Устройство для иммерсионного двухфазного охлаждения изделий электронной техники

Полезная модель относится к области электротехники, а именно к устройствам для охлаждения электронных изделий на основе принципа перехода фаз посредством их полного погружения в хладагент, представляющий собой диэлектрическую жидкость или смесь диэлектрических жидкостей с разной температурой кипения. Технический результат заключается в улучшении охлаждения за счет обеспечения неотрицательного знака градиента температуры хладагента во всех точках вертикальных сечений резервуара. Устройство для иммерсионного двухфазного охлаждения изделий состоит из герметичного резервуара, частично заполненного хладагентом, снабженного крышкой. Внутри резервуара параллельно одной из торцевых стенок резервуара установлена перегородка с образованием первой и второй камер. Во второй камере выполнены направляющие для установки изделий электронной техники. Верхняя кромка перегородки не доходит до крышки резервуара, но находится выше уровня хладагента. Нижняя кромка перегородки выполнена с выемкой, обеспечивающей ...

Приемно-передающий модуль АФАР с теплоотводящим основанием в виде плоской тепловой трубки

Устройство относится к области радиолокационной техники и может быть использовано при проектировании и изготовлении активной фазированной антенной решетки (АФАР). Технический результат заключается в возможности эффективного отведения тепла от активных СВЧ-элементов приемо-передающих модулей (ППМ) АФАР и его распределении по корпусу ППМ для дальнейшей передачи в систему охлаждения второй ступени жидкостного или воздушного типа, за счет установки ТТ непосредственно под радиоэлектронную ячейку и закрепления на ее поверхности тепловыделяющих радиоэлектронных элементов при помощи низкотемпературной пайки ППМ АФАР (фиг. 1), содержащий корпус 1, который в свою очередь содержит закрепленную внутри корпуса радиоэлектронную ячейку в виде печатной платы 2 с радиоэлектронными элементами 3. Непосредственно под плату устанавливается плоская ТТ 4. Соединение наиболее эффективных теплонагруженных СВЧ-устройств 5 с ТТ осуществляется напрямую посредством пайки с низкотемпературным припоем, тем самым обеспечивая ...

АЛМАЗНЫЙ ТЕПЛООТВОД

Изобретение относится к твердотельной электронике, в частности к теплоотводам полупроводниковых приборов повышенной мощности, а также может быть использовано в различных теплотехнических устройствах, работающих с большими удельными тепловыми нагрузками. Техническим результатом изобретения является повышение отводимой мощности от локального источника тепла. Алмазный теплоотвод выполнен в виде слоистой структуры из алмазных пластин, при этом толщина слоистой структуры больше минимального вдоль поверхности структуры размера локального источника тепла. 6 з.п. ф-лы, 4 ил.

ТЕПЛОПРОВОДНЫЙ ИЗОЛЯТОР

Использование: для создания теплопроводного изолятора. Сущность изобретения заключается в том, что теплопроводный изолятор имеет первую деталь, имеющую первые пластинки, которые расположены на по меньшей мере одной поверхности первой детали, и вторую деталь, имеющую вторые пластинки, которые расположены на по меньшей мере одной поверхности второй детали, при этом первые пластинки и вторые пластинки расположены, будучи вставленными друг в друга, при этом между первой деталью и второй деталью по меньшей мере в области пластинок расположен изоляционный слой. Технический результат: обеспечение возможности улучшения способности проводить тепло. 2 н. и 5 з.п. ф-лы, 3 ил.

Корпус полупроводникового прибора из металломатричного композита и способ его изготовления

Изобретение относится к области конструирования полупроводниковых приборов. Композитный корпус полупроводникового прибора состоит из металла, например алюминия, с концентрацией в общей массе в смеси от 15 до 60% и частиц порошка карбида кремния, при этом частицы карбида кремния в смеси двух типов: размером от 70 до 200 мкм и размером от 20 до 40 мкм, в отношении 3:1, где 3 части частиц - частицы размером от 70 до 200 мкм и 1 часть частиц - размером от 20 до 40 мкм, а материал корпуса обладает сходным, с подложкой СВЧ транзистора на основе карбида кремния, коэффициентом термического расширения. Также предложен способ изготовления композитного корпуса полупроводникового прибора. Технический результат изобретения заключается в оптимизации технологии изготовления корпуса с металлизацией металломатричного композита, которая позволяет избежать растрава поверхности, а также получение прочного спая в местах монтажа кристалла на поверхности корпуса, интенсификации теплоотвода корпуса и, как следствие ...

МОНТАЖНЫЙ КОРПУС ЭЛЕКТРИЧЕСКОГО ЭЛЕМЕНТА, МАТРИЧНЫЙ КОРПУС И ЭЛЕКТРИЧЕСКОЕ УСТРОЙСТВО

Halbleitervorrichtung, Verfahren zu deren Herstellung, und Leistungswandler

Eine Halbleitervorrichtung 100 umfasst eine Metallgrundplatte 1P, eine Gehäusekomponente 2, und eine Metallkomponente 3P. Die Metallkomponente 3P ist an der Gehäusekomponente 2 befestigt. Eine Teilregion der Metallkomponente 3P ist von der Gehäusekomponente 2 freigelegt. Die Teilregion ist mit der Grundplatte 1P in einem Verbindungsabschnitt 13P verbunden. Im Verbindungsabschnitt 13P stehen eine Fläche der Teilregion und eine Fläche der Grundplatte 1P in direktem Kontakt miteinander und sind integriert.

Halbleitermodulanordnung und Verfahren zur Montage eines Halbleitermoduls an einem Kühlkörper

Halbeitermodulanordnung umfassend:ein Halbleitermodul (10) das eine Unterseite (10b) mit einer Wärmeableitfläche (11) aufweist, sowie eine der Unterseite (10b) entgegengesetzte Oberseite (10t), die in einer vertikalen Richtung (v) von der Unterseite (10b) beabstandet ist;ein Wärmeübertragungsmaterial (50), das strukturiert oder unstrukturiert auf die Wärmeableitfläche (11) aufgebracht ist; undeinen Schutzdeckel (20), der derart unverlierbar an dem Halbleitermodul (10) montiert ist, dass im montierten Zustanddie Oberseite (10t) frei liegt und der Schutzdeckel (20) die Wärmeableitfläche (11) überdeckt; undder Schutzdeckel (20) mit dem Halbleitermodul (10) verrastet oder verklebt und dadurch unverlierbar an dem Halbleitermodul (10) montiert ist und von dem Wärmeübertragungsmaterial (50) beabstandet ist und dieses nicht berührt.

Halbleitervorrichtung und Verfahren zu deren Herstellung

Halbleitervorrichtung, aufweisend:ein Halbleitermodul (14) aufweisend einen wärmeleitenden Abschnitt (16) aus Metall und auch aufweisend ein gegossenes Harz (18), das eine Oberfläche aufweist, an der der wärmeleitende Abschnitt (16) freiliegt;einen Kühlkörper (12), der an dem gegossenen Harz (18) mittels eines Bondmaterials (20) befestigt ist; undein Hitzeleitfähigkeitsmaterial (22), das zwischen dem wärmeleitenden Abschnitt (16) und dem Kühlkörper (12) gebildet ist und diese thermisch miteinander koppelt, wobeider Kühlkörper (12) eine Kühlkörpernut (12a), die darin gebildet ist, aufweist, und wobeidas Hitzeleitfähigkeitsmaterial (22) von dem Bondmaterial (30) mittels der Kühlkörpernut (12a) getrennt ist.

Leistungsmodul

Ein Leistungsmodul ist so aufgebaut, dass ein Leistungsvorrichtungschip (5) innerhalb eines äußeren Gehäuses (1) angeordnet ist und eine Elektrode des Leistungsvorrichtungschips (5) mit einer externen Elektrode (10a) verbunden ist, die in dem äußeren Gehäuse (1) integriert ist. Das Leistungsmodul enthält: einen Wärmeverteiler (3), der in dem äußeren Gehäuse (1) befestigt ist, den Leistungsvorrichtungschip (5), der mit Lot auf den Wärmeverteiler (3) gebondet ist, einen isolierenden Damm (4), der auf dem Wärmeverteiler (3) so gebildet ist, dass er den Leistungsvorrichtungschip (5) umgibt, und eine interne Hauptelektrode (7), deren eines Ende mit Lot auf die Elektrode des Leistungsvorrichtungschips (5) gebondet ist und deren anderes Ende an einer oberen Oberfläche des Dammes befestigt ist. Die externe Elektrode (10a) und das andere Ende der internen Hauptelektrode (7) sind durch Drahtbonden elektrisch miteinander verbunden.

HALBLEITERANORDNUNG UND VERFAHREN ZU IHRER HERSTELLUNG

Wärmesenke

HALBLEITERVORRICHTUNG

In einer Halbleitervorrichtung (100), ist eine Wärmeabführungsplatte (2) innerhalb eines Dichtungsharzes (8) eingeschlossen und abgedichtet. Ein Isolierflächenkörper (3) ist derart montiert, dass er in Kontakt mit einer Hauptfläche der Wärmeabführungsplatte (2) innerhalb des Dichtungsharzes (8) steht. Ein Leiterrahmen (4) erstreckt sich von dem Inneren des Dichtungsharzes (8) zu der Außenseite bzw. der äußeren Umgebung des Dichtungsharzes (8), und ist derart angeordnet, dass er in Kontakt mit einer Hauptfläche des Isolierflächenkörpers (3) steht, die der Wärmeabführungsplatte (2) gegenüberliegt. Ein Halbleiterelement (1) ist mit zumindest einem Bereich einer Hauptfläche des Leiterrahmens (4) verbunden, die dem Isolierflächenkörper (3) innerhalb des Dichtungsharzes (8) gegenüberliegt. Die Fläche des Isolierflächenkörpers (3), die in Kontakt mit dem Leiterrahmen (4) steht, ist geneigt und derart abgesenkt, dass sie sich weg von dem Leiterrahmen (4) in einer Endregion erstreckt, die zumindest ...

Halbleiter-Leistungsmodul

Ein Halbleiter-Leistungsmodul beinhaltet: ein isolierendes Substrat, das eine Oberfläche und eine weitere Oberfläche aufweist, ein ausgangsseitiges Terminal, das an einer Oberflächenseite des isolierenden Substrates angeordnet ist, ein erstes Leistungsversorgungs-Terminal, das an der einen Oberflächenseite des isolierenden Substrates angeordnet ist, ein zweites Leistungsversorgungs-Terminal, an das eine Spannung mit einer Größe anzulegen ist, die gegenüber einer Spannung unterschiedlich ist, die an das erste Leistungsversorgungs-Terminal angelegt wird, wobei das zweite Leistungsversorgungs-Terminal an einer anderen Oberflächenseite des isolierenden Substrates angeordnet ist, so, dass es dem ersten Leistungsversorgungs-Terminal über das isolierende Substrat gegenüberliegt, ein erstes Schaltbauteil, das an der einen Oberflächenseite des isolierenden Substrates angeordnet ist und das elektrisch mit dem ausgangsseitigen Terminal und dem ersten Leistungsversorgungs-Terminal verbunden ist, und ...

Elektronisches Modul und Leistungsmodul

Das Abschälen einer Schicht in einem elektronischen Modul wird erfasst. Ein elektronisches Modul (1) nach der vorliegenden Erfindung weist Folgendes auf: einen bestimmten Leiter (CE1), eine Isolierschicht (IL3), eine Verdrahtungsschicht (WL2) und einen Kapazitäts-Spannungs-Wandler. Die Verdrahtungsschicht (WL2) weist eine Fühlerelektrode (E16) auf. Der Kapazitäts-Spannungs-Wandler ist mit der Fühlerelektrode (E16) verbunden. Die Fühlerelektrode (E16) steht über die Isolierschicht (IL3) einem Bereich des bestimmten Leiters (CE1) gegenüber und bildet mit dem Bereich eine Kapazität. Der Kapazitäts-Spannungs-Wandler ist ausgebildet, um eine Spannung entsprechend der Kapazität auszugeben.

