SOLARZELLE

Thin film photovoltaic devices and methods of making the same

Thin film photovoltaic devices and methods of making the same

SCHOTTKY BARRIER AMORPHOUS SILICON SOLAR CELL

DEVICES INCLUDING A LAYER OF AMORPHOUS SILICON

PROCEDURE FOR THE PRODUCTION OF A PHOTOACTIVE LAYER GROUP

DÜNNSCHICHT-SOLARZELLE UND VERFAHREN ZU IHRER HERSTELLUNG

TIFF 00000004.TIF 297 212 ...

DÜNNSCHICHT-SOLARZELLE UND VERFAHREN ZU IHRER HERSTELLUNG

PHOTOSENSITIVE ELEMENT, PHOTOVOLTAIC CELL, AND METHOD OF PREPARING THE ELEMENT

Photovoltaic cells

A photovoltaic cell incorporating a semiconductor element (10) composed entirely of a single conductivity type. A biasing agent (26) having a work function different from that of the semiconductor element overlies a face of the element and produces a band bending and thus an electric field in a space charge region. Electrodes are in contact with the semiconductor element within the space charge region. Carriers generated by light absorbed in the semiconductor element are accelerated toward the electrodes by the field.

SCHOTTKY BARRIER PHOTOVOLTAIC DETECTOR AND PROCESS

CERMET LAYER FOR AMORPHOUS SILICON SOLAR CELLS

RCA 72,279 CERMET LAYER FOR AMORPHOUS SILICON SOLAR CELLS A transparent high work function metal cermet forms a Schottky barrier in a Schottky barrier amorphous silicon solar cell and adheres well to the P+ layer in a PIN amorphous silicon solar cell.

BARRIER TYPE PHOTOVOLTAIC CELLS WITH ENHANCED OPEN-CIRCUIT VOLTAGE, AND PROCESS OF MANUFACTURE

BARRIER TYPE PHOTOVOLTAIC CELLS WITH ENHANCED OPEN-CIRCUIT VOLTAGE, AND PROCESS AND MANUFACTURE A cadmium telluride photovoltaic cell is produced with increased conversion efficiency arising from enhanced open-circuit voltage. Such voltage is achieved by altering the surface of the crystalline cadmium telluride that contacts the barrier metal by heating the cadmium telluride in the presence of oxygen prior to depositing the barrier metal.

METHOD FOR MAKING PHOTORESPONSIVE AMORPHOUS GERMANIUM ALLOYS AND DEVICES

SEMICONDUCTOR DEVICE

The present invention is a semiconductor device which has one or a plurality of spherical semiconductor elements as its main component. The spherical semiconductor element is a spherical semiconductor crystal with a photovoltaic part and a pair of electrodes. The present invention is also a semiconductor device of a semiconductor photocatalyst, photodiode or solar battery. The present invention is also a semiconductor device which has one or a plurality of spherical semiconductor elements as its main component. This spherical semiconductor element is a spherical semiconductor crystal with a pn junction and a pair of electrodes. Semiconductor devices of light-emitting diodes, various diodes, or display panels are disclosed. Referring to semiconductor photocatalyst 1 of the figure, a p-type diffusion layer 6 and a pn junction 7 is formed on an n-type silicon semiconductor spherical crystal. There is formed a micro photocell 17 which includes: photovoltaic part 16; a pair of electrode s 14 ...

Einrichtung zur Umsetzung von Licht- in Strom- oder Spannungsänderungen.

PHOTOVOLTAIC DETECTOR CADMIUM SULFIDE, SCHOTTKY BARRIER AND METHOD OF MAKING SAME.

PHOTOSENSITIVE AMORPHOUS DEVICE HAS MULTIPLE CELLS

IMPROVEMENTS BRING TO THE SOLAR CELLS TO SILICON

SEMI-CONDUCTEURS AMORPHES ET PROCEDE POUR LEUR PREPARATION

SEMI-CONDUCTEUR AMORPHE. LE SEMI-CONDUCTEUR AMORPHE DE L'INVENTION PEUT RESISTER A DES TEMPERATURES ELEVEES ET PRESENTE UNE BONNE RESISTANCE MECANIQUE. IL COMPREND UNE SUBSTANCE SEMI-CONDUCTRICE AMORPHE RENFERMANT PLUSIEURS ELEMENTS DONT AU MOINS LE BORE, LE CARBONE, L'AZOTE OU L'OXYGENE OU BIEN ENCORE LE SILICIUM ET LE GERMANIUM, FORMES DANS UNE MATRICE SOLIDE AMORPHE DE RECEPTION OU IL EXISTE UN ORDRE LOCAL, UN INTERVALLE D'ENERGIE ET UNE ENERGIE D'ACTIVATION ELECTRIQUE. UNE SUBSTANCE MODIFICATRICE EST AJOUTEE A LA MATRICE DE RECEPTION, PAR EXEMPLE UN METAL DE TRANSITION, UNE TERRE RARE OU BIEN DU CARBONE OU DU BORE, SUBSTANCE QUI PERMET DE MODIFIER LES CONFIGURATIONS ELECTRONIQUES DE LADITE MATRICE A TEMPERATURES AMBIANTE ET SUPERIEURE. REGULATION DE COURANTS, PAR EXEMPLE JONCTIONS P-N (DIODES, TRANSISTORS, ETC.).

CELLULE PHOTOVOLTAIQUE ET PILE SOLAIRE UTILISANT UNE TELLE CELLULE

L'INVENTION VISE A L'OBTENTION DE CELLULES PHOTOVOLTAIQUES A BAS PRIX DE REVIENT, NOTAMMENT EN UTILISANT UNE COUCHE AUSSI MINCE QUE POSSIBLE DE COMPOSES SEMICONDUCTEURS CAPABLES DE PRESENTER L'EFFET PHOTOVOLTAIQUE, ET CELA SOUS LA FORME POLYCRISTALLINE. A CET EFFET, SUR UNE FEUILLE DE MOLYBDENE 1, ON DEPOSE UNE COUCHE AUXILIAIRE 2 DE GERMANIUM POLYCRISTALLIN POUR FACILITER LES DEPOTS ULTERIEURS, PUIS UNE COUCHE POLYCRISTALLINE INTERMEDIAIRE 30 D'ARSENIURE DE GALLIUM ET D'ALUMINIUM ET UNE COUCHE ACTIVE 3 D'ARSENIURE DE GALLIUM POLYCRISTALLIN, LA PRESENCE DE LA COUCHE INTERMEDIAIRE A BANDE INTERDITE PLUS LARGE QUE CELLE DE LA COUCHE ACTIVE TENDANT A COMPENSER L'EFFET, SUR LE RENDEMENT, DE LA FAIBLE EPAISSEUR DE LA COUCHE ACTIVE. APPLICATION AUX PILES SOLAIRES A FAIBLE COUT.

AMORPHOUS SEMICONDUCTORS AND PROCESS FOR THEIR PREPARATION

OPTICAL DEVICE HAS SEMICONDUCTOR.

Une couche photoabsorbante (12) en InGaAs du type N et une couche (13) en InP du type N (couche de semiconducteur d'un premier type de conductivité) qui est une couche servant de fenêtre et une couche de multiplication sont stratifiées les unes au-dessus des autres sur un substrat (11) en InP du type N. Par diffusion sélective d'impuretés et implantation d'ions, une région (14) en InP du type P (région en semiconducteur d'un second type de conductivité) est formée sur une partie de la surface supérieure de la couche (13) en InP du type N. Les surfaces supérieures de la couche (13) en InP du type N et de la région (14) en InP du type P sont couvertes par un film (15) de protection de surfaces. Une électrode de cathode (16) (première électrode) est connectée à la face inférieure du substrat (11) en InP du type N. Une électrode d'anode (17) de forme annulaire (seconde électrode) est connectée à la surface supérieure de la région (14) en InP du type P. Une électrode basse tension (19) est agencée ...

METAL-SEMICONDUCTOR OPTICAL DEVICE

PURPOSE: A metal-semiconductor optical device is provided to increase light absorption efficiency by growing a thin metal film thinly and uniformly, and the lowering the density of interface energy. CONSTITUTION: A device region surrounded by an insulation film(13) is formed by removing a portion of the insulation film(13) using a mask defining the device region. A single atom interface layer(10) is formed by evaporating V-group element such as Sb and As on the surface of silicon substrate(11) as thin as a single atom layer while the temperature of silicon substrate(11) is set to 400-450°C. Subsequently, a thin metal layer(12) is formed on the single atom interface layer(10) and a reflection preventing film(14) is formed on the thin metal layer(12). An electrode(15) connected to the thin metal film(12) is formed on a side of the reflection preventing film(14) and an electrode(16) is formed on the backside of silicon substrate(11). COPYRIGHT 2001 KIPO ...

APERFEICOAMENTO EM PILHA FOTOVOLTAICA

PHOTODETECTOR

MICROSTRUCTURE ENHANCED ABSORPTION PHOTOSENSITIVE DEVICES

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.

Imaging and tracking sensor designed with a sandwich structure

A multi-function imaging and tracking device is disclosed. A first Schottky diode array lying in a first plane performs a tracking and acquisition function. A second Schottky diode array lying in a second plane performs an imaging function. The first array is a low resolution, high-speed array while the second array is a high resolution, low-speed array. The second array having an operational parameter to be adjusted by the first array.

Thin film photoelectromotive force element having multi-thin films stacked semiconductor layer

Improved pin type and Schottky time thin film photoelectromotive force elements which exhibit desired effects in short-circuit current (Isc), open-circuit voltage (Voc), fill factor (F.F.), photoelectric conversion efficiency and S/N ratio, characterized in that at least one of the n-type semiconductor layer and the p-type semiconductor layer is constituted with a non-single-crystal silicon semiconductor layer comprised of a plurality of stacked non-single-crystal silicon films of 100 ANGSTROM or less thickness containing 1 to 10 atomic % of hydrogen atoms.

Dynamic Schottky barrier MOSFET device and method of manufacture

A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.

Vertical unipolar component

A vertical unipolar component formed in a semiconductor substrate. An upper portion of the substrate includes insulated trenches filled with a vertical multiple-layer of at least two conductive elements separated by an insulating layer, the multiple-layer depth being at most equal to the thickness of the upper portion.

SEMICONDUCTOR DEVICE WITH AMORPHOUS SILICON LAYER

AMORPHOUS PHOTOELECTRIC CONVERSION ELEMENT

PURPOSE: To simplify the manufacturing process by a method wherein a metal having a work function smaller than said function of an amorphous intrinsic semiconductor layer is used for the III layer formed on said semiconductor layer. CONSTITUTION: A clear electrode 6 is formed on a glass substrate 5, and a p- layer 2 as the I layer is formed, and thereafter the amorphous intrinsic semiconductor layer (i-layer) 3 is formed. Using the metal such as Mg having a work function smaller than that of the i-layer 3, a metallic layer 13 is laminated on said layer 3 as the III layer. The metallic layer 13 and the i-layer 3 form an ohmic junction, and then a built-in electric field is formed in the i-layer 3 according to size of the work functions of both, resulting in good action as the title element. Therefore, since a thin film forming device for n-layer formation is unnecessitated, the manufacturing process can be simplified. COPYRIGHT: (C)1984,JPO&Japio ...

光電変換デバイス及び当該光電変換デバイスの作製方法

Быстродействующий фотодетектор

Изобретение относится к оптоэлектро- никё и может найти применение в волоконно-оптических линиях связи, оптических системах обработки информации. Сущность изобретения: в быстродействующем фотодетекторе на основе встречно-штыревой структуры контактов металл-полупроводник зазор во встречно-штыревой структуре выполнен в виде двухзаходной спирали, 3 ил.

БЫCTPOДEЙCTBУЮЩИЙ ФOTOДETEKTOP

Verfahren zur Herstellung eines Dünnschicht-Photovoltaik-Systems und Dünnschicht-Photovoltaik-System

Beschrieben wird ein Verfahren zur Herstellung eines Dünnschicht-Photovoltaik-Systems (2) mit einer flächigen Metallchalkogenid-Verbindungshalbleiterschicht (7) als Absorber für Sonnenlicht und einer auf der Metallchalkogenid-Verbindungshalbleiterschicht (7) aufgebrachten Metallschicht (8), wobei die Metallchalkogenid-Verbindungshalbleiterschicht (7) und die Metallschicht (8) an ihrer Kontaktfläche einen Schottky-Kontakt ausbilden. Die beschriebene technische Lösung zeichnet sich dadurch aus, dass die Metallchalkogenid-Verbindungshalbleiterschicht (7) durch Aufbringen einer Dispersion, die nanoskalige Partikel mit einem Durchmesser von ca. 3 bis 30 nm enthält, auf ein transparentes Substratmaterial (12) hergestellt wird, wobei die Schichtstärke der auf das Substratmaterial aufgebrachten Metallchalkogenid-Verbindungshalbleiterschicht (7) ca. 150 nm bis ca. 2500 nm beträgt.

