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Небесная энциклопедия

Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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Поддерживает ввод нескольких поисковых фраз (по одной на строку). При поиске обеспечивает поддержку морфологии русского и английского языка
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Применить Всего найдено 15. Отображено 15.
08-06-2005 дата публикации

High-indium component gallium arsenic/indium gallium arsenic quantum pit structure and preparation method thereof

Номер: CN0001624996A
Автор: NIU ZHICHUAN, XU XIAOHUA, NI HAIQIAO, ZHICHUAN NIU, XIAOHUA XU, HAIQIAO NI
Принадлежит:

A high indium component gallium arsenic/ indium gallium arsenic quantum trap structure, including: a transmitting layer, forming a full crystal surface on the substrate surface; a first barrier layer, forming the energy barrier to the current carrier, and the first barrier layer is set above the transmitting layer; a quantum trap layer, limiting the luminous current carrier in the trap layer; a secondary barrier layer, forming the energy barrier corresponding to the first barrier layer, and the secondary barrier layer is set above the quantum trap layer; a surface covering protective layer, protecting the quantum trap structure and preparing the contact electrode, and the protective layer is set on the secondary barrier layer.

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Номер записи: 1
19-02-2014 дата публикации

MBE method for growing locating quantum dots on patterned substrate through AFM nanoimprinting

Номер: CN103594334A
Автор: ZHA GUOWEI, NIU ZHICHUAN, NI HAIQIAO, SHANG XIANGJUN, HE ZHENHONG
Принадлежит:

The invention provides an MBE method for growing locating quantum dots on a patterned substrate through AFM nanoimprinting. The method includes the first step of taking a substrate, the second step of growing a buffer layer on the substrate, the third step of utilizing an AFM with a nanoimprinting function to form nano-holes of a periodic array in the buffer layer, the fourth step of growing a nano buffer layer on the nano-holes of the periodic array and the buffer layer, the fifth step of growing the locating quantum dots at the positions corresponding to the nano-holes in the nano buffer layer, and the sixth step of growing a covering layer on the locating quantum dots and the nano buffer layer to complete preparation. Through the MBE method, precision of graphs is high, mechanical damage is little, and photoelectrical properties of the quantum dots are good.

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Номер записи: 2
16-05-2023 дата публикации

Novel double-sided growth molecular beam epitaxy equipment

Номер: CN116121863A
Автор: DING YING, NI HAIQIAO, ZHU BINGBING, LIU XIAONING, CHEN YISHU
Принадлежит:

The invention discloses novel double-sided growth molecular beam epitaxy equipment. The equipment comprises a furnace body, a supporting device, a spraying device and a sampling device, the furnace body is provided with a plurality of laser heating holes and a gas source channel, the laser heating holes and the gas source channel are respectively communicated with the interior of the furnace body, the supporting device is located in the middle of the interior of the furnace body and used for supporting a growth substrate, and the spraying devices are arranged in the furnace body and located at the top and the bottom of the supporting device. And the sampling device is used for placing and taking the growth substrate. According to the invention, double-sided growth of the growth substrate can be realized, and the epitaxial growth efficiency is improved.

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Номер записи: 3
12-02-2014 дата публикации

Electron beam exposure method for improving uniformity of grating structure

Номер: CN103576221A
Автор: WANG LIJUAN, YU YING, ZHA GUOWEI, XU JIANXING, NI HAIQIAO, NIU ZHICHUAN
Принадлежит:

The invention discloses a method for improving the uniformity of a grating, and particularly relates to an electron beam exposure method for improving the uniformity of a grating structure. The method comprises the steps that electron beam glue coats a wafer, and the wafer coated with the electron beam glue is placed in a baking oven to be prebaked; trapezoid compensatory figures are arranged around the grating structure by utilizing a layout design tool; electron beam exposure and development are carried out on the wafer to finish the grating structure containing the trapezoid compensatory figures. By utilizing the compensatory figures, the method weakens the influence of the proximity effect in the electron beam exposure, and the uniformity of nanometer-scale grating exposure is increased. Instead of weakening the proximity effect by changing the exposure dose and size of a figure, the proximity effect is weakened by increasing the compensatory figures around the figure in order to improve ...

