ORGANIC SEMICONDUCTORS AS WINDOW LAYERS FOR INORGANIC SOLAR CELLS
Cross-references to related application A user 14 September 2010 a American provisional application number 61/382,885 and claimed benefit call application, disclosure thereof may be included in literature referenced to herein such that it has a distribution content. Statement on consultations supporting Federal Object herein assisted by energy SC0001011-DE contract in the American Government was created by aided. Government according to the object of the present application has has a right. Study of imbalance between contract Study industry and education cavity object for herein protocol to by at least one second party and with respect to, and/or based on instead party a to party been made the torsion bar cooperates with at least one: lake Michigan University and global photonic energy [...] (Global Photonic Energy Corporation). protocol the claimed invention has been made which fermented prior to and day, protocol in a range of from is made as a result of the activity launched. Optoelectronic device electromagnetic radiation electronically create or detect or, to generate electricity from electromagnetic radiation around of the material to optical characteristics and electronic characteristics. to. Photosensitive optoelectronic of electromagnetic radiation converts into electricity. Photovoltaic (PV) device also referred to as a solar cell power a photosensitive used specially used to generate a is one type of optoelectronic devices. Electric energy from light source other than sunlight that are capable of producing, for example, device PV-side illuminated, to provide heating, or calculator, radio, computer or remote monitoring or communication device a device, such as for supplying power to or electronic circuit the, power consumption of the first end of the load can be used. Such power generating use direct lighting from a light source or other solar often in addition of the wafer is not is used passes through the two sustains the anti-staining effect, or can be the electrical power output of the PV device of and certain of the first and second sub requirements or other to the battery to charge the battery includes charging of the energy storage device. Used herein the term "resistive load" any power consumption or storage circuit, device, . refers to device or system. Other types of photosensitive optoelectronic device is cell the photoconductor. In this function, signal detection circuit by monitoring resistance of the device is detected change absorption light. Other types of photosensitive optoelectronic device is an optical detector. In operation, the light detector is sensor is exposed to electromagnetic radiation detector measures a current generated as the means of a current detection circuit for use in conjunction with the, the bias applied voltage can take the. As described herein the light detector detection circuit may present the user with bias voltage, electronic of the photo-detector to electromagnetic radiation. reaction. Such 3 types of photosensitive optoelectronic device which is marked as a chemical as defined-rectifying junctions with depending there is (rectifying junction), publicly known turn or vias bias device is in addition a externally applied voltage in depending can be characterized. Photoconductor has no-rectifying junctions with cell, generally is operated by bias. PV has rectifying junction with the device has one or more, even operated in any bias. The light detector has one or more rectifying junction with the, generally bias but actuated by ., which is not always the case. Generally, photovoltaic cell a circuit, device or device to power the device while the, detection circuit for controlling or do not supply a signal or more precisely a current, a user from detection circuit does not produce the. Vice versa, optical detector or a photoconductor a detection circuit for controlling a transform that operates on or provides signal or more precisely a current, but to provide the output of information from detection circuit, circuit, device or does not produce the device to power the device. A traditional, , photosensitive optoelectronic device plurality of inorganic semiconductor, for example crystalline, polycrystalline and non crystalline silicon, gallium arsenide, cadmium of tellurium consists of or the like. Herein the term "semiconductor" in the heat charge carriers exciting or electromagnetic excitation driven by electrically capable of eliciting anti-material. refers to. That term "photoconductive" generally electromagnetic radiation energy of the ultraviolet radiation is absorbed, the excitation energy of charge carriers a mass of the carrier is converted into a to conduct charge in, i.e. capable of carrying. the process make the. "Photoconductor" and "photoconducting substances" herein term that charge carriers and is of such electromagnetic radiation in selected for generating properties which means that semiconductive material therein which is is used. PV device incident solar power into useful electrical power by which it is possible to convert may been characterized to efficiency. Crystalline or crystalline silicon a device meant to use commercial use and host producing bacteriocinecopyright the outputted, a portion achieves greater than 23%. However, in particular with large surface area, effective crystalline-based device detected a considerable current, so greater crystallinity without deficiency in used to generate a unique by the must cost are moved to the outside by the. On the other hand, still and efficient non crystalline silicon device to the problems associated with the stability has difficulty is experienced. Current commercial amorphous silicon cell where the lighting device has an efficacy of stabilizing 4 to 8%. The photocurrent device PV × optical voltage maximum product to each cell lighting conditions (i.e., AMI.5 standard testing condition by 1,000 W/m2 in the lighting spectrum) in the maximum electrical power on the formation of a can be optimized. Standard of lighting conditions such a cell power conversion efficiency a parameters of the following 3 (1) zero bias under current, i.e. cancer pair-wise of short circuit current (ISC), (2) open circuit under conditions of optical voltage, i.e. open circuit voltage in volts (VOC) and (3) charging rate than θ1. (fill factor, ff). A device PV these devices being in a load connected across it to the light when illuminated by light generating current generates. When illuminated in the load endless, and transverse, its device PV maximum a detectable voltage, V open circuit or VOC generates a. Electrically short when illuminated by the contact, PV device its the maximum current, a short circuit or an I ISC generates a. Power used to generate a when used actually, a finite device PV is connected to resistive load, power output is product of current and voltage, I×V. given by. PV device the overall power maximum generated by uniquely product, ISC × VOC can't exceeds a. The maximum load value when optimized for power extractor, current and voltage value, Imax and Vmax have. PV device thus defined is the following numerical of merit (ff) is a generator and the charged state of: Wherein, ISC and VOC is an actual in use since