VERFAHREN ZUM HERSTELLEN VON AMORPHEM SILICIUM UND NACH DIESEM VERFAHREN HERGESTELLTE VORRICHTUNG

Plasmon-enhanced photo voltaic cell

PROCESS FOR PRODUCTING ELECTRICALLY CONDUCTIVE COMPOSITE POLYMER ARTICLE

A process for producing an electrically conductive composite polymer article, which comprises contacting at least one polymerizable compound selected from the group consisting of heterocyclic compounds, derivatives thereof, aniline and aniline derivatives with a polymer article containing a polymerization catalyst for the polymerizable compound, and polymerizing the polymerizable compound to prepare an electrically conductive polymer on the surface of the polymer article or on the surface and in the polymer article. Schottky-barrier diodes and patterned electrodes can also be produced by utilizing the process. According to the process, process steps can be simplified, and various devices having excellent conductivity and transparency can be produced.

PHOTOVOLTAIC SCHOTTKY-BARRIER ELEMENTS

High temperature amorphous semiconductor member and method of making the same

An amorphous semiconductor member capable of withstanding high temperatures and having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality of elements, including one of the low atomic weight elements boron, carbon, germanium, nitrogen or oxygen, forming a host matrix having structural configurations with local order and electronic configurations providing an energy gap and an electrical activation energy. Added to the matrix is a modifier material such as a transition metal or rare earth element, having orbitals which interact with the matrix to form electronic states in the energy gap which modify substantially the electronic configurations of the matrix. When the matrix is formed from boron, carbon, silicon or germanium boron or carbon may be the modifier. The forming of the matrix and addition of the modifier material is preferably done by co- sputtering.

AMORPHOUS SEMICONDUCTORS

Semiconductor device

ENHANCED OPEN CIRCUIT VOLTAGE IN AMORPHOUS SILICON PHOTOVOLTAIC DEVICES

An amorphous silicon photovoltaic device having enhanced photovoltage and increased longevity is produced by treatment of a barrier forming region of the amorphous silicon in the presence of a partial pressure of sulfur and oxygen.

GRADIENT DOPING IN AMORPHOUS SILICON

GRADIENT DOPING IN AMORPOUS SILICON A method for producing a gradient doping profile in amorphous silicon comprising providing a substrate, coating said substrate with a layer of dopant material selected from the group consisting of antimony, phosphorous, aluminum, lithium, arsenic or a mixture thereof; sputter deposting a layer of photoconductive amorphous silicon while concurrently heating and applying a positive bias voltage to said dopant layer, where during said deposition the dopant material diffuses into the amorphous silicon layer under the combined driving forces of the applied bias voltage and the elevated temperature.

THIN-FILM PHOTOELECTRIC CONVERSION DEVICE AND METHOD OF MANUFACTURING THIN-FILM PHOTOELECTRIC CONVERSION DEVICE

Disclosed is a thin-film photoelectric conversion element of which the thickness can be reduced to several tens of nanometers or less. Also disclosed is a method for manufacturing the thin-film photoelectric conversion element. The thin-film photoelectric conversion element comprises a metal silicide layer that is formed on a surface of a silicon substrate as a result of the diffusion of a first metal and silicon, an electroconductive thin-film layer that is formed on a second metal thin-film layer-stacked site on the surface of the silicon substrate, and a silicon diffused part that is arranged around the surface of the silicon substrate and between the metal silicide layer and the electroconductive thin-film layer and is formed as a result of the diffusion of nano-particles of silicon. When light is applied to the metal silicide layer or the electroconductive thin-film layer that forms a Schottky interface with the silicon substrate in the stacking direction, a photoinduced current is ...

SCHOTTKY BARRIER AMORPHOUS SILICON SOLAR CELL WITH THIN DOPED REGION ADJACENT METAL SCHOTTKY BARRIER

FRONT FILM CONTACT SOLAR CELL

FRONT FILM CONTACT SOLAR CELL A solar cell (20) includes a photovoltaic junction (26) having a front face (24), a back face (32), and a lateral side (42). A first electrical contact (28) for the photovoltaic junction (26) includes a first electrically conductive contact pad (38) located on the back face (32) of the photovoltaic junction (26). A second electrical contact (30) includes a transparent, electrically conductive layer (40) on the front face (24) of the photovoltaic junction (26), a second electrically conductive contact pad (46) located on the back face (32) of the photovoltaic junction (26), and an electrically conductive trace (48) extending from the electrically conductive layer (40) on the front face (24) of the photovoltaic junction (26), over the lateral side (42), and to the second contact pad (46) on the back face (32) of the photovoltaic junction (26). The transparent, electrically conductive layer (40) is preferably a transparent conducting oxide such as indium tin oxide ...

Flexible heterojunction film solar cell and preparation method thereof

The invention discloses a flexible heterojunction film solar cell and a preparation method thereof. The flexible heterojunction film solar cell comprises a monocrystalline silicon base with the thickness of 3-30[Mu]m, and graphene covering the upper surface of the monocrystalline silicon base. The lower surface of the monocrystalline silicon base is provided with a metal back electrode. The monocrystalline silicon base and the grapheme form a schottky junction. The preparation method of flexible heterojunction film solar cell comprises the steps of thinning the monocrystalline silicon to the thickness of 3-30 [Mu]m; preparing the metal back electrode at the back side of the monocrystalline silicon; transferring the grapheme to the upper surface of the monocrystalline silicon thin film; preparing a front electrode on the surface of the grapheme. The flexible heterojunction film solar cell is advantageous in that the graphene and the monocrystalline silicon are combined, forming a schottky ...

METHOD FOR REALIZATION Of a LAYER OUT OF AMORPHOUS SILICON AND ELECTRONIC DEVICE IMPLEMENTING THIS PROCESS

IMPROVEMENTS BRING TO THE SOLAR CELLS TO SILICON

프닉타이드-함유 흡수층과 방출층 사이에 전기적으로 삽입된 칼코게나이드 박막을 포함하는 광기전력 장치

... 본 발명은 절연층이 하나 이상의 프닉타이드-함유 필름과 접속되어 있는, MIS 및 SIS 장치의 절연층의 품질을 개선시키기 위한 전략을 제공한다. 본 발명의 개념은 i-ZnS와 같은 칼코게나이드를 포함하는 매우 얇은 (20 nm 이하) 절연 필름이, 놀랍게도 프닉타이드 반도체를 포함하는 MIS 및 SIS 장치의 우수한 터널 배리어라는 발견에 적어도 부분적으로 기초한다. 하나의 실시양태에서, 본 발명은 하나 이상의 프닉타이드 반도체; 하나 이상의 칼코게나이드를 포함하고 0.5 nm 내지 20 nm 범위의 두께를 갖는, 상기 반도체 영역에 전기적으로 연결된 절연 영역; 및 상기 절연 영역이 집전체 영역과 반도체 영역 사이에 전기적으로 삽입되도록 하는 방식으로 상기 반도체 영역에 전기적으로 연결된 정류 영역을 포함하는 광기전력 장치에 관한 것이다.

CELL FOTOVOLTAICA AND SOLAR STACK USING THE SAID CELL

PROCESSO DE FABRICAR UMA LIGA AMORFA FOTOSSENSIVEL, A RESPECTIVA LIGA E DISPOSITIVO FOTOSSENSIVEL

ELECTRONIC GATE ENHANCEMENT OF SCHOTTKY JUNCTION SOLAR CELLS

Various systems and methods are provided for Schottky junction solar cells. In one embodiment, a solar cell includes a mesh layer formed on a semiconductor layer and an ionic layer formed on the mesh layer. The ionic layer seeps through the mesh layer and directly contacts the semiconductor layer. In another embodiment, a solar cell includes a first mesh layer formed on a semiconductor layer, a first metallization layer coupled to the first mesh layer, a second high surface area electrically conducting electrode coupled to the first metallization layer by a gate voltage, and an ionic layer in electrical communication with the first mesh layer and the second high surface area electrically conducting electrode. In another embodiment, a solar cell includes a grid layer formed on a semiconductor layer and an ionic layer in electrical communication with the grid layer and the semiconductor layer.

Semiconductor device and method of manufacturing the same

A semiconductor device includes a semiconductor substrate, and a MOS transistor provided on the semiconductor substrate and having a channel type of a first conductivity, the MOS transistor comprising a semiconductor region of the first conductivity type including first and second channel regions, gate insulating films provided on the first and second channel regions, a gate electrode provided on the gate insulating films, and first and second source/drain regions which are located at a distance from each other so as to sandwich the first and second channel regions, the first and second source/drain regions contacting the semiconductor region of the first conductivity type and forming a Schottky junction.

Nanotube semiconductor devices

Semiconductor devices are formed using a thin epitaxial layer (nanotube) formed on sidewalls of dielectric-filled trenches. In one embodiment, a semiconductor device is formed in a semiconductor layer on a semiconductor substrate of opposite conductivity type and having trenches formed therein where the trenches extend from the top surface to the bottom surface of the semiconductor layer. The semiconductor device includes a first epitaxial layer formed on sidewalls of the trenches where the first epitaxial layer is substantially charge balanced with adjacent semiconductor regions. In another embodiment, a semiconductor device is formed in a first semiconductor layer having trenches and mesas formed thereon where the trenches extend from the top surface to the bottom surface of the first semiconductor layer. The semiconductor device includes semiconductor regions formed on the bottom surface of the mesas of the first semiconductor layer.

Photovoltaic device having polycrystalline base

A photovoltaic device comprising a polycrystalline base having an electrically conductive grid affixed to the surface of the device to which illumination is to be applied, said grid effecting a rectifying junction with the base and at the same time functioning as a current carrying contact, said grid being arranged so that substantially all of the individual crystallites are contacted at least once thereby, while at the same time maintaining the coverage of the base by said grid to a minimum.

GALLIUM NITRIDE LIGHT EMITTING DEVICES ON DIAMOND

Gallium nitride devices are formed on a diamond substrate, such as for light emitting diodes as a replacement for incandescent light bulbs and fluorescent light bulbs. In one embodiment, gallium nitride diodes (or other devices) are formed on diamond in at least two methods. A first method comprises growing gallium nitride on diamond and building devices on that gallium nitride layer. The second method involves bonding gallium nitride (device or film) onto diamond and building the device onto the bonded gallium nitride. These devices may provide significantly higher efficiency than incandescent or fluorescent lights, and provide significantly higher light or energy density than other technologies. Similar methods and structures result in other gallium nitride semiconductor devices.

Schottky barrier diode and method of producing the same

An epitaxial layer 12 is formed on a semiconductor substrate comprising silicon carbide, a Schottky electrode 14 is formed surface of the epitaxial layer 12, a noble metal contact electrode is formed on the Schottky electrode 14, and after the formation this contact electrode 15, heat treatment is conducted at a temperature of from 600 to 1,000° C.

Integrated circuit structure and manufacturing method thereof

An integrated circuit structure is described, and includes a substrate, a contact window, and a Schottky contact metal layer. A heavily doped region and a lightly doped region are formed in the substrate. The contact window is disposed above the heavily doped region, and the Schottky contact metal layer is disposed above the lightly doped region. The Schottky contact metal layer and the substrate form a Schottky diode. The material of the contact window is different from that of the Schottky contact metal layer.

INFRARED PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD

A hybrid photovoltaic (PV) device is composed of a first electrode layer, a semiconductor substrate, a semiconductor PV layer, and a bottom electrode that forms a Shottcky junction between said bottom metal electrode and the PV layer. Because of existence of the Shottcky junction, the PV cell permits light to electricity conversion over a wide-range of light wavelengths, from the so-called visible light (between 350 nm to 900 nm wavelength) to the infrared light (over 900 nm wavelength). Also described is a method for manufacturing a hybrid PV device. The method of manufacturing comprises performing the steps of cleaning a semiconductor substrate; introducing an inert gas under vacuum and a high temperature to form a semiconductor PV layer having a high resistivity on a first side of the substrate; forming a metal bottom layer on the semiconductor PV layer to create a Shottcky junction between the metal layer and said semiconductor PV layer; and forming a transparent electrode layer on ...

VERFAHREN ZUR HERSTELLUNG EINES ELEKTRISCH LEITENDEN VERBUNDPOLYMERFORMKOERPERS

II-VI and III-V thin film photovoltaic devices

The photovoltaic device comprises an nCdS / nCdTe heterojunction and a Schottky barrier contact to the CdTe surface, where the CdTe surface portion is converted to p-type conductivity. A thin insulating protective layer may be provided between the Schottky metal contact and the CdTe semiconductor. A multi heterojunction device is also described where the band gap energy of the semiconductor layers decreases from the wide band gap CdS window layer towards the Schottky back contact.

Amorphous silicon photovoltaic devices.