BRÜCKE FÜR RADIOFREQUENZ- (RF) MULTI-CHIP-MODULE

Ausführungsbeispiele können sich auf ein Radiofrequenz- (RF) Multi-Chip-Modul beziehen, das einen ersten RF-Die und einen zweiten RF-Die umfasst. Der erste und zweite RF-Die können mit einem Package-Substrat an einer inaktiven Seite des jeweiligen Dies gekoppelt sein. Eine Brücke kann mit einer aktiven Seite des ersten und zweiten RF-Dies gekoppelt sein, sodass der erste und zweite RF-Die kommunikativ durch die Brücke gekoppelt sind und sodass sich der erste und zweite RF-Die zumindest teilweise zwischen dem Package-Substrat und der Brücke befinden. Andere Ausführungsbeispiele können beschrieben oder beansprucht sein.

Halbleitermodul, Halbleitervorrichtung und Fahrzeug

Eine Basisplatte (1) weist eine fixierte Oberfläche und eine abstrahlende Oberfläche, die eine der fixierten Oberfläche gegenüberliegende Oberfläche ist, auf. Ein isolierendes Substrat (3) ist mit der fixierten Oberfläche der Basisplatte (1) verbunden. Leitfähige Muster (4, 5) sind auf dem isolierenden Substrat (3) vorgesehen. Halbleiter-Chips (7, 8) sind mit dem leitfähigen Muster (4) verbunden. Ein Al-Draht (12) verbindet obere Oberflächen des Halbleiter-Chips (8) mit dem leitfähigen Muster (5). Das isolierende Substrat (3), die leitfähigen Muster (4, 5), die Halbleiter-Chips (7 bis 10) und die Al-Drähte (11 bis 13) sind mit einem Harz (16) eingeschlossen. Die Basisplatte (1) weist ein Metallteil (19) und ein verstärkendes Teil (20), das in dem Metallteil (19) vorgesehen ist, auf. Ein Youngscher Modul des verstärkenden Teils (20) ist größer als ein Youngscher Modul des Metallteils (19).

Verfahren zur Herstellung eines Halbleiterbauelementes und nach diesem Verfahren hergestelltes Halbleiterbauelement

IMPATT DIODE

Electronic circuit arrangement has circuit supporting plate and cooling agent passage has heat sink which is coupled thermally with flat side

The circuit arrangement (10) has circuit supporting plate (12) for the wiring of components (20) of the circuit arrangement. The flat side (22) borders directly on the cooling agent passage (24).The cooling agent passage has a heat sink (26) and is coupled thermally with the flat side. The flat side at the cooling agent passage is formed of a metallic layer, in particular copper layer.

Method for cooling glow plug control device in motor car, involves connecting heat shunt with heat sink such that forced convection occurs for outward dissipation of heat by heat sink from housing using heat shunt

The method involves connecting an electronic part (3) i.e. power semiconductor, with a heat sink (5) by a thermal line (4) such that heat is dissipated from the electronic part to the heat sink over the thermal line, where the electronic part is arranged in a housing (2) of a glow plug control device (1). The thermal line is connected with the heat sink for cooling the electronic part. A heat shunt (6) is connected with the heat sink such that forced convection occurs for outward dissipation of heat by the heat sink from the housing using the heat shunt. Successively connected micro-vias serve as the heat sink. An independent claim is also included for a device for cooling a glow plug control device.

Schaltungsträger, Leistungsschaltungsanordnung mit einem Schaltungsträger, Verfahren zum Herstellen eines Schaltungsträgers

Offenbart wird ein Schaltungsträger (ST) zum Halten eines elektrischen Leistungsbauelements (BE), umfassend: – einen Kühlkörper (KK) aus einem Metall oder einer Metalllegierung zum Halten und zum Kühlen des Leistungsbauelements (BE); – eine Isolierschicht (IS) aus einer elektrisch isolierenden Keramik, welche auf einer Oberfläche (OF1) des Kühlkörpers (KK) ausgebildet ist und zur elektrischen Isolation zwischen dem Leistungsbauelement (BE) und dem Kühlkörper (KK) dient; – eine Leiterbahnschicht (LS) aus Aluminium oder einer Aluminiumlegierung, welche auf einer von dem Kühlkörper (KK) abgewandten Oberfläche (OF2) der Isolierschicht (IS) ausgebildet ist und zur Herstellung flächiger, mechanischer und elektrischer Verbindung zu dem Leistungsbauelement (BE) dient; – eine elektrisch leitende Kontaktschicht (KS) aus Kupfer oder einer Kupferlegierung, welche auf einer vom Kühlkörper (KK) abgewandten Oberfläche (OF3) der Leiterbahnschicht (LS) ausgebildet ist und zur Herstellung flächiger, mechanischer ...

Elektronische Baugruppe und Verfahren zum Herstellen einer elektronischen Baugruppe

Es wird eine elektronische Baugruppe (5) aufgezeigt, umfassend: ein Substrat (10) mit auf einer ersten Seite (12) des Substrats (10) angeordneten elektronischen Bauelementen (70-78), gekennzeichnet durch mehrere voneinander durch ein Zwischenbereichsmaterial mit einem ersten Wärmeleitfähigkeitskoeffizienten umfassende Zwischenbereiche (40-44) getrennte Bereiche (20, 22, 24, 26, 28, 30) der ersten Seite (12) umfasst, wobei mindestens einer der Bereiche (20, 22, 24, 26, 28, 30) der ersten Seite (12) ein, insbesondere vor einem Aushärten fließfähiges, Bedeckungsmaterial mit einem zweiten Wärmeleitfähigkeitskoeffizienten aufweist, wobei das Bedeckungsmaterial des jeweiligen Bereichs (20, 22, 24, 26, 28, 30) der ersten Seite (12) jeweils ein oder mehrere der Bauelemente (70-78) und einen Teil der ersten Seite (12) bedeckt, ...

Optoelektronisches Bauelement und Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen

Es wird ein optoelektronisches Halbleiterbauelement (1) mit einem Träger (5) und einem Halbleiterkörper (2) angegeben, wobei der Halbleiterkörper an dem Träger befestigt ist und eine Halbleiterschichtenfolge mit einem zum Erzeugen und/oder zum Empfangen von Strahlung vorgesehenen aktiven Bereich (20), einer ersten Halbleiterschicht (21) und einer zweiten Halbleiterschicht (22) aufweist. Der aktive Bereich ist zwischen der ersten Halbleiterschicht und der zweiten Halbleiterschicht angeordnet. Der Träger ist elektrisch leitfähig und in einen ersten Trägerkörper (51) und einen zweiten Trägerkörper (52) unterteilt, wobei der erste Trägerkörper und der zweite Trägerkörper voneinander elektrisch isoliert sind. Der erste Trägerkörper weist auf der dem Halbleiterkörper abgewandten Seite einen ersten externen Kontakt (61) des Halbleiterbauelements auf, wobei der erste Kontakt über den ersten Trägerkörper mit der ersten Halbleiterschicht elektrisch leitend verbunden ist. Der zweite Trägerkörper weist ...

Chipmodul, Isoliermaterial und Verfahren zur Herstellung eines Chipmoduls

Das Chipmodul umfasst einen Träger, einen Halbleiterchip, der auf dem Träger angeordnet oder in den Träger eingebettet ist, und eine Isolierschicht, die mindestens teilweise eine Fläche des Trägers bedeckt, wobei die dielektrische Konstante r und die Wärmeleitfähigkeit der Isolierschicht die Bedingung ·r < 4,0 W·m1·K1 erfüllen.

Semiconductor device e.g. electro-mechanical control device for controlling motor used in vehicle, has first heat-conducting element that is laminated between metal element and second heat conducting elements

The semiconductor device (10a) has a first heat conducting element (5a) arranged between the semiconductor components (1a-1q) and the metallic element (4). Several second heat-conducting elements (6a) are arranged on second surface of semiconductor device. The heat generated by semiconductor component is discharged to metal element. The first heat-conducting element is laminated between metal element and second heat conducting elements, such that the distances (D) between all second heat-conducting elements and metallic element are equal. The second heat-conducting element has thermal conductivity higher than the first heat-conducting element. The printed circuit board (2a) is made of insulating resin material, and predetermined wiring pattern is composed of copper foil. An independent claim is included for method for manufacturing semiconductor device.

Aufbau und Verfahren zum Verbinden einer ersten und einer zweiten Baugruppe durch Verkleben

Vorgeschlagen werdenein Aufbau umfassend eine erste Baugruppe (21) und eine zweite Baugruppe (29),wobei die erste und die zweite Baugruppe mittels einer Klebstoffschicht (22, 23, 24, 25) miteinander verbunden sind, dadurch gekennzeichnet, dass die Klebstoffschicht (22, 23, 24, 25) durch einen Kompositklebstoff gebildet ist, welcher einen Zementklebstoff und mindestens einen diesem zugesetzten keramischen Füllstoff aufweist sowieein Verfahren zum Verbinden einer ersten Baugruppe mit einer zweiten Baugruppe,wobei ein Kompositklebstoff, umfassend einen Zementklebstoff und mindestens einen keramischen Füllstoff, bereitgestellt wird, wobei der Kompositklebstoff auf zumindest Teilbereiche einer ersten Oberfläche der ersten Baugruppe (21) aufgebracht wird und wobei eine der ersten Oberfläche der ersten Baugruppe (21) abgewandte Oberfläche der Schicht (22, 23, 24, 25) aus Kompositklebstoff mit einer zweiten Oberfläche der zweiten Baugruppe (29) in Kontakt gebracht wird.

Wärme abstrahlendes Bauelement und elektrischer Verteilerkasten

Es werden ein Wärme abstrahlendes Bauelement und ein elektrischer Verteilerkasten bereitgestellt, die eine einfache Ausbildung haben und fähig sind, durch eine Halbleitervorrichtung erzeugte Wärme rasch abzustrahlen. Ein Stützbauelement 20, das Wärme aus einem Substratabschnitt 31 mit einer Montagefläche, auf die eine Halbleitervorrichtung 13 montiert ist, über einen gegenüberliegenden Plattenabschnitt 223 aufnimmt, der der Montagefläche gegenüberliegt, und die aufgenommene Wärme abstrahlt, weist einen in dem gegenüberliegenden Plattenabschnitt 223 gebildeten ausgesparten Abschnitt 24 an einer Position auf, die der Halbleitervorrichtung 13 entspricht. Der ausgesparte Abschnitt 24 hat eine Wanddicke, die größer als diejenige eines anderen Abschnitts des gegenüberliegenden Plattenabschnitts 223 ist.

Halbleitervorrichtung mit Metallplatten und Halbleiterchip

Es wird eine Halbleitervorrichtung geschaffen, die aufweist: einen Halbleiterchip (10); eine erste Metallplatte (20), die mittels einer ersten Lötschicht (51) auf einer Seite des Chips (10) angeordnet ist; eine zweite Metallplatte (40), die mittels einer zweiten Lötschicht (52) auf der anderen Seite des Chips (10) angeordnet ist; eine dritte Metallplatte (30), die mittels einer dritten Lötschicht (53) auf der zweiten Metallplatte (40) angeordnet ist; eine Stützeinrichtung (80, 85, 87) zum Halten eines Abstands zwischen dem Chip (10) und der ersten Metallplatte (20) und/oder zwischen dem Chip (10) und der zweiten Metallplatte (40); und eine Aufnahmeeinrichtung (90) zum Aufnehmen von überschüssigem Lot, wenn die dritte Lötschicht (53) das überschüssige Lot aufweist.

Halbleiterbauelement

HALBLEITERBAUTEIL

Halbbrücken-/Vollbrücken-Schaltungsanordnung sowie dafür geeigneter p-Kanal-MOS-Feldeffekttransistor

P-Kanal-MOS-Feldeffekttransistor (30), mit einem Vorderseitenkontakt (31), einem Rückseitenkontakt (32) sowie einem zwischen Vorderseitenkontakt (31) und Rückseitenkontakt (32) vorgesehenen Halbleiterkörper (33), wobei in dem Halbleiterkörper: – ein p-dotiertes Halbleitersubstrat (34), – eine auf dem Halbleitersubstrat (34) angeordnete, als floatendes Bodygebiet dienende n-dotierte Halbleiterschicht (35), – p-dotierte Sourcegebiete (36), die in der n-dotierten Halbleiterschicht (35) vorgesehen sind und, ausgehend von der dem Substrat (34) abgewandten Hauptoberfläche (37) der n-dotierten Halbleiterschicht (35), mit dem Substrat (34) in Verbindung stehen, – p-dotierte Draingebiete (38), die in der n-dotierten Halbleiterschicht (35) vorgesehen sind und sich, ausgehend von der dem Substrat (34) abgewandten Hauptoberfläche (37) der n-dotierten Halbleiterschicht (35), in die n-dotierte Halbleiterschicht (35) hinein erstrecken, – gegenüber ihrer Umgebung isolierte Gateelektroden (39), durch die ...