the obtained never simultaneously, ff all the time is less than 1. Nevertheless, is placed close to the to 1 is ff, internal resistance of the series or fewer device has, optimized according conditions ISC and VOC, a larger proportion of the product of percentage load transmits it. Pinc when the power being incident the device, device for power efficient transmission of (ηp) can be calculated such as to.: Semiconductor substantial internal which takes up the volume to produce the electric field created, the conventional method in particular relation to distribution of molecular quantum energy state of an appropriately selected conductivity characteristics of a material having an by a rope. juxtaposed-layered 2. These 2 photovoltaic junction is provided on the interface of two called. In traditional semiconductor theory, a material for the PV to form a junction is generally called type p or n. Wherein, n type of a major portion of the carrier ., meaning that the as electronic type. The relative free energy state as the number of electronic in a material having a. can be taken into account. P type of a major portion of the carrier type hole was.. These materials the activating step of the relative free energy state has in a region which faces. Type of background art, a titanium dioxide layer or silicon dioxide been generated, a content item request of a major portion of the unreacted carrier concentration expressed by the deficiency or impurities according to a non-intentional doping by mainly than θ1.. Impurities and a Fermi concentration and a level value or of energy, the conduction band minimum energy and the atomic is in between maximum energy band, and decides the. Fermi energy 1/2 probability is below a predetermined a footprint that corresponding to a value of the energy represented by a statistical molecular quantum energy state can be characterized in that occupation.. The conduction band minimum energy in the vicinity of electronic predominantly Fermi energy exhibits demonstrate that carrier. Fermi energy in the vicinity of maximum energy band user won the hole this dominant carrier demonstrate that exhibits. Therefore, Fermi energy a traditional semiconductor a particular feature of main characteristics is, circular PV. interface p-n a traditional, junction. The term "rectifying" asymmetrically interface among other benefits, characterized is that conduction, i.e. electronic preferably a one-way interface charge-transporting that it supports exhibits. Rectification of an appropriately selected generally a gap from the interface between the relative to electric field built. Makingcomprising inorganic semiconductor traditional p-n the internal joint for PV cell sets the field. Literature [Tang, Appl. Phys Lett. 48, 183 (1986)] reported to initial organic thin film battery as a traditional inorganic PV cell similar as are employed in includes heterojunction of. However, in addition to setting of the joint type p-n, hetero-junction of energy level is play a significant role in addition are recognized that have now. Organic D-A hetero-junction in an organic cancellation energy level process light generating material is a property that is the Sla parameter PV organic due to operation of the device is considered to be important. The residue of the organic substances which optical excitation, topical frenkelexciton generated (Frenkel) or the charge transport. For electric detecting or current generating occurs, repellent exciton is composed should is decomposed into electrons and holes. The process is built-in electric field but can be derived by, organic device (about F 106 V/cm) efficiently in an electric field typically found in. low. Organic material of the most effective an exciton dissociated (D-A) a donor-acceptor is occurs at the interface. Such at the interface, low ionization potential clipping and bit having affinity high material a acceptor material and a heterojunction is formed on. Donor and acceptor according depends on the deflection of an energy level of, this dissociated excitons favorable in energy at the interface in, acceptor condition in the fusion-promoting material magnetron bipolar free electrons donor they produce for erecting a tower generating to bipolar hole free condition in the fusion-promoting material. Organic PV cell, traditional silicone-based device as compared with a, has many potential benefits. Organic PV cell is light in weight and, which is economical to usage, flexible plastic foil cost can be and then deposited on a substrate. However, organic PV devices typically order of 1% hereinafter is a relatively low external quantum efficiency (electromagnetic radiation efficiency electric converter) has. The, partially, unique photoconductive process order number 2. is believed due to a properties. I.e., generating an exciton generating a carrier, . requiring diffusion and ionizing or collection. Each such associated with efficiency (η) is present. [...] can be used in conjunction, easy to a.: P in the case of power efficiency, EXT in the case of external quantum efficiency, photon absorbance A in the case of, in the case of diffusion ED, when the duration of the collection of CC, in the case of internal quantum efficiency and INT. Using this indication: Excitons diffusion length (LD) generally optical absorption lengths (about 500 Å) and much less than the (LD about 50 Δ), multiple or highly folded interface thick, a that are resistant thus, cell, or low optical absorption efficiency; a thin cells (trade-off) transaction between. need. For solar InP and GaAs grown lattice match III-V group compound or silicon solar cell used in amorphous oxides and other material that may be made from an acid or a window layer band gap large using contact layer inorganic solar cell to be at -1.5 to performance of. Such layer is Schottky barrier and in both device junction PN solar cell photocurrent and boosts the voltage approximate to a volt. A window layer acid or a contact layer currently the material used for the inorganic semiconductor and dielectric are not necessarily limited to. Inorganic solar cells as a window is the use of conductive organic material is disclosure herein. Prior to, growth of organic molecules to inorganic substrate junction pharmacokinetic and been completely irradiates characterized. Organic material the for passivating a surface the inorganic material, the mask for reducing dark current and, transistor can act as the gate dielectric in addition to be been found. Illumination source are an inorganic use solar cell in addition he tried hard to reason out the using hybrid junction. However, the goal is to an exciton dissociation and charge collecting to assist with addition of an inorganic organic matrix.. Inorganic solar cell in order to improve the performance a window layer in which an organic using an it has proven to didn't. A wide variety of organic material removed from a passivating and surface energy level, this inorganic solar cells which are extremely a window layer a suitable application. As described herein, a window solar cells Schottky barrier InP as [...] dianhydride (PTCDA) is 3, 4, 9, 10-is disclosure. Prior to, and forming an inorganic and it lies flat molecules PTCDA uniform on semiconductor surface that can be grown in