An amorphous silicon photovoltaic device having enhanced photovoltage and increased longevity is produced by treatment of a barrier forming region of the amorphous silicon in the presence of a partial pressure of sulfur dioxide.

SEMICONDUCTOR DEVICE HAVING AN AMORPHOUS SILICON ACTIVE REGION

Schottky barrier photovoltaic detector and process

A platinum-cadmium sulfide Schottky barrier photovoltaic UV/IR detector is fabricated with both the ohmic and barrier contacts 70, 72 located on the same side of the cadmium sulfide substrate 30 to facilitate wire attachment by high- speed bonding techniques. A titanium-gold-titanium infrared shield structure 32 is deposited directly on the substrate and is utilized to provide a connection between the ohmic contact and the substrate. An insulating layer 34 of silicon dioxide covers the shield structure. A thin layer 36 of platinum is deposited directly on the substrate in a small central optically active area surrounded by the insulated shield structure. A metal boundary layer 42A overlies the periphery of the platinum layer and prevents the barrier contact metalization from affecting the properties of the Schottky barrier. Both the ohmic and barrier contacts 70, 72 may be formed of a titanium adhesion layer and a layer of gold. ...

Stacked photoresponsive cells of amorphous semiconductors

In a stacked arrangement of solar cells at least one of the cells is of amorphous Si containing F (a-Si : F) together with a bandgap modifier (e.g. Ge, Sn, C or N) which makes its spectral response different from a second cell. The cells may be separated by transparent insulating layers or may be in direct contact. Each cell may be of a-Si : F with different bandgaps which may be graded within the absorbing region. The cells may be of the Schottky, MIS, or PIN types.

MULTIPLE CELL PHOTORESPONSIVE AMORPHOUS ALLOY DEVICES

THIN FILM PHOTOVOLTAIC DEVICES AND METHODS OF MAKING THE SAME

Apparatus and method for photovoltaic energy production based on internal charge emission in a solid-state heterostructure

Solar cell and solar cell unit

PHOTOVOLTAIC CELLS

Solar cell and solar cell unit

ENHANCED OPEN CIRCUIT VOLTAGE IN AMORPHOUS SILICON PHOTOVOLTAIC DEVICES

SCHOTTKY BARRIER SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME

A SCHOTTKY BARRIER SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the ...

HIGH TEMPERATURE AMORPHOUS SEMICONDUCTOR MEMBER AND METHOD OF MAKING SAME

An amorphous semiconductor member which is capable of withstanding high temperatures and of having good toughness characteristics comprises an amorphous semiconductor material including a composition of a plurality elements, at least one of which is a low atomic weight element comprising boron, carbon, nitrogen or oxygen, formed in a solid amorphous host matrix having structural configurations which have local rather than long range order and electronic configurations providing an energy gap and an electrical activation energy. It also includes a modifier material added to the amorphous host matrix, such as a transition metal or rare earth element, having orbitals which interact with the amorphous host matrix and form electronic states in the energy gap which modify substantially the electronic configurations of the amorphous host matrix at room temperature and above. The amorphous semiconductor member may also comprise an amorphous host matrix formed from boron, carbon silicon or germanium ...

ELECTRET SEMICONDUCTOR SOLAR CELL

An induced junction solar cell includes a silicon semiconductor wafer with an aluminium ohmic contact layer on one surface, a thin oxide layer on the other surface, a grid-type aluminium contact on the oxide layer and an electret, i.e. charged outer polymer layer covering the grid-type contact and exposed oxide layer. The electric field of trapped charges in the electret penetrate the semiconductor and separate photogenerated carriers. Minority carriers are extracted through a rectifying grid-type contact to permit a build-up of potential and a barrier for majority carriers.

GRAPHITE-BASED PHOTOVOLTAIC CELLS

The present invention uses lithographically patterned graphite stacks as the basic building elements of an efficient and economical photovoltaic cell . The basic design of the graphite-based photovoltaic cells includes a plura lity of spatially separated graphite stacks, each comprising a plurality of vertically stacked, semiconducting graphene sheets (carbon nanoribbons) brid ging electrically conductive contacts, and forming a Schottky contact with o ne of said electrically conductive contacts.

Silicon nano-wire array or silicon nano-pore array Schottky junction type solar battery and preparation method thereof

The invention discloses a silicon nano-wire array or silicon nano-pore array Schottky junction type solar battery and a preparation method thereof. the preparation method is characterized in that an Al metal membrane back electrode layer is arranged on the bottom face of a P type silicon substrate layer and serves as a back lead-out electrode; the P type silicon substrate layer is arranged on the Al metal membrane back electrode layer and serves as a base region of the solar battery; a P type silicon nano-wire array layer is arranged on the upper surface of the P type silicon substrate layer, the surface of the P type silicon nano-wire array layer is coated with Ti metal layer and the Ti metal layer and the P type silicon nano-wire array layer form a Schottky junction; a Ti grid type electrode is arranged on the Ti metal layer and serves as a front lead-out electrode; and the silicon nano-wire array also can be replaced with a silicon nano-pore array. The preparation method has simple process ...

Preparation method for nanometer silicon-based graphene solar energy battery

A METHOD TO PRODUCE A GRADIENT OF DOPING IN AMORPHOUS SILICON AND FOR FORMING AN OHMIC CONTACT ON INTRINSIC PHOTOCONDUCTIVE AMORPHOUS SILICON

PHOTOVOLTAIC ARRAY

DISPOSITIF PHOTOVOLTAIQUE AU SILICIUM AMORPHE PRODUISANT UNE TENSION ELEVEE EN CIRCUIT OUVERT

DISPOSITIF PHOTOVOLTAIQUE PRODUISANT UNE TENSION ACCRUE ET COMPRENANT UN CORPS DE SILICIUM AMORPHE. LE DISPOSITIF COMPREND UNE COUCHE DE SILICIUM AMORPHE PHOTOCONDUCTEUR 14 DEPOSE SUR UN SUBSTRAT 10 AVEC INTERPOSITION D'UNE COUCHE 12 FORMANT UN CONTACT OHMIQUE, LA COUCHE DE SILICIUM AMORPHE AYANT ETE EXPOSEE A UN GAZ CONTENANT UNE PRESSION PARTIELLE D'OXYGENE ET DE SOUFRE AFIN D'EN MODIFIER LA SURFACE EN 15, PUIS UNE JONCTION DE DIODE ETANT FORMEE PAR DEPOT 16 SUR LA SURFACE AINSI EXPOSEE. APPLICATION ESSENTIELLEMENT A LA REALISATION DE PILES SOLAIRES.

SEMICONDUCTOR DEVICE HAS ACTIVE AMORPHOUS SILICON AREA

METHOD FOR PREPARING a CONDUCTING COMPOSITE POLYMERIC ARTICLE OF the ELECTRICITY AND USE OF THIS ARTICLE IN the PREPARATION Of a DIODE HAS BARRIER OF SCHOTTKY AND Of an ELECTRODE CONFIGURATION PARTICULIERE HAS

SOLAR CELL WITH AMORPHOUS SILICON

ORGANIC SEMICONDUCTORS AS WINDOW LAYERS FOR INORGANIC SOLAR CELLS

Photodetector

A photodetector is provided with a metal-semiconductor junction for measuring infrared radiation. In one embodiment, the photodetector includes structures to achieve localized surface plasmon resonance at the metal-semiconductor junction stimulated by incident light. The photodetector hence has prompted response and broadband spectra region for photon detection. The photodetector can be used for detecting varied powers of incident light with wavelength from visible to mid-infrared range (300nm~20 [mu]m).

Cutting blade detection mechanism for a cutting machine

A cutting blade detection mechanism for a cutting machine, having a blade passing gap into which a cutting blade for cutting a workpiece passes, and a light emitting means and a light receiving means both of which face the blade passing gap, wherein the cutting blade mechanism comprises cleaning water supply nozzles for supplying cleaning water to the end surfaces of the light emitting means and the light receiving means and air supply nozzles for supplying air to the end surfaces of the light emitting means and the light receiving means.

Chemical sensor using chemically induced electron-hole production at a schottky barrier

Electron-hole production at a Schottky barrier has recently been observed experimentally as a result of chemical processes. This conversion of chemical energy to electronic energy may serve as a basic link between chemistry and electronics and offers the potential for generation of unique electronic signatures for chemical reactions and the creation of a new class of solid state chemical sensors. Detention of the following chemical species was established: hydrogen, deuterium, carbon monoxide, and molecular oxygen. The detector ( 1 b) consists of a Schottky diode between an Si layer and an ultrathin metal layer with zero force electrical contacts.

СПОСОБ ИЗГОТОВЛЕНИЯ СОЛНЕЧНОГО ЭЛЕМЕНТА НА ОСНОВЕ БАРЬЕРА ШОТКИ

Использование: энергетика, радио-, электронная промышленность, приборостроение, где используются автономные маломощные источники питания. В способе изготовления солнечного элемента с барьером Шотки, включающем осаждение на проводящую подложку или любую подложку с проводящим слоем базового слоя полупроводникового материала, рекристаллизацию указанного полупроводникового материала указанного базового слоя для повышения среднего размера зерна, осаждение активного слоя полупроводникового материала поверх указанного базового слоя и формирование поверх указанного активного слоя внешнего слоя, при этом внешний слой включает в себя массив малоразмерных проводниковых кластеров (или нитей), каждый из которых находится в электрическом контакте с указанным активным слоем и изолирован от другого прозрачным диэлектрическим материалом, а поверх него формируют многослойную периодическую структуру чередующихся слоев металл/оксид. Способ согласно изобретению позволяет изготавливать солнечные элементы с большими ...

УСОВЕРШЕНСТВОВАНИЕ ФОТОЭЛЕКТРИЧЕСКИХ ЭЛЕМЕНТОВ С ПЕРЕХОДОМ ШОТТКИ ПОСРЕДСТВОМ ЭЛЕКТРОННОГО УПРАВЛЕНИЯ

... 1. Фотоэлектрический элемент, содержащий:сетчатый слой, сформированный на полупроводниковом слое, при этом сетчатый слой содержит электропроводящую, прозрачную пористую сетку нанотрубок; и ионный слой, сформированный на сетчатом слое, при этом ионный слой просачивается через пористую сетку нанотрубок и непосредственно контактирует с полупроводниковым слоем.2. Фотоэлектрический элемент, содержащий:первый сетчатый слой, сформированный на полупроводниковом слое, при этом первый сетчатый слой содержит пористую сетку из нанотрубок;первый слой металлизации, соединенный с первым сетчатым слоем;второй электропроводящий электрод с большой площадью поверхности, соединенный с первым слоем металлизации с помощью источника управляющего напряжения; иионный слой, электрически связанный с первым сетчатым слоем и вторым электропроводящим электродом с большой площадью поверхности.3. Фотоэлектрический элемент по п.2, в котором внутренняя разность потенциалов перехода между первым сетчатым слоем и полупроводниковым ...

Способ изготовления фоточувствительных приборов

Zweiseitige Solarzelle

Zweiseitige Solarzelle, mindestens aufweisend ein transparentes Substrat, auf dem eine TCO-Schicht als erster Kontakt angeordnet ist, auf dem sich eine aktive Schicht befindet, die mit einer weiteren TCO-Schicht als zweiter Kontakt versehen ist, dadurch gekennzeichnet, dass in der aktiven Schicht (4) Metalloxid-Nanostäbe (3) mit in Richtung zweiten Kontakt (5) sich verjüngendem Querschnitt angeordnet sind, wobei die Grundfläche der Metalloxid-Nanostäbe (3) mit dem größeren Querschnitt direkt am ersten Kontakt (2) anliegt, und die aktive Schicht (4) wie eine Matrix die Metalloxid-Nanostäbe (3) vollständig in ihrer Höhe bedeckt, wobei die Spitzen der Metalloxid-Nanostäbe (3) Punktkontakte bilden.

SCHOTTKY BARRIER SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME

Arrangement for the transformation of light variations into changes of electric current or voltage

... 310,874. Siemens & Halske Akt.- Ges. May 2, 1928, [Convention date]. Light-sensitive cells. -The photo-electric effect is produced at the boundarv between two materials for example copper 1 and cupric oxide 2, where there is a resistance independent of the thickness of the two materials. The surface of the copper or other material is coated with a layer about 1/20th mm. in thickness of a compound of the metal, for example the oxide or sulphide, and this layer is covered with a grid-shaped electrode 3 of good conducting material. Alternatively the call is illuminated through the metal layer, which is made of foil permeable to light and covered by an integral wide-meshed grid (Fig. 2, not shown). An electric potential less than one volt is applied to the layers from a potentiometer 5 in a direction depending on whether the metal or the compound is illuminated.

