Circuit for connecting a first node to a second or third node depending on the potential of the latter, for controlling the potential of an isolation area in an integrated circuit depending on the substrate voltage
Номер патента: DE69127359D1
Опубликовано: 25-09-1997
Автор(ы): Natale Aiello, Sergio Palara
Принадлежит: CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Опубликовано: 25-09-1997
Автор(ы): Natale Aiello, Sergio Palara
Принадлежит: CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Via-first process for connecting a contact and a gate electrode
Номер патента: US20210265202A1. Автор: Mei-Yun Wang,Chao-Hsun Wang,Kuo-Yi Chao,Wang-Jung HSUEH. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-08-26.