the a in addition, in many cases, a Schottky barrier-height can enhance the it has been found that. In order to to prevent substrate as, PTCDA InP headspace of voltage approximate to a volt and power conversion efficiency of solar cell to be at -1.5 to. The present disclosure content the anode; cathode ; inorganic substrate; and 1 including at least one organic window layer relates to device. In one aspect one embodiment, said device 1 includes one or more inorganic epi. Window layer organic disclosure herein between the anode and the cathode, and the abutment between the e.g. inorganic semiconductor layer, for example one or more inorganic epitaxial 1 anode between the. In one aspect one embodiment, a device is disclosure, at least one organic window 1 as compared with a device which the space is, in lighting AM1.5G optical 1 Voc increase; increased conversion power in lighting AM1.5G optical 1 ; Schottky barrier-height increase; characterized for reduction of dark current or forward exhibits one or more of. Anode, cathode, inorganic substrate, and 1 sensitive device having one or more inorganic epi method as to increase the performance of, one or more inorganic epitaxial said anode said 1 1 between the at least one organic a window layer the act of positioning a including method is in addition disclosure is. Furthermore, anode, cathode, inorganic substrate, and one or more inorganic epi 1 Schottky sensitive device including a barrier-height which increase the as method, one or more inorganic epitaxial 1 anode 1 between the at least one organic a window layer the act of positioning a including method is disclosure is. The present disclosure content of another aspect features and said drawing with an with an exemplary aspect of an embodiment is to make it easier to from the following description will clear. All device for the sake of convenience width example height dimension exaggerated in connection with that show a to significantly different. Figure 1 shows a also, (a) 3, 4, 9, 10- [...] dianhydride (PTCDA) contact (b) PTCDA and which do not have interfacial layer having interfacial layer, has a lightly doped thickness m micro 4 having absorption zone p-InP Schottky barrier solar cell-layered structure including more, exhibiting manner. Figure 2, 3 nm PTCDA contact interfacial layer having the same and which do not have, InP Schottky barrier solar cell is a high speed shared channel show external quantum efficiency (EQE) is a graph. Figure 3 of a cow different conditions AM1.5G sunlight and having a thickness layer PTCDA InP Schottky barrier of solar cell the measured current-voltage characteristics is a graph show. Figure 4 shows a different-conductive phase having a thickness layer PTCDA InP Schottky barrier solar cell power lighting various aspects of voltage approximate to a volt with the contour of the object for measuring in steel show is a graph. Figure 5 shows a different-conductive phase having a thickness layer PTCDA InP Schottky barrier solar cell various aspects of lighting power steel power in is a graph show conversion efficiency. Figure 6 shows a layer structure (a) for showing schemes and 2 micro m thickness of undoped weakly InP having absorption zone p-InP Schottky barrier solar cell current-voltage characteristics is a graph show (b). InP-PTCDA by spectroscopy light emitting ultrasonic Figure 7 bending or a measured energy level diagram is a graph show. Display number of energy unit is eV. Figure 8, a variety of thicknesses of PTCDA capping layer having the same and which do not have, and exhibiting photoluminescence p-InP substrate is a high speed shared channel is a graph. Figure 9 p-InP [...] epitaxial wafer, and 3, 4, 9, 10- [...] dianhydride (PTCDA) capping layer varying thickness of of the wafer has equal (δ), photoluminescent (λ = 409 nm excitation in), and show (λ = 930 nm in emission) spectrum is a graph. Illustrating: a deduced from spectroscopy light emitting ultraviolet p-InP and PTCDA of energy level. The artwork unit of eV in number to 2000. Figure 10 shows a also δ = 0, 1 nm, 2 nm, 4 nm, PTCDA a window layer having a thickness of 8 nm and p-InP/PTCDA (J-V) voltage-current of solar cell each showing a feature is a graph. Detect: δ = 0, 3 nm, 30 nm and p-InP/PTCDA solar cell is a high speed shared channel having (symbolizing) (ray) dark J-V a fitting and characterized. (Filars) Figure 11 δ = 0, 3 nm (dashed lines), and 10 nm (point) PTCDA layer having a thickness of solar cells p-InP/PTCDA an external quantum efficiency (EQE) to wavelength is a graph show. PTCDA is shown as a reference absorption spectrum. PTCDA toe[...] between ITO and a thickness of 24 nm (BCP) (dashed lines point) and 30 nm MoO3 (dashed lines point point) an exciton blocking layer (EBL) of a device having a EQE is. is shown in addition. Detect: having EBL (filars), (dashed lines point) having 12 nm BCP, 30 nm MoO3 (dashed lines point point) having as quartz/PTCDA/an exciton blocking layer (EBL)/ ITO structure, in a photoluminescent of PTCDA. As photosensitive optoelectronic device used herein a solar cell, can be in particular Schottky barrier solar cell. As used herein the term "organic" organic photosensitive optoelectronic device can be used to manufacture small molecules which organic and polymeric products mass. "Small molecule" which is not in a polymeric means any organic substances which are, "small molecule" which is mounted in a substantially [...] may be bigger. Comprising repeating units in some cases a small molecule can be. For example, as substituents the use of long chain alkyl groups "small molecule" class does not to remove molecular from. In addition a small molecule for example polymer backbone or as pendant groups on polymer as part of the framework of the canopy shelter can be introduced into. In addition a small molecule core moieties chemical series of established on a shell core of dendrimers. can act as moieties. Fluorescence or phosphorescence or emit light moiety maybe core of dendrimers can be small molecule emitter. "Small molecule" can be a dendrimer. Generally, each molecular small molecule with a limited having the same molecular weight has formula, molecular polymer a way that it can be varied each with a limited are having molecular weights of has formula. As used herein "organic" heterocarbyl hydrofluorocarbons substituted heterocarbyl hydroperoxide has heteroatoms and includes metal complex of ligands. The organic matter is described herein, polymeric material or a small molecule organic material whatever, p or n type organic semiconductor may include in addition to be is think. Used herein that term "layer" in X-Y dimension difference 1, i.e., is, length and width of the photosensitive device along a. or components from members of. Layer term a single layer or material which is not restricted necessarily an absorbent comprising a sheet of a should understood. Furthermore, this layer of a material different (are) or layers including (are) interface (are) the surface of the a may be deficient in understood the new device must be powered on, wherein said surface other materials (are) or layers, as transmitted through or with (are), exhibits and kink or tortuous network. Similarly, can be is discontinuous layer, along the dimension X-Y said other layers