... 985,671. Semi-conductor devices. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. Sept. 29, 1961 [Oct. 1, 1960; Oct. 14, 1960], No. 35187/61. Heading H1K. A semi-conductor device mounted on a header is disposed in a blind hole in a metal block of parallelipiped form with the header sealing off the hole, for example as illustrated in Fig. 8. In this case dissipation of heat from the transistor is facilitated by soldering the collector 6 (as shown) and/or the emitter to a massive cooling plate 17 and filling the remainder of the bore with a heat-conducting mixture of zinc oxide and silicon oil. The block is massive enough to resist distortion by pressures used in assembling the header therein. A threaded hole (as shown) or a slot is provided in the end of the block to allow it to be bolted to a chassis. In alternative devices using similar blocks, which may be of aluminium or tinned copper a metal cylinder or helix is provided surrounding the base plate to facilitate cooling. Another possibility is ...

Synthetic Diamond Heat Spreaders

TRANSISTOR MOUNTING APPARATUS

ELECTRICAL PRINTED CIRCUIT BOARD ASSEMBLY AND METHOD OF MANUFACTURE THEREOF

... 1383487 Printed circuits NORTHROP CORP 30 March 1973 [10 April 1972] 15375/73 Heading H1R A printed circuit board assembly comprises an electrically and thermally conducting layer 12, e.g. vacuum deposited on insulant substrate board 11, and photoetched out at 13 to leave insulated electrically conductive lands 14, 15, 16 providing grounds and heat sinks for respective components, and alignment members 18 (Fig. 1). Several layers of polymeric material are laminated on to surface 12 and photoetched to leave cavities 20 to 24 for components and also alignment marker holes to form an alignment plate 25 (Fig. 2). Components 35 (which may be integrated circuit chips) are placed in the cavities in positional alignment with the markers and are bonded to the layer 12 so as to protrude above the alignment plate, and selected components, e.g. those in cavities 22, 23 have distinct ground and heat sink connections 15, 16 (Fig. 5). A conventional etched printed circuit board 40 (Fig. 7), with photoetched ...

Electrically isolated power semiconductor package

Improvements relating to adhesive mountings

An electronic component (2) such as a transistor is secured to a heatsink (1) by adhesive (3). To ensure the mutual electrical insulation provided by the adhesive layer, the latter incorporates a separator (4) in the form of a thin perforated sheet or mesh through whose apertures the adhesive permeates. The adhesive and separator may be applied separately or the separator may be preimpregnated. The technique may be applied to other components where direct contact must be avoided. ...

Ball grid array package

IC device with a metal thermal conductive layer having an opening for evacuating air

An IC device comprises an interconnection substrate 50 having at least one conductive layer 70 and at least one insulating layer 32, a first metal thermal conductive layer 70 and a second metal thermal conductive layer 83 having a surface exposed to an exterior. This second layer 83 has an opening 84 formed at a central portion, and a hole region 36 is formed within the interconnection substrate 50 and the first metal thermal conductive layer 70. An IC chip 40 is positioned with a first surface disposed at a central portion of the hole region 36. A second surface of the IC chip 40 has a plurality of bond pads 41. The chip 40 has a width larger than the diameter of the opening 84 in the second thermal conductive later 83 and is in contact with the second thermal conductive layer 83. A plurality of bond wires 9 electrically connect the bond pads 41 on the IC chip 40 with the first conductive trace layer 70, and an encapsulation material 42 fills the hole region 36 and encloses the bond wires ...

Circuit element

In a circuit element 300 having a heat-conducting body 301 having top and bottom surfaces, and a die having an electronic circuit thereon, the die includes first and second contact points for powering the electronic circuit. The die is in thermal contact with the heat-conducting body, the die having a bottom surface that is smaller than the top surface of the heat-conducting body. The first contact point on the die is connected to a first trace 308 bonded to the top surface of the heat-conducting body. An encapsulating cap 326 covers the die. The first trace has a first portion that extends outside of the encapsulating cap and a second portion that is covered by the encapsulating cap. The heat-conducting body is preferably constructed from copper or aluminum and includes a cavity having an opening on the first surface in which the die is mounted. The die preferably includes a light-emitting device 314.

Flip chip package incorporating metallurgical bond to enhance thermal conduction

An integrated circuit device 10 incorporating a metallurgical bond to enhance thermal conduction to a heat sink 28. In a semiconductor device, a surface of an integrated circuit die 14 is metallurgically bonded to a surface of a heat sink 28. In an exemplary method of. manufacturing the device, the upper surface of a package substrate 12 includes an inner region and a peripheral region. The integrated circuit die 14 is positioned over the substrate surface and a active surface 16 of the integrated circuit die 14 is placed in contact with the package substrate 12. A metallic layer 30 is formed on a second opposing surface 18 of the integrated circuit die 14. A preform is positioned on the metallic layer and a heat sink 28 is positioned over the preform. A joint layer is formed with the preform, metallurgically bonding the heat sink 28 to the second surface 18 of the integrated circuit die 14.

Semiconductor device structures

A plurality of microwave semiconductor devices is provided by plating a thin heat sink layer on a surface of a wafer of semiconductor material, masking selected portions of the heat sink layer, and plating unmasked portions of the heat sink layer to form a support layer. Substantial portions of the semiconductor material are removed to form a plurality of mesa shaped diodes, at least one semiconductor mesa shaped diode being formed in each region of the semiconductor material disposed on the masked portions of the heat sink layer. Thus each mesa shaped diode, or sets of mesa shaped diodes, has formed on one surface thereof a thin heat sink layer while the mesa shaped diodes are supported by the support layer for subsequent processing. Upper electrodes for the diodes are formed interconnecting the mesa shaped diodes. The individual diodes, or sets thereof, are then separated from the support structure to provide individual single diode, or multiple diode devices.

Flip-chip electronic device with carrier having heat dissipation elements free of solder mask

Flip-chip electronic device with carrier having heat dissipation elements free of solder mask

Heat sink

Power mesfet

A power MESFET comprises a layer (4) of a III-V semi-conductor material (particularly gallium arsenide) not exceeding 20 mu m (preferably not exceeding 10 mu m) in thickness, one face of the layer (4) being provided with an active surface zone (7) and source (41)-, drain (42)-, and gate (43)- electrodes, and the opposite rear face with a heat-dissipating metal coating (51). In production, the layer (4) is initially supported on a GaAs substrate which is etched away after an auxiliary carrier is fixed to the free face of the layer (4). ...

A semiconductor device

... 1,130,666. Semi-conductor device. NIPPON ELECTRIC CO. Ltd. 27 April, 1967 [30 Sept., 1966], No. 19508/67. Heading H1K. A semi-conductor device comprises a semiconductor element disposed in a substantially central recess on one side of a flat conductor member with one terminal connected thereto so that the conductor member serves as a common electrode for the device, there being a plurality of slots in the conductor member extending from the recess to its periphery with a signal conductor mounted in each slot and separated from the common conductor member by a dielectric layer, the signal conductors being connected to further respective terminals and the semiconductor element. As shown in Fig. 1a, the flat common conductor 13 is in the form of a disc having a diametrical slot cut part of the way through its thickness. A ceramic insulator, such as steatite, is laid in the base of the slot and flat strip conductors 11 and 12 of oxygen-free copper are arranged within the slot as shown. A diffused ...

ADHESIVE MOUNTINGS

Pre-application of grease to heat sinks with a protective coating

Semiconductor diodes

... 895,232. Semi-conductor diodes. HACKBRIDGE & HEWITTIC ELECTRIC CO. Ltd., WELLS, R., and FRICKER, D. J. July 21, 1960 [Aug. 11, 1959], No. 27424/59. Class 37. A diode comprises a PN semi-conductor body mounted on a solid projection in a cup-shaped terminal member which together with a second cup - shaped terminal member forms a sealed enclosure. Fig. 2 shows a semi-conductor body 20 comprising a PN junction, opposite faces being connected to two cup-shaped metal terminals A and C, which are hermetically sealed together by an insulating material such as " Araldite " (Registered Trade Mark). An L-shaped ring 13 may be provided, so that during assembly, ring 13 is first placed on an insulating support inside the flange of terminal C, the semi-conductor body is placed on the central extension of terminal C which extends beyond the flange portion of terminal C. Terminal A is then placed in position and the insulating resin applied to terminals A and C and ring 13. The semi-conductor body is first ...

PROCESS FOR PRODUCING SEMICONDUCTOR DEVICES WITH A VERY LOW THERMAL RESISTANCE

Semiconductor device with improved thermal properties

A microwave semiconductor device with improved thermal properties is disclosed wherein multiple active semiconductor bodies are disposed between two electrically and thermally isolated heat sinks. Two separate thermal paths are provided for heat produced within the semiconductor material. The maximum operating power of devices such as double-drift IMPATT diodes is greatly extended.

Improvements relating to electric rectifiers embodying semi-conductor material

... 915,676. Semi-conductor devices. ASSOCIATED ELECTRICAL INDUSTRIES Ltd. Nov. 3, 1959 [Nov. 4, 1958], No. 35427/58. Class 37. Fig. 2 shows a section through a PN junction rectifier mounted in an hermetically sealed casing and attached to a heat sink 1, the other connection 9 to the rectifier being made through an insulating sleeve 10 through the wall of the casing. During construction the wall is brazed into a recess in the base 1. The connection through the wall of the housing consisting of a terminal conductor 7, the insulating sleeve 10, metal caps 12, a metal plug 13 to which a terminal member 14 is secured and a projection 8 on conductor 7 for making the internal connection 9. This assembly is brazed or soldered together and the flange 11 is then brazed to the wall of the housing. The semi-conductor wafer 2 with a preformed PN junction on it is then soldered to contact 5 and the reverse side is soldered to base 1. Flexible lead 6 is then soldered simultaneously to both terminal 5 and ...

POWER SEMICONDUCTOR MODULE

RADIATOR BOX

CCU COOLING ARRANGEMENT WITH IMPROVED ACHIEVEMENT

HALBLEITERBAUEINHEIT

BALL MATRIX HOUSING WITH HEAT DISTRIBUTOR AND ITS PRODUCTION

SEMICONDUCTOR ACHIEVEMENT MODULE, WITH FLEXIBLE CIRCUIT CARRIER FRAMEWORK

COOLING DEVICE FOR AN ELECTRICAL BUILDING GROUP

Two or multi-level transistor amplifiers

HYBRID INTEGRATED CIRCUIT WITH A SYSTEM FOR HEAT DISSIPATION

Device to the Wärmeausgleich and for the cooling of a pair of transistors

PROCEDURE FOR THE PRODUCTION OF RADIATOR BOX

A combined heat sink/electromagnetic shield

MINIATURE MOLDLOCKS FOR HEATSINK OR FLAG FOR AN OVERMOLDED PLASTIC PACKAGE

Heat-pipe type cooling apparatus

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Method and apparatus for bonding substrates

FUNCTIONAL PACKAGE FOR COMPLEX ELECTRONIC SYSTEMS AND METHOD OF FABRICATION

USE OF DIVERSE MATERIALS IN AIR-CAVITY PACKAGING OF ELECTRONIC DEVICES

Semiconductor circuit devices (dies) are incorporated into moisture- impenetrable electronic packages by forming enclosures around the die in three separate parts--base, sidewalls, and lid. The die is first soldered or otherwise bonded to the base, followed by attachment of the sidewalls to the base, and finally the lid to the sidewalls. For procedures involving a heat- conductive base and a high soldering temperature, the die can be secured to the base at the high soldering temperature, followed by application of the sidewalls to the base at a significantly lower temperature, avoiding potential high-temperature damage to the sidewalls. Plastic sidewalls which would otherwise deteriorate or become distorted upon exposure to the high soldering temperature can thus be used. For electronic packages in general, the use of plastic sidewalls allows the use of combinations of materials for the lid and base that are otherwise incompatible, and reduces or eliminates the incidence of failure due ...

