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Космические корабли и станции, автоматические КА и методы их проектирования, бортовые комплексы управления, системы и средства жизнеобеспечения, особенности технологии производства ракетно-космических систем

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Мониторинг СМИ

Мониторинг СМИ и социальных сетей. Сканирование интернета, новостных сайтов, специализированных контентных площадок на базе мессенджеров. Гибкие настройки фильтров и первоначальных источников.

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05-02-2020 дата публикации

Полупроводниковый приемник инфракрасного излучения

Номер: RU0000195799U1
Автор: Глеб Георгиевич Коновалов, Сергей Иванович Лансков, Юрий Павлович Яковлев
Принадлежит: Общество с ограниченной ответственностью "АИБИ"

Полупроводниковый приемник инфракрасного (ИК) излучения содержит полупроводниковую подложку (1) AIIIBV с первой активной областью (2) на основе гетероструктуры, выполненной из твердых растворов AIIIBV, первый омический контакт (4), нанесенный на поверхность (3) активной области (2), и второй омический контакт (7), нанесенный на поверхность (6) периферийной области полупроводниковой подложки (1), противолежащей поверхности с первой активной областью (2). Вокруг первой активной области (2) на полупроводниковой подложке(1) выполнена вторая кольцевая активная область (8) на основе гетероструктуры, выполненной из твердых растворов AIIIBV, электрически отделенная от первой активной области (2). На активную область (8) нанесен третий омический контакт (10). В полупроводниковом приемнике ИК излучения обеспечена возможность проверки его работоспособности в любой момент времени. 6 з.п. ф-лы, 3 ил. РОССИЙСКАЯ ФЕДЕРАЦИЯ (19) RU (11) (13) 195 799 U1 (51) МПК H01L 31/0304 (2006.01) H01L 31/09 (2006.01) ФЕДЕРАЛЬНАЯ СЛУЖБА ПО ИНТЕЛЛЕКТУАЛЬНОЙ СОБСТВЕННОСТИ (12) ОПИСАНИЕ ПОЛЕЗНОЙ МОДЕЛИ К ПАТЕНТУ (52) СПК H01L 31/0304 (2019.08); H01L 31/09 (2019.08) (21)(22) Заявка: 2019127110, 27.08.2019 (24) Дата начала отсчета срока действия патента: Дата регистрации: (73) Патентообладатель(и): Общество с ограниченной ответственностью "АИБИ" (RU) 05.02.2020 (45) Опубликовано: 05.02.2020 Бюл. № 4 1 9 5 7 9 9 R U (54) ПОЛУПРОВОДНИКОВЫЙ ПРИЕМНИК ИНФРАКРАСНОГО ИЗЛУЧЕНИЯ (57) Реферат: Полупроводниковый приемник областью (2). Вокруг первой активной области инфракрасного (ИК) излучения содержит (2) на полупроводниковой подложке(1) полупроводниковую подложку (1) AIIIBV с выполнена вторая кольцевая активная область первой активной областью (2) на основе (8) на основе гетероструктуры, выполненной из гетероструктуры, выполненной из твердых твердых растворов AIIIBV, электрически растворов AIIIBV, первый омический контакт (4), отделенная от первой активной области (2). На нанесенный на поверхность (3) ...

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Номер записи: 1
22-03-2012 дата публикации

Infrared light detector

Номер: US20120068158A1
Автор: Patrick Nickels, Susumu Komiyama
Принадлежит: JAPAN SCIENCE AND TECHNOLOGY AGENCY

Provided is an infrared light detector 100 with a plurality of first electronic regions 10 which are electrically independent from each other and arranged in a specific direction, formed by dividing a single first electronic region. An outer electron system which is electrically connected to each of the plurality of first electronic regions 10 in a connected status is configured such that an electron energy level of excited sub-bands of each of the plurality of first electron regions 10 in a disconnected status is sufficiently higher than a Fermi level of each of second electronic regions 20 opposed to each of the first electronic regions 10 in a conduction channel 120.

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Номер записи: 2
25-04-2013 дата публикации

PHOTODETECTOR AND METHOD OF MANUFACTURING THE PHOTODETECTOR

Номер: US20130099203A1
Автор: Akita Katsushi, Fujii Kei, Iguchi Yasuhiro, Inada Hiroshi, Ishizuka Takashi, Nagai Youichi, Nakahata Hideaki
Принадлежит: Sumitomo Electric Industries, Ltd.

A photodetector and a method of manufacturing the photodetector are provided, in which variation in sensitivity is suppressed over the near-infrared region from the short wavelength side including 1.3 μm to the long wavelength side. The photodetector includes, on an InP substrate, an absorption layer of a type II multiple quantum well structure comprising a repeated structure of a GaAsSb layer and an InGaAs layer, and has sensitivity in the near-infrared region including wavelengths of 1.3 μm and 2.0 μm. The ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6. 1. A photodetector which includes , on a group III-V semiconductor substrate , an absorption layer of a type II multiple quantum well (MQW) structure comprising a repeated structure of a first compound semiconductor and a second compound semiconductor , and has sensitivity in a near-infrared region including wavelengths of 1.3 μm and 2.0 μm , whereina ratio of the sensitivity at the wavelength of 1.3 μm to the sensitivity at the wavelength of 2.0 μm is not smaller than 0.5 but not larger than 1.6.2. The photodetector according to claim 1 , having a structure in which incident light enters the photodetector from the substrate side.3. The photodetector according to claim 1 , wherein a total thickness of the MQW structure is not smaller than 0.5 μm but not larger than 3.5 μm.4. The photodetector according to claim 1 , wherein a thickness of the first compound semiconductor and a thickness of the second compound semiconductor are both not smaller than 0.75 nm but not larger than 5 nm.5. The photodetector according to claim 1 , wherein the substrate comprises InP claim 1 , and the MQW structure comprises a repeated structure of InGaAs (0.38≦x≦0.68) and GaAsSb(0.36≦y≦0.62).6. The photodetector according to claim 5 , wherein an InP window layer is provided at a front surface of InP-based epitaxial layers including the MQW ...

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Номер записи: 3
02-05-2013 дата публикации

FOUR JUNCTION SOLAR CELL

Номер: US20130104970A1
Автор: BHATTACHARYA Indranil, Foo Simon Y.
Принадлежит: FLORIDA STATE UNIVERSITY RESEARCH FOUNDATION, INC.

A four-junction solar cell including a first layer comprised of AlGaInP, a second layer comprised of InGaAs, a third layer comprised of GaSb, a fourth layer comprised of InGaSb, a first tunnel junction disposed between the first and second layers, a second tunnel junction disposed between the second and third layers, and a third tunnel junction disposed between the third and fourth layers. Alternately, the four-junction solar cell includes AlGaInP as the top layer, InGaP as the second layer, InGaAs as the third layer and InGaSb as the bottom layer. Tunnel junctions are disposed in between each layer. An alternate solar cell design includes AlGaInP/GaAs/InGaAs/InGaSb layers. 1. A solar cell comprising:a first layer comprised of AlGaInP;a second layer comprised of InGaAs;a third layer comprised of GaSb;a fourth layer comprised of InGaSb;a first tunnel junction disposed between the first and second layers;a second tunnel junction disposed between the second and third layers; anda third tunnel junction disposed between the third and fourth layers.2. The solar cell of claim 1 , further comprising an antireflective coating situated on top of the first layer claim 1 , the antireflective coating comprising one or another of MgO+TiOand InO+SnO.3. The solar cell of claim 1 , wherein the first layer comprises:{'sup': '+', 'an n AlGaInP emitter;'}a p-type AlGaInP base; and{'sup': '+', 'a p type AlGaInP back-surface-field layer.'}4. The solar cell of claim 1 , wherein the second layer comprises:{'sup': '+', 'an n InGaAs emitter;'}a p-type InGaAs base; anda back-surface-field layer.5. The solar cell of claim 1 , wherein the third layer comprises:{'sup': '+', 'an n GaSb emitter;'}a p-type GaSb base; and{'sup': '+', 'a p type GaSb back-surface-field layer.'}6. The solar cell of claim 1 , wherein the fourth layer comprises:{'sup': '+', 'an n InGaSb emitter;'}an InGaSb base; anda p-type InGaSb substrate layer, the emitter and the base being formed on the substrate layer.7. The solar ...

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Номер записи: 4
09-05-2013 дата публикации

LOW-BANDGAP, MONOLITHIC, MULTI-BANDGAP, OPTOELECTRONIC DEVICES

Номер: US20130112244A1
Автор: CARAPELLA Jeffrey J., WANLASS Mark W.
Принадлежит: ALLIANCE FOR SUSTAINABLE ENERGY, LLC

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells () including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate () by use of at least one graded lattice constant transition layer () of InAsP positioned somewhere between the InP substrate () and the LMM subcell(s) (). These devices are monofacial () or bifacial () and include monolithic, integrated, modules (MIMs) () with a plurality of voltage-matched subcell circuits () as well as other variations and embodiments. 1. A monolithic , multi-bandgap , photovoltaic converter , comprising:a first subcell comprising GaInAs(P) with a first bandgap and a first lattice constant;{'sub': y', '1-y, 'a second subcell comprising GaInAs(P) with a second bandgap and a second lattice constant, wherein the second bandgap is less than the first bandgap and the second lattice constant is greater than the first lattice constant, and further, wherein the second lattice constant is equal to a lattice constant of a InAsPalloy with a bandgap greater than the first bandgap; and'}{'sub': y', '1-y, 'a lattice constant transition material positioned between the first subcell and the second subcell, said lattice constant transition material comprising InAsPalloy with a lattice constant that changes gradually from the first lattice constant to the second lattice constant.'}2. The monolithic claim 1 , multi-bandgap claim 1 , photovoltaic converter of claim 1 , wherein the lattice constant transition material is grown epitaxially on the first subcell with a gradually increasing value for y.3. The monolithic claim 1 , multi-bandgap claim 1 , photovoltaic converter of claim 1 , wherein the second subcell is grown epitaxially on the lattice constant transition material.4. The monolithic claim 1 , multi-bandgap claim 1 , photovoltaic converter of claim 1 , wherein the first ...

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Номер записи: 5
20-06-2013 дата публикации

PHOTOVOLTAIC DEVICE

Номер: US20130153013A1
Автор: Archer Melissa J., Gmitter Thomas J., He Gang, Higashi Gregg
Принадлежит: Alta Devices, Inc.

Methods and apparatus are provided for converting electromagnetic radiation, such as solar energy, into electric energy with increased efficiency when compared to conventional solar cells. One embodiment of the present invention provides a photovoltaic (PV) device. The PV device comprises an absorber layer made of a compound semiconductor; and an emitter layer located closer than the absorber layer to a first side of the device. The PV device includes a p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device. Such innovations may allow for greater efficiency and flexibility in PV devices when compared to conventional solar cells. 1. A photovoltaic (PV) device comprising:an absorber layer made of a compound semiconductor;an emitter layer located closer than the absorber layer to a first side of the device; anda p-n junction formed between the emitter layer and the absorber layer, the p-n junction causing a voltage to be generated in the device in response to the device being exposed to light at a second side of the device.2. The photovoltaic (PV) device of wherein the first side of the device is a back side of the device and the second side of the device is a front side of the device.3. The photovoltaic (PV) device of wherein the emitter layer is made of a different material than the absorber layer claim 1 , such that a heterojunction is formed between the emitter layer and the absorber layer.4. The photovoltaic (PV) device of wherein the emitter layer has a larger bandgap than the absorber layer.5. The photovoltaic (PV) device of wherein an intermediate layer or layers is located between the absorber layer and the emitter layer.6. The photovoltaic (PV) device of wherein the intermediate layer or layers provides an offset between the p-n junction and the semiconductor heterojunction.7. The photovoltaic (PV) ...

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Номер записи: 6
11-07-2013 дата публикации

SINGLE-JUNCTION PHOTOVOLTAIC CELL

Номер: US20130174909A1
Автор: Bedell Stephen W., Fogel Keith E., Sadana Devendra, Shahrjerdi Davood, Sosa Cortes Norma E., Wacaser Brent A.
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A single-junction photovoltaic cell includes a doped layer comprising a dopant diffused into a semiconductor substrate; a patterned conducting layer formed on the doped layer; a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; and an ohmic contact layer formed on the semiconductor layer. 1. A single-junction photovoltaic cell , comprising:a doped layer comprising a dopant diffused into a semiconductor substrate;a patterned conducting layer formed on the doped layer;a semiconductor layer comprising the semiconductor substrate located on the doped layer on a surface of the doped layer opposite the patterned conducting layer; andan ohmic contact layer formed on the semiconductor layer.2. The single junction photovoltaic cell of claim 1 , wherein the dopant comprises zinc.3. The single junction photovoltaic cell of claim 1 , further comprising a handling substrate layer located over the ohmic contact layer claim 1 , the handling substrate comprising a conductive material comprising one of a metallic foil claim 1 , glass claim 1 , or ceramic material.4. The single junction photovoltaic cell of claim 1 , wherein the semiconductor substrate comprises gallium arsenide (GaAs) having a <110> surface crystallization orientation.5. The single junction photovoltaic cell of claim 1 , wherein the semiconductor layer is under a compressive strain.6. The single junction photovoltaic cell of claim 1 , wherein the semiconductor layer is less than about 50 microns thick. This application is a divisional of U.S. application Ser. No. 12/713,572, filed on Feb. 26, 2010, which is herein incorporated by reference in its entirety.The present invention is directed to semiconductor substrate fabrication using stress-induced substrate spalling.Cost constraints tend to exclude the use of compound semiconductor substrates for all but the most demanding photovoltaic (PV) applications, such ...

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Номер записи: 7
25-07-2013 дата публикации

Apparatus And Method For Hybrid Photovoltaic Device Having Multiple, Stacked, Heterogeneous, Semiconductor Junctions

Номер: US20130189809A1
Автор: Armstrong Joseph H., Woods Lawrence M.
Принадлежит: Ascent Solar Technologied, Inc.

A photovoltaic (PV) device has at least one lower PV cell on a substrate, the cell having a metallic back contact, and a I-III-VI absorber, and a transparent conductor layer. An upper PV cell is adhered to the lower PV cell, electrically in series to form a stack. The upper PV cell has III-V absorber and junction layers, the cells are adhered by transparent conductive adhesive having filler of conductive nanostructures or low temperature solder. The upper PV cell has no substrate. An embodiment has at least one shape of patterned conductor making contact to both a top of the upper and a back contact of the lower cells to couple them together in series. In an embodiment, a shape of patterned conductor draws current from excess area of the lower cell to the upper cell, in an alternative embodiment shapes of patterned conductor couples I-III-VI cells not underlying upper cells in series strings, a string being in parallel with at least one stack. In an embodiment, the bonding agent is a polymeric adhesive containing conductive nanostructures. In an embodiment the III-V absorber is grown on single crystal, substrate. A method for forming the device is described. 1. A method of manufacturing a photovoltaic (PV) device comprising:fabricating PV cell layers including a I-III-VI solar absorber layer on a flexible substrate, and subdividing the PV cell layers into a first and a third PV cell on the flexible substrate;fabricating a second and fourth PV cell having a III-V solar absorber layer having a first bandgap, the second and fourth PV cell being fabricated on crystalline substrates, the crystalline substrate seeding crystal growth in the second and fourth PV cells;removing the crystalline substrates from the second and fourth PV cell;bonding the second PV cell above the first PV cell to form a first stack, the first and second PV cells being electrically coupled in series and positioned such that at least some incident light not absorbed by the second PV cell can reach ...

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Номер записи: 8
22-08-2013 дата публикации

AXIALLY-INTEGRATED EPITAXIALLY-GROWN TANDEM WIRE ARRAYS

Номер: US20130213462A1
Автор: Hu Shu, Lewis Nathan S.
Принадлежит: California Institute of Technology

A photoelectrode, methods of making and using, including systems for water-splitting are provided. The photoelectrode can be a semiconducting material having a photocatalyst such as nickel or nickel-molybdenum coated on the material. The photoelectrode includes an elongated axially integrated wire having at least two different wire compositions. 1. A nano- or micro-wire comprising a plurality of axial-integrated epitaxially-grown tandem wires comprising at least a first junction comprising a first semiconducting material and at least a second junction comprising a different semiconducting material.2. The nano- or micro-wire of claim 1 , wherein the at least first junction and at least second junction are separated by an ohmic layer.3. The nano- or micro-wire of claim 1 , wherein the ohmic layer and at least second layer comprise a semiconducting material each individually selected from the group consisting of TiO claim 1 , CaTiO claim 1 , SrTiO claim 1 , SrTiO claim 1 , SrTiO claim 1 , RbLaTiO claim 1 , CsLaTiO claim 1 , CsLaTiNbO claim 1 , LaTiO claim 1 , LaTiO claim 1 , LaTiO claim 1 , LaTiO:Ba claim 1 , KaLaZrTiO claim 1 , LaCaTiO claim 1 , KTiNbO claim 1 , NaTiO claim 1 , BaTiO claim 1 , GdTiO claim 1 , YTiO claim 1 , ZrO claim 1 , KNbO claim 1 , RbNbO claim 1 , CaNbO claim 1 , SrNbO claim 1 , BaNbO claim 1 , NaCaNbO claim 1 , ZnNbO claim 1 , CsNbO claim 1 , LaNbO claim 1 , TaO claim 1 , KsPrTaO claim 1 , KTaSiO claim 1 , KTaBO claim 1 , LiTaO claim 1 , KTaO claim 1 , AgTaO claim 1 , KTaO:Zr claim 1 , NaTaO:La claim 1 , NaTaO:Sr claim 1 , NaTaO claim 1 , CaTaO claim 1 , SrTaO claim 1 , NiTaO claim 1 , RbTaO claim 1 , CaTaO claim 1 , SrTaO.KSrTaO claim 1 , RbNdTaO claim 1 , HLaTaO claim 1 , KSrTaO claim 1 , LiCaTaO claim 1 , KBaTaO claim 1 , SrTaO claim 1 , BaTaO claim 1 , HSrBiTaO claim 1 , Mg—Ta Oxide claim 1 , LaTaO claim 1 , LaTaO claim 1 , PbWO claim 1 , RbWNbO claim 1 , RbWTaO claim 1 , CeO:Sr claim 1 , BaCeO claim 1 , NaInO claim 1 , CaInO claim 1 , SrInO ...

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Номер записи: 9
29-08-2013 дата публикации

High Efficiency Flexible Solar Cells For Consumer Electronics

Номер: US20130220408A1
Автор: Bedell Stephen W., Hekmatshoartabari Bahman, Sadana Devendra K., Shahidi Ghavam G., Shahrjerdi Davood
Принадлежит: INTERNATIONAL BUSINESS MACHINES CORPORATION

A flexible solar cell comprises an epitaxially grown III-V layer having a first layer grown on a base substrate, at least one intermediate layer grown on the first layer, and a cap layer grown on the at least one intermediate layer, the III-V layer being separated from the base substrate by controllably spalling the first layer from the base substrate; and a flexible substrate coupled to the epitaxially grown III-V layer. The flexible solar cell may be used to provide power to an electronic device. 1. A structure , comprising:an epitaxially grown layer of semiconductor material controllably spalled from a base substrate; anda flexible substrate coupled to the epitaxially grown layer of semiconductor material.2. The structure of claim 1 , wherein the epitaxially grown layer of semiconductor material is an III-V layer comprising a first sub cell claim 1 , an intermediate sub cell on the first sub cell claim 1 , and a cap sub cell on the intermediate sub cell.3. The structure of claim 2 , wherein the epitaxially grown layer of semiconductor material defines an inverted solar cell structure having one or more junctions.4. The structure of claim 2 , wherein the epitaxially grown layer of semiconductor material defines an inverted metamorphic structure having one or more junctions.5. The structure of claim 1 , further comprising a dielectric layer disposed between the epitaxially grown layer of semiconductor material and the flexible substrate.6. The structure of claim 5 , further comprising one or more of a semi-insulating layer and a reflector layer disposed between the epitaxially grown layer of semiconductor material and the dielectric layer.7. The structure of claim 5 , further comprising a stressor layer disposed between the dielectric layer and the flexible substrate.8. A structure claim 5 , comprising:an epitaxially grown III-V layer comprising a first sub cell grown on a base substrate, at least one intermediate sub cell grown on the first sub cell, and a cap sub ...

