Semiconductor device and method of manufacturing the same
Номер патента: EP1472724A2
Опубликовано: 03-11-2004
Автор(ы): Ichiro Mihara, Takeshi Wakabayashi
Принадлежит: Casio Computer Co Ltd
Опубликовано: 03-11-2004
Автор(ы): Ichiro Mihara, Takeshi Wakabayashi
Принадлежит: Casio Computer Co Ltd
Реферат: A plurality of semiconductor chips (23) are bonded to an adhesive layer (22) formed on a base plate (21). Then, first to third insulating films (31, 35, 39), first and second underlying metal layers (33, 37), first and second re-wirings (34, 38), and a solder ball (41) are collectively formed for the plural semiconductor chips (23). In this case, the first and second underlying metal layers (33, 37) are formed by a sputtering method, and the first and second re-wirings (34, 38) are formed by an electroplating method. Then, a laminate structure consisting of the three insulating films (39, 35, 31), the adhesive layer (22), and the base plate (21) is cut in a region positioned between the adjacent semiconductor chips (23).
Support substrates, methods of fabricating semiconductor packages using the same, and methods of fabricating electronic devices using the same
Номер патента: US11908727B2. Автор: Seung Hwan Lee,Kunsil Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-02-20.