THERMAL CONDUCTION PRINCIPLE AND DEVICE FOR INTERCROSSED STRUCTURE HAVING DIFFERENT THERMAL CHARACTERISTICS

The present invention relates to relay thermal conductor made of material having better thermal conductivity coefficient, wherein which is thermal conductively coupled with heating or cooling first thermal body at one end or face thereof, and is coupled with interface thermal conductor having higher specific heat capacity at the other end or face thereof; the relay thermal conductor directly performs thermal conduction with second thermal body at another part thereof; and the interface thermal conductor having higher specific heat capacity is the thermal conducting carrier between the relay thermal conductor and the second thermal body.

SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS

SEMICONDUCTOR STRUCTURES AND MANUFACTURING METHODS A plurality of microwave semiconductor devices is provided by plating a thin heat sink layer on a surface of a wafer of semiconductor material, masking selected portions of the heat sink layer, and plating unmasked portions of the heat sink layer to form a support layer. Substantial portions of the semiconductor material are removed to form a plurality of mesa shaped diodes, at least one semiconductor mesa shaped diode being formed in each region of the semiconductor material disposed on the masked portions of the heat sink layer. Thus each mesa shaped diode, or sets of mesa shaped diodes, has formed on one surface thereof a thin heat sink layer while the mesa shaped diodes are supported by the support layer for subsequent processing. Upper electrodes for the diodes are formed interconnecting the mesa shaped diodes. The individual diodes, or sets thereof, are then separated from the support structure to provide individual single diode, ...

CIRCUIT MODULE WITH ENHANCED HEAT TRANSFER AND DISTRIBUTION

A circuit module having enhanced heat transfer and distribution characteristics which is particularly adapted for use in high speed electronic digital computers. The circuit module includes a circuit board assembly with a plurality of electronic devices such as integrated circuits, mounted on a circuit board. The circuit board includes conductive pads and plated-through holes forming a thermally conductive flow path from each electronic device to the opposite side of the circuit board for more efficient heat transfer away from the module. The heat pads and plated-through holes are preferably connected with the ground plane layer of the circuit board for better heat distribution as well.

BACK-TO-BACK SEMICONDUCTOR HIGH FREQUENCY DEVICE

R.F. POWER TRANSISTOR DEVICE WITH CONTROLLED COMMON LEAD INDUCTANCE

MULTIPLE SEMICONDUCTOR CHIP ASSEMBLY AND MANUFACTURE

DIELECTRIC HEAT PATH DEVICES, AND SYSTEMS AND METHODS USING THE SAME

Devices, systems, and methods for dissipating heat generated from an electrical current carrying device are provided herein. The disclosed concept provides a dielectric heat path device that assists in heat dissipation of an electrical current carrying device by transferring heat from one end of the device to another. The disclosed concept also provides systems that communicate heat generated by an electrical device to a thermally grounded secondary device through a dielectric heat path device to dissipate heat.

POWER SEMICONDUCTOR PACKAGE

POWER SEMICONDUCTOR PACKAGE A hermetically sealed power semiconductor package includes a body 11 and a thick metal back 24. The metal back serves as a mounting device as well as a thermal channel for the package eliminating the need for intermediate heatsinks. For example, fasteners 47 extending into the back 24 can be used to mount the package to a printed wiring board 38 and directly to a heatsink 44.

HEAT INSULATING BOARD AND METHOD FOR HEAT INSULATION BY USING THE SAME

A heat insulating board and a method for heat insulation by utilizing the same based on a novel heat-insulation theory utilizing a heat gradient. And, this heat insulating board is characterized by consisting of a composite body of an opaque heat-conducting base body positioned to face the low temperature zone and a heat conductive transparent layer positioned to face the high temperature zone, the said transparent layer having a heat volume and an absorption of heat of radiation smaller than the heat volume and absorption of heat of radiation of the said base body.

HEAT INSULATING BOARD AND METHOD FOR HEAT INSULATION BY USING THE SAME

A heat insulating board and a method for heat insulation by utilizing the same based on a novel heat-insulation theory utilizing a heat gradient. And, this heat insulating board is characterized by consisting of a composite body of an opaque heat-conducting base body positioned to face the low temperature zone and a heat conductive transparent layer positioned to face the high temperature zone, the said transparent layer having a heat volume and an absorption of heat of radiation smaller than the heat volume and absorption of heat of radiation of the said base body.

Verfahren zur Herstellung eines Sperrschichtelektrodensystems mit einer Hülle mit eingeschmolzenen Zuführungsdrähten und Sperrschichtelektrodensystem, hergestellt nach diesem Verfahren

Halbleiteranordnung

Halbleiteranordnung mit Kühlmitteln

Einrichtung mit in einer Fassung angeordneter Gleichrichterzelle

Verfahren zum Kontaktieren von in Halbleiterkörpern einlegierten Elektroden

Verfahren zum Montieren einer Halbleitervorrichtung

Diode à semi-conducteur et son procédé de fabrication

Halbleiterbauelement

Einseitig gekühlte Halbleiteranordnung

Schalter für hohe Leistungen, mit Halbleiterventilen

Halbleitergleichrichtervorrichtung

Verfahren und Vorrichtung zur Kühlung von Halbleiterbauelementen

Stromrichterzweig mit mehreren parallel arbeitenden Zellen

Halbleitervorrichtung zum Erzeugen oder Verstärken von Mikrowellen

Boîtier de dispositif semi-conducteur, notamment de diode ou thyristor

Halbleiterbauelement und Verfahren zu dessen Herstellung

Semiconductor device

A semiconductor device which includes a substrate, a semiconductor element arranged on the substrate, a heat dissipation component arranged on the semiconductor element, and a mold component covering an upper part of the substrate, the semiconductor element and the heat dissipation component, wherein an area of a surface on the semiconductor element of the heat dissipation component is larger than an area of a surface on which the heat dissipation component of the semiconductor element is arranged.

Systems and Methods for Heat Dissipation Using Thermal Conduits

The addition of thermal conduits by bonding bond wires to bond pads either in a wire loop configuration or a pillar configuration can improve thermal dissipation of a fabricated die. The thermal conduits can be added as part of the normal packaging process of a semiconductor die and are electrically decoupled from the circuitry fabricated on the fabricated die. In an alternative, a dummy die is affixed to the fabricated die and the thermal conduits are affixed to the dummy die. Additionally, thermal conduits can be used in conjunction with a heat spreader.

Heat sink core member and its fabrication procedure

A heat sink core member made by: preparing a predetermined mass of aluminum block, extruding the aluminum block through an extruding machine into a tubular body having one close end wall and then punch-cutting the outside wall of the tubular body to form a plurality of densely distributed and equally spaced vertical retaining grooves. Radiation fins can easily be affixed to the vertical retaining grooves of the tubular body to form a heat sink.

Semiconductor structure having conductive vias and method for manufacturing the same

A semiconductor structure includes a plurality of thermal vias and a heat dissipation layer disposed at a periphery of a back surface of a lower chip in a stacked-chip package. This arrangement improves solderability of a subsequently-bonded heat sink. Additionally, the thermal vias and the heat dissipation layer provide an improved thermal conduction path for enhancing heat dissipation efficiency of the semiconductor structure. A method for manufacturing the semiconductor structure is also provided.

Flexible-to-rigid tubing

A flexible-to-rigid tube is flexible when routed and is then rigidized to increase burst strength. According to the preferred embodiments of the present invention, the flexible-to-rigid tube is included in a cooling plate assembly for transferring heat from electronic components mounted on a circuit board. In one embodiment, the flexible-to-rigid tube (while in a flexible state) includes a polydimethylsiloxane (PDMS) or other silicone containing pendant or terminal epoxy, vinyl and/or acrylate functional groups and an initiator (e.g., a sulfonium salt photoinitiator, a free radical photoinitiator, or a thermal initiator). In another embodiment, triallyl isocyanurate (TAIC) and an initiator are incorporated into a conventional PVC-based tubing material. The flexible-to-rigid tube changes from the flexible state to a rigid state via formation of a cross-linked network upon exposure to actinic radiation or heat.

Semiconductor package

A semiconductor package includes a radiator plate including a stress alleviation section, a resin sheet arranged on the radiator plate, a pair of bus bars joined to the radiator plate through the resin sheet at positions at which the stress alleviation section is interposed between the bus bars, and a semiconductor device joined to the pair of bus bars by being sandwiched between the bus bars, and energized from outside through the pair of bus bars.

Semiconductor chip device with polymeric filler trench

A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.

Electronic Packaging With A Variable Thickness Mold Cap

An electronic package with improved warpage compensation. The electronic package includes a mold cap having a variable thickness. The variable thickness can have a mound or dimple design. In another embodiment, a method is provided for reducing unit warpage of an electronic package by designing the topography of a mold cap to compensate for warpage.

Method of making a semiconductor chip assembly with a post/base heat spreader and a substrate using grinding

A method of making a semiconductor chip assembly includes providing a post and a base, mounting an adhesive on the base including inserting the post through an opening in the adhesive, mounting a substrate on the adhesive including inserting the post into an aperture in the substrate, then flowing the adhesive between the post and the substrate in the aperture, solidifying the adhesive, then grinding the post and the adhesive, then mounting a semiconductor device on a heat spreader that includes the post and the base, electrically connecting the semiconductor device to the substrate and thermally connecting the semiconductor device to the heat spreader.

Integrated circuit packaging system with active surface heat removal and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing an interconnect structure having a structure bottom side, a structure top side, and a cavity, the structure bottom side electrically connected to the structure top side; mounting an integrated circuit entirely within the cavity, the integrated circuit having an active side coplanar with the structure top side; forming an encapsulation partially covering the interconnect structure and the integrated circuit, the encapsulation having an encapsulation top side coplanar with the structure top side and the active side; forming a top re-passivation layer over the structure top side and the encapsulation; and mounting a heat sink over the top re-passivation layer for removing heat from the active side.

Integrated circuit packaging system with a shield and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a substrate; mounting a first integrated circuit over the substrate; forming an encapsulant around the first integrated circuit and over the substrate; and forming a shield structure within and over the encapsulant while simultaneously forming a vertical interconnect structure.

Semiconductor chip assembly with bump/base/ledge heat spreader, dual adhesives and cavity in bump

A semiconductor chip assembly includes a semiconductor device, a heat spreader, a conductive trace and dual adhesives. The heat spreader includes a bump, a base and a ledge. The conductive trace includes a pad and a terminal. The semiconductor device is mounted on the bump in a cavity in the bump, is electrically connected to the conductive trace and is thermally connected to the heat spreader. The bump extends into an opening in the first adhesive and is aligned with and spaced from an opening in the second adhesive. The base and the ledge extend laterally from the bump. The first adhesive is sandwiched between the base and the ledge, the second adhesive is sandwiched between the conductive trace and the ledge and the ledge is sandwiched between the adhesives. The conductive trace is located outside the cavity and provides signal routing between the pad and the terminal.

Semiconductor module having a semiconductor chip stack and method

A semiconductor module having a semiconductor chip stack and a method for producing the same is disclosed. In one embodiment, a thermally conductive layer with anisotropically thermally conductive particles is arranged between the semiconductor chips. The anisotropically thermally conductive particles have a lower thermal conductivity in a direction vertically with respect to the layer or the film than in a direction of the layer or the film.

Thermal Power Plane for Integrated Circuits

A mechanism is provided for a thermal power plane that delivers power and constitutes minimal thermal resistance. The mechanism comprises a processor layer coupled, via a first set of coupling devices, to a signaling and input/output (I/O) layer and a power delivery layer coupled, via a second set of coupling devices, to the processor layer. In the mechanism, the power delivery layer is dedicated to only delivering power and does not provide data communication signals to the elements of the mechanism. In the mechanism, the power delivery layer comprises a plurality of conductors, a plurality of insulating materials, one or more ground planes, and a plurality of through laminate vias. In the mechanism, the signaling and input/output (I/O) layer is dedicated to only transmitting the data communication signals to and receiving the data communications signals from the processor layer and does not provide power to the elements of the processor layer.