discontinuous layer (are) or material (are) is obstructed by and may be suspended or otherwise in addition to should understood. "Electrode" and "contact" the term to an external circuit or current light generating current or voltage bias device for providing means layer to supply information for are used in herein. I.e., electrode, and contacts a organic photosensitive of optoelectronic devices active area and the wire, wiring, trace and to an external circuit for transporting charge carriers is produced by extracting Angelica other means provides, the bushing presenting an interface. Anode and cathode. example. American patent number 6,352,777 call (electrode its disclosure made herein content) a photosensitive optoelectronic device that can be used in electrode, provides an example of and contacts. Photosensitive optoelectronic device, device external peripheral electromagnetic radiation active photoconductive is maximum amount of acceptable causing the communication device to enter a an interior area may preferably. I.e., electromagnetic radiation photoconductive layer (are) must arrive at the and, wherein the a photoconductive by absorption can be converted into electricity. Is at least one of electrical contacts this is frequently incident electromagnetic radiation and to minimize the reflecting open absorbent with minimal wants the treatment to be considered are described. In some cases, such a contact has a substantially transparent must. , Are perceived to absorb without cell are passed through the end portion the wave-length-converted light through the cells again to be reflected to solution in which a counter-electrode can be reflective material. As used herein, where the different layers of or different substance layer of material the order of layer or layers are associated peripheral in wavelength at least 50% about of electromagnetic radiation transmitted through the layer or layers to permit the variable to be "transparent" when. referred to as to. Similarly, some in wavelength associated, however about 50% allows electromagnetic radiation peripheral reduced in transmittance of less than a layer having a "translucent". referred to as to. The term "cathode" to employ one having an style a. PV resistively and under irradiation peripheral device, the cover is attached to the body connected to PV laminate having no applied voltage PV or laminated device in single unit device, electrons moves a cathode from optical conductive material. Similarly, the term "anode", lighting under PV device, hole resides formed by in situ growth from the photoconductive material and as used herein, to move, the opposite type to. equivalent to electromigration. Are arranged herein the terms had is, anode and cathode electrode or. in a significant to such data out of charge transport layer. As used herein the "upper" (in the presence of) substrate structure furthest from classes means that, a substrate structure "bottom" meaning that the closest to.. Device substrate structure when that do not contain an, "upper" the reflector. meaning that the furthest from an electrode. For example, in the case of a device having a two electrodes 2, bottom electrode and an electrode closest to a substrate structure, number 1 electrode packet driver and method for processing generally. Bottom electrodes are formed upon a substrate by bottom side closest to, and of an upper side away away from the substrate has surface of 2. Number 1 number 2 layer "on or disposed on a" layer "on top" number 2 layer when described as disposed, are arranged further away from the substrate layer number 1. Number 1 number 2 layer layer "in physical contact with a" is not the substrate a, number 1 number 2 layer and a layer is captured in another layer may be present. For example, cathode, an organic layer between various even if they, anode anode "on or disposed on a" disposed "on top" can be described as. A liquid crystal layer is formed from the surface this does not have a. understood. Rather, this metal contacts aperture in rear (window) when there is a layer from a substrate side can be incident. I.e., device is inverted a window for exposing a upper contact unit is equipped with an can be opaque. In one aspect is embodiment, in an alternative fabrication method of epitaxial substrate transparent to light, it is necessary that. Light upper surface a light beam incident to the formed contact unit is equipped with an in addition translucent includes a thin metallic can be. In addition this many transparent conductive oxide can be any of (TCO). Some embodiment in one aspect, a transparent or semi-transparent transparent, conductive oxide having a thickness sufficient to render the metal or metal substitute and transparent oxide is chosen from. In one aspect some embodiment, transparent electrodes are formed upon a indium tin oxide (ITO), gallium oxide indium tin (GITO), a coating of fluorine doped tin oxide (SnO2: F or FTO), indium tin oxide and zinc oxide (ZITO), such a transparent, conductive oxide is chosen from. The present disclosure content, typically at anode and [...] contact portions of posts a 2, inorganic substrate, such as a semiconductor substrate, and at least one inorganic substrate, a charging power mode, and being arranged in between 1 including at least one organic window layer relates to device. Organic a window layer to the substrate, the substrate or epitaxial inorganic thereon directly that can be deposited is understood. Therefore, a window layer is between and to fall generally flow channel according to the selective, the specifically anode between the inorganic substrate, or disposed between the inorganic cathode can be described. In the presence of inorganic epitaxial, organic a window layer the prior noted act of adding contacts (one anode or cathode) and a between the inorganic epitaxial. In one aspect one embodiment, organic a window layer coating the optical absorbing the photocurrent exciton moving inorganic-which is converted can be produced. By the mechanism, may be further increased the efficiency of the device. Schottky barrier Figure 1 the present invention according to p-InP more, exhibiting solar cell. In one aspect is embodiment, (a) 3, 4, 9, 10- [...] dianhydride (PTCDA) contact and which do not have interfacial layer having interfacial layer (b) PTCDA, 4 micro m thickness having absorption zone has a lightly doped Schottky barrier p-InP cross section layer structure is of solar cell is shown. PTCDA layer Figure 2 3 nm PTCDA layer device which do not have a measured wavelength 950 nm to 400 nm is EQE closely resemble over spectral range of that show. Figure 3 a variety of formations in illuminate the sunlight and cow having a thickness layer PTCDA solar cell InP show current-voltage characteristics. Optical closely resemble a all devices show and current, similar is the measured EQE profile as a result, the center line. However, having a window layer PTCDA window layer PTCDA with the device among the devices that has no voltage approximate to a volt of (Voc) present in clear of difference. In lighting sunlight of the device does not have a PTCDA Voc the 0.65 V and; and device of device comprising layer 4 nm PTCDA Voc the 0.75 V is is increased in steps. Voltage to illumination light supplied to