Cadmium telluride based multi-layer graded band gap photovoltaic device

A 11-Vi and 111-V thin film photovoltaic device comprises multiple layers, where the band gap energy of the semiconductor layers decreases form a wide band gap CdS window layer towards a Schottky metal contact at the surface of a CdTe layer. A thin surface portion of the CdTe layer is converted to p-type conductivity. A thin insulating layer may be provided between the Schottky metal contact and the CdTe semiconductor layer.

Graphene Solar Cell

A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion and a plurality of fingers extending from the at least one bus bar portion.

Graphene Solar Cell And Waveguide

A solar cell includes a semiconductor portion, a graphene layer disposed on a first surface of the semiconductor portion, and a first conductive layer patterned on the graphene layer, the first conductive layer including at least one bus bar portion, a plurality of fingers extending from the at least one bus bar portion, and a refractive layer disposed on the first conductive layer.

CIGS Solar Cell and Method for Manufacturing thereof

A CIGS solar cell includes a glass substrate, a light absorbing surface and a photoelectric transducer structure. The glass substrate includes a plurality of arrayed protrusions. The arrayed protrusions protrude from at least one surface of the glass substrate, wherein the depth from the top of the arrayed protrusions to the bottom of the arrayed protrusions is predetermined. The light absorbing surface is located on the top of the arrayed protrusions, the side of the arrayed protrusions and the surface of the glass substrate between the arrayed protrusions. The photoelectric transducer structure includes an n-type semiconductor layer, an i-type semiconductor layer and a p-type semiconductor layer.

Buffer layer formation

Manufacturing a photovoltaic device can include a vapor transport deposition process.

Method and system for application of an insulating dielectric material to photovoltaic module substrates

A method and related system are provided for depositing a dielectric material into voids in one or more of the semiconductor material layers of a photovoltaic (PV) module substrate. A first side of the substrate is exposed to a light source such that light is transmitted through the substrate and any voids in the semiconductor material layers on the opposite side of the substrate. The light transmitted through the voids is detected and a printer is registered to the pattern of detected light to print a dielectric material and fill the voids.

Intermixing of cadmium sulfide layers and cadmium telluride layers for thin film photovoltaic devices and methods of their manufacture

Cadmium telluride thin film photovoltaic devices are generally disclosed including an intermixed layer of cadmium sulfide and cadmium telluride between a cadmium sulfide layer and a cadmium telluride layer. The intermixed layer generally has an increasing tellurium concentration and decreasing sulfur concentration extending in a direction from the cadmium sulfide layer towards the cadmium telluride layer. Methods are also generally disclosed for manufacturing a cadmium telluride based thin film photovoltaic device having an intermixed layer of cadmium sulfide and cadmium telluride.

Compositionally-graded band gap heterojunction solar cell

A photovoltaic device includes a composition modulated semiconductor structure including a p-doped first semiconductor material layer, a first intrinsic compositionally-graded semiconductor material layer, an intrinsic semiconductor material layer, a second intrinsic compositionally-graded semiconductor layer, and an n-doped first semiconductor material layer. The first and second intrinsic compositionally-graded semiconductor material layers include an alloy of a first semiconductor material having a greater band gap width and a second semiconductor material having a smaller band gap with, and the concentration of the second semiconductor material increases toward the intrinsic semiconductor material layer in the first and second compositionally-graded semiconductor material layers. The photovoltaic device provides an open circuit voltage comparable to that of the first semiconductor material, and a short circuit current comparable to that of the second semiconductor material, thereby increasing the efficiency of the photovoltaic device.

Buffer layer deposition for thin-film solar cells

Improved methods and apparatus for forming thin-film buffer layers of chalcogenide on a substrate web. Solutions containing the reactants for the buffer layer or layers may be dispensed separately to the substrate web, rather than being mixed prior to their application. The web and/or the dispensed solutions may be heated by a plurality of heating elements.

Photovoltaic device front contact

A photovoltaic module may contain a front contact configured to transfer electrical current from the module.

Front side substrate of photovoltaic panel, photovoltaic panel and use of a substrate for a front side of a photovoltaic panel

A photovoltaic panel has an absorbent photovoltaic material, particularly based on cadmium, said panel including a front side substrate, particularly a transparent glass substrate with a transparent electrode coating, where the antireflection coating placed above the metal functional layer opposite the substrate has a single antireflection layer, based on mixed zinc tin oxide over its whole thickness, or where the antireflection coating placed above the metal functional layer opposite the substrate has at least two antireflection layers including, on the one hand, an antireflection layer which is closer to the functional layer and is based on mixed zinc tin oxide over its whole thickness and, on the other, an antireflection layer which is further from the functional layer and is not based on mixed zinc tin oxide over its whole thickness.

Process for coating glass onto a flexible stainless steel substrate

The present disclosure relates to a method of manufacturing of a glass coated metal product. This invention also relates to a coated metallic substrate material that is suitable for manufacturing flexible solar cells and other articles in which a passivated stainless steel surface is desirable.

Flexible Monocrystalline Thin Silicon Cell

A device, system, and method for solar cell construction and layer transfer are disclosed herein. An exemplary method of solar cell construction involves providing a silicon donor substrate. A porous layer is formed on the donor substrate. A first portion of a solar cell is constructed on the porous layer of the donor substrate. The solar cell and donor substrate are bonded to a flexible substrate. The flexible substrate and the first portion of a solar cell are then separated from the donor substrate at the porous layer. A second portion of a solar cell may then be constructed on the first portion of a solar cell providing a single completed solar cell.

Tandem thin-film silicon solar cell and method for manufacturing the same

A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.

Solution-processed inorganic photo-voltaic devices and methods of production

Methods of producing photo-voltaic devices include spray coating deposition of metal chalcogenides, contact lithographic methods and/or metal ion injection. Photo-voltaic devices include devices made by the methods, tandem photo-voltaic devices and bulk junction photovoltaic devices.

Alternating Bias Hot Carrier Solar Cells

Extremely high efficiency solar cells are described. Novel alternating bias schemes enhance the photovoltaic power extraction capability above the cell band-gap by enabling the extraction of hot carriers. In conventional solar cells, this alternating bias scheme has the potential of more than doubling their yielded net efficiency. In solar cells incorporating quantum wells (QWs) or quantum dots (QDs), the alternating bias scheme has the potential of extending such solar cell power extraction coverage, possibly across the entire solar spectrum, thus enabling unprecedented solar power extraction efficiency. Within such cells, a novel alternating bias scheme extends the cell energy conversion capability above the cell material band-gap while the quantum confinement structures are used to extend the cell energy conversion capability below the cell band-gap. Light confinement cavities are incorporated into the cell structure to allow the absorption of the cell internal photo emission, thus further enhancing the cell efficiency.

Backside nanoscale texturing to improve IR response of silicon solar cells and photodetectors

The absorption coefficient of silicon for infrared light is very low and most solar cells absorb very little of the infrared light energy in sunlight. Very thick cells of crystalline silicon can be used to increase the absorption of infrared light energy but the cost of thick crystalline cells is prohibitive. The present invention relates to the use of less expensive microcrystalline silicon solar cells and the use of backside texturing with diffusive scattering to give a very large increase in the absorption of infrared light. Backside texturing with diffusive scattering and with a smooth front surface of the solar cell results in multiple internal reflections, light trapping, and a large enhancement of the absorption of infrared solar energy.

REO-Ge Multi-Junction Solar Cell

The invention relates to a semiconductor based structure for a device for converting radiation to electrical energy comprising various combinations of rare-earths and Group IV, III-V, and II-VI semiconductors and alloys thereof enabling enhanced performance including high radiation conversion efficiency.

Novel semiconductor and optoelectronic devices

A method for fabricating a light-emitting integrated device, comprises overlying three layers, wherein each of the three layers emits light at a different wavelength, and wherein the overlying comprises one of: performing an atomic species implantation, performing a laser lift-off, performing an etch-back, or chemical-mechanical polishing (CMP).

Gas injection device and solar cell manufacturing method using the same

A solar cell manufacturing method includes forming a first electrode on a substrate, forming a mixed metal layer on the first electrode, forming a light absorbing layer by injecting hydrogen selenide on the entire surface of the mixed metal layer using a gas injection device, and forming a second electrode on the light absorbing layer. Further, the gas injection device includes a gas pipeline, an inner gas pipe positioned in the gas pipeline and having an opening, and a plurality of injection nozzles disposed below the gas pipeline.

Solar cell

A solar cell of the present invention comprises a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, wherein the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers comprising quantum dots are stacked alternately and repeatedly, and is formed so that the bandgaps of the quantum dots are gradually widened with increasing distance from a side of the p-type semiconductor layer and decreasing distance to a side of the n-type semiconductor layer.

Crystalline silicon based solar cell and method for manufacturing thereof

Provided is a hetero-junction solar cell with a silicon crystalline substrate of small thickness but exhibiting less warpage, and having a high photoelectric conversion efficiency. The crystalline silicon substrate has a thickness of 50 μm to 200 μm, and has a rough structure on the light-incident-side surface thereof. The surface of the transparent conductive layer in the light incidence side has an irregular structure. The top-bottom distance in the irregular structure of the transparent conductive layer in the light-incidence-side is preferably smaller than the top-bottom distance in the rough structure of the crystalline silicon substrate in the-light-incidence side. The distance between tops of the projections in the irregular structure on the surface of the transparent conductive layer in the light incidence side is preferably smaller than the distance between tops of the projections in the rough structure on the surface of the crystalline silicon substrate in the light incidence side.

Method for preparation of metal chalcogenide solar cells on complexly shaped surfaces

Methods for fabricating a photovoltaic device on complexly shaped fabricated objects, such as car bodies are disclosed. Preferably the photovoltaic device includes absorber layers comprising Copper, Indium, Gallium, Selenide (CIGS) or Copper, Zinc, Tin, Sulfide (CZTS). The method includes the following steps: a colloidal suspension of metal surface-charged nanoparticles is formed; electrophoretic deposition is used to deposit the nanopartieles in a metal thin film onto a complexly shaped surface of the substrate; the metal thin film is heated in the presence of a chalcogen source to convert the metal thin film into a metal chalcogenide thin film layer; a buffer layer is formed on the metal chalcogenide thin film layer using a chemical bath deposition; an intrinsic zinc oxide insulating layer is formed adjacent to a side of the buffer layer, opposite the metal chalcogenide thin film layer, by chemical vapor deposition; and finally, a transparent conducting oxide is formed adjacent to a side of the intrinsic zinc oxide, opposite the buffer layer, by chemical vapor deposition.

Manufacturing method of photoelectric conversion device

A photoelectric conversion device has a structure that includes a first amorphous silicon layer and a second amorphous silicon layer that are in contact with a single crystalline silicon substrate, and a first microcrystalline silicon layer with one conductivity type and a second microcrystalline silicon layer with a conductivity type that is opposite the one conductivity type that are in contact with the first and second amorphous silicon layers, respectively. The first and second microcrystalline silicon layers are formed using a plasma CVD apparatus that is suitable for high pressure film formation conditions.

Photovoltaic device

Provided is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate: a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises a hydrogenated amorphous silicon based material and a hydrogenated proto-crystalline silicon based material having a crystalline silicon grain, and comprises a non-silicon based element; and a second electrode disposed on the photoelectric transformation layer.

System and Method for Transferring Substrates in Large Scale Processing of CIGS and/or CIS Devices

The present invention provides methods for fabricating a copper indium diselenide semiconductor film. The method includes providing a plurality of substrates having a copper and indium composite structure, and including a peripheral region, the peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The method includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a vertical orientation with respect to a direction of gravity, the furnace including a holding apparatus. The method further includes introducing a gaseous species into the furnace and transferring thermal energy into the furnace to increase a temperature from a first temperature to a second temperature to at least initiate formation of a copper indium diselenide film on each of the substrates.

Stacked photovoltaic element and method of manufacturing stacked photovoltaic element

Disclosed is a stacked photovoltaic element, including: a first photovoltaic element portion including at least one photovoltaic element, stacked over a substrate; an intermediate layer made of a metal oxide, stacked over the first photovoltaic element portion; a buffer layer in an amorphous state, stacked over the intermediate layer; and a second photovoltaic element portion including at least one photovoltaic element, stacked over the buffer layer, wherein a conductive layer of the second photovoltaic element portion in contact with the buffer layer is a microcrystalline layer.

Thin-film solar cell and manufacturing method thereof

A thin-film solar cell and a manufacturing method thereof are disclosed. The method of manufacturing the thin-film solar cell includes the steps of providing a substrate; forming a diffusion barrier layer on the substrate; forming a back electrode layer on the diffusion barrier layer; forming a precursor layer on the back electrode layer, and the precursor layer including at least Cu, In and Ga; providing an alkali layer on an upper surface of the precursor layer, and the alkali layer being formed of Li, Na, K, Rb, Cs, or an alkali metal compound; providing a selenization process for the precursor layer and the alkali layer to form an absorber layer, such that an atomic percentage concentration of the alkali metal in the absorber layer is ranged between 0.01%˜10%; forming at least a buffer layer on the absorber layer; and forming at least a front electrode layer on the buffer layer.