3d optoelectronic packaging

An optoelectronic (OE) package or system and method for fabrication is disclosed which includes a silicon layer with a wiring layer. The silicon layer has an optical via for allowing light to pass therethrough. An optical coupling layer is bonded to the silicon layer, and the optical coupling layer includes a plurality of microlenses for focusing and or collimating the light through the optical via. One or more first OE elements are coupled to the silicon layer and electrically communicating with the wiring. At least one of the first OE elements positioned in optical alignment with the optical via for receiving the light. A second OE element embedded within the wiring layer. A carrier may be interposed between electrical interconnect elements and positioned between the wiring layer and a circuit board.

Heat dissipation device

An exemplary heat dissipation device includes a fan, a fin unit, and a mounting frame connected the fan and the fin unit together. The fan includes a casing and an impeller received in the casing. The casing defines an air outlet at one side thereof. The fin unit is arranged at the air outlet of the fan. The mounting frame connects the fan and the fin unit together. The mounting frame includes a supporting member for supporting the fan thereon and a connecting member substantially covering three sides of the fin unit and connected to the supporting member. The fan is pivotably connected to the mounting frame.

Heat sinking element and method of treating a heat sinking element

A heat sinking element and a method of treating a heat sinking element are provided. The heat sinking element includes a metal substrate. The metal substrate is mainly composed of aluminium. A surface of the metal substrate has a plurality of micro-nano holes and a diameter of the micro-nano holes is smaller than 300 nm. The method of treating a heat sinking element includes performing an oxidation process and an etching process on the metal substrate so as to form the plurality of micro-nano holes.

Phase change energy storage in ceramic nanotube composites

The present disclosure generally relates to methods and systems for forming phase change material composites and to the thus formed phase change material composites. In some examples, a method for forming a phase change material (PCM) composite may include dispersing nanowire material in a nonpolar solvent to form a nanowire-solvent dispersion, adding a PCM to the nanowire-solvent dispersion to form a nanowire-solvent-PCM dispersion, heating the nanowire-solvent-PCM dispersion, and removing the solvent.

System comprising a semiconductor device and structure

A method of manufacturing a semiconductor device, the method including, providing a first monocrystalline layer including semiconductor regions, overlaying the first monocrystalline layer with an isolation layer, transferring a second monocrystalline layer comprising semiconductor regions to overlay the isolation layer, wherein the first monocrystalline layer and the second monocrystalline layer are formed from substantially different crystal materials; and subsequently etching the second monocrystalline layer as part of forming at least one transistor in the second monocrystalline layer.

Heat-dissipating device

An exemplary heat-dissipating device includes a base having a first surface, and a number of fins extending from the first surface. Each fin includes a main body perpendicular to the first surface and an extending portion perpendicularly extending from an end of the main body distal from the first surface.

Method for Manufacturing Heat Dissipation Bulk of Semiconductor Device

A method for manufacturing a heat dissipation bulk of a semiconductor device including the following steps is described. An electrically conductive layer is formed to cover a surface of a temporary substrate. At least one semiconductor chip is connected to the electrically conductive layer by at least one metal bump, wherein the at least one metal bump is located between the at least one semiconductor chip and the electrically conductive layer. A metal substrate is formed on the electrically conductive layer, wherein the metal substrate fills up a gap between the at least one semiconductor chip and the electrically conductive layer. The temporary substrate is removed.

Integrated heat pillar for hot region cooling in an integrated circuit

The thermal energy transfer techniques of the disclosed embodiments utilize passive thermal energy transfer techniques to reduce undesirable side effects of trapped thermal energy at the circuit level. The trapped thermal energy may be transferred through the circuit with thermally conductive structures or elements that may be produced as part of a standard integrated circuit process. The localized and passive removal of thermal energy achieved at the circuit level rather just at the package level is both more effective and more efficient.

Shell structure and manufacturing method for shell structure of electronic device

A shell structure includes a composite material layer and a second material layer is provided. The composite material layer includes a woven layer and a first material layer. The woven layer has a first surface and a second surface opposite to each other. The first material layer is located on the first surface and has a plurality of through-holes. The second material layer is disposed on the first material layer and has a plurality of extending-portions adapted to be combined with the woven layer and fix the second material layer and the composite material layer to each other. In addition, a manufacturing method for shell structure of electronic device is also provided.

Metal substrate/metal impregnated carbon composite material structure and method for manufacturing said structure

Provided are a heat releasing material for an electronic device being manufactured by the junction of a metal impregnated carbon composite material on a copper or aluminum substrate with reduced warpage; and a method for manufacturing the heat releasing material. A metal substrate/metal impregnated carbon composite material structure, characterized in that it comprises a metal substrate comprising a metal sheet, plate or block and, being joined on the metal substrate via a brazing material, a metal impregnated carbon composite material having a thickness of 0.1 mm to 2 mm; and a method for manufacturing the metal substrate/metal impregnated carbon composite material structure, characterized in that it comprises a step wherein a brazing material is caused to be present between the metal substrate and the metal impregnated carbon composite material, and they are kept at a temperature of 500° C. or higher and under a pressure of 0.2 MPa or more and then cooled.

thermal management for electronic device housing

The present invention relates to a cage for thermal management and for housing an electronic module. The cage includes top, bottom and side walls joined to form an interior cavity. The side walls form an enclosure having a first panel. A thermally conductive pathway is disposed on the first panel. The enclosure receives an electronic device such as a transceiver module and a heat sink mounted on the first panel. The thermally conductive pathway is disposed between the electronic device and the heat sink so that heat from the electronic device is transmitted via the thermally conductive pathway to the heat sink.

Semiconductor package and method of fabricating the same

A semiconductor package and a method of manufacturing the same, and more particularly, to a package of a power module semiconductor and a method of manufacturing the same. The semiconductor package includes a substrate including a plurality of conductive patterns spaced apart from one another; a plurality of semiconductor chips disposed on the conductive patterns; a connecting member for electrically connecting the conductive patterns to each other, for electrically connecting the semiconductor chips to each other, or for electrically connecting the conductive pattern and the semiconductor chip; and a sealing member for covering the substrate, the semiconductor chips, and the connecting member, wherein a lower surface of the substrate and an upper surface of the connecting member are exposed to the outside by the sealing member.

Low cost thermally enhanced hybrid bga and method of manufacturing the same

A semiconductor package is formed having a substrate juxtaposed on at least two sides of a semiconductor die. Both the substrate and the semiconductor die are affixed to a conductive layer that draws heat generated during use of the semiconductor package away from the semiconductor die and the substrate. There are also electrical contacts affixed to the substrate and the semiconductor die. The electrical contacts facilitate electrical connection between the semiconductor die, the substrate, and any external devices or components making use of the semiconductor die. The substrate, semiconductor die, and at least a portion of some of the electrical contacts are enclosed by an encapsulating layer insulating the components. Portions of the electrical contacts not enclosed by the encapsulating layer are affixed to an outside device, such as a printed circuit board.

Packaged semiconductor device for high performance memory and logic

A packaged semiconductor device is disclosed. The device comprises a substrate having multiple layers between first and second oppositely disposed faces, and a cavity with an opening at the first face to nest at least one integrated circuit memory device. Logic circuitry is disposed on the second face and includes contacts for electrically coupling to the stacked integrated circuit memory devices. The logic circuitry is coupled to electrical contacts formed on the first face through first electrical paths formed in the multiple layers of the substrate, the first electrical paths including conductive traces and vias.

Heatsink for led array light

A heatsink that includes a plurality of thermally conductive plates coupled to each other in a stacked configuration. Each plate includes a core section and a plurality of protrusions extending radially outwardly from the core section in a direction substantially parallel to the core section. The core section of each plate is in direct contact with the core section of an adjacent plate.

Microwave unit and method therefore

A microwave unit comprising a motherboard and a package adapted to be assembled automatically in, e.g., a Surface Mounted Device, SMD, machine is disclosed. The microwave unit preferably comprises a connecting component interconnecting the motherboard and the package, and operable to make the signal ways on a same level at both the motherboard and at the package. Furthermore, the microwave unit preferably comprises a micro-strip adapted soldering tag for soldering on two sides.

Heatsink, heatsink assembly, semiconductor module, and semiconductor device with cooling device

According to one embodiment, a heatsink includes a base and heat radiation fins placed on one of surfaces of the base and arranged in parallel to each other with a submillimeter narrow pitch. Each of the multiple heat radiation fins has a submillimeter thickness, a length in a width direction of 60 mm or smaller, and a height of 40 mm or smaller. The heatsink assembly may be constituted by allaying a plurality of the heatsinks and thermally connecting each of the heatsinks to each other using a heat transport device.

Semiconductor apparatus, method for manufacturing the same and electric device

A semiconductor apparatus includes: a semiconductor device including a first electrode; a substrate including a second electrode and a recess; and a heat-dissipating adhesive material to set the semiconductor device in the recess so as to arrange the first electrode close to the second electrode, wherein the first electrode is coupled to the second electrode and the heat-dissipating adhesive material covers a bottom surface and at least part of a side surface of the semiconductor device.

Semiconductor device and structure for heat removal

A semiconductor device comprising power distribution wires wherein; a portion of said wires have thermal connection to the semiconductor layer and said thermal connection designed to conduct heat but to not conduct electricity.

Semiconductor apparatus and method for manufacturing the same

According to one embodiment, a semiconductor apparatus includes a semiconductor device, a heat spreader, a regulating unit, a containing unit, and a holding unit. The heat spreader is bonded to the semiconductor device with an interposed solder layer. The regulating unit is configured to regulate a dimension between the semiconductor device and the heat spreader. The containing unit is configured to contain melted solder in an interior of the containing unit. The holding unit is configured to allow melted solder held in an interior of the holding unit. The holding unit is configured to replenish the melted solder in the case where an amount of the melted solder contained in the containing unit is insufficient. The holding unit is configured to recover the melted solder in the case where the amount of the melted solder contained in the containing unit is excessive.

Cooling device

A cooling device for cooling an electronic component is disclosed. The cooling device comprises a cooler comprising a base, a plurality of first fins and a plurality of second fins. The plurality of first fins extends substantially perpendicular from the base, and the plurality of second fins are secured to the base. Each of the plurality of second fins is between adjacent two of the plurality of first fins. Each of the plurality of second fins comprises a plurality of body portions and a plurality of connecting pieces. Each of the plurality of connecting pieces connects adjacent two of the plurality of body portions.

Semiconductor Device and Method of Forming a Thermally Reinforced Semiconductor Die

A semiconductor device includes a substrate with conductive traces. A semiconductor die is mounted with an active surface oriented toward the substrate. An underfill material is deposited between the semiconductor die and substrate. A recess is formed in an interior portion of the semiconductor die that extends from a back surface of the semiconductor die opposite the active surface partially through the semiconductor die such that a peripheral portion of the back surface of the semiconductor die is offset with respect to a depth of the recess. A thermal interface material (TIM) is deposited over the semiconductor die and into the recess such that the TIM in the recess is laterally supported by the peripheral portion of the semiconductor die to reduce flow of the TIM away from the semiconductor die. A heat spreader including protrusions is mounted over the semiconductor die and contacts the TIM.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a substrate, a semiconductor element disposed on the substrate, and a heat conductive member composed of a solder material. The heat conductive member covers the semiconductor element, and is connected to a connection pad formed on the substrate. A heat radiator is disposed on the heat conductive member. The heat conductive member thermally connecting the semiconductor element to the heat radiator reduces the risk that electromagnetic noise may be emitted from or may be incident on the semiconductor element.

Heat conduction for chip stacks and 3-d circuits

A semiconductor device assembly and method can include a single semiconductor layer or stacked semiconductor layers, for example semiconductor wafers or wafer sections (semiconductor dice). On each semiconductor layer, a diamond layer formed therethrough can aid in the routing and dissipation of heat. The diamond layer can include a first portion on the back of the semiconductor layer, and one or more second portions which extend vertically into the semiconductor layer, for example completely through the semiconductor layer. Thermal contact can then be made to the diamond layer to conduct heat away from the one or more semiconductor layers. A conductive via can be formed through the diamond layers to provide signal routing and heat dissipation capabilities.