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Номер записи: 10
29-08-2013 дата публикации

LATTICE MATCHABLE ALLOY FOR SOLAR CELLS

Номер: US20130220409A1
Автор: Jones-Albertus Rebecca Elizabeth, Liu Ting, Misra Pranob, YUEN HOMAN BERNARD
Принадлежит: Solar Junction Corporation

An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, GaInNAsSbwith a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for GaInNAsSbare 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03. 19-. (canceled)10. A multijunction solar cell comprising:{'sub': 1−x', 'x', 'y', '1-y-z', 'z, 'at least one subcell comprising GaInNAsSb, the at least one subcell having a low antimony (Sb) content, enhanced indium (In) content, and enhanced nitrogen (N) content, wherein the content levels are selected to achieve a bandgap of at least 0.9 eV, wherein the content values for x, y, and z are within compositions ranges as follows: 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03, wherein low corresponds to the content value for z and enhanced corresponds to the content value for x and for y.'}11. The multijunction solar cell according to claim 10 , further comprising a substrate claim 10 , and wherein the at least one GaInNAsSbsubcell is substantially lattice matched to the substrate.12. The multijunction solar cell according to claim 11 , wherein the substrate is selected from the group consisting of GaAs and Ge.13. The multijunction solar cell according to claim 10 , further comprising at least one additional subcell that is substantially lattice matched to the at least one GaInNAsSbsubcell.14. The multijunction solar cell according to claim 11 , wherein the at least one GaInNAsSbsubcell has a lattice constant that is within 0.5% of the lattice constant of the substrate.15. The multijunction solar cell according to claim 10 , wherein the at least one GaInNAsSbsubcell is configured to produce an open circuit voltage of at least 0.3 V under illumination of the multijunction solar ...

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Номер записи: 11
19-09-2013 дата публикации

SEMICONDUCTOR DEVICE AND RECEIVER

Номер: US20130240835A1
Автор: TAKAHASHI Tsuyoshi
Принадлежит:

A semiconductor device includes a p-type semiconductor layer, an n-type semiconductor layer, a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other, and a multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction. Upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion. 1. A semiconductor device , comprising:a p-type semiconductor layer;an n-type semiconductor layer;a pn junction portion at which the p-type semiconductor layer and the n-type semiconductor layer are joined to each other; anda multiple quantum barrier structure or a multiple quantum well structure that is provided in at least one of the p-type semiconductor layer and the n-type semiconductor layer and functions as a barrier against at least one of electrons and holes upon biasing in a forward direction; wherein,upon biasing in a reverse direction, a portion that allows band-to-band tunneling of electrons is formed at the pn junction portion.2. The semiconductor device according to claim 1 , wherein the multiple quantum barrier structure or the multiple quantum well structure is provided in the p-type semiconductor layer;the p-type semiconductor layer and the n-type semiconductor layer are joined, at the pn junction portion, to each other in such a manner as to sandwich therebetween one barrier layer included in the multiple quantum barrier structure or one well layer included in the multiple quantum well structure; andthe portion that allows band-to-band tunneling of electros is formed at the pn junction portion upon biasing in the reverse direction from the one barrier layer or the one well layer and the n-type semiconductor layer, or from ...

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Номер записи: 12
19-09-2013 дата публикации

ROOM TEMPERATURE NANOWIRE IR, VISIBLE AND UV PHOTODETECTORS

Номер: US20130240837A1
Автор: Agnihotri Pratik, Bandyopadhyay Saumil, Bandyopadhyay Supriyo
Принадлежит:

Room temperature IR and UV photodetectors are provided by electrochemical self-assembly of nanowires. The detectivity of such IR detectors is up to ten times better than the state of the art. Broad peaks are observed in the room temperature absorption spectra of 10-nm diameter nanowires of CdSe and ZnS at photon energies close to the bandgap energy, indicating that the detectors are frequency selective and preferably detect light of specific frequencies. Provided is a photodetector comprising: an aluminum substrate; a layer of insulator disposed on the aluminum substrate and comprising an array of columnar pores; a plurality of semiconductor nanowires disposed within the pores and standing vertically relative to the aluminum substrate; a layer of nickel disposed in operable communication with one or more of the semiconductor nanowires; and wire leads in operable communication with the aluminum substrate and the layer of nickel for connection with an electrical circuit. 1. A photodetector comprising:an array of semiconductor nanowires either standing vertically on a conducting substrate and capped by a conductor transparent to light, or lying horizontally on a non-conducting substrate and capped by conductors at both ends; andwire leads attached to the conductors and conducting substrate for connection to an electrical circuit.2. The photodetector of claim 1 , wherein the semiconductor nanowires have a diameter of from 5-50 nm.3. The photodetector of claim 1 , wherein the semiconductor nanowires comprise any direct bandgap semiconductor of bandgap energy between 0.3 eV and 4 eV or direct bandgap insulator of bandgap between 4 and 10 eV.4. The photodetector of claim 1 , wherein the nanowires are fabricated by self-assembly claim 1 , or nanolithography claim 1 , or combinations thereof.5. The photodetector of claim 1 , wherein an insulating layer is disposed between the semiconductor nanowires and one of the conductors or the conducting substrate at one end.6. The ...

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Номер записи: 13
17-10-2013 дата публикации

CORE-SHELL NANOSTRUCTURE BASED PHOTOVOLTAIC CELLS AND METHODS OF MAKING SAME

Номер: US20130269762A1
Автор: Cui Jingbiao
Принадлежит: BOARD OF TRUSTEES OF THE UNIVERSITY OF ARKANSAS

A photovoltaic cell includes nanostructures formed of nanowires on a substrate, where the nanostructures include an array of three dimensional nanotrees or nanobushes with a core-shell structure having a core and one or more shells sequentially formed on the core. The core o f the core-shell structure is formed of a highly conductive metal or semiconductor, and the shell o f the core-shell structure is formed of a metal, semiconductor, or polymer, such that the core-shell structure has substantially large surface and interface area for photon energy harvesting and conversion into electricity. 1. A photovoltaic (PV) cell , comprising:nanostructures formed of nanowires on a substrate.2. The photovoltaic cell of claim 1 , wherein the nanostructures comprise three dimensional (3D) nanotrees or nanobushes.3. The photovoltaic cell of claim 2 , wherein each nanotree or nanobush has a plurality of branches and a plurality of subbranches grown from the plurality of braches.4. The photovoltaic cell of claim 3 , wherein each nanotree or nanobush has one or more trunks from which the plurality of branches grows.5. The photovoltaic cell of claim 4 , wherein all the one or more trunks claim 4 , the plurality of branches and the plurality of subbranches are formed with a core-shell structure.6. The photovoltaic cell of claim 5 , wherein the core-shell structure comprises a core and a shell formed on and covering the core.7. The photovoltaic cell of claim 6 , wherein the diameter of the core of the core-shell structure is around tens to hundreds nanometers claim 6 , and the thickness of the shell of the core-shell structure is about from a few nanometers to hundred nanometers.8. The photovoltaic cell of claim 6 , wherein the core and shell of the core-shell structure are formed of the same or different semiconductor or metal materials.9. The photovoltaic cell of claim 8 , wherein the core o f the core-shell structure is formed of a highly conductive metal or semiconductor claim 8 , ...

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Номер записи: 14
14-11-2013 дата публикации

SUPERLATTICE QUANTUM WELL INFRARED DETECTOR

Номер: US20130299781A1
Автор: Kryskowski David
Принадлежит: UD HOLDINGS, LLC

In at least one embodiment, an infrared (IR) sensor comprising a thermopile is provided. The thermopile comprises a substrate and an absorber. The absorber is positioned above the substrate and a gap is formed between the absorber and the substrate. The absorber receives IR from a scene and generates an electrical output indicative of a temperature of the scene. The absorber is formed of a super lattice quantum well structure such that the absorber is thermally isolated from the substrate. In another embodiment, a method for forming an infrared (IR) detector is provided. The method comprises forming a substrate and forming an absorber with a plurality of alternating first and second layers with a super lattice quantum well structure. The method further comprises positioning the absorber about the substrate such that a gap is formed to cause the absorber to be suspended about the substrate. 1. An infrared (IR) sensor comprising: a substrate; and', 'an absorber being positioned above the substrate and forming a gap thereof, the absorber for receiving IR from a scene and for generating an electrical output indicative of a temperature of the scene, the absorber being formed of a superlattice quantum well structure such that the absorber is thermally isolated from the substrate., 'a thermopile including2. The sensor of wherein the superlattice quantum well structure includes a plurality of alternating first layers and second layers.3. The sensor of wherein a total number of the plurality of alternating first layers and second layers are 8 to 10 layers.4. The sensor of wherein each of the first layers comprise silicon and each of the second layers comprise silicon germanium.5. The sensor of further comprising a first encapsulating layer and a second encapsulating layer claim 2 , the plurality of alternating first and second layers being positioned between the first encapsulation layer and the second encapsulation layer for supporting the absorber over the gap.6. The ...

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Номер записи: 15
19-12-2013 дата публикации

LIGHT RECEIVING ELEMENT AND OPTICAL DEVICE

Номер: US20130334492A1
Автор: Iguchi Yasuhiro, Inada Hiroshi
Принадлежит: Sumitomo Electric Industries, Ltd.

A light-receiving element includes a III-V group compound semiconductor substrate, a light-receiving layer having a type II multi-quantum well structure disposed on the substrate, and a type I wavelength region reduction means for reducing light in a wavelength region of type I absorption in the type II multi-quantum well structure disposed on a light incident surface or between the light incident surface and the light-receiving layer. 1. A light-receiving element , comprising: a III-V group compound semiconductor substrate; a light-receiving layer having a type II multi-quantum well structure disposed on the substrate; anda type I wavelength region reduction means for greatly reducing light in a wavelength region of type I absorption (a type I wavelength region) in the type II multi-quantum well structure as compared with light in a long-wavelength region, wherein the type I wavelength region reduction means is closer to a light incident surface than the light-receiving layer.2. The light-receiving element according to claim 1 , wherein the type I wavelength region reduction means is an epitaxial semiconductor absorption layer for absorbing light in the type I wavelength region.3. The light-receiving element according to claim 2 , wherein the absorption layer is separated from the light-receiving layer by 50% or more of the hole diffusion length.4. The light-receiving element according to claim 2 , wherein the absorption layer is an InGaAs or InGaAsP layer.5. The light-receiving element according to claim 2 , further comprising a hole-extinguishing layer between the absorption layer and the light-receiving layer claim 2 , wherein the absorption layer is disposed between the substrate and the light-receiving layer claim 2 , and the hole-extinguishing layer has a thickness of 50% or more of the hole diffusion length and contains a III-V group compound semiconductor.6. The light-receiving element according to claim 5 , wherein the hole-extinguishing layer includes an ...

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Номер записи: 16
19-12-2013 дата публикации

Optically Controlled Power Devices

Номер: US20130334537A1
Автор: Heikki I. Helava, Randy D. Curry
Принадлежит: Helava Systems Inc, University of Missouri System

An electro-optically triggered power switch is disclosed utilizing a wide bandgap, high purity III-nitride semiconductor material such as BN, AN, GaN, InN and their compounds. The device is electro-optically triggered using a laser diode operating at a wavelength of 10 to 50 nanometers off the material's bandgap, and at a power level of 10 to 100 times less than that required in a conventionally triggered device. The disclosed device may be configured as a high power RF MOSFET, IGBT, FET, or HEMT that can be electro-optically controlled using photons rather than an electrical signal. Electro-optic control lowers the power losses in the semiconductor device, decreases the turn-on time, and simplifies the drive signal requirements. It also allows the power devices to be operated from the millisecond to the sub-picosecond timeframe, thus allowing the power device to be operated at RF frequencies (i.e., kilohertz to terahertz range) and at high temperatures where the bandgap changes with temperature.

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Номер записи: 17
09-01-2014 дата публикации

PHOTODIODE AND METHOD FOR PRODUCING THE SAME

Номер: US20140008614A1
Автор: Akita Katsushi, Fujii Kei, Ishizuka Takashi
Принадлежит: Sumitomo Electric Industries, Ltd.

Provided is, for example, a photodiode in which extension of the sensitivity range to a longer wavelength in the near-infrared region can be achieved without increasing the dark current. A photodiode according to the present invention includes an absorption layer that is positioned on an InP substrate and has a type-II multiple-quantum well structure in which an InGaAs layer and a GaAsSb layer are alternately layered, wherein the InGaAs layer or the GaAsSb layer has a composition gradient in the thickness direction in which the bandgap energy of the InGaAs or the GaAsSb decreases toward the top surface or the bottom surface of the layer. 1. A photodiode containing a III-V compound semiconductor , the photodiode comprising:an absorption layer that is positioned on a III-V compound semiconductor substrate and has a type-II multiple-quantum well structure in which a first semiconductor layer and a second semiconductor layer are alternately layered,wherein the first semiconductor layer has a composition gradient in a thickness direction in which a bandgap energy of the first semiconductor layer decreases toward a top surface or a bottom surface of the first semiconductor layer.2. The photodiode according to claim 1 , wherein the second semiconductor layer has a composition gradient in a thickness direction in which a bandgap energy of the second semiconductor layer decreases toward a surface of the second semiconductor layer claim 1 , the surface being in contact with an end surface of the first semiconductor layer having the gradient in which the bandgap energy of the first semiconductor layer decreases toward the end surface.3. The photodiode according to claim 1 , wherein claim 1 , in at least one semiconductor layer that is selected from the first semiconductor layer and the second semiconductor layer and has the composition gradient claim 1 ,a composition at an end surface at which the bandgap energy is minimized corresponds to a lattice mismatch of more than 0.2% ...

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Номер записи: 18
30-01-2014 дата публикации

Semiconductor Heterostructure and Photovoltaic Cell Including Such A Heterostructure

Номер: US20140026937A1
Автор: Andre Régis, Bleuse Joël, Mariette Henri
Принадлежит:

The invention relates to a heterostructure including a first region (R) made of a first n-doped semiconductor material, a second region (R) made of a second p-doped semiconductor material and, between said first and second regions, a type-II superlattice (SR) made up of an alternation of layers (C C) of a third and fourth semiconductor material, said layers being thin enough for the carriers to be displaced inside said superlattice, forming at least one electron mini-band (MBe) and one hole mini-band (MBh), the interfaces between the first region and the superlattice, between the layers of the superlattice and between the superlattice and the second region being mutually parallel. The invention also relates to a photovoltaic cell including such a heterostructure as an active element. The invention further relates to a solar panel including a combination of such photovoltaic cells. 1. A heterostructure comprising a first region made of an n-doped first semiconductor material , a second region made of a p-doped second semiconductor material , and , between said first and second regions , a superlattice formed by an alternation of layers of a third and a fourth semiconductor material , the interfaces between the first region and the superlattice , between the layers of the superlattice , and between the superlattice and the second region being mutually parallel; characterized in that:{'sub': V4', 'V3', 'C3', 'C3', 'V4', 'C4, 'said layers are thin enough for the carriers to be delocalized inside said superlattice forming at least one electron mini-band (MBe) and one hole mini-band (MBh); in that the upper limit (E) of the valence band of said fourth material is comprised between the upper limit (E) of the valence band and the lower limit (E) of the conduction band of said third material, and the lower limit (E) of the conduction band of said third material is comprised between the upper limit (E) of the valence band and the lower limit (E) of the conduction band of said ...

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Номер записи: 19
06-03-2014 дата публикации

HIGH OPTICAL QUALITY POLYCRYSTALLINE INDIUM PHOSPHIDE GROWN ON METAL SUBSTRATES BY MOCVD

Номер: US20140060646A1
Автор: Javey Ali, Zheng Maxwell
Принадлежит: The Regents of the University of California

A new solar cell is disclosed wherein the solar cell comprises a substrate, a VIB metal thin film deposited on the substrate, and a polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film. 1. A solar cell comprising;a substrate;a VIB metal thin film deposited on the substrate; anda polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film.2. The solar cell of wherein the substrate is a metal.3. The solar cell of wherein the metal substrate is a metal foil.4. The solar cell of wherein the metal substrate is Aluminum (Al).5. The solar cell of wherein the metal substrate is Molybenum (Mo).6. The solar cell of wherein the metal substrate is Tungsten (W).7. The solar cell of wherein the VIB metal thin film is Molybenum (Mo).8. The solar cell of wherein the VIB metal thin film is Tungsten (W).9. The solar cell of wherein the polycrystalline III-V semiconductor thin film is Indium Phosphide (InP).10. The solar cell of wherein the polycrystalline III-V semiconductor thin film is Gallium Arsenide (GaAs).11. The solar cell of wherein polycrystalline III-V semiconductor thin film is deposited utilizing Metal Organic Chemical Vapor Deposition (MOCVD).12. A method of making a solar cell comprising;providing a substrate;depositing a VIB metal thin film deposited on the substrate; anddepositing a polycrystalline III-V semiconductor thin film on the VIB metal thin film.13. The method of wherein the substrate is a metal.14. The method of wherein the metal substrate is a metal foil.15. The method wherein the metal substrate is Aluminum (Al).16. The method of wherein the metal substrate is Molybenum (Mo).17. The method of wherein the metal substrate is Tungsten (W).18. The method of wherein the VIB metal thin film is Molybenum (Mo).19. The method of wherein the VIB metal thin film is Tungsten (W).20. The method of wherein the polycrystalline III-V semiconductor thin film is Indium Phosphide (InP).21. The method of wherein the ...

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Номер записи: 20
06-03-2014 дата публикации

GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER

Номер: US20140061588A1
Автор: Akita Katsushi, Fujii Kei, Ishizuka Takashi, Nagai Youichi
Принадлежит: Sumitomo Electric Industries, Ltd.

An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer grown on the absorption layer contains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer . In the group III-V compound semiconductor photo detector , the InP layer contains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layer generate holes, the silicon contained in the InP layer compensates for the generated carriers. As a result, the second portion of the InP layer has sufficient n-type conductivity. 123.-. (canceled)24. A photo detector comprising:a substrate of group III-V semiconductor;an absorption layer being provided on the substrate;a diffusive-concentration distribution-adjusting layer of group III-V semiconductor being provided in contact with the absorption layer; anda window layer of group III-V semiconductor being provided in contact with the diffusive-concentration distribution-adjusting layer and having a bandgap energy larger than the bandgap energy of the diffusive-concentration distribution-adjusting layer,the absorption layer being disposed between the diffusive-concentration distribution-adjusting layer and the substrate,the diffusive-concentration distribution-adjusting layer being disposed between the absorption layer and the window layer,a semiconductor region being constituted by the window layer and the diffusive-concentration distribution-adjusting layer and having a first region and a second region, the first region and the second region being disposed, in sequence, along a binding surface between the semiconductor region and the absorption layer,the first region containing a predetermined ...

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Номер записи: 21
13-03-2014 дата публикации

MORPHOLOGICAL AND SPATIAL CONTROL OF InP CRYSTAL GROWTH USING CLOSED-SPACED SUBLIMATION

Номер: US20140069499A1
Автор: Javey Ali, Kiriya Daisuke, Zheng Maxwell
Принадлежит: The Regents of the University of California

A new solar cell comprising a substrate, a VIB metal thin film deposited on the substrate, and a polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film. 1. A solar cell comprising;a substrate;a VIB metal thin film deposited on the substrate; anda polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film.2. The solar cell of wherein the substrate is a metal.3. The solar cell of wherein the metal substrate is a metal foil.4. The solar cell of wherein the metal substrate is Aluminum (Al).5. The solar cell of wherein the metal substrate is Molybdenum (Mo).6. The solar cell of wherein the metal substrate is Tungsten (W).7. The solar cell of wherein the VIB metal thin film is Molybdenum (Mo).8. The solar cell of wherein the VIB metal thin film is Tungsten (W).9. The solar cell of wherein the polycrystalline III-V semiconductor thin film is Indium Phosphide (InP).10. The solar cell of wherein the polycrystalline III-V semiconductor thin film is Gallium Arsenide (GaAs).11. The solar cell of wherein polycrystalline III-V semiconductor thin film is deposited utilizing Metal Organic Chemical Vapor Deposition (MOCVD).12. A method of making a solar cell comprising;providing a substrate;depositing a VIB metal thin film deposited on the substrate; anddepositing a polycrystalline III-V semiconductor thin film on the VIB metal thin film.13. The method of wherein the substrate is a metal.14. The method of wherein the metal substrate is a metal foil.15. The method wherein the metal substrate is Aluminum (Al).16. The method of wherein the metal substrate is Molybdenum (Mo).17. The method of wherein the metal substrate is Tungsten (W).18. The method of wherein the VIB metal thin film is Molybdenum (Mo).19. The method of wherein the VIB metal thin film is Tungsten (W).20. The method of wherein the polycrystalline III-V semiconductor thin film is Indium Phosphide (InP).21. The method of wherein the polycrystalline III-V semiconductor ...

