PROCEDURE FOR THE PRODUCTION CELEBRATIONS OF A MEDIUM FOR THE CULTIVATION OF MICROORGANISMS.

Hydroxyphenyl cross-linked macromolecular network and applications thereof

ВОДНАЯ ЭМУЛЬСИЯ И СПОСОБ ЕЕ ПОЛУЧЕНИЯ

Настоящее изобретение относится к водной эмульсии, которая в качестве диспергирующего средства включает смолу на основе поливинилового спирта, и в качестве дисперсоида включает полимер, содержащий структурную единицу, образованную из этиленненасыщенного мономера, из которой может быть получена пленка, обладающая высокой прозрачностью, имеющая прекрасную механическую стабильность, химическую стойкость, морозостойкость и стабильность при хранении, а также к способу получения указанной водной эмульсии, а также относится к водной эмульсии, в которой средний размер частиц дисперсоида составляет от 100 до 450 нм и кажущаяся эффективность прививки смолы на основе поливинилового спирта составляет от 65 до 75% относительно дисперсоида, и к способу получения указанной водной эмульсии.

ВОДНАЯ ЭМУЛЬСИЯ И СПОСОБ ЕЕ ПОЛУЧЕНИЯ

Изобретение относится к водной эмульсии, которая в качестве диспергирующего средства включает смолу на основе поливинилового спирта и в качестве дисперсной фазы включает полимер, содержащий структурные звенья, образованные из этиленненасыщенного мономера, из которой может быть получена пленка, обладающая высокой прозрачностью, имеющая прекрасную механическую стабильность, химическую стойкость, морозостойкость и стабильность при хранении, а также к способу получения указанной водной эмульсии. Кроме того, изобретение относится к водной эмульсии, в которой средний размер частиц дисперсной фазы составляет от 100 до 450 нм и кажущаяся эффективность прививки смолы на основе поливинилового спирта составляет от 65 до 75% относительно дисперсной фазы, и к способу получения указанной водной эмульсии.

DISPERSIONS ON THE BASIS CONTRACTION INCLINATION REDUCED BY GRAFTING POLYMERS A THIRD MONOMER CONTAINING AND FROM THIS MANUFACTURE PU FOAM WITH

Hydroxyphenyl cross-linked macromolecular network and applications thereof

Vinyl-4-Tetrahydropyranyloxybenzal-Vinyl-4-Hydroxybenzal-Vinyltetrahydropyranylether-Vinylacetat-Copolymer, Vinyl-4-Tetrahydropyranyloxybenzal-Vinyl-Tetrahydropyranylether-Vinylacetat-Copolymer und Herstellungsverfahren dafür

Vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranylether-vinyl acetate copolymer

HYDROXYPHENYL CROSS-LINKED MACROMOLECULAR NETWORK AND APPLICATIONS THEREOF

A dihydroxyphenyl cross-linked macromolecular network is provided that is useful in artificial tissue and tissue engineering applications, such as artificial or synthetic cartilage. The network is made by first providing a polyamine or polycarboxylate macromolecule (having a plurality of amine or carboxylic acid groups respectively attached along the length of the molecule), reacting this macromolecule with a hydroxyphenyl compound having a free carboxylic acid group in the case of a polyamine or a free primary amine group in the case of a polycarboxylate, and substituting the hydroxyphenyl compound onto the macromolecule via a carbodiimide-mediated reaction pathway to provide a hydroxyphenyl-substituted macromolecule. This macromolecule is then linked to other such macromolecules via an enzyme catalyzed dimerization reaction between two hydroxyphenyl groups attached respectively to different macromolecules under metabolic conditions of temperature and pH. In a preferred embodiment, the ...

Acrylic modified anionic water dispersible styrene allyl alcohol copolymers

This invention provides a graft copolymer of at least one acrylic monomer and a random copolymer of a styrene and allyl alcohol, in which at least about 8 percent of the total weight of said graft copolymer is derived from acrylic acid, methacrylic acid, or both. It also provides anionic aqueous dispersions of such graft copolymers and coating compositions containing them.

AQUEOUS PRIMARY DISPERSIONS, PROCEDURES FOR YOUR PRODUCTION AND YOUR USE

GRAFT POLYMER DISPERSION HAVING A THIRD MONOMER AND POLYURETHANE FOAMS HAVING A REDUCED TENDENCY TO SHRINK PREPARED THEREBY

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyl mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2 - C6 alkyl methacrylate.

Hydroxyphenyl cross-linked macromolecular network and applications thereof

Hydroxyphenyl cross-linked macromolecular network and applications thereof

A dihydroxyphenyl cross-linked macromolecular network is provided that is useful in artificial tissue and tissue engineering applications, such as artificial or synthetic cartilage. The network is made by first providing a polyamine or polycarboxylate macromolecule (having a plurality of amine or carboxylic acid groups respectively attached along the length of the molecule), reacting this macromolecule with a hydroxyphenyl compound having a free carboxylic acid group in the case of a polyamine or a free primary amine group in the case of a polycarboxylate, and substituting the hydroxyphenyl compound onto the macromolecule via a carbodiimide-mediated reaction pathway to provide a hydroxyphenyl-substituted macromolecule. This macromolecule is then linked to other such macromolecules via an enzyme catalyzed dimerization reaction between two hydroxyphenyl groups attached respectively to different macromolecules under metabolic conditions of temperature and pH. In a preferred embodiment, the ...

PRODUCTION OF ACETAL DERIVATIZED HYDROXYL AROMATIC POLYMERS AND THEIR USE IN RADIATION SENSITIVE FORMULATIONS

The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, quoting a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

WATER-SOLUBLE POLYMER COMPLEXES

PROCESSO PARA PREPARACAO DE UM MEIO NUTRIENTE DENSO PARA CULTIVO DE MICROORGANISMOS

Aqueous primary dispersions, method for preparation and use thereof

Aqueous primary dispersions comprising dispersed and/or emulsified, solid and/or liquid polymer particles and/or dispersed solid core-shell particles having a diameter<=500 nm, preparable by free-radical microemulsion or miniemulsion polymerization of at least one olefinically unsaturated monomer (A) in the presence of at least one polyhydroxy-functionalized cyclic and/or acyclic alkare having from 9 to 16 carbon atoms in the molecule, and their use in automotive OEM finishing and refinishing, in furniture coating and in industrial coating, including coil coating, container coating and the coating of electrical components.

VERFAHREN ZUR HERSTELLUNG EINES FESTEN MEDIUMS ZUR KULTIVIERUNG VON MIKROORGANISMEN.

Prodn. of solid nutrient media for culturing microorganisms is effected by (a) subjecting a mixt. of 15-20 pts. wt. acrylamide and 0.019-0.132 pts. wt. N,N'-methylenebisacrylamide (MBA) to radical copolymerisation in physiological saline soln. (PSS) in the presence of 1-3 pts. wt. polyvinyl alcohol (PVA); (b) washing the resulting gel and swelling it in PSS; and (c) impregnating the gel with nutrients.

Vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer vinyl 4-tetrahydropyranyloxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer and preparation methods thereof

A vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, a vinyl 4-tetrahydropyranyloxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer and a preparation method thereof are provided. The copolymers have excellent transparency because they are very low in optical absorbance in the deep uv range. In addition, the acetal structure in the backbone and in the substituted groups endows the photoresist of the copolymer with superior dry etch resistance.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD, EACH USING THE COMPOSITION

An actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group has been substituted with a group represented by the following General Formula (1) (in the formula, M11 represents a single bond or a divalent linking group; Q11 represents an alkyl group, a cycloalkyl group, or an aryl group).

Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations

The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

PREPARATION OF PARTIALLY CROSS-LINKED POLYMERS AND THEIR USE IN PATTERN FORMATION

This invention relates to a process for generating an organically soluble partially cross-linked acid labile polymer according to the present invention comprises the steps of providing a polymer with one or more monomer units, wherein at least one of the monomer units contain one or more pendent COOH or hydroxyl groups; and reacting said polymer with a polyvinyl ether in the presence of an acid catalyst to form links between at least two polymer chains. The resulting polymer can be used as a component in a photoresist formulation. © KIPO & WIPO 2007 ...

Hydroxyphenyl cross-linked macromolecular network and applications thereof

HYDROXYPHENYL CROSS-LINKED MACROMOLECULAR NETWORK AND APPLICATIONS THEREOF

... ²²²A dihydroxyphenyl cross-linked macromolecular network is provided that is ²useful in artificial tissue and tissue engineering applications, such as ²artificial or synthetic cartilage. The network is made by first providing a ²polyamine or polycarboxylate macromolecule (having a plurality of amine or ²carboxylic acid groups respectively attached along the length of the ²molecule), reacting this macromolecule with a hydroxyphenyl compound having a ²free carboxylic acid group in the case of a polyamine or a free primary amine ²group in the case of a polycarboxylate, and substituting the hydroxyphenyl ²compound onto the macromolecule via a carbodiimide-mediated reaction pathway ²to provide a hydroxyphenyl-substituted macromolecule. This macromolecule is ²then linked to other such macromolecules via an enzyme catalyzed dimerization ²reaction between two hydroxyphenyl groups attached respectively to different ²macromolecules under metabolic conditions of temperature and pH. In a ²preferred ...

Modified polypropylene and process for producing same

A modified polypropylene which is a polypropylene having a value of racemic diad fraction [r] in a specific range and modified with a specific compound, e.g., (meth)acrylic acids, and their derivatives or styrene derivatives to have well-balanced properties of affinity for polypropylene-based materials, thermal stability, and high solubility in organic solvents; and a process for producing same. More particularly, the modified polypropylene which is a polypropylene having a value of racemic diad fraction [r] of 0.51 to 0.88, determined by13C-NMR analysis, and chemically modified with a compound serving as a modifier, e.g., (meth)acrylic acids, and their derivatives or styrene derivatives; and the process for producing the modified polypropylene, wherein the polypropylene having a value of racemic diad fraction [r] in the above range is reacted with at least one type of the compound serving as the modifier in the presence of a radical initiator.

Tetrahydropyranyloxybenzal derivatives of polyvinyl alcohol for use as photoresist copolymers

AQUEOUS PRIMARY DISPERSIONS, METHOD FOR PREPARATION AND USE THEREOF

The invention relates to aqueous primary dispersions, containing dispersed and/or emulsified solid and/or fluid polymer particles and/or dispersed solid core-shell particles with a particle diameter <= 500 nm, which may be produced by radical micro- or mini-emulsion polymerisation of at least one olefinic unsaturated monomer (A), in the presence of at least one polyhydroxy functionalised cyclic and/or acyclic alkane, comprising 9 - 16 C atoms per molecule. The invention further relates to the use thereof in automobile production and repair painting, furniture painting and industrial painting, including coil coating, container coating and coating of electrotechnical components.

Dispersões primárias aquosas, processo para preparar as mesmas e sua aplicação

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD

An actinic ray-sensitive or radiation-sensitive resin composition comprising (P) a resin having a repeating unit represented by the following formula (1), a resist film using the composition, and a pattern forming method.

Tetrahydropyranyloxybenzal derivatives of polyvinyl alcohol

Vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, a vinyl 4-tetrahydropyranyloxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymers have excellent transparency because they are very low in optical absorbance in the deep uv range. In addition, the acetal structure in the backbone and in the substituted groups endows the photoresist of the copolymer with superior dry etch resistance.

Aqueous primary dispersions, method for preparation and use thereof

AQUEOUS PRIMARY DISPERSIONS, METHOD FOR PREPARATION AND USE THEREOF

Dispersionen auf der Basis von Pfropfpolymeren ein drittes Monomer enthaltend und daraus hergestellte Polyurethanschäume mit reduzierter Schrumpfneigung

Polyester modified ethylene-vinyl alcohol copolymerization resin , manufacturing method and use thereof

Dispersionen auf der Basis von Pfropfpolymeren ein drittes Monomer enthaltend und daraus hergestellte Polyurethanschäume mit reduzierter Schrumpfneigung

Graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2 -C6 alkyl methacrylate.

Photoresists mit Vinyl-4-Tetrahydropyranyloxybenzal-Vinyl-4-Hydroxybenzal-Vinyltetrahydropyranylether-Vinylacetat-Copolymer und mit Vinyl-4-Tetrahydropyranyloxybenzal-Vinyltetrahydropyranylether-Vinylacetat-Copolymer

Photoresist mit einem Vinyl-4-tetrahydropyranyloxybenzal-Vinyltetrahydropyranylether-Vinylacetat-Copolymer, dargestellt durch die folgende allgemeine Formel I: wobei x Molprozent im Bereich von 5 bis 70 sind; y Molprozent im Bereich von 1 bis 60 sind und z Molprozent im Bereich von 0 bis 40 sind.

A high molecule copolymer with a excellent water-resisting, chemical-resisting, and weather-resisting property, and it's fabrication method.

Acrylic modified anionic water dispersible styrene allyl alcohol copolymers

This invention provides a graft copolymer of at least one acrylic monomer and a random copolymer of a styrene and allyl alcohol, in which at least about 8 percent of the total weight of said graft copolymer is derived from acrylic acid, methacrylic acid, or both. It also provides anionic aqueous dispersions of such graft copolymers and coating compositions containing them.

AQUEOUS EMULSION AND PROCESS FOR PRODUCTION THEREOF

This invention provides an aqueous emulsion, which comprises a polyvinyl alcohol-based resin, as the dispersant, and a polymer comprising a structural unit derived from an ethylenically unsaturated monomer, as the dispersoid, from which a film having excellent transparency can be obtained, and which is excellent in mechanical stability, chemical stability, freezing stability and storage stability, and a method for producing the same, and relates to an aqueous emulsion which has an average particle size of the dispersoid of from 100 to 450 µm and an apparent grafting efficiency of the polyvinyl alcohol-based resin of from 65 to 75% based on the dispersoid, and a method for producing the same.

COMPOSITE INCLUDING HIGH MOLECULAR WEIGHT COPOLYMER HAVING GOOD WATER RESISTANCE, CHEMICAL RESISTANCE, AND WEATHER RESISTANCE, AND METHOD FOR PREPARING SAME

The present invention relates to a conductor having water resistance, chemical resistance, and weather resistance against moisture or the surroundings, and more particularly, to a technique capable of producing a composite including a graft copolymer having water resistance, chemical resistance, and weather resistance by adding an alcohol-based polymer to a conductive material and a polymer of the conductive emulsifier, mixing same, and then inducing dehydration condensation through heat treatment. Specifically, the conductive emulsifier and the alcohol-based polymer are mixed and subjected to heat treatment in order to remove a hydrophilic group of the conductive emulsifier and a hydrophilic group of the alcohol-based polymer through dehydration condensation, whereby the finally produced graft copolymer can have good water resistance so as to prevent reaction with moisture in the air.

AQUEOUS EMULSION AND PRODUCTION METHOD THEREFOR

This aqueous emulsion comprises a dispersoid (A), a dispersant (B), and inorganic fine particles (C), wherein: a polymer (A1), which contains 95-99.95 mass% of an unsaturated monomer unit having no carboxyl group and 0.05-5 mass% of an unsaturated monomer unit having a carboxyl group, is contained as the dispersoid (A); an ethylene-vinyl alcohol copolymer (B1) having an ethylene unit content of 1-12 mol% (exclusive of 12) is contained as the dispersant (B); the content of the dispersant (B) is 2-20 parts by mass with respect to 100 parts by mass of the dispersoid (A); and the content of the inorganic fine particles (C) is 0.2-15 parts by mass with respect to 100 parts by mass of the dispersoid (A). Consequently, an aqueous emulsion having excellent adhesiveness when used as an adhesive is provided.

HYDROXYPHENYL CROSS-LINKED MACROMOLECULAR NETWORK AND APPLICATIONS THEREOF

A dihydroxyphenyl cross-linked macromolecular network is provided that is useful in artificial tissue and tissue engineering applications, such as artificial or synthetic cartilage. The network is made by first providing a polyamine or polycarboxylate macromolecule (having a plurality of amine or carboxylic acid groups respectively attached along the length of the molecule), reacting this macromolecule with a hydroxyphenyl compound having a free carboxylic acid group in the case of a polyamine or a free primary amine group in the case of a polycarboxylate, and substituting the hydroxyphenyl compound onto the macromolecule via a carbodiimide-mediated reaction pathway to provide a hydroxyphenyl-substituted macromolecule. This macromolecule is then linked to other such macromolecules via an enzyme catalyzed dimerization reaction between two hydroxyphenyl groups attached respectively to different macromolecules under metabolic conditions of temperature and pH. In a preferred embodiment, the ...

A graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink once prepared thereby

HERSTELLUNG VON ACETAL-DERIVATISIERTEN HYDROXYLAROMATISCHEN POLYMEREN UND IHRE VERWENDUNG IN STRAHLUNGSEMPFINDLICHEN FORMULIERUNGEN

WÄSSRIGE PRIMÄRDISPERSIONEN, VERFAHREN ZU IHRER HERSTELLUNG UND IHRE VERWENDUNG

VINYL 4-TETRAHYDROPYRANYL OXY BENZAL-VINYL 4-HYDROXY BENZAL-VINYL TETRAHYDROPYRANYL ETHER-VINYL ACETATE COPOLYMER, VINYL 4-TETRAHYDROPYRANYL OXY BENZAL-VINYL TETRAHYDROPYRANYL ETHER-VINYL ACETATE COPOLYMER AND PROCESS FOR PRODUCING THE SAME.

PURPOSE: Provided are a vinyl 4-tetrahydropyranyl oxy benzal-vinyl 4-hydroxy benzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, a vinyl 4-tetrahydropyranyl oxy benzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, which can be used as photoresist in a far ultraviolet area. CONSTITUTION: The vinyl 4-tetrahydropyranyl oxy benzal-vinyl 4-hydroxy benzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer (formula 2) and the vinyl 4-tetrahydropyranyl oxy benzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer (formula 1) are produced by protecting alcohol group and 4-hydroxy benzal group, or a part of the 4-hydroxy benzal group of vinyl 4-hydroxy benzal-vinyl alcohol-vinyl acetate. In the formula, x is 5-70mol%, y is 1-60mol%, z is 0-40mol%, m is 1-50mol%, n is 5-60mol%, o is 1-60mol%, and p is 0-40mol%. COPYRIGHT 2001 KIPO ...

AQUEOUS PRIMARY DISPERSIONS, METHOD FOR PREPARATION AND USE THEREOF

The invention relates to aqueous primary dispersions, containing dispersed and/or emulsified solid and/or fluid polymer particles and/or dispersed solid core-shell particles with a particle diameter ≤ 500 nm, which may be produced by radical micro- or mini-emulsion polymerisation of at least one olefinic unsaturated monomer (A), in the presence of at least one polyhydroxy functionalised cyclic and/or acyclic alkane, comprising 9 - 16 C atoms per molecule. The invention further relates to the use thereof in automobile production and repair painting, furniture painting and industrial painting, including coil coating, container coating and coating of electrotechnical components.

CHEMICAL AGENT FOR PAPER MANUFACTURING AND ITS USE

PROBLEM TO BE SOLVED: To obtain a chemical agent capable of improving paper strength, paper manufacturing yield and freeness, by copolymerization of an N- vinylcarboxylic acid amide and acrylonitrile in specified proportions in the presence of polyvinyl alcohol(PVA) in an aqueous medium followed by conducting a hydrolysis. SOLUTION: This chemical agent for paper manufacturing is obtained by copolymerization of a monomer (mixture) composed of 10-100 (pref. 35-100)mol% of an N-vinylcarboxylic acid amide such as N-vinyl-formamide and 0-90 (pref. 0-65)mol% of acrylonitrile in the presence of PVA in an aqueous medium followed by conducting a hydrolysis. The weight ratio: PVA/monomer is pref. (2:1) to (1:20), and the intrinsic viscosity of the polymer resulted from the hydrolysis is pref. 0.1-10dL/g (in 1N saline solution). COPYRIGHT: (C)1997,JPO ...

Aqueous emulsion and process for production thereof

HYDROXYPHENYL CROSS-LINKED MACROMOLECULAR NETWORK AND APPLICATIONS THEREOF

A dihydroxyphenyl cross-linked macromolecular network is provided that is useful in artificial tissue and tissue engineering applications, such as artificial or synthetic cartilage. The network is made by first providing a polyamine or polycarboxylate macromolecule (having a plurality of amine or carboxylic acid groups respectively attached along the length of the molecule), reacting this macromolecule with a hydroxyphenyl compound having a free carboxylic acid group in the case of a polyamine or a free primary amine group in the case of a polycarboxylate, and substituting the hydroxyphenyl compound onto the macromolecule via a carbodiimide-mediated reaction pathway to provide a hydroxyphenyl-substituted macromolecule. This macromolecule is then linked to other such macromolecules via an enzyme catalyzed dimerization reaction between two hydroxyphenyl groups attached respectively to different macromolecules under metabolic conditions of temperature and pH. In a preferred embodiment, the ...

A graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink once prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2 - C6 alkyl methacrylate.

Hydrogel and method for preparing same

The present invention relates to a high strength hydrogel and a preparation method thereof. The method is firstly to perform a pre-irradiation and peroxidation process and then a thermal-initiated polymerization process. The pre-irradiation and peroxidation process is to irradiate the water soluble polymer or the water soluble polymer solution in the nitrogen atmosphere by the high energy radiation source to combine the peroxy group on the polymer chains; and the thermal-initiated polymerization process is to mix solution prepared by the water soluble polymer after initiated with the water soluble monomer or mix the water soluble polymer solution after initiated with the water soluble monomer, and then the product is obtained by deoxidizing and heating the mixture. The preparation method of hydrogel of the invention is simple, and the prepared hydrogel has a high mechanical strength, a wide selecting range of the raw materials, and a high applied cost.

Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations

The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

Aqueous primary dispersions, method for preparation and use thereof

Aqueous primary dispersions comprising dispersed and/or emulsified, solid and/or liquid polymer particles and/or dispersed solid core-shell particles having a diameter<=500 nm, preparable by free-radical microemulsion or miniemulsion polymerization of at least one olefinically unsaturated monomer (A) in the presence of at least one polyhydroxy-functionalized cyclic and/or acyclic alkare having from 9 to 16 carbon atoms in the molecule, and their use in automotive OEM finishing and refinishing, in furniture coating and in industrial coating, including coil coating, container coating and the coating of electrical components.

HERSTELLUNG VON ACETAL-DERIVATISIERTEN HYDROXYLAROMATISCHEN POLYMEREN UND IHRE VERWENDUNG IN STRAHLUNGSEMPFINDLICHEN FORMULIERUNGEN

AQUEOUS EMULSION AND PROCESS FOR PRODUCTION THEREOF

Disclosed are: an aqueous emulsion which comprises a polyvinyl alcohol resin as a dispersing agent and a polymer having a constituent unit derived from an ethylenically unsaturated monomer as a dispersoid, which enables the formation of a coating film having excellent transparency, and which has excellent mechanical stability, chemical stability, freezing stability and storage stability; and a process for producing the aqueous emulsion. In the aqueous emulsion, the disopersoid has an average particle diameter of 100 to 450 μm, and the apparent grafting degree of the polyvinyl alcohol resin to the dispersoid is 65 to 75%.

Radiation-curable compositions for pigmented inks

The present invention relates to radiation-curable compositions useful as ink vehicles or inks, in particular UV-curable inks, such as UV-litho inks, comprising a (meth)acrylated styrene allyl alcohol copolymer obtained from the (meth)acrylation of a styrene allyl alcohol (SAA) copolymer with (meth)acrylic acid and/or one or more alkyl(meth)acrylates, and at least one alkoxylated acrylated monomer.

Wäßrige Primärdispersionen, Verfahren zu ihrer Herstellung und ihre Verwendung

The invention relates to aqueous primary dispersions, containing dispersed and/or emulsified solid and/or fluid polymer particles and/or dispersed solid core-shell particles with a particle diameter Подробнее

Acetal resin, mixed acetal derivatized polymer, and production and use thereof

Graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2 -C6 alkyl methacrylate.

Graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2 -C6 alkyl methacrylate.

PRODUCTION OF ACETAL DERIVATIZED HYDROXYL AROMATIC POLYMERS AND THEIR USE IN RADIATION SENSITIVE FORMULATIONS

Actinic ray-sensitive or radiation-sensitive resin composition, and, actinic ray-sensitive or radiation-sensitive film and pattern forming method, each using the composition

An actinic ray-sensitive or radiation-sensitive resin composition contains a compound (P) that contains at least one phenolic hydroxyl group and at least one group in which a hydrogen atom of a phenolic hydroxyl group has been substituted with a group represented by the following General Formula (1) (in the formula, M11represents a single bond or a divalent linking group; Q11represents an alkyl group, a cycloalkyl group, or an aryl group).

Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations

The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

2099 Environment protection inner wall latex paint emulsion

The invention discloses a production method of 2009 environment protection interior wall emulsion varnish latex. The 2009 environment protection interior wall emulsion varnish latex, which takes polyvinyl alcohol as the main material and is prepared through reaction in a reactor by adding in assistant and additive, has better quality than the prior acrylic latex and styrene-acrylic latex; the cost of the latex of the invention is 50 percent to 60 percent lower than that of the acrylic latex and the styrene-acrylic latex. The latex of the invention can be widely applied to the interior wall emulsion varnish latex of all buildings, and has the advantages of simple production process and low production cost.

Hydroxyphenyl cross-linked macromolecular network and applications thereof

Graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2-C6 alkyl methacrylate.

Low-temperature resistance adhesive

Method for synthesizing polypren phosphate

Vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, vinyl 4-tetrahydropyranyloxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer and preparation methods thereof

A vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, a vinyl 4-tetrahydropyranyloxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer and a preparation method thereof are provided. The copolymers have excellent transparency because they are very low in optical absorbance in the deep uv range. In addition, the acetal structure in the backbone and in the substituted groups endows the photoresist of the copolymer with superior dry etch resistance.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE COMPOSITION

Provided is an actinic ray-sensitive or radiation-sensitive resin composition containing a compound (A) which contains at least one phenolic hydroxyl group and at least one group where a hydrogen atom in a phenolic hydroxyl group is substituted by a group represented by the following General Formula (1). (in the formula, each of R11 and R12 independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group; X11 represents an aryl group; M11 represents a single bond or a divalent linking group; and Q11 represents an alkyl group, a cycloalkyl group or an aryl group, wherein the number of carbon atoms which are included in the group represented by -M11-Q11 is 3 or more, and at least two of R11, R12, Q11, and X11 may form a ring by bonding to each other) ...

Functional polyolefins useful as metal adhesion promoters

An improved method for producing polypropylenes grafted with acrylic acid by means of reactive extrusion using an organic peroxide is disclosed, wherein the improvement comprises feeding the acrylic acid and the peroxide into the extruder downstream from the point where the polypropylene is introduced; wherein the acrylic acid is added at a feed rate greater than 25 pounds per hour, the peroxide is added at a feed rate greater than 2 pounds per hour, and the total rate is greater than 500 pounds per hour; and whereby the PP-g-AA thus produced has a melt flow rate greater than about 200 dg per minute.

Latex adhesive

Ethylene copolymer compositions suitable for viscosity index improvers and lubricant compositions

The present invention provides processes for making a bimodal solid polymer composition suitable for use as a viscosity index improver. Ethylene and an alpha-olefin comonomer are polymerized in the presence of a metallocene catalyst to form first and second copolymers, in series or parallel reactors, which are combined to form an intimate blend of relatively high and relatively low ethylene content copolymers in the solvent use. The composition can be further grafted and derivatized to provide a viscosity index improver, the composition being produced directly with the correct viscosity, without the need for additional blending, shearing or masticating steps.

Production of acetal derivatized hydroxyl aromatic polymers and their use in radiation sensitive formulations

The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in-situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, coating a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

Vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, vinyl 4-tetrahydropyranyloxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer and preparation methods thereof

A vinyl 4-tetrahydropyranyloxybenzal-vinyl 4-hydroxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer, a vinyl 4-tetrahydropyranyloxybenzal-vinyl tetrahydropyranyl ether-vinyl acetate copolymer and a preparation method thereof are provided. The copolymers have excellent transparency because they are very low in optical absorbance in the deep uv range. In addition, the acetal structure in the backbone and in the substituted groups endows the photoresist of the copolymer with superior dry etch resistance.

PHOTOSETTING INSULATING VARNISH

PURPOSE: Heat-stable varnish capable of forming three dimensional network directly from liquid monomers comprises a specific diallyl compound, a a compound having a photocopolymerizable group and a sensitizer. COPYRIGHT: (C)1976,JPO&Japio ...

WATERY PRIMARY DISPERSIONS, PROCESS TO PREPARE SAME AND ITS APPLICATION

AQUEOUS DISPERSIONS OF ADHESION PROMOTERS

Aqueous dispersions of water-insoluble polyolefin-based adhesion promoters are formed by dissolving the adhesion promoter in at least one olefinically unsaturated monomer, forming a mini-emulsion with high shear in the presence of water, surfactant and other additives, and then polymerizing the monomer with a monomer-soluble, substantially water insoluble radical initiator. The polymerized product, a stable dispersion (latex) of polyolefin adhesion promoter and polymerized monomer in water, is useful as a primer or as an additive for improving the adhesion of coatings to polyolefin substrates.

Graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2-C6 alkyl methacrylate.

Graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2-C6 alkyl methacrylate.

VINYL 4-TETRAHYRDROPYANYLOXYBENZAL-VINYLTETRAHYDROPYRANYL ETHER-VINYL ACETATE COPOLYMER, VINYL 4-TETRAHYDROPYRANYLOXYBENZAL-VINYL 4-HYDROXYBENAL-VINYLTETRAHYDROPYRANYL ETHER-VINYL ACETATE COPOLYMER, THEIR PRODUCTION AND PHOTORESIST

PROBLEM TO BE SOLVED: To obtain the subject copolymer for a photoresist, etc., by reacting a vinyl 4-hydroxybenzal-vinyl alcohol-vinyl acetate copolymer with 2,3- dihydropyran by using hydrochloric acid in DMF. SOLUTION: This vinyl 4-tetrahydropyranyloxybenzal-vinyltetrahydropyranyl ether-vinyl acetate copolymer is expressed by formula II in which respective chain is constructed in ordered or unordered state and is useful for a photoresist, etc., capable of producing a superior fine pattern circuit, etc., in a semiconductor integrated circuit, etc. The copolymer is obtained by reacting a vinyl 4- hydroxybenzal-vinyl alcohol-vinyl acetate copolymer expressed by formula I {(a) is 5-70mol%; (b) is 1-60mol%; (c) is 0-40mol%} with 2,3-dihydropyran by using hydrochloric acid in dimethylformamide(DMF) as a solvent and protecting 4-hydroxybenzal group and alcohol group with tetrahydropyran group. COPYRIGHT: (C)1998,JPO ...

Graft polymer dispersion having a third monomer and polyurethane foams having a reduced tendency to shrink prepared thereby

There is a provided a stable low viscosity graft polymer dispersion comprising from 25 to 60 weight percent based on the total weight of the polymer dispersion of at least three ethylenically unsaturated monomers polymerized in the presence of a reaction moderator and a free radical initiator in a polyol mixture initially containing less than 0.1 moles of induced unsaturation per mole of said polyol mixture. One of the monomers in the mixture of ethylenically unsaturated monomers is a hydroxylfunctional or aminofunctional C2 -C6 alkyl methacrylate.

PRODUCTION OF ACETAL DERIVATIZED HYDROXYL AROMATIC POLYMERS AND THEIR USE IN RADIATION SENSITIVE FORMULATIONS

The present invention provides a process for generating mixed acetal polymers by reacting a hydroxyl containing polymer or monomer with vinyl ether and alcohol in the presence of an acid catalyst. The process of this invention provides a new class of polymers based on mixed acetals which are prepared in situ with one reaction. The mixed acetal polymers are inexpensive to synthesize and readily reproducible. The resulting mixed acetal polymer is blended with a photoacid generator and dissolved in a solvent to produce a chemically amplified resist composition. A process for forming a pattern comprises the steps of providing the chemically amplified resist composition, quoting a substrate with the resist composition, imagewise exposing the resist coated substrate to actinic radiation, and forming a resist image by developing the resist coated substrate.

A PROCESS FOR PREPARING A DENSE NUTRIENT MEDIUM FOR GROWING MICROORGANISMS

PHOTOSENSITIVE RESIN COMPOSITION

PURPOSE: To obtain a compsn. capable of developing with water and is useful for the photosensitive layer of the letterpress printing, intaglio printing, and lithographic press by composing the compsn. of completely or partially saponified polyvinyl acetate and photopolymerizable monomer having ethylenic unsatd. bond in the molecule, etc. CONSTITUTION: The photosensitive resin compsn. of this invention is constituted of component A, B, C described hereunder. The component A: 100pts.wt. completely of partially saponified polyvinyl acetate having 50W100mol% degree of saponification. The component B: 20W200pts.wt. photopolymerizable monomer having ethylenic unsatd. bond in the molecule. The component C: 1W50pts.wt. polymer obtd. by homopolymerizing a polymerizable unsatd. monomer having residues expressed by the structural formulas ( I ) and (II) in the molecule or by compolymerizing the monomer with other unsatd. monomer. The average degree of polymn. of most preferred completely or partially ...

Phenol-formaldehyde polymer with carbon nanotubes, a method of producing same, and products derived therefrom

The present invention provides methods to functionalize and solubilize WCNT with a phenolic polymer such as a lignin or a PF resin followed by in-situ integration of this functionalized CNT in the presence of formaldehyde and phenol and/or lignin to generate either CNT-reinforced phenol-formaldehyde polymer or CNT-reinforced lignin-phenol-formaldehyde polymer in either liquid or powder form suitable as an adhesive in the manufacture of a lignocellulosic composite material such as OSB and plywood.

Copolymer Synthesis Process

Preparing a non-ionic copolymer having a hydrolysable monomer residue and a polyether macromonomer residue in a semicontinuous mode in a polymerization reactor associated with a metering device, including introducing polyether macromonomer and water into the reactor, wherein hydrolysable monomer which is added thereto forms a polymerization reaction mixture; introducing hydrolysable monomer into the metering device; adding hydrolysable monomer into the reactor from the metering device; passing a free radical polymerization initiator into the reactor before and/or during the addition of the hydrolysable monomer, the hydrolysable monomer and the polyether macromonomer reacting by free radical polymerization to form the non-ionic copolymer; and, subjecting the reaction mixture to polymerization while an addition rate of the hydrolysable monomer and/or at least a component of the polymerization initiator is varied stepwise or continuously. No monomer is introduced to incorporate ionic cement ...

LITHOGRAPHIC PRINTING PLATE PRECURSORS

Lithographic printing plate precursors can have an imageable layer that includes a polymeric binder having an acid number of at least 30 mg KOH/g of polymer to and including 150 mg KOH/g of polymer, at least 3 weight % of recurring units derived from one or more N-alkoxymethyl (alkyl)acrylamides or alkoxymethyl (alkyl)acrylates, at least 2 weight % of recurring units having pendant 1H-tetrazole groups, and at least 10 weight % of recurring units having pendant cyano groups. The use of such polymeric binders provides good bakeability and chemical solvent resistance, especially for positive-working precursors. 1. A lithographic printing plate precursor comprising a substrate and having an imageable layer disposed thereon , which imageable layer comprises an infrared radiation absorbing compound and a polymeric binder having an acid number of at least 30 mg KOH/g of polymer to and including 150 mg KOH/g of polymer , the polymeric binder comprising , in random order , at least 3 weight % of recurring units derived from one or more N-alkoxymethyl (alkyl)acrylamides or alkoxymethyl (alkyl)acrylates , at least 2 weight % of recurring units having pendant 1H-tetrazole groups , and at least 10 weight % of recurring units having pendant cyano groups.3. The printing plate precursor of wherein w is at least 3 weight % to and including 30 weight % claim 2 , x is at least 30 weight % to and including 70 weight % claim 2 , y is at least 10 weight % to and including 40 weight % claim 2 , and z is at least 15 weight % to and including 40 weight % claim 2 , all based on total polymeric binder weight.4. The printing plate precursor of wherein the N-alkoxymethyl (alkyl)acrylamides and the alkoxymethyl (alkyl)acrylates independently have alkoxy groups having 1 to 8 carbon atoms claim 1 , and alkyl groups that are methyl or ethyl groups.5. The printing plate precursor of wherein the polymeric binder is present in the imageable layer in an amount of from at least 40 weight % to and ...

Photosensitive Resin Composition And Cured Product Thereof

Disclosed is a photosensitive resin composition containing a cationic photopolymerization initiator (A) and an epoxy resin (B) having two or more epoxy groups in each molecule, which is characterized in that the cationic photopolymerization initiator (A) is a cationic photopolymerization initiator (A-1) that is represented by formula (1). 2. The photosensitive resin composition according to claim 1 , wherein the epoxy resin (B) has a softening point of not less than 40° C. and not more than 120° C. claim 1 , and an epoxy equivalent of 150 to 500/eq.4. The photosensitive resin composition according to any one of to claim 1 , wherein the photosensitive resin composition is used for a wafer level package.5. The photosensitive resin composition according to any one of to claim 1 , wherein the photosensitive resin composition is used as an adhesive layer for a substrate and an adherent.6. A dry film resist obtained by sandwiching the photosensitive resin composition according to any one of to with base materials.7. A cured product obtained by curing the photosensitive resin composition according to any one of to .8. A cured product obtained by curing the dry film resist according to . The present invention relates to a photosensitive resin composition that has high sensitivity and resolution and is useful for production of MEMS package parts and semiconductor package parts, particularly useful for production of small and highly air-tight package parts for surface packaging for a variety of mechanical rate sensors of acceleration, angular velocity, pressure, and the like, CMOS and CCD image sensors, optical and RF sensors, and temperature and humidity sensors, and production of MEMS (microelectromechanical system) parts, micromachine parts, microfluidic parts, μ-TAS (micro-total analysis system) parts, inkjet printer parts, microreactor parts, conductive layers, LIGA parts, molds for microinjection molding and thermal embossing or stamps for these, screens or stencils for ...

PRODUCTION METHOD OF POLYHYDROXYIMIDE AND POSITIVE PHOTOSENSITIVE RESIN COMPOSITION CONTAINING POLYHYDROXYIMIDE OBTAINED BY THE PRODUCTION METHOD

There is provided a simple production method of polyhydroxyimide and a positive photosensitive resin composition containing the polyhydroxyimide. A production method of a polyhydroxyimide comprising: adding an acid component that is at least one type of carboxylic acid having a pKa of 0 to 5 to a polyhydroxyimide precursor of Formula (1): 2. The production method of a polyhydroxyimide according claim 1 , to claim 1 , wherein Y is an organic group containing a benzene ring substituted with at least one OH group.3. The production method of a polyhydroxyimide according to claim 2 , wherein Y is an organic group containing two or more benzene rings substituted with at least one OH group.5. The production method of a polyhydroxyimide according to claim 4 , wherein Zto Zare a single bond claim 4 , —CH— claim 4 , —C(CH)— claim 4 , —C(CF)— claim 4 , —C(O)NH— claim 4 , —O— claim 4 , —S(O)— or —C(O)—.7. The production method of a polyhydroxyimide according o claim 6 , wherein the carboxylic acid of Formula (6) is a Caliphatic carboxylic acid.8. The production method of a polyhydroxyimide according to claim 7 , wherein in Formula (6) claim 7 , Rto Rare a hydrogen atom or a halogen atom.9. The production method of a polyhydroxyimide according to claim 8 , wherein the carboxylic acid of Formula (6) is acetic acid or trifluoroacetic acid.10. The production method of a polyhydroxyimide according to claim 1 , wherein the acid component is added in a mass 0.1 to 2 times the mass of the polyhydroxyimide precursor of Formula (1).11. The production method of a polyhydroxyimide according to claim 1 , wherein the heating temperature is 50 to 80° C.13. The production method of a polyhydroxymide according to claim 12 , wherein the organic group as A containing an aromatic group substituted with at least one OH group is an organic group containing a benzene ring substituted with at least one OH group.14. The production method of a poly hydroxyimide according to claim 13 , wherein the ...

Positive photosensitive resin composition and uses thereof

The invention relates to a positive photosensitive resin composition with good temporal stability. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device.

POSITIVE PHOTOSENSITIVE RESIN COMPOSITION, METHOD OF CREATING RESIST PATTERN, AND ELECTRONIC COMPONENT

The positive-type photosensitive resin composition according to the present invention comprises an alkali-soluble resin having a phenolic hydroxyl group, a compound that produces an acid by light, a thermal crosslinking agent, and a silane compound having at least one functional group selected from an epoxy group and a sulfide group. 1. A positive-type photosensitive resin composition , comprising:an alkali-soluble resin having a phenolic hydroxyl group,a compound that produces an acid by light,a thermal crosslinking agent, anda silane compound having at least one functional group selected from an epoxy group and a sulfide group.4. The positive-type photosensitive resin composition according to claim 1 , wherein as the alkali-soluble resin claim 1 , the positive-type photosensitive resin composition contains a phenol resin.5. The positive-type photosensitive resin composition according to claim 1 , wherein as the alkali-soluble resin claim 1 , the positive-type photosensitive resin composition contains a first phenol resin that is a phenol resin having no phenolic hydroxyl group modified with an unsaturated hydrocarbon group-containing compound claim 1 , and a second phenol resin that is a modified phenol resin having a phenolic hydroxyl group modified with an unsaturated hydrocarbon group-containing compound.6. The positive-type photosensitive resin composition according to claim 5 , wherein the second phenol resin further has a phenolic hydroxyl group modified with a polybasic acid anhydride.7. The positive-type photosensitive resin composition according to claim 5 , wherein a content of the first phenol resin is 5 to 95% by mass based on a total of the content of the first phenol resin and a content of the second phenol resin.8. The positive-type photosensitive resin composition according to claim 1 , wherein the compound that produces an acid by light is an o-quinone diazide compound.9. The positive-type photosensitive resin composition according to claim 1 , ...

CYCLOALIPHATIC MONOMER, POLYMER COMPRISING THE SAME, AND PHOTORESIST COMPOSITION COMPRISING THE POLYMER

A monomer has the Formula I: 2. The monomer of claim 1 , wherein Ris H claim 1 , F claim 1 , methyl claim 1 , or trifluoromethyl.3. The monomer of claim 1 , wherein R claim 1 , R claim 1 , and Rare each independently Calkyl claim 1 , Cfluoroalkyl claim 1 , Calkoxy claim 1 , Cfluoroalkoxy claim 1 , Calkanol claim 1 , or a combination comprising at least one of the foregoing.4. The monomer of claim 1 , wherein R claim 1 , R claim 1 , and Rare each independently H claim 1 , methyl claim 1 , ethyl claim 1 , trifluoromethyl claim 1 , 2 claim 1 ,2 claim 1 ,2-trifluoroethyl claim 1 , 2-hydroxyethyl claim 1 , or a combination comprising at least one of the foregoing.5. The monomer of claim 1 , wherein m and n are independently 3 or 4 claim 1 , and x and y are independently an integer of from 0 to 2.6. The monomer of claim 1 , wherein Ris methyl or ethyl claim 1 , m and n are each 3 claim 1 , and x and y are each 0.7. The monomer of claim 1 , wherein A is —O—CH(C═O)—.8. A polymer claim 1 , comprising the monomer of .9. A photoresist composition claim 8 , comprising the polymer of and a photoacid generator.10. A coated substrate claim 9 , comprising: (a) a substrate having one or more layers to be patterned on a surface thereof; and (b) a layer of a photoresist composition of over the one or more layers to be patterned.11. A patterned layer claim 10 , formed by patternwise imaging the coated substrate of using actinic radiation at 193 nm. This application claims the benefit of U.S. Patent Application Ser. No. 61/582,345, filed Dec. 31, 2011, and U.S. patent application Ser. No. 13/711,175, filed Dec. 11, 2012, which are incorporated by reference herein in its entirety.Improved photolithographic technologies based on short wavelength radiation (e.g., as generated by an ArF excimer laser operating at 193 nm), or other such short wavelength sources, are useful in the pursuit of ever faster and more efficient semiconductor devices by increasing device density of an integrated ...

Polymer, Resist Material Containing Same, and Method for Forming Pattern Using Same

A polymer containing a repeating unit represented by the following general formula (1) and a repeating unit having an acid-releasable group. 2. A polymer as claimed in claim 1 , further comprising a repeating unit having 1 claim 1 ,1 claim 1 ,1 claim 1 ,3 claim 1 ,3 claim 1 ,3-hexafluoro-2-hydroxyisopropyl group or a repeating unit having an adhesive group.4. A resist material comprising a polymer as claimed in .5. A resist material as claimed in claim 4 , further comprising at least one kind of an acid generator claim 4 , a basic compound and an organic solvent.6. A resist material as claimed in claim 5 , wherein a C-Calcohol-based solvent is used as the organic solvent.7. A pattern-forming method comprising:{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, 'a first step of applying a resist material as claimed in to a substrate;'}a second step of subjecting the substrate to heat treatment to form a resist film and then exposing the resist film to an ultraviolet light or extreme ultraviolet light having a wavelength of 300 nm or less through a photomask by using an exposure apparatus; anda third step of carrying out development by dissolving an exposed portion of the resist film in a developing solution thereby forming a pattern in the substrate.8. A pattern-forming method as claimed in claim 7 , the method adopting immersion lithography where water is inserted between a wafer and a projection lens and an ultraviolet light is radiated from an ArF excimer laser of a wavelength of 193 nm in use of an exposure apparatus.9. A pattern-forming method according to double patterning where a first resist pattern is formed on a substrate and then a second resist pattern is formed on the first resist pattern claim 4 , wherein a resist material as claimed in is used.10. A pattern-forming method according to EUV lithography that uses an ultraviolet light having a wavelength of 13.5 nm claim 4 , wherein a resist material as claimed in is used. The present invention relates to: a ...

POLYMERIZABLE TERTIARY ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

The present invention provides a polymerizable tertiary ester compound represented by the following general formula (1a) or (1b). There is provided a polymerizable ester compound useful as a monomer for a base resin of a resist composition having a high resolution and a reduced pattern edge roughness in photolithography using a high-energy beam such as an ArF excimer laser light as a light source, especially in immersion lithography, a polymer containing a polymer of the ester compound, a resist composition containing the polymer as a base resin, and a patterning process using the resist composition. 2. The polymerizable tertiary ester compound according to claim 1 , wherein kin the general formula (1a) or (1b) is 1.3. The polymerizable tertiary ester compound according to claim 1 , wherein in the general formula (1a) claim 1 , any one or more of R claim 1 , R claim 1 , and Aa has a cyclic structure.4. The polymerizable tertiary ester compound according to claim 2 , wherein in the general formula (1a) claim 2 , any one or more of R claim 2 , R claim 2 , and Aa has a cyclic structure.6. The polymer according to claim 5 , wherein k in the general formula (2a) or (2b) is 1.7. The polymer according to claim 5 , wherein in the general formula (2a) claim 5 , any one or more of R claim 5 , R claim 5 , and Aa has a cyclic structure.8. The polymer according to claim 6 , wherein in the general formula (2a) claim 6 , any one or more of R claim 6 , R claim 6 , and Aa has a cyclic structure.21. A resist composition comprising the polymer of as a base resin.22. The resist composition according to claim 21 , comprising any one or more of an organic solvent and an acid generator.23. A patterning process comprising the steps of applying the resist composition of to a substrate; performing exposure to a high-energy beam or an electron beam through a photomask after heat treatment; and performing development with a developer.24. The patterning process according to claim 23 , wherein ...

MONOMER, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS

A polymer is prepared from an adamantane methacrylate monomer whose alcoholic hydroxyl group is protected with an alicyclic-containing tertiary alkyl group. A photoresist composition comprising the polymer displays a high sensitivity and a high dissolution contrast during both alkaline development and organic solvent development. 3. The polymer of claim 2 , further comprising recurring units (b) of at least one type having a carboxyl group substituted with an acid labile group and/or recurring units (c) of at least one type derived from a monomer having an adhesive group selected from the class consisting of hydroxyl claim 2 , cyano claim 2 , carbonyl claim 2 , ester claim 2 , ether claim 2 , lactone claim 2 , carboxyl claim 2 , carboxylic anhydride claim 2 , sulfonic acid ester claim 2 , disulfone claim 2 , and carbonate groups.4. A resist composition comprising a base resin comprising the polymer of claim 2 , an acid generator claim 2 , and an organic solvent.5. A pattern forming process comprising the steps of applying a resist composition comprising a base resin comprising the polymer of claim 2 , an acid generator claim 2 , and an organic solvent onto a substrate claim 2 , prebaking the composition to form a resist film claim 2 , exposing the resist film to high-energy radiation to define exposed and unexposed regions claim 2 , baking claim 2 , and developing the exposed film in a developer to form a pattern.6. The process of wherein an alkaline aqueous solution is used as the developer in the developing step to form a positive pattern wherein the exposed region of film is dissolved and the unexposed region of film is not dissolved.7. The process of wherein an organic solvent is used as the developer in the developing step to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved.8. The process of wherein the developer comprises at least one solvent selected from the group consisting of 2- ...