Media content device with customized panel

A media device, which may take the form of a set top box (STB), includes a housing or chassis that incorporates an interface panel having selectively configured regions that cooperate with components mounted on a printed circuit board. The selectively configured regions of the interface panel may advantageously provide desired clearance or contact between the interface panel and one or more of the components. In addition, the selectively configured regions of the interface panel may be arranged to provide structural support to a top panel of the chassis while providing specific heat transfer pathways between the components and the chassis. In this manner, the interface panel may be controllably designed with a desired thermal mass and/or a desired thermal conductivity in specific regions of the interface panel by varying properties of the interface panel which may include, but are not limited to, the panel thickness and material.

Thermal module and manufacturing method thereof

A thermal module and a manufacturing method thereof. The thermal module includes a retainer member and at least one heat conduction member. The retainer has a first clamping arm and a second clamping arm opposite to the first clamping arm. The heat conduction member is disposed and fixedly clamped between the first and second clamping arms. The retainer member is formed by means of punching and integrally connected with the heat conduction member also by means of punching so that the manufacturing cost of the thermal module is lowered and the heat dissipation efficiency of the thermal module is enhanced.

Devices including composite thermal capacitors

Embodiments of the present disclosure include devices or systems that include a composite thermal capacitor disposed in thermal communication with a hot spot of the device, methods of dissipating thermal energy in a device or system, and the like.

Package carrier and method of manufacturing the same

A method of manufacturing a package carrier is provided. An insulation cover is provided. The insulation cover has an inner surface and an outer surface opposite to each other, a plurality of openings, and a containing space. A patterned metal layer is foamed on the outer surface of the insulation cover. A surface treatment layer is formed on the patterned metal layer. A heat dissipation element is formed in the containing space of the insulation cover and structurally connected to the insulation cover. A thermal-conductive layer is formed on a surface of the heat dissipation element, and a portion of the thermal-conductive layer is exposed by the openings of the insulation cover.

Heat transfer apparatus

An apparatus is provided to remove heat from a heat-generating component of a computer, such as a processor. The apparatus comprises a first heat sink having a plurality of leader fins, wherein the first heat sink is thermo-conductively coupled to a heat-generating component that is coupled to a first portion of a chassis; and a second heat sink having a plurality of follower fins, wherein the second heat sink is thermo-conductively coupled to a second portion of the chassis, and wherein the plurality of follower fins are disposed in an interlaced configuration with the plurality of follower fins to promote radiative heat transfer from the leader fins to the follower fins. Optionally, one or more alignment structures may be used to facilitate the relative movement of the first and second chassis portions into an operative position in which the leader and follower fins are in the interlaced configuration. The apparatus may be used to remove heat from a heat-generating component in a closed system with little or no limited air flow.

Power Semiconductor Module with Embedded Chip Package

A power semiconductor module includes a power semiconductor die, a metal substrate, a patterned metallization layer, a plurality of padless electrical connections, a plurality of vias and an inductor. The power semiconductor die has a top surface, an opposing bottom surface and a plurality of sides extending between the top and bottom surfaces. The metal substrate is attached to the bottom surface of the die. The patterned metallization layer is disposed above the top surface of the die. The plurality of padless electrical connections are at the top surface of the die and connect the patterned metallization layer to the die. The plurality of vias are disposed adjacent one or more of the sides of the die and electrically connected to the patterned metallization layer at a first end of the plurality of vias and to the metal substrate at a second end of the plurality of vias.

Semiconductor device

A semiconductor device includes: a main body chip; a circuit pattern on a front surface of the main body chip and including a first pad; a cap chip including a first recess in a front surface of the cap chip and a second recess in a back surface of the cap chip, the cap chip being joined to the main body chip with the first recess facing the circuit pattern; a second pad on a bottom surface of the first recess of the cap chip; a first metallic member inlaid in the second recess of the cap chip; a first through electrode electrically connecting the second pad to the first metallic member through the cap chip; and a bump electrically connecting the first pad to the second pad.

Memory Cooler

A cooler for a memory module includes heat plates on the sides of the memory module and heat fins extending from the top of the heat plates. The heat fins are optimized according to simulated or actual airflow about the memory module inside an enclosure. The heat fins may curve diagonally outward from the memory module and their free ends may be arranged substantially parallel to the airflow so air flows over their larger lateral surfaces down to the memory module.

Electronic control unit and method of manufacturing the same

An electronic control unit is disclosed. The electronic control unit includes: a resin board; a power device that is surface-mounted on the resin board; a microcomputer that is configured to control the power device; first heat radiation means for radiating heat, the first heat radiation means being disposed on an opposite side of the resin board from the power device; and first heat conduction means for conducting the heat generated by the power device to the first heat radiation means.

Package/heatsink system for electronic device

An insulating body embeds an integrated circuit and has a mounting surface, an opposite free surface, and at least one pin exposed along an edge of the mounting surface and electrically connected to a terminal of the integrated circuit. A heatsink configured to dissipate heat produced by the integrated circuit is provided in correspondence of the free surface. The heatsink includes at least one protruding element including a connection portion partly extending in contact with the free surface and partly protruding beyond a boundary of the free surface (the connection portion having a free end being distal from the insulating body), and a mounting portion extending from the free end at least up to a plane of the mounting surface. The heatsink is further electrically connected to a terminal of the integrated circuit chip. The protruding element is placed in correspondence of the at least one pin.

Light-Reflecting Substrate, Light-Emitting-Element Mounting Substrate, Light-Emitting Device, and Method for Manufacturing a Light-Emitting-Element Mounting Substrate

A method for manufacturing a light-emitting-element mounting substrate includes a step of applying a glass paste using powder of a glass material having a softening point higher than a softening point of a glass component contained in a glass-ceramic green sheet and lower than a melting point of silver so as to cover a conductor paste which is applied to a main surface of the glass-ceramic green sheet and consists of or consists primarily of silver; and a step of coating a metal layer obtained by heating them and sintering the conductor paste, with a transparent glass layer obtained by melting and then cooling the glass paste. By using the glass paste, the reaction of silver in the conductor paste with the glass component in the glass paste upon heating is suppressed, and the metal layer can be coated with the glass layer having high transparency.

Thermal enhanced package

A method of manufacturing an integrated circuit package. The method includes attaching a first surface of a semiconductor die to a thermally and/or electrically conductive substrate, forming a plurality of die connectors on a second surface of the semiconductor die, and encapsulating the semiconductor die and the plurality of die connectors in an encapsulant material. The method also includes removing a portion of the encapsulant material to expose one or more of the plurality of die connectors, thereby forming a routing surface. The method further includes forming a plurality of conductive traces on the routing surface. Each of the plurality of conductive traces is characterized by a first portion in electrical communication with one of the plurality of die connectors and a second portion in electrical communication with a package connector.

Heat dissipation device

A heat dissipation device includes a plurality of fins connected to each other and two heat pipes extending through the fins. Each fin includes a plate, an upper flange extending from a top side of the plate, a lower flange extending from a bottom side of the plate and an inner flange extending from an inner periphery of a groove defined in the plate. The fins include first fins and second fins having lengths larger than that of the first fins. The two heat pipes include a wide heat pipe and a narrow heat pipe. The wide heat pipe extends through the grooves and contacts the inner flanges of the first fins and the second fins. The narrow heat pipe extends through the grooves and contacts the inner flanges of the second fins.

Memory module in a package

A microelectronic package can include a substrate having first and second opposed surfaces, at least two pairs of microelectronic elements, and a plurality of terminals exposed at the second surface. Each pair of microelectronic elements can include an upper microelectronic element and a lower microelectronic element. The pairs of microelectronic elements can be fully spaced apart from one another in a horizontal direction parallel to the first surface of the substrate. Each lower microelectronic element can have a front surface facing the first surface of the substrate and a plurality of contacts at the front surface. A surface of each of the upper microelectronic elements can at least partially overlie a rear surface of the lower microelectronic element in its pair. The microelectronic package can also include electrical connections extending from at least some of the contacts of each lower microelectronic element to at least some of the terminals.

Heat Sink Adaptor

An adaptor is provided for use with the heat sink, said heat sink comprising a base for contacting a heat source and a plurality of protrusions extending from said base. The adaptor itself comprises a base and a structure projecting therefrom. The structure is arranged to mate with one or more protrusions on the heat sink to enable heat transfer by conduction from the heat sink to the adaptor.

Chip-on-film packages and device assemblies including the same

Chip-on-film packages are provided. A chip-on-film package includes a film substrate having a first surface and a second surface opposite to each other, a semiconductor chip on the first surface, and a thermal deformation member adjacent to the second surface. The thermal deformation member has a construction that causes its shape to transform according to a temperature. Related devices and device assembles are also provided.

Thermal substrate

An organic substrate capable of providing effective heat transfer through its entire thickness by the use of parallel, linear common thermally conductive openings that extend through the substrate, the substrate having thin dielectric layers bonded together to form an integral substrate structure. The structure is adapted for assisting in providing cooling of high temperature electrical components on one side by effectively transferring heat from the components to a cooling structure positioned on an opposing side. Methods of making the substrate are also provided, as is an electrical assembly including the substrate, component and cooling structure.

System for Using Active and Passive Cooling for High Power Thermal Management

A cooling system is disclosed that includes a substrate having a metallic face, at least one microporous wick formation in thermal communication with the metallic face, and a liquid delivery head positioned in complementary opposition to the metallic face, the liquid delivery head having at least one nozzle for directing a liquid towards the metallic face.

Three dimensional semiconductor assembly board with bump/flange supporting board, coreless build-up circuitry and built-in electronic device

A semiconductor assembly board includes a supporting board, a coreless build-up circuitry and a built-in electronic device. The supporting board includes a bump, a flange and a via hole in the bump. The built-in electronic device extends into the via hole and is electrically connected to the build-up circuitry. The build-up circuitry extends from the flange and the built-in electronic device and provides signal routing for the built-in electronic device. The supporting board provides mechanical support, ground/power plane and heat sink for the coreless build-up circuitry.

Fabrication method of packaging substrate having through-holed interposer embedded therein

A packaging substrate having a through-holed interposer embedded therein and a fabrication method of the packaging substrate are provided, where the packaging substrate includes: a molding layer having opposite first and second surfaces; a through-holed interposer embedded in the molding layer and flush with the second surface; a redistribution-layer structure embedded in the molding layer and disposed on the through-holed interposer and having a plurality of electrode pads exposed from the first surface of the molding layer; and a built-up structure disposed on the second surface of the molding layer and electrically connected to the through-holed interposer.

Heat sinking plate

Provided is a heat sinking plate, the plate formed with a square-shaped opening of a predetermined length when viewed from the other direction of a rectangular metal plate by erecting four triangles obtained by diagonally and crossly cutting a square of a predetermined length to one direction of the metal plate at a predetermined first angle relative to the metal plate.

Bump-On-Leadframe Semiconductor Package With Low Thermal Resistance

In a bump-on-leadframe semiconductor package a metal bump formed on a integrated circuit die is used to facilitate the transfer of heat generated in a semiconductor substrate to a metal heat slug and then to an external mounting surface. A structure including arrays of thermal vias may be used to transfer the heat from the semiconductor substrate to the metal bump

Heat dissipation device

A heat dissipation device includes a fan and a heat sink located at the air outlet of the fan. The heat sink includes a first fin set arranged on a side portion of the air outlet, a second fin set arranged on a central portion of the air outlet and a third fin set. The first fin set includes a plurality of first fins with a first passage is defined between each two neighboring first fins. The second fin set includes a plurality of second fins with a second passage defined between each two neighboring second fins, a width of the second passage is less than that of the first passage. The third fin set includes a plurality of third fins. Each third fin is arranged between two neighboring first fins and divides an outer portion of the first passage away from the outlet of the fan into two third passages.