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Номер записи: 4
19-02-2014 дата публикации

Positioning nanoimprint lithography system for preparation of patterned substrate by utilizing AFM (Atomic Force Microscope) probe

Номер: CN103592818A
Автор: ZHA GUOWEI, NIU ZHICHUAN, NI HAIQIAO, SHANG XIANGJUN, HE ZHENHONG
Принадлежит:

The invention provides a positioning nanoimprint lithography system for preparation of a patterned substrate by utilizing an AFM (Atomic Force Microscope) probe. The positioning nanoimprint lithography system comprises an ultrahigh vacuum chamber compatible with other vacuum growth equipment, an AFM fixed at the bottom of the ultrahigh vacuum chamber, a substrate holder fixing device fixed on the AFM, a substrate holder positioned in a hole formed in the middle of the substrate holder fixing device, a mechanical arm fixed on the ultrahigh vacuum chamber and used for transmitting of the substrate holder, a probe replacement cavity fixed in the side wall of the ultrahigh vacuum chamber and used for replacement of the probe of the AFM, and a monitoring system used for control to the preparation of the imprinted patterned substrate by the AFM. The positioning nanoimprint lithography system has the characteristics of high patterned substrate precision (more than 50 nm), small extension damage ...

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Номер записи: 5
04-01-2012 дата публикации

Molecular beam epitaxial method for growing non-antiphase domain gallium arsenide film on germanium substrate

Номер: CN0101624725B
Автор: WANG PENGFEI, WU DONGHAI, WU BINGPENG, XIONG YONGHUA, ZHAN FENG, HUANG SHESONG, NI HAIQIAO, NIU ZHICHUAN, PENGFEI WANG, DONGHAI WU, BINGPENG WU, YONGHUA XIONG, FENG ZHAN, SHESONG HUANG, HAIQIAO NI, ZHICHUAN NIU
Принадлежит:

The method discloses a molecular beam epitaxial method for growing a non-antiphase domain gallium arsenide film on a germanium substrate. The method comprises the followings steps of : step one, selecting the Ge substrate of which the (100) plane deviates 6 to 9 degrees from the <111> direction; step two, performing the degassing deoxidation and the annealing treatment of the Ge substrate; and step three, exposing the Ge substrate undergoing the annealing treatment under an environment of As vapor for a period of time, and growing the non-antiphase domain GaAs film on the Ge substrate at a temperature of between 300 and 650 DEG C. Tests show that the surface roughness of the GaAs film grown by the method is only 0.718nm, namely the generation of the antiphase domain is successfully inhibited, and the crystal mass of the film is better than the best result in the present world.

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Номер записи: 6
17-06-2009 дата публикации

Method for producing air-gap structure by selective etching aluminum arsenide using dilute hydrochloric acid

Номер: CN0101456531A
Автор: LI WENBING, HAN QIN, QIN LONG, YANG XIAOHONG, NI HAIQIAO, DU YUN, ZHU BIN, JU YANLING, WENBING LI, QIN HAN, LONG QIN, XIAOHONG YANG, HAIQIAO NI, YUN DU, BIN ZHU, YANLING JU
Принадлежит:

The invention relates to a method for manufacturing an air gap structure by using dilute hydrochloric acid to selectively corrode an aluminum arsenide sacrificial layer, which comprises the following steps: a, growing a structure with the aluminum arsenide sacrificial layer on a gallium arsenide substrate by using a molecular beam epitaxial technique, and arranging a distributed Bragg reflector consisting of gallium arsenide and aluminum gallium arsenide on the aluminum arsenide sacrificial layer; b, photoetching a required graph on the surface of a wafer, non-selectively and vertically corroding a table top on the surface of the wafer, and exposing the side wall of the aluminum arsenide sacrificial layer; c, selectively corroding the aluminum arsenide sacrificial layer on the wafer by dilute hydrochloric acid in a thermostatic water bath; d, transferring the selectively corroded wafer to a beaker filled with methanol or acetone by a special polyfluorin porcelain perforated ladle, and cleaning ...