COATING COMPOSITIONS

Developable bottom antireflective coating compositions are provided. 1. A positive bottom photoimageable antireflective coating composition which is capable of being developed with an aqueous alkali developer and which is coated below a positive photoresist , wherein the antireflective coating composition comprises a polymer , a vinyl ether terminated crosslinking agent and one or more compounds having the formula{'br': None, 'sub': 'p', 'W-(L-(G))'}where W is PAG or Q, where PAG is a photoacid generator and Q is a quencher; where G is G1, where G1 is OH, where each L is a direct bond or a linking group; p is 1 to 12.2. The composition of where W is PAG; and p is 2 to 6.3. The composition of where W is Q; and p is 2 to 6.4. The composition of where L is a linking group chosen from the group consisting of substituted alkyl groups claim 1 , unsubstituted alkyl groups claim 1 , substituted alkyl group claim 1 , substituted cycloalkyl groups claim 1 , unsubstituted cycloalkyl groups claim 1 , substituted aryl groups claim 1 , unsubstituted aryl groups claim 1 , substituted heteroaryl groups claim 1 , unsubstituted heteroaryl groups claim 1 , substituted alkyl groups containing an ether group claim 1 , unsubstituted alkyl groups containing an ether group claim 1 , unsubstituted heteroaryl groups claim 1 , substituted alkyl groupscontaining an ester group claim 1 , and unsubstituted alkyl groups containing an ester group.5. The composition of which comprises one or more compounds having the formula{'br': None, 'sub': 'p', 'PAG-(-L-OH)'} {'br': None, 'sub': 'p', 'Q-(-L-OH).'}, 'and one or more compounds having the formula'}6. The composition of which further comprises a thermal acid generator.7. The composition of wherein PAG is selected from onium salts claim 1 , diazomethane derivatives claim 1 , glyoxime derivatives claim 1 , bissulfone derivatives claim 1 , sulfonic acid esters of N-hydroxyimide compounds claim 1 , β-ketosulfonic acid derivatives claim 1 , disulfone ...

PHOTO-CURING POLYSILOXANE COMPOSITION AND APPLICATION THEREOF

Disclosed is a photo-curing polysiloxane composition including: 2. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said pyridine derivative is selected from the group consisting of 2-hydroxymethylpyridine claim 1 , 3-hydroxymethylpyridine claim 1 , 4-hydroxymethyl pyridine claim 1 , 2-hydroxyethyl pyridine claim 1 , 3-hydroxyethyl pyridine claim 1 , 4-hydroxyethyl pyridine claim 1 , 2-hydroxypropyl pyridine. 3-hydroxypropyl pyridine claim 1 , 4-hydroxypropyl pyridine claim 1 , 2 claim 1 ,6-dihydroxymethylpyridine claim 1 , and combinations thereof.3. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said quinonediazidesulfonic acid ester is in an amount ranging from 0.5 to 50 parts by weight claim 1 , said pyridine derivative is in an amount ranging from 0.1 to 20 parts by weight claim 1 , and said solvent is in an amount ranging from 50 to 1200 parts by weight based on 100 parts by weight of said polysiloxane.4. The photo-curing polysiloxane composition as claimed in claim 1 , wherein said polysiloxane is obtained by subjecting a silane monomer component to hydrolysis and partial condensation claim 1 , said silane monomer component including a silane monomer of Formula (I):{'br': None, 'sup': a', 'b, 'sub': t', '4-t, 'Si(R)(OR)\u2003\u2003(I)'}whereint is an integer ranging from 1 to 3,{'sup': a', 'a', 'a, 'sub': 1', '10', '1', '10', '1', '10', '2', '10', '6', '15, 'at least one of Ris selected from the group consisting of an anhydride-substituted C-Calkyl group, an epoxy-substituted C-Calkyl group, and an epoxy-substituted alkoxy group, and the rest of Ris selected from the group consisting of hydrogen, a C-Calkyl group, a C-Calkenyl group, and a C-Caryl group, plural Rs being identical with or different from each other when t is 2 or 3, and'}{'sup': b', 'b, 'sub': 1', '6', '1', '6', '6', '15, 'Ris selected from the group consisting of a hydrogen atom, a C-Calkyl group, a C-Cacyl group, and a C-Caryl group, plural ...

Lithographic printing plate precursor

A positive-working lithographic printing plate precursor which comprises on a support having a hydrophilic surface or which is provided with a hydrophilic layer, a heat and/or light-sensitive coating comprising an infrared absorbing agent and a binder including a monomeric unit including a salicyclic acid group and a monomeric unit including a sulfonamide group.

POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN FORMING METHOD

A positive resist composition for immersion exposure includes the following (A) to (D): (A) a resin capable of decomposing by an action of an acid to increase a solubility of the resin in an alkali developer; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a resin having at least either one of a fluorine atom and a silicon atom; and (D) a mixed solvent containing at least one kind of a solvent selected from the group consisting of solvents represented by any one of the following formulae (S1) to (S3) as defined in the specification, in which a total amount of the at least one kind of the solvent is from 3 to 20 mass % based on all solvents of the mixed solvent (D). 6. The positive resist composition for immersion exposure according to claim 1 ,wherein the aliphatic sulfonate anion in the compound (B) is substituted by a monovalent group having a polycyclic cycloalkyl group.7. The positive resist composition for immersion exposure according to claim 1 ,wherein the resin (C) contains (x) an alkali-soluble group.8. The positive resist composition for immersion exposure according to claim 1 ,wherein the resin (C) contains (y) a group capable of decomposing by the action of an alkali developer to increase the solubility in an alkali developer.9. The positive resist composition for immersion exposure according to claim 1 ,wherein the resin (C) contains (z) a group capable of decomposing by the action of an acid.10. The positive resist composition for immersion exposure according to claim 1 ,wherein the amount added of the resin (C) is in an amount of 0.01 to 10 mass %, based on the entire solid content of the resist composition.11. The positive resist composition for immersion exposure according to claim 1 ,wherein the composition further contains an onium carboxylate.12. The positive resist composition for immersion exposure according to claim 1 ,wherein the mixed solvent (D) further contains cyclohexanone.14. The ...

RESIST COMPPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and which includes a base component which exhibits changed solubility in a developing solution by the action of acid, and a nitrogen-containing compound which has a boiling point of 50 to 200° C., a conjugate acid thereof having a pKa of 0 to 7, and a photodecomposable base; and a method of forming a resist pattern using the resist composition. 1. A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid , comprising:a base component (A) which exhibits changed solubility in a developing solution by the action of acid;a nitrogen-containing compound (N) which has a boiling point of 50 to 200° C., wherein a conjugate acid thereof has a pKa of 0 to 7; anda photodecomposable base (D1).2. The resist composition according to claim 1 , further comprising an acid generator component (B) that generates acid upon exposure.6. The resist composition according to claim 1 , wherein the base component (A) comprises a polymeric compound (A1) which comprises a structural unit (a1) containing an acid decomposable group that exhibits increased polarity by the action of acid.7. A method of forming a resist pattern claim 1 , comprising: forming a resist film on a substrate using a resist composition of ; conducting exposure of the resist film; and developing the resist film to form a resist pattern.8. The resist composition according to claim 1 , wherein the nitrogen-containing compound (N) has a boiling point of 55 to 180° C.9. The resist composition according to claim 1 , wherein the conjugate acid has a pKa of 0.5 to 7.17. The resist composition according to claim 1 , wherein the amount of the nitrogen-containing compound (N) relative to 100 parts by weight of the base component (A) is 0.05 to 30 parts by weight.18. The resist composition according to claim 1 , wherein the ...

POSITIVE PHOTORESIST COMPOSITION, COATING FILM THEREOF, AND NOVOLAC PHENOL RESIN

A positive photoresist composition includes 3 to 80 parts by mass of a novolac phenol resin (B) relative to 100 parts by mass of a cresol novolac resin (A). The novolac phenol resin (B) has a repeating structural unit represented by formula (1) 3. The positive photoresist composition according to claim 2 , wherein a weight-average molecular weight of the novolac phenol resin (B) is 5 claim 2 ,000 to 35 claim 2 ,000.5. The positive photoresist composition according to claim 4 , wherein a weight-average molecular weight of the novolac phenol resin (B) is 1000 to 5000.8. The positive photoresist composition according to claim 4 , wherein the aldehyde-based compound (D) is formaldehyde.9. The positive photoresist composition according to claim 1 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 of (x1) and (x2).10. The positive photoresist composition according to claim 1 , comprising 20 to 60 parts by mass of the novolac phenol resin (B) relative to 100 parts by mass of the cresol novolac resin (A).11. The positive photoresist composition according to claim 1 , wherein the cresol novolac resin (A) is prepared by using claim 1 , as essential raw materials claim 1 , m-cresol or p-cresol claim 1 , and formaldehyde.12. A coating film obtained by applying and drying the positive photoresist composition according to .15. The positive photoresist composition according to claim 5 , wherein the aldehyde-based compound (D) is formaldehyde.16. The positive photoresist composition according to claim 2 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 of (x1) and (x2).17. The positive photoresist composition according to claim 3 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 of (x1) and (x2).18. The positive photoresist composition according to claim 4 , wherein the novolac phenol resin (B) contains 90% or more of (x1) relative to a total of 100 ...

PHOTORESIST COMPOSITION, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD OF MANUFACTURING THE SAME

A positive photoresist composition including a novolac resin, a photo active compound (PAC), a melamine crosslinking agent, and a solvent. 1. A positive photoresist composition , comprising:a novolac resin,a photo active compound,a melamine crosslinking agent, anda solvent.2. The positive photoresist composition of claim 1 , wherein the photo active compound comprises 1 claim 1 ,2-naphthoquinonediazide-5-sulfonate.3. The positive photoresist composition of claim 2 , wherein the photo active compound is a product of condensing a quinone diazide sulfonic acid chloride comprising 1 claim 2 ,2-benzoquinone diazide-4-sulfonic acid chloride and 1 claim 2 ,2-napthoquinone diazide-5-sulfonic acid chloride with a phenol compound comprising 2 claim 2 ,3 claim 2 ,4-trihydroxybenzophenone and 2 claim 2 ,2′ claim 2 ,4 claim 2 ,4′-tetrahydroxybenzophenone.4. The positive photoresist composition of claim 1 , wherein the novolac resin includes a high molecular weight portion claim 1 , a medium molecular weight portion and a low molecular weight portion claim 1 , andwherein an amount of at least one of the medium molecular weight portion or the low molecular weight portion of the novolac resin is reduced compared to an amount of a medium molecular weight portion or the low molecular weight portion in a same novolac resin not treated by a solvent.5. The positive photoresist composition of claim 1 , wherein the novolac resin comprises at least one structural unit of ortho-cresol claim 1 , meta-cresol claim 1 , para-cresol claim 1 , 2 claim 1 ,3-dimethylphenol claim 1 , 3 claim 1 ,4-dimethylphenol claim 1 , 3 claim 1 ,5-dimethylphenol claim 1 , 2 claim 1 ,4-dimethylphenol claim 1 , 2 claim 1 ,6 claim 1 ,6-trimethylphenol claim 1 , 2-methylresorcinol claim 1 , 4-methylresorcinol claim 1 , 5-methylresorcinol claim 1 , 3-propylphenol claim 1 , 4-propylphenol claim 1 , 2-isopropylphenol claim 1 , or 2-methoxy-5-methylphenol.6. The positive photoresist composition of claim 5 , wherein the ...

ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF

The present invention provides an array substrate and a manufacturing method thereof. The manufacturing method of the array substrate adopts a multi-stage mask to expose and develop, so that a thickness of a remaining photoresist layer in a channel region corresponding to a display region is same as a thickness of a remaining photoresist layer in a channel region corresponding to a GOA region. Therefore, the two channel regions can be completely etched to prevent short-circuiting, and make up for defects of different action efficiency of developers caused by different densities of thin film transistors in the display region and the GOA region. 1. A manufacturing method of an array substrate , comprising following steps:{'b': '10', 'S: providing a base substrate, wherein the base substrate comprises a display region and a gate on array (GOA) region, and a gate, a gate insulating layer, an active layer, and a source/drain metal layer are sequentially formed on the base substrate;'}{'b': '20', 'S: forming a photoresist layer on the source/drain metal layer;'}{'b': '30', 'S: using a mask to expose and develop the photoresist layer, so that a thickness of the photoresist layer remaining in a channel region corresponding to the first thin film transistors in the display region is same as a thickness of the photoresist layer remaining in a channel region corresponding to the second thin film transistors in the GOA region, and a light transmittance rate of the mask is adjusted by adjusting relative content of cadmium metal and cadmium oxide in an adjusting film layer;'}{'b': '40', 'S: ashing a remaining portion of the photoresist layer to completely remove the photoresist layer corresponding to the channel region of the first thin film transistors in the display region and corresponding to the channel region of the second thin film transistors in the GOA region; and'}{'b': '50', 'S: etching the source/drain metal layer corresponding to the display region and the GOA region ...

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition is provided comprising (A) a fluorine-containing polymer, (B) a base resin, (C) an acid generator, and (D) a solvent mixture of a first solvent which is a C-Cketone, C-Calcohol, C-Cether or C-Cester and a second solvent which is a lactone ring-containing C-Ccompound. A pattern is formed by coating the resist composition, prebake, exposure, and development. In immersion lithography, the resist film is improved in water slip. In EB or EUV lithography, outgassing is suppressed and edge roughness is reduced. 1. A resist composition comprising(A) a fluorine-containing polymer,(B) a base resin adapted to increase its solubility in alkaline developer under the action of acid,(C) an acid generator, and{'sub': 5', '8', '4', '6', '3', '6', '4', '9', '6', '9, '(D) an organic solvent mixture containing (D-1) a first solvent selected from the group consisting of C-Cketones, C-Calcohols having at least one group selected from alkoxy, carbonyl and ester groups, C-Cethers having a hydroxyl group or two ether groups, and C-Cesters having an ether or hydroxyl group, and (D-2) a second solvent which is a monocyclic lactone ring-containing C-Ccompound, the second solvent being added in an amount of more than 200 parts to 1,000 parts by weight per 100 parts by weight of the base resin.'}2. The resist composition of wherein{'sub': 5', '8, 'the C-Cketones include cyclohexanone, cyclopentanone, 2-heptanone, and 2-octanone,'}{'sub': 4', '6, 'the C-Calcohols having at least one group selected from alkoxy, carbonyl and ester groups include 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and diacetone alcohol,'}{'sub': 3', '6, 'the C-Cethers having a hydroxyl group or two ether groups include propylene glycol monomethyl ether, ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether, and'}{'sub': 4', '9, 'the C-Cesters ...

Lithographic Patterning Process and Resists to Use Therein

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX 3 , A 2 BX 4 , or ABX 4 , wherein A is a compound containing an NH 3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovsikte material.

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring unite (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an add labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development. 1. A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodine or bromine-substituted aromatic ring , and recurring unite of at least one type selected from recurring unite (b1) having a carboxyl group substituted with an acid labile group and recurring unite (b2) having a phenolic hydroxyl group substituted with an acid labile group.5. The resist composition of claim 1 , further comprising an acid generator capable of generating a sulfonic acid claim 1 , sulfone imide or sulfone methide.6. The resist composition of claim 1 , further comprising an organic solvent.7. The resist composition of claim 1 , further comprising a dissolution inhibitor.8. The resist composition of claim 1 , further comprising a surfactant.9. A pattern forming process comprising the steps of applying the positive resist composition of to form a resist film on a substrate claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed resist film in a developer.10. The process of wherein the high-energy radiation is ArF excimer laser of wavelength 193 nm or KrF excimer laser of wavelength 248 nm.11. The process of wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm. This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2019-125147 filed in Japan on Jul. 4, 2019, the ...

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodized or brominated phenol, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development. 1. A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodine or bromine-substituted phenol and recurring units of at least one type selected from recurring units (b1) having a carboxyl group substituted with an acid labile group and recurring units (b2) having a phenolic hydroxyl group substituted with an acid labile group.5. The resist composition of claim 1 , further comprising an acid generator capable of generating a sulfonic acid claim 1 , sulfone imide or sulfone methide.6. The resist composition of claim 1 , further comprising an organic solvent.7. The resist composition of claim 1 , further comprising a dissolution inhibitor.8. The resist composition of claim 1 , further comprising a surfactant.9. A pattern forming process comprising the steps of applying the positive resist composition of to form a resist film on a substrate claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed resist film in a developer.10. The process of wherein the high-energy radiation is ArF excimer laser of wavelength 193 nm or KrF excimer laser of wavelength 248 nm.11. The process of wherein the high-energy radiation is EB or EUV of wavelength 3 to 15 nm. This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2019-123502 filed in Japan on Jul. 2, 2019, the entire contents of which are hereby incorporated by reference.This ...

PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

A photoresist composition comprising: a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group; a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-substituted aryl group; a photoacid generator; and a solvent, wherein the first polymer and the second polymer are different from each other. 1. A photoresist composition comprising:a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group;a second polymer comprising a first repeating unit comprising an acid-labile group, a second repeating unit comprising a lactone group, and a third repeating unit comprising a base-soluble group, wherein the base-soluble group has a pKa of less than or equal to 12, and wherein the base-soluble group does not comprise a hydroxy-aryl group;a photoacid generator; anda solvent,wherein the first polymer and the second polymer are different from each other.5. The photoresist composition of claim 1 , wherein the first polymer or the second polymer comprises a repeating unit comprising the photoacid generator.6. The photoresist composition of claim 5 , further comprising a non-polymeric photoacid generator.7. The photoresist composition of claim 1 , further comprising a photo-decomposable quencher.8. The photoresist composition of claim 1 , further comprising a base-labile material comprising one or more base-labile groups claim 1 , wherein the base-labile material is different from the first polymer and the second polymer.9. The photoresist composition of claim 1 , wherein a weight ratio of the first polymer to the second polymer is from 1:4 to 4:1.10. A ...

RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN

Disclosed is a resin comprising a structural unit derived from a compound represented by formula (I′) and a structural unit having an acid-labile group: 2. The resin according to claim 1 , further comprising a structural unit having an acid-labile group.3. The resin according to claim 2 , further comprising a structural unit which is decomposed upon exposure to radiation to generate an acid.4. A resist composition comprising the resin according to and an acid generator.5. The resist composition comprising the resin according to .6. The resist composition according to claim 4 , further comprising a salt generating an acid having an acidity lower than that of an acid generated from the acid generator.7. A method for producing a resist pattern claim 4 , which comprises:{'claim-ref': {'@idref': 'CLM-00004', 'claim 4'}, '(1) a step of applying the resist composition according to on a substrate,'}(2) a step of drying the applied composition to form a composition layer,(3) a step of exposing the composition layer,(4) a step of heating the exposed composition layer, and(5) a step of developing the heated composition layer. The present invention relates to a resin, a resist composition containing the resin, a method for producing a resist pattern using the resist composition and the like.Patent Document 1 mentions a compound of the following structural formula, a resin including a structural unit having an acid-labile group, and a resist composition comprising an acid generator.Patent Document 1: JP 2015-180928 AThere has been required a composition capable of obtaining a resist pattern with satisfactory line edge roughness (LER).The present invention includes the following inventions.wherein, in formula (I′),Rand Reach independently represent an alkyl group having 1 to 6 carbon atoms which may have a halogen atom, a hydrogen atom or a halogen atom,Ar represents an aromatic hydrocarbon group having 6 to 24 carbon atoms which may have a substituent, andLand Leach ...

Negative Tone Developer Compatible Photoresist Composition and Methods of Use

Compositions and methods herein include negative tone developer compatible photoresist compositions and methods of using such compositions. This includes a positive tone photoresist that can be developed using negative tone developers in that unexposed portions of the positive tone photoresist are dissolvable by one or more negative tone developer solvents. One embodiment includes a negative tone developer compatible photoresist with little or no etch resistance. Non-resistive photoresist materials as described herein can include one or more radiation-sensitive attributes (for example, the photoresist can be patterned, de-protected, solubility shifted, interact with photo chemistries, and respond to exposure doses), except that these materials have effectively no etch resistance. Such compositions can be effectively free from components, functional groups, or additives that provide or increase etch resistivity to a wet or dry etch process. 1. A photoresist composition comprising:a positive tone resist polymer component;a resin component;an acid generator component that generates acid in response to exposure to actinic radiation;a solvent;a solubility shifting component that causes regions of the photoresist composition exposed to actinic radiation to become soluble to a positive tone developer, wherein regions unexposed to actinic radiation remain soluble to a negative tone developer; andwherein an amount of functional groups, included in the photoresist composition that increase etch resistance to a wet etch or dry etch process, ranges from 0.0% to 15% by weight based on a total weight of solid content in the photoresist composition.2. The composition of claim 1 , wherein an amount of functional groups claim 1 , included in the photoresist composition that increase etch resistance to a wet etch or dry etch process claim 1 , ranges from 0.0% to 10% by weight based on a total weight of solid content in the photoresist composition.3. The composition of claim 1 , ...

COMPOSITION FOR FORMING FINE RESIST PATTERN, AND PATTERN FORMATION METHOD USING SAME

The present invention provides a composition enabling to form a fine negative photoresist pattern less suffering from surface roughness, and also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition, and it contains a polymer comprising a repeating unit having an amino group, a solvent, and an acid. In the pattern formation method, the composition is cast on a positive photoresist pattern beforehand obtained by development and is then heated to form a fine pattern. 1. A fine pattern-forming composition used for miniaturizing a resist pattern by fattening in a process of forming a positive resist pattern from a chemically amplified positive-working type resist composition ,containinga polymer comprising a repeating unit having an amino group,a solvent, andan acid.2. The composition according to claim 1 , wherein said amino group is a primary amino group or a secondary amino group.3. The composition according to claim 1 , wherein said repeating unit is one selected from the group consisting of allylamine unit claim 1 , diallylamine unit claim 1 , and ethyleneimine unit.4. The composition according to claim 1 , wherein said polymer is one selected from the group consisting of polyvinylamine claim 1 , polyallylamine claim 1 , polydiallylamine claim 1 , polyethyleneimine claim 1 , and poly(allylamine-co-diallylamine).5. The composition according to claim 1 , wherein said acid is one selected from the group consisting of sulfonic acid claim 1 , carboxylic acid claim 1 , sulfuric acid claim 1 , nitric acid claim 1 , and mixtures thereof.6. The composition according to claim 5 , wherein said sulfonic acid is one selected from the group consisting of methanesulfonic acid claim 5 , ethanesulfonic acid claim 5 , 2-aminomethanesulfonic acid claim 5 , trifluoromethanesulfonic acid ...

POLYMER AND POSITIVE RESIST COMPOSITION

Provided are a polymer that can be favorably used as a positive resist having a high γ value and a positive resist composition that can favorably form a high-resolution pattern. The polymer includes an α-methylstyrene unit and a methyl α-chloroacrylate unit, and has a molecular weight distribution (Mw/Mn) of less than 1.48. The positive resist composition contains the aforementioned polymer and a solvent. 1. A polymer comprising an α-methylstyrene unit and a methyl α-chloroacrylate unit , whereinthe polymer has a molecular weight distribution (Mw/Mn) of less than 1.48.2. The polymer according to claim 1 , whereina proportion of components having a molecular weight of less than 10,000 is no greater than 0.8%.3. The polymer according to claim 1 , whereina proportion of components having a molecular weight of less than 6,000 is no greater than 0.2%.4. A positive resist composition comprising the polymer according to and a solvent. The present disclosure relates to a polymer and a positive resist composition, and in particular relates to a polymer that is suitable for use as a positive resist and a positive resist composition that contains this polymer.Polymers that display increased solubility in a developer after undergoing main chain scission through irradiation with ionizing radiation, such as an electron beam, or short-wavelength light, such as ultraviolet light, are conventionally used as main chain scission-type positive resists in fields such as semiconductor production. (Hereinafter, the term “ionizing radiation or the like” is used to refer collectively to ionizing radiation and short-wavelength light.)PTL 1 discloses one example of a main chain scission-type positive resist having high sensitivity. The disclosed positive resist is formed from an α-methylstyrene-methyl α-chloroacrylate copolymer including an α-methylstyrene unit and a methyl α-chloroacrylate unit.PTL 1: JP H8-3636 BIn order to refine and increase the resolution of a pattern obtained using a ...