the light 4 is shown in a and also strength, the PTCDA and device of device comprising Voc is PTCDA layer as compared to a device that does not all lighting strength show that higher. PTCDA filled in a window having a layer of a pressure sensitive since without causing deterioration of all devices, power conversion efficiency in lighting AM1.5G in the daylight additionally PTCDA 13.2 ± 0.5% device that does not have a 4 nm PTCDA from a device having an to 15.4 ± 0.4% (also 5) is is increased in steps. (Also 6 (a) is also 6 (b) is shown in a negative) A thinner (m micro 2) doped drain region and a shallow doped absorbing layer having solar cells Schottky barrier InP a in the other set the current-voltage curve (also 6 (a) is also 6 (b) is shown in a negative). In the lighting sunlight voltage supplied to the light device that does not have a PTCDA from 0.62 V device for to a device having a window layer 3 nm PTCDA 0.78 V is is increased in steps. Window having a layer of a pressure sensitive Voc to increase the light source in which various kinds is a reason for the. Function of layer PTCDA for to understand, the present inventor are ultraviolet optoelectronic spectroscopy (UPS; Ultraviolet Photoelectron Spectroscopy) using the n bit parallel data inputted for measuring energy level at the interface InP-PTCDA, Figure 7 a measured energy level diagram show. Vacuum auxiliary a small interface-bipolar due to. travel 0.3 eV InP-PTCDA at the interface. PTCDA depth of non-occupied molecular orbital (LUMO) energy level and a InP the conduction band edge (Ec) 0.1 eV is less than the difference between the. Edge band atom InP (Ev) and a PTCDA the highest occupied molecular orbital, (HOMO) is 0.8 eV the for discontinuity of between energy level. The measured energy level alignment, PTCDA from a InP proceeds to an energy barrier made of the large to overcome key, electron conducting a InP-PTCDA not disturbed at the interface. As a result, over a Schottky barrier to ITO from InP hole thermionic emission due to dark current biased front Schottky diode will is suppressed. Instead, dark current biased front InP primarily ITO hole and in bulk and of electrons that have injected from a. current recombinant interface. Forward dark current inhibition of Voc to increase to. PTCDA layer introduced by the hole energy barrier in addition in electrode right help support and collecting a generated carriers, i.e. ITO electrode instead p+-InP the indication for hole light generating substrate. Charged carrier for collecting device formed through a built-in electric field, 0 is lower substrate to accomplish a substrate assembly may not specific capacities under significant bias. However, Voc layer to the extent that the contact voltage, when which cause a much lower field built-in device, light generating a ITO contact part can be spread optical current can be the loss. Hole energy barrier PTCDA p+-InP substrate and can indicate a diffusion hole, is a current-voltage characteristics as if the observed in Voc to increase to near photocurrent. The in addition I-V quadrant below pushed out in the number 4 curve Voc may contribute to its increase of. Other solar cells important parameters is carrier lifetime speed or recombinant a surface. Recombinant supporting surfaces order to compare for qualitatively life, the present inventor-in correctly having capping layers PTCDA InP PTCDA film and does not have a capping layer (PL) it was determined that a photoluminescent film InP. The result is also 8 is shown in a.. PL PTCDA capping layers of a wafer with the wafer management scheme so that it, significantly higher a, carrier immeasurably longer is it service life. Carrier recombinant reduction and carrier lifetime increase that achieve a high voltage approximate to a volt is essentially in. Furthermore, a change in a barrier-height Schottky Voc may contribute to its increase. Effective Schottky barrier height in Schottky diode p-InP PTCDA interfacial layer when using it has been discovered that enhanced. From analysis of the present inventor, having a window layer PTCDA p-InP Schottky barrier of solar cell Voc. is the result of the increase in the multiple factor. In the widest light, anode; cathode ; inorganic substrate; being arranged in between and at least one organic window layer 1 including Schottky barrier, such as solar cells, is disclosure device. In one aspect one embodiment, the device described herein, at least one organic window said 1 as compared with a device which the space is, in lighting AM1.5G optical 1 Voc increase; increased conversion power in lighting AM1.5G optical 1 ; Schottky barrier-height increase; and a forward reduced dark current exhibits one or more of features. In one aspect one embodiment, inorganic substrate device described herein 1 and one or more inorganic epitaxial 1 being arranged in between one or more inorganic buffer. further include a layer. In one aspect one embodiment, substrate of the detected devices (ITO) indium tin oxide transparent, conductive oxide anode, such a transparent, conductive mass. Some embodiment in one aspect, a transparent or semi-transparent transparent, conductive oxide having a thickness sufficient to render the metal or metal substitute and transparent oxide is chosen from. In one aspect some embodiment, transparent electrodes are formed upon a indium tin oxide (ITO), gallium oxide indium tin (GITO), a coating of fluorine doped tin oxide (SnO2: F or FTO), indium tin oxide and zinc oxide (ZITO), such a transparent, conductive oxide is chosen from. In one aspect one embodiment, cathode of the detected devices substrate Zn, Au, Al, Ag, alloys thereof, and their selected from stacks of at least one mass 1. For example, may comprise an Zn/Au cathode. Other embodiment in one aspect, the inorganic substrate Ge, Si, GaAs, InP, GaN, AlN, CdTe, and combinations thereof mass selected from. Other materials that can be used a copper indium gallium (di) selenide includes (CIGS). In one aspect one embodiment, the inorganic substrate may comprise an InP type p. Inorganic a capping layer Ge, Si, GaAs, InP, GaN, AlN, CdTe, and combinations thereof including said inorganic substrate to the same substrate may include a material. Other materials that can be used a copper indium gallium (di) selenide includes (CIGS). Other embodiment in one aspect, the buffer layers inorganic one or more 1 InP and GaAs 1 which is selected from at least one such as at least one 1 III-V group mass. As substrate prior to, the a window layer at least one organic 1 3, 4, 9, 10- [...] dianhydride (PTCDA) or naphthalene tetracarboxylic acid anhydride (NTCDA) may include a. Some embodiment in one aspect, such crystalline organics translucent in a wavelength which interest (including polymer) organic semiconductor may be any and/or; n or p looped and/or-like conductive; or p enhance to barrier height of n-type substrate. For example, but not limited to poly (3- [...]) (P3HT), phenyl-C61-butyric acid methyl ester (PCBM), sub (SubPc) [...] , [...] , and copper phthalamide with it is not a company (CuPc), tin phthalamide with it is not a company : (SnPc). 1 25 nm hereinafter at least one organic layer, e.g. has a thickness of 10 nm hereinafter. 