Thin-film solar battery and method for manufacturing the same

A thin-film solar battery is constructed such that it includes a translucent insulating substrate, a first transparent conductive film formed of a crystalline transparent conductive film on the translucent insulating substrate, with an uneven structure on a surface thereof, a second transparent conductive film formed of a transparent conductive film on the first transparent conductive film, with an uneven structure on a surface thereof, where the uneven structure is more gentle than the uneven structure of the first transparent conductive film, a power generation layer formed on the second transparent conductive film and having at least one crystalline layer to generate power, and a backside electrode layer formed of a light-reflective conductive film on the power generation layer. A substantially convex hollow portion projecting from the translucent insulating substrate is provided between adjacent convex portions in the uneven structure of the first transparent conductive film.

Nanoparticle inks for solar cells

In a process for producing a solar cell, a sintering process performed on a nickel nanoparticle ink forms nickel silicide to create good adhesion and a low electrical ohmic contact to a silicon layer underneath, and allows for a subsequently electroplated metal layer to reduce electrode resistances. The printed nickel nanoparticles react with the silicon nitride of the antireflective layer to form conductive nickel silicide.

Methods for forming a transparent oxide layer for a photovoltaic device

A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber.

Thin film solar cell module and manufacturing method thereof

Discussed are a thin film solar cell module and a method of fabricating the same. A solar cell module includes a substrate; and a transparent electrode layer. The transparent electrode layer in turn includes a first electrode layer provided on the substrate; and a second electrode layer provided on the first electrode layer, wherein the first electrode layer and the second electrode layer are made of different materials and the second electrode layer is locally formed on portions of the first electrode layer. Accordingly, the transparent electrode layer exhibits improved transmittance of monochromatic light as well as increased light scattering, thereby enhancing efficiency of the thin film solar cell module.

Method and Apparatus for Forming a Thin Lamina

A method for producing a lamina from a donor body includes implanting the donor body with an ion dosage and separably contacting the donor body with a susceptor assembly, where the donor body and the susceptor assembly are in direct contact. A lamina is exfoliated from the donor body, and a deforming force is applied to the lamina or to the donor body to separate the lamina from the donor body.

Plasma vapor deposition system and method for making multi-junction silicon thin film solar cell modules and panels

A plasma vapor deposition system for making multi-junction silicon thin film solar cell modules and panels including a flexible substrate disposed about and removably supported by a dual-walled cylindrical substrate support for axially rotating the flexible substrate about its longitudinal axis, the dual-walled cylindrical substrate support comprising an inner wall spaced apart by an outer wall to define a coaxial cavity; a plasma vapor deposition torch located substantially adjacent to the flexible substrate for depositing at least one thin film material layer on an outer surface of the flexible substrate; and a traversing platform for supporting the rotatable substrate support relative to the plasma vapor deposition torch, the rotatable substrate support being traversed along its longitudinal axis by the traversing platform.

Methods of manufacturing solar cell

Provided is a method of manufacturing a solar cell. The method includes: preparing a substrate with a rear electrode; and forming a copper indium gallium selenide (CIGS) based light absorbing layer on the rear electrode at a substrate temperature of room temperature to about 350° C., wherein the forming of the CIGS based light absorbing layer includes projecting an electron beam on the CIGS based light absorbing layer.

Method of manufacturing photoelectric conversion device

A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

Photoelectric conversion element and solar cell

Provided is a photoelectric conversion element that has an nip structure formed of amorphous silicon and that is improved in energy conversion efficiency by a structure in which an n + -type a-Si layer is in contact with a transparent electrode formed by an n + -type ZnO layer. This makes it possible to realize photoelectric conversion elements and a solar cell module or facility with large area and high power with an influence on the global resources minimized.

METHOD FOR THE ACTIVATION OF CdTe THIN FILMS FOR THE APPLICATION IN CdTe/CdS TYPE THIN FILM SOLAR CELLS

A method for activation of CdTe films used in CdTe/CdS type thin film solar cells is described, in which a CdTe film is treated with a mixture formed by a fluorine-free chlorinated hydrocarbon and a gaseous chlorine-free fluorinated hydrocarbon. The fluorine-free chlorinated hydrocarbon and the gaseous chlorine-free fluorinated hydrocarbon are harmless to the ozone layer.

Nanostructure, Photovoltaic Device, and Method of Fabrication Thereof

An embodiment of nanostructure includes a conductive substrate; an insulating layer on the conductive substrate, metal nanoparticles, and elongated single crystal nanostructures. The insulating layer includes an array of pore channels. The metal nanoparticles are located at bottoms of the pore channels. The elongated single crystal nanostructures contact the metal nanoparticles and extend out of the pore channels. An embodiment of a photovoltaic device includes the nanostructure and a photoabsorption layer. An embodiment of a method of fabricating a nanostructure includes forming an insulating layer on a conductive substrate. The insulating layer has pore channels arranged in an array. Metal nanoparticles are formed in the pore channels. The metal nanoparticles conductively couple to the conductive layer. Elongated single crystal nanostructures are formed in the pore channels. A portion of the insulating layer is etched away, which leaves the elongated single crystal nanostructures extending out of the insulating layer.

In-situ hydrogen plasma treatment of amorphous silicon intrinsic layers

Embodiments of the invention generally provide methods for forming amorphous silicon-based photovoltaic devices, such as solar cells, by utilizing deposition and plasma treatment steps during a plasma-enhanced chemical vapor deposition (PE-CVD) process. In one embodiments, the method includes exposing a transparent conductive oxide (TCO) layer disposed on a substrate to hydrogen plasma during pretreatment, forming a p-type α-Si film on the TCO layer, forming an α-Si intrinsic film on the p-type α-Si film during a PE-CVD process, and forming an n-type α-Si film on the α-Si intrinsic film. In some examples, the PE-CVD process includes depositing an α-Si intrinsic layer during a deposition step, treating the α-Si intrinsic layer to form a treated α-Si intrinsic layer during a plasma treatment step, and sequentially repeating the deposition step and the plasma treatment step until obtaining a desired thickness of the α-Si intrinsic film containing a plurality of treated α-Si intrinsic layers.

Process and structures for fabrication of solar cells

Contact holes of solar cells are formed by laser ablation to accommodate various solar cell designs. Use of a laser to form the contact holes is facilitated by replacing films formed on the diffusion regions with a film that has substantially uniform thickness. Contact holes may be formed to deep diffusion regions to increase the laser ablation process margins. The laser configuration may be tailored to form contact holes through dielectric films of varying thicknesses.

Thermoelectric conversion material and its manufacturing method, and thermoelectric conversion device using the same

Disclosed is a new thermoelectric conversion material represented by the chemical formula 1: Bi 1-x Cu 1-y O 1-z Te, where 0≦x<1, 0≦y<1, 0≦z<1 and x+y+z>0. A thermoelectric conversion device using said thermoelectric conversion material has good energy conversion efficiency.

Inverted metamorphic multijunction solar cell with two metamorphic layers and homojunction top cell

A multijunction solar cell including an upper first solar subcell, and the base-emitter junction of the upper first solar subcell being a homojunction; a second solar subcell adjacent to said first solar subcell; a third solar subcell adjacent to said second solar subcell. A first graded interlayer is provided adjacent to said third solar subcell. A fourth solar subcell is provided adjacent to said first graded interlayer, said fourth subcell is lattice mismatched with respect to said third subcell. A second graded interlayer is provided adjacent to said fourth solar subcell; and a lower fifth solar subcell is provided adjacent to said second graded interlayer, said lower fifth subcell is lattice mismatched with respect to said fourth subcell.

Photovoltaic cell conductor consisting of two, high-temperature and low-temperature, screen-printed parts

Method for formation of at least one electrical conductor on a semiconductor material ( 1 ), characterized in that it comprises the following steps: (E1)—deposition by serigraphy of a first high-temperature paste; (E2)—deposition by serigraphy of a second low-temperature paste at least partially superposed onto the first high-temperature paste deposited during the preceding step.

Heterojunction Solar Cell Having Amorphous Silicon Layer

The present disclosure coats an amorphous silicon (Si) layer on a doped Si substrate of a solar cell. Or, a silicon dioxide (SiO 2 ) layer is grown on the doped Si substrate and beneath the amorphous Si layer. A heterojunction interface and a homojunction interface are formed in the solar cell in a one-time diffusion. Thus, a heterojunction solar cell can be easily fabricated and utilities compatible to those used in modern production can still be used for reducing cost.

High efficiency micromorph tandem cells

A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a μc-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

Continuous Electroplating Apparatus with Assembled Modular Sections for Fabrications of Thin Film Solar Cells

An electroplating production line or apparatus that can be assembled with modular plating sections in a roll-to-roll or reel-to-reel continuous plating process is provided. The length of the plating cell for a modular plating section can be readily changed to fit different current densities required in a roll-to-roll or reel-to-reel process. In addition, the electrolyte solution tanks can be simply connected or disconnected from the modular plating sections and moved around. With these designs, a multiple layers of coating with different metals, semiconductors or their alloys can be electrodeposited on this production line or apparatus with a flexibility to easily change the plating orders of different materials. This apparatus is particularly useful in manufacturing Group IB-IIIA-VIA and Group IIB-VIA thin film solar cells such as CIGS and CdTe solar cells on flexible conductive substrates through a continuous roll-to-roll or reel-to-reel process.

Photovoltaic module

The present invention provides a photovoltaic module with bypass diodes that has a high electricity generating capacity per unit area and high productivity. This photovoltaic module includes a photovoltaic cell assembly in which a plurality of photovoltaic cells are electrically connected in series, and a diode assembly in which a plurality of diodes are formed on a substrate in the arrangement that is consistent with the arrangement of the photovoltaic cells to which the diodes are to be attached. The diode assembly is disposed on a non-light receiving side of the photovoltaic cells, and the diodes are electrically connected to the photovoltaic cells. The photovoltaic cell assembly and the diode assembly are sealed and united by a sealant.

Chalcogenide Absorber Layers for Photovoltaic Applications and Methods of Manufacturing the Same

In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.

Method of Forming Epitaxial Film

A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Method and Device for Cadmium-Free Solar Cells

A method for fabricating a thin film photovoltaic device is provided. The method includes providing a substrate comprising a thin film photovoltaic absorber which has a surface including copper, indium, gallium, selenium, and sulfur. The method further includes subjecting the surface to a material containing at least a zinc species substantially free of any cadmium. The surface is heated to cause formation of a zinc doped material. The zinc doped material is free from cadmium. Furthermore the method includes forming a zinc oxide material overlying the zinc doped material and forming a transparent conductive material overlying the zinc oxide material.

Substrate processing apparatus, method for manufacturing solar battery, and method for manufacturing substrate

There is provide a substrate processing apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas into the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; and a heating section provided so as to surround the reaction tube, wherein a base of the reaction tube is made of a metal material.

Solar cell module

A solar cell module may include a plurality of solar cells, each solar cell including a substrate and an electrode part formed on the substrate, an interconnector electrically connecting adjacent solar cells, and a conductive adhesive film disposed between the electrode part and the interconnector, and electrically connecting the electrode part with the interconnector. The conductive adhesive film may include a resin and a plurality of conductive particles. The plurality of conductive particles may include a plurality of first particles each including a low melting point metal and a plurality of second particles each including a high melting point metal having a higher melting point than a melting point of the plurality of first particles.

Method of coating a substrate

The present invention provides a method of coating a substrate with a zinc oxide film, the method comprising the steps of: Providing a substrate with at least one substantially flat surface; Subjecting said surface at least partially to a plasma-etching process; Depositing a layer on said etched surface, the layer comprising zinc oxide. The method according to the invention is particularly suitable for manufacturing solar cells with an improved efficiency.

Solar cell and assembly of a plurality of solar cells

The invention relates to a solar cell ( 1 ), comprising a front side ( 10 ) and rear side ( 20 ). In use, the front side ( 10 ) is turned towards the light, on account of which charge carriers accumulate on the front side ( 10 ) and charge carriers of an opposite type accumulate on the rear side ( 20 ). The front side ( 10 ) is provided with a first pattern ( 13 ) of conductive elements ( 51, 52 ) which are connected to first contact points ( 15 ) on the rear side ( 20 ) by means of a number of vias ( 14 ) in the solar cell. The rear side ( 20 ) is provided with a second pattern of conductive elements ( 22 ) which are connected to second contact points ( 21 ) on the rear side ( 20 ). The first and second contact points ( 15, 21 ) are situated along a number of lines ( 30 ). The first contact points ( 15 ) are situated on a first side of the lines ( 30 ) and the second contact points ( 21 ) are situated on a second side of the lines ( 30 ).

