추가의 측면에서, 본 발명은 추가로 그에 적합한 기판에 접착된 이러한 전도성 다이 부착 필름을 포함하는 물품에 관한 것이다.

SINTERING MATERIALS AND ATTACHMENT METHODS USING SAME

Metal sintering film compositions

A sintering film comprising one or more metals, one or more metal alloys, or blends of one or more metals and one or more metal alloys, is prepared optionally using a solid or semi-solid organic binder. The organic binder can have fluxing functionality; the organic binder can be one that will partially or completely decompose upon sintering of the metal or metal alloy in the composition. In one embodiment, the sintering film is provided on an end use substrate, such as a silicon die or wafer, or a metal circuit board or foil, or the sintering film is provided on a carrier, such as a metal mesh. Preparation is accomplished by dispersing the metal or metal alloy in a suitable solvent, with or without a binder, and exposing the composition to high temperature to evaporate off the solvent and partially sinter the metal or metal alloy.

Sintered material, connection structure, composite particle, joining composition, and method for manufacturing sintered material

Provided are a sintered material excellent both in thermal stress and joining strength, a connection structure provided with the sintered material, a joining composition whereby the sintered material can be manufactured, and a method for manufacturing the sintered material. A base part 1, a buffer part 2, and a filling part 3 are provided in the sintered material. The buffer part 2 and the filling part 3 are dispersed in the base part 1. The base part 1 is a metal sintered compact, the buffer part 2 is formed by a vacancy and/or a material not the same as the sintered compact, and the filling part 3 is formed by particles and/or fibers. The expression A > B is satisfied, where A is the kurtosis of the volume distribution of the buffer part in a three-dimensional image of the sintered material and B is the kurtosis of the volume distribution of the buffer part in a three-dimensional image of the sintered material with the filling part removed therefrom.

Sheet and composite sheet

The present invention addresses the problem of providing a sheet having a lesser amount of organic substances remaining in a sintered body following a sintering process. The solution to the present invention relates to a sheet comprising a pre-sintering layer. The pre-sintering layer contains polycarbonate.

Compositions for use in electronics devices

A fast curing composition that comprises a polymeric resin, a conductive film and one or more near-infrared absorbing additives and optionally an oxygen scavenger or corrosion inhibitor or both, and other additives such as reactive or nonreactive diluents, inert fillers, and adhesion promoters. The composition may be conductive, resistive or anisotropically conductive. In another embodiment, this invention is a method for improving the cure speed of a composition by exposing the composition to a near infrared energy source.

Adhesive composition, circuit connecting material and connecting structure of a circuit member

This invention provides an adhesive composition that comprises an adhesive constituents conductive particles and insulating particles. The ratio (Ri/Rc) of the average particle diameter (Ri) of the insulating particles to the average particle diameter (Rc) of the conductive particles is 120-300%.

Quinolinols and quinolinol derivatives as adhesion promoters in die attach adhesives

Die attach adhesive compositions comprise a quinolinol or a quinolinol derivative as an adhesion promoter. An exemplary quinolinol derivative has the structure.

Method for manufacturing connecting body, and method for connecting electronic component

The present invention has: a step for arranging an electronic component (18) on a substrate (12) with a light-curing adhesive (3) interposed therebetween; and a step for beaming light onto the adhesive (3) and curing the adhesive (3). The region at which the substrate (12) and the electronic component (18) are connected is divided into a plurality of connection regions (CH1 through CH5). The light-curing adhesive (3) is cured in a manner in which the light-beaming start timing is staggered between each of the connection regions (CH1 through CH5). The cure shrinkage in the light-curing adhesive is minimized, and faulty connection of the electronic component is mitigated.

Anisotropic conductive film composition, anisotropic conductive film, and semiconductor device

Anisotropic conductive film composition including ethylene-vinyl acetate copolymer, polyurethane resin and organic fine particles, and a film including the composition are disclosed. More particularly, the present invention provides anisotropic conductive film composition and a film including the composition, wherein the anisotropic conductive film composition includes ethylene-vinyl acetate copolymer, polyurethane resin and organic fine particles together to have good flowability, thereby providing smooth filling of the film composition, suppressing thermal deformation by contraction and expansion to have fewer bubbles generated, and exhibiting excellent adhesion.

ANISOTROPIC CONDUCTIVE FILM AND MANUFACTURING METHOD THEREFOR

This anisotropic conductive film has a three-layered structure in which a first connection layer is sandwiched between second and third connection layers consisting primarily of an insulating resin. The first connection layer has a structure in which conductive grains are arranged so as to form a single layer in the direction of the plane of the second-connection-layer side of an insulating resin layer, and said insulating resin layer is thinner in central regions between adjacent conductive grains than near the conductive grains.

AREA MOUNTING SEMICONDUCTOR DEVICE, AND DIE BONDING RESIN COMPOSITION AND SEALING RESIN COMPOSITION FOR USE THEREIN

An area mounting semiconductor device exhibiting high reliability even when lead-free solder is used in surface mounting, and a die bonding resin composition and sealing resin composition for use therein. The area mounting semiconductor device has a semiconductor element or a multilayer element mounted on one surface of a substrate through a die bonding resin composition, with only the surface of the substrate mounting the semiconductor element being substantially sealed with a sealing resin composition. The area mounting semiconductor device is characterized in that the modulus of elasticity of hardened die bonding resin composition is 1-120 MPA at 260°C, the modulus of elasticity of hardened sealing resin composition is 400-1200 MPA at 260°C, and the coefficient of thermal expansion is 20-50 ppm at 260°C.

SINTERED MATERIAL, SINTERED BOND AND PROCESS FOR PRODUCING A SINTERED BOND

The invention relates to a sintered material comprising metallic structure particles provided with an organic coating. It is envisaged in accordance with the invention that metallic and/or ceramic auxiliary particles (7) with a non-organic coating, which do not outgas in the course of the sintering process, are provided. The invention further relates to a sintered bond (1) and to a process for producing a sintered bond (1).

REWORKABLE POLY(ETHYLENE-VINYL ALCOHOL) ADHESIVE FOR ELECTRONIC APPLICATIONS

The present invention provides a reworkable, semi-crystalline thermoplastic adhesive composition, suitable for bonding electronic components. The adhesive composition, preferably provided as an adhesive film, includes one or more poly(ethylene-vinyl alcohol) copolymers.

Semiconductor device connected by anisotropic conductive film

A semiconductor device connected by an anisotropic conductive film, the film having a storage modulus of 100 MPa to 300 MPa at 40° C. after curing of the film, and a peak point of 80° C. to 90° C. in a DSC (Differential Scanning calorimeter) profile of the film.

Adhesive composition comprising (meth)acrylate polymer and epoxy resin

An adhesive tape comprising an energy beam transmittable base sheet having a surface tension of not more than 40 dyne/cm and an adhesive layer formed on one surface of the base sheet, the adhesive layer comprising a (meth)acrylate polymer, an epoxy resin, a photopolymerizable low molecular weight compound, a heat activatable latent curing agent for the epoxy resin and a photopolymerization initiator for the photopolymerizable low molecular weight compound. The adhesive in the adhesive layer is curable with an energy beam and the so cured adhesive develops tackiness again when heated. When the tape is used in processing a semiconductor wafer, it serves as a dicing tape for holding the wafer in position during the dicing step. Each piece of the diced and cured adhesive layer, that is attached to each chip and capable of being tackified by heating, provides an adhesive required for securely mounting the chip on the lead frame in the die-bonding step.

Curing a heat-curable material in an embedded curing zone

The present disclosure relates to a method for curing a heat-curable material (1) in an embedded curing zone (2) and an assembly resulting from such method. The method comprises providing a heat-conducting strip (3) partially arranged between a component (9) and a substrate (10) that form the embedded curing zone (2) therein between. The heat-conducting strip (3) extends from the embedded curing zone (2) to a radiation-accessible zone (7) that is distanced from the embedded curing zone (2) and at least partially free of the component (9) and the substrate (10). The method further comprises irradiating the heat-conducting strip (3) in the radiation-accessible zone (7) by means of electromagnetic radiation (6). Heat (4a) generated by absorption of the electromagnetic radiation (6) in the heat-conducting strip (3) is conducted from the radiation-accessible zone (7) along a length of the heat-conducting strip (3) to the embedded curing zone (2) to cure the heat-curable material (1) by conducted ...

Display substrate, production method thereof, and display apparatus

This disclosure provides a display substrate, a production method thereof, and a display apparatus. The display substrate comprises: a display area; and a pad area outside the display area. The pad area comprises at least one pad. The pad comprises: a metal layer, which comprises a first metal sublayer and a second metal sublayer laminated on the first metal sublayer, wherein a corrosion resistance of the second metal sublayer is stronger than that of the first metal sublayer; and a conductive material layer, which covers a side surface of the metal layer.

3D-JOINING OF MICROELECTRONIC COMPONENTS WITH CONDUCTIVELY SELF-ADJUSTING ANISOTROPIC MATRIX

... 3D joining of microelectronic components and a conductively self-adjusting anisotropic matrix are provided. In an implementation, an adhesive matrix automatically makes electrical connections between two surfaces that have electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

Manufacturing method of mounting part of semiconductor light emitting element, manufacturing method of light emitting device, and semiconductor light emitting element

A manufacturing method of a mounting part of a semiconductor light emitting element comprising: preparing a semiconductor light emitting element including an electrode which has a surface, and a board which has a surface; forming a plurality of bump material bodies on at least one of the surface of the electrode and the surface of the board by shaping bump material into islands, wherein the bump material is paste in which metal particles are dispersed, a top surface and a bottom surface of the bump material bodies have different areas, and the top surface is practically flat; solidifying the bump material bodies by thermally processing the bump material bodies; and fixing the semiconductor light emitting element and the board through the bumps.

Semiconductor device for preventing exfoliation from occurring between a semiconductor chip and a resin substrate

A PBGA-type semiconductor device is comprised such that a semiconductor chip is fixedly attached to the front surface of a resin substrate thereof with the use of an adhesive composed mainly of a resin material. As both the resin substrate and the adhesive are composed mainly of resin materials, adhesion therebetween is excellent, and risk of exfoliation of the semiconductor chip from the resin substrate is eliminated owing to strong bonding therebetween. Furthermore, power-source related connection electrodes are formed so as to be extended to a region where the semiconductor chip is fixedly attached onto the front surface of the resin substrate while an electrically conductive adhesive is used as the adhesive. As a result, the body of the semiconductor chip and the power-source related connection electrodes are rendered to be equal in potential while heat generated in the semiconductor chip can be radiated via the electrically conductive adhesive and the power-source related connection ...

Semiconductor packages and methods of fabrication thereof

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad.

3D-joining of microelectronic components with conductively self-adjusting anisotropic matrix

... 3D joining of microelectronic components and a conductively self-adjusting anisotropic matrix are provided. In an implementation, an adhesive matrix automatically makes electrical connections between two surfaces that have electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

Conductive materials with electrical stability and good impact resistance for use in electronics devices

A composition that comprises a) an admixing of at least one epoxy resin and aliphatic amine wherein the ratio of epoxy function group/amine is greater than 1; b) a conductive filler; c) one or more corrosion inhibitors, oxygen scavengers or both; d) imidazole as a curing agent/catalyst; and e) optionally other additives such as organic solvents, flow additives, adhesion promoters and rheology modifiers. The reaction of epoxy and aliphatic amine with excess epoxy functionality results in a flexible resin with remaining active epoxy groups. The compositions exhibit improved electrical stability and impact resistance over other conductive adhesive compositions that do not comprise the admixture.

TRANSIENT LIQUID PHASE MATERIAL BONDING AND SEALING STRUCTURES AND METHODS OF FORMING SAME

A method of forming a bonding element including a first transient liquid phase (TLP) bonding element including a first material and a second material, the first material having a higher melting point than the second material, a ratio of a quantity of the first material and the second material in the first TLP bonding element having a first value, and a second TLP bonding element including the first material and the second material, a ratio of a quantity of the first material and the second material in the second TLP bonding element having a second value different from the first value.

PRINTED CIRCUIT BOARD FOR HARSH ENVIRONMENTS

Halbleitermodule und Verfahren zu deren Bildung

Gemäß einer Ausführungsform der vorliegenden Erfindung umfasst ein Halbleitermodul ein erstes Halbleitergehäuse, das einen ersten Halbleiterchip (50) aufweist, der in einem ersten Einkapselungsmittel (80) angeordnet ist. Eine Öffnung (100) ist im ersten Einkapselungsmittel (80) angeordnet. Ein zweites Halbleitergehäuse (150), das einen zweiten Halbleiterchip umfasst, ist in einem zweiten Einkapselungsmittel (180) angeordnet. Das zweite Halbleitergehäuse (150) ist wenigstens teilweise innerhalb der Öffnung (100) im ersten Einkapselungsmittel (80) angeordnet.

Elektronisches Bauelement und Verfahren zum Fertigen eines elektronischen Bauelements

Ein elektronisches Bauelement enthält einen Halbleiterchip, der eine Elektrode, ein Substratelement und ein Kontaktelement enthält, das die Elektrode mit dem Substratelement verbindet. Das elektronische Bauelement enthält weiter eine Einkapselungsmasse, die ausgestaltet ist, um das Kontaktelement mindestens teilweise freigelegt zu lassen, sodass sich eine Wärmesenke mit dem Kontaktelement verbinden lässt.

Elektronische Vorrichtung und Verfahren zum Herstellen einer Elektronischen Vorrichtung

Ein Verfahren zum Herstellen einer elektronischen Vorrichtung umfasst ein gleichzeitiges Befestigen eines ersten und eines zweiten Halbleiterchips mithilfe eines Übertragungselements auf einem Träger, wobei das Befestigen des ersten Halbleiterchips ein erstes Befestigungsverfahren umfasst und wobei das Befestigen des zweiten Halbleiterchips ein zweites Befestigungsverfahren umfasst, das verschieden ist von dem ersten Befestigungsverfahren.

