METHOD AND STRUCTURE FOR IMPROVING THE ADHESIVE BETWEEN THE INTERMETALLIC DIELECTRIC LAYER AND THE UPPER LAYER
Номер патента: FR2869458B1
Опубликовано: 16-03-2007
Автор(ы): Hung Tsai Liu, Kuo Hsien Cheng, Shao Ta Hsu, Shwang Ming Jeng, Wei Cheng Chu, Yin Lang Wang, Yu Ku Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Опубликовано: 16-03-2007
Автор(ы): Hung Tsai Liu, Kuo Hsien Cheng, Shao Ta Hsu, Shwang Ming Jeng, Wei Cheng Chu, Yin Lang Wang, Yu Ku Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
Memory devices having low permittivity layers and methods of fabricating the same
Номер патента: US9362340B2. Автор: Masayuki Terai,Jung-Moo Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-06-07.