POSITIVE-WORKING PHOTORESIST COMPOSITION, PATTERN PRODUCED THEREFROM, AND METHOD FOR PRODUCING PATTERN

The present invention provides a positive photoresist composition having excellent storage stability, sensitivity, developing properties, plating resistance, and heat resistance. More specifically, a specific dissolution inhibitor in the form of an oligomer having the same repeating unit structure as the resin contained in the photoresist composition is applied to said composition. 1. A positive photoresist composition comprising:a binder resin comprising a polymer resin having a first repeating unit and an acrylate-based resin having a second repeating unit, the polymer resin having an alkali-soluble functional group introduced into the first repeating unit;an oligomer compound having a functional group to which at least one protecting group is introduced; anda photoacid generator,wherein the protecting group is selected from the group of acetal, tert-butyloxycarbonyl, and t-butyl ester, andwherein the oligomer compound comprises the same first repeating unit as in the polymer resin or the same second repeating unit as in the acrylate-based resin.2. The positive photoresist composition according to claim 1 , wherein the polymer resin is at least one selected from the group of acrylic resin claim 1 , novolac resin claim 1 , and polyhydroxystyrene resin.3. The positive photoresist composition according to claim 1 , wherein the alkali-soluble functional group is a hydroxyl group or a carboxylic acid group.4. The positive photoresist composition according to claim 1 , wherein the oligomer compound has a weight average molecular weight in the range of 1500 to 5000.7. The positive photoresist composition according to claim 6 , wherein the chain transfer agent is introduced in the range of 5% to 15% by weight claim 6 , based on the total weight of the oligomer compound.8. The positive photoresist composition according to claim 6 , wherein the chain transfer agent is 3-mercapto propionic acid.10. A photoresist pattern produced from the positive photoresist composition ...

PHOTORESIST COMPOSITION FOR LINE DOUBLING

Photoresist compositions, methods of manufacturing the photoresist compositions, and methods of using the photoresist compositions are provided. In one implementation, the photoresist composition comprises a novolac (novolac) resin, a diazonaphthoquinone (DNQ) dissolution inhibitor, a bis(azide) crosslinker, and a casting solvent. In one implementation, the bis(azide) crosslinker absorbs at wavelengths in a range between 325 nanometers and 400 nanometers. In one implementation, the bis(azide) crosslinker is an aromatic bi(azide) crosslinker. 1. A photoresist composition , comprising:a novolac resin;a diazonaphthoquinone (DNQ) dissolution inhibitor;a bis(azide) crosslinker; anda casting solvent.2. The photoresist composition of claim 1 , wherein the bis(azide) crosslinker absorbs at wavelengths in a range between 325 nanometers and 400 nanometers.3. The photoresist composition of claim 1 , wherein the bis(azide) crosslinker is an aromatic bi(azide) crosslinker.444. The photoresist composition of claim 3 , wherein the aromatic bi(azide) crosslinker is selected from p-phenylenebisazide claim 3 , 4 claim 3 ,4′-diazidobiphenyl claim 3 , claim 3 ,′-diazido-3 claim 3 ,3′-dimethylbiphenyl claim 3 , 4 claim 3 ,4′-diazidobiphenylmethane claim 3 , 3 claim 3 ,3′-dichloro-4 claim 3 ,4′-diazidobiphenylmethane claim 3 , 4 claim 3 ,4′-diazidobiphenyl ether claim 3 , 4 claim 3 ,4′-diazidobiphenyl sulfide claim 3 , 4 claim 3 ,4′-diazidobiphenyl disulfide claim 3 , 4 claim 3 ,4′-diazidobiphenyl sulfone claim 3 , 3 claim 3 ,3′-diszidobiphenyl sulfone claim 3 , 4 claim 3 ,4′-diazidobenzophenone claim 3 , 4 claim 3 ,4′-diazidobenzyl claim 3 , 4 claim 3 ,4′-diazidostilbene claim 3 , 4 claim 3 ,4′-diazidochalcone claim 3 , 2 claim 3 ,6-bis(4-azidobenzylidene)cyclohexanone claim 3 , 2 claim 3 ,6-bis(4-azidobenzylidene)-4-methylcyclohexanone claim 3 , 2 claim 3 ,7-diazidofluorene claim 3 , or a combination thereof.5. The photoresist composition of claim 1 , wherein the casting solvent is ...

PHOTOSENSITIVE RESIN COMPOSITION

Disclosed are photosensitive resin compositions capable of forming positive resin films with excellent heat shape retention. The photosensitive resin compositions comprises a polymer having a monomer unit represented by the following general formula (I) and a polyamideimide: 2. The photosensitive resin composition according to claim 1 , wherein the polyamideimide is a polyamideimide having a branched structure.3. The photosensitive resin composition according to claim 1 , wherein the polyamideimide has a number-average molecular weight of 1 claim 1 ,000 or more and 30 claim 1 ,000 or less.4. The photosensitive resin composition according to claim 1 , wherein the polymer is a copolymer further having a (meth)acrylate monomer unit.5. The photosensitive resin composition according to claim 1 , wherein a content ratio by mass of the polymer to the polyamideimide (polymer:polyamideimide) is 90:10 to 70:30.6. The photosensitive resin composition according to claim 1 , further comprising a photoactive compound and a cross-linker. The present disclosure relates to photosensitive resin compositions and, in particular, photosensitive resin compositions capable of forming positive resist films with excellent heat shape retention.Organic electroluminescent elements (organic EL electroluminescent elements), an example of electronic components, are provided with a variety of resin films, such as protective films for preventing degradation and damage, planarizing films for planarizing the element surface and interconnections, electric insulating films for ensuring electrical insulation, and pixel separation films for separating light emitter portions.Similarly, micro light-emitting diodes (LEDs) and organic light-emitting diode (OLEDs), other examples of electronic components, are provided with a variety of resin films, such as protective films for preventing degradation and damage, electric insulating films for ensuring electrical insulation, and passivation films for preventing ...

PHOTOSENSITIVE RESIN COMPOSITION, LITHOGRAPHIC PRINTING PLATE PRECURSOR AND METHOD FOR PRODUCING LITHOGRAPHIC PRINTING PLATE

There is provided a photosensitive resin composition which enables production of a lithographic printing plate precursor having a non-image portion which has good solubility in an alkali aqueous solution and which enables production of a lithographic printing plate having excellent printing durability and excellent chemical resistance, a lithographic printing plate precursor obtained by using the photosensitive resin composition, and a method for producing a lithographic printing plate. 2. The photosensitive resin composition according to claim 1 ,wherein the polymer compound has the constitutional unit represented by Formula B-1 or B-6 as the constitutional unit B.3. The photosensitive resin composition according to claim 1 ,wherein the polymer compound has the constitutional unit represented by Formula B-1 as the constitutional unit B.9. The photosensitive resin composition according to claim 6 ,wherein the ratio of the constitutional unit A to the total mass of the constitutional unit A and the constitutional unit A′ in the polymer compound is 5% by mass to 90% by mass.10. The photosensitive resin composition according to claim 1 ,{'sub': 1', '2, 'wherein Rand Rare arylene groups.'}11. The photosensitive resin composition according to claim 7 ,{'sub': 1', '2, 'wherein Rand Rare arylene groups.'}12. The photosensitive resin composition according to claim 8 ,{'sub': 1', '2, 'wherein Rand Rare arylene groups.'}13. The photosensitive resin composition according to claim 1 ,wherein the polymer compound further has an alkyleneoxy group in the main chain.14. A lithographic printing plate precursor claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'an image recording layer including the photosensitive resin composition according to .'}15. The lithographic printing plate precursor according to which is a positive type.16. The lithographic printing plate precursor according to claim 14 ,wherein the image recording layer is formed on a support having a ...

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

An actinic ray-sensitive or radiation-sensitive resin composition includes: a resin, in which the actinic ray-sensitive or radiation-sensitive resin composition has a concentration of a solid content of 10% by mass or more, and in which the resin includes: a repeating unit A which is a repeating unit derived from a monomer allowing a homopolymer formed therefrom to have a glass transition temperature of 50° C. or lower, and a repeating unit B which is a repeating unit having an acid-decomposable group, a content of the repeating unit B is 20% by mole or less with respect to all the repeating units in the resin, and at least one of the repeating unit contained in the resin is a repeating unit having an aromatic ring. 1. An actinic ray-sensitive or radiation-sensitive resin composition , comprising:a resin,wherein the actinic ray-sensitive or radiation-sensitive resin composition has a concentration of a solid content of 10% by mass or more, andwherein the resin includes:a repeating unit A which is a repeating unit derived from a monomer allowing a homopolymer formed therefrom to have a glass transition temperature of 50° C. or lower, anda repeating unit B which is a repeating unit having an acid-decomposable group,a content of the repeating unit B is 20% by mole or less with respect to all the repeating units in the resin, andat least one of the repeating unit contained in the resin is a repeating unit having an aromatic ring.2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein a content of the repeating unit A is 5% by mole or more with respect to all the repeating units in the resin.3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein a content of the repeating unit A is 10% by mole or more with respect to all the repeating units in the resin.4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein the repeating unit A is a ...

PHOTORESIST COMPOSITION FOR THICK FILM AND METHOD OF FORMING THICK FILM PHOTORESIST PATTERN

A thick film photoresist composition for forming a thick film photoresist layer on a support, the photoresist composition including: a resin which exhibits changed solubility in a developing solution by the action of acid, an acid generator which generates acid by exposure, an additive, and a solvent, the additive including a compound having at least one polar group selected from the group consisting of a hydroxy group, an amino group, a mercapto group, a carboxy group and a sulfonic acid group, and the amount of the additive, relative to 100 parts by weight of the solvent being 5 to 30 parts by weight. 1. A thick film photoresist composition for forming a thick film photoresist layer on a support , the photoresist composition comprising:a resin (A) which exhibits changed solubility in a developing solution by the action of acid,an acid generator (B) which generates acid by exposure,an additive (E), anda solvent (S),wherein the additive (E) includes a compound having at least one polar group selected from the group consisting of a hydroxy group, an amino group, a mercapto group, a carboxy group and a sulfonic acid group, andthe amount of the additive (E), relative to 100 parts by weight of the solvent (S) is 5 to 30 parts by weight.2. The photoresist composition according to claim 1 , wherein the composition forms a thick film photoresist layer having a film thickness of 10 to 150 μm.3. The photoresist composition according to claim 1 , wherein the compound having at least one polar group is a compound having at least one hydroxy group.5. The photoresist composition according to claim 4 , wherein claim 4 , in formula (1) claim 4 , p is 3.6. The photoresist composition according to claim 1 , further comprising an acid diffusion control agent (D).7. A method of forming a thick film photoresist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'using the photoresist composition of to form a thick film photoresist layer on a substrate;'} ...

METHOD FOR PRODUCING POLYIMIDE PRECURSOR, METHOD FOR PRODUCING PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR PRODUCING PATTERN CURED PRODUCT, METHOD FOR PRODUCING INTERLAYER INSULATING FILM, COVER COAT LAYER OR SURFACE PROTECTIVE FILM, AND METHOD FOR PRODUCING ELECTRONIC COMPONENT

A method for producing a polyimide precursor having a structural unit represented by the following formula (1), 3. A method for producing a photosensitive resin composition comprising: producing a polyimide precursor by the method according to ; andmixing the polyimide precursor, (B) a polymerizable monomer, and (C) a photopolymerization initiator to obtain a photosensitive resin composition.4. A method for producing a pattern cured product comprising the following steps: producing a photosensitive resin composition by the method according to ;coating the photosensitive resin composition on a substrate and drying to form a photosensitive resin film;pattern-exposing the photosensitive resin film to obtain a resin film;developing the resin film after the pattern exposure using an organic solvent to obtain a pattern resin film; andheat-treating the pattern resin film.5. The method for producing a pattern cured product according to claim 4 , wherein a temperature of the heat treatment is 200° C. or less.6. A method for producing an interlayer insulating film claim 4 , a cover coat layer or a surface protective film claim 4 , which is produced using the pattern cured product produced by the method according to .7. A method for producing an electronic component claim 6 , which is produced using the interlayer insulating film claim 6 , the cover coat layer or the surface protective film produced by the method according to . The invention relates to a method for producing a polyimide precursor, a method for producing a photosensitive resin composition, a method for producing a pattern cured product, a method for producing an interlayer insulating film, a cover coat layer or a surface protective film, and a method for producing an electronic component.In recent years, the miniaturization of transistors which has supported the enhancement of the performance of computers has come to the limit of scaling law, and a laminated device structure in which semiconductor elements are ...

SOLUBLE POLYIMIDES AND DIIMIDES FOR SPIN-ON CARBON APPLICATIONS

A high-temperature-stable spin-on-carbon (“SOC”) material that fills topography features on a substrate while planarizing the surface in a one-step, thin layer coating process is provided. The material comprises low molecular weight polyimides or diimides that are pre-imidized in solution rather than on the wafer. The SOC layers can survive harsh CVD conditions and are also SC1 resistant, especially on TiN and SiOx surfaces. 1. A method of forming a microelectronic structure , said method comprising:optionally forming one or more intermediate layers on a substrate surface, there being an uppermost intermediate layer on said substrate surface, if one or more intermediate layers are present;applying a composition to said uppermost intermediate layer, if present, or to said substrate surface, if no intermediate layers are present, said composition comprising one or both of a diimide or a polyimide dissolved or dispersed in a solvent system; and{'sup': '2', 'heating said composition to form a carbon-rich layer, said carbon-rich layer having the property of presenting fewer than about 0.1 defects/cmof layer surface area if subjected to a CVD survivability test.'}2. The method of claim 1 , further comprising:optionally forming one or more additional intermediate layers on said carbon-rich layer, there being an uppermost additional intermediate layer on said substrate surface, if one or more additional intermediate layers are present;applying an imaging layer to said one or more additional intermediate layers, if present, or to said carbon-rich layer, if no additional intermediate layers are present;patterning said imaging layer to form a pattern therein;transferring said pattern to said one or more additional intermediate layers on said carbon-rich layer, if present, and to said carbon-rich layer; andcontacting said carbon-rich layer with SC1.3. The method of claim 1 , wherein said substrate surfaces comprises an intermediate layer claim 1 , and said intermediate layer is ...

STABLE PHOTORESIST COMPOSITIONS COMPRISING ORGANOSULPHUR COMPOUNDS

The present invention provides a photoresist composition Part A, comprising a carboxylic functional ethylenically unsaturated resin having an acid value equal to or greater than 10 mg KOH/g, and an organosulphur compound. The photoresist composition may further comprise a Part B, comprising a resin that may react with the carboxylic groups of Part A. The photoresist compositions are shelf-stable, alkali developable, and provide cured resists with improved surface- and through-cure, improved gloss, and reduced undercut and overcut. 1. An energy curable thermosetting resin composition comprising:a) a carboxylic functional ethylenically unsaturated resin; andb) an organosulphur compound;wherein the acid value of the composition is equal to or greater than 10 mg KOH/g; andwherein the composition is developable with an aqueous alkali solution, such that the uncured composition is removable by an aqueous alkali solution.2. (canceled)3. (canceled)4. The composition of claim 1 , wherein the organosulphur compound is a thiol or thioether.5. The composition of claim 4 , wherein the thiol is a mercaptan.6. The composition of claim 1 , further comprising a resin that is reactive with the carboxylic acid of the carboxylic functional ethylenically unsaturated resin.7. The composition of claim 6 , wherein the resin that is reactive with the carboxylic acid of the carboxylic functional ethylenically unsaturated resin is selected from the group consisting of polyepoxides claim 6 , polyoxetane claim 6 , an aminoresin claim 6 , a blocked isocyanate claim 6 , polyoxazoline claim 6 , and polycarbodiimide.8. The composition of claim 6 , prepared as a 2-pack system claim 6 , wherein:a) Part A comprises a carboxylic functional ethylenically unsaturated resin and an organosulphur compound, wherein the acid value of Part A is equal to or greater than 10 mg KOH/g; andb) Part B comprises a resin that is reactive with the carboxylic acid of Part A.9. (canceled)10. (canceled)11. The composition ...

RADIATION-SENSITIVE COMPOSITION AND RESIST PATTERN-FORMING METHOD

A radiation-sensitive composition contains: a polymer having a first structural unit that includes an acid-labile group; a first compound that generates a first acid upon an irradiation with a radioactive ray; and a second compound that generates a second acid upon an irradiation with a radioactive ray. The first acid does not substantially dissociate the acid-labile group under a condition of a temperature of 110° C. and a time period of 1 min, and the second acid dissociates the acid-labile group under a condition of a temperature of 110° C. and a time period of 1 min. The radiation-sensitive composition satisfies at least one of requirements (1) and (2): (1) the polymer includes a monovalent iodine atom; and (2) the radiation-sensitive composition further contains a third compound that is other than the first compound or the second compound, and that includes a monovalent iodine atom. 1. A radiation-sensitive composition comprising:a polymer comprising a first structural unit that comprises an acid-labile group;a first compound that generates a first acid upon an irradiation with a radioactive ray; anda second compound that generates a second acid upon an irradiation with a radioactive ray,wherein,the first acid does not substantially dissociate the acid-labile group under a condition of a temperature of 110° C. and a time period of 1 min, and the second acid dissociates the acid-labile group under a condition of a temperature of 110° C. and a time period of 1 min, andthe radiation-sensitive composition satisfies at least one of requirements (1) and (2):(1) the polymer comprises a monovalent iodine atom; and(2) the radiation-sensitive composition further comprises a third compound that is other than the first compound or the second compound, and that comprises a monovalent iodine atom.2. The radiation-sensitive composition according to claim 1 , which satisfies the condition (2).3. The radiation-sensitive composition according to claim 1 , wherein the polymer ...

RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed due to action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to action of an acid, and an acid generator component which generates an acid upon light exposure, in which the base material component contains a polymer compound which has a constitutional unit containing an acid-dissociable group represented by Formula (a01-r-1), and the acid generator component contains a compound represented by Formula (b1) but does not contain an onium salt having a halogen atom in an anion moiety. In the formula, Rrepresents an alkyl group having 4 or more carbon atoms, n represents an integer of 1 to 4, Rbrepresents a hydrocarbon group which may have a substituent and does not have a halogen atom, and Mrepresents an m-valent organic cation 3. The resist composition according to claim 1 , wherein the acid generator component (B) consists of the compound (B1).4. A method of forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film on a support using the resist composition according to ;'}exposing the resist film to light; anddeveloping the exposed resist film to form a resist pattern. The present invention relates to a resist composition and a method of forming a resist pattern.Priority is claimed on Japanese Patent Application No. 2019-136957, filed on Jul. 25, 2019, the content of which is incorporated herein by reference.In lithography techniques, for example, a step of forming a resist pattern having a predetermined shape on a resist film is performed by forming a resist film formed of a resist material on a substrate, performing selective exposure on the resist film, and performing a developing treatment. A resist material whose characteristic is changed such that the exposed portion of the resist film is dissolved in ...

Method and Apparatus of Patterning A Semiconductor Device

A method of making a semiconductor device is provided. The method includes forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group; performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment; performing a second exposure process to form a patterned photoresist layer; and developing the patterned photoresist layer. 1. A method of fabricating a semiconductor device , comprising:forming a photoresist material over a substrate, the photoresist material having a polymer that includes a backbone having a segment and a linking group, the segment including a carbon chain and an ultraviolet (UV) curable group, the UV curable group coupled to the carbon chain and to the linking group;performing a first exposure process that breaks the backbone of the polymer via decoupling the linking group from the connected UV curable group of each segment;performing a second exposure process to form a patterned photoresist layer; anddeveloping the patterned photoresist layer.2. The method of claim 1 , wherein performing the first exposure process includes performing the first exposure process without a photomask.3. The method of claim 1 , wherein performing the second exposure process includes performing the second exposure with a photomask.4. The method of claim 1 , wherein performing the first exposure process includes exposing the photoresist material to an UV light source.5. The method of claim 4 , wherein the UV light source uses wavelength between 10 nanometers and 400 nanometers.6. The method of claim 1 , wherein performing the second exposure process includes exposing the photoresist material to a radiation source that includes at least ...

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

A positive resist composition comprising a base polymer comprising recurring units (a) of an ammonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and improved dimensional uniformity. 1. A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of a carboxylic acid having an iodine or bromine-substituted hydrocarbyl group which does not contain an iodine or bromine-substituted aromatic ring and recurring units of at least one type selected from recurring units (b1) having a carboxyl group substituted with an acid labile group and recurring units (b2) having a phenolic hydroxyl group substituted with an acid labile group.4. The resist composition of wherein the base polymer further comprises recurring units (c) having an adhesive group selected from the group consisting of hydroxyl claim 1 , carboxyl claim 1 , lactone ring claim 1 , carbonate claim 1 , thiocarbonate claim 1 , carbonyl claim 1 , cyclic acetal claim 1 , ether bond claim 1 , ester bond claim 1 , sulfonic acid ester bond claim 1 , cyano claim 1 , amide bond claim 1 , —O—C(═O)—S— claim 1 , and —O—C(═O)—NH—.6. The resist composition of claim 1 , further comprising an acid generator.7. The resist composition of claim 1 , further comprising an organic solvent.8. The resist composition of claim 1 , further comprising a quencher.9. The resist composition of claim 1 , further comprising a surfactant.10. A process for forming a pattern comprising the steps of applying the positive resist composition of onto a substrate to form a resist film thereon claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed ...

PATTERN FORMING METHOD, COMPOSITION KIT AND RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THESE, AND ELECTRONIC DEVICE

There is provided a pattern forming method comprising (i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a specific resin, (ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film, (iii) exposing the film which has the top coat layer to actinic rays or radiation, and (iv) forming a pattern by developing the film which has the top coat layer after the exposing. 1. A pattern forming method comprising:(i) forming a film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition which contains (A) a resin which decomposes due to an action of an acid to change its solubility with respect to a developer and (C) a resin which has one or more groups selected from a group consisting of a fluorine atom, a group which has a fluorine atom, a group which has a silicon atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an aromatic ring group which is substituted with at least one alkyl group, and an aromatic ring group which is substituted with at least one cycloalkyl group;(ii) forming a top coat layer using a top coat composition which contains a resin (T) on the film;(iii) exposing the film which has the top coat layer to actinic rays or radiation; and(iv) forming a pattern by developing the film which has the top coat layer after the exposing.3. The pattern forming method according to claim 2 ,wherein the resin (C) contains a repeating unit which has at least two or more groups which are represented by —COO— in the structure which is represented by General Formula (KA-1) or (KB-1).4. The pattern forming method according to claim 1 ,wherein the resin (C) further has a repeating unit which has a group which changes its solubility with respect to a developer due to an effect of an acid.7. The pattern ...

Array substrate, liquid crystal display element, and radiation-sensitive resin composition

An array substrate with an insulation film which can easily be formed and the dielectric properties of which can be controlled, a liquid crystal display element including the array substrate, and a radiation-sensitive resin composition for forming the insulation film are provided. The insulation film is formed on a substrate in which an active element is formed, and then a common electrode, an interlayer insulation film, and a comb-shaped pixel electrode are provided on the insulation film to produce the array substrate. To form the interlayer insulation film, the radiation-sensitive resin composition including [X] an alkali-soluble resin; [Y] oxide particles of at least one metal selected from the group consisting of aluminum, zirconium, titanium, zinc, indium, tin, antimony, and cerium; [Z] a polyfunctional acrylate; [V] a chain transfer agent; and [W] a radiation-sensitive polymerization initiator, is used. The liquid crystal display element includes the array substrate.

PHOTOSENSITIVE COMPOSITION FOR EUV LIGHT, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

A photosensitive composition for EUV light includes a predetermined resin and a photoacid generator, or includes a predetermined resin having a repeating unit having a photoacid generating group, and satisfies Conditions 1 and 2, 1. A photosensitive composition for EUV light , comprising:a resin that has an increased polarity by the action of an acid polarity and thus, has an increased solubility in an alkali developer and a decreased solubility in an organic solvent; anda photoacid generator, orcomprising:a resin that has a repeating unit having a photoacid generating group, has an increased polarity by the action of an acid polarity and thus, has an increased solubility in an alkali developer and a decreased solubility in an organic solvent, andsatisfying Conditions 1 and 2: {'br': None, 'A=([H]×0.04+[C]×1.0+[N]×2.1+[O]×30.6+[F]×50.6+[S]×1.5+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127)\u2003\u2003Formula (1), 'Condition 1: an A value determined by Formula (1) is 0.14 or more,'}in the formula, [H] represents a molar ratio of hydrogen atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [C] represents a molar ratio of carbon atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [N] represents a molar ratio of nitrogen atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [O] represents a molar ratio of oxygen atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [F] represents a molar ratio of fluorine atoms derived from the total solid content with respect to all the atoms of the total solid content in the photosensitive composition for EUV light, [S] represents a molar ratio ...