Temperatursensorverbund

Temperatursensorverbund (1),umfassend mindestens einen Temperatursensor (2) und mindestens eine Zuleitung (3), wobei der Temperatursensor (2) mindestens ein elektrisch isolierendes Substrat (4) mit einer Oberseite (5) und einer Unterseite (6) aufweist, wobei auf der Oberseite (5) zumindest abschnittsweise eine Temperatursensorstruktur (7) mit mindestens einer Sensorkontaktfläche (8) ausgebildet ist, wobeidie Zuleitung (3) mindestens eine Zuleitungskontaktfläche (9) aufweist,wobei die Zuleitungskontaktfläche (9) mit der Sensorkontaktfläche (8) zumindest abschnittsweise mittels einer ersten Sinterschicht (10) verbunden ist.

BONDING WITH A CONDUCTIVE ADHESIVE

B-ZUSTANDSKLEBSTOFF FOR THE CHIP GLUING

GLUING PROCEDURE WITH GREY SCALE OPTICAL LITHOGRAPHY

GOLD CONDUCTOR COMPOSITIONS

TITLE Gold Conductor Compositions Superior thick film gold conductor compositions useful in electronic microcircuits containing small amounts of silver. Improved properties prior to heat aging include surface characteristics, malleability and electrical conductivity. Improved properties of thermally aged aluminum wire bonds include adhesion, electrical continuity and electrical conductivity.

HYBRID NANOSILVER/LIQUID METAL INK COMPOSITION AND USES THEREOF

The present disclosure is directed to a hybrid conductive ink including: silver nanoparticles and eutectic low melting point alloy particles, wherein a weight ratio of the eutectic low melting point alloy particles and the silver nanoparticles ranges from 1:20 to 1:5. Also provided herein are methods of forming an interconnect including a) depositing a hybrid conductive ink on a conductive element positioned on a substrate, wherein the hybrid conductive ink comprises silver nanoparticles and eutectic low melting point alloy particles, the eutectic low melting point alloy particles and the silver nanoparticles being in a weight ratio from about 1:20 to about 1:5; b) placing an electronic component onto the hybrid conductive ink; c) heating the substrate, conductive element, hybrid conductive ink and electronic component to a temperature sufficient i) to anneal the silver nanoparticles in the hybrid conductive ink and ii) to melt the low melting point eutectic alloy particles, wherein the ...

ADHESIVE, METHOD FOR BONDING, AND ASSEMBLIES OF MOUNTED BOARDS

A two-part adhesive, characterized by being essentially composed of an acrylic monomer, a peroxide, a reducing agent, an epoxy resin precursor and a curing agent and being separated into agent (A) containing one or two components selected from among an acrylic monomer, a peroxide and a reducing agent and agent (B) containing the other components that have not been selected for agent (A). This adhesive can constantly give a highly reliable bonding which is free from heat stress and excellent in heat resistance.

Anti-tamper microchip package based on thermal nanofluids or fluids

A tamper-resistant microchip package contains fluid- or nanofluid-filled capsules, channels, or reservoirs, wherein the fluids, either alone or in combination, can destroy circuitry by etching, sintering, or thermally destructing when reverse engineering of the device is attempted. The fluids are released when the fluid-filled cavities are cut away for detailed inspection of the microchip. Nanofluids may be used for the sintering process, and also to increase the thermal conductivity of the fluid for die thermal management. Through-vias and micro vias may be incorporated into the design to increase circuitry destruction efficacy by improving fluid/chip contact. Thermal interface materials may also be utilized to facilitate chip cooling.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device includes: a support base material, and a semiconductor element bonded to the support base material with a binder, the binder including: a porous metal material that contacts the support base material and the semiconductor element, and a solder that is filled in at least one part of pores of the porous metal material.

Semiconductor apparatus, method for manufacturing the same and electric device

A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.

Bridging arrangement and method for manufacturing a bridging arrangement

A bridging arrangement for coupling a first terminal to a second terminal includes a plurality of particles of a first type forming at least one path between the first terminal and the second terminal, wherein the particles of the first type are attached to each other; a plurality of particles of a second type arranged in a vicinity of a contact region between a first particle of the first type and a second particle of the first type, wherein at least a portion of the plurality of particles of the second type is attached to the first particle of the first type and the second particle of the first type.

Anisotropic conductive film composition, anisotropic conductive film, and semiconductor device bonded by the same

An anisotropic conductive film composition for bonding an electronic device may include a hydrogenated bisphenol A epoxy monomer represented by Formula 1 or a hydrogenated bisphenol A epoxy oligomer represented by Formula 2: where n may be an integer from 1 to about 50.

Embedded Electrical Component Surface Interconnect

An electrical component package is disclosed comprising: an electrical component having an embedded surface, a structure attached to the electrical component opposite the embedded surface, a conductive adhesive directly attached to the embedded surface, where the conductive adhesive is shaped to taper away from the embedded surface, and an encapsulation material covering the conductive adhesive and the electrical component. In various embodiments, the tapered conductive adhesive facilitates the securing of the conductive adhesive to the electrical component by the encapsulation material. Also disclosed are various methods of forming an electrical component package having a single interface conductive interconnection on the embedded surface. The conductive interconnection is configured to maintain an interconnection while under stress forces. Further disclosed in a method of applied a conductive adhesive that enables design flexibility regarding the shape and depth of the conductive interconnection.

Starting material for a sintered bond and process for producing the sintered bond

The invention relates to a starter material for a sintering compound, said starter material comprising first particles of at least one metal having a first coating which is applied to the first particles and consists of an organic material, and second particles which contain an organic metal compound and/or a precious metal oxide, the organic metal compound and/or the precious metal oxide being converted during heat treatment of the starter material into the fundamental elemental metal and/or precious metal. The invention is characterized in that the second particles have a core of at least one metal and a second coating which is applied to the core and contains the organic metal compound and/or precious metal oxide. Furthermore, the first coating contains a reducing agent by means of which the organic metal compound and/or the precious metal oxide is/are reduced to the elemental metal and/or precious metal at a temperature below the sintering temperature of the elemental metal and/or precious metal.

Starting material for a sintered bond and process for producing the sintered bond

The invention relates to a starter material for a sintering compound, said starter material comprising particles which at least proportionally contain an organic metal compound and/or a precious metal oxide, the organic metal compound and/or the precious metal oxide being converted during heat treatment of the starter material into the elemental metal and/or precious metal. The invention is characterized in that the particles have a coating containing a reducing agent by means of which the organic metal compound and/or precious metal oxide is reduced to the elemental metal and/or precious metal at a temperature below the sintering temperature of the elemental metal and/or precious metal.

Power semiconductor device and method for manufacturing power semiconductor device

This power semiconductor device is provided with: a substrate; and a semiconductor element which is bonded onto the substrate using a sinterable metal bonding material. The semiconductor element comprises: a base; a first conductive layer that is provided on a first surface of the base, said first surface being on the substrate side; and a second conductive layer that is provided on a second surface of the base, said second surface being on the reverse side of the first surface. The thickness of the first conductive layer is from 0.5 times to 2.0 times (inclusive) the thickness of the second conductive layer.

ANISOTROPIC CONDUCTIVE FILM AND CONNECTED STRUCTURE

Anisotropic conductive films, each including an insulating adhesive layer and conductive particles insulating adhesive layer in a lattice-like manner. Among center distances between an arbitrary conductive particle and conductive particles adjacent to the conductive particle, the shortest distance to the conductive particle is a first center distance; the next shortest distance is a second center distance. These center distances are 1.5 to 5 times the conductive particles' diameter. The arbitrary conductive particle, conductive particle spaced apart from the conductive particle by the first center distance, conductive particle spaced apart from the conductive particle by first center distance or second center distance form an acute triangle. Regarding this acute triangle, an acute angle formed between a straight line orthogonal to a first array direction passing through the conductive particles and second array direction passing through conductive particles being 18 to 35°. These anisotropic conductive films have stable connection reliability in COG connection, 1when among center distances between an arbitrary conductive particle and conductive particles adjacent to the conductive particle, a shortest distance to the arbitrary conductive particle is defined as a first center distance, and a next shortest distance is defined as a second center distance,the first center distance and the second center distance are each 1.5 to 5 times a particle diameter of the conductive particles, and{'sub': 0', '1', '0', '2', '0', '0', '1', '1', '2, 'regarding an acute triangle formed by an arbitrary conductive particle P, a conductive particle Pspaced apart from the arbitrary conductive particle Pby the first center distance, and a conductive particle Pspaced apart from the arbitrary conductive particle Pby the first center distance or the second center distance, an acute angle a formed between a straight line orthogonal to a direction (hereinafter, referred to as a first array ...

Light emitting apparatus

A light emitting apparatus includes a positive lead terminal and a negative lead terminal, each of which includes a first main surface, a second main surface, and an end surface including a first recessed surface area extending from a first point of the first main surface in cross section, and a second recessed surface area extending from a second point of the second main surface in cross section. A distance between a first part of the end surface of the positive lead terminal and a second part of the end surface of the negative lead terminal than a first distance between the first points of the positive lead terminal and the negative lead terminal and a second distance between the second points of the positive lead terminal and the negative lead terminal. The first part and the second part are separated from the first point and the second point.

Method for Manufacturing Metal Powder

A method for manufacturing metal powder comprising: providing a basic metal salt solution; contacting the basic metal salt solution with a reducing agent to precipitate metal powder therefrom; and recovering precipitated metal powder from the solvent.

METHOD FOR PRODUCING A LIGHT EMITTING DEVICE

A method for producing a light emitting device includes a first bonding step including disposing a first bonding member a mounting substrate, placing a light emitting element on the mounting substrate such that the first bonding member is located between a mounting face of the light emitting element and the mounting substrate, and hardening the first bonding member thereby bonding the light emitting element and the mounting substrate such that, in a plan view, an entirety of the first bonding member is contained within an area of the mounting face of the light emitting element; and a second bonding step including disposing a second bonding member on the upper face of the mounting substrate such that, in a plan view, the second bonding member is located at at least a portion of an outer edge of the mounting face of the light emitting element, and hardening the second bonding member. 1. A method for producing a light emitting device , the method comprising: disposing a first bonding member in a liquid or paste form on an upper face of a mounting substrate,', 'placing a light emitting element on the mounting substrate such that the first bonding member is located between a mounting face of the light emitting element and the upper face of the mounting substrate, wherein the light emitting element includes an electrode at an upper face of the light emitting element, and', 'hardening the first bonding member thereby bonding the light emitting element to the mounting substrate such that, in a plan view, an entirety of the first bonding member is contained within an area of the mounting face of the light emitting element; and, 'a first bonding step comprising disposing a second bonding member in a liquid or paste form on the upper face of the mounting substrate such that, in a plan view, the second bonding member extends around a periphery of the first bonding member, and', 'hardening the second bonding member., 'a second bonding step comprising2. The method according to ...

MICRO LED DISPLAY AND MANUFACTURING METHOD THEREOF

A micro LED display manufacturing method according to various embodiments may include: a first operation of bonding an anisotropic conductive film including a plurality of conductive particles onto one surface of a prepared substrate, the one surface including a circuit part; a second operation of forming a bonding layer on the anisotropic conductive film; a third operation of positioning a plurality of micro LED chips above the bonding layer, the micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate; a fourth operation of attaching the plurality of micro LED chips onto the bonding layer by means of laser transfer; and a fifth operation of forming a conductive structure for electrically connecting a connection pad to the circuit part through the conductive particles by means of heating and pressurizing. 1. A method for manufacturing a light-emitting diode (LED) display , the method comprising:bonding an anisotropic conductive film including a plurality of conductive particles onto a surface of a substrate including a circuit part;forming a bonding layer on the anisotropic conductive film;positioning a plurality of micro LED chips on the bonding layer, the plurality of micro LED chips being arranged on a carrier substrate while being spaced a first distance apart from the substrate;attaching the plurality of micro LED chips onto the bonding layer using a laser; andforming a conductive structure for electrically connecting a connection pad to the circuit part through the plurality of conductive particles by heating and pressurizing.2. The method of claim 1 , wherein the plurality of conductive particles is arranged at an equal interval in the anisotropic conductive film.3. The method of claim 2 , wherein each of the plurality of conductive particles includes a diameter that is equal to or shorter than 5.5 micrometers.4. The method of claim 1 , wherein the bonding layer is applied to an entire portion of the ...

Light-emittng device

A light-emitting device includes a first light-emitting element, a second light-emitting element having a peak emission wavelength different from that of the first light-emitting element, a light-guide member covering a light extracting surface and lateral surfaces of the first light-emitting element and a light extracting surface and lateral surfaces of the second light-emitting element, and a wavelength conversion layer continuously covering the light extracting surface of each of the first and second light-emitting elements and disposed apart from each of the first and second light-emitting elements, and a first reflective member covering outer lateral surfaces of the light-guide member. An angle defined by an active layer of the first light-emitting element and an active layer of the second light-emitting element is less than 180° at a wavelength conversion layer side.

Joint Manufacturing Method

Provided is a joint manufacturing method including: a step A of preparing a laminate in which two objects to be joined are temporarily adhered with a heat-joining sheet including a pre-sintering layer interposed between the two objects to be joined; a step B of increasing a temperature of the laminate from a temperature equal to or lower than a first temperature defined below to a second temperature; and a step C of holding the temperature of the laminate in a predetermined range after the step B, in which the laminate is pressurized during at least a part of the step B and at least a part of the step C. The first temperature is a temperature at which an organic component contained in the pre-sintering layer is decreased by 10% by weight when the pre-sintering layer is subjected to thermogravimetric measurement.

Semiconductor device and manufacturing method thereof

A semiconductor device according to an embodiment includes a lead frame, a semiconductor chip provided above the lead frame, and a bonding material including a sintered material containing a predetermined metal material and a predetermined resin, where the bonding material includes a first portion provided between the lead frame and the semiconductor chip, and a second portion provided on the lead frame around the semiconductor chip, where the bonding material bonds the lead frame and the semiconductor chip, wherein an angle formed by a lower face of the semiconductor chip and an upper face of the second portion adjacent to the lower face is 80 degrees or less.