Epitaxial lift off in inverted metamorphic multijunction solar cells

The present disclosure provides a process for manufacturing a solar cell by selectively freeing an epitaxial layer from a single crystal substrate upon which it was grown. In some embodiments the process includes, among other things, providing a first substrate; depositing a separation layer on said first substrate; depositing on said separation layer a sequence of layers of semiconductor material forming a solar cell; mounting and bonding a flexible support on top of the sequence of layers; etching said separation layer while applying an agitating action to the etchant solution so as to remove said flexible support with said epitaxial layer from said first substrate.

Photoelectric conversion device

A photoelectric conversion device includes a first photoelectric conversion unit on a substrate and having a first energy bandgap, a second photoelectric conversion unit having a second energy bandgap that is different from the first energy bandgap, the second photoelectric conversion unit being on the first photoelectric conversion unit, and an intermediate unit between the first and second photoelectric conversion units, the intermediate unit including a stack of a first intermediate layer and a second intermediate layer, each of the first intermediate layer and the second intermediate layer having a refractive index that is smaller than that of the first photoelectric conversion unit, the first intermediate layer having a first refractive index, and the second intermediate layer having a second refractive index that is smaller than the first refractive index.

Schottky barrier solar cells with high and low work function metal contacts

A Schottky Barrier solar cell having at least one of a low work function region and a high work function region provided on the front or back surface of a lightly-doped absorber material, which may be produced in a variety of different geometries. The method of producing the Schottky Barrier solar cells allows for short processing times and the use of low temperatures.

Grid design for iii-v compound semiconductor cell

A photovoltaic solar cell for producing energy from the sun including a germanium substrate including a first photoactive junction and forming a bottom solar subcell; a gallium arsenide middle cell disposed on said substrate; an indium gallium phosphide top cell disposed over the middle cell; and a surface grid including a plurality of spaced apart grid lines, wherein the grid lines have a thickness greater than 7 microns, and each grid line has a cross-section in the shape of a trapezoid with a cross-sectional area between 45 and 55 square microns.

Thin-film solar fabrication process, deposition method for tco layer, and solar cell precursor layer stack

Method of depositing a TCO layer on a substrate, of depositing precursors of a solar cell and precursors of a solar cell are described. The methods includes DC sputtering a ZnO-containing transparent conductive oxide layer over the substrate, the substrate having a size of 1.4 m 2 or above and texturing the ZnO-containing transparent conductive oxide layer, wherein the textured ZnO-containing transparent conductive oxide layer has a root means square roughness of 60 nm or below.

Method for manufacturing a back contact solar cell

A method for manufacturing a back contact solar cell according to the present invention comprises the following steps: preparing a p-type silicon substrate having a via hole; performing a diffusion process to form an emitter layer all over the surface of the substrate; forming an etching mask on the front surface and back surface of the substrate so as to selectively expose a portion of the substrate; etching a portion of the thickness of the substrate in the region exposed to the etching mask so as to remove an emitter layer in the relevant region; forming an anti-reflection film on the front surface of the substrate; and forming a grid electrode on the front surface of the substrate, and forming an n-electrode and a p-electrode on the back surface of the substrate.

Electroplating method for depositing continuous thin layers of indium or gallium rich materials

An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

Multi-Junction Semiconductor Photovoltaic Apparatus and Methods

A photovoltaic device and methods of manufacturing a photovoltaic device are disclosed. A photovoltaic device includes a first photovoltaic cell, a second photovoltaic cell, a semiconductor layer, and a doped layer. The second photovoltaic cell is in electrical communication with the first photovoltaic cell. The semiconductor layer includes a textured portion. The doped layer is configured to create a back surface field, the doped layer disposed between a proximal layer of the second photovoltaic cell and the semiconductor layer.

HYDRAZINE-COORDINATED Cu CHALCOGENIDE COMPLEX AND METHOD OF PRODUCING THE SAME

A hydrazine-coordinated Cu chalcogenide complex obtainable by reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration; and a method of producing a hydrazine-coordinated Cu chalcogenide complex, including reacting Cu or Cu 2 Se and a chalcogen in dimethylsulfoxide in the presence of hydrazine and free of an amine solvent, and adding a poor solvent to the resulting solution or subjecting the resulting solution to concentration and filtration.

Solar cell employing an enhanced free hole density p-doped material and methods for forming the same

A p-doped semiconductor layer of a photovoltaic device is formed employing an inert gas within a carrier gas. The presence of the inert gas within the carrier gas increases free hole density within the p-doped semiconductor layer. This decreases the Schottky barrier at an interface with a transparent conductive material layer, thereby significantly reducing the series resistance of the photovoltaic device. The reduction of the series resistance increases the open-circuit voltage, the fill factor, and the efficiency of the photovoltaic device. This effect is more prominent if the p-doped semiconductor layer is also doped with carbon, and has a band gap greater than 1.85V. The p-doped semiconductor material of the p-doped semiconductor layer can be hydrogenated if the carrier gas includes a mix of H 2 and the inert gas.

Thin-film silicon tandem solar cell and method for manufacturing the same

The photovoltaic cell comprises, deposited on a transparent substrate in the following order: a first conductive oxide layer; a first p-i-n junction; a second p-i-n junction; a second conductive oxide layer, wherein said first conductive oxide layer is substantially transparent and comprises a low-pressure chemical vapor deposited ZnO layer; and said second conductive oxide layer comprises an at least partially transparent low-pressure chemical vapor deposited ZnO layer; and wherein said first p-i-n junction comprises in the following order: a layer of p-doped a-Si:H deposited using PECVD and having at its end region facing toward said second p-i-n junction a higher band gap than at its end region facing toward said first conductive oxide layer; a buffer layer of a-Si:H deposited using PECVD without voluntary addition of a dopant; a layer of substantially intrinsic a-Si:H deposited using PECVD; a first layer of n-doped a-Si:H deposited using PECVD; and a layer of n-doped μc-Si:H deposited using PECVD; and wherein said second p-i-n junction comprises in the following order a layer of p-doped μc-Si:H deposited using PECVD; a layer of substantially intrinsic μc-Si:H deposited using PECVD; and a second layer of n-doped a-Si:H deposited using PECVD. The photovoltaic converter panel comprises at least one such photovoltaic cell.

Inverted metamorphic (imm) solar cell semiconductor structure and laser lift-off method for the same

An inverted metamorphic (IMM) solar cell semiconductor structure for use of a laser lift-off (LLO) process using external laser is introduced. The IMM solar cell semiconductor structure includes a substrate layer, a sacrifice layer, a plurality of bandgap layers, and a handle layer. The sacrifice layer, formed on the substrate layer, is made of a material containing a III-V compound. The bandgap layers, formed on the sacrifice layer, are for producing movements of electronic holes according to an absorbed extrinsic light wavelength. The handle layer is formed on the bandgap layers. Laser penetrates the substrate layer to fall on the sacrifice layer, such that the bandgap layers are lifted off by the sacrifice layer, thereby resulting in a high-efficiency IMM solar cell. A LLO laser lift-off method for the IMM solar cell semiconductor is further provided.

Ohmic contact between thin film solar cell and carbon-based transparent electrode

A photovoltaic device and method include a photovoltaic stack having an N-doped layer, a P-doped layer and an intrinsic layer. A transparent electrode is formed on the photovoltaic stack and includes a carbon based layer and a high work function metal layer. The high work function metal layer is disposed at an interface between the carbon based layer and the P-doped layer such that the high work function metal layer forms a reduced barrier contact and is light transmissive.

Apparatus for forming copper indium gallium chalcogenide layers

A multilayer structure to form absorber layers for solar cells. The multilayer structure includes a base comprising a contact layer on a substrate layer, a first layer on the contact layer, and a metallic layer on the first layer. The first layer includes an indium-gallium-selenide film and the gallium to indium molar ratio of the indium-gallium-selenide film is in the range of 0 to 0.8. The metallic layer includes gallium and indium without selenium. Additional selenium is deposited onto the metallic layer before annealing the structure for forming an absorber.

Method and device for manufacturing semiconductor devices, semiconductor device and transfer member

Disclosed is a method for manufacturing semiconductor devices. Said method includes: a supply step in which a process liquid ( 19 ) that oxidizes and dissolves a target substrate ( 20 ) to be treated is supplied to the surface of said substrate ( 20 ) to be treated; a positioning step in which a mesh-like transferring member ( 10 b ) provided with a catalyst material is positioned near or in contact with the surface of the substrate ( 20 ) to be treated; and a concave or convex forming step in which a concave or convex is formed on the surface of the substrate ( 20 ) to be treated via the aforementioned supply and positioning steps. As opposed to existing manufacturing methods, which manufacture semiconductor devices provided with semiconductor substrates with highly arbitrary (i.e. not very reproducible) concaves or convexes, by forming an appropriate concave or convex or mesh at the transferring member step, the disclosed method can stably manufacture semiconductor devices provided with semiconductor substrates that have concaves or convexes of a fixed level.

New compound semiconductors and their application

Disclosed are new compound semiconductors which may be used for solar cells or as thermoelectric materials, and their application. The compound semiconductor may be represented by a chemical formula: In x M y Co 4-m-a A m Sb 12-n-z-b X n Te z , where M is at least one selected from the group consisting of Ca, Sr, Ba, Ti, V, Cr, Mn, Cu, Zn, Ag, Cd, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu; A is at least one selected from the group consisting of Fe, Ni, Ru, Rh, Pd, Ir and Pt; X is at least one selected from the group consisting of Si, Ga, Ge and Sn; 0<x<1; 0<y<1; 0≦m≦1; 0≦n<9; 0<z≦2; 0≦a≦1; 0<b≦3; and 0<n+z+b<12.

Secondary Treatment of Films of Colloidal Quantum Dots for Optoelectronics and Devices Produced Thereby

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed.

Solar cell device comprising an amorphous diamond like carbon semiconductor and a conventional semiconductor

A device and method of manufacture of a:DLC multi-layer doping growth comprising the steps of: forming at least an a:DLC layer in one process over a conventional semiconductor layer, thereby creating a plurality of successively connected PIN/PN junctions, each PIN/PN junction being a photo diode, starting from a first junction and ending in a last junction, respective PIN/PN junctions having p-type, n-type, and intrinsic layers; varying the sp 3 /sp 2 ratio of at least the respective p-type and n-type layers and doping with at least silver to enhance electron mobility in respective PIN junctions; and connecting the plurality of a:DLC layers between electrodes at the first side and the second side to create a device having optimized spectral response to being oriented to a light source. A device comprises at least any kind of PIN/PN junction and an a:DLC PIN/PN junction, and can be connected as an array of devices.

Processes for photovoltaic absorbers with compositional gradients

Processes for making a photovoltaic absorber by depositing various layers of components on a substrate and converting the components into a thin film photovoltaic absorber material. Processes of this disclosure can be used to make a photovoltaic absorber having a concentration gradient of various atoms. CIGS thin film solar cells can be made.

Method for manufacturing light-absorption layer for solar cell, method for manufacturing thin film solar cell using the same, and thin film solar cell using the same

Disclosed are a method of manufacturing a light-absorption layer for a solar cell, a method manufacturing a thin film solar cell using the same, and a thin film solar cell fabricated using the same. The method of manufacturing a light-absorption layer for a solar cell includes: preparing an ink composition including at least one metal precursor including at least one chalcogen element and a solvent; applying the ink composition as a precursor phase on a substrate using a solution process; and photo-sintering the ink composition applied on the substrate as a precursor phase.

Photovoltaic uv detector

A photovoltaic UV detector configured to generate an electrical output under UV irradiation. The photovoltaic UV detector comprises a first layer comprising an electrically polarized dielectric thin layer configured to generate a first electrical output under the UV irradiation; and a second, layer configured to form an electrical energy barrier at an interface between the second layer and the first layer so as to generate a second electrical output under the UV irradiation, the second electrical output having a same polarity as the first electrical output, the electrical output of the photovoltaic UV detector being a sum of at least the first electrical output and the second electrical output. The electrically polarized dielectric thin layer may be a ferroelectric thin film, which may comprise PZT or PZLT. The second layer may be a metal and the electrical energy barrier may be a Schottky barrier.

Gallium arsenide solar cell with germanium/palladium contact

A method of forming a solar cell including: providing a semiconductor body including at least one photoactive junction; forming a semiconductor contact layer composed of GaAs deposited over the semiconductor body; and depositing a metal contact layer including a germanium layer and a palladium layer over the semiconductor contact layer so that the specific contact resistance is less than 5×10 −4 ohms-cm 2 .

Particle-Based Precursor Formation Method and Photovoltaic Device Thereof

Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of forming metal chalcogenide nanoparticles is provided. The method includes the following steps. Water, a source of Zn, a source of Cu, optionally a source of Sn and at least one of a source of S and a source of Se are contacted under conditions sufficient to produce a dispersion of the metal chalcogenide nanoparticles having a Zn chalcogenide distributed within a surface layer thereof. The metal chalcogenide nanoparticles are separated from the dispersion and can subsequently be used to form an ink for deposition of kesterite films.