EXPOSURE METHOD, SUBSTRATE AND EXPOSURE APPARATUS

An exposure method, a substrate and an exposure apparatus are disclosed. In one embodiment, an exposure method includes: forming a mask combination from at least two masks; and exposing, by using the mask combination, a film layer to be exposed on a base substrate, until a complete exposed pattern is formed on the film layer to be exposed. 1. An exposure method , comprising:forming a mask combination from at least two masks; andexposing, by using the mask combination, a film layer to be exposed on a base substrate, until a complete exposed pattern is formed on the film layer to be exposed.2. The method of claim 1 , wherein the step of exposing claim 1 , by using the mask combination claim 1 , the film layer to be exposed on the base substrate comprises:exposing, by using a first mask of the mask combination, a film layer to be exposed corresponding to a first region of the base substrate, while exposing, by using a second mask of the mask combination, the film layer to be exposed corresponding to a second region of the base substrate.3. The method of claim 2 , wherein orthographic projections of the first mask and the second mask on the base substrate are overlapped at least partially with each other.4. The method of claim 2 , wherein orthographic projections of the first mask and the second mask on the base substrate are not overlapped with each other.5. The method of claim 2 , wherein the first mask and the second mask are at the same side of the base substrate.6. The method of claim 2 , wherein the first mask and the second mask are at different sides of the base substrate claim 2 , respectively.7. The method of claim 5 , wherein at least one exposure light source is provided to be located at a side of the base substrate at which the first mask and the second mask are located.8. The method of claim 6 , wherein at least two exposure light sources are provided to be located at the different sides of the base substrate claim 6 , respectively.9. The method of claim 1 ...

METHOD FOR MANUFACTURING SUBSTRATE HAVING CONCAVE PATTERN, COMPOSITION, METHOD FOR FORMING CONDUCTIVE FILM, ELECTRONIC CIRCUIT AND ELECTRONIC DEVICE

Provided is a method for manufacturing a substrate having a concave pattern to be used for forming a high-definition pattern while suppressing wet-spreading and bleeding of a film-forming ink, provided is a composition to be used for manufacturing the substrate, and provided are a method for forming a conductive film, an electronic circuit, and an electronic device. 1. A method for manufacturing a substrate having a concave pattern , comprising:applying on a substrate, a composition comprising a polymer comprising an acid-dissociable group and an acid generator to form a coating film;irradiating a predetermined portion of the coating film with radiation;wherein the method does not comprise a development step.2. The method according to claim 1 , further comprising:heating the coating film after the radiation irradiation.3. The method according to claim 1 , wherein the acid-dissociable group comprises a fluorine atom.4. The method according to claim 1 , wherein a contact angle difference between a radiation-irradiated portion and a radiation-unirradiated portion with respect to tetradecane is 30° or more.5. The method according to claim 1 , wherein the irradiating produces a concave portion and a convex portion claim 1 , and the concave portion has a film thickness of 10% or more lower than the convex portion.6. The method according to claim 1 , wherein the acid-dissociable group is a group comprising at least one structural unit selected from an acetal bond and a hemiacetal ester bond.8. The method according to claim 1 , wherein the composition comprises a polymerizable compound comprising an ethylenically unsaturated bond.10. A composition comprising a polymer comprising an acid-dissociable group and an acid generator claim 1 , applied to form a coating film on a substrate in the method according to .11. A method for forming a conductive film claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'applying a composition for conductive film formation, ...

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

A positive resist composition is provided comprising a polymer comprising recurring units having a carboxyl and/or phenolic hydroxyl group substituted with an acid labile group and recurring units of tert-butyl or tert-amyl-substituted hydroxyphenyl methacrylate and having a weight average molecular weight of 1,000-500,000. The resist composition has a satisfactory effect of suppressing acid diffusion and a high resolution, and forms a pattern of good profile and minimal edge roughness after exposure. 3. The resist composition of wherein the polymer further comprises recurring units (c) having an adhesive group selected from the class consisting of hydroxyl claim 2 , carboxyl claim 2 , lactone ring claim 2 , carbonate claim 2 , thiocarbonate claim 2 , carbonyl claim 2 , cyclic acetal claim 2 , ether claim 2 , ester claim 2 , sulfonic acid ester claim 2 , cyano claim 2 , amide claim 2 , and —O—C(═O)-G- wherein G is sulfur or NH and c is a number in the range: 0 Подробнее

THINNER COMPOSITION

A thinner composition includes propyleneglycol alkylether acetate, cycloketone, and methyl 2-hydroxy isobutyrate. The thinner composition has excellent EBR, RRC, and rework properties, as well as effects of improving photoresist application uniformity, and in particular, exhibiting excellent solubility to photoresist having a high polarity, so as to be applicable to various photoresists. 1. A thinner composition comprising:propyleneglycol alkylether acetate;cycloketone; andmethyl 2-hydroxy isobutyrate.2. The thinner composition according to claim 1 , wherein the propyleneglycol alkylether acetate is at least one selected from the group consisting of propyleneglycol methylether acetate claim 1 , propyleneglycol ethylether acetate claim 1 , propyleneglycol propylether acetate and propyleneglycol butylether acetate.3. The thinner composition according to claim 1 , wherein the cycloketone has a Hansen solubility parameter of 9.0 or more.4. The thinner composition according to claim 1 , wherein the cycloketone is at least one selected from the group consisting of cyclopropanone claim 1 , cyclobutanone claim 1 , cyclopentanone and cyclohexanone.5. The thinner composition according to claim 1 , wherein the thinner composition comprises:30 to 70% by weight of the propyleneglycol alkylether acetate, based on the total weight of the thinner composition;1 to 20% by weight of the cycloketone, based on the total weight of the thinner composition; and25 to 65% by weight of the methyl 2-hydroxy isobutyrate, based on the total weight of the thinner composition.6. The thinner composition according to claim 1 , wherein the thinner composition comprises:40 to 65% by weight of the propyleneglycol alkylether acetate, based on the total weight of the thinner composition;1 to 8% by weight of the cycloketone, based on the total weight of the thinner composition; and35 to 55% by weight of the methyl 2-hydroxy isobutyrate, based on the total weight of the thinner composition.7. A method for ...

RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition including a base component (A) and an acid-generator component (B), the base component (A) including a resin component (A1) including a structural unit (a0) represented by formula (a0-1), the amount of the structural unit (a0) within the resin component (A1), based on the combined total (100 mol %) of all structural units constituting the resin component (A1) being 58 to 80 mol % (in the formula, Rarepresents an aromatic hydrocarbon group; Raand Raeach independently represents a hydrocarbon group, provided that Raand Ramay be mutually bonded to form a ring 2. The resist composition according to claim 1 , wherein claim 1 , in general formula (a0-1) claim 1 , Raand Raare mutually bonded to form a ring.3. The resist composition according to claim 1 , wherein claim 1 , in general formula (a0-1) claim 1 , Raand Raare mutually bonded to form a monocyclic aliphatic cyclic group.7. A method of forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film using the resist composition according to ;'}exposing the resist film; anddeveloping the exposed resist film to form a resist pattern.8. The method according to claim 7 , wherein the resist film is exposed to extreme ultraviolet (EUV) or electron beam (EB). The present invention relates to a resist composition and a method of forming a resist pattern.Priority is claimed on Japanese Patent Application No. 2019-153517, filed Aug. 26, 2019, the content of which is incorporated herein by reference.In lithography techniques, for example, a resist film composed of a resist material is formed on a substrate, and the resist film is subjected to selective exposure, followed by development, thereby forming a resist pattern having a predetermined shape on the resist film. A resist material in which the exposed portions of the resist film become soluble in a developing solution is called a positive-type, and a resist material in which the exposed portions of ...

NOVEL ALICYCLIC ESTER COMPOUND, AND (METH)ACRYLIC COPOLYMER AND PHOTOSENSITIVE RESIN COMPOSITION CONTAINING SAME

The present invention provides, as a chemically amplified resist, a well-balanced resist or compound which results in improved sensitivity, resolution and line edge roughness (LER) without impairing the fundamental physical properties required as a resist (e.g., pattern shape, dry etching resistance, heat resistance). A mixture of cycloaliphatic ester compounds represented by general formulae (1) to (3), and a process for preparation thereof, as well as a (meth)acrylic copolymer comprising the cycloaliphatic ester compounds of general formulae (1) to (3) and a photosensitive resin composition thereof are provided. 3. The process according to claim 2 , wherein the glycidyl (meth)acrylate compound represented by general formula (5) is reacted in an amount ranging from 0.50 to 0.99 equivalents relative to the adamantane compound represented by general formula (4).6. A photosensitive resin composition claim 4 , which comprises the (meth)acrylic copolymer according to and a photoacid generator.7. The mixture according to claim 1 , which comprises 40% to 80% of the cycloaliphatic ester compound of general formula (1) claim 1 , 10% to 30% of the cycloaliphatic ester compound of general formula (2) claim 1 , and 10% to 30% of the cycloaliphatic ester compound of general formula (3).8. A photosensitive resin composition claim 5 , which comprises the (meth)acrylic copolymer according to and a photoacid generator. The present invention relates to novel cycloaliphatic ester compounds which can be used as starting materials for optical materials (e.g., resists for KrF, ArF and F2 excimer lasers, chemically amplified resists for X-rays, electron beams or EUV (extreme ultraviolet rays)), for resin compositions excellent in heat resistance, chemical resistance and light transmittance, and for other various industrial resin compositions, and also relates to (meth)acrylic copolymers and photosensitive resin compositions comprising the same.In response to the increasing capacity of ...

COMPOSITIONS COMPRISING SULFONAMIDE MATERIAL AND PROCESSES FOR PHOTOLITHOGRAPHY

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing. 1. A method for processing a photoresist composition , comprising: (i) one or more resins,', '(ii) a photoactive component, and', '(iii) one or more materials that comprise sulfonamide substitution, wherein the one or more materials are substantially non-mixable with the one or more resins; and, '(a) applying on a substrate a photoresist composition comprising(b) immersion exposing the photoresist layer to radiation activating for the photoresist composition.2. The method of wherein the one or more materials one or more sulfonamide groups where a sulfono moiety is spaced by one or more atoms from a nitrogen of the sulfonamide group.3. The method of wherein the one or more materials that comprise sulfonamide substitution comprise one or more resins that comprise sulfonamide groups.4. The method of wherein one or more materials that comprise sulfonamide substitution further comprise one or more electron-withdrawing moieties.5. The method of wherein one or more materials that comprise sulfonamide substitution comprise one more fluorine groups or fluorine-substituted groups.6. The method of wherein one or more materials that comprise sulfonamide substitution comprise aqueous base-solubilizing groups and/or one or more photoacid-labile groups.7. A method for processing a photoresist composition claim 1 , comprising: (i) one or more resins,', '(ii) a photoactive component, and', '(iii) one or more polymers that comprise one or more sulfonamide groups, wherein the one or more polymers are distinct from the one or more resins; and, '(a) applying on a substrate a photoresist ...

PHOTORESIST COMPOSITIONS AND PATTERN FORMATION METHODS

A photoresist composition comprises a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group, wherein the first polymer does not comprise a lactone group; a second polymer comprising a first repeating unit comprising a hydroxy-aryl group, a second repeating unit comprising an acid-labile group, and a third repeating unit comprising a lactone group; a photoacid generator; and a solvent. 1. A photoresist composition comprising:a first polymer comprising a first repeating unit comprising a hydroxy-aryl group and a second repeating unit comprising an acid-labile group, wherein the first polymer does not comprise a lactone group;a second polymer comprising a first repeating unit comprising a hydroxy-aryl group, a second repeating unit comprising an acid-labile group, and a third repeating unit comprising a lactone group;a photoacid generator; anda solvent.5. The photoresist composition of any one of claim 1 , wherein the photoacid generator is non-polymeric.6. The photoresist composition of claim 1 , wherein the photoacid generator comprises a sulfonate group on the anion claim 1 , andthe photoresist composition further comprises a second photoacid generator that is non-polymeric, wherein the second photoacid generator comprises an anion that is free of sulfonate groups.7. The photoresist composition of claim 1 , further comprising a photo-decomposable quencher.8. The photoresist composition of claim 1 , further comprising a base-labile material comprising one or more base-labile groups claim 1 , wherein the base-labile material is different from the first polymer and the second polymer.9. The photoresist composition of claim 1 , wherein a weight ratio of the first polymer to the second polymer is from 1:4 to 4:1.10. A pattern formation method claim 1 , comprising:(a) applying a layer of a photoresist composition on a substrate;(b) pattern-wise exposing the photoresist composition layer ...

NOVEL PHOTORESIST HAVING SENSITIZER BONDED TO ACID GENERATOR

The present disclosure is directed to a photoresist and a method of performing a lithography process using the photoresist. The photoresist contains a polymer and a photo-acid generator. The photo-acid generator contains a sensitizer component, an acid generator component, and a bonding component that bonds the sensitizer component to the acid generator component. The bonding component may be either a single bond or a conjugated bond. The lithography process may be an EUV lithography process or an e-beam lithography process. 1. A photoresist , comprising:a polymer; and a sensitizer component;', 'an acid generator component; and', 'a bonding component that bonds the sensitizer component to the acid generator component, wherein the bonding component includes a conjugated bond., 'a photo-acid generator that contains24-. (canceled)6. The photoresist of claim 1 , wherein the sensitizer component contains one of the following: a metal claim 1 , a metal oxide claim 1 , a metal complex claim 1 , aromatic carbon ring derivatives claim 1 , or heterocyclic derivatives.7. The photoresist of claim 1 , wherein the acid generator component has the following chemical formula:{'br': None, 'sup': 1', '−, 'sub': '3', 'R—SO'}{'sup': '1', 'wherein Rcomprises an aromatic carbon ring.'}8. (canceled)1120-. (canceled)21. A photo-sensitive material claim 1 , comprising:a sensitizer component configured to absorb extreme ultraviolet (EUV) light to produce electrons;an acid generator component; anda conjugated bonding component that bonds the sensitizer component to the acid generator component.2224-. (canceled)26. The photo-sensitive material of claim 21 , wherein the sensitizer component contains one of the following: a metal claim 21 , a metal oxide claim 21 , a metal complex claim 21 , aromatic carbon ring derivatives claim 21 , or heterocyclic derivatives.27. (canceled)28. The photo-sensitive material of claim 21 , wherein the photo-sensitive material is a negative photoresist.29. The ...

PHOTORESIST, DEVELOPER, AND METHOD OF FORMING PHOTORESIST PATTERN

A photoresist composition comprises a polymer resin, a photoactive compound, an organometallic compound, an enhancement additive, and a first solvent. The enhancement additive is an ionic surfactant, a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C. 1. A photoresist composition , comprising:a polymer resin;a photoactive compound;an organometallic compound;an enhancement additive; anda first solvent,wherein the enhancement additive is an ionic surfactant, a non-ionic surfactant, or a second solvent having a boiling point of greater than 150° C.5. The photoresist composition of claim 1 , wherein a concentration of the second solvent having a boiling point of greater than 150° C. is 3 wt. % to 100 wt. % of the total weight of the second solvent and the first solvent.6. The photoresist composition of claim 1 , wherein a concentration of the ionic surfactant or non-ionic surfactant is 10 ppm to 1 claim 1 ,000 ppm based on the total weight of the ionic surfactant or non-ionic surfactant and the first solvent.7. The photoresist composition of claim 1 , wherein the organometallic compound comprises a metal oxide nanoparticle and one or more organic ligands.8. The photoresist composition of claim 1 , wherein the first solvent is one or more selected from propylene glycol methyl ether acetate (PGMEA) claim 1 , propylene glycol monomethyl ether (PGME) claim 1 , 1-ethoxy-2-propanol (PGEE) claim 1 , γ-butyrolactone (GBL) claim 1 , cyclohexanone (CHN) claim 1 , ethyl lactate (EL) claim 1 , methanol claim 1 , ethanol claim 1 , propanol claim 1 , n-butanol claim 1 , acetone claim 1 , dimethylformamide (DMF) claim 1 , isopropanol (IPA) claim 1 , tetrahydrofuran (THF) claim 1 , methyl isobutyl carbinol (MIBC) claim 1 , n-butyl acetate (nBA) claim 1 , and 2-heptanone (MAK).9. The photoresist composition of claim 1 , further comprising water at a concentration of 10 ppm to 250 ppm based on the total composition of the water claim 1 , enhancement ...

RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition including a polymeric compound having a structural unit represented by formula (a0-1) and an acid generator consisting of a compound represented by general formula (b1-1) in which Rarepresents an acid dissociable group represented by general formula (a0-r1-1); Ra, Ra, Ra, Raand Rarepresent a hydrocarbon; Yarepresents a quaternary carbon atom; Rrepresents a hydrocarbon group having at least 1 hydroxy group as a substituent; Yrepresents a single bond or a divalent linking group containing an oxygen atom; and Vrepresents a single bond, an alkylene group or a fluorinated alkylene group). 3. The resist composition according to claim 2 , wherein Rain general formula (a0-1) is a group represented by general formula (a0-r1-1-1).4. The resist composition according to claim 3 , wherein Xaa in general formula (a0-r1-1-1) represents a group which forms a monocyclic aliphatic hydrocarbon group together with Yaa.9. The resist composition according to claim 1 , wherein the amount of the structural unit (a0) based on the combined total of all structural units constituting the component (A1) is 30 to 70 mol %.10. A method of forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film on a substrate using the resist composition according to ;'}exposing the resist film; anddeveloping the exposed resist film to form a resist pattern. The present invention relates to a resist composition and a method of forming a resist pattern.This application claims priority to Japanese Patent Application No. 2016-183516, filed Sep. 20, 2016, the content of which is incorporated herein by reference.In lithography techniques, for example, a resist film composed of a resist material is formed on a substrate, and the resist film is subjected to selective exposure, followed by development, thereby forming a resist pattern having a predetermined shape on the resist film. A resist material in which the exposed portions of the ...

PHOTORESIST FOR EUV AND/OR E-BEAM LITHOGRAPHY

A photoresist including a photochromic compound suitable for extreme ultraviolet lithography or electron-beam lithography and a structure including the photoresist over a substrate are provided. A method for patterning a substrate is also provided and includes: (a) covering the substrate with the photoresist; (b) exposing the photoresist to an extreme ultraviolet or electron-beam lithographic pattern, the lithographic pattern defining an exposed portion of the photoresist and an unexposed portion of the photoresist, and thereby altering a solubility of the exposed portion towards a developing solvent; and (c) developing a patterned photoresist by contacting the developing solvent with the photoresist. 1. A photoresist for extreme ultraviolet lithography or electron-beam lithography , comprising a photochromic compound.2. The photoresist according to claim 1 , with the proviso that the photoresist is substantially free from any additives selected from photoactive generators claim 1 , cross-linking agents claim 1 , quenchers claim 1 , surfactants and sensitizers.3. The photoresist according to claim 1 , consisting of the photochromic compound.4. The photoresist according to claim 1 , wherein the photochromic compound comprises one or more photochromic moieties selected from azobenzene claim 1 , stilbene claim 1 , spiropyran claim 1 , fulgide and diarylethene.5. The photoresist according to claim 1 , wherein the photochromic compound has a molecular mass ranging from 300 to 15000 Da.6. The photoresist according to claim 1 , wherein the photochromic compound is a polymer having pendant groups comprising an azobenzene or stilbene moiety.7. The photoresist according to claim 6 , wherein the polymer is selected from a poly(Disperse Red 1 methacrylate) claim 6 , a poly[1-[4-(3-carboxy-4-hydroxyphenylazo)-benzenesulfonamido]-1 claim 6 ,2-ethanediyl] claim 6 , and a poly(N-acryloyl-phenylalanine benzyl-ester-co-acryloyloxyethyl-dimethylamino) quaternized with 4- ...

METHOD OF FORMING A NARROW TRENCH

A method of forming a pattern on a substrate is provided. The method includes forming a first layer on an underlying layer of the substrate, where the first layer is patterned to have a first structure. The method also includes depositing a grafting material on side surfaces of the first structure, where the grafting material includes a solubility-shifting material. The method further includes diffusing the solubility-shifting material by a predetermined distance into a neighboring structure that abuts the solubility-shifting material, where the solubility-shifting material changes solubility of the neighboring structure in a developer, and removing soluble portions of the neighboring structure using the developer to form a second structure. 1. A method of forming a pattern on a substrate , comprising:forming a first layer on an underlying layer of the substrate, the first layer patterned to have a first structure;depositing a grafting material on side surfaces of the first structure, the grafting material including a solubility-shifting material;diffusing the solubility-shifting material by a predetermined distance into a neighboring structure that abuts the solubility-shifting material, the solubility-shifting material changing solubility of the neighboring structure in a developer; andremoving soluble portions of the neighboring structure using the developer to form a second structure.2. The method of claim 1 , wherein:the first structure comprises a first opening of the first layer;the neighboring structure is a portion of the first layer;the first layer comprises a photoresist material; andthe second structure comprises a second opening of the first layer, wherein a latent pattern of the second opening is formed by patterned exposure of the first layer to actinic radiation prior to diffusing the solubility-shifting material.3. The method of claim 2 , wherein:the solubility-shifting material renders the neighboring structure insoluble to the developer; andthe ...

POLYMER, PHOTOSENSITIVE RESIN COMPOSITION, AND ELECTRONIC DEVICE

Provided is a polymer including a structural unit represented by the following Formula (1a); and a structural unit represented by the following Formula (1b). 5. A photosensitive resin composition which is used for forming a permanent film claim 1 , the composition comprising: the polymer according to .6. The photosensitive resin composition according to which is a positive type photosensitive resin composition.7. The photosensitive resin composition according to which is a negative type photosensitive resin composition.8. An electronic device comprising: a permanent film formed from the photosensitive resin composition according to . The present invention relates to a polymer, a photosensitive resin composition, and an electronic device.A resin film obtained by exposing a photosensitive resin composition is occasionally used as an insulating film constituting an electronic device. As techniques related to such a photosensitive resin composition, those described in Patent Documents 1 and 2 may be exemplified. Patent Document 1 describes a positive type photosensitive resin composition that includes an alkali-soluble resin, a 1,2-quinonediazide compound, and a crosslinkable compound having two or more epoxy groups. Patent Document 2 describes a radiation-sensitive resin composition containing a copolymer which includes a polymerization unit of unsaturated carboxylic acid and a polymerization unit of a specific compound, a 1,2-quinonediazide compound, and a latent acid-generating agent.[Patent Document 1] Japanese Laid-open Patent Application Publication No. 2004-271767[Patent Document 2] Japanese Laid-open Patent Application Publication No. H9(1997)-230596As a base polymer of a photosensitive resin composition for forming an interlayer insulating film, for example, an acrylic polymer has been used as described in Patent Document 2. The present inventors examined the use of an alicyclic olefin-based polymer having more excellent heat resistance, insulating properties, ...

RESIST COMPOSITION AND PATTERNING PROCESS

A resist composition comprises a metal compound obtained from reaction of a starting metal compound having formula (A-1) or a (partial) hydrolyzate or condensate or (partial) hydrolytic condensate thereof, with a di- or trihydric alcohol having formula (A-2). 1. A resist composition comprising a metal compound obtained from reaction of at least one metal compound selected from the group consisting of a metal compound having the general formula (A-1) and a metal compound obtained from (partial) hydrolysis or condensation , or (partial) hydrolytic condensation of the metal compound of formula (A-1) , with a di- or trihydric alcohol having the general formula (A-2) ,{'br': None, 'sup': '1A', 'sub': '4', 'M(OR)\u2003\u2003(A-1)'}{'sup': '1A', 'sub': 1', '6, 'claim-text': {'br': None, 'sup': '2A', 'sub': 'm', 'R(OH)\u2003\u2003(A-2)'}, 'wherein M is an element selected from the group consisting of titanium, zirconium, and hafnium, and Ris a straight or branched C-Calkyl group,'}{'sup': 2A', '2A, 'sub': 2', '20', '1', '6, 'wherein m is 2 or 3, when m is 2, Ris a divalent group selected from the group consisting of a straight, branched or cyclic C-Calkylene, alkenylene, alkynylene or aralkylene group, a straight or branched alkylene group substituted with a cyclic alkyl, cyclic alkenyl or aryl moiety, and a straight or branched alkylene group having an intervening cyclic alkylene, cyclic alkenylene or arylene moiety, said divalent group may have a cyano moiety or be separated by a carbonyl, ester, ether, thiol or NR moiety wherein R is hydrogen or a straight or branched C-Calkyl group, and when m is 3, Ris a trivalent group corresponding to the divalent group with one hydrogen eliminated.'}2. A pattern forming process comprising the steps of coating the resist composition of onto a substrate claim 1 , baking claim 1 , exposing to high-energy radiation claim 1 , and developing with a developer.3. The process of wherein the developer is alkaline water.4. The process of ...