MICRO LED DISPLAY AND METHOD FOR MANUFACTURING THE SAME

A method for manufacturing a micro light emitting diode (LED) display is provided. The method includes a first operation of applying a light-to-heat conversion layer to a first surface of a carrier substrate, a second operation of forming a first adhesive layer on the light-to-heat conversion layer a third operation of aligning a plurality of micro LED chips on the first adhesive layer, a fourth operation of positioning the plurality of micro LED chips above a circuit board at a first distance, a fifth operation of radiating a laser to the plurality of micro LED chips, and a sixth operation of causing the first adhesive layer to be deformed by the light-to-heat conversion layer, so that the plurality of micro LED chips are detached from the first adhesive layer to be attached to the circuit board. Various other embodiments are possible. 1. A method for manufacturing a micro light emitting diode (LED) display , the method comprising:a first operation of applying a light-to-heat conversion layer to a first surface of a carrier substrate;a second operation of forming a first adhesive layer on the light-to-heat conversion layer;a third operation of aligning a plurality of micro LED chips on the first adhesive layer;a fourth operation of positioning the plurality of micro LED chips above a circuit board at a first distance;a fifth operation of radiating a laser to the plurality of micro LED chips; anda sixth operation of causing the first adhesive layer to be deformed by the light-to-heat conversion layer, so that the plurality of micro LED chips are detached from the first adhesive layer to be attached to the circuit board.2. The method of claim 1 , wherein the light-to-heat conversion layer converts light energy into heat energy to cause deformation of the first adhesive layer to which each of the micro LED chips is attached.3. The method of claim 2 , wherein a deformed part of the first adhesive layer has a downward convex shape.4. The method of claim 1 , a conductive ...

ANISOTROPIC CONDUCTIVE FILM AND MANUFACTURING METHOD THEREOF

An anisotropic conductive film A includes a conductive particle array layer in which a plurality of conductive particles are arrayed in a prescribed manner and held in an insulating resin layer The anisotropic conductive film A has a direction in which a thickness distribution, around the individual conductive particle, of the insulating resin layer holding the array of the conductive particles is asymmetric with respect to the conductive particle The direction in which the thickness distribution is asymmetric is aligned in the same direction in the plurality of conductive particles. When an electronic component is mounted using this anisotropic conductive film A, short circuits and conductive failure can be reduced. 1. An anisotropic conductive film comprising:a conductive particle array layer in which a plurality of conductive particles are arrayed in a prescribed manner and held in an insulating resin layer, the anisotropic conductive film having a direction in which a thickness distribution, around the individual conductive particle, of the insulating resin layer holding the array of the conductive particles is asymmetric with respect to the conductive particle.2. The anisotropic conductive film according to claim 1 , wherein the direction in which the thickness distribution is asymmetric is aligned in the same direction in the plurality of conductive particles.3. The anisotropic conductive film according to claim 1 , wherein in a cross section of the anisotropic conductive film when the anisotropic conductive film is cut in the direction in which the thickness distribution is asymmetric claim 1 , the direction passing through a center of the conductive particle claim 1 , an area of the insulating resin layer surrounding the conductive particle is configured such that an area on one side of the conductive particle is smaller than an area on the other side.4. The anisotropic conductive film according to claim 3 , wherein in the cross section of the anisotropic ...

Transferring member and pressure applying unit

Provided is transferring members having a plate-like shape used in baking a metal particle paste of an assembled body formed by arranging an electronic part on a substrate with the metal particle paste interposed therebetween by applying pressure to the assembled body and by heating the assembled body, the transferring members being configured to sandwich the assembled body in baking the metal particle paste, wherein the transferring members are made of a material having thermal conductivity which falls within a range of from 1 to 200 W/(m k) and Vickers hardness which falls within a range of from 180 to 2300 kgf/mm 2 . With such a configuration, it is possible to provide a transferring member for being used in a method of manufacturing a bonded body which can suppress the lowering of bonding property between a substrate and an electronic part and which can prevent the remarkable lowering of productivity of a bonded body.

MEMBER CONNECTION METHOD AND ADHESIVE TAPE

This member connection method includes: a cutting step of forming cutting lines C in an adhesive layer at predetermined intervals at least in a width direction of an adhesive tape and making segments of the adhesive layer divided by the cutting lines C continuous at least in a lengthwise direction of the adhesive tape; a transfer step of disposing the segments to face a connection surface of one member to be connected, pressing a heating and pressing tool having an arbitrary pattern shape against the adhesive tape from a separator side and selectively transferring the segments to the one member to be connected; and a connection step for connecting another member to be connected to the one member to be connected via the segments transferred to the one member to be connected. 1. A member connection method for connecting members to be connected using an adhesive tape having an adhesive layer provided on one surface side of a separator , comprising:a cutting step of forming cutting lines in the adhesive layer at a predetermined interval at least in a width direction of the adhesive tape and making segments of the adhesive layer divided by the cutting lines continuous at least in a lengthwise direction of the adhesive tape;a transfer step of disposing the segments of the adhesive layer to face a connection surface of one member to be connected, pressing a heating and pressing tool having an arbitrary pattern shape against the adhesive tape from a separator side and selectively transferring the segments of the adhesive layer corresponding to a pressing portion of the heating and pressing tool to the one member to be connected; anda connection step of connecting another member to be connected to the one member to be connected via the segments of the adhesive layer transferred to the one member to be connected.2. The member connection method according to claim 1 , wherein claim 1 , in the cutting step claim 1 , the cutting lines are formed in the adhesive layer at ...

Conductive Paste For Bonding

The present invention relates to a conductive paste for bonding comprising 100 parts by weight of the metal powder, 5 to 20 parts by weight of a solvent, and 0.05 to 3 parts by weight of a polymer, wherein the polymer comprises a first polymer and a second polymer, wherein the molecular weight (Mw) of the first polymer is 5,000 to 95,000, and the molecular weight (Mw) of the second polymer is 100,000 to 300,000.

ANISOTROPIC CONDUCTIVE FILM AND PRODUCTION METHOD OF THE SAME

An anisotropic conductive film has a first connection layer and a second connection layer formed on surface of the first connection layer. The first connection layer is a photopolymerized resin layer, and the second connection layer is a thermo- or photo-cationically, anionically, or radically polymerizable resin layer. On the surface of first connection layer on the side of second connection layer, conductive particles for anisotropic conductive connection are arranged in a single layer. A region in which the curing ratio is lower than that of the surface of the first connection layer exists in a direction oblique to the thickness direction of the first connection layer. Alternatively, the curing ratio of a region relatively near another surface of the first connection layer among regions of the first connection layer in the vicinity of the conductive particles is lower than that of the surface of the first connection layer. 1. An anisotropic conductive film comprising a first connection layer and a second connection layer formed on a surface of the first connection layer , whereinthe first connection layer is a photopolymerized resin layer,the second connection layer is a thermo- or photo-cationically, anionically, or radically polymerizable resin layer,conductive particles for anisotropic conductive connection are arranged in a single layer on the surface of the first connection layer, anda region in which a curing ratio is lower than that of the surface of the first connection layer exists in a direction oblique to a thickness direction of the first connection layer.2. An anisotropic conductive film comprising a first connection layer and a second connection layer formed on a surface of the first connection layer , whereinthe first connection layer is a photopolymerized resin layer,the second connection layer is a thermo- or photo-cationically, anionically, or radically polymerizable resin layer,conductive particles for anisotropic conductive connection are ...

ANISOTROPIC CONDUCTIVE FILM AND PRODUCTION METHOD OF THE SAME

An anisotropic conductive film has a first connection layer and a second connection layer formed on a surface of the first connection layer. The first connection layer is a photopolymerized resin layer, and the second connection layer is a thermo- or photo-cationically, anionically, or radically polymerizable resin layer. Conductive particles for anisotropic conductive connection are arranged on a surface of the first connection layer on a side of the second connection layer so that the embedding ratio of the conductive particles in the first connection layer is 80% or more, or 1% or more and 20% or less. 1. An anisotropic conductive film having a first connection layer and a second connection layer formed on a surface of the first connection layer , whereinthe first connection layer is a photopolymerized resin layer,the second connection layer is a thermo- or photo-cationically, anionically, or radically polymerizable resin layer, andthe first connection layer has conductive particles for anisotropic conductive connection that are arranged in a single layer on a surface on a side of the second connection layer, and the conductive particles are embedded in the first connection layer at an embedding ratio of 80% or more, or 1% or more and 20% or less.2. The anisotropic conductive film according to claim 1 , wherein the first connection layer is a photo-radically polymerized resin layer obtained by photo-radically polymerizing a photo-radically polymerizable resin layer containing an acrylate compound and a photo-radical polymerization initiator.3. The anisotropic conductive film according to claim 2 , wherein the first connection layer further contains an epoxy compound and a thermo- or photo-cationic or anionic polymerization initiator.4. The anisotropic conductive film according to claim 1 , wherein the second connection layer is a thermo- or photo-cationically or anionically polymerizable resin layer containing an epoxy compound and a thermo- or photo-cationic or ...

LASER BONDING METHOD

Provides is a laser bonding method. The method includes forming a bonding part on a substrate; aligning a bonding target on the bonding part and bonding the bonding part and the bonding target. The bonding includes heating the bonding part using a laser. The bonding part formed on the substrate includes an adhesive layer and a conductive particle located in the adhesive layer. 1. A laser bonding method comprising:forming a bonding part on a substrate;aligning a bonding target on the bonding part; andbonding the bonding part and the bonding target,wherein the bonding comprises heating the bonding part using a laser,wherein the bonding part formed on the substrate comprises an adhesive layer and a conductive particle located in the adhesive layer.2. The method of claim 1 , wherein the bonding comprises:bonding an upper part of the conductive particle to a pad of the bonding target; andbonding a lower part of the conductive particle to a pad of the substrate.3. The method of claim 2 , wherein the conductive particle is provided in plurality.4. The method of claim 2 , wherein the bonding of the upper part of the conductive particle to the pad of the bonding target comprises forming an upper intermetallic compound by the upper part of the conductive particle and the pad of the bonding target claim 2 ,wherein the bonding of the lower part of the conductive particle to the pad of the bonding target comprises forming a lower intermetallic compound by the lower part of the conductive particle and the pad of the bonding target.5. The method of claim 2 , wherein the bonding further comprises pressing the bonding target through a pressing part.6. The method of claim 5 , wherein the pressing part comprises a quartz.7. The method of claim 2 , wherein the bonding part further comprises a spacer provided in the adhesive layer.8. The method of claim 1 , wherein the bonding part further comprises a reducing agent claim 1 , wherein the bonding further comprises removing an oxide film ...

Bonding film, tape for wafer processing, method for producing bonded body, and bonded body and pasted body

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

Multi-Chip Device, Method of Manufacturing a Multi-Chip Device, and Method of Forming a Metal Interconnect

A multi-chip device is provided. The multi-chip device includes a first chip, a second chip mounted on the first chip, and a hardened printed or sprayed electrically conductive material forming a sintered electrically conductive interface between the first chip and the second chip.

ANISOTROPIC CONDUCTIVE FILM

An anisotropic conductive film capable of accommodating bumps with a narrow pitch and reducing the number density of conductive particles in comparison to known anisotropic conductive films. In an anisotropic conductive film, conductive particles are disposed in an insulating resin binder, and repeating units of polygons formed by successively connecting the centers of a plurality of conductive particles are disposed repeatedly in the vertical and horizontal directions in a plan view. The sides of the polygons of the repeating units intersect diagonally with the long-side direction or the short-side direction of the anisotropic conductive film. 1. An anisotropic conductive film comprising conductive particles disposed in an insulating resin binder ,wherein repeating units of polygons formed by successively connecting the centers of a plurality of conductive particles are repeatedly disposed in a plan view; andthe polygons of the repeating units have sides intersecting diagonally with a long-side direction or a short-side direction of the anisotropic conductive film.2. The anisotropic conductive film according to claim 1 , wherein the repeating units are disposed all over the anisotropic conductive film.3. The anisotropic conductive film according to claim 1 , wherein the repeating units are trapezoids.4. The anisotropic conductive film according to claim 1 , wherein each side of the polygons forming the repeating units intersects diagonally with a long-side direction or a short-side direction of the anisotropic conductive film.5. The anisotropic conductive film according to claim 1 , wherein the polygons forming the repeating units have a side in a long-side direction or a short-side direction of the anisotropic conductive film.6. The anisotropic conductive film according to claim 1 , wherein when the polygons forming the repeating units are inverted around one side of the polygons claim 1 , one side of a polygon of a repeating unit after inversion overlaps with one ...

ANISOTROPIC CONDUCTIVE FILM AND MANUFACTURING METHOD THEREOF

An anisotropic conductive film 1A includes a conductive particle array layer 4 in which a plurality of conductive particles 2 are arrayed in a prescribed manner and held in an insulating resin layer The anisotropic conductive film 1A has a direction in which a thick distribution, around the individual conductive particle, of the insulating resin layer 3 holding the array of the conductive particles 2 is asymmetric with respect to the conductive particle 2. The direction in which the thickness distribution is asymmetric is aligned in the same direction in the plurality of conductive particles. When an electronic component is mounted using this anisotropic conductive film 1A, short circuits and conductive failure can be reduced. 1. An anisotropic conductive film comprising:a conductive particle array layer in which a plurality of conductive particles are arrayed in a prescribed manner and held in an insulating resin layer,wherein the anisotropic conductive film has a resin amount distribution, around the individual conductive particle, of the insulating resin layer holding the array of the conductive particles, and the resin amount distribution has a direction in which a resin amount decreases.2. The anisotropic conductive film according to claim 1 , wherein claim 1 , in a film surface direction claim 1 , the resin amount distribution claim 1 , around the individual conductive particle claim 1 , of the insulating resin layer holding the array of the conductive particles has a direction in which a resin amount decreases.3. The anisotropic conductive film according to claim 1 , wherein the direction in which the resin amount is less aligned in the same direction in the plurality of conductive particles.4. The anisotropic conductive film according to claim 1 , wherein in a cross section of the anisotropic conductive film when the anisotropic conductive film is cut in the direction in which the resin amount decreases claim 1 , the direction passing through a center of the ...