Heat dissipation device

A heat dissipation device includes a fan and a heat sink located at the air outlet of the fan. The heat sink includes a first fin set arranged at a central portion of the air outlet, and two second fin sets respectively arranged at a side portion of the air outlet. The first fin set includes a plurality of first fins with a first passage defined between each two neighboring first fins. Each of the second fin sets includes a plurality of second fins with a second passage defined between each two neighboring second fins. Each of the second fin sets defines an undercut near the air outlet of the fan. The first passages communicate with the central portion of the air outlet of the fan. Each of the undercuts of the second fin sets communicates with corresponding side portion and corresponding second passage.

Thermally Enhanced Structure for Multi-Chip Device

A multi-chip semiconductor device comprises a thermally enhanced structure, a first semiconductor chip, a second semiconductor chip, an encapsulation layer formed on top of the first semiconductor chip and the second semiconductor chip. The multi-chip semiconductor device further comprises a plurality of thermal vias formed in the encapsulation layer. The thermally enhanced structure comprises a heat sink block attached to a first semiconductor die. The heat sink block may further comprise a variety of thermal vias and thermal openings. By employing the thermal enhanced structure, the thermal performance of the multi-chip semiconductor device can be improved.

Laminated heat sinks

An apparatus includes a heat sink with a complex 3D structure. The heat sink includes a stack of metal layers. The metal layers are mechanically connected together and being separated by physical interface regions. The stack has array of channels for carrying fluid through the stack. Each channel of the array has a lateral surface formed by portions of more than one of the metal layers.

Semiconductor device including cladded base plate

A semiconductor device includes a semiconductor chip coupled to a substrate and a base plate coupled to the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure.

Stacked semiconductor device

Provided is a stacked semiconductor device ( 50 ) in which a semiconductor package ( 5 ) is stacked via connection terminals ( 8 ) on a semiconductor package ( 1 ), including a heat dissipating member ( 10 ) which is disposed between the semiconductor packages ( 1, 5 ), is brought into thermal contact with both of the packages ( 1, 5 ), and hangs over whole outer peripheral portions of the package ( 5 ). Such a structure causes heat generated from the package ( 5 ) to be released by heat dissipation into air above the package ( 5 ), heat dissipation into the air below the semiconductor package ( 5 ), heat transfer via the heat dissipating member ( 10 ) and a semiconductor element ( 3 ) to a first wiring substrate ( 2 ), heat transfer via the connection terminals ( 8 ) to the first wiring substrate ( 2 ), and heat dissipation via the heat dissipating member ( 10 ) into the air, thereby enhancing a temperature reduction effect of the semiconductor element.

Integrated circuit packaging system with encapsulation and method of manufacture thereof

A method of manufacture of an integrated circuit packaging system includes: providing a substrate having a substrate first side and a substrate second side opposite the substrate first side; attaching a base integrated circuit to the substrate first side; attaching a mountable integrated circuit to the substrate second side; attaching a via base to the substrate second side adjacent the mountable integrated circuit; forming a device encapsulation surrounding the via base and the mountable integrated circuit; and forming a via extension through the device encapsulation and attached to the via base, the via extension exposed from the device encapsulation.

On-Chip Heat Spreader

A three dimensional (3D) stacked chip structure with chips having on-chip heat spreader and method of forming are described. A 3D stacked chip structure comprises a first die having a first substrate with a dielectric layer formed on a front surface. One or more bonding pads and a heat spreader may be simultaneously formed in the dielectric layer. The first die is bonded with corresponding bond pads on a surface of a second die to form a stacked chip structure. Heat generated in the stacked chip structure may be diffused to the edges of the stacked chip structure through the heat spreader.

3d integrated electronic device structure including increased thermal dissipation capabilities

A microelectronic device structure including increased thermal dissipation capabilities. The structure including a three-dimensional (3D) integrated chip assembly that is flip chip bonded to a substrate. The chip assembly including a device substrate including an active device disposed thereon. A cap layer is phsyically bonded to the device substrate to at least partially define a hermetic seal about the active device. The microelectronic device structure provides a plurality of heat dissipation paths therethrough to dissipate heat generated therein.

Stub minimization for wirebond assemblies without windows

A microelectronic assembly can include a circuit panel having first and second surfaces and panel contacts at each surface, and first and second microelectronic packages having terminals mounted to the panel contacts at the first and second surfaces, respectively. The circuit panel can electrically interconnect terminals of the first package with corresponding terminals of the second package. Each package can include a substrate having first and second surfaces, a microelectronic element, conductive structure extending above a front face of the microelectronic element, and parallel columns of terminals at the second surface. The terminals of each package can include first terminals in a central region of the respective second surface and configured to carry address information usable by circuitry within the package to determine an addressable memory location within the respective microelectronic element. Each central region can have a width within three and one-half times a minimum pitch between adjacent terminals.

Power management applications of interconnect substrates

Various applications of interconnect substrates in power management systems are described.

THERMAL EXPANSION-ENHANCED HEAT SINK FOR AN ELECTRONIC ASSEMBLY

A heat sink and method of fabrication are provided for removing heat from an electronic component(s). The heat sink includes a heat sink base and frame. The base has a first coefficient of thermal expansion (CTE), and includes a base surface configured to couple to the electronic component to facilitate removal of heat. The frame has a second CTE, and is configured to constrain the base surface in opposing relation to the electronic component, wherein the first CTE is greater than the second CTE. At least one of the heat sink base or frame is configured so that heating of the heat sink base results in a compressive force at the base surface of the heat sink base towards the electronic component that facilitates heat transfer from the electronic component. A thermal interface material is disposed between the base surface and the electronic component. 1. A method of fabricating a thermal expansion-enhanced heat sink comprising:providing a heat sink base comprising a base surface configured to couple to a surface of a heat-generating electronic component to facilitate removal of heat from the heat-generating electronic component, the heat sink base having a first coefficient of thermal expansion; andproviding a frame configured to couple to the heat-generating electronic component and constrain the base surface of the heat sink base in opposing relation to the surface of the heat-generating electronic component, the frame having a second coefficient of thermal expansion, wherein the first coefficient of thermal expansion of the heat sink base is greater than the second coefficient of thermal expansion of the frame, and wherein at least one of the heat sink base or the frame is configured so that heating of the heat sink base expands the heat sink base relative to the frame and results in a force component at the base surface of the heat sink base towards the surface of the heat-generating electronic component that facilitates heat transfer from the surface of the heat- ...

Chip carriers, semiconductor devices including the same, semiconductor packages including the same, and methods of fabricating the same

Chip carriers are provided. The chip carrier includes a carrier body having a cavity therein and at least one conductive through silicon via (TSV) penetrating the carrier body under the cavity. The cavity includes an uneven sidewall surface profile. The at least one conductive through silicon via (TSV) is exposed at a bottom surface of the carrier body opposite to the cavity. Related methods are also provided.

Semiconductor die assemblies with enhanced thermal management, semiconductor devices including same and related methods

A semiconductor die assembly comprises a plurality of semiconductor dice in a stack. Another semiconductor die is adjacent to the stack and has a region, which may comprise a relatively higher power density region, extends peripherally beyond the stack. Conductive elements extend between and electrically interconnect integrated circuits of semiconductor dice in the stack and of the other semiconductor die. Thermal pillars are interposed between semiconductor dice of the stack, and a heat dissipation structure, such as a lid, is in contact with an uppermost die of the stack and the high power density region of the other semiconductor die. Other die assemblies, semiconductor devices and methods of managing heat transfer within a semiconductor die assembly are also disclosed.

Thermally enhanced packaging structure

A thermally enhanced packaging structure includes a chip carrier; a high power chip disposed on the chip carrier; a molding compound covering the high power chip; a heat dissipating layer disposed on the molding compound, wherein the heat dissipating layer comprises a plurality of carbon nanocapsules (CNCs); and a non-fin type heat dissipating device, disposed either on the heat dissipating layer or between the molding compound and the heat dissipating layer. The molding compound can also comprise a plurality of CNCs.

Heat-dissipating fins

The present invention relates to a heat sink of a large area, in which a heat-dissipating body is further provided in its limited space. The method for manufacturing a fin includes the steps of providing a fin, cutting the fin to form a foldable piece thereon, folding back the foldable piece to be overlapped on the fin and form an accommodating hole, and punching the folded piece and the fin to form two overlapped through-holes. The fin, the heat-dissipating body and heat pipes are assembled together to obtain the heat sink. Since the fins and the heat-dissipating body dissipate the heat of a heat-generating element simultaneously, the heat-dissipating efficiency of the heat sink can be improved.

Light emitting diodes and substrates

A thin layer substrate has a plurality of micron sized electrically conductive whisker components which are arranged in parallel and extending from one surface of the substrate to another surface to provide electrically conductive paths though the substrate. Such a substrate may be usable for micron sized LEDs.

Power Conversion Device

A power conversion device includes: a cooling base 5 in which a flow passage 51 through which a cooling medium flows is formed and an opening portion 50 which is communicated with the flow passage 51 is formed; a power module 1 ; and a flow passage control portion 16 b . The power module 1 has a bottomed cylindrical portion 13 a in which a power semiconductor element is housed and which is inserted into the flow passage 51 through the opening portion 50 , a flange portion 13 b which is formed on an opening of the cylindrical portion 13 a and is fixed to the cooling base 5 so as to close the opening portion 50 , and a group of radiator fins 144 which are mounted on an outer peripheral surface of the cylindrical portion 13 a with a gap of a predetermined distance formed between the flange portion 13 b and the group of radiator fins 144 . The flow passage control portion 16 b is arranged in a gap formed between the flange portion 13 b and the group of radiator fins 144 , and introduces the cooling medium into the group of radiator fins 144 while preventing the cooling medium from flowing into gaps 51 c.

SEMICONDUCTOR DEVICE INCLUDING CLADDED BASE PLATE

A semiconductor device includes a semiconductor chip joined with a substrate and a base plate joined with the substrate. The base plate includes a first metal layer clad to a second metal layer. The second metal layer is deformed to provide a pin-fin or fin cooling structure. The second metal layer has a sub-layer that has no pins and no pin-fins. The first metal layer has a first thickness and the sub-layer has a second thickness. The ratio between the first thickness and the second thickness is at least 4:1. 1. A semiconductor device comprising:a semiconductor chip joined with a substrate; the second metal layer comprises a sub-layer that has no pins and no pin-fins;', 'the first metal layer comprises a first thickness;', 'the sub-layer comprises a second thickness; and', 'the ratio between the first thickness and the second thickness is at least 4:1., 'a base plate joined with the substrate, the base plate comprising a first metal layer clad to a second metal layer, the second metal layer deformed to provide a pin-fin or fin cooling structure, wherein'}2. The semiconductor device of claim 1 , wherein the ratio between the first thickness and the second thickness is at least 10:1.3. The semiconductor device of claim 1 , wherein the second thickness is between 0.2 mm and 0.5 mm.4. The semiconductor device of claim 1 , wherein the first metal layer comprises copper and the second metal layer comprises aluminum.5. The semiconductor device of claim 1 , wherein the first metal layer has a thickness between 2.5 mm and 10 mm.6. The semiconductor device of claim 1 , further comprising:a third metal layer clad to the first metal layer opposite the second metal layer.7. The semiconductor device of claim 6 , wherein the third metal layer has a thickness between 1 μm and 0.1 mm.8. The semiconductor device of claim 6 , wherein the third metal layer comprises one of silver and palladium.9. The semiconductor device of claim 6 , wherein the substrate is one of diffusion soldered ...

Cooling device for electronic component and method for manufacturing the same

A cooling device for an electronic component, includes: a metal pipe; a metal foil provided on an external surface of the metal pipe; and a thermally-cured resin layer that bonds the external surface of the metal pipe and the metal foil together.

Semiconductor Device Assembly Utilizing a DBC Substrate

A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction. 157-. (canceled)5868-. (canceled)69. An assembly comprising: first and second conductive layers insulated from one another, said first conductive layer having a depression therein and a rim at least partially surrounding a bottom surface of said depression;', 'a semiconductor die situated in said depression and having an electrode electrically connected to said bottom surface of said depression;, 'first and second semiconductor devices, each of said first and second semiconductor devices comprisinga support substrate including a patterned conductive layer electrically connecting said first semiconductor device and said second semiconductor device, said first and second semiconductor devices each being electrically and mechanically connected to said patterned conductive layer.70. The assembly of claim 69 , wherein said patterned conductive layer is electrically connecting said rim of said first semiconductor device and said rim of said second semiconductor device.71. The assembly of claim 69 , wherein said support substrate further comprises a bottom conductive layer that is insulated from said patterned conductive layer.72. The assembly of claim 69 , a heat sink or plate mechanically and thermally connected to said second conductive layer of each of said first and second semiconductor devices.73. The assembly of claim 69 , comprising an EMI screening plate situated over said first and second ...