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Номер записи: 22
02-01-2020 дата публикации

ENHANCED VISIBLE NEAR-INFRARED PHOTODIODE AND NON-INVASIVE PHYSIOLOGICAL SENSOR

Номер: US20200000340A1
Автор: III William J., MacNeish, Wojtczuk Steven J., ZHANG Xuebing
Принадлежит:

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode. 120-. (canceled)21. A physiological sensor for measuring physiological parameters of a monitored patient , the physiological sensor comprising:a sensor housing;an emitter configured to emit optical radiation at one or more wavelengths; andone or more detectors configured to be positioned proximate to the emitter and tissue of a patient by the sensor housing, the one or more detectors comprising a semiconductor device configured to detect the optical radiation after attenuation by the tissue and generate a detector signal responsive to the detected optical radiation,wherein the semiconductor device comprises a window layer, a diffusion region, an absorption region, and a semiconductor wafer, the absorption region being between the window layer and the semiconductor wafer, andwherein the window layer has a thickness ranging from about 25 nm to about 150 nm, the diffusion region being a p-type region, the absorption region being an undoped region or a n-type region, the semiconductor wafer being the n-type region.22. The physiological sensor of claim 21 , wherein the absorption region is adjacent to the semiconductor wafer.23. The physiological sensor of claim 21 , wherein the window layer and the diffusion region are configured to receive the optical ...

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Номер записи: 23
02-01-2020 дата публикации

DETECTOR FOR AN OPTICAL DETECTION OF AT LEAST ONE OBJECT

Номер: US20200003899A1
Автор: BONSIGNORE Christian, Bruder Ingmar, HANDRECK Anke, LUNGENSCHMIED Christoph, Send Robert
Принадлежит: trinamiX GmbH

A detector for optical detection of at least one object, the detector including: at least one optical sensor including at least one sensor region. The optical sensor is configured to generate at least one sensor signal dependent on an illumination of the sensor region by an incident modulated light beam. The sensor signal is dependent on a modulation frequency of the light beam. The sensor region includes at least one capacitive device including at least two electrodes. At least one insulating layer and at least one photosensitive layer are embedded between the electrodes, wherein at least one of the electrodes is at least partially optically transparent for the light beam. The detector further includes at least one evaluation device configured to generate at least one item of information on a position of the object by evaluating the sensor signal. 120-. (canceled)21. A detector for optically detecting at least one object , comprising:at least one optical sensor comprising at least one sensor region, wherein the optical sensor is configured to generate at least one sensor signal dependent on an illumination of the sensor region by an incident modulated light beam, wherein the sensor signal is dependent on a modulation frequency of the light beam, wherein the sensor region comprises at least one capacitive device, the capacitive device comprising at least two electrodes, wherein at least one insulating layer and at least one photosensitive layer are embedded between the electrodes, wherein at least one of the electrodes is at least partially optically transparent for the light beam; andat least one evaluation device configured to generate at least one item of information on a position of the object by evaluating the sensor signal.22. The detector according to claim 21 , wherein the optical sensor is selected from:at least one longitudinal optical sensor configured to generate at least one longitudinal sensor signal, wherein the longitudinal sensor signal, given same ...

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Номер записи: 24
07-01-2016 дата публикации

INTERBAND CASCADE DEVICES

Номер: US20160005895A1
Автор: Yang Rui Q.
Принадлежит:

Photovoltaic (PV) and photodetector (PD) devices, comprising a plurality of interband cascade (IC) stages, wherein the IC stages comprise an absorption region with a type-I superlattice and/or a bulk semiconductor material having a band gap, the absorption region configured to absorb photons, an intraband transport region configured to act as a hole barrier, and an interband tunneling region configured to act as an electron barrier, wherein the absorption region, the intraband transport region, and the interband tunneling region are positioned such that electrons will flow from the absorption region to the intraband transport region to the interband tunneling region. 1. An interband cascade (IC) device , comprising: a conduction band and a valence band;', 'an absorption region comprising at least one of a Type-I superlattice and a direct band gap semiconductor bulk material with a first band gap, the absorption region configured to absorb photons;', 'an intraband transport region configured to act as a hole barrier and coupled to the absorption region, wherein the intraband transport region has a second band gap that is greater than the first band gap; and', 'an interband tunneling region configured to act as an electron barrier and coupled to the absorption region, wherein the interband tunneling region has a third band gap that is greater than the first band gap, and wherein the interband tunneling region is coupled to an adjacent intraband transport region of an adjacent IC stage via a type II heterointerface,, 'a plurality of IC stages, wherein at least one of the IC stages compriseswherein the absorption region is positioned between the intraband transport region and the interband tunneling region; electrons in the conduction band flow from the absorption region to the intraband transport region in a first direction away from the interband tunneling region,', 'the interband tunneling region suppresses the electrons from flowing in a second direction opposite ...

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Номер записи: 25
04-01-2018 дата публикации

ARRAY OF OPTOELECTRONIC STRUCTURES AND FABRICATION THEREOF

Номер: US20180006069A1
Автор: BORG MATTIAS B., Czornomaz Lukas, Deshpande Veeresh V., DJARA Vladimir, Riel Heike E., Schmid Heinz
Принадлежит:

A method of fabrication of an array of optoelectronic structures. The method first provides a crystalline substrate having cells corresponding to individual optoelectronic structures to be obtained. Each of the cells comprises an opening to the substrate. Then, several first layer portions of a first compound semiconductor material are grown in each the opening to at least partly fill a respective one of the cells and form an essentially planar film portion therein. Next, several second layer portions of a second compound semiconductor material are grown over the first layer portions that coalesce to form a coalescent film extending over the first layer portions. Finally, excess portions of materials are removed, to obtain the array of optoelectronic structures. Each optoelectronic structure comprises a stack protruding from the substrate of: a residual portion of one of the second layer portions; and a residual portion of one of the first layer portions. 1. A method of fabrication of an array of optoelectronic structures , comprising:providing a crystalline substrate with a template structure thereon, wherein the template structure comprises cells corresponding to individual optoelectronic structures to be obtained, each of the cells comprising an opening to the substrate;growing several first layer portions of a first compound semiconductor material from seeds in each said opening, for each of said first layer portions to a least partly fill a respective one of the cells and form an essentially planar film portion therein;growing several, second layer portions of a second compound semiconductor material over said first layer portions, for neighboring ones of said second layer portions to coalesce and thereby form a coalescent film extending over said first layer portions; andremoving excess portions of materials extending over one or more portions of the substrate corresponding to lateral boundaries of the cells, wherein each of the optoelectronic structures ...

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Номер записи: 26
04-01-2018 дата публикации

SEMICONDUCTOR BULK STRUCTURE AND OPTICAL DEVICE

Номер: US20180006175A1
Автор: Ohfuchi Mari
Принадлежит: FUJITSU LIMITED

A semiconductor bulk structure includes a bulk structure including a portion where two layers of GeSe and one layer of WSare alternately laminated. 1. A semiconductor bulk structure comprising:{'sub': '2', 'a bulk structure including a portion where two layers of GeSe and one layer of WSare alternately laminated.'}2. The semiconductor bulk structure according to claim 1 , wherein the bulk structure has a structure in which two layers of GeSe and one layer of WSare alternately laminated over the entire bulk structure in a thickness direction.3. The semiconductor bulk structure according to claim 1 , wherein the bulk structure includes the portion where two layers of GeSe and one layer of WSare alternately laminated claim 1 , and another layer of GeSe or another layer of WSwhich is laminated on a top or bottom side of the portion in a thickness direction.4. The semiconductor bulk structure according to claim 1 , wherein the semiconductor bulk structure has a band gap corresponding to a near infrared region.5. An optical device comprising:{'sub': '2', 'a semiconductor bulk structure having a bulk structure including a portion where two layers of GeSe and one layer of WSare alternately laminated.'}6. The optical device according to claim 5 , wherein the bulk structure has a structure in which two layers of GeSe and one layer of WSare alternately laminated over the entire bulk structure in a thickness direction.7. The optical device according to claim 5 , wherein the bulk structure includes the portion where two layers of GeSe and one layer of WSare alternately laminated claim 5 , and another GeSe or another WSlaminated on a top or bottom side the portion in a thickness direction.8. The optical device according to claim 5 , wherein the semiconductor bulk structure has a band gap corresponding to a near infrared region.9. The optical device according to claim 5 , wherein the semiconductor bulk structure includes a p type region and an n type region.10. The optical device ...

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Номер записи: 27
07-01-2021 дата публикации

SUPERLATTICE PHOTO DETECTOR

Номер: US20210005763A1
Автор: Lin He, Pendharkar Sameer
Принадлежит: TEXAS INSTRUMENTS INCORPORATED

A photo detector includes a superlattice with an undoped first semiconductor layer including undoped intrinsic semiconductor material, a doped second semiconductor layer having a first conductivity type on the first semiconductor layer, an undoped third semiconductor layer including undoped intrinsic semiconductor material on the second semiconductor layer, and a fourth semiconductor layer having a second opposite conductivity type on the third semiconductor layer, along with a first contact having the first conductivity type in the first, second, third, and fourth semiconductor layers, and a second contact having the second conductivity type and spaced apart from the first contact in the first, second, third, and fourth semiconductor layers. An optical shield on a second shielded portion of a top surface of the fourth semiconductor layer establishes electron and hole lakes. A packaging structure includes an opening that allows light to enter an exposed first portion of the top surface of the fourth semiconductor layer. 1. A photo detector , comprising: a first semiconductor layer, the first semiconductor layer including undoped intrinsic semiconductor material,', 'a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a first conductivity type,', 'a third semiconductor layer on the second semiconductor layer, the third semiconductor layer including undoped intrinsic semiconductor material, and', 'a fourth semiconductor layer on the third semiconductor layer, the fourth semiconductor layer having a second opposite conductivity type;, 'a superlattice, includinga first contact extending through the first, second, third, and fourth semiconductor layers, the first contact having the first conductivity type; anda second contact extending through the first, second, third, and fourth semiconductor layers, the second contact spaced apart from the first contact, and having the second conductivity type.2. The photo detector of ...

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Номер записи: 28
02-01-2020 дата публикации

THIN-FILM THERMOPHOTOVOLTAIC CELLS

Номер: US20200007069A1
Автор: Burger Tobias Eugene, Fan Deiju, Forrest Stephen R., Lee Kyusang, Lenert Andrej
Принадлежит:

Thermophotovoltaic (TPV) systems and devices with improved efficiencies are disclosed herein. In one example, a thermophotovoltaic (TPV) cell includes an active layer; a back-surface reflective (BSR) layer; and a spacer layer positioned between the active layer and back-surface reflective layer. 1. A thermophotovoltaic (TPV) cell comprising:an active layer comprising indium gallium arsenide and no antimonide or only trace levels of antimonide;a back-surface reflective (BSR) layer; anda spacer layer positioned between the active layer and back-surface reflective layer.2. The TPV cell of claim 1 , further comprising:an anti-reflective coating (ARC) layer,wherein the active layer is positioned between the ARC layer and the spacer layer.3. The TPV cell of claim 2 , wherein the ARC layer comprises a plurality of layers.4. The TPV cell of claim 3 , wherein a first layer of the plurality of layers comprises magnesium fluoride claim 3 , and a second layer of the plurality of layers comprises zinc selenide.5. The TPV cell of claim 1 , wherein the BSR layer comprises gold.6. The TPV cell of claim 1 , wherein the spacer layer comprises magnesium fluoride.7. The TPV cell of claim 1 , wherein a thickness of the spacer layer is in a range of 0.01-1 micrometers.8. The TPV cell of claim 1 , wherein a thickness of the active layer is in a range of 0.01-10 micrometers.9. The TPV cell of claim 1 , further comprising:an adhesive layer configured to adhere the BSR layer to a substrate.10. The TPV cell of claim 9 , wherein the adhesive layer comprises iridium claim 9 , platinum or titanium.11. The TPV cell of claim 1 , wherein the TPV cell has a sub-bandgap reflectance of at least 90%.12. The TPV cell of claim 1 , wherein the TPV cell has a conversion efficiency of at least 45%.13. The TPV cell of claim 1 , wherein the TPV cell has a conversion efficiency of at least 50%.14. A thermophotovoltaic (TPV) cell comprising:an active layer;a back-surface reflective (BSR) layer; anda spacer ...

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Номер записи: 29
12-01-2017 дата публикации

DUAL MODE III-V SUPERLATTICE AVALANCHE PHOTODIODE

Номер: US20170012162A1
Автор: Ghosh Siddhartha
Принадлежит: Raytheon Company

In one aspect, an avalanche photodiode, includes an absorber, a first superlattice structure directly connected to the absorber and configured to multiply holes and a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons. The first and second superlattice structures include III-V semiconductor material. The avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode. In another aspect, a method includes fabricating the avalanche diode. 1. An avalanche photodiode , comprising:an absorber;a first superlattice structure directly connected to the absorber and configured to multiply holes, the first superlattice structure comprising III-V semiconductor material;a second superlattice structure directly connected to the first superlattice structure and configured to multiply electrons, the second superlattice structure comprising III-V semiconductor material;wherein the avalanche photodiode is a dual mode device configured to operate in either a linear mode or a Geiger mode.2. The avalanche photodiode of claim 1 , wherein the first and second superlattice structures are each a type II strain layer superlattice.3. The avalanche photodiode of claim 1 , wherein the absorber is a p-type absorber.4. The avalanche photodiode of claim 1 , wherein the first superlattice structure comprises:layers of indium arsenide (InAs);layers of indium gallium antimonide (InGaSb);layers of aluminum antimonide (AlSb); andlayers of gallium antimonide (GaSb).5. The avalanche photodiode of claim 4 , wherein each layer of indium arsenide (InAs) is about 0.8 nanometers thick claim 4 , each layer of indium gallium antimonide (InGaSb) is about 1.9 nanometers thick claim 4 , each layer of aluminum antimonide (AlSb) is about 0.3 nanometers thick and each layer of gallium antimonide (GaSb) is about 0.1 nanometers thick.6. The avalanche photodiode of claim 5 , wherein the first superlattice ...

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Номер записи: 30
15-01-2015 дата публикации

Photoconductive antenna, terahertz wave generating device, camera, imaging device, and measuring device

Номер: US20150014532A1
Автор: Satoshi Takenaka
Принадлежит: Seiko Epson Corp

A photoconductive antenna includes a semiconductor layer, and first and second electrodes. The semiconductor layer includes a first conductive region and a second conductive region constituting portions of a surface of the semiconductor layer disposed on a side to which the pulsed light is irradiated, and a third conductive region disposed between the first and second conductive regions. The first conductive region contains a first conductive type impurity and the second conductive region contains a second conductive type impurity. The third conductive region has a carrier density lower than a carrier density of the first conductive region or a carrier density of the second conductive region. The first electrode and the second electrode are disposed on the side to which the pulsed light is irradiated. The third conductive region is configured and arranged to be irradiated by the pulsed light.

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Номер записи: 31
14-01-2016 дата публикации

COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL AND MANUFACTURING METHOD OF COMPOUND-SEMICONDUCTOR PHOTOVOLTAIC CELL

Номер: US20160013336A1
Автор: Sato Shunichi
Принадлежит: RICOH COMPANY, LTD.

A compound-semiconductor photovoltaic cell includes a first photoelectric conversion cell, which includes an absorption layer made of a first compound-semiconductor material which lattice matches with gallium arsenide (GaAs) or germanium (Ge); and a window layer made of aluminum indium phosphide (AlInP (0 Подробнее

Номер записи: 32
11-01-2018 дата публикации

AVALANCHE PHOTODIODE TYPE STRUCTURE AND METHOD OF FABRICATING SUCH A STRUCTURE

Номер: US20180013030A1
Автор: Rothman Johan
Принадлежит: Commissariat A L'Energie Atomique Et Aux Energies Alternatives

A structure of the avalanche photodiode type includes a first P doped semiconducting zone, a second multiplication semiconducting zone adapted to supply a multiplication that is preponderant for electrons, a fourth P doped semiconducting “collection” zone. One of the first and second semiconducting zones forms the absorption zone. The structure also includes a third semiconducting zone formed between the second semiconducting zone and the fourth semiconducting zone. The third semiconducting zone has an electric field in operation capable of supplying an acceleration of electrons between the second semiconducting zone and the fourth semiconducting zone without multiplication of carriers by impact ionisation. 1. An avalanche photodiode type structure designed to receive an electromagnetic radiation within a first range of wave lengths , the structure comprising:a first semiconducting zone of a first type of conductivity for which the majority carriers are holes, and with a first face intended to receive the electromagnetic radiation and a second face opposite the first face,a second semiconducting zone, called the multiplication zone, in contact with the second face of the first semiconducting zone and with a lower concentration of majority carriers than the first semiconducting zone, the second semiconducting zone being conformed to supply a multiplication of carriers by impact ionisation that is preponderant for electrons,a fourth semiconducting zone called the collection zone, the fourth semiconducting zone being of a second type of conductivity for which the majority carriers are electrons, the fourth semiconducting zone having a higher concentration of majority carriers than the second semiconducting zone,wherein at least one of the first and second semiconducting zones being formed from a semiconducting material with a suitable band gap width to promote absorption of the electromagnetic radiation,wherein the structure comprises a third and a fifth semiconducting ...

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Номер записи: 33
11-01-2018 дата публикации

METHOD FOR FABRICATING A HETEROJUNCTION SCHOTTKY GATE BIPOLAR TRANSISTOR

Номер: US20180013032A1
Автор: KHADER Mahmoud M., NEKOVEI Reza, RATCHA Aditya Chandra Sai, Verma Amit
Принадлежит:

Certain embodiments of the present invention may be directed to a transistor structure. The transistor structure may include a semiconductor substrate. The semiconductor substrate may include a drift region, a collector region, an emitter region, and a lightly-doped/undoped region. The lightly-doped/undoped region may be lightly-doped and/or undoped. The transistor structure may also include a heterostructure. The heterostructure forms a heterojunction with the lightly-doped/undoped region. The transistor structure may also include a collector terminal. The collector terminal is in contact with the collector region. The transistor structure may also include a gate terminal. The gate terminal is in contact with the heterostructure. The transistor structure may also include an emitter terminal. The emitter terminal is in contact with the lightly-doped/undoped region and the emitter region. 1. A method for fabricating a transistor structure , the method comprising:performing a photolithography process to transfer a device pattern onto a semiconductor substrate, wherein the semiconductor substrate comprises a drift region and a lightly-doped/undoped region, and the lightly-doped/undoped region is lightly-doped and/or undoped;doping a collector region of the substrate;doping an emitter region of the substrate;forming a heterostructure, wherein the heterostructure forms a heterojunction with the lightly-doped/undoped region;forming a collector terminal, wherein the collector terminal is in contact with the collector region;forming a gate terminal, wherein the gate terminal is in contact with the heterostructure; andforming an emitter terminal, wherein the emitter terminal is in contact with the lightly-doped/undoped region and the emitter region.2. The method according to claim 1 , wherein the drift region comprises an N− doped region.3. The method according to claim 1 , wherein the doping the collector region comprises performing P+ doping.4. The method according to ...

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Номер записи: 34
10-01-2019 дата публикации

TRANSDERMAL MICRONEEDLE CONTINUOUS MONITORING SYSTEM

Номер: US20190013425A1
Автор: HUANG Juang-Tang
Принадлежит:

Transdermal microneedles continuous monitoring system is provided. The continuous system monitoring includes a substrate, a microneedle unit, a signal processing unit and a power supply unit. The microneedle unit at least comprises a first microneedle set used as a working electrode and a second microneedle set used as a reference electrode, the first and second microneedle sets arranging on the substrate. Each microneedle set comprises at least a microneedle. The first microneedle set comprises at least a sheet having a through hole on which a barbule forms at the edge. One of the sheets provides the through hole from which the barbules at the edge of the other sheets go through, and the barbules are disposed separately. 1. A transdermal microneedles continuous monitoring system , comprising:a substrate;a microneedle unit comprising at least a first microneedle set used as a working electrode and a second microneedle set used as a reference electrode, each of the microneedle sets comprising at least a microneedle, the first microneedle set comprising at least two sheets, each of the sheets having a through hole defined thereon and a barbule arranged at the peripheral of the through hole, the through hole on one sheet allowing the corresponding barbules of an other sheet to pass and the barbules being disposed separately;a signal processing unit arranged on the substrate and electrically connecting to the first microneedle set and the second microneedle set; anda power supply unit providing working power to the transdermal microneedles continuous monitoring system,wherein the at least two sheets comprise a first sheet, a second sheet and a third sheet stacked with each other, the first sheet having at least one first through hole defined thereon and a first barbule at the peripheral of the first through hole, the second sheet having at least one second through hole defined thereon and a second barbule at the peripheral of the second through hole, the third sheet ...