ELECTRONIC DEVICE

According to a first aspect of the present disclosure, an electronic device is provided which comprises: a substrate; an integrated circuit; a layer of conductive glue between the substrate and the integrated circuit; at least one first electrode connected to the conductive glue and at least one second electrode connected to the conductive glue; wherein the first electrode and the second electrode are arranged to receive a voltage generator input, such that a capacitance develops between said first electrode and second electrode, wherein at least a part of said capacitance develops through the layer of conductive glue; and wherein the first electrode and the second electrode are arranged to output said capacitance According to a second aspect of the present disclosure, a corresponding method of manufacturing an electronic device is conceived. 2. A device as claimed in claim 1 , wherein the capacitance depends on the distribution of conductive particles in the layer of conductive glue.3. A device as claimed in claim 2 , wherein the distribution of conductive particles implements a physical unclonable function.4. A device as claimed in claim 1 , further comprising:a voltage generator being arranged to generate the voltage generator input;a measurement unit being arranged to measure said capacitance and to output a corresponding capacitance value;a processing unit which is arranged to receive at least one capacitance value from the measurement unit, and to compare said capacitance value with a reference value.5. A device as claimed in claim 4 , wherein the processing unit is further arranged to correct the capacitance value for environmental influences.6. A device as claimed in claim 4 , wherein the integrated circuit comprises at least one of: the processing unit claim 4 , the first electrode claim 4 , the second electrode claim 4 , the voltage generator claim 4 , the measurement unit.7. A device as claimed in claim 1 ,further comprising a plurality of pairs of first ...

Semiconductor device and a method of manufacturing thereof

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

DISPLAY PANEL, METHOD FOR MANUFACTURING THE DISPLAY PANEL, AND DISPLAY DEVICE

The present disclosure provides a display panel, a method for manufacturing the display panel, and a display device. The display panel includes a substrate; a printed circuit board; a chip on film; an anisotropic conductive adhesive layer, connected between the chip on film and the substrate, and between the chip on film and the printed circuit board. 1. A display panel , wherein , the display panel comprises:a substrate, etching and forming a plurality of first electrode lines arranged in parallel;a printed circuit board, etching and forming a plurality of second electrode lines arranged in parallel;a chip on film, comprising a first bonding end corresponding to the first electrode line and a second bonding end corresponding to the second electrode line; andan anisotropic conductive adhesive layer, connected between the first electrode line and the first bonding end, and between the second electrode line and the second bonding end.2. The display panel according to claim 1 , wherein the anisotropic conductive adhesive layer has a thickness of 5 micrometers and 10 micrometers.3. The display panel according to claim 2 , wherein the thickness of the anisotropic conductive adhesive is 8 micrometers.4. The display panel according to claim 1 , wherein the anisotropic conductive adhesive layer comprises a photo-curing agent.5. The display panel according to claim 1 , wherein the anisotropic conductive adhesive layer comprises a thermal curing agent.6. A method for manufacturing display panel claim 1 , comprising the following operations:manufacturing colloidal anisotropic conductive agent;coating the anisotropic conductive agent on each electrode line of a substrate and each electrode line of a printed circuit board, or coating the anisotropic conductive agent on two ends of a chip on film; andpressing the two ends of the chip on film with the electrode lines of the substrate and the printed circuit board respectively.7. The method according to claim 6 , wherein the ...

Semiconductor device and method for manufacturing the same

The semiconductor device includes a metal plate, a semiconductor element held on the metal plate, a wiring board connected to a surface electrode of the semiconductor element in a facing manner and a conductor fixed to the wiring board wired to the semiconductor element. The conductor has a plate-like shape. One end of the conductor is arranged to be connectable to an outside. One surface side of another end of the conductor is fixed to a surface of the wiring hoard. The conductor includes at least one protruding step on the one surface of the other end. A top portion of the protruding step includes a contact surface parallel to the surface of the wiring board. The other end of the conductor is fixed to the wiring board by the contact surface and the surface of the wiring board coming into close contact with each other.

Semiconductor dies having ultra-thin wafer backmetal systems, microelectronic devices containing the same, and associated fabrication methods

Semiconductor dies including ultra-thin wafer backmetal systems, microelectronic devices containing such semiconductor dies, and associated fabrication methods are disclosed. In one embodiment, a method for processing a device wafer includes obtaining a device wafer having a wafer frontside and a wafer backside opposite the wafer frontside. A wafer-level gold-based ohmic bond layer, which has a first average grain size and which is predominately composed of gold, by weight, is sputter deposited onto the wafer backside. An electroplating process is utilized to deposit a wafer-level silicon ingress-resistant plated layer over the wafer-level Au-based ohmic bond layer, while imparting the plated layer with a second average grain size exceeding the first average grain size. The device wafer is singulated to separate the device wafer into a plurality of semiconductor die each having a die frontside, an Au-based ohmic bond layer, and a silicon ingress-resistant plated layer.

CONDUCTIVE DIE ATTACH FILM FOR LARGE DIE SEMICONDUCTOR PACKAGES AND COMPOSITIONS USEFUL FOR THE PREPARATION THEREOF

Provided herein are conductive die attach films having advantageous properties for use in a variety of applications, e.g., for the preparation of large die semiconductor packages. Also provided are formulations useful for the preparation of such films, as well as methods for making such formulations. In additional aspects of the present invention, there are provided conductive networks prepared from compositions according to the present invention. In additional aspects, the invention further relates to articles comprising such conductive die attach films adhered to a suitable substrate therefor. 2. The composition of optionally further comprising one or more flow additives claim 1 , adhesion promoters claim 1 , conductivity additives claim 1 , rheology modifiers claim 1 , or mixtures of any two or more thereof.3. The composition of wherein the degree of substitution of imide moieties on the backbone of said first maleimide claim 1 , nadimide or itaconimide is at least 0.8 imide moieties per repeat unit of said backbone.5. The composition of wherein J is heterocyclic claim 4 , oxyheterocyclic claim 4 , thioheterocyclic claim 4 , aminoheterocyclic claim 4 , carboxyheterocyclic claim 4 , oxyaryl claim 4 , thioaryl claim 4 , aminoaryl claim 4 , carboxyaryl claim 4 , heteroaryl claim 4 , oxyheteroaryl claim 4 , thioheteroaryl claim 4 , aminoheteroaryl claim 4 , carboxyheteroaryl claim 4 , oxyalkylaryl claim 4 , thioalkylaryl claim 4 , aminoalkylaryl claim 4 , carboxyalkylaryl claim 4 , oxyarylalkyl claim 4 , thioarylalkyl claim 4 , aminoarylalkyl claim 4 , carboxyarylalkyl claim 4 , oxyarylalkenyl claim 4 , thioarylalkenyl claim 4 , aminoarylalkenyl claim 4 , carboxyarylalkenyl claim 4 , oxyalkenylaryl claim 4 , thioalkenylaryl claim 4 , aminoalkenylaryl claim 4 , carboxyalkenylaryl claim 4 , oxyarylalkynyl claim 4 , thioarylalkynyl claim 4 , aminoarylalkynyl claim 4 , carboxyarylalkynyl claim 4 , oxyalkynylaryl claim 4 , thioalkynylaryl claim 4 , aminoalkynylaryl or ...

NOBLE METAL PASTE FOR BONDING OF SEMICONDUCTOR ELEMENT

A precious metal paste which does not cause contamination of a member, which can be uniformly coated to a member to be bonded, and which is in good condition after bonding is provided. The present invention relates to a precious metal paste for bonding a semiconductor element, of the paste including a precious metal powder and an organic solvent, in which the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 μm, the organic solvent has a boiling point of 200 to 350° C., and a thixotropy index (TI) value calculated from a measurement value of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer is 6.0 or more. 1. A precious metal paste for bonding a semiconductor element , the paste consisting essentially of either a precious metal powder and an organic solvent , or a precious metal powder , an organic solvent and surfactant , and not containing any resin , wherein the precious metal powder has a purity of 99.9 mass % or more and an average particle diameter of 0.1 to 0.5 μm , and the organic solvent has a boiling point of 200 to 350° C. , wherein the organic solvent is made of one organic solvent only , which one organic solvent is a branched-chain aliphatic dihydroxy alcohol having a carbon number of 5 to 20 , and which branched-chain aliphatic dihydroxy alcohol consists of 1 ,5-pentanediol or derivatives thereof , and wherein the precious metal paste has a thixotropy index (TI) value of 6.1 or more , of a viscosity at a shear rate of 4/s with respect to a viscosity at a shear rate of 40/s at 23° C. by means of a rotational viscometer , and a viscosity at a shear rate of 4/s which is 100 to 1000 Pa·s.2. The precious metal paste according to claim 1 , wherein the precious metal powder comprises any one or more of a gold powder and a silver powder.3. The precious metal paste according to claim 1 , wherein a volume content of the ...

Electronic component and semiconductor device

An electronic component includes a substrate having a first main surface on one side and a second main surface on the other side, a chip having a first chip main surface on one side and a second chip main surface on the other side, and a plurality of electrodes formed on the first chip main surface and/or the second chip main surface, the chip being arranged on the first main surface of the substrate, a sealing insulation layer that seals the chip on the first main surface of the substrate such that the second main surface of the substrate is exposed, the sealing insulation layer having a sealing main surface that opposes the first main surface of the substrate, and a plurality of external terminals formed to penetrate through the sealing insulation layer so as to be exposed from the sealing main surface of the sealing insulation layer, the external terminals being respectively electrically connected to the plurality of electrodes of the chip.

MULTILAYERED TRANSIENT LIQUID PHASE BONDING

A bonding structure includes a first layer of first alloy component disposed on a substrate and a first layer of a second alloy component disposed on the first alloy component. The second alloy component has a lower melting temperature than the first alloy component. A second layer of the first alloy component is disposed on the first layer of the second alloy component and a second layer of the second alloy component is disposed on the second layer of the first alloy component. 1. A bonding structure comprising:a first layer of a first alloy component having an upper surface disposed on a substrate;a first interfacial barrier layer having an upper surface directly disposed on a lower surface of the first layer of the first alloy component;a first layer of a second alloy component having an upper surface disposed directly on a lower surface of the first interfacial barrier layer, the second alloy component having a lower melting temperature than the first alloy component;a second interfacial barrier layer having an upper surface directly disposed on a lower surface of the first layer of the second alloy component;a second layer of the first alloy component having an upper surface disposed directly on a lower surface of the second interfacial barrier layer;a third interfacial barrier layer having an upper surface directly disposed on a lower surface of the second layer of the first alloy component; anda second layer of the second alloy component having an upper surface disposed directly on a lower surface of the third interfacial barrier layer.2. The bonding structure of further comprising a third layer of the first alloy component disposed on the second layer of the second alloy component.3. The bonding structure of wherein one of the first interfacial barrier layer claim 1 , the second interfacial barrier layer claim 1 , and the third interfacial barrier layer is configured to suppress inter-diffusion of the first alloy component and the second alloy component.4. ...

COMPOSITION FOR ANISOTROPIC CONDUCTIVE FILM, ANISOTROPIC CONDUCTIVE FILM, AND CONNECTION STRUCTURE USING THE SAME

An anisotropic conductive film composition, an anisotropic conductive film prepared using the same, and a connection structure using the same, the anisotropic conductive film including a binder resin; a curable alicyclic epoxy compound; a curable oxetane compound; a quaternary ammonium catalyst; and conductive particles, wherein the anisotropic conductive film has a heat quantity variation rate of about 15% or less, as measured by differential scanning calorimetry (DSC) and calculated by Equation 1: 1. An anisotropic conductive film , comprising:a binder resin;a curable alicyclic epoxy compound;a curable oxetane compound;a quaternary ammonium catalyst; andconductive particles, {'br': None, 'i': H', '−H', 'H, 'sub': 0', '1', '0, 'Heat quantity variation rate (%)=[()/]×100\u2003\u2003Equation 1'}, 'wherein the anisotropic conductive film has a heat quantity variation rate of about 15% or less, as measured by differential scanning calorimetry (DSC) and calculated by Equation 1{'sub': 0', '1, 'wherein His a DSC heat quantity of the anisotropic conductive film, as measured at 25° C. and a time point of 0 hr, and His a DSC heat quantity of the anisotropic conductive film, as measured after being left at 40° C. for 24 hours.'}3. The anisotropic conductive film as claimed in claim 1 , wherein the oxetane compound is a carbon polymer compound containing 1 to 4 oxetane rings per molecule.5. The anisotropic conductive film as claimed in claim 4 , wherein M is SbF or B(CF).6. The anisotropic conductive film as claimed in claim 1 , wherein the binder resin includes a polyimide resin claim 1 , a polyamide resin claim 1 , a phenoxy resin claim 1 , a polymethacrylate resin claim 1 , a polyacrylate resin claim 1 , a polyurethane resin claim 1 , a polyester resin claim 1 , a polyester urethane resin claim 1 , a polyvinyl butyral resin claim 1 , a styrene-butadiene-styrene (SBS) resin or an epoxylated compound thereof claim 1 , a styrene-ethylene/butylene-styrene (SEBS) resin or a ...

Semiconductor device and semiconductor apparatus

A semiconductor device that comprises a substrate with a primary surface and a secondary surface opposite to the primary surface. The primary surface provides a semiconductor active device. The semiconductor device includes a base metal layer deposited on the secondary surface and within the substrate via in which a vacancy is formed, and an additional metal layer on the base metal layer, the additional metal layer having different wettability against a solder as compared to the base metal layer whereby the solder is contactable by the base metal layer and repelled by the additional metal layer. The semiconductor device is die-bonded on the assembly substrate by interposing the solder between the secondary surface and the assembly substrate. The base metal layer in a portion that excepts the substrate via and a periphery of the substrate via by partly removing the additional metal layer is in contact with the solder.