POSITIVE PHOTORESIST COMPOSITION AND METHOD OF FORMING PATTERNED POLYIMIDE LAYER

The present invention provides a positive photoresist composition comprising a cresol-type novolac resin, a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight, the amount of the diazonaphthoquinone-based sensitizer ranges from 40 parts to 60 parts by weight, the amount of the free cresol in the cresol-type novolac resin is lower than 2 parts by weight, and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide is lower than 285 Å/s. The positive photoresist composition has excellent chemical resistance to the polyimide stripper, and can specifically improve the protective ability of the photoresist layer to the low-dielectric polyimide layer, thereby optimizing the manufacturing process and quality of the patterned polyimide layer. 1. A positive photoresist composition comprising: a cresol-type novolac resin , one of a diazonaphthoquinone-based sensitizer and an organic solvent; based on the cresol-type novolac resin with a total amount of 100 parts by weight , the amount of the diazonaphthoquinone-based sensitizer ranging from 40 parts to 60 parts by weight , the content of the free cresol in the cresol-type novolac resin being lower than 2 wt % , and the alkaline dissolution rate (ADR) of the cresol-type novolac resin in an aqueous solution of 3.5 wt % to 7 wt % tetramethylammonium hydroxide being lower than 285 Å/s.2. The positive photoresist composition as claimed in claim 1 , wherein the cresol-type novolac resin has a weight average molecular weight of 10 claim 1 ,000 to 40 claim 1 ,000.3. The positive photoresist composition as claimed in claim 1 , wherein the amount of the diazonaphthoquinone-based sensitizer ranges from 45 parts to 55 parts by weight based on the cresol-type novolac resin with the total amount of 100 parts by weight.4. The positive photoresist composition as ...

RESIST PATTERNING METHOD, LATENT RESIST IMAGE FORMING DEVICE, AND RESIST MATERIAL

A resist patterning method according to the present invention includes a resist layer forming step, a patterned exposure step, a flood exposure step, and a developing step. In the resist layer forming step, a resist layer containing a base resin, a sensitizer precursor, an acid generator, and a base generator is formed on a substrate. In the patterned exposure step, patterned exposure is performed on the resist layer to produce a sensitizer from the sensitizer precursor. In the flood exposure step, flood exposure is performed on the resist layer in which the sensitizer has been produced to produce an acid from the acid generator and produce a base from the base generator after the patterned exposure. In the developing step, the resist layer is developed after the flood exposure. 1. A resist patterning method , comprising:a resist layer forming step of forming, on a substrate, a resist layer containing a base resin, a sensitizer precursor, an acid generator, and a base generator;a patterned exposure step of performing patterned exposure on the resist layer to produce a sensitizer from the sensitizer precursor;a flood exposure step of performing flood exposure on the resist layer in which the sensitizer has been produced to produce an acid from the acid generator and produce a base from the base generator after the patterned exposure; anda developing step of developing the resist layer after the flood exposure.2. The resist patterning method according to claim 1 , wherein the flood exposure step includes:a first flood exposure step of performing first flood exposure through which the sensitizer is excited, and the acid is produced through a reaction between the excited sensitizer and the acid generator; anda second flood exposure step of performing second flood exposure through which the base is produced from the base generator.3. The resist patterning method according to claim 1 , whereinin the patterned exposure step, the sensitizer is produced through structural ...

MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE, PATTERN GENERATING METHOD AND NONTRANSITORY COMPUTER READABLE MEDIUM STORING A PATTERN GENERATING PROGRAM

According to one embodiment, stepped structure is formed on a semiconductor substrate, a processing film is formed to cover the stepped structure, a resist film is formed on the processing film in such a manner as to be thinner at a higher portion of the stepped structure than at a lower portion of the same, and the resist film and the processing film are etched to flatten the processing film. 18-. (canceled)9. A pattern generating method , comprising:acquiring step information indicating a height difference in a stepped structure;calculating a film thickness distribution of a resist film for flattening a processing film covering the stepped structure; andcalculating a crude density distribution of a light-shielding pattern of an exposure mask corresponding to the film thickness distribution.10. The pattern generating method of claim 9 , whereinan effective transmission rate distribution of the exposure mask corresponding to the film thickness distribution is calculated, andthe crude density distribution of the light-shielding pattern is calculated according to the effective transmission rate distribution.11. The pattern generating method of claim 10 , wherein a crude density of the light-shielding pattern is given with a pattern pitch of a resolution limit or less.12. The pattern generating method of claim 10 , further comprising:registering a relationship between an etch rate of the resist film and an etch rate of the processing film by each gas type; andregistering a relationship between the effective transmission rate of the exposure mask and a residual film of the resist film.13. The pattern generating method of claim 12 , wherein the residual film of the resist film is calculated from the relationship between the etch rate of the resist film and the etch rate of the processing film and the height difference in the stepped structure claim 12 , and the effective transmission rate of the exposure mask is calculated from the residual film of the resist film.14. ...

POLYMER CONTAINING PHOTOACID GENERATOR

A polymer capable of securing pattern uniformity in a photoresist pattern, the polymer containing a photoacid generator by including a structure unit represented by Chemical Formula 1a; and a structure unit represented by Chemical Formula 1b as shown in the specification. 6. The polymer (A) of claim 1 , wherein the polymer (A) is a random copolymer comprising the structure unit represented by the Chemical Formula 1a; and the structure unit represented by the Chemical Formula 1b.7. The polymer (A) of claim 1 , comprising 80 mol % to 99.9 mol % of the structure unit represented by the Chemical Formula 1a based on the total structure units included in the polymer (A).8. The polymer (A) of claim 1 , comprising 0.1 mol % to 20 mol % of the structure unit represented by the Chemical Formula 1b based on the total structure units included in the polymer (A).11. Photosensitive composition including the polymer (A) of .12. Pattern including the polymer(A) of or a cured material thereof.13. A method for forming a pattern comprising:{'claim-ref': {'@idref': 'CLM-00011', 'claim 11'}, '(1) forming a photosensitive film on a substrate using the photosensitive composition of ;'}(2) selectively exposing the photosensitive film; and(3) developing the exposed photosensitive film. This application is a 35 U.S.C. 371 National Phase Entry Application from PCT/KR2019/014567 filed on Oct. 31, 2019, designating the United States, which claims priority to and the benefits of Korean Patent Application No. 10-2018-0131891, filed with the Korean Intellectual Property Office on Oct. 31, 2018, the entire contents of which are incorporated herein by reference.The present disclosure relates to a polymer including a photoacid generator.High integration of a semiconductor has been advanced along with the development of photolithography technologies unmatched by other patterning techniques in terms of performance, reliability, and human and physical infrastructures. Particularly, as a shorter light ...

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND PHOTO MASK

The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition including, as a solvent, ethyl lactate in which one of an L isomer or a D isomer of optical isomers has a ratio of 1% or more higher than that of the other, an actinic ray-sensitive or radiation-sensitive film formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method, a photo mask, and a method for producing an electronic device. 1. An actinic ray-sensitive or radiation-sensitive resin composition , comprising a solvent comprising ethyl lactate in which one of an L isomer or a D isomer of optical isomers has a ratio of 1% or more higher than that of the other.2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein a content of ethyl lactate is 10% by mass or more with respect to a total amount of the solvent.3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , further comprising a resin having a solubility in a developer which is changed by an action of an acid.4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , further comprising a compound that generates an acid upon irradiation with actinic rays or radiation.5. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , further comprising an acid diffusion control agent.6. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 4 ,wherein an acid produced from the compound that generates an acid upon irradiation with actinic rays or radiation has a pKa from −10 to 5.7. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 3 ,wherein the resin having a solubility in a developer which is changed by the action of an acid is a resin having a group having a polarity which is increased upon decomposition by an action of an acid, and the group having a polarity ...

Positive Photosensitive Resin Composition, Photosensitive Resin Film Prepared by Using the Same, and Display Device

Disclosed are a positive photosensitive resin composition including (A) a polybenzoxazole precursor including a functional group at a terminal end thereof, wherein the functional group is dissociated by light of about 400 nm to about 550 nm wavelength region and is acidified; (B) a photosensitive diazoquinone compound; and (C) a solvent, and a photosensitive resin film and a display device using the same. 1. A positive photosensitive resin composition , comprising:(A) a polybenzoxazole precursor including a functional group at a terminal end, wherein the functional group is dissociated by light of about 400 nm to about 550 nm wavelength region and is acidified;(B) a photosensitive diazoquinone compound; and(C) a solvent:7. The positive photosensitive resin composition of claim 1 , wherein the positive photosensitive resin composition comprises:about 5 to about 100 parts by weight of the photosensitive diazoquinone compound (B); andabout 100 to about 900 parts by weight of the solvent (C)each based on about 100 parts by weight of the polybenzoxazole precursor (A).8. The positive photosensitive resin composition of claim 1 , wherein the positive photosensitive resin composition further comprises an additive including a surfactant claim 1 , a leveling agent claim 1 , a silane coupling agent claim 1 , a thermal acid generator claim 1 , or a combination thereof.9. A photosensitive resin film formed by using the positive photosensitive resin composition of .10. A display device comprising the photosensitive resin film of . This application claims priority to and the benefit of Korean Patent Application No. 10-2013-0126541 filed in the Korean Intellectual Property Office on Oct. 23, 2013, the entire disclosure of which is incorporated herein by reference.This disclosure relates to a positive photosensitive resin composition, a photosensitive resin film prepared by using the same, and a display device including the photosensitive resin film.A conventional photosensitive ...

RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN

A resist composition containing a metal compound and a polymer. A structure of the metal compound is changed upon exposure, and the metal compound exhibits changed solubility in a developing solution. The polymer segregates on a surface of a resist film in a case where the resist film is formed using the resist composition. The metal compound contains a metal ion of a metal atom of Group 3 to Group 16 in the long periodic table or a metal oxide of the metal atom, and a bonder that is bonded to the metal ion or the metal oxide. The content of the metal atom contained in the metal ion or the metal oxide is in a range of 0.2% to 3% by mass with respect to a total mass of the resist composition. 2. The resist composition according to claim 1 , wherein the polymer has the constitutional unit (a01).3. The resist composition according to claim 2 , wherein the polymer further has a constitutional unit other than the constitutional unit (a01).4. The resist composition according to claim 1 , wherein a content of the polymer is in a range of 0.1 to 50 parts by mass with respect to 100 parts by mass of the metal compound.5. A method of forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film on a support using the resist composition according to ;'}exposing the resist film; anddeveloping the exposed resist film to form a resist pattern. The present invention relates to a resist composition and a method of forming a resist pattern.Priority is claimed on Japanese Patent Application No. 2020-198591, filed Nov. 30, 2020, the content of which is incorporated herein by reference.In recent years, in the production of semiconductor elements and liquid crystal display elements, advances in lithography techniques have led to a rapid progress in pattern fining. Typically, the fining technique is carried out by shortening the wavelength (increasing the energy) of the light source for exposure.Resist materials for use with these ...

PHOTOSENSITIVE COMPOSITION

A photosensitive composition of a developable relief precursor, comprising: at least one copolymer as component C, at least one ethylenically unsaturated compound as component U, at least one photoinitiator or photoinitiator system as component P, at least one water soluble and/or water dispersible binder as component B, wherein the at least one copolymer as component C is an at least partially hydrolyzed ethylene vinyl acetate copolymer, comprising —CH—CH— groups and wherein the content of said —CH—CH— groups in the partially hydrolyzed ethylene vinyl acetate copolymer is lower than 20 mol %, preferably lower than 15 mol %, more preferably lower than 10 mol %. 125-. (canceled)26. A photosensitive composition of a developable relief precursor , comprising:at least one copolymer as component C,at least one ethylenically unsaturated compound as component U,at least one photoinitiator or photoinitiator system as component P, and{'sub': 2', '2', '2', '2, 'at least one water soluble and/or water dispersible binder as component B, wherein the at least one copolymer as component C is an at least partially hydrolyzed ethylene vinyl acetate copolymer, comprising —CH—CH— groups and wherein the content of said —CH—CH— groups in the partially hydrolyzed ethylene vinyl acetate copolymer is lower than 20 mol %.'}28. The photosensitive composition according to claim 26 , wherein component C is present in a concentration of 0.1 to 40 wt % claim 26 , and wherein the wt % is relative to the total weight of the photosensitive composition.29. The photosensitive composition according to claim 26 , wherein component C has a degree of hydrolysis claim 26 , wherein said degree of hydrolysis is in the range of 60 to 99.9%.30. The photosensitive composition according to claim 26 , wherein component C is characterized in that when said component is dissolved in water as a 4 wt % solution claim 26 , the viscosity of the solution is in the range 1 to 50 mPa s claim 26 , wherein the viscosity is ...

CHAIN SCISSION PHOTORESISTS AND METHODS FOR FORMING CHAIN SCISSION PHOTORESISTS

A photoresist is disclosed. The photoresist includes a polymer with one repeating unit and an absorbing unit. 1. A photoresist , comprising:a polymer with one repeating unit; andan absorbing unit.2. The photoresist of claim 1 , wherein the polymer includes a monomer that consist of a halogenated crylate unit.3. The photoresist of claim 1 , wherein the absorbing unit includes one or more halogen atoms including F claim 1 , Cl claim 1 , Br and I.4. The photoresist of claim 1 , wherein the absorbing unit includes Bi claim 1 , Co claim 1 , Fe claim 1 , Ge and P.5. The photoresist of claim 3 , wherein the one or more halogen atoms are configured to cause increased secondary electron generation.6. The photoresist of claim 1 , wherein portions of the polymer that are exposed to EUV become soluble to a developer.7. The photoresist of claim 1 , wherein potions of the polymer that are not exposed to EUV are not soluble to a developer.8. A photoresist claim 1 , comprising:a copolymer that includes two repeating units and a polymer that includes alpha-methyl styrene; andan absorbing unit.9. The photoresist of claim 8 , wherein one of the repeating units includes a monomer that consist of a halogenated crylate unit.10. The photoresist of claim 8 , wherein the absorbing unit includes one or more halogen atoms including F claim 8 , Cl claim 8 , Br and I.11. The photoresist of claim 8 , wherein the absorbing unit includes Bi claim 8 , Co claim 8 , Fe claim 8 , Ge and P.12. The photoresist of claim 10 , wherein the one or more halogen atoms are configured to cause increased secondary electron generation.13. The photoresist of claim 8 , wherein portions of the photoresist that are exposed to EUV become soluble to a developer.14. The photoresist of claim 8 , wherein potions of the phototresist that are not exposed to EUV are not soluble to a developer.15. A method claim 8 , comprising:forming a polymer with one repeating unit; andforming an absorbing unit.16. The method of claim 15 , ...

Positive Photosensitive Resin Composition, Photosensitive Resin Film Prepared by Using the Same, and Display Device

Disclosed are a positive photosensitive resin composition including (A) a polybenzoxazole precursor having a polydispersity of about 1 to about 1.6; (B) a photosensitive diazoquinone compound; (C) a thermal acid generator; and (D) a solvent, a photosensitive resin film using the same, and a display device. 1. A positive photosensitive resin composition , comprising:(A) a polybenzoxazole precursor having a polydispersity of about 1 to about 1.6;(B) a photosensitive diazoquinone compound;(C) a thermal acid generator; and(D) a solvent.2. The photosensitive resin composition of claim 1 , wherein the polybenzoxazole precursor has a weight average molecular weight (Mw) of about 3 claim 1 ,000 g/mol to about 30 claim 1 ,000 g/mol.4. The photosensitive resin composition of claim 1 , wherein the positive photosensitive resin composition comprises:about 5 parts by weight to about 100 parts by weight of the photosensitive diazoquinone compound (B);about 1 part by weight to about 50 parts by weight of the thermal acid generator (C); andabout 100 parts by weight to about 400 parts by weight of the solvent (D)each based on about 100 parts by weight of the polybenzoxazole precursor (A).5. The photosensitive resin composition of claim 1 , wherein the positive photosensitive resin composition further comprises an additive including a silane compound claim 1 , a surfactant claim 1 , a leveling agent claim 1 , or a combination thereof.6. A photosensitive resin film prepared using the positive photosensitive resin composition of .7. A display device including the photosensitive resin film of . This application claims priority to and the benefit of Korean Patent Application No. 10-2013-0130245 filed in the Korean Intellectual Property Office on Oct. 30, 2013, the entire disclosure of which is incorporated herein by reference.This disclosure relates to a positive photosensitive resin composition, a photosensitive resin film prepared by using the same, and a display device including the ...

Plasma Ashing for Coated Devices

A plasma ashing system includes a plasma generator configured to generate a plasma from a gas source. The system further includes a plasma reaction chamber configured to house a substrate comprising a Parylene coating, wherein the plasma reaction chamber is configured to expose surfaces of the Parylene coating on the substrate to the plasma, wherein the plasma is configured to remove portions of the Parylene coating on the substrate. 1. A plasma ashing system comprising:a plasma generator configured to generate a plasma from a gas source; anda plasma reaction chamber configured to house a substrate comprising a Parylene coating, wherein the plasma reaction chamber is configured to expose surfaces of the Parylene coating on the substrate to the plasma, wherein the plasma is configured to remove portions of the Parylene coating on the substrate.2. The plasma ashing system of claim 1 , further comprising a UV pretreatment system claim 1 , wherein the UV pretreatment system is configured to apply UV radiation to the surfaces of the Parylene coating on the substrate prior to exposing the surfaces of the Parylene coating to the plasma.3. The plasma ashing system of claim 1 , wherein the gas source comprises an argon- claim 1 , oxygen- claim 1 , hydrogen- claim 1 , or a nitrogen-containing gas claim 1 , or a fluorocarbon gas claim 1 , or a combination thereof.4. The plasma ashing system of claim 1 , further comprising a masking fixture configured to shield areas of the substrate from plasma ashing.5. The plasma ashing system of claim 1 , wherein the plasma is configured to heat the plasma reaction chamber.6. The plasma ashing system of claim 1 , wherein the plasma is generated in a plasma generation chamber separate from the plasma reaction chamber.7. The plasma ashing system of claim 1 , further comprising at least one sensor in the plasma reaction chamber claim 1 , the at least one sensor configured to determine a stop time for the exposure claim 1 , wherein the stop ...

FORMING CONDUCTIVE METAL PATTERNS USING REACTIVE POLYMERS

A conductive pattern is prepared in a polymeric layer that has (a) a reactive polymer comprising pendant tertiary alkyl ester groups, (b) a compound that provides an acid upon exposure to radiation having a λof at least 150 nm and up to and including 450 nm, and (c) a crosslinking agent. The polymeric layer is patternwise exposed to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups. The exposed regions are contacted with electroless seed metal ions to form a pattern of electroless seed metal ions. The pattern of electroless seed metal ions is then reduced to provide a pattern of corresponding electroless seed metal nuclei. The corresponding electroless seed metal nuclei are then electrolessly plated with a conductive metal. 1. A method for forming a pattern in a polymeric layer , the method comprising: (a) a reactive polymer comprising -A- recurring units comprising pendant tertiary alkyl ester groups in an amount of at least 25 mol %, based on total reactive polymer recurring units,', {'sub': 'max', '(b) a compound that provides an acid upon exposure to radiation having a λof at least 150 nm and up to and including 450 nm, which acid has a pKa of less than 2 as measured in water,'}, '(c) a crosslinking agent that is capable of reacting in the presence of the acid provided by the (b) compound to provide crosslinking in the (a) reactive polymer, and', '(d) optionally, a photosensitizer,, 'providing a polymeric layer comprising a reactive composition that comprises{'sub': 'max', 'patternwise exposing the polymeric layer to radiation having a λof at least 150 nm and up to and including 450 nm, to provide a polymeric layer comprising non-exposed regions and exposed regions comprising a polymer comprising carboxylic acid groups,'}optionally heating the polymeric layer simultaneously with or after patternwise exposing the polymeric layer but before contacting the exposed regions of the ...

PHOTORESIST COMPOSITIONS AND METHOD OF PREPARING THE SAME

The present invention provides a photoresist composition and a method of preparing the same. The photoresist composition includes a color polymer that is obtained by dye molecules grafted to a polymer molecule through chemical bonds. The photoresist composition utilizes the color polymer to replace conventional pigments to preclude conventional problems of difficult to disperse pigments in the photoresist composition, poor contrast and brightness. Since the color polymer has brilliant color, high penetration, good thermal and light stabilities, so that the photoresist composition of the present invention has better color developing effect, preferred thermal and light stabilities. The present invention provides a method of preparing a photoresist composition which reduces components in the photoresist composition and simplifies preparation process of the photoresist composition, the photoresist composition obtained thereby has better color developing effect, also has preferred thermal and light stabilities. 1. A photoresist composition , comprising a color polymer that is obtained by dye molecules grafted to a polymer molecule through chemical bonds.3. The photoresist composition according to claim 2 , wherein the dye group is azo claim 2 , anthraquinone claim 2 , xanthene claim 2 , cyanine claim 2 , dioxazine or triphenylmethane.6. The photoresist composition according to claim 1 , wherein the photoresist composition further comprises monomers claim 1 , a photo initiator and a solvent claim 1 , and each mass percentage of the components in the photoresist composition is that the color polymer accounts 2˜15 wt % of total weight of the photoresist composition claim 1 , the monomers account 3˜10 wt % of total weight of the photoresist composition claim 1 , the photo initiator accounts 0.1˜0.6 wt % of total weight of the photoresist composition claim 1 , and the solvent accounts 70˜90 wt % of total weight of the photoresist composition.7. A method of preparing the ...

PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD

Provided are a positive tone pattern forming method in which development is carried out using a developer containing an organic solvent with use of a composition containing (A) a resin which has a repeating unit containing a moiety capable of forming a polar interaction and whose polarity is decreased due to release of the polar interaction by the action of an acid or a base, or a composition containing (A′) a resin having a repeating unit containing a polar group and (B) a compound capable of forming a polar interaction with the polar group of the resin (A′); and an electronic device manufacturing method including such a pattern forming method. 1. A positive tone pattern forming method , comprising the successive steps of:a step (1′) of forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing(A′) a resin having a repeating unit having a polar group,(B) a compound capable of forming a polar interaction with the polar group of the resin (A′),(C) a compound capable of generating an acid or a base upon irradiation with actinic rays or radiation, and(D) a solvent,wherein the polar interaction formed between the polar group of the resin (A′) and the compound (B) is released by the action of the acid or the base, thus decreasing the polarity of the composition and increasing the solubility of the composition in an organic solvent;a step (2) of exposing the film; anda step (3) of developing the exposed film using a developer containing an organic solvent after exposurewherein the compound (B) is a tetraalkylammonium salt.2. The pattern forming method according to claim 1 , wherein the organic solvent contained in the developer is an ester-based solvent.3. The pattern forming method according to claim 1 , wherein an acid dissociation constant pKa(A′) of the polar group of the resin (A′) is 3.0 or more.4. The pattern forming method according to claim 1 , wherein the polar group of the resin (A′) is a carboxyl group or a hydroxyl group ...

PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK

A pattern forming method includes forming a film using an actinic ray-sensitive or radiation-sensitive resin composition, exposing the film with active light or radiation, and developing the exposed film using a developer including an organic solvent, in which the actinic ray-sensitive or radiation-sensitive resin composition contains a compound having a partial structure represented by General Formula (I). 5. The pattern forming method according to claim 1 , wherein the actinic ray-sensitive or radiation-sensitive resin composition further comprises a compound that generates an acid by active light or radiation.6. The pattern forming method according to claim 5 , wherein the compound that generates an acid by active light or radiation is a compound that generates an acid in a size for a volume of 240 Angstromor more.7. The pattern forming method according to claim 1 , which uses electron beams or extreme ultraviolet rays as the active light or radiation.8. A method for manufacturing an electronic device claim 1 , comprising the pattern forming method according to .11. A resist film formed by using the actinic ray-sensitive or radiation-sensitive resin composition according to .12. A mask blank comprising the resist film according to . This application is a Continuation of PCT International Application No. PCT/JP2015/64462, filed on May 20, 2015, which claims priority under 35 U.S.C. §119(a) to Japanese Patent Application No. 2014-157599, filed on Aug. 1, 2014. Each of the above application(s) is hereby expressly incorporated by reference, in its entirety, into the present application.1. Field of the InventionThe present invention relates to a pattern forming method using a developer including an organic solvent, which is appropriately used in an ultramicrolithography process for the manufacture of a super-LSI or a high-capacity microchip, or the like, or other photofabrication processes; a method for manufacturing an electronic device; and an electronic device. ...

