Method for production of a layer of silicon carbide or a nitride of a group iii element on a suitable substrate
Номер патента: EP1476898A1
Опубликовано: 17-11-2004
Автор(ы): Andre Leycuras
Принадлежит: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
Опубликовано: 17-11-2004
Автор(ы): Andre Leycuras
Принадлежит: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS
Реферат: The invention relates to an intermediate product in the production of optical, electronic or opto-electronic components, comprising a crystalline layer of cubic silicon carbide, or of a nitride of an element of group III, such as AlN, InN or GaN on a monocrystalline substrate. The substrate is made from silicon/germanium, the germanium being of an atomic proportion of from 5 to 90 % inclusive.
Method for fabricating a gate mask of a semiconductor device
Номер патента: US7309627B2. Автор: Osamu Kato. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 2007-12-18.