Irradiation for rapid turn-off reverse blocking diode thyristor
Номер патента: CA1085964A
Опубликовано: 16-09-1980
Автор(ы): Chang K. Chu, John Bartko, Patrick E. Felice
Принадлежит: Westinghouse Electric Corp
Опубликовано: 16-09-1980
Автор(ы): Chang K. Chu, John Bartko, Patrick E. Felice
Принадлежит: Westinghouse Electric Corp
Реферат: IRRADIATION FOR RAPID TURN-OFF REVERSE BLOCKING DIODE THYRISTOR ABSTRACT OF THE DISCLOSURE The turn-off time of a reverse blocking diode thyristor is decreased without significantly effecting other electrical characteristics by irradiating with a radiation source to a dosage corresponding to between about 4 x 1013 and about 2 x 1014 electrons/cm2 and preferably to between about 6 x 1013 and about 2 x 1014 electrons/cm2 with 2 MeV electron radiation source. Preferably the radiation source is electron radiation with an energy greater than 1 MeV.
Procedure and apparatus for rapid thermal annealing of implanted semiconductors
Номер патента: CA2015411C. Автор: Bertram Schwartz,Shobha Singh,LeGrand G. Van Uitert,George J. Zydzik,Karen A. Grim. Владелец: American Telephone and Telegraph Co Inc. Дата публикации: 1994-03-15.