Discharge electrode array for thin-film solar cell deposition

A discharge electrode array for a silicon-based thin film solar cell deposition chamber is provided, relating to solar cell technologies. The discharge electrode array includes a signal feed component having a rectangular-shaped end, a flat waist corresponding to a feed-in port located in a hallowed rectangular area on a center region of a cathode plate having a shielding cover, connecting a feed-in power supply signal by surface contact. The electrode array includes at least a set of cathode plates and an anode plate, with two cathode plates sharing or surrounding one anode plate. Uniform large area and stable discharge driven by the RF/VHF power supply signal can be achieved, and the standing wave and the skin effect can be effectively removed. The production efficiency can be improved and the cost can be reduced.

Laser annealing for thin film solar cells

A method for forming copper indium gallium (sulfide) selenide (CIGS) solar cells, cadmium telluride (CdTe) solar cells, and copper zinc tin (sulfide) selenide (CZTS) solar cells using laser annealing techniques to anneal the absorber and/or the buffer layers. Laser annealing may result in better crystallinity, lower surface roughness, larger grain size, better compositional homogeneity, a decrease in recombination centers, and increased densification. Additionally, laser annealing may result in the formation of non-equilibrium phases with beneficial results.

Rapid Thermal Activation of Flexible Photovoltaic Cells and Modules

A photovoltaic cell includes a polymer window and at least one active semiconductor layer that is conditioned using a cadmium chloride treatment process. The photovoltaic cell is heated, during the cadmium chloride treatment process by a rapid thermal activation process to maintain polymer transparency. A method of producing a photovoltaic cell using the rapid thermal activation process and an apparatus to conduct rapid thermal activation processing are also disclosed. 141.-. (canceled)42. A method of forming a photovoltaic cell comprising the steps of:providing a semiconductor layer on a polymer substrate layer; andexposing the semiconductor layer to a chloride activation process having a chlorine exposure cycle and a rapid thermal activation cycle, the rapid thermal activation cycle having a rate of temperature change causing a strain in the polymer substrate that is greater than a fracture strain limit of glass.43. The method of claim 42 , in which the chlorine exposure cycle includes CdClvapors.44. The method of claim 43 , in which the CdClvapors are provided in a carrier gas comprising one of dry air or a mixture of Oand an inert gas.45. The method of claim 43 , in which the CdClvapors are provided by a solution of CdCland a solvent.46. The method of claim 42 , in which the chlorine exposure cycle includes trichloromethane.47. The method of claim 42 , in which a transparent conductive oxide (TCO) layer is applied to the polymer substrate layer such that the TCO layer forms an electrical contact that is configured to allow light to pass therethrough to the active layers.48. The method of claim 47 , in which a highly resistive transparent (HRT) layer is applied to the TCO layer claim 47 , the HRT layer configured to form a TCO/HRT bilayer providing at least one of an electrical isolation function and a chemical diffusion barrier function.49. The method of claim 48 , wherein an active layer is sputter deposited onto the TCO/HRT bilayer.50. The method of claim 49 , ...

PROCESS AND APPARATUS FOR PRODUCING A GLASS SHEET COATED WITH A SEMICONDUCTOR MATERIAL

The invention relates to a process for producing a glass sheet coated with a semiconductor material, which comprises the steps (a) production of a glass strip in a float bath containing liquid tin; (b) discharge of the glass strip from the float bath and optionally coating of the glass strip with a transparent, electrically conductive intermediate layer; (c) transfer of the uncoated or coated glass strip into a deposition chamber for the physical deposition of the semiconductor material from the gas phase; and (d) coating of the coated or uncoated glass strip from step (c) with the semiconductor material by physical deposition of the semiconductor material from the gas phase at a gas pressure of at least 0.1 bar. The invention additionally relates to an apparatus for producing a glass strip coated with a semiconductor material, a process for producing a solar cell or a solar module and also a solar cell or a solar module which can be obtained by this process. 11021. A process for producing a glass sheet ( , ) coated with a semiconductor material , comprising the steps{'b': '3', '(a) production of a continuous glass strip in a float bath () containing liquid tin;'}{'b': '3', '(b) discharge of the glass strip from the float bath () and optionally coating of the glass strip with a transparent, electrically conducting intermediate layer;'}{'b': '5', '(c) transfer of the uncoated or coated glass strip to a deposition chamber () for the physical deposition of the semiconductor material from the gas phase;'}(d) coating of the coated or uncoated glass strip from step (c) with the semiconductor material by physical deposition of the semiconductor material from the gas phase at a gas pressure of at least 0.1 bar and{'b': 10', '21, '(d1) cutting of the glass strip coated with semiconductor material for the production of the glass sheet (, ).'}2. The process as claimed in claim 1 , characterized in that the glass strip in step (a) is produced at a temperature in the range from ...

Intermediate layer for stacked type photoelectric conversion device, stacked type photoelectric conversion device and method for manufacturing stacked type photoelectric conversion device

An intermediate layer for a stacked type photoelectric conversion device including an n-type silicon-based stacked body including an n-type crystalline silicon-based semiconductor layer and an n-type silicon-based composite layer, and a p-type silicon-based stacked body including a p-type crystalline silicon-based semiconductor layer and a p-type silicon-based composite layer, the n-type crystalline silicon-based semiconductor layer of the n-type silicon-based stacked body being in contact with the p-type crystalline silicon-based semiconductor layer of the p-type silicon-based stacked body, a stacked type photoelectric conversion device including the same, and a method for manufacturing a stacked type photoelectric conversion device.

Thin-film solar cell manufacturing system

A manufacturing system for thin-film solar cell is disclosed in the present invention. The manufacturing system includes a chamber, a boat disposed inside the chamber, a solid substrate with a first precursor which has a first I B group and III A group, and a flexible substrate with a second precursor which has a second I B group and III A group, a gas controller for pouring reactant gas, and a heater for increasing the temperature of the chamber, so that the reactant gas reacts to the first precursor and the second precursor to form a chalcopyrite structure.

Method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer

A method of fabricating a flexible photovoltaic film cell with an iron diffusion barrier layer. The method includes: providing a foil substrate including iron; forming an iron diffusion barrier layer on the foil substrate, where the iron diffusion barrier layer prevents the iron from diffusing; forming an electrode layer on the iron diffusion barrier layer; and forming at least one light absorber layer on the electrode layer. A flexible photovoltaic film cell is also provided, which cell includes: a foil substrate including iron; an iron diffusion barrier layer formed on the foil substrate to prevent the iron from diffusing; an electrode layer formed on the iron diffusion barrier layer; and at least one light absorber layer formed on the electrode layer.

Thin film solar cell

Disclosed is a thin-film solar cell which has a high photoelectric conversion efficiency and is provided with a substrate ( 1 ), a backside surface electrode layer ( 2 ) formed on the substrate ( 1 ), a p-type light-absorbing layer ( 3 ) formed on the backside surface electrode layer ( 2 ), and an n-type transparent conductive film ( 5 ) formed on the p-type light-absorbing layer ( 3 ). Voids ( 6 ) are formed at the interface of the backside surface electrode layer ( 2 ) and the p-type light-absorbing layer ( 3 ).

Photocell

An improved photocell offering efficient power generation from broadband incident radiation, the photocell includes a first diode formed in single crystal silicon and one or more further diodes each formed in a single crystal Group II-VI semiconductor. In a preferred embodiment, a tandem photocell is provided that incorporates a first diode formed in single crystal silicon, a second diode formed in a Group II-VI semiconductor, an optional buffer layer and a highly doped layer of silicon acting as an optional tunnel junction between the two diodes. The device can additionally include a layer of silicon deposited at the rear of the structure to maximise current collection of longer wavelength light, and top and bottom (front and back) electrical contacts. In use, light impinges on the top (front) surface of the photocell and is absorbed (in turn) by diodes.

POLYCRYSTALLINE CDTE THIN FILM SEMICONDUCTOR PHOTOVOLTAIC CELL STRUCTURES FOR USE IN SOLAR ELECTRICITY GENERATION

A reverse p-n junction solar cell device and methods for forming the reverse p-n junction solar cell device are described. A variety of n-p junction and reverse p-n junction solar cell devices and related methods of manufacturing are provided. N-intrinsic-p junction and reverse p-intrinsic-n junction solar cell devices are also described. 1. A photovoltaic device , comprising:(a) a non-crystalline substrate or superstrate; (i) tellurium (Te) and cadmium (Cd) or zinc (Zn), or', '(ii) Te, Cd and Zn;, '(b) a first layer adjacent to said superstrate or substrate, the first layer comprising'}(c) a second layer adjacent to the first layer, the second layer comprising Cd and Te; and (i) the first layer is chemically doped n-type, the second layer is chemically doped p-type, and the third layer is chemically doped p-type; or', '(ii) the first layer is chemically doped p-type, the second layer is chemically doped p-type, and the third layer is chemically doped n-type., '(d) a third layer adjacent to the second layer, the third layer comprising Cd and Te, wherein2. The photovoltaic device of claim 1 , further comprising a layer comprising Zn and Te between said substrate or superstrate and said first layer.3. The photovoltaic device of claim 1 , further comprising a fourth layer adjacent to the third layer claim 1 , the fourth layer comprising Cd and Te.4. The photovoltaic device of claim 1 , wherein one or more of said first layer claim 1 , second layer and third layer comprise Te claim 1 , Cd and Zn.5. The photovoltaic device of claim 1 , wherein(a) said first layer and second layer comprise Te, Cd and Zn;(b) said first layer and third layer comprise Te, Cd and Zn;(c) said second layer and third layer comprise Te, Cd and Zn; or(d) said first layer, second layer and third layer comprise Te, Cd and Zn.6. The photovoltaic device of claim 5 , wherein said first layer claim 5 , second layer and third layer comprise Te claim 5 , Cd and Zn.7. The photovoltaic device of claim 1 , ...

Photoelectric conversion element and method of producing the same

The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.

PHOTOELECTRIC CONVERSION DEVICE

A photoelectric conversion device including a substrate and a pin type photoelectric conversion layer disposed on the surface of the substrate is provided. The pin type photoelectric conversion layer includes a first pin type photoelectric conversion layer formed by stacking a p type semiconductor layer, an i type semiconductor layer serving as an amorphous semiconductor layer and an n type semiconductor layer. The first pin type photoelectric conversion layer includes the first portion located on a part of the surface of the substrate and the second portion located on another part of the surface of the substrate. The first portion is higher in concentration of at least one impurity element selected from oxygen, nitrogen and carbon than the second portion. The first portion is less in thickness than the second portion. 1. A photoelectric conversion device comprising:a substrate; anda pin type photoelectric conversion layer disposed on a surface of said substrate,said pin type photoelectric conversion layer including a first pin type photoelectric conversion layer formed by stacking a p type semiconductor layer, an i type semiconductor layer serving as an amorphous semiconductor layer and an n type semiconductor layer,said first pin type photoelectric conversion layer including a first portion located on a part of the surface of said substrate and a second portion located on another part of the surface of said substrate,said first portion being higher in concentration of at least one impurity element selected from oxygen, nitrogen and carbon than said second portion, andsaid first portion being less in thickness than said second portion.2. The photoelectric conversion device according to claim 1 , whereinsaid first portion is located on a peripheral edge region on the surface of said substrate andsaid second portion is located on a center region on the surface of said substrate corresponding to a region inside with respect to said peripheral edge region.3. The ...

METHOD FOR PRODUCING A PHOTOVOLTAIC MODULE HAVING BACKSIDE-CONTACTED SEMICONDUCTOR CELLS

A method for producing a photovoltaic module having backside-contacted semiconductor cells which have contact regions provided on a contact side, the method including providing a non-conducting foil-type substrate, placing the contact sides of the semiconductor cells on the substrate, implementing laser drilling which penetrates the substrate to produce openings in the contact regions of the contact sides of the semiconductor cells, depositing a contacting means on the substrate to fill the openings and to form a contacting layer extending on the substrate. 115-. (canceled)16. A method for producing a photovoltaic module having backside-contacted semiconductor cells which include contact regions provided on a contact side , the method comprising:providing a non-conducting foil-type substrate;placing contact sides of the semiconductor cells on the substrate;performing a point-by-point perforation which penetrates the substrate to produce openings in contact regions of the contact sides of the semiconductor cells; anddepositing a contacting material on the substrate to fill the openings and to form a contacting layer extending on the substrate.17. The method as recited in claim 16 , wherein after the contact sides of the semiconductor cells have been placed on the substrate claim 16 , the semiconductor cells are laminated onto the substrate to cover the semiconductor cells by a laminate made of one of a ethylene vinyl acetate or plastic on the basis of organosilicon compounds.18. The method as recited in claim 16 , wherein at least one additional contacting layer is produced after the contacting material has been applied claim 16 , the at least one additional contacting layer being produced by:at least sectionally covering the contacting layer by an insulating cover layer;performing a point-by-point perforation which punctures at least one of the cover layer, the substrate, and circuit tracks in order to produce openings in the contact regions of the semiconductor ...