SEMICONDUCTOR ELEMENT BONDING PORTION AND SEMICONDUCTOR DEVICE

An object is to provide highly reliable semiconductor element bonding portion and semiconductor device that have high heat resistance and improved adhesion between a bonding material and a sealing resin. Provided is a semiconductor element bonding portion in which the semiconductor element and an electrically conductive plate are bonded to each other by a bonding layer and the bonding layer includes a metal nanoparticle sintered body and a coupling agent including an SH group. 1. A semiconductor element bonding portion comprising:a semiconductor element;a laminated substrate; anda bonding layer that bonds the semiconductor element and the laminated substrate to each other, whereinthe bonding layer includes a sintered body of a metal nanoparticle and a silane coupling agent including an SH group.2. The semiconductor element bonding portion according to claim 1 , wherein claim 1 , in the bonding layer claim 1 , a periphery of the sintered body of the metal nanoparticle is coated with the silane coupling agent.3. The semiconductor element bonding portion according to claim 1 , wherein the metal nanoparticle is one or more particles selected from a group consisting of a silver nanoparticle claim 1 , a copper nanoparticle claim 1 , and a gold nanoparticle.4. The semiconductor element bonding portion according to claim 1 , wherein the semiconductor element includes a gold electrode on a contact surface with the bonding layer.5. A semiconductor device comprising:sealed members including an electrically conductive connection member and a semiconductor element mounted on a laminated substrate;a sealant that seals the sealed members; and{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'the semiconductor element bonding portion according to .'}6. The semiconductor device according to claim 5 , wherein the sealant contains a thermosetting resin curing agent.7. The semiconductor device according to claim 5 , further comprising a primer layer at an interface between the sealant ...

Anisotropic electrically conductive film and connection structure

An anisotropic electrically conductive film includes electrically conductive particles disposed in an electrically insulating adhesive layer. The particles are arranged at a predetermined pitch along first axes, arranged side by side, and are substantially spherical. The particle pitch at the first axes and the axis pitch of the first axes are both greater than or equal to 1.5D, D being an average particle diameter of the particles. Directions of all sides of a triangle formed by a particle (P 0 ), which is one of the electrically conductive particles at one of the first axes, an electrically conductive particle (P 1 ), which is at the one of the first axes and adjacent to the particle (P 0 ), and an electrically conductive particle (P 2 ), which is at another one of the first axes that is adjacent to the one of the first axes, are oblique to a film width direction of the conductive film.

Light emitting device mount, light emitting apparatus including the same, and leadframe

A mount includes a terminal, and a resin portion. The terminal includes a first surface, a second surface, and an end surface having first and second recessed areas that are extend from the first and second surfaces, respectively. The resin portion is integrally formed with the terminal, and at least partially covers the end surface so that the first and second surfaces are at least partially exposed. The resin portion forms a recessed part to accommodate the light emitting device. The second recessed area includes a closest point that is positioned closest to the first surface, and an extension part that extends outward of the closest point and toward the second surface side. The extension part is formed at least on opposing end surfaces of the pair of positive and negative lead terminal. The first recessed area is arranged on the exterior side relative to the closest point.

Electroconductive adhesive

Provided is an electroconductive adhesive which is less apt to suffer cracking, chipping, etc. upon sintering and gives sintered objects having excellent mechanical strength. The electroconductive adhesive comprises metallic microparticles which include a protective layer comprising one or more amines and have an average particle diameter of 30-300 nm, the amines comprising a C5-7 monoalkylamine and/or an alkoxyamine represented by the following general formula (1). NH2—R2—O—R1 (1) In the protective layer, the ratio of the C5-7 monoalkylamine and/or alkoxyamine represented by the general formula (1) to one or more amines different therefrom is in the range of 100:0 to 10:90. [In formula (1), R1 represents a C1-4 alkyl group and R2 represents a C1-4 alkylene group.]

Semiconductor device

According to the present invention, a semiconductor having excellent yield is provided. The semiconductor device ( 10 ) of the present invention includes: a base material (die pad) ( 2 ), a semiconductor element( 3 ), and an adhesive layer( 1 ) intervening the space between the base material and the semiconductor element ( 3 ) to adhere the base material and the semiconductor element. Thermal conductive filler ( 8 ) is contained in the adhesive layer ( 1 ), and when the content of the thermal conductive filler dispersed in the whole of the adhesive layer is expressed as C, the content of the thermal conductive filler in the region 1 ranging from the interface of the adhesive layer at the side of the semiconductor element to the depth by 2 μm is expressed as C1, and the content of the thermal conductive filler in the region 2 ranging from the interface of the adhesive layer at the side of the base material to the depth by 2 μm is expressed as C2, the following formulae are satisfied: C 1< C , and C 2< C.

ELECTRONIC DEVICE, ELECTRONIC DEVICE FABRICATION METHOD, AND ELECTRONIC APPARATUS

An electronic device includes an electronic part including a first substrate having a group of first terminals over a first front surface and having a concavity in a back surface, a filler placed in the concavity, and a flat plate placed over the back surface with the filler therebetween, and further includes a second substrate disposed on the first front surface side of the first substrate and having a group of second terminals bonded to the group of first terminals over a second front surface opposite the first front surface. The filler and flat plate minimize deformation of the first substrate and variation in the distance between the group of first terminals and the group of second terminals caused by the deformation of the first substrate, which thereby reduces the occurrence of a failure in bonding together the group of first terminals and the group of second terminals. 1. An electronic device comprising:a first substrate having a group of first terminals over a first surface and having a concavity in a second surface opposite to the first surface;a filler placed in the concavity;a flat plate placed over the second surface with the filler therebetween; anda second substrate disposed on a first surface side of the first substrate and having a group of second terminals bonded to the group of first terminals over a third surface opposite the first surface.2. The electronic device according to claim 1 , wherein the first substrate is a wafer including semiconductor elements.3. The electronic device according to claim 1 , wherein the first substrate is a semiconductor element.4. The electronic device according to claim 1 , wherein at least one of the group of first terminals and the group of second terminals are protrusions.5. The electronic device according to claim 1 , wherein the filler has a heat conduction property higher than or equal to a heat conduction property of the first substrate.6. The electronic device according to claim 1 , wherein the flat plate ...

Semiconductor device and method for manufacturing the same

To miniaturize metal columns. A semiconductor device includes a metal column ( 14 ) that extends in a stretching direction; a polymer layer ( 16 ) that surrounds the metal column from a direction crossing the stretching direction; and a guide ( 12 ) that surrounds the polymer layer in the crossing direction so as to be spaced from the metal column with the polymer layer interposed therebetween. A method for manufacturing semiconductor devices includes a step of filling a mixture ( 20 ) containing metal particles ( 22 ) and polymers ( 24 ) in a guide ( 12 ); and a step of subjecting the mixture to a heat treatment so that the polymers agglomerate to the guide to form a polymer layer ( 16 ) that makes contact with the guide and the metal particles agglomerate away from the guide with the polymer layer interposed therebetween to form a metal column ( 14 ) that stretches in a stretching direction of the guide from the metal particles.

Anisotropic conductive film including conductive adhesive layer and semiconductor device connected by the same

An anisotropic conductive film includes a conductive adhesive layer including conductive particles and insulating particles, and an insulating adhesive layer not including conductive particles. In the anisotropic conductive film, the conductive particles and the insulating particles of the conductive adhesive layer have a total particle density of 7.0×10 5 /d 2 to 10.0×10 5 /d 2 (particles) per square millimeter (mm 2 ) (where d is a diameter of the conductive particles in μm).

Low-Temperature Bonding With Spaced Nanorods And Eutectic Alloys

Bonded surfaces are formed by adhering first nanorods and second nanorods to respective first and second surfaces. The first shell is formed on the first nanorods and the second shell is formed on the second nanorods, wherein at least one of the first nanorods and second nanorods, and the first shell and the second shell are formed of distinct metals. The surfaces are then exposed to at least one condition that causes the distinct metals to form an alloy, such as eutectic alloy having a melting point below the temperature at which the alloy is formed, thereby bonding the surfaces upon which solidification of the alloy.

Electronic device

According to a first aspect of the present disclosure, an electronic device is provided which comprises: a substrate; an integrated circuit; a layer of glue between the substrate and the integrated circuit; a set of driving electrodes coupled to the glue and to the integrated circuit; a receiving electrode coupled to the glue and to the integrated circuit; a counter electrode coupled to the glue and to the substrate; wherein the glue comprises conductive particles which electrically connect the receiving electrode, the counter electrode and at least a part of the set of driving electrodes, such that, if drive currents are provided to said set of driving electrodes, at least a part of the drive currents flows to the receiving electrode through the conductive particles and the counter electrode. According to a second aspect of the present disclosure, a corresponding method of manufacturing an electronic device is conceived.

CONNECTION BODY AND METHOD OF MANUFACTURING CONNECTION BODY

A connection body includes a circuit board terminals arranged into terminal rows, the terminals rows being arranged in parallel to one another in a widthwise direction orthogonal to a direction in which the terminals are arranged, and an electronic component including bumps arranged into bump rows corresponding to the terminal rows, the bumps being arranged in parallel to one another in a widthwise direction orthogonal to a direction in which the bumps are arranged. The electronic component is connected upon the circuit board interposed by an anisotropic conductive adhesive including electrically conductive particles arranged therein. A distance between mutually opposing terminals of the terminals and bumps of the bumps arranged toward the outer sides of the circuit board and the electronic component is greater than a distance between mutually opposing terminals of the terminals and bumps of the bumps arranged toward their inner sides. 1. A connection body comprising:a circuit board comprising a plurality of terminals arranged into a plurality of terminal rows, the plurality of terminal rows being arranged in parallel to one another in a widthwise direction orthogonal to a direction in which the plurality of terminals are arranged; andan electronic component comprising a plurality of bumps arranged into a plurality of bump rows corresponding to the plurality of terminal rows, the plurality of bump rows being arranged in parallel to one another in a widthwise direction orthogonal to a direction in which the plurality of bumps are arranged,whereinthe electronic component is connected upon the circuit board interposed by an anisotropic conductive adhesive comprising electrically conductive particles arranged therein,a distance between mutually opposing terminals of the plurality of terminals and bumps of the plurality of bumps arranged toward outer sides of the circuit board and the electronic component is greater than a distance between mutually opposing terminals of ...

ALIGNMENT METHOD, METHOD FOR CONNECTING ELECTRONIC COMPONENT, METHOD FOR MANUFACTURING CONNECTION BODY, CONNECTION BODY AND ANISOTROPIC CONDUCTIVE FILM

An alignment mark at a position that overlaps an area in which an anisotropic conductive film is pasted, and to accurately perform alignment using an image captured by a camera. An alignment method in which an electronic component is mounted on the obverse surface of a transparent substrate with a conductive adhesive agent interposed therebetween, a substrate-side alignment mark and a component-side alignment mark are adjusted from the captured image, and the position at which the electronic component is mounted on the transparent substrate is aligned, wherein in the conductive adhesive agent, conductive particles are in a regular arrangement as viewed from a planar perspective, and in the captured image, the outside edges of the alignment marks exposed between the conductive particles are intermittently visible as line segments (S) along the imaginary line segments of the outside edges of the alignment mark. 1. An alignment method comprising:mounting an electronic component having a component-side alignment mark onto a surface of a transparent substrate having a substrate-side alignment mark via an adhesive agent containing conductive particles interposed therebetween;imaging the substrate-side alignment mark and the electronic component-side alignment mark from the back surface side of the transparent substrate; andadjusting a position of the substrate-side alignment mark and the component-side alignment mark by using a captured image obtained by imaging to adjust a mounting position of the electronic component with respect to the transparent substrate;wherein the adhesive agent has the conductive particles arranged regularly as viewed from a planar perspective; andwherein in the captured image, outside edges of the substrate-side alignment mark or the component-side alignment mark exposed between the conductive particles are intermittently visible as line segments along imaginary line segments of the outside edges of the substrate-side alignment mark or the ...

Manufacturing method for semiconductor device

A semiconductor device manufacturing method includes a preparation step and a sinter bonding step. In the preparation step, a sinter-bonding work having a multilayer structure including a substrate, semiconductor chips, and sinter-bonding material layers is prepared. The semiconductor chips are disposed on, and will bond to, one side of the substrate. Each sinter-bonding material layer contains sinterable particles and is disposed between each semiconductor chip and the substrate. In the sinter bonding step, a cushioning sheet having a thickness of 5 to 5000 μm and a tensile elastic modulus of 2 to 150 MPa is placed on the sinter-bonding work, the resulting stack is held between a pair of pressing faces, and, in this state, the sinter-bonding work between the pressing faces undergoes a heating process while being pressurized in its lamination direction, to form a sintered layer from each sinter-bonding material layer.

ANISOTROPIC CONDUCTIVE FILM, METHOD FOR PRODUCING ANISOTROPIC CONDUCTIVE FILM, METHOD FOR PRODUCING CONNECTION BODY, AND CONNECTION METHOD

To reduce substrate warp occurring after connection an anisotropic conductive film is used. An anisotropic conductive film has: a first insulating adhesive layer; a second insulating adhesive layer; and a conductive particle-containing layer sandwiched by the first insulating adhesive layer and the second insulating adhesive layer and having conductive particles contained in an insulating adhesive, wherein air bubbles are contained between the conductive particle-containing layer and the first insulating adhesive layer, and, the conductive particle-containing layer, a portion thereof below the conductive particles and in contact with the second insulating adhesive layer has a lower degree of cure than other portions thereof. 1. A method for producing a connection body , the connection body being obtained by anisotropic conductive connection between a terminal of a first electronic component and a terminal of a second electronic component by using an anisotropic conductive film , the anisotropic conductive film comprising:a first insulating adhesive layer; anda conductive particle-containing layer laminated on the first insulating adhesive layer and having conductive particles each contained independently in an insulating adhesive;wherein air bubbles are contained between the conductive particle-containing layer and the first insulating adhesive layer, andwherein the air bubbles are contained in accordance with the conductive particles, the method comprising curing the anisotropic conductive film in a sandwiched state of sandwiching the anisotropic conductive film between the first electronic component and the second electronic component.2. A connection body obtained by anisotropic conductive connection between a first electronic component and a second electronic component by using an anisotropic conductive film , the anisotropic conductive film comprising:a first insulating adhesive layer; anda conductive particle-containing layer laminated on the first insulating ...