MODIFIED FILM-FORMING RESIN CONTAINING ACID INHIBITOR, PREPARATION METHOD THEREFOR, AND PHOTORESIST COMPOSITION

A modified film-forming resin containing an acid inhibitor is formed by polymerizing a film-forming resin monomer and an acid inhibitor monomer. The modified film-forming resin includes film-forming functional groups and acid inhibitor functional groups, so that the modified film-forming resin can be used as a matrix resin, and has an acid inhibition effect: 2. The modified film-forming resin according to claim 1 , wherein a mass ratio of the film-forming resin monomer to the acid inhibitor monomer is (95-99.99):(0.01-5).3. The modified film-forming resin according to claim 1 , wherein the acid inhibitor monomer comprises at least one monomer selected from the group consisting of a carbon-chain-containing acid inhibitor monomer claim 1 , an ether-bond-containing acid inhibitor monomer claim 1 , an ester-bond-containing acid inhibitor monomer claim 1 , and a hydroxyl-containing acid inhibitor monomer; andthe film-forming resin monomer comprises at least one monomer selected from the group consisting of a polar film-forming resin monomer, a non-polar film-forming resin monomer, and an acid protected monomer.4. The modified film-forming resin according to claim 2 , wherein the acid inhibitor monomer comprises at least one monomer selected from the group consisting of a carbon-chain-containing acid inhibitor monomer claim 2 , an ether-bond-containing acid inhibitor monomer claim 2 , an ester-bond-containing acid inhibitor monomer claim 2 , and a hydroxyl-containing acid inhibitor monomer; andthe film-forming resin monomer comprises at least one monomer selected from the group consisting of a polar film-forming resin monomer, a non-polar film-forming resin monomer, and an acid protected monomer.7. A preparation method for the modified film-forming resin according to claim 1 , comprising the following steps:1) performing a polymerization, comprising: dissolving the film-forming resin monomer and the acid inhibitor monomer in a reaction solvent under a protective ...

MONOMER, RESIN FOR PHOTORESIST, RESIN COMPOSITION FOR PHOTORESIST, AND PATTERN FORMING METHOD

Provided is a monomer that improves solubility in organic solvents, hydrolyzability, and solubility in water after hydrolysis of a resin as well as imparts higher heat resistance to a resin. A resin for a photoresist containing a polymerization unit represented by Formula (Y), wherein Rrepresents a halogen atom or an alkyl group having from 1 to 6 carbons and having a halogen atom; Ris a substituent attached to a ring and represents a halogen atom, an alkyl group that has from 1 to 6 carbons and may have a halogen atom, a hydroxyalkyl group that has from 1 to 6 carbons and may have a halogen atom and has a hydroxyl group moiety which may be protected by a protecting group, a carboxyl group that may form a salt, or a substituted oxycarbonyl group; A represents an alkylene group having from 1 to 6 carbons, an oxygen atom, a sulfur atom, or no bond; m is the number of Rand represents an integer from 0 to 8; X represents an electron-withdrawing substituent; n is the number of X and represents an integer from 1 to 9; B represents a single bond or a linking group; and a steric position of a COOB-group attached to a polymer chain may be either endo or exo. 5. A resin composition for a photoresist claim 1 , the resin composition comprising at least the resin for a photoresist described in and a radiation-sensitive acid generator.6. A pattern forming method comprising at least: applying the resin composition for a photoresist described in to a substrate to form a coating film; exposing the coating film to light; and then dissolving the coating film with alkali.8. The resin for a photoresist according to claim 1 , wherein the halogen atom in Ris a fluorine atom or a chlorine atom.9. The resin for a photoresist according to claim 1 , wherein the alkyl group having from 1 to 6 carbons and having a halogen atom in Ris a fluoromethyl group claim 1 , a difluoromethyl group claim 1 , a trifluoromethyl group claim 1 , a 2 claim 1 ,2 claim 1 ,2-trifluoroethyl group claim 1 , or a 1 ...

PHOTOSENSITIVE RESIN COMPOSITION, WAVELENGTH CONVERSION SUBSTRATE AND LIGHT EMITTING DEVICE

A photosensitive resin composition includes a positive photosensitive resin having a photosensitive moiety that cleaves upon exposure to light, and a wavelength conversion material dispersed in the photosensitive resin. The photosensitive resin and the wavelength conversion material meet (i) to (iv): 1. A photosensitive resin composition comprising:a positive photosensitive resin having a photosensitive moiety that cleaves upon exposure to light; anda wavelength conversion material dispersed in the photosensitive resin, whereinthe photosensitive resin and the wavelength conversion material meet the following (i) to (iv):(i) the photosensitive moiety and a cleavage product of the photosensitive resin do not neutralize the wavelength conversion material;(ii) the photosensitive moiety and the cleavage product do not induce hydrolysis of the wavelength conversion material;(iii) HOMOs of the photosensitive moiety and the cleavage product are lower than a LUMO of the wavelength conversion material; and(iv) LUMOs of the photosensitive moiety and the cleavage product are higher than a HOMO of the wavelength conversion material(excluding any combination of a chemically amplified photosensitive resin with an acidic photosensitive moiety or cleavage product and an acidic wavelength conversion material).2. The photosensitive resin composition according to claim 1 , wherein the photosensitive moiety and the cleavage product of the photosensitive resin are neutral.3. The photosensitive resin composition according to claim 2 , wherein the photosensitive moiety of the photosensitive resin includes at least one selected from the group consisting of cyclobutane diimide claim 2 , o-nitrobenzyl amide claim 2 , o-nitrobenzyl ether claim 2 , methyl phenyl carbonate claim 2 , 1-benzyloxy-1-alkyl ethanol claim 2 , and disilane structures.4. The photosensitive resin composition according to claim 3 , wherein the photosensitive moiety of the photosensitive resin is a cyclobutane diimide ...

RADIATION-SENSITIVE RESIN COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMER

Provided are: a radiation-sensitive resin composition, a method of forming a resist pattern, and a polymer which enable forming a resist pattern with favorable sensitivity to exposure light and superiority in terms of CDU performance and resolution. The radiation-sensitive resin composition contains: a polymer having: a first structural unit represented by formula (1), and a second structural unit derived from a (meth)acrylic acid ester including an acid-labile group; and a radiation-sensitive acid generator. 2. The radiation-sensitive resin composition according to claim 1 , wherein Rin the formula (1) represents a hydrogen atom.3. The radiation-sensitive resin composition according to claim 1 , wherein a proportion of the first structural unit with respect to total structural units constituting the polymer is no less than 1 mol % and no greater than 20 mol %. The present application claims priority to Japanese Patent Application No. 2021-26687, filed Feb. 22, 2021 and to Japanese Patent Application No. 2021-178257, filed Oct. 29, 2021. The contents of these applications are incorporated herein by reference in their entirety.The present invention relates to a radiation-sensitive resin composition, a method of forming a resist pattern, and a polymer.A radiation-sensitive resin composition for use in microfabrication by lithography generates an acid at light-exposed regions upon an irradiation with a radioactive ray, e.g., an electromagnetic wave such as a far ultraviolet ray such as an ArF excimer laser beam (wavelength of 193 nm), a KrF excimer laser beam (wavelength of 248 nm), etc. or an extreme ultraviolet ray (EUV) (wavelength of 13.5 nm), or a charged particle ray such as an electron beam. A chemical reaction in which the acid serves as a catalyst causes a difference between the light-exposed regions and light-unexposed regions in rates of dissolution in a developer solution, whereby a resist pattern is formed on a substrate.Such a radiation-sensitive resin ...

RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST PATTERN-FORMING METHOD

A radiation-sensitive resin composition contains: a first polymer including a first structural unit that includes a phenolic hydroxy group, and a second structural unit that includes an acid-labile group; a second polymer including a fluorine atom, a silicon atom, or both, and including a third structural unit that includes an alkali-labile group; a first compound that generates upon an irradiation with a radioactive ray an acid capable of dissociating the acid-labile group within 1 minute under a temperature T° C. of no less than 80° C. and no greater than 130° C.; and a second compound that generates upon an irradiation with a radioactive ray a carboxylic acid, a sulfonic acid, or both, the carboxylic acid and the sulfonic acid each being not capable of substantially dissociating the acid-labile group within 1 minute under the temperature T° C. 1. A radiation-sensitive resin composition comprising:a first polymer comprising a first structural unit that comprises a phenolic hydroxy group, and a second structural unit that comprises an acid-labile group;a second polymer comprising a fluorine atom, a silicon atom, or both, and comprising a third structural unit that comprises an alkali-labile group;{'sup': 'X', 'a first compound that generates upon an irradiation with a radioactive ray an acid capable of dissociating the acid-labile group within 1 minute under a temperature T° C. of no less than 80° C. and no greater than 130° C.; and'}{'sup': 'X', 'a second compound that generates upon an irradiation with a radioactive ray a carboxylic acid, a sulfonic acid, or both, the carboxylic acid and the sulfonic acid each being not capable of substantially dissociating the acid-labile group within 1 minute under the temperature T° C.'}2. The radiation-sensitive resin composition according to claim 1 , wherein the acid generated from the second compound is a carboxylic acid.4. The radiation-sensitive resin composition according to claim 1 , wherein a content of the third ...

RESIST COMPOSITION FOR SEMICONDUCTOR MANUFACTURING PROCESS; RESIST FILM, RESIST-COATED MASK BLANKS, PHOTOMASK, AND RESIST PATTERNING METHOD USING SAID RESIST COMPOSITION; ELECTRONIC-DEVICE MANUFACTURING METHOD; AND ELECTRONIC DEVICE

Provided a resist composition for a semiconductor manufacturing process comprising (A) a compound expressed by General Formula (I) below: 2. The resist composition for a semiconductor manufacturing process according to claim 1 ,{'sup': '1', 'wherein Rrepresents an alkyl group having 3 to 10 carbon atoms, a cycloalkyl group having 3 to 10 carbon atoms, and an aryl group having 6 to 12 carbon atoms.'}3. The resist composition for a semiconductor manufacturing process according to claim 1 ,{'sup': '1', 'wherein Rrepresents an alkyl group having a branch structure, a cycloalkyl group, or a phenyl group.'}4. The resist composition for a semiconductor manufacturing process according to claim 1 , further comprising:(P) a compound having a phenolic hydroxy group.6. The resist composition for a semiconductor manufacturing process according to claim 1 , further comprising:(C) an acid crosslinking compound.7. The resist composition for a semiconductor manufacturing process according to claim 6 ,wherein the compound (C) includes 2 or more of hydroxymethyl groups or alkoxymethyl groups in a molecule.8. The resist composition for a semiconductor manufacturing process according to claim 1 ,wherein the resist composition is for exposure with electron beams or extreme ultraviolet rays.9. A resist film which is formed of the resist composition for a semiconductor manufacturing process according to .10. A resist-coated mask blank which is coated with the resist film according to .11. A photomask obtained by exposing and developing the resist-coated mask blank according to .12. A resist patterning method comprising:{'claim-ref': {'@idref': 'CLM-00009', 'claim 9'}, 'a step of exposing the resist film according to ; and'}a step of developing the exposed film.13. A resist patterning method comprising:{'claim-ref': {'@idref': 'CLM-00010', 'claim 10'}, 'a step of exposing the resist-coated mask blank according to ; and'}a step of developing the exposed mask blank.14. An electronic-device ...

A LITHOGRAPHIC PRINTING PLATE PRECURSOR INCLUDING (ETHYLENE, VINYL ACETAL) COPOLYMERS

A positive-working lithographic printing plate includes a support having a hydrophilic surface or a hydrophilic layer, and a heat- and/or light-sensitive coating provided including at least two different (ethylene vinyl) acetal copolymer including a plurality of ethylenic moieties A having a structure according to the following formula: 110-. (canceled)12. The printing plate precursor according to claim 11 , wherein the second (ethylene vinyl) acetal copolymer further includes a plurality of acetal moieties B and a plurality of acetal moieties F and/or acetal moieties G claim 11 , which are different from the acetal moieties B claim 11 , and which include at least one nitrogen atom.15. The printing plate precursor according to claim 14 , wherein the electron withdrawing group has a Hammett σvalue ≧0.30.16. The printing plate precursor according to claim 11 , wherein the second (ethylene vinyl) acetal copolymer further includes a plurality of the acetal moieties B claim 11 , and a plurality of acetal moieties H and/or acetal moieties I claim 11 , which include a structural moiety including a chromophoric group having a main absorption in the infrared region.17. The printing plate precursor according to claim 11 , wherein the coating further includes a binder including a sulfonamide group claim 11 , an imide group claim 11 , a nitrile group claim 11 , a urea group claim 11 , a carboxyl group claim 11 , a sulfonic acid group claim 11 , and/or a phosphoric acid group.18. The printing plate precursor according to claim 11 , wherein the coating further includes a phenolic resin selected from a novolac claim 11 , a resol claim 11 , or a polyvinylphenolic resin.19. The printing plate precursor according to claim 11 , wherein the coating includes:a first layer including the second (ethylene vinyl) acetal copolymer; anda second layer, above the first layer, including the first (ethylene vinyl) acetal copolymer.20. The printing plate precursor according claim 19 , wherein the ...

PHOTOSENSITIVE RESIN COMPOSITION, PLANOGRAPHIC PRINTING PLATE PRECURSOR, AND PLATE-MAKING METHOD FOR PLANOGRAPHIC PRINTING PLATE

A photosensitive resin composition includes a polymer compound having a structure represented by Formula 1 as a component A; and an infrared absorbent as a component B. A planographic printing plate precursor includes a support; a polymer compound, which has a structure represented by Formula 1, as a component A on the support; and a recording layer, which contains an infrared absorbent, as a component B on the support. In Formula 1, Rrepresents an (x+2) valent aromatic hydrocarbon ring group, and x represents an integer of 1 to 4. 3. The planographic printing plate precursor according to claim 1 , which is a positive type planographic printing plate precursor.4. The planographic printing plate precursor according to claim 1 ,wherein the recording layer has a two-layer structure formed of a lower layer and an upper layer, andat least one layer of the lower layer or the upper layer contains the component A and the component B.5. The planographic printing plate precursor according to claim 1 , further comprising:an interlayer between the support and the recording layer.6. A plate-making method for a planographic printing plate claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'an exposure step of image-exposing the planographic printing plate precursor according to ; and'}a development step of developing the exposed planographic printing plate precursor using an alkali aqueous solution having a pH of 8.5 to 13.5. This application is a Continuation of International Application No. PCT/JP2016/073654 filed on Aug. 10, 2016, which claims priority to Japanese Patent Application No. 2015-171038 filed on Aug. 31, 2015 and Japanese Patent Application No. 2016-129350 filed on Jun. 29, 2016. The entire contents of these applications are incorporated herein by reference.The present invention relates to a photosensitive resin composition, a planographic printing plate precursor, and a plate-making method for a planographic printing plate.In the related art, ...

METHOD FOR PRODUCING LAMINATES AND METHOD FOR PRODUCING LIQUID DISCHARGE HEADS

A method for producing a laminate of a cured material from a photosensitive resin composition () and a photosensitive resin composition (), wherein the method includes a step of obtaining a laminated material by laminating the composition () onto the composition (); a step of subjecting the laminated material to photoexposure to obtain a photocured material; a step of developing the photocured material to obtain a developed material; and a step of heating the developed material to obtain a laminate, wherein the photoexposure dose required to cure the composition () is smaller than the dose required to cure the composition (), and wherein the composition () contains an epoxy resin () having a weight-average molecular weight Mw of 5,000 to 600,000, a softening point of at least 140° C., and an epoxy equivalent weight of not more than 2,300. 2. The method for producing a laminate according to claim 1 , wherein{'b': '1', 'the photosensitive resin composition () additionally contains a photoacid generator and a solvent, and'}{'b': '2', 'the photosensitive resin composition () contains an epoxy resin, a photoacid generator, and a solvent.'}31. The method for producing a laminate according to claim 1 , wherein the photosensitive resin composition () contains an at least trifunctional epoxy resin and a difunctional epoxy resin.41. The method for producing a laminate according to claim 3 , wherein the mass blending ratio between the difunctional epoxy resin and the at least trifunctional epoxy resin (difunctional epoxy resin/at least trifunctional epoxy resin) in the photosensitive resin composition () is greater than or equal to 0.3 and less than 5.0.51. The method for producing a laminate according to claim 1 , wherein the photosensitive resin composition () contains an epoxy resin that has at least one skeleton selected from the group consisting of the bisphenol skeleton claim 1 , phenol novolac skeleton claim 1 , cresol novolac skeleton claim 1 , norbornene skeleton ...

HIGH GLASS TRANSITION TEMPERATURE POLYCARBONATES DERIVED FROM ADAMANTANE EPOXIDES

Embodiments in accordance with the present invention relate generally to polycarbonate polymers having repeat units derived from adamantane epoxide monomers and methods of using such polymers and compositions containing them. The compositions thus formed are useful in a variety of optoelectronic device fabrications. 2. The polymer according to claim 1 , wherein:{'sub': 1', '2, 'each occurrence of Rand Rindependently represents hydrogen, methyl, ethyl or phenyl; and'}{'sub': 3', '4', '5, 'each occurrence of R, Rand Rindependently represents hydrogen, methyl, ethyl or fluorine'}4. The polymer according to claim 1 , wherein the weight average molecular weight of said polymer is from about 1 claim 1 ,000 to about 300 claim 1 ,000.5. The polymer according to claim 1 , wherein said polymer exhibits a glass transition temperature of at least about 100° C.7. The polymer according to claim 6 , wherein said repeat unit of formula (V) is derived from a compound selected from one or more of the following:2-methyloxirane;2-ethyloxirane;2-isopropyloxirane;2-(tert-butyl)oxirane;2-(tert-pentyl)oxirane;2-cyclopentyloxirane;2-cyclohexyloxirane;2-cycloheptyloxirane;2-cyclooctyloxirane;1-oxaspiro[2.5]octane;1-oxaspiro[2.7]decane; and2-norbornaneoxirane.9. The process according to which includes a halogenated solvent.10. The process according to claim 8 , wherein the ligand-supported metal catalyst is selected from the group consisting of chromium claim 8 , manganese claim 8 , iron claim 8 , cobalt claim 8 , nickel claim 8 , ruthenium claim 8 , rhodium claim 8 , palladium claim 8 , iridium claim 8 , platinum and zinc.12. The process according to claim 11 , wherein R is tert-butyl and Y is chlorine.13. The process according to claim 8 , wherein it further comprises a co-catalyst claim 8 , which is N claim 8 ,N-dimethylpyridin-4-amine.14. A sacrificial polymer composition comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'a polymer according to ;'}a photoacid generator (PAG) or ...

Resist compositions

A resist composition having a) metal-containing nanoparticles and/or nanoclusters, and b) ligands and or organic linkers, wherein one or both of a) or b) are multivalent. A resist composition wherein: the resist composition is a negative resist and the nanoparticles and/or nanoclusters cluster upon crosslinking of the ligands and/or organic linkers following exposure to electromagnetic radiation or an electron beam; or the resist composition is a negative resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam allowing the nanoparticles and/or nanoclusters to cluster together; or the resist composition is a positive resist and the ligands and/or organic linkers are crosslinked and the crosslinking bonds are broken upon exposure to electromagnetic radiation or an electron beam.

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a group represented by General Formula (1) and a compound that generates an acid upon irradiation with actinic rays or radiation. 2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein in General Formula (1), the halogen atom is a fluorine atom and the halogenated alkyl group is a fluorinated alkyl group.3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,{'sub': 'R2', 'wherein Lrepresents a single bond.'}4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,{'sub': 4', '5, 'wherein at least one of Ror Rrepresents an aryl group substituted with a fluorine atom or a fluorinated alkyl group.'}5. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,{'sub': '4', 'wherein Rrepresents an aryl group substituted with a fluorine atom or a fluorinated alkyl group.'}7. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 6 ,wherein Ar represents a benzene ring group.8. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 6 ,{'sub': '1', 'wherein Lrepresents a single bond.'}9. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 6 ,{'sub': '2', 'wherein Lrepresents a single bond or a perfluoroalkylene group.'}10. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein the resin further has a repeating unit having a fluorine atom and having no acid-decomposable group.11. A resist film formed with the actinic ray-sensitive or radiation-sensitive resin composition according to .12. A pattern forming method comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film with the actinic ray-sensitive or radiation-sensitive resin composition according to ;'}exposing the resist film ...

PHENOLIC-HYDROXYL-GROUP-CONTAINING NOVOLAC RESIN AND RESIST FILM

There are provided a phenolic-hydroxyl-group-containing novolac resin and resist film that are excellent in developability, heat resistance, and conformability to substrates. The phenolic-hydroxyl-group-containing novolac resin is a polycondensate of which the essential reactive components are a phenolic-hydroxyl-group-containing compound (A) represented by Structural Formula (1) [where Ar is a structural part represented by Structural Formula (Ar-1) or (Ar-2), a phenolic-hydroxyl-group-containing compound (B) represented by Structural Formula (2) [where Ris an aliphatic hydrocarbon group having 4 to 20 carbon atoms, and j is an integer from 1 to 3], and an aldehyde compound (C). 2. The phenolic-hydroxyl-group-containing novolac resin according to claim 1 , wherein the molar ratio of the phenolic-hydroxyl-group-containing compound (A) to the phenolic-hydroxyl-group-containing compound (B) [(A):(B)] is in the range of 100:0.1 to 100:30.4. The phenolic-hydroxyl-group-containing novolac resin according to claim 3 , wherein the molar ratio of the structural part (a-1) to the structural part (b-1) [(a-1):(b-1)] in the resin is in the range of 100:0.1 to 100:30.5. The phenolic-hydroxyl-group-containing novolac resin according to claim 1 , wherein the resin has a polydispersity (Mw/Mn) ranging from 3 to6. (canceled)7. A curable composition comprising the phenolic-hydroxyl-group-containing novolac resin according to and a curing agent.8. A cured product that is produced by curing the curable composition according to .9. (canceled)10. (canceled)11. The phenolic-hydroxyl-group-containing novolac resin according to claim 1 , wherein the resin has a weight average molecular weight (Mw) ranging from 10 claim 1 ,000 to 30 claim 1 ,000.12. The phenolic-hydroxyl-group-containing novolac resin according to claim 1 , wherein Rin Structural Formula (2) or (4) is an aliphatic hydrocarbon group having 8 to 16 carbon atoms.13. A photosensitive composition comprising the phenolic-hydroxyl ...

Positive Photosensitive Resin Composition, Photosensitive Resin Film Prepared by Using the Same, and Display Device

Disclosed are a positive photosensitive resin composition including (A) an alkali soluble resin, (B) a photosensitive diazoquinone compound, (C) a thermosetting cross-linking agent represented by the following Chemical Formula 1, wherein each substituent of Chemical Formula 1 is the same as defined in the detailed description, and (D) a solvent, a photosensitive resin film using the same, and a display device. 3. The positive photosensitive resin composition of claim 1 , wherein the alkali soluble resin is a polybenzoxazole precursor claim 1 , a polyimide precursor claim 1 , or a combination thereof.6. The positive photosensitive resin composition of claim 1 , wherein the positive photosensitive resin composition comprises:about 5 to about 100 parts by weight of the photosensitive diazoquinone compound (B);about 0.5 to about 30 parts by weight the thermosetting cross-linking agent (C); andabout 100 to about 400 parts by weight of the solvent (D),each based on about 100 parts by weight of the alkali soluble resin (A).7. The positive photosensitive resin composition of claim 1 , further comprising a surfactant claim 1 , a leveling agent claim 1 , a silane coupling agent claim 1 , a thermal acid generator claim 1 , or a combination thereof.8. A photosensitive resin film manufactured using the positive photosensitive resin composition of .9. A display device comprising the photosensitive resin film of . This application claims priority to and the benefit of Korean Patent Application No. 10-2013-0144717 filed in the Korean Intellectual Property Office on Nov. 26, 2013, the entire disclosure of which is incorporated herein by reference.This disclosure relates to a positive photosensitive resin composition, a photosensitive resin film manufactured using the same, and a display device including the photosensitive resin film.Aromatic polyimide (PI) and aromatic polybenzoxazole (PBO) are representative polymers having a rigid aromatic backbone, excellent mechanical strength, ...

RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING RESIST PATTERN

A radiation-sensitive resin composition includes: a resin having a polystyrene-equivalent weight-average molecular weight of 8,000 or less; a radiation-sensitive acid generator; and a solvent. The resin includes: a structural unit A represented by formula (1); a structural unit B having a phenolic hydroxyl group; and a structural unit C having an acid-dissociable group. The structural unit B is other than the structural unit A; and the structural unit C is other than the structural unit A or B. In the formula (1), Ris a hydrogen atom or a methyl group; and Ar is a monovalent aromatic hydrocarbon group having a substituent represented by —OR. The substituent is bonded to a carbon atom next to a carbon atom bonded to a main chain of the resin. Ris a hydrogen atom or a protective group to be deprotected by action of an acid. 2. The radiation-sensitive resin composition according to claim 1 , wherein in the above formula (1) claim 1 , Ar does not have a substituent other than —OR.3. The radiation-sensitive resin composition according to claim 1 , wherein the aromatic hydrocarbon group is a phenyl group claim 1 , a naphthyl group claim 1 , an anthryl group claim 1 , a phenanthryl group claim 1 , or a pyrenyl group.5. The radiation-sensitive resin composition according to claim 4 , wherein Ris a hydrogen atom claim 4 , and R claim 4 , R claim 4 , R claim 4 , and Rare each independently an alkyl group or an alkoxy group.9. The radiation-sensitive resin composition according to claim 1 , wherein a lower limit of a content of the radiation-sensitive acid generator is 15 parts by mass per 100 parts by mass of the resin.10. A method for forming a resist pattern claim 1 , comprising:{'claim-ref': {'@idref': 'CLM-00001', 'claim 1'}, 'forming a resist film from the radiation-sensitive resin composition according to ;'}exposing the resist film; anddeveloping the exposed resist film. The present application claims priority to Japanese Patent Application No. 2021-033710 filed Mar. 3 ...

POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS

An androstane or estrane-substituted cholane as base resin is combined with an acid generator to formulate a positive resist composition, especially chemically amplified positive resist composition. 2. The positive resist composition of claim 1 , further comprising an organic solvent.3. The positive resist composition of claim 1 , further comprising a basic compound and/or surfactant.4. A pattern forming process comprising the steps of coating a substrate with the positive resist composition of claim 1 , baking the composition to form a resist film claim 1 , exposing the resist film to high-energy radiation claim 1 , and developing the exposed resist film in a developer. This non-provisional application claims priority under 35 U.S.C. §119(a) on Patent Application No. 2014-237496 filed in Japan on Nov. 25, 2014, the entire contents of which are hereby incorporated by reference.This invention relates to a positive resist composition, especially chemically amplified positive resist composition comprising a specific compound as base resin, and a pattern forming process using the resist composition.To meet the demand for higher integration density and operating speed of LSIs, the effort to reduce the pattern rule is in rapid progress. The wide-spreading flash memory market and the demand for increased storage capacities drive forward the miniaturization technology. As the advanced miniaturization technology, manufacturing of microelectronic devices at the 65-nm node by the ArF lithography has been implemented in a mass scale. Manufacturing of 45-nm node devices by the next generation ArF immersion lithography is approaching to the verge of high-volume application. The candidates for the next generation 32-nm node include ultra-high NA lens immersion lithography using a liquid having a higher refractive index than water in combination with a high refractive index lens and a high refractive index resist film, extreme ultraviolet (EUV) lithography of 13.5 nm wavelength, ...

ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

An actinic ray-sensitive or radiation-sensitive resin composition contains a resin which has a repeating unit having an alkyleneoxy chain and a repeating unit having an aromatic group, and has a concentration of the solid content of 10% by mass or more. A pattern forming method has (i) forming an actinic ray-sensitive or radiation-sensitive film having a film thickness of 1 μm or more on a substrate with an actinic ray-sensitive or radiation-sensitive resin composition containing a resin which has a repeating unit having an alkyleneoxy chain. 1. An actinic ray-sensitive or radiation-sensitive resin composition , comprising a resin which has a repeating unit having an alkyleneoxy chain and a repeating unit having an aromatic group , andwherein a concentration of the solid content in the actinic ray-sensitive or radiation-sensitive resin composition is 10% by mass or more.2. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein the concentration of the solid content is 10% to 60% by mass.3. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein the repeating unit having an alkyleneoxy chain does not have a group that decomposes by the action of an acid to generate a polar group.4. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 ,wherein the repeating unit having an alkyleneoxy chain does not have an aromatic group.5. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 1 , {'br': None, 'sub': 'n', '\ue8a0AO\ue8a0\u2003\u2003(a)'}, 'wherein the alkyleneoxy chain is represented by General Formula (a).'}in General Formula (a), A represents an alkylene group having 1 to 5 carbon atoms, n represents an integer of 2 or more, and a plurality of A's may be the same as or different from each other.7. The actinic ray-sensitive or radiation-sensitive resin composition according to claim 6 ,wherein R in General Formula (b) ...

METHOD OF FORMING REVERSED PATTERN AND METHOD OF MANUFACTURING ELECTRONIC DEVICE

A method of forming a reversed pattern including: a step of forming a resist film on a substrate using a photosensitive composition having an A value of 0.14 or more, which is determined by Expression (1); a step of exposing the resist film to light; a step of developing the exposed resist film to form a resist pattern; a step of applying a pattern reversal film forming composition such that the resist pattern is coated and thereby forming a pattern reversal film; a step of performing etch-back on the pattern reversal film and exposing a surface of the resist pattern to light; and a step of removing the resist pattern to form the reversed pattern, 1. A method of forming a reversed pattern comprising:a step of forming a resist film on a substrate using a photosensitive composition having an A value of 0.14 or more, which is determined by Expression (1);a step of exposing the resist film to light;a step of developing the exposed resist film to form a resist pattern;a step of applying a pattern reversal film forming composition such that the resist pattern is coated and thereby forming pattern reversal film;a step of performing etch-back on the pattern reversal film and exposing a surface of the resist pattern to light; and {'br': None, 'i': 'A', '=([H]×0.04+[C]×1.0+[N]×2.1+[O]×3.6+[F]×5.6+[S]×0.04+[I]×39.5)/([H]×1+[C]×12+[N]×14+[O]×16+[F]×19+[S]×32+[I]×127),\u2003\u2003Expression (1), 'a step of removing the resist pattern to form the reversed pattern,'}in Expression (1), [H] represents a molar ratio of hydrogen atoms derived from a total solid content to all atoms of the total solid content in the photosensitive composition,[C] represents a molar ratio of carbon atoms derived from a total solid content to all atoms of the total solid content in the photosensitive composition,[N] represents a molar ratio of nitrogen atoms derived from a total solid content to all atoms of the total solid content in the photosensitive composition,[O] represents a molar ratio of oxygen ...

LOW SURFACE ENERGY PHOTORESIST COMPOSITION AND PROCESS

A fluoropolymer-photoresist composition containing fluorinated polymer for containment of liquid inks in the printing of electronic devices. Methods of applying and treating the fluoropolymer-photoresist composition containing fluorinated polymer to provide low surface energy before and after processing and development of the photoresist. 1. A liquid composition comprising:a photopolymer material;a fluorinated polymer; andan organic liquid; wherein the weight amount of the photopolymer material is greater than 40% of the combined weight of the photopolymer material and the fluorinated polymer in the composition.2. The liquid composition of wherein the fluorinated polymer is selected from: fluorinated acid polymers claim 1 , or fluorinated acid-salt polymers claim 1 , or combinations thereof.3. The liquid composition of wherein the organic liquid is selected from: alcohols claim 1 , or ethers claim 1 , or ketones claim 1 , or lactones claim 1 , or alcohol-ethers claim 1 , or acetates claim 1 , or aldehydes claim 1 , or esters claim 1 , or amides claim 1 , or combinations thereof.4. The liquid composition of wherein the fluorinated acid polymer is a rapidly dried fluorinated acid polymer.5. The liquid composition of wherein the rapid drying process is a freeze drying process.6. A composition comprising:a photopolymer material having a first contact angle; anda fluorinated polymer having a second contact angle; wherein the composition has a third contact angle closer to the second contact angle than the first contact angle.7. The composition of wherein the fluorinated polymer is present in a range from 0.01% to 60% of the composition.8. The composition of wherein the fluorinated polymer is present in a range from 0.1% to 50% of the composition.9. The composition of wherein the fluorinated polymer is present in a range from 1% to 40% of the composition.10. The composition of wherein the fluorinated polymer is present in a range from 1% to 30% of the composition.11. The ...

PATTERN FORMING METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME

Provided is a pattern forming method including (A) a step of forming a planarization layer on a stepped substrate by using a composition (a) for forming the planarization layer, the composition (a) containing a solvent, (B) a step of forming a resist film on the planarization layer by using a resist composition, (C) a step of subjecting the resist film to exposure, and (D) a step of forming a first pattern by developing the resist film having undergone exposure, in which the planarization layer having undergone the step (D) is dissolved in the solvent. By the pattern forming method, there are provided a pattern forming method, which makes it possible to form a high-resolution resist pattern on a ultrafine stepped substrate (for example, a stepped substrate having groove portions having a groove width of equal to or less than 40 nm and cylindrical depressions having a diameter of equal to or less than 40 nm) and to make the resist pattern exhibit excellent peeling properties in a resist pattern peeling step, a method for manufacturing an electronic device using the pattern forming method, and an electronic device. 1. A pattern forming method comprising:(A) a step of forming a planarization layer on a stepped substrate by using a composition (a) for forming the planarization layer, the composition (a) containing a solvent;(B) a step of forming a resist film on the planarization layer by using a resist composition;(C) a step of subjecting the resist film to exposure; and(D) a step of forming a first pattern by developing the resist film having undergone exposure,wherein the planarization layer having undergone the step (D) is dissolved in the solvent.2. The pattern forming method according to claim 1 ,wherein the composition (a) does not contain a compound that causes a reaction triggered by at least either heat or light.3. The pattern forming method according to claim 1 ,wherein the planarization layer is substantially not developed by the step (D).4. The pattern ...

METHODS OF FORMING PATTERNS USING PHOTORESIST POLYMERS

A photoresist polymer comprising a first repeating unit including a halogen donor group and a second repeating unit including a protecting group connected by a sulfide bond. 18-. (canceled)9. A method of forming a pattern , comprising:forming a photoresist layer on an object layer, the photoresist layer including a polymer that comprises a first repeating unit including a halogen donor group, and a second repeating unit including a protecting group connected by a sulfide bond;performing an exposure process on the photoresist layer such that the photoresist layer is divided into an exposed portion and a non-exposed portion; andremoving the exposed portion of the photoresist layer to form a photoresist pattern.10. The method of claim 9 , wherein a halonium ion or a halogen radical is generated from the halogen donor group by the exposure process.11. The method of claim 10 , wherein the protecting group is separated from the second repeating unit by the halonium ion or the halogen radical.12. The method of claim 9 , wherein the exposure process is performed by at least one light source selected from ArF claim 9 , KrF claim 9 , an electron beam claim 9 , I-line and extreme ultraviolet (EUV).13. The method of claim 9 , wherein forming the photoresist layer includes coating a photoresist composition on the object layer claim 9 , the photoresist composition including the polymer claim 9 , a solvent and a photoacid generator.14. The method of claim 13 , wherein a proton (H) generated from the photoacid generator is trapped by the halogen donor group.15. The method of claim 14 , wherein the halogen donor group includes a nitrogen-halogen bond and a carbonyl bond claim 14 , andthe proton is trapped by the carbonyl bond so that a halonium ion is generated from the nitrogen-halogen bond.16. The method of claim 9 , wherein the exposed portion is more hydrophilic than the non-exposed portion.17. The method of claim 16 , wherein the exposed portion includes an acetal structure to ...

RESIST COMPOSITIONS AND SEMICONDUCTOR FABRICATION METHODS USING THE SAME

Disclosed are resist compositions and semiconductor device fabrication methods using the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein Rto Rare as defined herein. 2. The resist composition of claim 1 , further comprising:a polymer; anda quencher.3. The resist composition of claim 1 , wherein one or both of Rand Rare devoid of hydrogen.4. The resist composition of claim 1 , wherein{'sub': 3', '4', '5', '6', '7, 'R, R, R, R, and Rare each hydrogen,'}{'sub': 8', '9, 'Rand Rare each independently a halogen-substituted or halogen-unsubstituted C1 or C2 alkyl group or a halogen-substituted or halogen-unsubstituted C6 to C20 aryl group,'}{'sub': '10', 'Ris an unsubstituted C1 or C2 alkyl group or an unsubstituted C6 to C20 aryl group, and'}{'sub': '11', 'Ris a halogen-substituted or halogen-unsubstituted C1 or C2 alkyl group or a halogen-substituted or halogen-unsubstituted C6 to C20 aryl group.'}6. The resist composition of claim 4 , further comprising a photo-acid generator claim 4 ,wherein the compound of Chemical Formula 1 has a lowest unoccupied molecular orbital (LUMO) energy level that is greater than that of the photo-acid generator.7. The resist composition of claim 6 , wherein the compound of Chemical Formula 1 has the lowest unoccupied molecular orbital (LUMO) energy level that is equal to or greater than about −1.12 eV.8. The resist composition of claim 1 , wherein{'sub': 1', '8', '2', '9', '2, 'sup': −', '−, 'Ris RCOor RSO, and'}{'sub': 8', '9', '10', '11, 'R, R, R, and Rare each independently a halogen-substituted or halogen-unsubstituted C1 and C2 alkyl group or a halogen-substituted or halogen-unsubstituted C6 to C20 aryl group.'}11. The resist composition of claim 8 , wherein the compound of Chemical Formula 1 has a lowest unoccupied molecular orbital (LUMO) energy level that is less than that of diphenyliodonium triflate and that of triphenylsulfonium triflate.13. A semiconductor device ...

Positive Photosensitive Resin Composition, Photosensitive Resin Film, and Display Device Using the Same

Disclosed are a positive photosensitive resin composition including (A) an alkali soluble resin including a repeating unit represented by the following Chemical Formula 1; (B) a photosensitive diazoquinone compound; and (C) a solvent, and a photosensitive resin film and a display device including the same. 2. The positive photosensitive resin composition of claim 1 , wherein the m and n are independently integers of 1 or 2.3. The positive photosensitive resin composition of claim 1 , wherein the alkali soluble resin is an alternating copolymer claim 1 , a block copolymer claim 1 , a random copolymer of polyimide-polyhydroxyamide claim 1 , or a combination thereof.4. The positive photosensitive resin composition of claim 1 , wherein the alkali soluble resin is an alternating copolymer of polyimide-polyhydroxyamide.5. The positive photosensitive resin composition of claim 1 , wherein the alkali soluble resin has a weight average molecular weight of about 1 claim 1 ,000 g/mol to about 20 claim 1 ,000 g/mol.6. The positive photosensitive resin composition of claim 1 , wherein the solvent is N-methyl-2-pyrrolidone claim 1 , γ-butyrolactone claim 1 , N claim 1 ,N-dimethylacetamide claim 1 , dimethylsulfoxide claim 1 , diethylene glycoldimethylether claim 1 , diethylene glycoldiethylether claim 1 , diethylene glycoldibutylether claim 1 , propylene glycolmonomethylether claim 1 , dipropylene glycolmonomethylether claim 1 , propylene glycolmonomethyl ether acetate claim 1 , methyl lactate claim 1 , ethyl lactate claim 1 , butyl lactate claim 1 , methyl-1 claim 1 ,3-butylene glycol acetate claim 1 , 1 claim 1 ,3-butylene glycol-3-monomethylether claim 1 , methyl pyruvate claim 1 , ethyl pyruvate claim 1 , methyl-3-methoxy propionate claim 1 , or a combination thereof.7. The positive photosensitive resin composition of claim 1 , wherein the positive photosensitive resin composition further comprises an additive comprising a surfactant claim 1 , a leveling agent claim 1 , a ...

POSITIVE-TYPE PHOTOSENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD, THIN FILM TRANSISTOR ARRAY SUBSTRATE, AND LIQUID CRYSTAL DISPLAY DEVICE

A positive-type photosensitive resin composition, a pattern forming method, a thin film transistor array substrate, and a liquid crystal display device are provided. The positive-type photosensitive resin includes a novolac resin (A), an alkali-soluble resin (B), an ester (C) of an o-naphthoquinone diazide sulfonic acid, and a solvent (D). The alkali-soluble resin (B) includes a first alkali-soluble resin (B-1) produced by polymerizing a mixture. The mixture includes an epoxy compound (i) and a compound (ii), wherein the epoxy compound (i) has at least two epoxy groups, and the compound (ii) has at least one carboxylic acid group and at least one ethylenically unsaturated group. 1. A positive-type photosensitive resin composition , comprising:a novolac resin (A);an alkali-soluble resin (B);an ester (C) of an o-naphthoquinone diazide sulfonic acid; anda solvent (D);wherein the alkali-soluble resin (B) contains a first alkali-soluble resin (B-1), the first alkali-soluble resin (B-1) is produced by performing a polymerization on a mixture; the mixture contains an epoxy compound (i) and a compound (ii), the epoxy compound (i) has at least two epoxy groups, and the compound (ii) has at least one carboxylic acid group and at least one ethylenically unsaturated group.4. The positive-type photosensitive resin composition of claim 1 , wherein based on 100 parts by weight of the novolac resin (A) claim 1 , a usage quantity of the alkali-soluble resin (B) is 5 parts by weight to 50 parts by weight claim 1 , a usage quantity of the ester (C) of an o-naphthoquinone diazide sulfonic acid is 5 parts by weight to 50 parts by weight claim 1 , and a usage quantity of the solvent (D) is 100 parts by weight to 1000 parts by weight; and based on a usage quantity of 100 parts by weight of the alkali-soluble resin (B) claim 1 , a usage quantity of the first alkali-soluble resin (B-1) is 30 parts by weight to 100 parts by weight.5. The positive-type photosensitive resin composition of ...

PRINT PROCESS FOR COLOR CONVERSION LAYER USING POROUS HOST OR POSITIVE PHOTORESIST

A method of fabricating a multi-color display includes forming a host matrix over a display having an array of light emitting diodes. The host matrix is sensitive to ultraviolet light. A first plurality of light emitting diodes in a first plurality of wells are activated to illuminate a portion of the host matrix to cause the portion of the host matrix to develop internal porous structures. A first photo-curable fluid including a first color conversion agent is dispensed. The first plurality of light emitting diodes in the first plurality of wells are activated to illuminate and cure the first photo-curable fluid to form a first color conversion layer over each of the first plurality of light emitting diodes, and an uncured remainder of the first photo-curable fluid is removed. 1. A micro-LED display , comprising:a backplane;a plurality of light-blocking walls disposed on the backplane forming a plurality of walls;an array of light emitting diodes in respective wells electrically integrated with backplane circuitry of the backplane; anda first color converting structure disposed over each of a first plurality of light emitting diodes from the array of light emitting diodes, the first color converting structure including a porous first host layer with pores at least partially filled by a photo-cured first color conversion agent to convert light from the first plurality of light emitting diodes to light of a first color.2. The micro-LED display of claim 1 , comprising a second color converting structure disposed over each of a different second plurality of light emitting diodes from the array of light emitting diodes claim 1 , the second color converting structure including a porous host layer with pores at least partially filled by a photo-cured second color conversion agent to convert light from the second plurality of light emitting diodes to light of a different second color.3. The micro-LED display of claim 2 , comprising a third color converting structure ...

REAGENT FOR ENHANCING GENERATION OF CHEMICAL SPECIES

A reagent that enhances acid generation of a photoacid generator and composition containing such reagent is disclosed. 17.-. (canceled)8. A polymer , comprising:first substituent that contains at least one aromatic group, a hydroxy group on the aromatic group, and an electron accepting group on the aromatic group; anda second substituent that contains a reactive substituent reacting with a chemical species.9. The polymer of claim 8 , wherein the electron accepting group is one of halogen group claim 8 , alkyl group including at least one halogen atom claim 8 , nitro group claim 8 , cyano group claim 8 , and nitro group.10. (canceled)11. The polymer according to claim 8 , further comprising:a function substituent that generates the chemical species or improves adhesiveness to a surface on which a composition including the polymer is placed,wherein the function substituent does not inhibit a generation of the chemical species.12. The polymer according to claim 8 , wherein the polymer does not contain a substituent that inhibits a generation of the chemical species.13. The polymer according to claim 8 , further comprising:at least one of a precursor substituent that generates the chemical species and a reagent substituent that enhances a generation of the chemical species.14. The polymer according to claim 13 , wherein:the chemical species is acid; andthe reagent substituent enhances a generation of the chemical species.1521.-. (canceled)22. The polymer of claim 8 , wherein the reactive substituent comprises a protective group.23. The polymer of claim 22 , wherein the protective group is an ester group or an ether group.24. A composition comprising:{'claim-ref': {'@idref': 'CLM-00008', 'claim 8'}, 'the polymer of .'}25. A polymer comprising: at least one aromatic group,', 'a hydroxy group on the aromatic group, and', 'an electron accepting group selected from the group consisting of halogen group, alkyl group including at least one halogen atom, nitro group, cyano ...

POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND METHOD FOR FORMING PATTERNS BY USING THE SAME

The present invention relates to a positive photosensitive resin composition and a method for forming patterns by using the same. The positive photosensitive resin composition includes a novolac resin (A), an ortho-naphthoquinone diazide sulfonic acid ester (B), a hydroxycompound (C) and a solvent (D). The novolac resin (A) further includes a hydroxy-type novolac resin (A-1) and a xylenol-type novolac resin (A-2). The hydroxy-type novolac resin (A-1) is synthesized by condensing hydroxyl benzaldehyde compound with aromatic hydroxyl compound. The xylenol-type novolac resin (A-2) is synthesized by condensing aldehyde compound with xylenol compound. The postbaked positive photosensitive resin composition can be beneficially formed to patterns with high film thickness and well cross-sectional profile. 1. A positive photosensitive resin composition , comprising:novolac resin (A), wherein the novolac resin (A) comprises hydroxy-type novolac resin (A-1) and xylenol-type novolac resin (A-2), the hydroxy-type novolac resin (A-1) is formed by condensing hydroxyl benzaldehyde compound with aromatic hydroxyl compound, and the xylenol-type novolac resin (A-2) is synthesized by condensing aldehyde compound with xylenol compound;ortho-naphthoquinone diazide sulfonic acid ester (B);a hydroxycompound (C); anda solvent (D).2. The positive photosensitive resin composition of claim 1 , wherein the ortho-naphthoquinone diazide sulfonic acid ester (B) comprises hydroxybenzophenone and/or hydroxyaryl compound and/or (hydroxyphenyl) hydrocarbon compound.3. The positive photosensitive resin composition of claim 1 , wherein the hydroxycompound (C) comprises hydroxybenzophenone and/or hydroxyaryl compound and/or (hydroxyphenyl) hydrocarbon compound.4. The positive photosensitive resin composition of claim 1 , wherein based on an amount of the novolac resin (A) as 100 parts by weight claim 1 , an amount of the hydroxy-type novolac resin (A-1) is 50 to 95 parts by weight claim 1 , an amount of ...

POSITIVE TONE DEVELOPMENT OF CVD EUV RESIST FILMS

The present disclosure relates to post-application treatment of a radiation-sensitive film to provide a hardened resist film. In some instances, such films can be used to form a pattern by a positive tone wet development process. 1. A method comprising:providing a substrate to receive a pattern;applying a radiation-sensitive resist film on a surface of the substrate;conducting a post-application bake (PAB) or a post-application treatment of the radiation-sensitive resist film, thereby providing a hardened resist film;exposing the hardened resist film to a patterning radiation source, thereby providing an exposed resist film; anddeveloping the exposed resist film to form the pattern by a positive tone wet development process.2. The method of claim 1 , wherein the radiation-sensitive film comprises an Extreme Ultraviolet (EUV)-sensitive film claim 1 , and wherein the patterning radiation source is an EUV radiation source.3. The method of claim 1 , wherein said conducting comprises condensing the radiation-sensitive resist film by increasing a content of metal-oxygen-metal bonds and/or decreasing a content of metal-hydroxyl bonds.4. The method of claim 1 , wherein said applying comprises a dry deposition process.5. The method of claim 4 , wherein said applying comprises: {'br': None, 'sub': a', 'b, 'MR\u2003\u2003(I),'}, 'providing one or more precursors comprising a structure having formula (I) or (II) to the surface of the substratewherein:M is a metal or an atom having a high EUV absorption cross-section;each R is, independently, H, halo, optionally substituted alkyl, optionally substituted cycloalkyl, optionally substituted cycloalkenyl, optionally substituted alkenyl, optionally substituted alkynyl, optionally substituted alkoxy, optionally substituted alkanoyloxy, optionally substituted aryl, optionally substituted amino, optionally substituted bis(trialkylsilyl)amino, optionally substituted trialkylsilyl, oxo, an anionic ligand, a neutral ligand, or a ...