1 anode 1 between the one or more inorganic epitaxial at least one organic a window layer the act of positioning a including anode, cathode, inorganic substrate, and 1 sensitive device having one or more inorganic epi method is to increase the performance of is in addition disclosure. Increase of sensitive device performance of the method, at least one organic window said 1 as compared with a device which the space is, in lighting AM1.5G optical 1 Voc increase; increased conversion power in lighting AM1.5G optical 1 ; Schottky barrier-height increase; and a forward characterized for reduction of dark current indicative of one or more of is and verified by device. Inorganic substrate and method described herein one or more inorganic epitaxial 1 1 being arranged in between one or more inorganic buffer layer, said layer including a. In one aspect one embodiment, ITO anode, alloys thereof, and their selected from stacks of at least one mass 1. Other embodiment in one aspect, cathode Zn, Au, Al, alloys thereof, and their a metal from stacks of such as sufficient to ohmic contact semiconductive material and any mass. In one aspect one embodiment, the inorganic substrate Ge, Si, GaAs, InP, GaN, AlN, CdTe, and combinations thereof mass selected from. Inorganic substrate other materials that can be used as a copper indium gallium (di) selenide includes (CIGS). In one aspect one embodiment, one or more inorganic a capping layer 1 InP and GaAs 1 which is selected from at least one such as at least one 1 III-V group mass. In one aspect one embodiment, the buffer layers inorganic one or more 1 1 to and during operation of the at least one group III-V, the buffer layers inorganic one or more 1 InP and GaAs 1 which is selected from at least one mass. In one aspect one embodiment, the a window layer at least one organic 1 3, 4, 9, 10- [...] dianhydride (PTCDA) or naphthalene tetracarboxylic acid anhydride (NTCDA) includes. 1 at least one organic layer has a thickness of 10 nm hereinafter. 1 anode herein one or more inorganic epitaxial 1 between the at least one organic a window layer the act of positioning a including anode, cathode, inorganic substrate, and one or more inorganic epi 1 Schottky sensitive device including a barrier-height increase of as method, device is, at least one organic window 1 as compared with a device which the space is, in lighting AM1.5G optical 1 Voc increase; increased conversion power in lighting AM1.5G optical 1 ; and a forward characterized for reduction of dark current method is indicative of one or more of is in addition disclosure. Embodiment aspect described herein a further example, but not limited to, is exemplary. In the embodiment P type Zn doped epitaxial [...] solar cell structure (100) InP won gas substrate the grown by molecular beam epitaxy. Epitaxial thickness of 0.1 micro m [...] structure Be doped (3×1018 cm-3) p type InP a weak thickness m micro 4 and buffer layers doped Be (3×1016 cm-3) p type InP absorbing layer be at 500. After, which the space is window PTCDA [...] epitaxial wafer Schottky barrier solar cell and a sacrificial layer window PTCDA both solar cell film. To in time immediately before the processing device, surface of a wafer epi-InP NR4 OH immersion 1 the original processing such as Chinese cabbage, cabbage, remove the oxide. Traditional InP Schottky barrier solar cell in order to produce a, indium tin oxide (ITO) electrode the surface treatment of InP epi-wafer 1 (a) also by sputtering directly on top of the front/rear sides of the structure shown in. A device having a window layer PTCDA in order to produce a, PTCDA InP surface treatment initially thin layer of vacuum on the wafer epi-supplied to using thermal vapor. After, PTCDA layer ITO electrode 1 (b) also by sputtering to the front/rear sides of the device structure shown in. Device used in purification train sublimation before the deposition material PTCDA method using purified times 3. Grown, 140 °C call is held at the acetone, isopropanol during 5 minutes, after 25% NH4 OH:H2 O 1 during immersion subsequent minutes by removing oxide original by [...] epitaxial equipment section. A back contact the 20 nm Pd/5 nm Zn/20 nm Pd/200 nm Au consists, after 1 minutes in 400 °C was, thereby alloying the. Traditional InP Schottky barrier solar cell by circular holes diameter 1 mm through a mask the shadow having ITO was and has been prepared by the sputter deposition. In the case of initially deposition rate 100 Å 0.1 Å / CF2O, 0.3 Å after increased to thereby cause/S. was achieve entire thickness of 1000 Å. PTCDA source material by sublimation before the deposition of the 3 purified times. Δ = 1 nm to 30 nm thickness pressure is a base a window layer from 2×10-6 Torr disconnects within the high vacuum chamber less than 1 Å / s, to an vacuum made at speeds in the order of the deposited by thermal vapor. A window layer device ITO sputter deposition rate a and thickness ITO/InP was similar to that used in diode. OI at the interface energy level alignment surge X and (UPS) spectroscopy light emitting ultraviolet light emission spectroscopy was by using (XPS). Photoluminescent (PL) data detection angles incident and of 45° using spectral in fluorometer obtained. Monochromatic device, lock in (lock-in) amplifier, and tungsten-halogen lighting source (is the intensity of corrected Si is reference photo-detector) diode using external quantum efficiency (EQE) is obtained. Cow AM1.5G and simulation in semiconductor illuminate the same parameters (J)-to-voltage (V) current density it was determined that features. International regenerative energy laboratory using solar cell reference (National Renewable Energy Laboratory) Si for correcting the illumination intensity. For win PTCDA also Figure 9 shows a second processor does not have the same having epitaxial InP [...] layer show spectrum and PL. InP PL of the sample coating PTCDA InP uncoated strength factor greater than that of the small-diameter been it 2. Now, PL quantum efficiency (ηPL) the ηPL ∝ krad / (krad + knr + ks) (wherein, krad copy recombinant speed and, knr a semiconductor bulk in copy recombinant speed and, ks by a non-replicative surface recombinant speed) is represented by. In a short-wave used in Figure 9 the excitation optical (λ = 409 nm) and for filling deficiency surface muscle ticket surface and thus there effect, the increase in the PL ks exhibits reduction. Specifically, InP spectrum of which depends on the adsorption in micro InP λ = 900 nm absorption of length of about 1 m and, to a modem this λ = 400 nm in about 20 nm was.. When depositing a surface InP for PTCDA, and injected from a PTCDA hole resides, the neutralizing trap InP the negatively charged on the surface. Figure 9 is, as shown in illustrating φB enhance to. As a result, recombinant replicative surface non describes. reduces in density trap an active surface, and. PTCDA herein consequently reducing the surface recombination, verified by spectrum, the, in particular the present inventor are δ = 5 nm PTCDA is short wavelength excitation signal in the optic zone that it is possible for highest frequency when observation under an, PL (λ > 580 nm) having a wavelength longer first isolation layer is formed on the strength in the shorter wavelengths significantly more in (λ < 420 nm) show higher. Capping PTCDA PL lighting over time