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Номер записи: 35
14-01-2021 дата публикации

Photodiode

Номер: US20210013357A1
Автор: Baolai Liang, Chee Hing Tan, Diana Lynne Huffaker, John Paul Raj DAVID, Shiyu Xie
Принадлежит: University College Cardiff Consultants Ltd, UNIVERSITY OF CALIFORNIA, University of Sheffield

In an example, an avalanche photodiode comprises a substrate and a structure comprising a first layer and a second layer, the first and second layers over and parallel to the substrate, wherein the first layer is between the substrate and the second layer. The first layer is an Aluminium Arsenide Antimonide multiplication layer, and wherein the cross-sectional area parallel to the substrate of the first layer is smaller than that of the second layer, thereby forming a recess in a sidewall of the structure.

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Номер записи: 36
09-01-2020 дата публикации

INFRARED DETECTOR, INFRARED DETECTION DEVICE, AND METHOD OF MANUFACTURING INFRARED DETECTOR

Номер: US20200013822A1
Автор: OKUMURA Shigekazu
Принадлежит: FUJITSU LIMITED

An infrared detector includes a pixel separation wall. The infrared detector includes a semiconductor crystal substrate; a first contact layer formed on the semiconductor crystal substrate, a pixel separation wall formed on the first contact layer and configured to separate pixels; a buffer layer formed on the first contact layer and on a side surface of the pixel separation wall in a region surrounded by the pixel separation wall, an infrared-absorbing layer formed on the buffer layer, a second contact layer formed on the infrared-absorbing layer, an upper electrode formed on the second contact layer, and a lower electrode formed on the first contact layer. The buffer layer and the first contact layer are formed of a compound semiconductor of a first conductivity type. The pixel separation wall and the second contact layer are formed of a compound semiconductor of a second conductivity type. 1. An infrared detector comprising:a semiconductor crystal substrate;a first contact layer formed on the semiconductor crystal substrate, the first contact layer being a compound semiconductor of a first conductivity type;a plurality of pixels formed on the first contact layer;a pixel separation wall, formed on the first contact layer, configured to separate each of the plurality of pixels, the pixel separation wall being a compound semiconductor of a second conductivity type;the plurality of pixels including a buffer layer formed on the first contact layer and of the compound semiconductor of the first conductivity type and formed on a side surface of the pixel separation wall in a region surrounded by the pixel separation wall;an infrared-absorbing layer formed on the buffer layer and being a compound semiconductor;a second contact layer formed on the infrared-absorbing layer and being of the compound semiconductor of the second conductivity type;an upper electrode formed on the second contact layer; anda lower electrode formed on the first contact layer.2. The infrared ...

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Номер записи: 37
21-01-2016 дата публикации

NITRIDE SEMICONDUCTOR STRUCTURE

Номер: US20160020346A1
Автор: CHAN Yi-Jen, Hsuan Jung, Hu Chih-Wei
Принадлежит:

A nitride semiconductor structure is provided. The nitride semiconductor structure includes a substrate, a SiC nucleation layer, a composite buffer layer and a nitride semiconductor layer. The SiC nucleation layer is located on the substrate. The composite buffer layer is located on the SiC nucleation layer. The nitride semiconductor layer is located on the composite buffer layer. Besides, the nitride semiconductor structure is an AlN free semiconductor structure.

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Номер записи: 38
21-01-2016 дата публикации

SEMICONDUCTOR STRUCTURE

Номер: US20160020353A1
Автор: Chu Chen-Fu
Принадлежит:

The invention discloses a semiconductor structure, processing light signal, the semiconductor structure comprising: a first type semiconductor layer; a second type semiconductor layer; an active layer located between the first type semiconductor layer and the second type semiconductor layer; a reflector covered surfaces of the first type semiconductor layer and the second type semiconductor layer; a first pad disposed on a top surface of the reflector which is covered the first type semiconductor layer; a second pad disposed on the top surface of the reflector or second type semiconductor layer; an aperture disposed on the top surface of the first type semiconductor layer and passed through the reflector; and a light collection module disposed around the aperture or covered a top surface of the reflector.

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Номер записи: 39
03-02-2022 дата публикации

Wideband Back-Illuminated Electromagnetic Radiation Detectors

Номер: US20220037543A1
Автор: Arbore Mark Alan, Chevallier Romain F., Kangas Miikka M., Morea Matthew T., Sarmiento Tomas
Принадлежит:

An electromagnetic radiation detector includes an InP substrate having a first surface opposite a second surface; a first InGaAs electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths; a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths; a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; and an immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber. 1. An electromagnetic radiation detector , comprising:an indium phosphide (InP) substrate having a first surface opposite a second surface;a first indium gallium arsenide (InGaAs) electromagnetic radiation absorber stacked on the first surface and configured to absorb a first set of electromagnetic radiation wavelengths;a set of one or more buffer layers stacked on the first InGaAs electromagnetic radiation absorber and configured to absorb at least some of the first set of electromagnetic radiation wavelengths;a second InGaAs electromagnetic radiation absorber stacked on the set of one or more buffer layers and configured to absorb a second set of electromagnetic radiation wavelengths; andan immersion condenser lens formed on the second surface and configured to direct electromagnetic radiation through the InP substrate and toward the first InGaAs electromagnetic radiation absorber and the second InGaAs electromagnetic radiation absorber; wherein,the second set of electromagnetic radiation wavelengths includes at least some electromagnetic radiation wavelengths that are not in ...

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Номер записи: 40
17-01-2019 дата публикации

INFRARED DETECTOR, IMAGING DEVICE, AND IMAGING SYSTEM

Номер: US20190019907A1
Автор: Kon Junichi, NISHINO Hironori, Suzuki Ryo
Принадлежит: FUJITSU LIMITED

An infrared detector includes a quantum dot structure, and an electrode that is coupled to the quantum dot structure, wherein the quantum dot structure is obtained by stacking a plurality of structures each including a quantum dot, a first barrier layer under the quantum dot and a second barrier layer over the quantum dot to cover the quantum dots, and an intermediate layer under the first barrier layer, and wherein the first barrier layer includes a first region and a second region having a lower Al concentration than that of the intermediate layer between the first region and the intermediate layer. 1. An infrared detector comprising:a quantum dot structure; andan electrode that is coupled to the quantum dot structure,wherein the quantum dot structure is obtained by stacking a plurality of structures each includinga quantum dot,a first barrier layer under the quantum dot and a second barrier layer over the quantum dot to cover the quantum dots, andan intermediate layer under the first barrier layer, andwherein the first barrier layer includes a first region and a second region having a lower Al concentration than that of the intermediate layer between the first region and the intermediate layer.2. The infrared detector according to claim 1 ,wherein the first region has a larger energy gap than that of the intermediate layer, and the second region has a smaller energy gap than that of the intermediate layer.3. The infrared detector according to claim 1 ,{'sub': a', '1-a, 'wherein the second region has AlGaAs (0≤a<1).'}4. The infrared detector according to claim 1 ,{'sub': a', '1-a, 'wherein the second region has InGaP (0≤a≤1).'}5. The infrared detector according to claim 3 ,{'sub': b', '1-b', 'c', '1-c, 'wherein the intermediate layer has AlGaAs (0 Подробнее

Номер записи: 41
24-01-2019 дата публикации

LIGHT-RECEIVING ELEMENT, MANUFACTURING METHOD OF THE SAME, IMAGING DEVICE, AND ELECTRONIC APPARATUS

Номер: US20190027528A1
Автор: Yoshida Shinichi
Принадлежит:

This light-receiving element includes a plurality of photoelectric conversion layers, each of which includes a compound semiconductor, and absorbs a wavelength in an infrared region to generate an electric charge, and an insulating film that is provided to surround each of the plurality of photoelectric conversion layers. 1. A light-receiving element , comprising:a plurality of photoelectric conversion layers each of which includes a compound semiconductor, and absorbs a wavelength in an infrared region to generate an electric charge; andan insulating film that is provided to surround each of the plurality of photoelectric conversion layers.2. The light-receiving element according to claim 1 , further comprising a passivation film that is provided to cover a corresponding one of side faces of the photoelectric conversion layers.3. The light-receiving element according to claim 2 , wherein the insulating film is provided to fill a gap between the photoelectric conversion layers each covered with the passivation film.4. The light-receiving element according to claim 2 , further comprising an electrode electrically coupled to a corresponding one of the photoelectric conversion layers claim 2 ,wherein the plurality of photoelectric conversion layers are each provided on one face of a substrate, andthe passivation film is provided to cover, of a surface of the corresponding photoelectric conversion layer, a portion excluding a portion coupled to the electrode and a portion facing the substrate.5. The light-receiving element according to claim 2 , further comprising an electrode electrically coupled to a corresponding one of the photoelectric conversion layers claim 2 ,wherein the passivation film is provided to cover, of a surface of the corresponding photoelectric conversion layer, a portion excluding a portion coupled to the electrode.6. The light-receiving element according to claim 2 , wherein the passivation film includes an insulator or a semiconductor.7. The light ...

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Номер записи: 42
24-01-2019 дата публикации

A COMPOSITE NANOPARTICLE AND PHOTODETECTOR COMPRISING THE NANOPARTICLE

Номер: US20190027631A1
Автор: HARRIS Nadine, White Richard
Принадлежит:

A composite nanoparticle () comprises an inner core () made of a transparent dielectric material, a first coating layer () made of a plasmonic material which overlays the inner core () and a second coating layer () made of a semiconductor material overlaying the first coating layer (). Incident light is absorbed by generating surface plasmons at a boundary () between the inner core () and the first coating layer () and at a boundary () between the first coating layer () and the second coating layer () in order to increase the light absorption and thus the exciton generation by the second coating layer (). The structure of composite particle () also allows for tuning of the resonance of the surface plasmons which tunes the frequency of light, or other electromagnetic radiation, that is detected. A photodetector for detecting the absorbed light comprises a channel () which is a layer of a two-dimensional material between a source electrode () and a drain electrode (), and a layer () of a plurality of composite particles (). The layer () acts as a photogate of the field effect transistor (). 115-. (canceled)16. A composite particle comprising:an inner core comprising a dielectric material;a first coating layer provided overlaying at least part of the inner core;a second coating layer provided overlaying the first coating layer where the second coating layer comprises a semi-conductor material; andwherein the first coating layer comprises a plasmonic material configured to enable surface plasmons to be generated at a boundary between the inner core and the first coating layer and a boundary between the first coating layer and the second coating layer.17. A composite particle as claimed in wherein the thickness of the first coating layer enables coupling between surface plasmons generated at the boundary between the inner core and the first coating layer and surface plasmons generated at the boundary between the first coating layer and the second coating layer.18. A ...

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Номер записи: 43
24-01-2019 дата публикации

Optoelectronic Component and Method for Producing an Optoelectronic Component

Номер: US20190027654A1
Автор: Höppel Lutz, Scholz Dominik
Принадлежит:

An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a component includes a semiconductor layer sequence having a first semiconductor layer, an active layer, a second semiconductor layer and a top side stacked in the recited order, a first contact layer arranged at the first semiconductor layer, a mirror layer arranged on the top side and a recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer, wherein the recess has a bottom surface in a region of the first semiconductor layer, wherein the mirror layer covers a portion of the recess in plan view, wherein the first contact layer is in direct electrical and mechanical contact with a contact pin, and wherein the contact pin extends from the first contact layer to the top side of the semiconductor layer sequence. 117-. (canceled)18. An optoelectronic component comprising:a semiconductor layer sequence having a first semiconductor layer, an active layer configured to emit or absorb electromagnetic radiation during operation, a second semiconductor layer and a top side stacked in the recited order;a first contact layer arranged at the first semiconductor layer, via which the first semiconductor layer is configured to be electrically contacted during operation;a mirror layer arranged on the top side, via which the second semiconductor layer is configured to be electrically contacted during operation; anda recess in the semiconductor layer sequence which extends from the top side through the entire second semiconductor layer and the active layer and which opens into the first semiconductor layer,wherein the recess has a bottom surface in a region of the first semiconductor layer, the bottom surface being delimited in a lateral direction, parallel to the active layer, by at least one side wall running transversely to the active layer,wherein the bottom surface and the side ...

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Номер записи: 44
23-01-2020 дата публикации

Semiconductor Quantum Dot Device And Method For Forming A Scalable Linear Array Of Quantum Dots

Номер: US20200027972A1
Автор: Hazard Thomas, Petta Jason, Zajac David
Принадлежит:

Scalable quantum dot devices and methods are described. An example quantum dot device may comprise one or more repeated cells of a repeating quantum dot structure. The repeated cells may be arranged as a linear array of quantum dots. A single repeated cell may comprise a plurality of quantum dots. The repeated cells may be configured to cause movement of a single electron between adjacent quantum dots. A repeated cell may also comprise a charge sensor for readout of the plurality of quantum dots. 1. A quantum dot device , comprising:a repeating quantum dot cell structure having repeated cells, wherein each of the repeated cells is electrically connected to another one of the repeated cells which is adjacent thereto.2. The quantum dot device of claim 1 , wherein electrically-connected quantum dots of at least one of the repeated cells are provided in a nearest neighbor configuration.3. The quantum dot device of claim 1 , wherein at least one of the repeated cells includes at least two quantum dots.4. The quantum dot device of claim 1 , wherein one or more of the repeated cells includes at least three conductive layers and at least two insulating layers electrically insulating the at least three conductive layers from one another.5. The quantum dot device of claim 4 , wherein the at least three conductive layers comprise:a first conductive layer configured to operate as a screening layer; 'a third conductive layer configured to tune at least one barrier between regions of the 2DEG.', 'a second conductive layer configured to cause accumulation of electrons in a two-dimensional electron gas (2DEG); and'}6. The quantum dot device of claim 5 , wherein a first one of the insulating layers electrically insulates the first conductive layer from one or more of the second conductive layer or the third conductive layer claim 5 , and a second one of the insulating layers electrically insulates the second conductive layer from the third conductive layer.7. The quantum dot device ...

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Номер записи: 45
23-01-2020 дата публикации

Infrared detecting device

Номер: US20200028020A1
Автор: Hiromi Fujita, Osamu MOROHARA, Yoshiki Sakurai
Принадлежит: Asahi Kasei Microdevices Corp

Provided is an infrared detecting device with high SNR. The infrared detecting device includes: a semiconductor substrate; a first compound semiconductor layer; a light receiving layer formed on the first compound semiconductor layer and containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s); a third compound semiconductor layer; and a second compound semiconductor layer containing at least In, Al, and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), in which the first compound semiconductor layer includes, in the stated order, a first A layer, a first B layer, and a first C layer, each containing at least In and Sb and having a predetermined range(s) of Al or Al and Ga proportion(s), and the proportion(s) of the Al composition or the Al composition and the Ga composition of each layer satisfy a predetermined relation(s).

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Номер записи: 46
28-01-2021 дата публикации

OPTICAL CLADDING LAYER DESIGN

Номер: US20210028323A1
Автор: Koch Brian Robert, Norberg Erik Johan, RAMASWAMY ANAND
Принадлежит:

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer. 120-. (canceled)21. A semiconductor device comprising:a cladding layer defining a longitudinal direction transverse to a surface of the cladding layer and a lateral direction parallel to the cladding layer; anda III-V semiconductor layer on the surface of the cladding layer, the III-V semiconductor layer having a wider lateral width that is wider than a narrow lateral width of the cladding layer, the III-V semiconductor layer having an active region with light confined in the III-V semiconductor layer by the narrow lateral width of the cladding layer.22. The semiconductor device of claim 21 , further comprising a silicon semiconductor layer positioned on another surface of the cladding layer opposite the surface of the cladding layer.23. The semiconductor device of claim 22 , wherein the light is of at least a first wavelength claim 22 , and wherein the silicon semiconductor layer is shaped to form a waveguide for at least a first wavelength of light.24. The semiconductor device of claim 23 , wherein the silicon semiconductor layer is shaped to form a shunt of silicon that extends into the cladding layer.25. The semiconductor device of claim 24 , wherein the shunt has dimensions smaller than the first wavelength of light in the silicon semiconductor layer.26. The semiconductor device of claim 24 , wherein the ...

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Номер записи: 47
02-02-2017 дата публикации

SEMICONDUCTOR LIGHT-RECEIVING DEVICE

Номер: US20170033254A1
Автор: Yamaguchi Harunaka
Принадлежит: Mitsubishi Electric Corporation

A semiconductor light-receiving device includes: a semi-insulating substrate; and a buffer layer, a p-type contact layer, a light absorption layer, a p-type field alleviating layer, an avalanche multiplication layer, an n-type field alleviating layer and an n-type contact layer laminated in order on the semi-insulating substrate, wherein the buffer layer includes a superlattice obtained by alternately laminating an InP layer and an AlGaInAs layer (0.16≦x≦0.48, 0≦y≦0.31) and does not absorb light of a wavelength band absorbed by the light absorption layer. 1. A semiconductor light-receiving device comprising:a semi-insulating substrate; anda buffer layer, a p-type contact layer, a light absorption layer, a p-type field alleviating layer, an avalanche multiplication layer, an n-type field alleviating layer and an n-type contact layer laminated in order on the semi-insulating substrate,{'sub': x', 'y', '1-x-y, 'wherein the buffer layer includes a superlattice obtained by alternately laminating an InP layer and an AlGaInAs layer (0.16≦x≦0.48, 0≦y≦0.31) and does not absorb light of a wavelength band absorbed by the light absorption layer.'}2. The semiconductor light-receiving device of claim 1 , wherein the light absorption layer includes first and second light absorption layers formed separate from each other on the p-type contact layer claim 1 ,the p-type field alleviating layer includes first and second p-type field alleviating layers formed on the first and second light absorption layers respectively,the avalanche multiplication layer includes first and second avalanche multiplication layers formed on the first and second light p-type field alleviating layers respectively,the n-type field alleviating layer includes first and second n-type field alleviating layers formed on the first and second avalanche multiplication layers respectively,the n-type contact layer includes first and second n-type contact layers formed on the first and second n-type field alleviating ...

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Номер записи: 48
02-02-2017 дата публикации

RESONANT CAVITY STRAINED III-V PHOTODETECTOR AND LED ON SILICON SUBSTRATE

Номер: US20170033261A1
Автор: Kim Jeehwan, LI NING, Sadana Devendra K.
Принадлежит:

An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer. 1. A photodetector comprising:a germanium including buffer layer atop a silicon including substrate;a first distributed Bragg reflector stack of III-V semiconductor material layers present on the germanium including buffer layer;an absorption layer of III-V semiconductor material present on the first distributed Bragg reflector stack of III-V semiconductor material, wherein a difference in lattice dimension between the absorption layer and the first distributed Bragg reflector stack of III-V semiconductor material layers induces a strain in the absorption layer; anda second distributed Bragg reflector stack of III-V semiconductor material layers present on the absorption layer, wherein the strain induced on the absorption layer provides that the photodetector detects light wavelengths greater than 800 nm.2. The photodetector of claim 1 , wherein the first distributed Bragg reflector stack is doped to a first conductivity type claim 1 , and the second distributed Bragg reflector stack is doped to a second conductivity type.3. The photodetector of claim 1 , wherein absorption layer is intrinsic claim 1 , a first conductivity type doped region is present between the absorption layer and the first distributed Bragg reflector stack claim 1 , and a second conductivity type doped region is present between the absorption layer and the second ...

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Номер записи: 49
04-02-2016 дата публикации

LOW NOISE HYBRIDIZED DETECTOR USING CHARGE TRANSFER

Номер: US20160035783A1
Автор: Dixon Peter, Masaun Navneet
Принадлежит:

A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion. 1. An infrared photodetector comprising:a small bandgap layer of first conductivity type;a large bandgap layer of first conductivity type overlying the small bandgap layer;a standoff layer on a portion of the large bandgap layer;a collection well of second conductivity type in the large bandgap layer and in contact with the small bandgap layer so that the small bandgap layer and the collection well form an infrared photodiode;a transfer well of second conductivity type in the standoff layer and the large bandgap layer and spaced from the collection well and the small bandgap layer; anda transistor that includes the collection well, the transfer well and a region between the collection well and the transfer well.2. The infrared photodetector of claim 1 , wherein the transistor further includes:a drain electrode coupled to the transfer well; anda gate electrode coupled to the region between the collection well and the transfer well.3. The infrared photodetector of claim 2 , wherein the gate and drain electrodes comprise Ti claim 2 , Pt claim 2 , Au claim 2 , Ni claim 2 , Cu claim 2 , or combinations thereof.4. The infrared photodetector of claim 2 , and further comprising:an insulator layer between the gate electrode and the large bandgap layer.5. The infrared photodetector of wherein the transfer well extends to a top ...