Photovoltaic devices and methods of forming the same

This disclosure provides photovoltaic apparatus and methods of forming the same. In one implementation, a photovoltaic device includes an anode contact structure, a cathode contact structure, and an inorganic solar cell disposed between the anode and cathode contact structures. The inorganic solar cell includes a p-type photovoltaic layer, an n-type photovoltaic layer, and one or more minority carrier blocking layers for improving the efficiency of the solar cell by preventing minority carriers within the solar cell from reaching interface recombination surfaces associated with the anode and cathode contact structures.

SILICON MULTILAYER ANTI-REFLECTIVE FILM WITH GRADUALLY VARYING REFRACTIVE INDEX AND MANUFACTURING METHOD THEREFOR, AND SOLAR CELL HAVING SAME AND MANUFACTURING METHOD THEREFOR

The present invention relates to a silicon multilayer anti-reflective film with a gradually varying refractive index and a manufacturing method therefor, and a solar cell having the same and a manufacturing method therefor, wherein: the refractive index of a silicon thin film is adjusted by depositing silicon on a semiconductor or glass substrate with a slight tilt; and an anti-reflective film with a gradually varying refractive index is implemented using a silicon multi-layer film in which multi-layer film are stacked with different tilt angles. In addition, the silicon multilayer anti-reflective film according to the present invention is applied to a silicon solar cell, thereby suppressing reflection in the inside of the solar cell and providing an excellent heat radiation characteristic using a high heat transfer coefficient. 1. A silicon multilayer anti-reflection film comprising at least two silicon layers sequentially stacked on a substrate , wherein each silicon layer is obliquely deposited on the substrate by adjusting a tilting angle of the substrate to gradually vary an index of refraction.2. The silicon multilayer anti-reflection film according to claim 1 , wherein the substrate comprises a glass substrate or a semiconductor substrate claim 1 , and the semiconductor substrate comprises one of Si claim 1 , GaAs claim 1 , InP claim 1 , GaP claim 1 , and GaN.3. The silicon multilayer anti-reflection film according to claim 1 , wherein the silicon layer has a gradually increasing or decreasing index of refraction.4. The silicon multilayer anti-reflection film according to claim 1 , wherein the tilting angle ranges from 1 to 90 degrees.5. The silicon multilayer anti-reflection film according to claim 1 , wherein the gradually varying index of refraction is realized through a stepped configuration claim 1 , and the distribution of the gradually varying index of refraction comprises one of linear claim 1 , polynomial claim 1 , Gaussian and nonlinear ...

SUBSTRATE COMPRISING A TRANSPARENT CONDUCTIVE OXIDE FILM AND ITS MANUFACTURING PROCESS

The invention relates to a substrate comprising at least one scattering film made of a transparent conductive oxide (TCO) and to a process for manufacturing such a substrate. It also relates to a solar cell comprising such a substrate. The substrate according to the invention comprises a layer of spherical particles made of a material chosen from dielectric and transparent conductive oxides, the layer being coated with a TCO film and the diameters of said spherical particles belonging to at least two populations of different diameters. The invention is applicable in particular to solar cells. 1. A substrate comprising:a first TCO scattering layer of a transparent conductive oxide deposited on a surface of a support,a layer of spherical particles of a material selected from the group consisting of a dielectric material and a transparent conductive oxide,whereinthe spherical particles have at least two populations of different diameters,the layer of spherical particles is positioned under the first TCO scattering layer, andthe first TCO scattering layer has a substantially constant thickness.2. The substrate as of claim 1 , further comprising claim 1 , between the support and the layer of spherical particles claim 1 , a second TCO layer of a transparent conductive oxide that is identical to claim 1 , or different from claim 1 , the transparent conductive oxide forming the first TCO scattering layer.3. The substrate of claim 2 , wherein the first and second TCO layers coat the layer of spherical particles.4. The substrate as of claim 1 , wherein the support is made of a material selected from the group consisting of a glass claim 1 , a p-doped silicon claim 1 , a n-doped silicon claim 1 , a hydrogenated amorphous silicon (a-Si:H) claim 1 , a Cu(In claim 1 , Ga)Se claim 1 , a single-crystal silicon or polysilicon claim 1 , a CdS claim 1 , and a layer of an organic cell.5. The substrate of claim 1 , wherein the spherical particles have a diameter of between 300 nm and 10 ...

Solar cells

Solar cells are provided. The solar cell may include a substrate, a first electrode, a light absorption layer, a second electrode. Additionally, an intrinsic layer and a buffer layer may further be disposed between the light absorption layer and the second electrode. Here, the first and second electrodes may consist of carbon nanotubes of which polarities may be controlled. Thus, a flexible solar cell of low costs and high efficiency may be realized.

ULTRAVIOLET SENSOR AND METHOD FOR MANUFACTURING THE SAME

An ultraviolet sensor has a p-type semiconductor layer composed of a solid solution of NiO and ZnO, and an n-type semiconductor layer composed of ZnO and joined to the p-type semiconductor layer such that a part of the surface of the p-type semiconductor layer is exposed. In the p-type semiconductor layer, trivalent Ni is contained in a crystal grain in a state of being solid-solved with the solid solution of NiO and ZnO. The trivalent Ni can be contained in the crystal grain of the p-type semiconductor layer by adding NiOOH to NiO and ZnO, and firing the resulting mixture. Thereby, an inexpensive ultraviolet sensor capable of being downsized, which can easily detect the intensity of ultraviolet light by a photovoltaic power without utilizing a peripheral circuit can be realized. 1. An ultraviolet sensor comprising:a p-type semiconductor layer composed of a solid solution of NiO and ZnO; andan n-type semiconductor layer composed of ZnO and joined to the p-type semiconductor layer,wherein the p-type semiconductor layer contains trivalent Ni.2. The ultraviolet sensor according to claim 1 , further comprising an internal electrode is embedded in the p-type semiconductor layer.3. The ultraviolet sensor according to claim 2 , wherein the internal electrode is a composite oxide composed of a rare earth element and Ni.4. The ultraviolet sensor according to claim 3 , wherein the rare earth element is La.5. The ultraviolet sensor according to claim 1 , further comprising:a first terminal electrode on a first end of the p-type semiconductor layer, the first terminal electrode being electrically connected to the internal electrode; anda second terminal electrode on a second end of the p-type semiconductor layer.6. The ultraviolet sensor according to claim 1 , wherein the n-type semiconductor layer is joined to the p-type semiconductor layer such that a part of the p-type semiconductor layer is exposed.7. The ultraviolet sensor according to claim 1 , wherein the trivalent Ni is ...

Methods of Fabricating Optoelectronic Devices Using Semiconductor-Particle Monolayers and Devices Made Thereby

Methods of fabricating optoelectronic devices, such as photovoltaic cells and light-emitting devices. In one embodiment, such a method includes providing a substrate, applying a monolayer of semiconductor particles to the substrate, and encasing the monolayer with one or more coatings so as to form an encased-particle layer. At some point during the method, the substrate is removed so as to expose the reverse side of the encased-particle layer and further processing is performed on the reverse side. When a device made using such a method has been completed and installed into an electrical circuit the semiconductor particles actively participate in the photoelectric effect or generation of light, depending on the type of device.

System and method for measuring layer thickness and depositing semiconductor layers

Described herein is a method and apparatus for measuring the thickness of a deposited semiconductor material. A colorimeter has an optical source that illuminates a portion of a deposited semiconductor material with optical radiation, a sensor that collects and measures color information related to reflected radiation from the deposited semiconductor material, and a processor that receives the color information related to the reflected radiation from the sensor and calculates a thickness of the semiconductor material. The processor may control a semiconductor material deposition apparatus.

SILICON WAFER, SEMICONDUCTOR DEVICE, METHOD FOR PRODUCING SILICON WAFER, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

A silicon wafer obtained by etching by not less than 5 μm and not more than 25 μm per surface on either side a surface of crystalline silicon obtained by cutting a silicon crystal ingot, the silicon wafer having a surface with a facet having a width of not less than 10 μm and not more than 150 μm, and a semiconductor device having an electrode at that surface, are provided. Furthermore, a method for producing the silicon wafer and a method for producing the semiconductor device that include the step of etching a surface of the crystalline silicon with an aqueous solution of sodium hydroxide having a sodium hydroxide concentration of not less than 20% by mass and not more than 35% by mass by not less than 5 μm and not more than 25 μm per surface on either side, are also provided. 1. A back electrode type solar cell comprising:a silicon wafer obtained by etching by not less than 5 μm and not more than 25 μm per surface on either side a surface of n type monocrystalline silicon obtained by cutting an n type monocrystalline silicon ingot, said silicon wafer having a surface with a facet having a width of not less than 10 μm and not more than 150 μm.an n type dopant diffusion region and a p type dopant diffusion region provided in said silicon wafer at said surface having said facet;an electrode for n type provided on said n type dopant diffusion region; andan electrode for p type provided on said p type dopant diffusion region.2. The back electrode type solar cell according to claim 1 , wherein said facet has a depth of not less than 0.1 μm and not more than 10 μm.3. (canceled)4. A method for producing a back electrode type solar cell claim 1 , comprising the steps of:forming n type monocrystalline silicon by cutting an n type monocrystalline silicon ingot;etching a surface of said n type monocrystalline silicon with an aqueous solution of sodium hydroxide having a sodium hydroxide concentration of not less than 20% by mass and not more than 35% by mass to form a ...

PRODUCTION METHOD OF SOLAR CELL MODULE

The present invention provides a production method of a solar cell module, comprising: a first process of mounting a module layered body, which comprises at least a glass member, an encapsulant, a solar cell element and a translucent member in this order, and in which an outer periphery of the encapsulant is positioned at an inner side of outer peripheries of the glass member and the translucent member, on a mounting platen of a double vacuum chamber system laminator comprising a first chamber and a second chamber that are partitioned by a flexible member, and the mounting platen, which is provided in the second chamber facing the flexible member and comprises a heating means, the module layered body being mounted on the mounting platen so that the glass member is at the flexible member side; a second process of depressurizing the inside of the first chamber and the inside of the second chamber; and a third process of heat-pressure bonding and integrating the module layered body by raising a pressure in the first chamber to from 0.005 MPa to 0.090 MPa (gauge pressure of from −0.096 MPa to −0.011 MPa) and pressing the module layered body to the heated mounting platen by the flexible member which has undergone flexural deformation. 1. A production method of a solar cell module , comprising:a first process of mounting a module layered body, which comprises at least a glass member, an encapsulant, a solar cell element and a translucent member in this order, and in which an outer periphery of the encapsulant is positioned at an inner side of outer peripheries of the glass member and the translucent member, on a mounting platen of a double vacuum chamber system laminator comprising a flexible member, a first chamber and a second chamber that are partitioned by the flexible member, and the mounting platen, which is provided in the second chamber facing the flexible member and comprises a heating means, the module layered body being mounted on the mounting platen so that ...

PREPARATION OF SEMICONDUCTOR FILMS

The invention relates to a preparation process for thin semiconducting inorganic films comprising various metals (Cu/In/Zn/Ga/Sn), selenium and/or sulfur. The process uses molecular precursors comprising metal complexes with oximato ligands. Copper-based chalcopyrites of the I-III-IV-type are prepared with high purity at low temperatures under ambient conditions. The thin films can be used in photovoltaic panels (solar cells). 1. Process for the production of a semiconductor , characterized in that 'at least one metal complex comprises one or more ligands from the class of the oximates, and', 'a. precursors comprising one or more metal complexes and a chalcogen source are combined,'}b. the combined precursors are decomposed by heating and/or radiation with formation of the semiconductor.2. Process according to claim 1 , characterized in that the semiconductor is of the I-III-VI-type claim 1 , of the I-VI-type claim 1 , of the II-VI-type claim 1 , of the III-VI-type claim 1 , of the IV-VI-type claim 1 , or of the I-II-IV-VItype.3. Process according to claim 1 , characterized in that the semiconductor is formed as a film or layer on a substrate.4. Process according to claim 1 , characterized in that the combination of the precursors is effected in solution.5. Process according to claim 1 , characterized in that the combined precursors are decomposed in an inert environment.6. Process according to claim 1 , characterized in that the chalcogen is selenium (Se) or sulfur (S).7. Process according to claim 1 , characterized in that the chalcogen source comprises an organic selenium or sulfur compound or elemental selenium or sulfur.8. Process according to claim 1 , characterized in that the chalcogen source is selected from one or more of selenourea or derivatives claim 1 , thiourea or derivatives claim 1 , thioacetamide claim 1 , or selenium/sulfur dissolved in amines or phosphines.9. Process according to claim 1 , characterized in that the temperature for the ...