strength of the sample according to the disclosed edge connector is that it increased slightly in addition of view, deepest surface trap charging is completed the. in disentranced that it would take for the few minutes. A is derived from data UPS PTCDA/InP of Figure 9 illustrating a energy level on the bonding interfaces to bond is shown in a.. Growth any data with its original the p-InP EF 4.2 ± 0.1 eV compared to indicates the level surface vacuum in, the PTCDA deposited InP 4.5 ± 0.1 eV has level and method of. The bending energy band on the surface prior to deposition InP PTCDA (dashed lines, φB = 1.1 ± 0.1 eV) and after deposition PTCDA (filars, φB ' = φB +ΔφB) more, exhibiting both. Wherein, ΔφB the PTCDA surface state in deposition of charge change. of which is an increase increment a barrier-height emanating from the. 5 Å PTCDA after deposition, InP XPS spectrum in further with respect to system in which the Fermi level the picks In 3d high binding energy 20 meV and travel, allows more surface band bending and ΔφB exhibits demonstrate that order of 20 meV is. (HOMO) energy level is the highest occupied molecular orbital, PTCDA EF since the a lower 1.9 ± 0.1 eV, PTCDA HOMO and maximum band atom InP between the for discontinuity of (0.8-Δ φB) eV is. PTCDA depth of non-occupied molecular orbital (LUMO) energy level and a difference of energy between minimum the conduction band InP are negligible. As a result, a window layer in a direct liquid fuel cell light generating electrons through the PTCDA without engineering the energy barrier at an ITO from InP. be transported to the electrode. Figure 10 of a cow AM1.5G sunlight and having a variety of formations in illuminate the δ InP show characterized J-V of solar cell. All δ ≤ 4 nm optical a similar device more, exhibiting current density. However, in the case of a device that does not having PTCDA (δ = 0) Voc = 0.62 ± 0.3 V and, when and device of device comprising δ=4 nm Voc = 0.75 ± 0.3 V is. Δ = 0 δ = 4 nm from 13.2 ± 0.5% in the case of power conversion efficiency in the case of having a have been increased corresponding to 15.4 ± 0.4%. Front J-V features Is fitting using. Also as shown in 10 illustrating measured prepit Voc together with table I described such a diode converts (n), Serial resistivity (R), and saturated dark current (J). to produce. OI interface (Wherein, JS,0 the PTCDA a window layer having a device that does not by dark current saturation of) for generating semiconductor heterojunction can be modeled as it has been discovered that. Jsc estimates a current density optical-short circuit, the present inventor are Voc into the received data to: InP-PTCDA device, Voc increase Js reduction and n. due both increased. Js a barrier-height Schottky deposition PTCDA reduction pin. from an increase. N PTCDA due to increase turndown over a front over InP is contribute reduction bias voltage. Rs is δ does not of increasing to increased, PTCDA and a device having an PTCDA that does not have a unique device that produce charging rate a to significantly different. Dark current fitting parameters [table I] EQE to Figure 11 for various δ λ copyright 2001. Δ ITO/InP in. close to < 3 nm 의 경우 , EQE 늘 ㄴ λ >500 nm EQE of solar cell. However, shorter at a wavelength, PTCDA capping cells recombinant and surface increase transmission PTCDA the EQE the increased. When δ = 10 nm, the EQE PTCDA between 580 nm and a λ = 420 nm significantly reduces the absorption zone. Also measurements of the PTCDA PL in quartz substrate 11, illustrating for the samples in PL spectrum PTCDA as though the memory is deduced from exciton generated in the ITO deposited on their surface and to preart quenching by exhibits. To reduce [...] , toe[...] (BCP) or MoO3 an exciton blocking layer (EBL) is between the ITO and a PTCDA is SiO, PTCDA PL. greatly increasing the strength. BCP when a a window layer for use in solar cells, is filled within loss EQE λ = 480 nm in, MoO3 the use of absorbent PTCDA in wavelength its corresponding maximum generating to peak. This result may in organic (for example, PTCDA) (InP) inorganic semiconductor exciton dissociated in the interface with, ultimately traditional "passive" a window layer is prepared by solar cell exceeds a shows that contribute to an increase efficiency.. The present inventor are exposed to air during days after radiating plate is present the, stability of device PTCDA-InP did not test system. The PTCDA is observed that a highly stable organic compounds as a result, the center line. The abstract, PTCDA InP in solar cell ITO/PTCDA/InP is dissociated an exciton on the surface are adapted to produce an electric current optical due to recombinant while the front end of an engine block a window layer can be used as it has been discovered that. A methods for neutralizing surface state InP mainly caused by that are involved Voc the thickness of 4 nm by using a window layer PTCDA solar cell power conversion efficiency can be increasing from 13.2 ± 0.5% 15.4 ± 0.4%. As is described generally herein, specifically said embodiment as exemplary aspect, solar cells inorganic organic material, use can be made of, as a window. A window layer as by using PTCDA p-InP Schottky barrier of solar cell Voc is is enhanced. Without theoretical any classified into items of which are held in, is to contribute to least effect is : (1) PTCDA the hole of a front generating the energy barrier at an inhibit hole thermionic emission dark current, the (2) PTCDA Voc light generating in a region which faces in voltage near p+-InP inform the user and assist in the directed to substrate, recombinant a carrier a window layer (3) PTCDA from flowing outside through the end of to reduce the carrier, (4) PTCDA interfacial layer increase to a Schottky barrier height. Inorganic a window layer than that in a radial direction, the organic matter is various has the advantage. Organic material thermal vapor or solution is of the body and can be be easily deposited. Furthermore, a wide variety of other organic material may have a energy level, different materials in diode and manufacturing method of the same and structure can fitting requirements, often the desired pattern of semiconductive and dielectric inorganic wherein can be counted out satisfactory. For example, solar cells Schottky barrier p-InP an excellent a window layer free. In0.52 Al0.48 As slightly but having a larger band gap, this is not suitable for solar cell Schottky barrier p-InP efficiency enhanced and the, InP this are used to irradiate at the interface with electronic energy barrier is because engage the sink hole-transport layer and a hole. PTCDA much more as a window layer are in this case has a suitable energy level. Without alternatively described, the employed components to specification, reaction conditions, and other characteristics described amount of parameters or all digits of the term "about" is large variation of the air-in all the cases by will understood. Therefore, without alternatively described, a a and appends specification the parameters a numeric described claim a approximation should understood. At least, equalized signal claim principle of without intended to limiting an application of, a large according to the report parameters number re number and conventional coarse enable