A thin film semiconductor device and method of manufacturing a thin film semiconductor device
Номер патента: EP1593163A2
Опубликовано: 09-11-2005
Автор(ы): David Thomas Britton, Margit Härting
Принадлежит: University of Cape Town
Опубликовано: 09-11-2005
Автор(ы): David Thomas Britton, Margit Härting
Принадлежит: University of Cape Town
Реферат: A thin film semiconductor in the form of a metal semiconductor field effect transistor, includes a substrate (10) of paper sheet material and a number of thin film active inorganic layers that are deposited in layers on the substrate. The active layers are printed using an offset lithography printing process. A first active layer comprises source (12.1) and drain (12.2) conductors of colloidal silver ink, that are printed directly onto the paper substrate. A second active layer is an intrinsic semiconductor layer (14) of colloidal nanocrystalline silicon ink which is printed onto the first layer. A third active layer comprises a metallic conductor (16) of colloidal silver which is printed onto the second layer to form a gate electrode. This invention extends to other thin film semiconductors such as photovoltaic cells and to a method of manufacturing semiconductors.
Methods of forming an amorphous silicon layer for thin film solar cell applications
Номер патента: WO2011049658A1. Автор: Shuran Sheng,Yong-Kee Chae. Владелец: Applied Materials, Inc.. Дата публикации: 2011-04-28.