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Номер записи: 7
21-09-2011 дата публикации

Method for growing varied buffer layer on substrate

Номер: CN0102194671A
Автор: JIFANG HE, XIANGJUN SHANG, HAIQIAO NI, HAILI WANG, MIFENG LI, YAN ZHU, LIJUAN WANG, YING YU, ZHENGHONG HE, YINGQIANG XU, ZHICHUAN NIU, HE JIFANG, SHANG XIANGJUN, NI HAIQIAO, WANG HAILI, LI MIFENG, ZHU YAN, WANG LIJUAN, YU YING, HE ZHENGHONG, XU YINGQIANG, NIU ZHICHUAN
Принадлежит:

The invention discloses a method for growing a varied buffer layer on a substrate. The method comprises the following steps: 1, preparing a substrate; 2, growing a buffer layer on the substrate; 3, growing a varied buffer layer on the buffer layer; 4, growing an epitaxial layer on the varied buffer layer to form a chip and 5, finally cooling the chip.

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Номер записи: 8
24-11-2004 дата публикации

气态束源炉瞬态开关控制真空装置

Номер: CN0001548576A
Автор: NIU ZHICHUAN, NI HAIQIAO, XU XIAOHUA, ZHICHUAN NIU, HAIQIAO NI, XIAOHUA XU, 牛智川
Принадлежит:

The vacuum unit for gaseous beam source furnace includes one ultrahigh vacuum cavity of stainless steel, one first pneumatic valve connected to one end of the vacuum cavity, one gaseous beam source furnace inside the vacuum cavity, one second pneumatic valve connected to the middle section of the vacuum cavity, one vacuum pump connected to the second pneumatic valve, one first manual valve connected to the other end of the vacuum cavity, one mass flow meter connected to the manual valve, one second manual valve connected to the mass flow meter, one gas pipeline connected between the mass flow meter and the second manual valve, one gas container connected to the second manual valve, one high vacuum pump connected to the vacuum cavity, and one computer for controlling the mass flow meter and valves to realize the switching of gas flow direction.

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Номер записи: 9
27-04-2011 дата публикации

Method for epitaxial growth of molecular beam of low-density InAs quantum dots

Номер: CN0102034909A
Автор: Niu Zhichuan, Ni Haiqiao, Wang Haili, He Jifang, Zhu Yan, Li Mifeng, Wang Pengfei, Huang Shesong, Xiong Yonghua
Принадлежит:

The invention discloses a method for epitaxial growth of a molecular beam of low-density InAs quantum dots, which comprises the following steps of: putting a GaAs substrate on a sample support, and introducing the GaAs substrate into a sample introduction room for baking; after baking, introducing the GaAs substrate into a preparation room, and degassing the GaAs substrate; introducing degassed GaAs substrate into a growth room, heating a heater of the GaAs substrate, and deoxidizing the GaAs substrate under the protection of As; cooling the heater of the GaAs substrate to the growth temperature, growing a GaAs buffer layer, and doping Si; growing a plurality of pairs of GaAs/AlGaAs distributed Bragg reflectors; reducing the growth temperature, and growing low-density quantum dots; growing an InGaAs(Sb) covering layer; growing coupled quantum dots to expand the wavelength; growing a doped GaAs layer; and manufacturing upper and lower electrodes. By using the method, the luminous efficiency ...

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Номер записи: 10
27-05-2015 дата публикации

Resonant tunneling diode based high-sensitivity detector with low dark current

Номер: CN104659145A
Автор: PEI KANGMING, NI HAIQIAO, ZHAN FENG, DONG YU, NIU ZHICHUAN
Принадлежит:

A resonant tunneling diode based high-sensitivity detector with low dark current comprises a substrate, an emitting electrode contact layer, an emitting region, an isolating layer, a double-potential-barrier structure, an absorption layer, a collector region, an upper electrode and a lower electrode, wherein the emitting electrode contact layer is manufactured on the substrate; the emitting region is manufactured on the emitting electrode contact layer, and a table board is formed on the other side of the emitting electrode contact layer; the isolating layer is manufactured on the emitting region; the double-potential-barrier structure is manufactured on the isolating layer; the absorption layer is manufactured on the double-potential-barrier structure; the collector region is manufactured on the absorption layer; the upper electrode is manufactured on the collector region; the lower electrode is manufactured on the table board on the other side of the emitting electrode contact layer.