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Номер записи: 50
17-02-2022 дата публикации

SUPERLATTICE ABSORBER FOR DETECTOR

Номер: US20220052213A1
Автор: DU Peng
Принадлежит:

A superlattice absorber for a detector is provided. The superlattice absorber includes a plurality of material periods deposited successively. Each of the material periods includes a first layer of InAs, InGaAs, InAsSb or InGaAsSb; and a plurality of second layers of InGaAsSb. The second layers comprise at least two InGaAsSb layers with at least two different content combinations. The content of the second layers is different from that of the first layer. 2. The superlattice absorber according to claim 1 , wherein the second layers with different content combinations comprise different Indium contents and/or Arsenic contents from each other.3. The superlattice absorber according to claim 1 , wherein the second layers have a flexible growth sequence to satisfy certain property requirements.4. The superlattice absorber according to claim 3 , wherein the second layers comprise a structure of InAs/InGaAsSb/InGaAsSb/InGaAsSbor InAs/InGaAsSb/InGaAsSb/InGaAsSb.5. The superlattice absorber according to claim 3 , wherein the second layers comprise a structure of InAs/InGaAsSb/InGaAsSb/InGaAsSb/InGaAsSbwith two content combinations and four layers.6. The superlattice absorber according to claim 1 , wherein a thickness of each of the first layer and the second layers is in a range of 0-20 nm so that the first layer and the second layers are coupled effectively to create miniband.7. The superlattice absorber according to claim 1 , wherein the second layers can be graded in a sub monolayer level so that the contents of the second layers are controlled at the sub monolayer level.8. The superlattice absorber according to claim 1 , wherein each of the material periods further comprises an interface between the first layer and the plurality of second layers claim 1 , and the interface is configured to be InSb-like claim 1 , GaAs-like or mixed to make strain compensation to the superlattice absorber.9. The superlattice absorber according to claim 1 , wherein each of the second layers ...

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Номер записи: 51
31-01-2019 дата публикации

SEMICONDUCTOR STACKED BODY, LIGHT-RECEIVING ELEMENT, AND METHOD FOR PRODUCING SEMICONDUCTOR STACKED BODY

Номер: US20190035954A1
Автор: Akita Katsushi, ARIKATA Suguru, FUYUKI Takuma, Yoshimoto Susumu
Принадлежит: Sumitomo Electric Industries, Ltd.

A semiconductor stacked body includes: a first semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a first conductivity type; a quantum-well light-receiving layer containing a group III-V compound semiconductor; a second semiconductor layer containing a group III-V compound semiconductor; and a third semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a second conductivity type. The first semiconductor layer, the quantum-well light-receiving layer, the second semiconductor layer, and the third semiconductor layer are stacked in this order. The concentration of an impurity that generates a carrier of the second conductivity type is 1×10cmor more and 1×10cmor less in the second semiconductor layer. 1. A semiconductor stacked body comprising:a first semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a first conductivity type;a quantum-well light-receiving layer containing a group III-V compound semiconductor;a second semiconductor layer containing a group III-V compound semiconductor; anda third semiconductor layer containing a group III-V compound semiconductor and being a layer whose conductivity type is a second conductivity type different from the first conductivity type,whereinthe first semiconductor layer, the quantum-well light-receiving layer, the second semiconductor layer, and the third semiconductor layer are stacked in this order, and{'sup': 14', '−3', '17', '−3, 'a concentration of an impurity that generates a carrier of the second conductivity type is 1×10cmor more and 1×10cmor less in the second semiconductor layer.'}2. The semiconductor stacked body according to claim 1 , wherein an interface region claim 1 , which is a region including an interface between the quantum-well light-receiving layer and the second semiconductor layer claim 1 , has a higher concentration of the ...

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Номер записи: 52
30-01-2020 дата публикации

SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS

Номер: US20200035739A1
Автор: Fujii Nobutoshi, Manda Shuji, Maruyama Shunsuke, MATSUMOTO RYOSUKE, SAITO Suguru, Shimizu Hideo, Zaizen Yoshifumi
Принадлежит: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

A semiconductor device including a device substrate and a readout circuit substrate. The device substrate includes a device region and a peripheral region. In the device region, a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked. The peripheral region is disposed outside the device region. The readout circuit substrate faces the first semiconductor layer with the wiring layer in between, and is electrically coupled to the first semiconductor layer through the wiring layer. The peripheral region of the device substrate has a junction surface with the readout circuit substrate. 1. A semiconductor device comprising:a device substrate including a device region and a peripheral region, the device region in which a wiring layer and a first semiconductor layer including a compound semiconductor material are stacked, and the peripheral region disposed outside the device region; anda readout circuit substrate that faces the first semiconductor layer with the wiring layer in between and is electrically coupled to the first semiconductor layer through the wiring layer,the peripheral region of the device substrate having a junction surface with the readout circuit substrate.2. The semiconductor device according to claim 1 , wherein the device region of the device substrate is bonded to the readout circuit substrate on the same plane as the junction surface of the peripheral region.3. The semiconductor device according to claim 1 , wherein the device substrate further includes a buried layer surrounding the first semiconductor layer in the peripheral region.4. The semiconductor device according to claim 3 , further comprising:a first electrode that is provided in the wiring layer and is electrically coupled to the first semiconductor layer; anda second electrode facing the first electrode with the first semiconductor layer in between.5. The semiconductor device according to claim 4 , wherein the device substrate further ...

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Номер записи: 53
30-01-2020 дата публикации

METHODS AND APPARATUSES FOR IMPROVED BARRIER AND CONTACT LAYERS IN INFRARED DETECTORS

Номер: US20200035846A1
Автор: Aifer Edward H., Meyer Jerry R.
Принадлежит:

An infrared detector and a method for forming it are provided. The detector includes absorber, barrier, and contact regions. The absorber region includes a first semiconductor material, with a first lattice constant, that produces charge carriers in response to infrared light. The barrier region is disposed on the absorber region and comprises a superlatice that includes (i) first barrier region layers comprising the first semiconductor material, and (ii) second barrier region layers comprising a second semiconductor material, different from, but lattice matched to, the first semiconductor material. The first and second barrier region layers are alternatingly arranged. The contact region is disposed on the barrier region and comprises a superlattice that includes (i) first contact region layers comprising the first semiconductor material, and (ii) second contact region layers comprising the second semiconductor material layer. The first and second contact region layers are alternatingly arranged. 1. An infrared detector , comprising:an absorber region that comprises a first semiconductor material with a first lattice constant, wherein the first semiconductor material produces charge carriers in response to infrared light;a barrier region disposed on the absorber region, wherein the barrier region is a superlattice comprising: (i) a plurality of first barrier region layers comprising the first semiconductor material, and (ii) a plurality of second barrier region layers comprising a second semiconductor material that is different from the first semiconductor, wherein the plurality of first barrier region layers are alternatingly arranged with the plurality of second barrier region layers; anda contact region disposed on the barrier region, wherein the contact region is another superlattice comprising: (i) a plurality of first contact region layers comprising the first semiconductor material, and (ii) a plurality of second contact region layers comprising the second ...

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Номер записи: 54
11-02-2016 дата публикации

Semiconductor photo-detecting device

Номер: US20160043263A1
Автор: Hwa Mok Kim, Hyung Kyu Kim, Ki Yon Park, Kyu Ho Lee, Sung Hyun Lee
Принадлежит: Seoul Viosys Co Ltd

A photo-detecting device includes a first nitride layer, a light absorption layer disposed on the first nitride layer, and a Schottky junction layer disposed on the light absorption layer. According to a photoluminescence (PL) properties measurement of the photo-detecting device, a first peak light intensity is greater than a second peak light intensity, and the first peak light intensity is a peak light intensity of light emitted from the light absorption layer, and the second peak light intensity is a peak light intensity of light emitted from the first nitride layer.

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Номер записи: 55
09-02-2017 дата публикации

LIGHT RECEIVING APPARATUS, METHOD FOR FABRICATING LIGHT RECEIVING APPARATUS

Номер: US20170040476A1
Автор: Iguchi Yasuhiro, Miura Kohei
Принадлежит: Sumitomo Electric Industries, Ltd.

A light receiving apparatus includes a light receiving device including a compound semiconductor substrate, photodiodes, and bump electrodes; and a semiconductor integrated device including a silicon substrate and read-out circuits. The integrated device is bonded with the light receiving device to face each other in a direction of a first axis through the bump electrodes. The light receiving device has a back surface with first and second back edges extending in a direction of a second axis intersecting with the first axis. The light receiving device has a first slope face extending from the first back edge along a first reference plane, and a second slope face extending from the second back edge along a second reference plane. The back surface of the light receiving device extends along a third reference plane intersecting with the first axis. The first and second reference planes are inclined with the third reference plane. 1. A light receiving apparatus comprising:a light receiving device including a compound semiconductor substrate having a principal surface, a plurality of photodiodes each having an electrode, and a plurality of bump electrodes each of which is connected to at least one of the electrodes of the photodiodes, the photodiodes being arranged to form an array on the principal surface of the compound semiconductor substrate; anda semiconductor integrated device including a silicon substrate and a plurality of read-out circuits arranged to form an array on the silicon substrate, each of the read-out circuits having an electrode that is electrically connected to the electrode of the corresponding photodiode in the light receiving device through the bump electrode,wherein the semiconductor integrated device is bonded with the light receiving device so as to face each other in a direction of a first axis through the bump electrodes,the light receiving device has a back surface with a first back edge and a second back edge that extend in a direction of a ...

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Номер записи: 56
09-02-2017 дата публикации

SEMICONDUCTOR LAYERED STRUCTURE AND PHOTODIODE

Номер: US20170040477A1
Автор: Akita Katsushi, ARIKATA Suguru, Kyono Takashi, NISHIZUKA Koji, Shibata Kaoru
Принадлежит: Sumitomo Electric Industries, Ltd.

A semiconductor layered structure according to the present invention includes a substrate formed of a III-V compound semiconductor; and semiconductor layers disposed on the substrate and formed of III-V compound semiconductors. The substrate has a majority-carrier-generating impurity concentration of 1×10cmor more and 2×10cmor less, and the impurity has an activation ratio of 30% or more. 1. A semiconductor layered structure comprising:a substrate formed of a III-V compound semiconductor; anda semiconductor layer disposed on the substrate and formed of a III-V compound semiconductor,{'sup': 17', '−3', '20', '−3, 'wherein the substrate has a majority-carrier-generating impurity concentration of 1×10cmor more and 2×10cmor less, and the impurity has an activation ratio of 30% or more.'}2. The semiconductor layered structure according to claim 1 , wherein the substrate has an n-type conductivity.3. The semiconductor layered structure according to claim 1 , wherein the semiconductor layer includes a quantum well layer.4. The semiconductor layered structure according to claim 3 , wherein the quantum well layer has a thickness of 1 μm or more.5. The semiconductor layered structure according to claim 3 , wherein the quantum well layer has a structure in which an InGaAs (0.38≦x≦1) layer and a GaAsSb(0.36≦y≦1) layer are alternately stacked claim 3 , or has a structure in which a GaInNAs(0.4≦u≦0.8 claim 3 , 0 Подробнее

Номер записи: 57
08-02-2018 дата публикации

OPTOELECTRONIC SEMICONDUCTOR BODY AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR BODY

Номер: US20180040772A1
Автор: Rudolph Andreas
Принадлежит:

An optoelectronic semiconductor body includes a carrier, a semiconductor layer sequence having a first layer of a first conductivity type, a second layer of a second conductivity type and an active layer, wherein the first layer faces the carrier and the active layer generates or absorbs electromagnetic radiation when operated in its intended operation mode, and at least one through-via extending from the carrier right through the first layer and the active layer and at least partly through the second layer, wherein, when in operation, second charge carriers are injected via the through-via into the second layer, in a region of the active layer and the first layer the through-via is completely surrounded laterally by a continuous and contiguous bed of the active layer and the first layer, the through-via is formed from a semiconductor material, and the carrier is a growth substrate for the semiconductor layer sequence. 116-. (canceled)17. An optoelectronic semiconductor body comprising:a carrier,a semiconductor layer sequence applied to the carrier and having a first layer of a first conductivity type, a second layer of a second conductivity type and an active layer arranged between the first layer and the second layer, wherein the first layer faces the carrier and the active layer generates or absorbs electromagnetic radiation when operated in its intended operation mode, andat least one through-via extending from the carrier right through the first layer and the active layer and at least partly through the second layer, wherein,when in operation, second charge carriers are injected via the through-via into the second layer,in a region of the active layer and the first layer the through-via is completely surrounded laterally by a continuous and contiguous bed of the active layer and the first layer,the through-via is formed from a semiconductor material, andthe carrier is a growth substrate for the semiconductor layer sequence.18. The optoelectronic semiconductor ...

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Номер записи: 58
19-02-2015 дата публикации

III-V PHOTOVOLTAIC ELEMENTS

Номер: US20150047704A1
Автор: Bedell Stephen W., Hekmatshoartabari Bahman, Sadana Devendra K., Shahrjerdi Davood
Принадлежит:

Solar cell structures that have improved carrier collection efficiencies at a heterointerface are provided by low temperature epitaxial growth of silicon on a III-V base. Additionally, a solar cell structure having improved open circuit voltage includes a shallow junction III-V emitter formed by epitaxy or diffusion followed by the epitaxy of SiGepassivated by amorphous SiGe:H. 15-. (canceled)6. A method comprising:obtaining a doped, p-type III-V base layer;depositing an n+ epitaxial crystalline silicon layer on the base layer, andannealing the base layer and the deposited n+ epitaxial crystalline silicon layer, thereby forming an emitter layer comprising an n+ region in the base layer and an n+ epitaxial layer adjoining the emitter layer.7. The method of claim 6 , further comprising the steps of depositing an intrinsic amorphous hydrogenated silicon layer on the n+ epitaxial layer and a transparent conductive layer above the intrinsic amorphous hydrogenated silicon layer.8. The method of claim 7 , wherein the base layer comprises GaAs.9. A solar cell structure comprising:a doped III-V absorber layer;an epitaxial, intrinsic semiconductor layer adjoining the absorber layer;an emitter layer above the epitaxial, intrinsic semiconductor layer, anda transparent conductive layer above the emitter layer.10. The solar cell structure of claim 9 , further comprising an amorphous claim 9 , intrinsic semiconductor layer comprising hydrogenated silicon adjoining the epitaxial claim 9 , intrinsic semiconductor layer.11. The solar cell structure of claim 9 , wherein the emitter layer comprises n+ a-Si:H and the absorber layer is a p-type layer.12. The solar cell structure of claim 9 , wherein the epitaxial claim 9 , intrinsic semiconductor layer is hydrogenated claim 9 , and further comprising an amorphous claim 9 , intrinsic semiconductor layer comprising hydrogenated silicon adjoining the epitaxial claim 9 , hydrogenated intrinsic semiconductor layer.13. The solar cell structure ...

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Номер записи: 59
07-02-2019 дата публикации

SEMICONDUCTOR LAMINATE AND LIGHT-RECEIVING ELEMENT

Номер: US20190044010A1
Автор: Akita Katsushi, ARIKATA Suguru, FUYUKI Takuma, Kyono Takashi, Yoshimoto Susumu
Принадлежит: Sumitomo Electric Industries, Ltd.

A semiconductor layer includes a first semiconductor layer containing a III-V group compound semiconductor and having a first conductivity type, a quantum-well structure containing a III-V group compound semiconductor, a second semiconductor layer containing a III-V group compound semiconductor, a third semiconductor layer containing a III-V group compound semiconductor, and a fourth semiconductor layer containing a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type. The first semiconductor layer, the quantum-well structure, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are stacked in this order. The concentration of an impurity that generates carriers of the second conductivity type is lower in the third semiconductor layer than in the fourth semiconductor layer. The concentration of an impurity that generates majority carriers in the second semiconductor layer is lower in the third semiconductor layer than in the second semiconductor layer. 1. A semiconductor laminate comprising:a first semiconductor layer containing a III-V group compound semiconductor and having a first conductivity type;a quantum-well absorption layer containing a III-V group compound semiconductor;a second semiconductor layer containing a III-V group compound semiconductor;a third semiconductor layer containing a III-V group compound semiconductor; anda fourth semiconductor layer containing a III-V group compound semiconductor and having a second conductivity type different from the first conductivity type,wherein the first semiconductor layer, the quantum-well absorption layer, the second semiconductor layer, the third semiconductor layer, and the fourth semiconductor layer are stacked in this order,a concentration of an impurity that generates carriers of the second conductivity type is lower in the third semiconductor layer than in the fourth semiconductor layer, anda ...

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Номер записи: 60
16-02-2017 дата публикации

DIODE BARRIER INFRARED DETECTOR DEVICES AND BARRIER SUPERLATTICE STRUCTURES

Номер: US20170047461A1
Автор: Wei Yajun
Принадлежит: L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION

Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a barrier layer adjacent to the absorber layer, and a second contact layer adjacent to the barrier layer. The barrier layer includes a diode structure formed by a p-n junction formed within the barrier layer. The barrier layer may be such that there is substantially no barrier to minority carrier holes. In another embodiment, a diode barrier infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, a barrier layer adjacent to the absorber layer, and a diode structure adjacent to the barrier layer. The diode structure includes a second contact layer. 1. A diode barrier infrared detector device utilizing a p-type absorber comprising:a first contact layer, wherein the first contact layer is doped p-type;an absorber layer adjacent to the first contact layer, wherein the absorber layer is doped p-type;a barrier layer adjacent to the absorber layer;a p-type material layer adjacent to the barrier layer; anda second contact layer adjacent to the p-type material layer, wherein the second contact layer is n-doped.2. The diode barrier infrared detector device of claim 1 , wherein the p-type material layer and the second contact layer comprise a material having a wider bandgap than a material of the absorber layer.3. The diode barrier infrared detector device of claim 1 , further comprising a nominally undoped i region disposed between the p-type material layer and the second contact layer.4. The diode barrier infrared detector device of claim 1 , further comprising a nominally undoped graded gap section disposed between the p-type material layer and the second contact layer.5. The diode barrier infrared detector device of claim 4 , wherein a bandgap of the undoped graded gap section is ...

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Номер записи: 61
16-02-2017 дата публикации

INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL WITH A SINGLE METAMORPHIC LAYER

Номер: US20170047466A1
Автор: Cho Benjamin, Newman Fred, Sharps Paul, Stan Mark A.
Принадлежит:

The present disclosure provides a multijunction solar cell that includes: a first sequence of layers of semiconductor material forming a first set of one or more solar subcells; a graded interlayer adjacent to said first sequence of layers; a second sequence of layers of semiconductor material forming a second set of one or more solar subcells; and a high band gap contact layer adjacent said second sequence of layers, wherein the high band gap contact layer is composed of p++ type InGaAlAs or InGaAs. 1. A multijunction solar cell comprising:a first sequence of layers of semiconductor material forming a first set of one or more solar subcells;{'sub': x', '1-x', 'y', '1-y, 'a graded interlayer adjacent to said first sequence of layers, said graded interlayer being composed of (InGa)AlAs, wherein 0 Подробнее

Номер записи: 62
26-02-2015 дата публикации

BACK SIDE ILLUMINATION PHOTODIODE OF HIGH QUANTUM EFFICIENCY

Номер: US20150053923A1
Автор: Frey Laurent, Marty Michel
Принадлежит:

A back side illumination photodiode includes a light-receiving back side surface of a semiconductor material substrate. An area of the light-receiving back side surface includes a recess. The recess is filled with a material having an optical index that is lower than an optical index of the semiconductor material substrate. Both the substrate and the filling material are transparent to an operating wavelength of the photodiode. The recess may be formed to have a ring shape. 1. A back side illumination (BSI) photodiode , including a light receiving back surface wherein at least one area of the light-receiving back surface comprises a recess filled with a material having an optical index lower than that of a semiconductor material of the photodiode which defines said light-receiving back surface , said material having the lower optical index being transparent to an operating wavelength of the BSI photodiode.2. The photodiode of claim 1 , wherein lateral dimensions of said at least one area are smaller than the operating wavelength of the BSI photodiode.3. The photodiode of claim 1 , wherein said at least one area has a ring shape.4. The photodiode of claim 1 , wherein the light-receiving back surface has lateral dimensions in the range from one to two times said operating wavelength.5. The photodiode of claim 1 , wherein the semiconductor material is silicon and said material having the lower optical index is silicon oxide.6. The photodiode of claim 3 , wherein an internal lateral dimension of the ring shape is in the range between approximately 200 and approximately 500 nm and wherein an external lateral dimension is in the range between approximately 450 and approximately 650 nm for an operating wavelength corresponding to red.7. The photodiode of claim 1 , wherein side walls and a floor of the recess are doped to a higher dopant concentration than said semiconductor material.8. The photodiode of claim 7 , wherein said light receiving back surface is doped to a ...