should read in terms of. Other embodiment of the present invention a disclosure herein aspect on the consideration of the embodiment of the present invention specification and will nontrivial twiddle factors and to one skilled in the art. Specification and embodiment relate which is thin deemed behaves as the only subtractive decide, for example only, of the present invention the mental range and true is indicated by the claim. Disclosed is a device comprising: an anode; a cathode; an inorganic substrate; and at least one organic window layer positioned between: the anode and the inorganic substrate; or the cathode and the inorganic substrate. Also disclosed is a method of enhancing the performance of a photosensitive device having an anode, a cathode, and an inorganic substrate, comprising: positioning at least one organic window layer between the anode and the cathode. In one embodiment the organic window layer may absorb light and generate excitons that migrate to the inorganic where they convert to photocurrent, thereby increasing the efficiency of the device. Also disclosed is a method of enhancing Schottky barrier height of a photosensitive device, the method being substantially similar to the previously defined method. Anode; cathode ; inorganic substrate; and said inorganic substrate between the anode; and/or said cathode being arranged in between said inorganic substrate 1 at least one organic window layer including device. According to Claim 1, window at least one organic said 1 as compared with a device which the space is, in lighting AM1.5G optical 1 Voc increase; increased conversion power in lighting AM1.5G optical 1 ; Schottky barrier-height increase; characterized for reduction of dark current or visiting one after another direction representing one or more of a device. According to Claim 1, said inorganic substrate onto the 1 (epilayer) one or more inorganic epitaxial further including device. According to Claim 3, one or more inorganic epitaxial said inorganic substrate and said 1 being arranged in between one or more inorganic buffer layers 1 further including device. According to Claim 3, the a window layer organic said said inorganic epitaxial between the anode; and/or said cathode being located between said inorganic epitaxial device. According to Claim 1, said anode or p selected from type semiconductor n including semiconductive material therein which is a device. According to Claim 6, a device including said ITO anode. According to Claim 1, ohmic contact semiconductive material and said cathode sufficient to 1 a device including at least one substance. According to Claim 8, ohmic contact semiconductive material and said material sufficient to Zn, Au, Al, Ag, alloys thereof, and their chosen from stacks of devices. According to Claim 1, said inorganic substrate a device including the semiconductor material. According to Claim 10, Ge the semiconductor material is said, Si, GaAs, InP, GaN, AlN, CdTe, ZnTe, copper indium gallium (di) selenide (CIGS), and combinations thereof is selected from device. According to Claim 3, a capping layer inorganic one or more said 1 at least one 1 III-V group material, Ge, Si, GaAs, InP, GaN, AlN, CdTe, ZnTe, copper indium gallium (di) selenide (CIGS), and combinations thereof including a device. According to Claim 12, GaAs InP and said 1 one or more inorganic a capping layer 1 which is selected from a device including at least one substance. According to Claim 3, the 1 one or more inorganic buffer layers including at least one 1 III-V a device group material. According to Claim 14, the buffer layers inorganic one or more said 1 InP and GaAs 1 which is selected from a device including at least one substance. According to Claim 1, 3, 4, 9, 10-the a window layer at least one organic said 1 [...] dianhydride (PTCDA) or naphthalene tetracarboxylic acid anhydride (NTCDA) including of a device. According to Claim 16, the a window layer at least one organic said 1 having a thickness of 25 nm hereinafter a device. According to Claim 1, said device a sacrificial solar cell devices. Anode, cathode, inorganic having a substrate with a light-sensitive device performance of method as to increase the, 1 said at least one organic window layer between the inorganic substrate said anode; and/or said inorganic substrate between said cathode including method placing the article to be treated. According to Claim 19, said device, said 1 at least one organic window as compared with a device which the space is, in lighting AM1.5G optical 1 Voc increase; increased conversion power in lighting AM1.5G optical 1 ; Schottky barrier-height increase; characterized for reduction of dark current or visiting one after another direction that indicates at least one of a method. According to Claim 19, onto the inorganic substrate said one or more inorganic epi 1 further including method. One or more inorganic buffer layer according to Claim 21, 1 said inorganic substrate and the sealant disposed between the one or more inorganic epitaxial said 1 further including method. According to Claim 22, said organic window layer between the inorganic epitaxial said anode; and/or said sealant disposed between the epitaxial inorganic said cathode further including method. According to Claim 19, said anode p or n type semiconductor material including semiconductive material therein which is selected from a method. According to Claim 24, a method for including said ITO anode. According to Claim 19, said cathode Zn, Au, Al, Ag, alloys thereof, and their selected from stacks of 1 a method including at least one substance. According to Claim 19, said Ge the inorganic substrate, Si, GaAs, InP, GaN, AlN, CdTe, ZnTe, copper indium gallium (di) selenide (CIGS), and combinations thereof including selected from a method. According to Claim 19, said 1 one or more inorganic a capping layer at least one 1 III-V group material, Ge, Si, GaAs, InP, GaN, AlN, CdTe, ZnTe, copper indium gallium (di) selenide (CIGS), a method including and combinations thereof. According to Claim 22, the buffer layers inorganic one or more said 1 InP and GaAs at least one 1 which is selected from group including material III-V a method. According to Claim 19, 3, 4, 9, 10-the a window layer at least one organic said 1 [...] dianhydride (PTCDA) or naphthalene tetracarboxylic acid anhydride (NTCDA) including of a method. According to Claim 30, the a window layer at least one organic said 1 having a thickness of 25 nm hereinafter a method. According to Claim 19, organic a window layer coating the optical absorbing exciton from moving inorganic portion of the device a generating method. According to Claim 32, generated exciton method is converting light into photo-current which. Anode, cathode, inorganic substrate Schottky sensitive device including a barrier-height which increase the method as, 1 said at least one organic window layer between the inorganic substrate said anode; and/or said inorganic disposed between the cathode in which, said device, said 1 at least one organic window as compared with a device which the space is, in lighting AM1.5G optical 1 Voc increase; increased conversion power in lighting AM1.5G optical 1 ; characterized for reduction of dark current or forward that indicates at least one of a method.