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Номер записи: 11
27-05-2015 дата публикации

Resonant tunneling diode near-infrared detector based on II type energy band matching

Номер: CN104659146A
Автор: PEI KANGMING, NI HAIQIAO, ZHAN FENG, DONG YU, NIU ZHICHUAN
Принадлежит:

A resonant tunneling diode near-infrared detector based on II type energy band matching comprises a substrate, an emitting electrode contact layer, an emitting region, an isolating layer, a double-barrier structure, an absorbing layer, a collecting region, a top electrode and a bottom electrode, wherein the emitting electrode contact layer is manufactured on the substrate; the emitting region is manufactured on the emitting electrode contact layer, and a table board is formed on the other side of the emitting electrode contact layer; the isolating layer is manufactured on an emitting electrode; the double-barrier structure is manufactured on the isolating layer; the absorbing layer is manufactured on the double-barrier structure; the collecting region is manufactured on the absorbing layer; the top electrode is manufactured on the collecting region; the bottom electrode is manufactured on the table board on the other side of the emitting electrode contact layer. According to the resonant ...

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Номер записи: 12
15-08-2012 дата публикации

Method for growing varied buffer layer on substrate

Номер: CN0102194671B
Автор: JIFANG HE, XIANGJUN SHANG, HAIQIAO NI, HAILI WANG, MIFENG LI, YAN ZHU, LIJUAN WANG, YING YU, ZHENGHONG HE, YINGQIANG XU, ZHICHUAN NIU, HE JIFANG, SHANG XIANGJUN, NI HAIQIAO, WANG HAILI, LI MIFENG, ZHU YAN, WANG LIJUAN, YU YING, HE ZHENGHONG, XU YINGQIANG, NIU ZHICHUAN
Принадлежит:

The invention discloses a method for growing a varied buffer layer on a substrate. The method comprises the following steps: 1, preparing a substrate; 2, growing a buffer layer on the substrate; 3, growing a varied buffer layer on the buffer layer; 4, growing an epitaxial layer on the varied buffer layer to form a chip and 5, finally cooling the chip.

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Номер записи: 13
23-05-2023 дата публикации

Light quantum controlled NOT gate and implementation method thereof

Номер: CN116151382A
Автор: NIU ZHICHUAN, NI HAIQIAO, HU CHENGYONG, HUANG SHESONG, ZHANG JUN, SHANG XIANGJUN, LIU HANQING, LI SHULUN, DAI DEYAN, SU XIANGBIN
Принадлежит:

The invention provides a light quantum controlled NOT gate and an implementation method thereof. The implementation method comprises the following steps: copying control photons to an electron spin state by utilizing a microcavity; photons in the right-handed rotation state are input into the microcavity, so that the photons in the right-handed rotation state and the electron spinning state generate strong coupling and entanglement, and a first entanglement state, a first reflection state and a transmission state are obtained; the reflection state is input into a first half-wave plate and then converted into a left rotation state, and the left rotation state and the transmission state are combined to generate a first output light quantum state; inputting the signal photons into the microcavity, and enabling the signal photons and the electron spinning state to generate strong coupling and entanglement to obtain a second entanglement state and a second reflection state; generating a second ...

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Номер записи: 14
13-01-2010 дата публикации

Molecular beam epitaxial method for growing non-antiphase domain gallium arsenide film on germanium substrate

Номер: CN0101624725A
Автор: WANG PENGFEI, WU DONGHAI, WU BINGPENG, XIONG YONGHUA, ZHAN FENG, HUANG SHESONG, NI HAIQIAO, NIU ZHICHUAN, PENGFEI WANG, DONGHAI WU, BINGPENG WU, YONGHUA XIONG, FENG ZHAN, SHESONG HUANG, HAIQIAO NI, ZHICHUAN NIU
Принадлежит:

The method discloses a molecular beam epitaxial method for growing a non-antiphase domain gallium arsenide film on a germanium substrate. The method comprises the followings steps of : step one, selecting the Ge substrate of which the (100) plane deviates 6 to 9 degrees from the <111> direction; step two, performing the degassing deoxidation and the annealing treatment of the Ge substrate; and step three, exposing the Ge substrate undergoing the annealing treatment under an environment of As vapor for a period of time, and growing the non-antiphase domain GaAs film on the Ge substrate at a temperature of between 300 and 650 DEG C. Tests show that the surface roughness of the GaAs film grown by the method is only 0.718nm, namely the generation of the antiphase domain is successfully inhibited, and the crystal mass of the film is better than the best result in the present world.

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Номер записи: 15