Semiconductor having integrally-formed enhanced thermal management

A semiconductor structure and method of manufacturing that has integrally-formed enhanced thermal management. During operation of a semiconductor device, electron flow between the source and the drain creates localized heat generation. A containment gap is formed by selectively removing a portion of the back side of the semiconductor device substrate directly adjacent to a localized heat generation area. A thermal management material is filled in the containment gap. This thermal management material enhances the thermal management of the semiconductor device by thermally coupling the localized heat generation area to a heat sink. The thermal management material may be a Phase Change Material (PCM) having a heat of fusion effective for absorbing heat generated in the localized heat generation area by the operation of the semiconductor device for reducing a peak operating temperature of the semiconductor device.

Dual Heat Sinks For Distributing A Thermal Load

Dual heat sinks, apparatuses, and methods for installing a dual heat sink for distributing a thermal load are provided. Embodiments include a top base to couple with a first integrated circuit of a first board and to receive a first thermal load from the first integrated circuit; a bottom base to couple with a second integrated circuit of a second board and to receive a second thermal load from the second integrated circuit; and a thermal dissipating structure coupled between the top base and the bottom base, the thermal dissipating structure to receive and distribute the first thermal load and the second thermal load from the top base and the bottom base; wherein a height of the thermal dissipating structure is adjustable so as to change a distance separating the top base and the bottom base.

Semiconductor Package with Conductive Heat Spreader

A semiconductor package that includes a semiconductor die and a heat spreader thermally coupled to the semiconductor and disposed at least partially within the molded housing of the package.

Semiconductor device

A semiconductor device includes a structure in which a semiconductor element (chip) is mounted in a cavity formed in a wiring board with an adhesive interposed between the chip and a bottom surface of the cavity, and electrode terminals of the chip are connected via wires to wiring portions formed on the board around the cavity. The chip is mounted in close contact with a side wall of the cavity, the side wall being near a region where a wiring for higher frequency compared with other wirings within the wiring portion is formed. A recessed portion is provided in a region of the bottom surface of the cavity, and a thermal via extending from the bottom surface of the recessed to the outside of the board is provided, the region being near a portion where the chip is in close contact.

Molded interposer package and method for fabricating the same

The invention provides a molded interposer package and a method for fabricating the same. The molded interposer package includes a plurality of metal studs. A molding material encapsulates the metal studs leaving the bottom surfaces of the metal studs exposed. A first chip is disposed on the molding material, connecting to the top surfaces of the metal studs. A plurality of solder balls connects and contacts to the bottom surfaces of the metal studs.

Heat dissipating apparatus

A heat dissipating apparatus includes a base, a first fin assembly, a second fin assembly, and at least one heat pipe. The base includes a top surface and a bottom surface, the bottom surface makes contact with an electronic heat-generating component. The first fin assembly is disposed on the top surface of the base. The second fin assembly is separate from the first fin assembly. The at least one heat pipe includes a first contacting portion in contact with the base and a second contacting portion in contact with the second fin assembly.

Terminal Box

A plurality of terminal plates are arranged in a row in the interior of a box body. Neighboring terminal plates are electrically connected by a diode. The diode is provided with a first terminal part that is laid on, soldered to, and electrically connected to the first terminal plate. A slit is provided formed along the outer perimeter of a region on which the first terminal part is laid on the first terminal plate. 1. A terminal box , comprising:a box body;a plurality of terminal plates arranged in a row in the interior of the box body; anda diode for electrically connecting the terminal plates, whereinthe diode has a first terminal part, the first terminal part being laid on, soldered to, and thereby electrically connected to a first terminal plate; andthe first terminal plate has a slit formed along an outer perimeter of a region on which the first terminal part is laid.2. The terminal box according to claim 1 , wherein the first terminal plate comprises a positioning piece capable of making contact with the first terminal part and thereby determining the position at which the first terminal part is laid on the first terminal plate.3. The terminal box according to claim 1 , whereinthe diode comprises a body part and a second terminal part, the second terminal part being electrically connected to a second terminal plate; andthe second terminal plate has an anchoring part to which the second terminal part is soldered, and a linking part for linking the anchoring part to the body part so as to allow relative displacement.4. The terminal box according to claim 3 , whereinthe second terminal plate comprises a metal plate; andthe linking part comprises a band-plate portion formed by being punched out of the second terminal plate along with the anchoring part.5. The terminal box according to claim 4 , wherein the band-plate portion comprises a bent part claim 4 , the bent part being bent and deformed in the direction of band thickness. 1. Field of the InventionThe ...

Transmission line transition having vertical structure and single chip package using land grip array coupling

An apparatus for a single chip package using Land Grid Array (LGA) coupling is provided. The apparatus includes a multi-layer substrate, at least one integrated circuit chip, and a Printed Circuit Board (PCB). The a multi-layer substrate has at least one substrate layer, has at least one first chip region and at least one second chip region in a lowermost substrate layer, configures a transmission line transition of a vertical structure for transmitting a signal from at least one integrated circuit chip coupled in the first chip region in a coaxial shape or in a form of a Co-Planar Waveguide guide (CPW), and has an LGP coupling pad for connecting with a Printed Circuit Board (PCB) in the lowermost layer. The at least one integrated circuit chip is coupled in the first chip region and the second chip region. The PCB is connected with the multi-layer substrate using the LGA coupling via the LGA coupling pad.

Apparatus for secure device to edge of plate

Apparatuses to secure surface mount heat emitting device with back heat spreader to edge of a heat dissipate plate in order to conduct heat from said heat emitting device to heat dissipate plate directly. Each apparatus comprising of adapter PCB with device mounting pads on surface and opening at location of back heat spreader to expose it for contact access; heat dissipate plate has contact stub to make contact with said back heat spreader and bounding means to bound together said heat dissipate plate and PCB.

Semiconductor package

A semiconductor package includes a substrate including a mounting surface having a plurality of ground pads, a semiconductor chip disposed on the mounting surface, a conductive connection part connected to at least one of the plurality of ground pads and having a greater width at a center than at an end, a molding member exposing a top surface of the conductive connection part while wrapping the mounting surface, the conductive connection part and the semiconductor chip, and a heat slug disposed on the molding member and connected to the top surface of the conductive connection part.

Heat sink assembly

A heat sink assembly includes a heat sink, a base, and a number of fasteners. The heat sink includes a bottom plate defining a number of holes. The base is mounted to a bottom of the bottom plate. A number of through holes aligning with the holes of the bottom plate are defined in the base. A number of tapered guiding surfaces is formed on a bottom of the base. Each guiding surface bounds a corresponding one of the through holes. A diameter of each guiding surface gradually increases in a downward direction, facilitates the entry of securing screws. The fasteners are mounted to the heat sink. Bottoms of the fasteners are respectively extended through the holes of the heat sink and received in the through holes of the base. An internally-threaded hole is defined in a bottom of each fastener.

Semiconductor package having heat spreader and method of forming the same

A semiconductor chip and a first heat dissipation pattern are mounted on a substrate. The first heat dissipation pattern has an opening therein and exposes the semiconductor chip therethrough. A second heat dissipation pattern including a thermal interface material (TIM) is interposed between a side surface of the semiconductor chip and the first heat dissipation pattern.

Semiconductor package with integrated substrate thermal slug

To reduce the thermal stresses that may be caused by a difference in thermal expansion coefficients between a molded casing and an active side of a semiconductor device embedded in the molded casing, and thus reduce the number of corresponding failures caused by the thermal stresses, the active side of the semiconductor device is arranged face-down, towards a substrate supporting the semiconductor device. The semiconductor device includes a through via that electrically connects the active side of the semiconductor device to a passive side of the semiconductor device. A wire bond electrically connects the passive side of the semiconductor device to the substrate. To increase the dissipation of heat generated in the semiconductor device, a thermally conductive slug may be disposed in the substrate, and the active side of the semiconductor device may be attached to the thermally conductive slug.

Heat exchanger backing plate and method of assembling same

A backing plate for joining a heat removal device to a heat source. The backing plate can include a planar plate region having a first face and a second face opposite the first face. The backing plate can also include at least one boss projecting from the first face and having an opening therein for receiving a fastener.

Surface acoustic wave device

A surface acoustic wave device having high heat radiation performance is provided. A surface acoustic wave device includes a piezoelectric substrate, IDT electrodes, a cover, and wiring lines. The IDT electrodes are arranged on a main surface of the piezoelectric substrate. The cover is joined to the main surface. The wiring lines extend to join portions of the main surface and the cover. The cover is provided with through-holes facing the wiring lines, respectively. The surface acoustic wave device further includes under-bump metals arranged in the through-holes, respectively, and bumps arranged on the under-bump metals, respectively. In a plan view, each of the under-bump metals is provided in a region larger than a joint portion of each of the under-bump metals and the corresponding one of the bumps

Semiconductor Packages with Integrated Heat Spreaders

One implementation of present disclosure includes a semiconductor package stack. The semiconductor package stack includes an upper package coupled to a lower package by a plurality of solder balls. The semiconductor package stack also includes a lower active die situated in a lower package substrate in the lower package. The lower active die is thermally coupled to a heat spreader in the upper package by a thermal interface material. An upper active die is situated in an upper package substrate in the upper package, the upper package substrate being situated over the heat spreader. The thermal interface material can include an array of aligned carbon nanotubes within a filler material. The heat spreader can include at least one layer of metal or metal alloy. Furthermore, the heat spreader can be connected to ground or a DC voltage source. The plurality of solder balls can be situated under the heat spreader.

Power Semiconductor Module System with Undercut Connection

A semiconductor module system includes a first semiconductor module and a second semiconductor module. The first semiconductor module has a first housing and a first base plate. The second semiconductor module has a second housing and a second base plate. The first base plate includes a first fitting segment fitted with a semiconductor component, and a first adjustment segment separated from the first fitting segment. The first adjustment segment also has a first adjustment device. The second base plate has a second adjustment device. The first semiconductor module and the second semiconductor module are configured to be positioned relative to one another using the first adjustment device and the second adjustment device so as to form at least one undercut connection. The first fitting segment and the first adjustment segment are connected to the first housing in a captive manner even when the undercut connection is not formed. 1. A semiconductor module system , comprising:a first semiconductor module having a first housing and a first base plate, the first base plate having a first fitting segment fitted with a semiconductor component and a first adjustment segment separated from the first fitting segment, the first adjustment segment having a first adjustment device; anda second semiconductor module having a second housing and a second base plate, the second base plate having a second adjustment device,wherein the first semiconductor module and the second semiconductor module are configured to be positioned relative to one another using the first adjustment device and the second adjustment device so as to form at least one undercut connection,wherein the first fitting segment and the first adjustment segment are connected to the first housing in a captive manner even when the undercut connection is not formed.2. The semiconductor module system as claimed in claim 1 , wherein the first adjustment device comprises a projection of the first adjustment segment and has ...

Flexible circuit board

A flexible circuit board includes a base film formed by a metallic material, a first protective film formed on a first surface of the base film, and a circuit pattern adhered to the first protective film through an adhesive film. Projections and recesses for heat release are formed on a second surface that is a surface on the opposite side of the first surface of the base film.

Heat dissipation device

An exemplary heat dissipation device includes a heat pipe and a fin unit. The heat pipe includes an evaporation section and a condensing section formed at opposite ends thereof, respectively. The fin unit includes plural stacked parallel fins. Each of the fins defines a through hole therein for receiving the condensing section of the heat pipe. A flange extends from a periphery of the through hole. The flange defines two slits to divide the flange into two separate portions. The slits communicate with the through hole. A compressible structure is formed in each fin at opposite sides of the through hole. The compressible structure is aligned with the slits such that when the fin is compressed along a direction transverse to the alignment, the compressible structure is compressed and the separate portions of the flange move toward each other and closely contact the condensing section of the heat pipe.