Semiconductor device, memory cell and method of forming the same.

Semiconductor device, memory cell and method of forming the same

Номер патента: US11957070B2
Опубликовано: 09-04-2024
Автор(ы): Bo-Jiun Lin, Shao-Ming Yu, Tung-Ying Lee, Yu-Chao Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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