Lateral double diffused metal oxide semiconductor device and method of manufacturing the same .

Lateral double diffused metal oxide semiconductor device and method of manufacturing the same

Номер патента: US8710587B2
Опубликовано: 29-04-2014
Автор(ы): Jae-Hyun Yoo, Jong-min Kim, Nam-Chil MOON
Принадлежит: Dongbu HitekCo Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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