Anisotropic conductive film, method for producing anisotropic conductive film, method for producing connection body, and connection method

To reduce substrate warp occurring after connection an anisotropic conductive film is used. An anisotropic conductive film has: a first insulating adhesive layer; a second insulating adhesive layer; and a conductive particle-containing layer sandwiched by the first insulating adhesive layer and the second insulating adhesive layer and having conductive particles contained in an insulating adhesive, wherein air bubbles are contained between the conductive particle-containing layer and the first insulating adhesive layer, and, the conductive particle-containing layer, a portion thereof below the conductive particles and in contact with the second insulating adhesive layer has a lower degree of cure than other portions thereof.

SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF

A light-emitting module includes a common carrier; a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices including three semiconductor dies; a carrier including a connecting surface; a third bonding pad and a fourth bonding pad formed on the connecting surface; and a connecting layer. One of the three semiconductor dies includes a stacking structure; a first bonding pad; and a second bonding pad with a shortest distance less than 150 microns between the first bonding pad. The connecting layer includes a first conductive part including a first conductive material having a first shape; and a blocking part covering the first conductive part and including a second conductive material having a second shape with a diameter in a cross-sectional view. The first shape has a height greater than the diameter. 1. A light-emitting module , comprising:a common carrier;a plurality of semiconductor devices formed on the common carrier, and each of the plurality of semiconductor devices comprising at least three semiconductor dies; a stacking structure,', 'a first bonding pad with an outmost surface positioned away from the stacking structure, and', 'a second bonding pad,', 'wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 microns;, 'at least one of the three semiconductor dies comprisinga carrier comprising a connecting surface;a third bonding pad and a fourth bonding pad formed on the connecting surface of the carrier; and a first conductive part formed between the first bonding pad and the third bonding pad, and comprising a first conductive material having a first shape;', 'a second conductive part formed between the second bonding pad and the fourth bonding pad, and comprising the first conductive material; and', 'a blocking part covering the first conductive part and comprising a second conductive material having a second shape with a diameter in a cross- ...

METAL SINTERING PREPARATION AND THE USE THEREOF FOR THE CONNECTING OF COMPONENTS

A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm. 1. A metal sintering preparation comprising: (A) 50 to 90% by weight of silver that is present in the form of particles , wherein the particles comprise a coating containing at least one organic compound , (B) 6 to 50% by weight organic solvent , (C) 0 to 12% by weight of at least one metal precursor , (D) 0 to 10% by weight of at least one sintering aid , and (E) 0 to 15% by weight of one or more further ingredients selected from dispersion agents , surfactants , de-foaming agents , binding agents , polymers and/or viscosity-controlling rheological agents ,{'sup': '−1', 'wherein a mathematical product of tamped density and specific surface of the metal particles of component (A) is in a range of 40,000 to 70,000 cmand wherein at least 70% by weight of the particles are present in the form of flakes.'}2. The metal sintering preparation according to claim 1 , wherein the mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 50 claim 1 ,000 to 70 claim 1 ,000 cm.3. The metal sintering preparation according to claim 1 , comprising one claim 1 , two or more different types of metal particles.4. The metal sintering preparation according to claim 1 , wherein the at least one organic compound is selected from the group consisting of free fatty acids claim 1 , fatty acid salts claim 1 , and fatty acid esters.5. A method for the connecting of components comprising (a) providing a sandwich arrangement which comprises at least (a1) one component 1 claim 1 , (a2) one component 2 claim 1 , and (a3) one metal sintering preparation according to ...

Semiconductor device and ceramic circuit substrate, and producing method of semiconductor device

A semiconductor device comprises a circuit layer composed of a conductive material, and a semiconductor element mounted on the circuit layer, wherein an underlayer having a porosity in the range of 5 to 55% is formed on one surface of the circuit layer, a bonding layer composed of a sintered body of a bonding material including an organic substance and at least one of metal particles and metal oxide particles is formed on the underlayer, and the circuit layer and the semiconductor element are bonded together via the underlayer and the bonding layer.

Anisotropic electrically conductive film, method for producing same, and connection structural body

The present invention provides an anisotropic electrically conductive film with a structure, in which electrically conductive particles are disposed at lattice points of a planar lattice pattern in an electrically insulating adhesive base layer. A proportion of the lattice points, at which no electrically conductive particle is disposed, with respect to all the lattice points of the planar lattice pattern assumed as a reference region, is less than 20%. A proportion of the lattice points, at which plural electrically conductive particles are disposed in an aggregated state, with respect to all the lattice points of the planar lattice pattern, is not greater than 15%. A sum of omission of the electrically conductive particle and an aggregation of the electrically conductive particles is less than 25%.

SEMICONDUCTOR PACKAGES

A semiconductor package including a heat spreading layer having at least one hole, a first semiconductor chip below the heat spreading layer, a redistribution structure below the first semiconductor chip, a first mold layer between the heat spreading layer and the redistribution structure, a shielding wall extending from the redistribution structure and the heat spreading layer and surrounding the first semiconductor chip, and a first conductive pillar extending from the redistribution structure into the hole may be provided. 1. A semiconductor package comprising:a redistribution structure;a first semiconductor chip on the redistribution structure;a Copper layer on the first semiconductor chip;a first mold layer between the Copper layer and the redistribution structure;a shielding wall surrounding the first semiconductor chip;a plurality of conductive pillar around the shielding wall;a plurality of inter-package connection on the plurality of conductive pillar;a substrate on the plurality of inter-package connection;at least one second semiconductor chip on the substrate; anda second mold layer covering the at least one second semiconductor chip.2. The semiconductor package according to claim 1 , wherein a height of the first conductive pillar is greater than a height of the shielding wall.3. The semiconductor package according to claim 1 , wherein the shielding wall extends between the redistribution structure and the Copper layer.4. The semiconductor package according to claim 1 , wherein upper surfaces of the plurality of first conductive pillar are coplanar with an upper surface of the Copper layer.5. The semiconductor package according to claim 1 , further comprising:a plurality of second conductive pillar respectively extending from the redistribution structure to the first semiconductor chip.6. The semiconductor package according to claim 5 , wherein a lower surface of the shielding wall claim 5 , lower surfaces of the plurality of first conductive pillar ...

ANISOTROPIC CONDUCTIVE FILM AND MANUFACTURING METHOD THEREOF

An anisotropic conductive film includes a conductive particle array layer in which a plurality of conductive particles are arrayed in a prescribed manner and held in an insulating resin layer. The anisotropic conductive film has a direction in which a thickness distribution, around the individual conductive particle, of the insulating resin layer holding the array of the conductive particles is asymmetric with respect to the conductive particle. The direction in which the thickness distribution is asymmetric is aligned in the same direction in the plurality of conductive particles. When an electronic component is mounted using this anisotropic conductive film, short circuits and conductive failure can be reduced. 1. An anisotropic conductive film for connecting electronic components via an anisotropic conductive connection , the anisotropic conductive film comprising:a conductive particle array layer in which a plurality of conductive particles are arrayed in a prescribed manner and held in an insulating resin layer, whereinthe insulating resin layer comprises a resin that is present around an individual conductive particle,the resin has a decreasing distribution in which a resin amount decreases in area, the area extending at an incline towards the conductive particle in a direction from a first plane at one end of the conductive particle to a second plane at an opposite end of the conductive particle,an amount of the resin present at the first plane is larger than an amount of resin present at the second plane, andthe anisotropic conductive film is formed before connecting the electronic components via the anisotropic conductive connection.2. The anisotropic conductive film according to claim 1 , wherein in a cross section of the anisotropic conductive film when the anisotropic conductive film is cut in a thickness direction thereof passing through a center of the conductive particle claim 1 , along the direction in which a resin amount decreases claim 1 , an area ...

METHOD OF MANUFACTURING AN ELECTRONIC DEVICE

A method of manufacturing an electronic device comprising the steps of: preparing a substrate comprising an electrically conductive layer; applying a conductive paste on the electrically conductive layer; mounting an electrical component on the applied conductive paste; heating the conductive paste to bond the electrically conductive layer and the electrical component, wherein the conductive paste comprises 100 parts by weight of the metal powder, 5 to 20 parts by weight of a solvent, and 0.05 to 3 parts by weight of a polymer, wherein the polymer comprises a first polymer and a second polymer, wherein the molecular weight (Mw) of the first polymer is 5,000 to 95,000, and the molecular weight (Mw) of the second polymer is 100,000 to 300,000. 1. A method of manufacturing an electronic device comprising the steps of: preparing a substrate comprising an electrically conductive layer; applying a conductive paste on the electrically conductive layer; mounting an electrical component on the applied conductive paste; heating the conductive paste to bond the electrically conductive layer and the electrical component , wherein the conductive paste comprises 100 parts by weight of the metal powder , 5 to 20 parts by weight of a solvent , and 0.05 to 3 parts by weight of a polymer , wherein the polymer comprises a first polymer and a second polymer , wherein the molecular weight (Mw) of the first polymer is 5 ,000 to 95 ,000 , and the molecular weight (Mw) of the second polymer is 100 ,000 to 300 ,000.2. The method of claim 1 , wherein the electrical component is a semiconductor chip.3. The method of claim 1 , wherein the electrical component includes a plating layer selected from the group consisting of nickel claim 1 , gold claim 1 , and alloys thereof.4. The method of claim 1 , wherein the method further comprises the step of drying at 40 to 150° C. after applying the conductive paste on the electrically conductive layer and before mounting the electrical component on the ...

Power semiconductor device and manufacturing method for power semiconductor device

A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

Semiconductor device and a method of manufacturing thereof

A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad, and a second bonding pad on a top surface of the stacking structure, wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 μm; a carrier comprising a connecting surface; a third bonding pad and a fourth bonding pad on the connecting surface of the carrier; and a conductive connecting layer comprising a current conductive area between the first bonding pad and the third bonding pad and between the second bonding pad and the fourth bonding pad.

Thermal Bonding Sheet and Thermal Bonding Sheet with Dicing Tape

A thermal bonding sheet includes a layer, in which hardness of the layer after being heated at a heating rate of 1.5° C./sec from 80° C. to 300° C. under pressure of 10 MPa, and then held at 300° C. for 2.5 minutes is in a range of 1.5 GPa to 10 GPa in measurement using a nanoindenter.

ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY APPARATUS

The present invention discloses an array substrate, a method for fabricating the same, and a display apparatus. The array substrate is provided with a plurality of signal lines in a peripheral area, at least two adhesion layers of different thicknesses are provided at positions of each signal line where the signal lines are connected with a driving IC chip, and said adhesion layers are electrically connected via a conductive metal layer. The adhesion layer is designed to have at least two adhesion layers, instead of a single layer in the prior art. Two adhesion layers with different thicknesses are provided at a bonding position, and are connected via a conductive metal layer. Thus, it is possible to avoid the abnormity in bonding due to difference in thickness and offset between metal layers, thus reducing poor wiring due to abnormity in bonding and improving quality of products. 1. An array substrate , provided with a plurality of signal lines in a peripheral area , characterized in that , at least two adhesion layers of different thicknesses are provided at positions of each signal line where the signal lines are designed for connecting with a driving IC chip , and said adhesion layers are electrically connected via a conductive metal layer.2. The array substrate of claim 1 , characterized in that claim 1 , each adhesion layer is made from a metallic material.3. The array substrate of claim 1 , characterized in that claim 1 , two adhesion layers are provided claim 1 , one of the adhesion layers is formed in the same layer and made from the same material as a source/drain metal layer on the array substrate claim 1 , and the other adhesion layer is formed in the same layer and made from the same material as a gate electrode layer on the array substrate.4. The array substrate of claim 3 , characterized in that claim 3 , said conductive metal layer is formed in the same layer as a transparent conductive layer in said array substrate.5. The array substrate of claim 1 ...

Oscillator, electronic apparatus, and vehicle

An oscillator includes a resonation element, a temperature sensitive element, a first package that houses the resonation element and the temperature sensitive element and is airtightly sealed, and a second package that houses the first package and is airtightly sealed. The first package includes a first base having a first recessed portion that is provided on one main surface side and a first lid that is joined to the first base so as to close an opening of the first recessed portion. The second package includes a second base having a second recessed portion that is provided on one main surface side and a second lid that is joined to the second base so as to close an opening of the second recessed portion.

Anisotropic conductive film and connected structure

Anisotropic conductive films, each including an insulating adhesive layer and conductive particles insulating adhesive layer in a lattice-like manner. Among center distances between an arbitrary conductive particle and conductive particles adjacent to the conductive particle, the shortest distance to the conductive particle is a first center distance; the next shortest distance is a second center distance. These center distances are 1.5 to 5 times the conductive particles' diameter. The arbitrary conductive particle, conductive particle spaced apart from the conductive particle by the first center distance, conductive particle spaced apart from the conductive particle by first center distance or second center distance form an acute triangle. Regarding this acute triangle, an acute angle formed between a straight line orthogonal to a first array direction passing through the conductive particles and second array direction passing through conductive particles being 18 to 35□. These anisotropic conductive films have stable connection reliability in COG connection.

Sheet for sintering bonding and sheet for sintering bonding with base material

To provide a sheet for sintering bonding and a sheet for sintering bonding with a base material that are suited for properly supplying a material for sintering bonding to a face planned to be bonded of a bonding object. A sheet for sintering bonding 10 according to the present invention comprises an electrically conductive metal containing sinterable particle and a binder component. In the sheet for sintering bonding 10 , the shear strength at 23° C., F (MPa), measured in accordance with a SAICAS method and the minimum load, f (μN), which is reached during an unloading process in load-displacement measurement in accordance with a nanoindentation method, satisfy 0.1≤F/f≤1. A sheet body X, which is a sheet for sintering bonding with a base material according to the present invention, has a laminated structure comprising a base material B and the sheet for sintering bonding 10.