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Номер записи: 63
26-02-2015 дата публикации

SPAD PHOTODIODE OF HIGH QUANTUM EFFICIENCY

Номер: US20150053924A1
Автор: Boutami Salim, Frey Laurent, Jouan Sebastien, Marty Michel
Принадлежит:

A SPAD-type photodiode has a semiconductor substrate with a light-receiving surface. A lattice formed of interlaced strips made of a first material covers the light receiving surface. The lattice includes lattice openings with lateral walls covered by a spacer made of a second material. Then first and second materials have different optical indices, and further each optical index is less than or equal to the substrate optical index. A pitch of the lattice is of the order of a magnitude of an operating wavelength of the photodiode. The first and second materials are transparent at that operating wavelength. The lattice is made of a conductive material electrically coupled to an electrical connection node (for example, a bias voltage node). 1. A SPAD-type photodiode , comprising:a semiconductor substrate having a light-receiving surface;interlaced strips of a first material forming a lattice over said light receiving surface, said first material having a first optical index;at least one spacer of a second material on lateral walls of said interlaced strips, said second material having a second optical index different from the first optical index;wherein said lattice has a pitch of the order of a magnitude of an operating wavelength of the photodiode;wherein the first and second materials are transparent to the operating wavelength; andwherein the first material is conductive and is electrically coupled to an electrical connection node.2. The photodiode of claim 1 , wherein the first optical index (n1) is different from second optical index (n2) claim 1 , wherein n1 and n2 are both lower than or equal to a substrate optical index (n) of the semiconductor substrate.3. The photodiode of claim 2 , further comprising a protection layer covering the strips and spacers which is made of a third material having a third optical index lower than the first and second optical indices.4. The photodiode of claim 3 , wherein said protection layer fills recesses defined by said ...

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Номер записи: 64
08-05-2014 дата публикации

ULTRA-HIGH PHOTOSENSITIVITY VERTICAL NANOWIRE ARRAYS FOR RETINAL PROSTHESIS

Номер: US20140128972A1
Автор: Cauwenberghs Gert, Freeman William, Khraiche Massoud L., Lo Yu-Hwa, Silva Gabriel, Wang Deli
Принадлежит: The Regents of the University of California

A prosthetic retina for implantation in an eye having a defective retina is formed from an array of nanowires having a predetermined spatial distribution, density, size and shape implanted in close proximity to the retina. An electrical conductor is formed at a first end of all nanowires in the array of nanowires and placed in contact with a bias source which biases the array. A plurality of electrodes is located on a second end of each of one nanowire or a bundle of nanowires in the array. Each nanowire produces a photocurrent at a corresponding electrode in response to detection of light impinging on the array of nanowires and the photocurrent stimulates one or more neurons adapted for visual perception. In the preferred embodiment, the predetermined spatial distribution mimics a distribution of rods and cones in a normal eye. 114.-. (canceled)15. An implantable device for detecting a triggering signal within tissue and generating an output signal therefrom , the device comprising:an array of nanowires having a predetermined spatial distribution, density, size and shape implanted in a location within the tissue within which the triggering signal is received;an electrical conductor disposed at a first end of all nanowires in the array of nanowires;a bias source in electrical communication with the electrical conductor for biasing the array;a plurality of electrodes disposed on a second end of each of one nanowire or a bundle of nanowires in the array of nanowires, wherein each nanowire produces a current at a corresponding electrode in response to detection of the triggering signal, wherein the array of nanowires generates an output signal corresponding to the currents produced in response to the triggering signal.16. The implantable device as in claim 15 , wherein the triggering signal comprises light impinging on the tissue and the output signal comprises a signal for stimulating one or more photoreceptor neurons.17. The implantable device as in claim 15 , ...

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Номер записи: 65
15-05-2014 дата публикации

Inorganic Nanocrystal Solar Cells

Номер: US20140130869A1
Автор: Foos Edward E., Tischler Joseph G., Townsend Troy K., Yoon Woojun
Принадлежит: The Government of the United States of America, as represented by the Secretary of the Navy

An inorganic nanocrystal solar cell comprising a substrate, a layer of metal, a layer of CdTe, a layer of CdSe, and a layer of transparent conductor. An inorganic nanocrystal solar cell comprising a transparent conductive substrate, a layer of CdSe, a layer of CdTe, and a Au contact. A method of spray deposition for inorganic nanocrystal solar cells comprising subjecting a first solution of CdTe or CdSe nanocrystals to ligand exchange with a small coordinating molecule, diluting the first solution in solvent to form a second solution, applying the second solution to a substrate, drying the substrate, dipping the substrate in a solution in MeOH of a compound that promotes sintering, washing the substrate with iPrOH, drying the substrate with N, and heating and forming a film on the substrate. 1. An inorganic nanocrystal solar cell comprising:a transparent conductive substrate;a layer of CdSe on the transparent conductive substrate;a layer of CdTe on the layer of CdSe; anda Au contact on the layer of CdTe.2. The inorganic nanocrystal solar cell of wherein the surface roughness of the layer of CdTe is about 19 nm and the thickness is about 244 nm.3. An inorganic nanocrystal solar cell comprising:a solid non-porous substrate;a layer comprising one selected from the group consisting of conductive polymer, transparent conducting oxide, and metal;a layer of CdTe;a layer of CdSe; anda layer of transparent conductor.4. The inorganic nanocrystal solar cell of wherein the surface roughness of the layer of CdTe is about 19 nm and the thickness is about 244 nm.5. The inorganic nanocrystal solar cell of wherein the layer of metal comprises a noble metal.6. The inorganic nanocrystal solar cell of wherein the layer of metal comprises one selected from the group consisting of Au claim 4 , Pt claim 4 , and Ag.7. The inorganic nanocrystal solar cell of wherein the layer of transparent conductor is one selected from the group consisting of carbon nanotubes claim 4 , metal nanowires ...

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Номер записи: 66
25-02-2016 дата публикации

Tetra-Lateral Position Sensing Detector

Номер: US20160056310A1
Автор: Narayan Dass Taneja, Peter Steven Bui
Принадлежит: OSI Optoelectronics Inc

The present invention is directed to a position sensing detector made of a photodiode having a semi insulating substrate layer; a buffered layer that is formed directly atop the semi-insulating substrate layer, an absorption layer that is formed directly atop the buffered layer substrate layer, a cap layer that is formed directly atop the absorption layer, a plurality of cathode electrodes electrically coupled to the buffered layer or directly to the cap layer, and at least one anode electrode electrically coupled to a p-type region in the cap layer. The position sensing detector has a photo-response non-uniformity of less than 2% and a position detection error of less than 10 μm across the active area.

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Номер записи: 67
25-02-2016 дата публикации

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20160056315A1
Автор: Akita Katsushi, Fujii Kei, Ishizuka Takashi, Shibata Kaoru
Принадлежит:

A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure. 1. A semiconductor device , comprising:a III-V semiconductor substrate;a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; anda crystal-adjusting layer disposed between the substrate and the multiple quantum well structure, whereinthe crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure.2. The semiconductor device according to claim 1 , whereina first conductivity type dopant concentration in the first adjusting layer is higher than a first conductivity type dopant concentration in the second adjusting layer.3. The semiconductor device according to claim 2 , whereinthe first conductivity type dopant concentration in the first adjusting layer is 5 times or more of the first conductivity type dopant concentration in the second adjusting layer.4. The semiconductor device according to claim 1 , whereina thickness of the first adjusting layer is ⅕ or less of a thickness of the second adjusting layer.5. The semiconductor device according ...

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Номер записи: 68
25-02-2016 дата публикации

LOW-BANDGAP, MONOLITHIC, MULTI-BANDGAP, OPTOELECTRONIC DEVICES

Номер: US20160056317A1
Автор: CARAPELLA Jeffrey J., WANLASS Mark W.
Принадлежит:

Low bandgap, monolithic, multi-bandgap, optoelectronic devices (), including PV converters, photodetectors, and LED's, have lattice-matched (LM), double-heterostructure (DH), low-bandgap GaInAs(P) subcells () including those that are lattice-mismatched (LMM) to InP, grown on an InP substrate () by use of at least one graded lattice constant transition layer () of InAsP positioned somewhere between the InP substrate () and the LMM subcell(s) (). These devices are monofacial () or bifacial () and include monolithic, integrated, modules (MIMs) () with a plurality of voltage-matched subcell circuits () as well as other variations and embodiments. 1. A monolithic , integrated , module (MIM) , comprising:a plurality of monolithic, multi-bandgap, photovoltaic converters, each of which comprises: (i) a first subcell with a first bandgap and a first lattice constant; (ii) a second subcell with a second bandgap and a second lattice constant, wherein the second bandgap is less than the first bandgap and the second lattice constant is greater than the first lattice constant; and (iii) a lattice constant transition material positioned between the first subcell and the second subcell, said lattice constant transition material having a bandgap at least as large as the first bandgap and a lattice constant that changes from the first lattice constant to the second lattice constant; anda common substrate with a substrate bandgap and a substrate lattice constant, said common substrate being positioned between the lattice constant transition material and the second subcell of each of the monolithic, multi-bandgap, photovoltaic converters, wherein the substrate bandgap is at least as large as the first bandgap and the substrate lattice constant is equal to the second lattice constant.2. The monolithic claim 1 , integrated claim 1 , module (MIM) of claim 1 , wherein the lattice constant transition materials and the first subcells are grown epitaxially on a front side of the substrate ...

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Номер записи: 69
14-02-2019 дата публикации

ACTIVE OPTICAL DEVICE ENABLED BY DIELECTRIC METAMATERIALS

Номер: US20190051770A1
Автор: Brener Igal, Liu Sheng, Sinclair Michael B.
Принадлежит:

An array of dielectric resonators is formed on a substrate. Each resonator includes an active medium having an optical transition that is operative in a process of photodetection or photoemission. The active media each include a quantum well multilayer. The dielectric resonators in the array are each dimensioned to provide a resonance that lies substantially at the frequency of the optical transition. 1. An active optical apparatus comprising a substrate and an optical metamaterial , wherein:the optical metamaterial comprises a regular two-dimensional array of vertical columns overlying the substrate;each of the vertical columns comprises a layered structure of semiconductor material;each said layered structure includes a quantum-well multilayer and has an effective refractive index;each said layered structure is underlain by an optical confinement layer;each said optical confinement layer comprises a confinement material that has a refractive index lower than the effective refractive index of the layered semiconductor structure that overlies it;each of the vertical columns is conformed to provide at least one dielectric resonator having an optical resonance at a frequency f; andeach quantum-well multilayer constitutes an active medium characterized by at least one optical transition whereby light is emitted and/or absorbed with the frequency f.2. The apparatus of claim 1 , wherein the vertical columns are conformed as circular cylinders.3. The apparatus of claim 1 , wherein the quantum-well multilayers are conformed as quantum-dot multilayers.4. The apparatus of conformed as a three-dimensional resonator array claim 1 , wherein:each of the vertical columns is conformed to provide two or more of the dielectric resonators that have an optical resonance at the frequency f;the said two or more dielectric resonators within each vertical column are separated from each other by intervening layers of the confinement material; andeach of the said dielectric resonators ...

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Номер записи: 70
14-02-2019 дата публикации

ACTIVE PHOTONIC DEVICE HAVING A DARLINGTON CONFIGURATION WITH FEEDBACK

Номер: US20190051785A1
Автор: Kobayashi Kevin Wesley
Принадлежит:

Disclosed is an active photonic device having a Darlington configuration with a substrate and a collector layer that is over the substrate. The collector layer includes an inner collector region. An outer collector region substantially surrounds the inner collector region and is spaced apart from the inner collector region. A base layer is over the collector layer. A first outer base region and a second outer base region substantially surround the inner base region and are spaced apart from the inner base region and each other. An emitter layer is over the base layer. The emitter layer includes an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region. A first outer emitter region and a second outer emitter region substantially surround the inner emitter region and are spaced apart from the inner emitter region and each other. 1. A method of manufacturing an active photonic device having a Darlington configuration comprising:providing a substrate; an inner collector region; and', 'an outer collector region that substantially surrounds the inner collector region and is spaced apart from the inner collector region;, 'disposing a collector layer over the substrate and comprising an inner base region;', 'a first outer base region; and', 'a second outer base region, wherein the first outer base region and the second outer base region are spaced apart from the inner base region and each other while substantially surrounding the inner base region;, 'disposing a base layer over the collector layer comprising an inner emitter region that is ring-shaped and extends substantially around an outer periphery of the inner base region;', 'a first outer emitter region; and', 'a second outer emitter region, wherein the first outer emitter region and the second outer emitter region are spaced apart from the inner base region and each other while substantially surrounding the inner emitter region;, ' ...

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Номер записи: 71
14-02-2019 дата публикации

Semiconductor device

Номер: US20190051797A1
Автор: Jin Soo Park, Rak Jun Choi, Youn Joon Sung
Принадлежит: LG Innotek Co Ltd

The embodiment discloses a semiconductor device which includes: a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a first cover electrode disposed on the first electrode; and an insulation layer disposed between the first electrode and the second electrode, wherein the insulation layer comprises a first insulation portion disposed between the first conductive semiconductor layer and the first cover electrode, and a second insulation portion disposed on the first cover electrode, wherein the first cover electrode comprises a first protrusion portion disposed between an upper surface of the first insulation portion and a lower surface of the second insulation portion.

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Номер записи: 72
22-02-2018 дата публикации

PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH AND METHOD FOR MANUFACTURING THE SAME

Номер: US20180053872A1
Автор: JANG Jae Hyung
Принадлежит:

There is provided a photoconductive semiconductor switch device comprising: a semiconductor substrate configured to generate electrons and holes using incident light thereto; at least one pair of conductive layers disposed on the semiconductor substrate, wherein one pair of the conductive layers consists of first and second conductive layers spaced apart from each other, wherein each of the first and second conductive layers contains abundant electrical carriers to have a low resistance; and first and second electrodes disposed on at least partially on the first and second conductive layers respectively. In this way, the application of the photoconductive semiconductor switch device may be widened. 1. A photoconductive semiconductor switch device comprising:a semiconductor substrate configured to generate electrons and holes using incident light thereto;at least one pair of conductive layers disposed on the semiconductor substrate, wherein one pair of the conductive layers consists of first and second conductive layers spaced apart from each other, wherein each of the first and second conductive layers contains a plurality of electrical carriers; andfirst and second electrodes disposed on at least partially on the first and second conductive layers respectively,wherein each of the first and second electrode has surface continuity at a boundary portion between intersecting planes.2. The device of claim 1 , wherein the first and/or second conductive layers include first and/or second ledge portions respectively claim 1 , wherein each of the first and/or second ledge portions further extends inwardly from each of positions of the first and/or second conductive layers vertically overlapping each of inner ends of the first and/or second electrodes claim 1 , wherein the first and/or second ledge portions respectively act to lower electrical resistances in regions of the semiconductor substrate vertically overlapping the first and/or second ledge portions.3. The device of ...

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Номер записи: 73
05-03-2015 дата публикации

METHOD FOR MANUFACTURING A SEMICONDUCTOR METHOD DEVICE BASED ON EPITAXIAL GROWTH

Номер: US20150063388A1
Автор: Lourdudoss Sebastian, Sun Yanting
Принадлежит:

This invention relates to a method for manufacturing a semiconductor device and semiconductor manufactured thereby, including growing, from a seed island mesa, an abrupt hetero-junction comprising a semiconductor crystal with few crystal defects on a dissimilar substrate that can be used as light emitting and photovoltaic device. 1. A method for manufacturing a semiconductor device having a hetero-structure , the method comprising the steps of:forming a buffer layer and a seed layer on a front side of a dissimilar semiconductor substrate,processing to provide at least one seed island mesa of the buffer layer and the seed layer,forming an insulating mask layer on the at least one seed island mesa, the insulating mask layer having an opening provided on top of the seed island mesa, characterized ingrowing a semiconductor growth layer having consecutive semiconductor regions grown onto each other from the opening, epitaxially, vertically and laterally, wherein a first region having high defect density is only grown vertically from the opening, while the other regions are grown until at least one semiconductor region having low defect density coalesces with the front side of the semiconductor substrate or the insulating mask layer.2. The method according to claim 1 , comprising processing to provide the seed island mesa having a particular orientation (α) on the substrate.36060ab. The method according to claim 1 , wherein the insulating mask layer is formed to cover a top surface and sidewalls ( claim 1 , ) of the seed island mesa.4. The method according to claim 1 , where the semiconductor growth layer is grown in gaseous phase.5. The method according to claim 2 , wherein the orientation (α) is selected based on a crystalline plane of the substrate and growth parameters claim 2 , for instance within a range of 0 to ±45° from <110> direction on the surface of the substrate.68011. The method according to claim 1 , wherein the first region and a second region () of the ...

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Номер записи: 74
10-03-2022 дата публикации

SELF-BYPASS DIODE FUNCTION FOR GALLIUM ARSENIDE PHOTOVOLTAIC DEVICES

Номер: US20220077333A1
Автор: Kayes Brendan M., Kizilyalli Isik C., NIE Hui
Принадлежит:

Embodiments of the invention generally relate to photovoltaic devices. In one embodiment, a method for forming a gallium arsenide based photovoltaic device includes providing a semiconductor structure, the structure including an absorber layer comprising gallium arsenide. A bypass function is provided in a p-n junction of the semiconductor structure, where under reverse-bias conditions the p-n junction breaks down in a controlled manner by a Zener breakdown effect. 1. A method for forming a semiconductor device , the method comprising:providing a semiconductor structure, the semiconductor structure including a base layer configured to absorb photons to convert light energy into electrical energy at the device; andwherein providing the semiconductor structure includes forming an emitter layer in the semiconductor structure, the emitter layer being made of a different material than the base layer and having a higher bandgap than the base layer, andwherein a p-n junction of the semiconductor structure is formed between the emitter layer and the base layer such that under reverse-bias conditions in the resulting device the p-n junction provides a bypass function using a Zener breakdown effect that breaks down in a controlled manner.2. The method of claim 1 , wherein the bypass function is intrinsic to the p-n junction of the semiconductor device such that the semiconductor device provides the bypass function with no distinct bypass diode connected to or included in the semiconductor device.3. The method of claim 1 , wherein the base layer is highly doped at about 4×10cmor greater.4. The method of claim 1 , wherein base layer is highly doped at about 4×10cmor greater.5. The method of claim 1 , wherein the base layer is highly doped within a range of about 4×10cmto about 1×10cm claim 1 , and a thickness of the base layer is within a range of about 300 nm to about 3 claim 1 ,500 nm.6. The method of claim 1 , wherein the p-n junction is formed at a location offset from a ...

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Номер записи: 75
01-03-2018 дата публикации

SEMICONDUCTOR DEVICE

Номер: US20180062009A1
Автор: MASUOKA Fujio, Nakamura Hiroki
Принадлежит:

A semiconductor device includes a pillar-shaped semiconductor layer formed on a planar semiconductor layer, a first insulator surrounding the pillar-shaped semiconductor layer, a first gate surrounding the first insulator and made of a metal having a first work function, a second gate surrounding the first insulator and made of a metal having a second work function different from the first work function, a third gate surrounding the first insulator and made of a metal having the first work function, a first metal layer surrounding the first insulator and having a third work function, and a second metal layer surrounding the first insulator and having the third work function. The first gate, the second gate, and the third gate are electrically connected together. 1. A semiconductor device comprising:a planar semiconductor layer formed on a substrate;a pillar-shaped semiconductor layer formed on the planar semiconductor layer;a first insulator surrounding the pillar-shaped semiconductor layer;a first gate surrounding the first insulator and comprising a metal having a first work function;a second gate surrounding the first insulator and comprising a metal having a second work function different from the first work function, the second gate being located below the first gate;a third gate surrounding the first insulator and comprising a metal having the first work function, the third gate being located below the second gate;a first metal layer surrounding the first insulator and having a third work function, the first metal layer being located above the first gate, the first metal layer being electrically connected to an upper portion of the pillar-shaped semiconductor layer, the first metal layer being electrically insulated from the first gate; anda second metal layer surrounding the first insulator and having the third work function, the second metal layer being located below the third gate, the second metal layer being electrically connected to a lower portion of ...