Sheet for sintering bonding, sheet for sintering bonding with base material, and semiconductor chip with layer of material for sintering bonding

A sheet for sintering bonding 10 of the present invention comprises an electrically conductive metal containing sinterable particle and a binder component, and upon subjecting the sheet to a pressurization treatment onto a silver plane of a 5 mm square Si chip under predetermined conditions, the ratio of the area of a layer of a material for sintering bonding transferred onto the silver plane to the silver plane area is 0.75 to 1. A sheet body X of the present invention has a laminated structure comprising a base material B and the sheet 10 . A semiconductor chip with a layer of a material for sintering bonding of the present invention comprises a semiconductor chip and a material layer derived from the sheet 10 on one face of the chip, and the ratio of the area of the material layer to the area of that face is 0.75 to 1.

Semiconductor device connected by anisotropic conductive film

A semiconductor device connected by an anisotropic conductive film. The anisotropic conductive film includes a composition for an anisotropic conductive film including a first epoxy resin having an exothermic peak temperature of about 80° C. to about 110° C. and a second epoxy resin having an exothermic peak temperature of 120° C. to 200° C., as measured by differential scanning calorimetry (DSC). The first epoxy resin and the second epoxy resin are present in combined amount of about 30 wt % to about 50 wt % based on a total weight of the composition in terms of solid content. The second epoxy resin is present in an amount of about 60 to about 90 parts by weight based on 100 parts by weight of the first and second epoxy resins.

ANISOTROPIC CONDUCTIVE FILM

An anisotropic conductive film has a structure in which high hardness conductive particles having a 20% compression elastic modulus of 8000 to 28000 N/mmand low hardness conductive particles having a lower 20% compression elastic modulus than that of the high hardness conductive particles are dispersed as conductive particles in an insulating resin layer. The number density of all the conductive particles is 6000 particles/mmor more, and the number density of the low hardness conductive particles is 10% or more of that of all the conductive particles. 1. An anisotropic conductive film comprising high hardness conductive particles having a 20% compression elastic modulus of 8000 to 28000 N/mmand low hardness conductive particles having a lower 20% compression elastic modulus than that of the high hardness conductive particles that are dispersed as conductive particles in an insulating resin layer , wherein a number density of all the conductive particles is 6000 particles/mmor more , and a number density of the low hardness conductive particles is 10% or more of that of all the conductive particles.2. The anisotropic conductive film according to claim 1 , wherein the 20% compression elastic modulus of the low hardness conductive particles is 10% or more and 70% or less of the 20% compression elastic modulus of the high hardness conductive particles.3. The anisotropic conductive film according to claim 1 , wherein the number density of the low hardness conductive particles is 20% or more and 80% or less of that of all the conductive particles.4. The anisotropic conductive film according to claim 1 , wherein an average particle diameter of all the conductive particles is less than 10 μm claim 1 , and the number density of all the conductive particles is 6000 particles/mmor more and 42000 particles/mmor less.5. The anisotropic conductive film according to claim 1 , wherein an average particle diameter of all the conductive particles is 10 μm or more claim 1 , and the ...

CONNECTION BODY, METHOD FOR MANUFACTURING A CONNECTION BODY, CONNECTING METHOD AND ANISOTROPIC CONDUCTIVE ADHESIVE AGENT

Ensure conduction between an electronic component and a circuit substrate having reduced pitches in wiring of the circuit substrate or electrodes of the electronic component and prevent short circuits between electrode terminals of the electronic component. A connection body including an electronic component connected to a circuit substrate via an anisotropic conductive adhesive agent containing conductive particles; wherein the conductive particles are regularly arranged; and wherein the conductive particles have a particle diameter that is ½ or less than a height of a connecting electrode of the electronic component. 1. A connection body comprising:an electronic component connected onto a circuit substrate via an anisotropic conductive adhesive agent;wherein the anisotropic conductive adhesive agent has conductive particles that are regularly arranged; andwherein the conductive particles have a particle diameter that is ½ or less than a height of a connecting electrode of the electronic component.2. The connection body according to claim 1 , wherein the conductive particles of the anisotropic conductive adhesive agent have a number density from 10 claim 1 ,000 to 60 claim 1 ,000/mm.3. The connection body according to claim 1 , wherein the conductive particles are arranged in a grid pattern.4. A method for manufacturing a connection body comprising:mounting an electronic component onto a circuit substrate via an adhesive agent containing conductive particles; andpressing the electronic component against the circuit substrate and curing the adhesive agent, thereby connecting the electronic component to the circuit substrate;wherein the anisotropic conductive adhesive agent has conductive particles that are regularly arranged; andwherein the conductive particles have a particle diameter that is ½ or less than a height of a connecting electrode of the electronic component.5. A connecting method comprising:mounting an electronic component onto a circuit substrate via ...

Metal sintering preparation and the use thereof for the connecting of components

A metal sintering preparation containing (A) 50 to 90% by weight of at least one metal that is present in the form of particles having a coating that contains at least one organic compound, and (B) 6 to 50% by weight organic solvent. The mathematical product of tamped density and specific surface of the metal particles of component (A) is in the range of 40,000 to 80,000 cm −1 .

Nanowires plated on nanoparticles

In some examples, a system comprises a set of nanoparticles and a set of nanowires extending from the set of nanoparticles.

ANISOTROPIC CONDUCTIVE FILM AND PRODUCTION METHOD OF THE SAME

An anisotropic conductive film having a multilayer structure having conductive particles arranged in a single layer has a first connection layer and a second connection layer formed on a surface of the first connection layer. The first connection layer is a photopolymerized resin layer, and the second connection layer is a thermally or photo-cationically, anionically, or radically polymerizable resin layer. On the surface of the first connection layer on a side of the second connection layer, the conductive particles for anisotropic conductive connection are arranged in a single layer, and the first connection layer contains an insulating filler. 1. An anisotropic conductive film having a first connection layer and a second connection layer formed on a surface of the first connection layer , whereinthe first connection layer is a photopolymerized resin layer,the second connection layer is a thermally or photo-cationically, anionically, or radically polymerizable resin layer,conductive particles for anisotropic conductive connection are arranged in a single layer on the surface of the first connection layer on a side of the second connection layer, andthe first connection layer contains an insulating filler.2. The anisotropic conductive film according to claim 1 , wherein the insulating filler has an average particle diameter of 5 nm or more and 500 nm or less.3. The anisotropic conductive film according to claim 1 , wherein the insulating filler has light scattering properties.4. The anisotropic conductive film according to any one of claim 1 , wherein the first connection layer is a photo-radically polymerized resin layer obtained by photo-radically polymerizing a photo-radically polymerizable resin layer containing an acrylate compound and a photo-radical polymerization initiator.5. The anisotropic conductive film according to any one of claim 1 , wherein the first connection layer further contains an epoxy compound and a thermal or photo-cationic or anionic ...

PIEZOELECTRIC VIBRATION COMPONENT AND APPLICATION METHOD

A piezoelectric vibration component that includes a piezoelectric vibrator, a substrate, and a conductive adhesive that bonds the piezoelectric vibrator to the substrate. The conductive adhesive contains a silicone-based base resin, a cross-linker, a conductive filler, and an insulating filler. The silicone-based base resin has a weight-average molecular weight of 20,000 to 102,000. The cross-linker has a number-average molecular weight of 1,950 to 4,620. The conductive filler and the insulating filler have a particle size of 10 μm or less. 1. A piezoelectric vibration component comprising:a piezoelectric vibrator;a substrate; anda conductive adhesive that bonds the piezoelectric vibrator to the substrate,wherein the conductive adhesive contains a silicone-based base resin, a cross-linker, a conductive filler, and an insulating filler,the silicone-based base resin has a weight-average molecular weight of 20,000 to 102,000,the cross-linker has a number-average molecular weight of 1,950 to 4,620, andthe conductive filler and the insulating filler have a particle size of 10 μm or less.2. The piezoelectric vibration component according to claim 1 , wherein the weight-average molecular weight of the silicone-based base resin is 30 claim 1 ,000 to 80 claim 1 ,000.3. The piezoelectric vibration component according to claim 1 , wherein the weight-average molecular weight of the silicone-based base resin is 43 claim 1 ,000 to 72 claim 1 ,000.4. The piezoelectric vibration component according to claim 1 , wherein the silicone-based base resin has a structure containing an inorganic siloxane bond serving as a main chain and an organic group serving as a side chain attached to the main chain.5. The piezoelectric vibration component according to claim 1 , wherein a first median size of the conductive filler is smaller than a second median size of the insulating filler.6. The piezoelectric vibration component according to claim 1 , wherein the conductive filler includes metal ...

Die Attach Methods and Semiconductor Devices Manufactured based on Such Methods

A method includes providing a carrier, depositing a die attach material on the carrier, and arranging a semiconductor die on the die attach material, wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material, wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers. 1. A method , comprising:providing a carrier;depositing a die attach material on the carrier; andarranging a semiconductor die on the die attach material,wherein a main surface of the semiconductor die facing the die attach material at least partly contacts the die attach material,wherein immediately after arranging the semiconductor die on the die attach material, a first maximum extension of the die attach material over edges of the main surface is less than about 100 micrometers.2. The method of claim 1 , further comprising:forming a fillet of the die attach material at a side surface of the semiconductor die, wherein forming the fillet is based on a creeping of the die attach material along the side surface of the semiconductor die.3. The method of claim 2 , wherein the creeping of the die attach material is based on an adhesive force between the die attach material and the semiconductor die.4. The method of one of claim 1 , further comprising:after arranging the semiconductor die on the die attach material, further extending the die attach material over the edges of the main surface,wherein a second maximum extension of the die attach material over the edges of the main surface is less than about 200 micrometers.5. The method of claim 1 , further comprising:curing the die attach material at a curing time in a range from about 10 minutes to about 3 hours and a curing temperature in a range from about 100 degrees Celsius to about 300 degrees Celsius.6. The method of claim 1 , wherein a ...

Semiconductor Packages and Methods of Fabrication Thereof

In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad. 1. A semiconductor device comprising:a conductive substrate;a first semiconductor chip disposed over the conductive substrate, the first semiconductor chip having a first side and an opposite second side;a first chip contact pad disposed on the first side of the first semiconductor chip;a second chip contact pad disposed on the second side of the second semiconductor chip, the second chip contact pad facing the conductive substrate;a dielectric liner disposed over the first semiconductor chip, the dielectric liner comprising a plurality of first openings over the first chip contact pad;an encapsulant disposed around the first semiconductor chip; anda first interconnect contacting the first semiconductor chip through the plurality of first openings at the first chip contact pad, the first interconnect disposed in the encapsulant.2. The device of claim 1 , further comprising:a third chip contact pad disposed on the first side of the first semiconductor chip;a plurality of second openings disposed in the dielectric liner over the third chip contact pad; anda second interconnect contacting the first semiconductor chip through the plurality of second openings at the third chip contact pad.3. The device of claim 1 , further comprising:a second semiconductor chip, the second semiconductor chip having a first side and an opposite second side;a third chip contact pad disposed on the first side of the second semiconductor chip, wherein the dielectric liner is disposed over the second chip, and ...

Metal paste with oxidation agents

The present invention relates to a sintering method which allows joining components in a stable manner, wherein the process temperature is below 200 °C and stable contact points occur which have a low porosity and a high electrical and thermal conductivity. The invention relates to a method for joining components, in which (a) a sandwich arrangement is provided, which comprises at least (a1) a component (1), (a2) a component (2) and (a3) a metal paste situated between component (1) and component (2), and in which (b) the sandwich arrangement is sintered. The invention is characterized in that the metal paste comprises (A) 75-90 % by weight of at least one metal, which is present in the form of particles having a coating, containing at least one organic compound; (B) 0-12 % by weight of at least one metal precursor; (C) 6-20 % by weight of at least one solvent; and (D) 0.1-15 % by weight of at least one auxiliary sintering agent which is selected from the group consisting of (i) organic peroxides, (ii) inorganic peroxides, and (iii) inorganic acids.

Anisotropic conductive film and display device connected by the same

본 발명은 중량 평균 분자량이 5,000 g/mol 내지 50,000 g/mol인 폴리우레탄 (메트)아크릴레이트, 중량 평균 분자량이 70,000 g/mol 내지 150,000 g/mol인 우레탄 수지, 라디칼 중합성 물질, 라디칼 중합 개시제 및 도전 입자를 포함하는 이방 도전성 필름 및 상기 이방 도전성 필름에 의해 접속된 디스플레이 장치에 관한 것이다. The present invention relates to a polyurethane (meth) acrylate having a weight average molecular weight of 5,000 g / mol to 50,000 g / mol, a urethane resin having a weight average molecular weight of 70,000 g / mol to 150,000 g / mol, a radical polymerizable material, And an anisotropic conductive film containing conductive particles and a display device connected by the anisotropic conductive film.

Production of contact joint between semiconductor chip and substrate comprises applying hardenable conducting adhesive on contact surfaces of substrate and chip, joining, and hardening adhesive to form contact joint

The production of a contact joint between a semiconductor chip (C1) and a substrate (MB) comprises preparing a substrate having a first contact surface (MK); preparing the chip having a second contact surface (L1); applying a hardenable conducting adhesive on the first contact surface and/or the second contact surface; joining the contact surfaces; and hardening the adhesive to form the contact joint. The adhesive comprises a matrix (K), a filler (F), a hardener and a decomposable component which decomposes either thermally or by irradiation. Preferred Features: The contact surfaces are mechanically separated, the chip removed and a further chip placed on its site through a corresponding contact joint. The filler is made from silver, nickel, gold, copper, aluminum, platinum, silicon or metal-coated particles.

Adhesive tape and method of using the same

Proposed herein is an adhesive tape comprising an energy beam transmittable base sheet having a surface tension of not more than 40 dyne/cm and an adhesive layer formed on one surface of the base sheet, the adhesive layer comprising a (meth)acrylate polymer, an epoxy resin, a photopolymerizable low molecular weight compound, a heat activatable potential curing agent for the epoxy resin and a photopolymerization initiator for the photopolymerizable low molecular weight compound. The adhesive in the adhesive layer is curable with energy beam and the so cured adhesive develops tackiness again when heated. When the tape is used in processing a semiconductor wafer, it serves as a dicing tape for holding the wafer in position during the dicing step. Each piece of the diced and cured adhesive layer, that is attached to each chip and capable of being tackified by heating, provides an adhesive required for securely mounting the chip on the lead frame in the die-bonding step.