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Номер записи: 76
01-03-2018 дата публикации

Optoelectronic Semiconductor Chip

Номер: US20180062031A1
Автор: Drechsel Philipp, Galler Bastian, Gomez-Iglesias Alvaro, Hirai Asako, Meyer Tobias, Niebling Tobias, Nirschl Anna, Stauss Peter
Принадлежит:

An optoelectronic semiconductor chip is disclosed. In an embodiment the chip includes an active zone with a multi-quantum-well structure, wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction, wherein the multi-quantum-well structure has at least one emission region and multiple transport regions which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction, wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions, and wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction with exception of a junction region between adjacent transport regions and emission regions. 117-. (canceled)18. An optoelectronic semiconductor chip comprising:an active zone with a multi-quantum-well structure based on AlInGaN,wherein the multi-quantum-well structure comprises multiple quantum-well layers and multiple barrier layers, which are arranged sequentially in an alternating manner along a growth direction and which each extends continuously over the entire multi-quantum-well structure,wherein the multi-quantum-well structure has at least one emission region and multiple transport regions, which are arranged sequentially in an alternating manner in a direction perpendicular to the growth direction,wherein at least one of the quantum-well layers and the barrier layers are thinner in the transport regions than in the emission regions,wherein the quantum-well layers in the transport regions and in the emission regions are oriented perpendicularly to the growth direction, with exception of a junction region between adjacent transport regions and emission regions, andwherein an average indium content of the quantum-well layers in the transport regions ...

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Номер записи: 77
20-02-2020 дата публикации

OPTOELECTRONIC SEMICONDUCTOR STRUCTURE HAVING A BIPOLAR PHOTOTRANSISTOR STRUCTURE AND MANUFACTURING METHOD THEREOF

Номер: US20200058822A1
Автор: Chiu Yen-Chieh, Hsu Teng-Po, Yeh Ping-hui
Принадлежит: National Taiwan University of Science and Technology

An optoelectronic semiconductor structure includes a first n-type semiconductor layer, a first quantum well layer, a first p-type semiconductor layer, and a second n-type semiconductor layer. The first quantum well layer is disposed on the first n-type semiconductor layer. The first p-type semiconductor layer is disposed on the first quantum well layer. The second n-type semiconductor layer is disposed on the first p-type semiconductor layer. The second n-type semiconductor layer includes both an n-type dopant and a p-type dopant. The concentration of the n-type dopant in the second n-type semiconductor layer is greater than the concentration of the p-type dopant in the second n-type semiconductor layer. The first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure. A manufacturing method of the optoelectronic semiconductor structure is also provided. 1. An optoelectronic semiconductor structure comprising:a first n-type semiconductor layer;a first quantum well layer disposed on the first n-type semiconductor layer;a first p-type semiconductor layer disposed on the first quantum well layer; anda second n-type semiconductor layer disposed on the first p-type semiconductor layer, wherein the second n-type semiconductor layer comprises both an n-type dopant and a p-type dopant; concentration of the n-type dopant in the second n-type semiconductor layer is greater than concentration of the p-type dopant in the second n-type semiconductor layer; the first n-type semiconductor layer, the first quantum well layer, the first p-type semiconductor layer, and the second n-type semiconductor layer form a bipolar phototransistor structure.2. The optoelectronic semiconductor structure according to claim 1 , wherein the first p-type semiconductor layer further comprises a p-type electron blocking layer disposed right on the first quantum well layer claim 1 ...

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Номер записи: 78
02-03-2017 дата публикации

METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS AND SEMICONDUCTOR COMPONENT

Номер: US20170062351A1
Автор: Kreuter Philipp, Pfeuffer Alexander F., Varghese Tansen, Von Malm Norwin
Принадлежит: OSRAM Opto Semiconductors GmbH

A method for producing a plurality of semiconductor components () is provided, comprising the following steps: a) providing a semiconductor layer sequence () having a first semiconductor layer (), a second semiconductor layer () and an active region (), said active region being arranged between the first semiconductor layer and the second semiconductor layer for generating and/or receiving radiation; b) forming a first connection layer () on the side of the second connection layer facing away from the first semiconductor layer; c) forming a plurality of cut-outs () through the semiconductor layer sequence; d) forming a conducting layer () in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; and e) separating into the plurality of semiconductor components, wherein a semiconductor body () having at least one of the plurality of cut-outs arises from the semiconductor layer sequence for each semiconductor component and the at least one cut-out is completely surrounded by the semiconductor body in a top view of the semiconductor body. Furthermore, a semiconductor component is provided. 1. A method for producing a plurality of semiconductor components , comprising the steps of:a) providing a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer and an active region, arranged between the first semiconductor layer and the second semiconductor layer provided for generating and/or receiving radiation;b) forming a first connection layer on the side of the second connection layer facing away from the first semiconductor layer;c) forming a plurality of cut-outs through the semiconductor layer sequence;d) forming a conducting layer in the cut-outs for establishing an electrically conductive connection between the first semiconductor layer and the first connection layer; ande) singulating into the plurality of semiconductor components, wherein a ...

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Номер записи: 79
04-03-2021 дата публикации

Light receiving device

Номер: US20210066521A1
Автор: Yasuhiro Iguchi
Принадлежит: Sumitomo Electric Industries Ltd

A light receiving device includes a substrate, a first contact layer disposed on a surface of the substrate, a light receiving layer disposed on the first contact layer, an intermediate layer disposed on the light receiving layer, a wide-gap layer having a pn junction disposed on the intermediate layer, a second contact layer disposed on the wide-gap layer, and a groove formed for pixel isolation by removing the second contact layer and part of the wide-gap layer, wherein the intermediate layer has a wider band gap than the light receiving layer, and wherein the wide-gap layer has a wider band gap than the intermediate layer.

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Номер записи: 80
17-03-2022 дата публикации

MXene Optoelectronic Systems And Devices

Номер: US20220085224A1
Автор: Barsoum Michel W, Dianat Pouya, Montazeri Kiana, Nabet Bahram, Titova Lyubov
Принадлежит:

Provided herein are MXene-containing photodetectors and related methods. Also provided are MXene-containing THz polarizers as well as MXene-containing MOSFETs, MESFETs, and HEMFETs. 1. A photodetector , comprising:an assembly that comprises (i) a first semiconducting substrate having a first surface and a second surface; (ii) a first portion of MXene material superposed on a first surface of the semiconducting substrate so as to define a contact between the first portion of MXene material and the first surface of the first semiconducting substrate; and (iii) a second portion of MXene material superposed on the first surface of the first semiconducting substrate so as to define a contact between the second portion of MXene material and the first surface of the first semiconducting substrate,the first portion of MXene material and the second portion of MXene material being separated from one another by a distance.2. The photodetector of claim 1 , further comprising a second semiconducting substrate superposed on the second surface of the first semiconducting substrate claim 1 , the second semiconducting substrate defining a heterojunction with the first semiconducting substrate.3. The photodetector of claim 2 , wherein the first semiconducting substrate comprises AlGaAs claim 2 , and wherein the second semiconducting substrate comprises GaAs.4. The photodetector of claim 2 , wherein the first semiconducting substrate has a bandgap energy (Eg) greater than a bandgap energy (Eg) of the second semiconducting substrate.5. The photodetector of claim 1 , wherein (a) the contact between the first portion of MXene material and the first surface of the first semiconducting substrate is characterized as a Schottky contact claim 1 , or (b) wherein the contact between the second portion of MXene material and the first surface of the first semiconducting substrate is characterized as a Schottky contact claim 1 , or both (a) and (b).6. The photodetector of claim 1 , wherein (a) the ...

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Номер записи: 81
17-03-2022 дата публикации

COMPLIANT SILICON SUBSTRATES FOR HETEROEPITAXIAL GROWTH BY HYDROGEN-INDUCED EXFOLIATION

Номер: US20220085234A1
Автор: Pattison James
Принадлежит:

A method of fabricating a semiconductor device includes implanting dopants into a silicon substrate, and performing a thermal anneal process that activates the implanted dopants. In response to activating the implanted dopants, a layer of ultra-thin single-crystal silicon is formed in a portion of the silicon substrate. The method further includes performing a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon. 1. A method of fabricating a semiconductor device , the method comprising:implanting dopants into a silicon substrate;performing a thermal anneal process that activates the implanted dopants, and in response to activating the implanted dopants forming a layer of ultra-thin single-crystal silicon in a portion of the silicon substrate; andperforming a heteroepitaxy process to grow a semiconductor material from the layer of ultra-thin single-crystal silicon.2. The method of claim 1 , wherein the semiconductor material is different from silicon material included in the silicon substrate.3. The method of claim 1 , wherein the dopants comprise hydrogen (H).4. The method of claim 1 , wherein the layer of ultra-thin single-crystal silicon is contained between a first interfaced defined by direct contact between an underlying portion of the silicon substrate and the layer of ultra-thin single-crystal silicon and a second interface defined by direct contact between the semiconductor material and the layer of ultra-thin single-crystal silicon.5. The method of claim 4 , wherein a distance between the first interface and the second interface defines a thickness of the layer of ultra-thin single-crystal silicon that is less than 100 nm.6. The method of claim 1 , wherein the layer of ultra-thin single-crystal silicon accommodates stress and strain into itself claim 1 , while held on top of the silicon substrate.7. The method of claim 6 , wherein the strain and thickness of the ultra-thin single-crystal silicon ...

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Номер записи: 82
10-03-2016 дата публикации

ARRAY OF NANOWIRES IN A SINGLE CAVITY WITH ANTI-REFLECTIVE COATING ON SUBSTRATE

Номер: US20160071898A1
Автор: WOBER Munib
Принадлежит:

An embodiment relates to image sensor comprising one or more nanowires on a substrate of a cavity, the nanowire being configured to transmit a first portion of an electromagnetic radiation beam incident on the sensor, and the substrate that absorbs a second portion of the electromagnetic radiation beam incident on the sensor, wherein the first portion is substantially different from the second portion. The substrate could have a anti-reflective material. The ratio of a diameter of the cavity to a diameter of the nanowire could be at less than about 10. 1. An image sensor comprising one or more upstanding nanowires on a substrate ,wherein the nanowires are configured to transmit a first portion of an electromagnetic radiation incident on the sensor but not to transmit a second portion of the electromagnetic radiation incident on the sensor;wherein the substrate is configured to absorb the second portion of the electromagnetic radiation beam incident on the sensor,wherein the first portion has frequencies higher than a cutoff frequency and the second portion has frequencies lower than the cutoff frequency.2. The sensor of claim 1 , wherein the second portion comprises at least a portion of electromagnetic radiation that comes out from the nanowire.3. The sensor of claim 1 , wherein the substrate comprises an anti-reflective material on a front side of the substrate that is exposed to the electromagnetic radiation beam incident on the sensor.4. The sensor of claim 1 , wherein at least one of the one or more upstanding nanowires has a diameter above 100 nm.5. The sensor of claim 1 , wherein the nanowire is configured to separate wavelengths of the electromagnetic radiation beam incident on the nanowire at a selective wavelength.6. The sensor of claim 1 , wherein at least one of the one or more upstanding nanowires comprises GaAs.7. The sensor of claim 1 , wherein the substrate comprises GaAs.8. The sensor of claim 1 , wherein the sensor comprises a plurality of ...

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Номер записи: 83
28-02-2019 дата публикации

INFRARED DETECTOR AND INFRARED SENSOR INCLUDING THE SAME

Номер: US20190067362A1
Автор: LEE Sanghun, PARK Changyoung
Принадлежит: SAMSUNG ELECTRONICS CO., LTD.

An infrared detector and an infrared sensor including the infrared detector are provided. The infrared detector includes a plurality of quantum dots spaced apart from each other and including a first component, a first semiconductor layer covering the plurality of quantum dots, and a second semiconductor layer covering the first semiconductor layer. 1. An infrared detector comprising:a substrate;a first electrode, disposed on the substrate; andan infrared-absorbing layer disposed on the first electrode, wherein the infrared-absorbing layer absorbs incident infrared light in a specific wavelength band and generates a current corresponding to absorbed infrared light; and,a second electrode disposed on the infrared-absorbing layer, a first semiconductor layer comprising a first component;', 'a plurality of quantum dots comprising a second component, different from the first component, wherein the plurality of quantum dots are spaced apart from each other and disposed on the first semiconductor layer; and', 'a second semiconductor layer comprising the first component and the second component and covering the plurality of quantum dots., 'wherein the infrared-absorbing layer comprises2. The infrared detector of claim 1 , wherein the specific wavelength band is determined by a content of the second component in the infrared-absorbing layer.3. The infrared detector of claim 1 , wherein a center wavelength of the specific wavelength band is proportional to a content of the second component in the infrared-absorbing layer.4. The infrared detector of claim 1 , wherein a center wavelength of the specific wavelength band is about 1 μm to 3 μm.5. The infrared detector of claim 1 , wherein an energy band of the second semiconductor layer is between an energy band of the plurality of quantum dots and an energy band of the first semiconductor layer.6. The infrared detector of claim 1 , wherein an energy band of the plurality of quantum dots is lower than an energy band of the first ...

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Номер записи: 84
08-03-2018 дата публикации

Tunneling Barrier Infrared Detector Devices

Номер: US20180069140A1
Автор: Wei Yajun
Принадлежит: L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION

Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer. 1. An infrared detector device comprising:a first contact layer;an absorber layer adjacent to the first contact layer, wherein the absorber layer is doped p-type; a bandgap of the hole barrier layer is greater than a bandgap of the absorber layer; and', 'the hole barrier layer comprises a p-n junction;, 'a hole barrier layer adjacent to the absorber layer, whereinan n++ layer adjacent the hole barrier layer, wherein a thickness of the n++ layer is less than a thickness of the hole barrier layer;a barrier layer adjacent to the n++ layer, wherein the barrier layer is doped p++; anda second contact layer adjacent to the barrier layer, wherein the second contact layer is doped p+.2. The infrared detector device of claim 1 , wherein the absorber layer comprises long-wave infrared material.3. The infrared detector device of claim 2 , wherein the hole barrier layer comprises mid-wave infrared material.4. The infrared detector device of claim 3 , wherein the second contact layer comprises mid-wave infrared material.5. The infrared detector device of claim 1 , wherein a bandgap of the n++ layer is the same as a bandgap of the hole barrier layer.6. The infrared ...

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Номер записи: 85
09-03-2017 дата публикации

MULTICOLOR IMAGING DEVICE USING AVALANCHE PHOTODIODE

Номер: US20170069780A1
Автор: Grzesik Michael
Принадлежит:

A multicolor imaging device capable of imaging two or more wavelengths with a single pixel comprises an avalanche photodiode having a material composition such that only one carrier causes substantially all of the impact ionization that occurs within the photodiode. The photodiode is arranged such that, when reverse-biased, the photodiode's gain varies with the photon energy of incident light. The photodiode, preferably a PIN avalanche photodiode or a separate absorber-multiplier photodiode, produces an output signal which can include at least two components produced in response to two different wavelengths of incident light. Circuitry receiving the output signal would typically include a means of extracting each of the components from the output signal. 1. A multicolor imaging device , comprising:an avalanche photodiode, said photodiode having a material composition such that only one carrier causes substantially all of the impact ionization that occurs within said photodiode, and such that, when reverse-biased, the gain of said photodiode varies with the photon energy of incident light, said photodiode producing an output signal; andcircuitry arranged to receive said output signal.2. The imaging device of claim 1 , wherein said photodiode comprises InAs.3. The imaging device of claim 1 , wherein said photodiode comprises HgCdTe.4. The imaging device of claim 1 , wherein said photodiode is a PIN avalanche photodiode or a separate absorber-multiplier photodiode.5. The imaging device of claim 1 , wherein said carrier which causes substantially all of the impact ionization that occurs within said photodiode is electrons.6. The imaging device of claim 1 , wherein said carrier which causes substantially all of the impact ionization that occurs within said photodiode is holes.7. The imaging device of claim 1 , wherein said photodiode comprises HgCdTe.8. The imaging device of claim 1 , wherein said photodiode comprises GaAlSb.9. The imaging device of claim 1 , wherein ...

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Номер записи: 86
05-06-2014 дата публикации

ELECTRONIC DEVICE FROM DISSIPATIVE QUANTUM DOTS

Номер: US20140150860A1
Автор: Morr Dirk K.
Принадлежит: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOI

An example electronic device includes a region formed from an array of dissipative quantum dots. The quantum dots are arranged according to their electronic structure to provide a tailored asymmetry in current flow through the region. 1. An electronic device having a region formed from an array of dissipative quantum dots , the dissipative quantum dots being arranged according to their electronic structure to provide a tailored asymmetry in current flow through the region.2. An electronic device according to claim 1 , wherein the electronic device comprises a diode;wherein the diode comprises:a first contact;a second contact;the region being disposed between the first contact and the second contact and comprising the array of dissipative quantum dots;wherein the dissipative quantum dots respectively vary in electronic structure between the first contact and the second contact;wherein the dissipative quantum dots are arranged in the region according to their respective electronic structure to provide a tailored asymmetry in current flow between forward and reverse directions of applied potential differences across the region.3. The electronic device of claim 1 , wherein the respective electronic structure of the dissipative quantum dots results in different respective energy levels among the arranged dissipative quantum dots.4. The electronic device of claim 3 , wherein the different respective energy levels are different in one or more of energy level width and energy level position.5. The electronic device of claim 1 , wherein the array is one-dimensional.6. The electronic device of claim 1 , wherein the array is multi-dimensional.7. The electronic device of claim 2 , wherein the dissipative quantum dots are arranged in the region in one of respectively increasing energy position of energy levels between the first contact and the second contact and respectively decreasing energy position of energy levels between the first contact and the second contact.8. The ...

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Номер записи: 87
05-06-2014 дата публикации

SECONDARY TREATMENT OF FILMS OF COLLOIDAL QUANTUM DOTS FOR OPTOELECTRONICS AND DEVICES PRODUCED THEREBY

Номер: US20140150861A1
Автор: Beard Matthew C., Chen Hsiang-Yu, Luther Joseph M., Semonin Octavi Escala
Принадлежит: ALLIANCE FOR SUSTAINABLE ENERGY, LLC

A method of forming an optoelectronic device. The method includes providing a deposition surface and contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid. This initial process is repeated over one or more cycles to form an initial QD film on the deposition surface. The method further includes subsequently contacting the QD film with a secondary treatment chemical and optionally contacting the surface with additional QDs to form an enhanced QD layer exhibiting multiple exciton generation (MEG) upon absorption of high energy photons by the QD active layer. Devices having an enhanced QD active layer as described above are also disclosed. 1. A method of forming an optoelectronic device comprising:providing a deposition surface;contacting the deposition surface with a ligand exchange chemical and contacting the deposition surface with a quantum dot (QD) colloid over one or more cycles to form an initial QD film on the deposition surface; andcontacting the QD film with a secondary treatment chemical.2. The method of forming an optoelectronic device of wherein the step of contacting the initial QD film with a secondary treatment chemical comprises contacting the initial QD film with a secondary treatment chemical and contacting the deposition surface with a quantum dot (QD) colloid over one or more cycles to deposit additional QDs on the initial QD film.3. The method of forming an optoelectronic device of wherein the secondary treatment chemical is at least one of hydrazine claim 2 , formic acid claim 2 , mercaptopropionic acid claim 2 , an organic acid claim 2 , methylamine claim 2 , methanol claim 2 , ethanol and ethylenediamine.4. The method of forming an optoelectronic device of wherein the initial QD film is formed to a thickness of about 40 nm to 400 nm.6. The method of forming an optoelectronic device of wherein the initial QD film is thickened by about 1 nm to 50 nm by the deposition ...

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Номер записи: 88
19-03-2015 дата публикации

GALLIUM ARSENIDE AVALANCHE PHOTODIODE

Номер: US20150076647A1
Автор: Biard James R., Tatum James A.
Принадлежит:

An avalanche photodiode can include: an avalanche region having one or more layers prepared from GaAs; an Nabsorption layer extending across the avalanche region; an N-type layer above at least a center portion of the Nabsorption layer; and optionally a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the Nabsorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer. The avalanche photodiode can include a window layer above the N-type layer and lower conductivity layer, and an anode contact above the window layer. The avalanche photodiode can include an N barrier layer below the Nabsorption layer, an N conduction layer below the N barrier layer, a substrate below the N conduction layer, and a cathode contact coupled with the N conduction layer. 1. An avalanche photodiode comprising:an avalanche region having one or more layers prepared from GaAs.2. The avalanche photodiode of claim 1 , the avalanche region comprising:{'sup': '−', 'an Nabsorption layer extending across the avalanche region; and'}{'sup': '−', 'an N-type layer above at least a center portion of the Nabsorption layer.'}3. The avalanche photodiode of claim 2 , wherein the N-type layer extends across the Nabsorption layer.4. The avalanche photodiode of claim 3 , wherein the N-type layer extends across a mesa having the N-type layer and the Nabsorption layer.5. The avalanche photodiode of claim 2 , further comprising:{'sup': '−', 'a lower conductivity layer laterally from the N-type layer to a surface of the avalanche region and above a perimeter portion of the Nabsorption layer, the lower conductivity layer having lower conductivity compared to the N-type layer.'}6. The avalanche photodiode of claim 5 , wherein the lower conductivity layer having a conductivity reducing implant compared to conductivity of the N-type layer.7. The avalanche photodiode of claim 6 , wherein the implant is a ...