B-stageable die attach adhesives

The present invention relates to b-stageable die attach adhesives, methods of preparing such adhesives, methods of applying such adhesives to the die and other substrate surfaces, and assemblies prepared therewith for connecting microelectronic circuitry.

Paste for circuit connection, anisotropic conductive paste and uses thereof

본 발명은, 저장 안정성 및 분배자 도포 작업성이 뛰어나고, 열압착시의 공동, 혹은 기포나 배어나옴의 발생이 없고, 그 경화물은, 고온 고습시에 있어서도 접착 신뢰성 및 접속 신뢰성이 높고, 또한 리페어성도 높은 회로 접속용 페이스트 및 이방성 도전 페이스트, 그리고, 이들 페이스트의 사용방법을 제공한다. This invention is excellent in storage stability and distributor coating workability, and there is no generation | occurrence | production of a cavity, a bubble, or bleeding at the time of thermocompression bonding, The hardened | cured material has high adhesive reliability and connection reliability also at the time of high temperature, high humidity, Provided are circuit repair pastes having high repair properties, anisotropic conductive pastes, and methods of using these pastes. 본 발명의 회로 접속용 페이스트는, The paste for circuit connection of this invention, (I) 에폭시 수지 30 내지 80질량%, (I) 30-80 mass% of epoxy resins, (II) 산무수물계 경화제 혹은 페놀계 경화제 10 내지 50질량% 및 (II) 10-50 mass% of acid anhydride type hardeners or phenolic hardeners, and (III) 고연화점 미립자 5 내지 25질량%를 포함하는 것을 특징으로 한다. (III) It contains 5-25 mass% of high softening point fine particles, It is characterized by the above-mentioned. 또, 본 발명의 이방성 도전 페이스트는, In addition, the anisotropic conductive paste of the present invention, (I) 에폭시 수지 30 내지 80질량%, (I) 30-80 mass% of epoxy resins, (II) 산무수물계 경화제 혹은 페놀계 경화제 10 내지 50질량%, (II) 10-50 mass% of acid anhydride type hardeners or phenol type hardeners, (III) 고연화점 미립자 5 내지 25질량% 및 (III) 5 to 25 mass% of high softening point fine particles and (IV) 도전성 입자 0.1 내지 25질량%를 포함하는 것을 특징으로 한다. (IV) 0.1-25 mass% of electroconductive particle is contained, It is characterized by the above-mentioned. 상기 회로접속용 페이스트 혹은 이방성 도전 페이스트를 사용하는 방법은, 본 발명의 상기 회로접속용 페이스트 혹은 이방성 도전 페이스트에 의해서, 한쪽의 기판상에 형성된 전기회로배선과, 다른 쪽의 기판상에 형성된 전기회로배선을 접속하는 것을 특징으로 한다. The method of using the circuit connection paste or anisotropic conductive paste includes an electric circuit wiring formed on one substrate and an electric circuit formed on the other substrate by the circuit connection paste or anisotropic conductive paste of the present invention. It ...

Adhesive for semiconductor part

An adhesive for semiconductor parts, comprising, as a base polymer, at least one cyclic structure-containing thermoplastic polymer selected from the group consisting of (a) a cycloolefin polymer and (b) an aromatic-condensed polymer having a repeating unit of an aromatic ring in its main chain, and having a number average molecular weight of 1,000 to 500,000, an adhesive sheet formed of the adhesive, a semiconductor part package making use of the adhesive, and a production process of the package.

Anisotropic conductive film, method for producing anisotropic conductive film, method for producing connection body, and connection method

본 발명은 이방성 도전 필름을 사용한 접속에 있어서, 접속 후의 기판 휨의 저감을 도모하는 것을 목적으로 한다. 이방성 도전 필름(23)은 제1 절연성 접착제층(30)과, 제2 절연성 접착제층(31)과, 제1 절연성 접착제층(30) 및 제2 절연성 접착제층(31)에 끼움 지지되고, 도전성 입자(32)가 절연성 접착제(33)에 함유된 도전성 입자 함유층(34)을 갖고, 도전성 입자 함유층(34)과 제1 절연성 접착제층(30) 사이에 기포(41)가 함유되고, 도전성 입자 함유층(34)은 제2 절연성 접착제층(31)과 접하는, 도전성 입자(32)의 하부의 경화도가 다른 부위의 경화도보다도 낮은 것이다. This invention aims at reducing the board curvature after a connection in the connection using an anisotropic conductive film. The anisotropic conductive film 23 is sandwiched between the first insulating adhesive layer 30, the second insulating adhesive layer 31, the first insulating adhesive layer 30 and the second insulating adhesive layer 31, and is electrically conductive. The particle 32 has the electroconductive particle containing layer 34 contained in the insulating adhesive 33, the bubble 41 is contained between the electroconductive particle containing layer 34 and the 1st insulating adhesive layer 30, and an electroconductive particle containing layer Reference numeral 34 has a lower degree of curing of the lower portion of the conductive particles 32 in contact with the second insulating adhesive layer 31 than that of other portions.

A composition for use of an anisotropic conductive film and anisotropic conductive film using the same

본 발명은 고분자 바인더부로 에폭시 관능기를 포함하는 아크릴산 에스테르 공중합체를 포함하고 경화부로 반응성이 빠르고 경화 후 견고한 구조를 형성하는 아크릴레이트를 포함하며 상기 고분자 바인더부와 상기 경화부의 고형 함량비를 40 내지 60 대 40 내지 60이 되게 함으로써, 에폭시계 조성의 필름에서 구현할 수 없는 160 내지 200℃에서 5초 이하의 접속시간에서 버블이 발생하지 않을 뿐 아니라 접착력, 접속신뢰성 및 치수안정성이 높은 이방 전도성 접착 필름을 제공한다. The present invention includes an acrylic ester copolymer containing an epoxy functional group as a polymer binder portion, and includes an acrylate which forms a rigid structure after curing with rapid reactivity as a curing portion, and the solid content ratio of the polymeric binder portion and the curing portion is 40 to 60. By using a ratio of 40 to 60, bubbles are not generated at a connection time of 5 seconds or less at 160 to 200 ° C, which cannot be realized in an epoxy-based film, and an anisotropic conductive adhesive film having high adhesion, connection reliability, and dimensional stability is obtained. to provide.

이방성 도전 필름 및 이를 포함하는 반도체 장치

본원 발명은 내열성 및 내습성이 우수하여 고온 및 고습 조건하에서도 접속 신뢰성이 우수한 이방성 도전 필름에 관한 것이다. 구체적으로, 본원 발명은 내열성 및/또는 내습성이 높고 경화 시 용융 점도가 상이한 나프탈렌 고리 함유 에폭시 수지 및 디사이클로 펜타디엔 고리 함유 에폭시 수지를 특정 함량비로 함께 함유함으로써, 본압착 시 미세 전극 간에 충진이 고르게 이루어져 접속 신뢰성이 우수한 이방성 도전 필름에 관한 것이다.

소결 재료 및 이를 이용한 부착 방법

멀티칩 및 단일 컴퍼넌트의 다이 부착 방법은 다이의 이면 또는 기판 상에 소결 페이스트를 인쇄하는 것을 포함할 수 있다. 인쇄는 스텐실 인쇄, 스크린 인쇄 또는 디스펜싱 공정을 포함할 수 있다. 페이스트는 다이싱 전에 전체 웨이퍼의 이면 상이나, 각각의 다이의 이면 상에 인쇄될 수 있다. 또한, 소결막은 제조되어 웨이퍼, 다이 또는 기판에 전사될 수 있다. 후소결 단계는 스루풋을 증가시킬 수 있다.

电路连接用糊剂、各向异性导电糊剂以及它们的应用

本发明提供具有良好储存稳定性、分配器涂覆性能和可修补性的电路连接用糊剂和各向异性导电糊剂，其热压粘结时可以无空隙、气泡和渗色，并可得高温和高湿下有高粘结强度和连接可靠性的固化产物。电路连接用糊剂含：30～80质量％的环氧树脂，10～50质量％选自酸酐固化剂和酚类固化剂中的固化剂和5～25质量％高软化点的精细粒子。各向异性导电糊剂含：30～80质量％的环氧树脂，10～50质量％选自酸酐固化剂和酚类固化剂中的固化剂，5～25质量％高软化点的精细粒子和0.1～25质量％的导电粒子。这些糊剂的用法包括，以本发明的电路连接用糊剂或各向异性导电糊剂，将在基体上形成的电路布线与在另一基体上形成的电路布线连接起来。

A composition for use of an anisotropic conductive film causing no harmfulness to human body, an anisotropic conductive film, and a display device connected by the film

본 발명은 바인더부, 경화부, 라우릴 퍼옥시드 및 큐멘 히드로퍼옥시드 중 1종 이상 선택된 라디칼 반응 개시제, 도전성 입자, 및 한센 용해도 파라미터(Hansen Solubility Parameter)가 17 내지 20인 용매를 포함하는 이방 도전성 필름용 조성물, 이방 도전성 필름 및 상기 필름에 의해 접속된 디스플레이 장치에 관한 것이다. The present invention relates to an anisotropic conductive adhesive composition comprising a binder portion, a hardened portion, a radical reaction initiator selected from at least one of lauryl peroxide and cumene hydroperoxide, a conductive particle, and a solvent having a Hansen Solubility Parameter of 17 to 20 A composition for a film, an anisotropic conductive film, and a display device connected by the film.

경화 필름과 도전 필름을 포함하는 분리형 이방 도전성 필름

본 발명은 경화 필름과 도전 필름을 포함하고, 상기 경화 필름은 상기 도전 필름과 결합되지 않은 상태에서 제1 회로 단자를 포함하는 제1 접속부재에 부착되고, 상기 도전 필름은 상기 경화 필름과 결합되지 않은 상태에서 제2 회로 단자를 포함하는 제2 접속부재에 부착되는 이방 도전성 필름에 관한 것이다.

소결 재료 및 이를 이용한 부착 방법

멀티칩 및 단일 컴퍼넌트의 다이 부착 방법은 다이의 이면 또는 기판 상에 소결 페이스트를 인쇄하는 것을 포함할 수 있다. 인쇄는 스텐실 인쇄, 스크린 인쇄 또는 디스펜싱 공정을 포함할 수 있다. 페이스트는 다이싱 전에 전체 웨이퍼의 이면 상이나, 각각의 다이의 이면 상에 인쇄될 수 있다. 또한, 소결막은 제조되어 웨이퍼, 다이 또는 기판에 전사될 수 있다. 후소결 단계는 스루풋을 증가시킬 수 있다.

粘接膜、以及电路部件的连接结构和连接方法

本发明提供一种粘接膜，该粘接膜层叠有含有导电粒子的导电性粘接层和绝缘性粘接层，在层叠方向上以规定的条件进行加热加压后的、固化了的绝缘性粘接层的主面的面积C，除以固化了的导电性粘接层的主面的面积D的值即C/D为1.2～3.0。

Display module and method for manufacturing thereof

디스플레이 모듈 및 그 제조 방법이 개시된다. 본 디스플레이 모듈은 패드를 포함하는 기판, 상기 패드를 포함하는 기판 상에 접합되고, 표면 및 내부 중 적어도 하나가 블랙 컬러로 처리된 도전 필름 및 상기 도전 필름이 접합된 패드에 실장되는 디스플레이 소자를 포함한다.

異方性導電フィルム

【課題】狭ピッチのバンプに対応することができ、かつ導電粒子の個数密度を低減させることのできる異方性導電フィルムを提供する。 【解決手段】 絶縁性樹脂バインダ３に導電粒子２が配置された異方性導電フィルム１Ａであって、導電粒子２が間隔をあけて一列に並んだ導電粒子列２ｐ、２ｑ、２ｒであって導電粒子数の異なるものが並列してなる導電粒子の繰り返しユニット５が異方性導電フィルムの全面にわたり繰り返し配置されている。 【選択図】図１Ａ

Anisotropic conductive adhesive compositions and anisotropic conductive films using them

본 발명은 열경화성 라디칼 중합성 물질로 테트라하이드로퍼푸릴계 (메트)아크릴레이트 혹은 퍼푸릴계 (메트)아크릴레이트, 및 열경화성 중합 개시제를 포함하며, 상기 테트라하이드로퍼푸릴계 (메트)아크릴레이트 혹은 퍼푸릴계 (메트)아크릴레이트가 이방 전도성 접착 조성물의 전체 고형 중량을 기준으로 1 내지 25 중량% 포함된 이방 전도성 접착 조성물 혹은 필름에 관한 것이다. (Meth) acrylate or a perfluoro (meth) acrylate, and a thermosetting polymerization initiator as the thermosetting radically polymerizable material, wherein the tetrahydroperfuryl (meth) acrylate or perfluoro (Meth) acrylate is contained in an amount of 1 to 25% by weight based on the total solid weight of the anisotropic conductive adhesive composition.

金属粒子膏糊、使用了其的固化物及半导体装置

根据本发明，可提供含有极性溶剂、和分散在上述极性溶剂中且包含第一金属的粒子的金属粒子膏糊。在上述极性溶剂中，溶解有与上述第一金属不同的第二金属。本发明还提供了使用了该金属粒子膏糊的固化物及半导体装置。

도전 재료, 접속 구조체 및 접속 구조체의 제조 방법

도전 재료가 일정 기간 방치된 경우에도, 전극 상에 도전성 입자에 있어서의 땜납을 효율적으로 배치할 수 있고, 또한 가열 시에 도전 재료의 황변을 충분히 억제할 수 있는 도전 재료를 제공한다. 본 발명에 따른 도전 재료는, 도전부의 외표면 부분에 땜납을 갖는 복수의 도전성 입자와, 경화성 화합물과, 3불화붕소 착체를 포함한다.