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Номер записи: 89
07-03-2019 дата публикации

QUANTUM DOT INFRARED DETECTOR

Номер: US20190074320A1
Автор: Arakawa Yasuhiko, Yoshikawa Hirofumi
Принадлежит:

A quantum dot infrared detector includes a quantum dot-stacked structure in which quantum dot layers each containing quantum dots stacked on top of one another and intermediate layers. The quantum dots are sandwiched between the intermediate layers in the height direction of the quantum dots. The quantum dots have conduction band quantum confinement levels that include a conduction band ground level, a conduction band first excitation level at a higher energy position than the conduction band ground level, and a conduction band second excitation level at a higher energy position than the conduction band ground level. An energy gap between the conduction band first excitation level and the conduction band bottom of the intermediate layer and an energy gap between the conduction band second excitation level and the conduction band bottom of the intermediate layer are each smaller than twice thermal energy. 1. A quantum dot infrared detector comprising:a quantum dot-stacked structure that includes quantum dot layers stacked on top of one another and each including quantum dots and an intermediate layer,wherein the quantum dots have conduction band quantum confinement levels that include a conduction band ground level, a conduction band first excitation level at a higher energy position than the conduction band ground level, and a conduction band second excitation level at a higher energy position than the conduction band ground level,wherein an energy gap between the conduction band first excitation level and a conduction band bottom of the intermediate layer and an energy gap between the conduction band second excitation level and the conduction band bottom of the intermediate layer are each smaller than twice thermal energy, andwherein the conduction band ground level and the conduction band first excitation level are discrete levels.2. The quantum dot infrared detector according to claim 1 , wherein each of the quantum dot layers further includes another ...

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Номер записи: 90
15-03-2018 дата публикации

Tunneling Barrier Infrared Detector Devices

Номер: US20180076345A1
Автор: Wei Yajun
Принадлежит: L-3 COMMUNICATIONS CINCINNATI ELECTRONICS CORPORATION

Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector device includes a first contact layer, an absorber layer adjacent to the first contact layer, and a tunneling structure including a barrier layer adjacent to the absorber layer and a second contact layer adjacent to the barrier layer. The barrier layer has a tailored valence band offset such that a valence band offset of the barrier layer at the interface between the absorber layer and the barrier layer is substantially aligned with the valence band offset of the absorber layer, and the valence band offset of the barrier layer at the interface between the barrier layer and the second contact layer is above a conduction band offset of the second contact layer. 1. An infrared detector device comprising:a first contact layer;an absorber layer adjacent to the first contact layer, wherein the absorber layer is doped p-type; a bandgap of the hole barrier layer is greater than a bandgap of the absorber layer; and', 'the hole barrier layer comprises a p-n junction;, 'a hole barrier layer adjacent to the absorber layer, whereina first barrier layer adjacent to the hole barrier layer, wherein a valence band offset of the first barrier layer is above a conduction band offset that is within the hole barrier layer at an interface between the hole barrier layer and the first barrier layer;a second barrier layer adjacent to the first barrier layer; anda second contact layer adjacent to the second barrier layer.2. The infrared detector device of claim 1 , wherein the first barrier layer claim 1 , the second barrier layer claim 1 , and the second contact layer are doped p+.3. The infrared detector device of claim 1 , wherein:{'sub': x', '0.08', '0.92', '1-x, 'the first barrier layer comprises (GaSb)(AlAsSb)that is p doped; and'}{'sub': y', '0.08', '0.92', '1-y, 'the second barrier layer comprises (GaSb)(AlAsSb)with y>x and a ...

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Номер записи: 91
16-03-2017 дата публикации

OPTICAL CLADDING LAYER DESIGN

Номер: US20170077325A1
Автор: Koch Brian, Norberg Erik Johan, RAMASWAMY ANAND
Принадлежит:

Embodiments of the invention describe apparatuses, optical systems, and methods related to utilizing optical cladding layers. According to one embodiment, a hybrid optical device includes a silicon semiconductor layer and a III-V semiconductor layer having an overlapping region, wherein a majority of a field of an optical mode in the overlapping region is to be contained in the III-V semiconductor layer. A cladding region between the silicon semiconductor layer and the III-V semiconductor layer has a spatial property to substantially confine the optical mode to the III-V semiconductor layer and enable heat dissipation through the silicon semiconductor layer. 1. (canceled)2. An apparatus , comprising:a cladding layer defining a longitudinal direction transverse to a first surface of the cladding layer and a lateral direction parallel to the cladding layer, the cladding layer having a first thickness in a first lateral region and a second thickness in a second lateral region, the second thickness being greater than the first thickness;a silicon semiconductor layer positioned on a second surface the cladding layer opposite the first surface of the cladding layer, the silicon semiconductor layer having a third thickness in a third lateral region, at least a portion of the third lateral region positioned longitudinally adjacent to at least a portion of the first lateral region; anda buried oxide layer positioned on the silicon semiconductor layer, the buried oxide layer having a fourth thickness in a fourth lateral region, the fourth lateral region being longitudinally adjacent to at least a portion of the third lateral region.3. The apparatus of claim 2 , wherein the buried oxide layer includes a hole claim 2 , at least a portion of the hole being longitudinally aligned with at least a portion of the second lateral region.4. The apparatus of claim 3 , further comprising a thermally conductive material positioned in the hole claim 3 , the thermally conductive material ...

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Номер записи: 92
24-03-2022 дата публикации

METHOD OF FABRICATING AN AVALANCHE PHOTODIODE EMPLOYING SINGLE DIFFUSION

Номер: US20220093815A1
Автор: PITTS Oliver, SALEHZADEH EINABAD Omid
Принадлежит: NATIONAL RESEARCH COUNCIL OF CANADA

An avalanche photodiode with a diffused junction and the method for its fabrication are disclosed. The method comprising forming, on a substrate, a first high-doped region and a low-doped region; performing selective area growth (SAG) with in-situ etchant on the low-doped region to grow a SAG structure; and diffusing through the SAG structure to form a second high-doped region in the low-doped region. 1. A method for fabricating an avalanche photodiode comprising:forming, on a substrate, a first high-doped region and a low-doped region;performing selective area growth (SAG) with in-situ etchant on the low-doped region to grow a SAG structure; anddiffusing through the SAG structure to form a second high-doped region in the low-doped region.248.-. (canceled)49. The method of claim 1 , wherein the in-situ etchant is selected from CBrCl claim 1 , CBr claim 1 , CCl claim 1 , CHI claim 1 , HCl claim 1 , CHCl claim 1 , PCl claim 1 , AsCl claim 1 , CHCl claim 1 , or CHCl;wherein the SAG epitaxy is performed in an MOCVD reactor at a growth temperature range of about 550° C. to about 600° C.;wherein the SAG is performed to grow SAG structures using materials that match a lattice of the substrate;{'sub': 2', '2, 'wherein the SAG structure has a thickness of about 150 nm to about 250 nm; and/or wherein the substrate is selected from Si, InP, GaAs, Ge, GaP, GaSb, InAs, SiC, AlO, GaN, or InGaAs.'}50. The method of claim 49 , wherein when the substrate is InP claim 49 , the materials used to perform SAG are selected from InP claim 49 , InGaAs claim 49 , or InGaAsP;wherein when the substrate is Si, the material used to perform SAG is Si; orwherein when the substrate is GaAs, the material used to perform SAG is GaAs.51. The method of claim 1 , wherein when the substrate is InP claim 1 , the absorption layer is formed from InGaAs or InGaAsP; optionally claim 1 , when the substrate is InP claim 1 , the absorption layer has a thickness of about 0.2 μm to about 3.0 μm.52. The method of ...

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Номер записи: 93
24-03-2016 дата публикации

ENHANCED VISIBLE NEAR-INFRARED PHOTODIODE AND NON-INVASIVE PHYSIOLOGICAL SENSOR

Номер: US20160081552A1
Автор: III William J., MacNeish, Wojtczuk Steven J., ZHANG Xuebing
Принадлежит:

Embodiments of the present disclosure include a photodiode that can detect optical radiation at a broad range of wavelengths. The photodiode can be used as a detector of a non-invasive sensor, which can be used for measuring physiological parameters of a monitored patient. The photodiode can be part of an integrated semiconductor structure that generates a detector signal responsive to optical radiation at both visible and infrared wavelengths incident on the photodiode. The photodiode can include a layer that forms part of an external surface of the photodiode, which is disposed to receive the optical radiation incident on the photodiode and pass the optical radiation to one or more other layers of the photodiode. 1. A non-invasive physiological sensor which measures physiological parameters of a monitored patient , the sensor comprising:an input configured to receive a drive signal from a driver circuit;an emitter electrically coupled to the input and configured to emit optical radiation at one or more wavelengths responsive to the drive signal;one or more detectors configured to be positioned proximate to the emitter and tissue of a patient by a sensor housing, the one or more detectors comprising one photodiode that is part of an integrated semiconductor structure, the one photodiode being configured to detect the optical radiation after attenuation by the tissue of the patient and generate a detector signal responsive to the detected optical radiation; andan output electrically coupled to the one or more detectors and configured to output the detector signal,wherein the one photodiode has an external quantum efficiency of at least 20% at wavelengths ranging from 450 nm to 1400 nm.2. The sensor of claim 1 , wherein the one photodiode is configured to generate the detector signal with a signal strength sufficient for the detector signal to be usable to determine measurement values for one or more physiological parameters of the patient from the optical radiation ...

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Номер записи: 94
05-03-2020 дата публикации

PHOTODIODE AND METHOD FOR MANUFACTURING THE SAME

Номер: US20200075786A1
Автор: CHOU CHIA-HSIANG, HUANG JUN-CHIEH
Принадлежит:

A photodiode includes a substrate having a lateral side having an inclined light incidence surface that forms an angle of 45 or 60 degrees with respect to a normal of the substrate; and an epitaxial layer disposed on the substrate. A method for manufacturing a photodiode is provided, including: providing a substrate; forming an epitaxial layer on the substrate; and making a lateral side of the substrate an inclined light incidence surface that forms an angle of 45 or 60 degrees with respect to a normal of the substrate. Another method is also provided, including: providing a substrate; forming an etch stop layer on the substrate; forming an epitaxial layer on the etch stop layer; and applying an agent to etch a lateral side of the substrate to form an inclined light incidence surface having an angle of 45 or 60 degrees with respect to a normal of the substrate. 1. A photodiode , comprising:a substrate, which has a lateral side that forms an inclined light incidence surface, the light incidence surface forming an angle of 45 degrees or 60 degrees with respect to a normal of the substrate; andan epitaxial layer, which is disposed on the substrate.2. The photodiode according to claim 1 , further comprising an etch stop layer claim 1 , which is disposed between the substrate and the epitaxial layer.3. The photodiode according to claim 1 , further comprising an anti-reflection layer claim 1 , which is disposed atop the epitaxial layer claim 1 , the anti-reflection layer comprising a metallic alloy.4. The photodiode according to claim 2 , further comprising an anti-reflection layer claim 2 , which is disposed on the epitaxial layer claim 2 , the anti-reflection layer comprising a metallic alloy.5. The photodiode according to claim 3 , wherein the metallic alloy comprises Ti claim 3 , Pt claim 3 , Au and AuGeNi.6. The photodiode according to claim 4 , wherein the metallic alloy comprises Ti claim 4 , Pt claim 4 , Au and AuGeNi.7. A method for manufacturing a photodiode ...

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Номер записи: 95
05-03-2020 дата публикации

RESONANT CAVITY STRAINED III-V PHOTODETECTOR AND LED ON SILICON SUBSTRATE

Номер: US20200075804A1
Автор: Kim Jeehwan, LI NING, Sadana Devendra K.
Принадлежит:

An optoelectronic device that includes a germanium containing buffer layer atop a silicon containing substrate, and a first distributed Bragg reflector stack of III-V semiconductor material layers on the buffer layer. The optoelectronic device further includes an active layer of III-V semiconductor material present on the first distributed Bragg reflector stack, wherein a difference in lattice dimension between the active layer and the first distributed brag reflector stack induces a strain in the active layer. A second distributed Bragg reflector stack of III-V semiconductor material layers having a may be present on the active layer. 1. A light emitting diode comprising:a first reflector stack of III-V semiconductor material present on a germanium including buffer layer;{'sup': '2', 'a light emission layer of III-V semiconductor material present on the first reflector stack of III-V semiconductor material, wherein a difference in lattice dimension between the light emission layer and the first distributed brag reflector stack of III-V semiconductor material induces a strain in the light emission layer, and having a strain in the light emission layer is without a defect density less than 1,000 defects/cm; and'}a second reflector stack of III-V semiconductor material present on the light emission layer, wherein at least one of the first and second reflector stacks is comprised of an aluminum, gallium and arsenic containing layer, and the light emission layer is comprised of an indium, gallium and arsenic containing layer.2. The light emitting diode of claim 1 , wherein the first reflector stack is doped to a first conductivity type claim 1 , and the second reflector stack is doped to a second conductivity type.3. The light emitting diode of claim 1 , wherein the light emission layer is intrinsic.4. The light emitting diode of claim 3 , wherein a first conductivity type doped region is present between the light emission layer and the first reflector stack.5. The ...

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Номер записи: 96
24-03-2016 дата публикации

INFRARED IMAGE SENSOR

Номер: US20160087000A1
Автор: BALASEKARAN Sundararajan, Inada Hiroshi
Принадлежит: Sumitomo Electric Industries, Ltd.

An infrared image sensor includes a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal; a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage; a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving electrical signal from the photodiode; and a signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal. The photodiode includes an optical absorption layer made of a III-V group compound semiconductor. The optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately. 1. An infrared image sensor comprising:a bias circuit receiving a timing signal, the bias circuit generating a bias voltage having a first value and a second value in response to the timing signal;a semiconductor light-receiving device including a photodiode, the semiconductor light-receiving device receiving the bias voltage;a read-out circuit including a read-out electrode connected to the photodiode, the read-out electrode receiving electrical signal from the photodiode; anda signal processing circuit processing a read-out signal from the read-out circuit synchronously with the timing signal, whereinthe photodiode includes an optical absorption layer made of a III-V group compound semiconductor; andthe optical absorption layer has a type II multi quantum well structure including first compound semiconductor layers containing antimony as a constituent element and second compound semiconductor layers that are stacked alternately.2. The infrared image sensor according to claim 1 , whereinthe optical absorption layer generates a photocurrent component ...

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Номер записи: 97
23-03-2017 дата публикации

High Temperature Spectrally Selective Thermal Emitter

Номер: US20170085212A1
Автор: Cederberg Jeffrey C., Hensley Joel M., Shaner Eric A., Woolf David N.
Принадлежит:

The present invention enables elective emission from a heterogeneous metasurface that can survive repeated temperature cycling at high temperatures (e.g., greater than 1300 K). Simulations, fabrication and characterization were performed for an exemplary cross-over-a-backplane metasurface consisting of platinum and alumina layers on a sapphire substrate. The structure was stabilized for high temperature operation by an encapsulating alumina layer. The geometry was optimized for integration into a thermophotovoltaic (TPV) system and was designed to have its emissivity matched to the external quantum efficiency spectrum of 0.6 eV InGaAs TPV material. Spectral measurements of the metasurface resulted in a predicted 32% optical-to-electrical power conversion efficiency. The broadly adaptable selective emitter design can be easily scaled for integration with TPV systems. 1. A spectrally selective thermal emitter , comprising:an optically thick metallic backplane,a sub-wavelength dielectric layer deposited on the metallic backplane, andan array of metallic resonator elements having subwavelength periodicity deposited on the dielectric layer,wherein the metallic backplane, dielectric layer, and array of metallic resonator elements have similar coefficients of thermal expansion up to a high temperature and wherein the thermal emitter provides enhanced absorption of incident light at a resonance wavelength.2. The thermal emitter of claim 1 , wherein the high temperature is greater than 1300 K.3. The thermal emitter of claim 1 , wherein the metallic backplane comprises W claim 1 , Ta claim 1 , Pt claim 1 , Mo claim 1 , Hf claim 1 , Ti claim 1 , Zr claim 1 , V claim 1 , Nb claim 1 , Cr claim 1 , Re claim 1 , Ir claim 1 , Fe claim 1 , Ru claim 1 , Os claim 1 , Ni claim 1 , Pd claim 1 , Cu claim 1 , Ag claim 1 , Au claim 1 , Co claim 1 , Rh claim 1 , or alloys thereof.4. The thermal emitter of claim 1 , wherein the dielectric layer comprises Si claim 1 , AlO claim 1 , SiC claim ...

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Номер записи: 98
19-06-2014 дата публикации

SOLAR CELL AND METHOD FOR PRODUCING SOLAR CELL

Номер: US20140166090A1
Автор: Iwata Yasushi, MURAYAMA Koji, Nomura Masanobu, Tomita Kanako
Принадлежит: MURATA MANUFACTURING CO., LTD.

A solar cell that includes a negative electrode made of Al—Nd or the like formed on a substrate, an electron transport layer made of n-type Si or the like, a quantum dot arrangement layer made of graphene or the like, a quantum dot layer, a positive hole transport layer made of p-type Si or the like, and a positive electrode made of ITO or the like are sequentially formed on a surface of the negative electrode. Output electrodes are formed on the positive electrode so that at least a part of the surface of the positive electrode is exposed. The quantum dot layer is constructed such that quantum dots of Si cluster particles are three-dimensionally periodically arranged. The Si cluster particles have an average particle size of 3 nm or less, and the interparticle distance between the Si cluster particles is 1 nm or less. 1. A solar cell comprising:a substrate;a negative electrode on the substrate;an electron transport layer, a quantum dot layer made of an assembly of quantum dots and constructed to absorb solar light, a positive hole transport layer, and a positive electrode made of a light-transmitting material sequentially arranged on a principal surface of the negative electrode; andan output electrode on the positive electrode so that at least a part of a surface of the positive electrode is exposed, whereinthe quantum dot layer is constructed in such a manner that the quantum dots are three-dimensionally periodically arranged silicon cluster particles,the silicon cluster particles have an average particle size of 3 nm or less, and an interparticle distance between the silicon cluster particles is 1 nm or less.2. The solar cell according to claim 1 , wherein the substrate is a material selected from the group consisting of quartz glass claim 1 , nonalkaline glass claim 1 , borosilicate glass claim 1 , alumina claim 1 , gallium arsenic claim 1 , silicon claim 1 , and silicon carbide.3. The solar cell according to claim 1 , wherein the electron transport layer is an ...

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Номер записи: 99
31-03-2022 дата публикации

DEVICE ARCHITECTURES HAVING ENGINEERED STRESSES

Номер: US20220102578A1
Автор: STEINER Myles Aaron
Принадлежит:

The present disclosure relates to a method that includes depositing a spalling layer onto a surface that includes a substrate, depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack, and dividing the stack substantially at a plane positioned within the spalling layer to form a first portion that includes the substrate and a second portion that includes the PV device, where the spalling layer includes a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress, the first layer and the second layer form an interface, the dividing occurs as result of the interface, and the compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero. 1. A method comprising:depositing a spalling layer onto a surface comprising a substrate;depositing a device comprising a III-V material onto the spalling layer, resulting in the forming of a stack; anddividing the stack substantially at a plane positioned within the spalling layer to form a first portion comprising the substrate and a second portion comprising the PV device, wherein:the spalling layer comprises a first layer configured to provide a compressive stress and a second layer configured to provide a tensile stress,the first layer and the second layer form an interface,the dividing occurs as result of the interface, andthe compressive stress and the tensile stress are strain-balanced so that a total strain within the spalling layer is approximately zero.2. The method of claim 1 , wherein the dividing is performed by exposing the full stack to a method comprising at least one of a stress or a force.3. The method of claim 2 , wherein the force comprises a mechanical force.4. The method of claim 2 , wherein the stress is induced by depositing a strained material on the stack.5. The method of claim 1 , wherein the compressive stress is between about zero ...

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Номер записи: 100