Россия, г. Королев.

eburdiyg@gmail.com

8 (903) 781-84-63

Gate contact over active regions

Номер патента: US20210249270A1
Опубликовано: 12-08-2021
Автор(ы): Anchuan Wang, Dong Wu, Gaurav Thareja, Keyvan Kashefizadeh, Sanjay Natarajan, Sean M. Seutter, Xikun Wang
Принадлежит: Applied Materials Inc
Получить PDF файл: Открыть в новом окне

Вам могут быть интересны следующие патенты

Рисунок 1. Взаимосвязь патентов (ближайшие 20).

Gate contact over active processes

Номер патента: US20200258744A1. Автор: Xikun Wang,Dong Wu,Sanjay Natarajan,Sean M. Seutter,Anchuan Wang,Gaurav Thareja,Keyvan Kashefizadeh. Владелец: Applied Materials Inc. Дата публикации: 2020-08-13.

Gate contact structure over active gate and method to fabricate same

Номер патента: US09461143B2. Автор: Tahir Ghani,Abhijit Jayant Pethe,Mark Bohr,Harry Gomez,Annalisa Cappellani,Clair Webb. Владелец: Intel Corp. Дата публикации: 2016-10-04.

Negative capacitance integration through a gate contact

Номер патента: US20190115444A1. Автор: Steven Bentley,Puneet Harischandra Suvarna,Rohit Galatage. Владелец: Globalfoundries Inc. Дата публикации: 2019-04-18.

Gate contact structure positioned above an active region of a transistor device

Номер патента: US10243053B1. Автор: Ruilong Xie,Chanro Park,Andre Labonte. Владелец: Globalfoundries Inc. Дата публикации: 2019-03-26.

Reliable gate contacts over active areas

Номер патента: US20190259869A1. Автор: Ravikumar Ramachandran,Myung-Hee Na,Albert M. Chu,Emre Alptekin,Eric Eastman. Владелец: International Business Machines Corp. Дата публикации: 2019-08-22.

Reliable gate contacts over active areas

Номер патента: US20190097016A1. Автор: Ravikumar Ramachandran,Myung-Hee Na,Albert M. Chu,Emre Alptekin,Eric Eastman. Владелец: International Business Machines Corp. Дата публикации: 2019-03-28.

Gate Contact Over Active Enabled by Alternative Spacer Scheme and Claw-Shaped Cap

Номер патента: US20200135886A1. Автор: Veeraraghavan Basker,Andrew Greene,Junli Wang,Kisik Choi,Su Chen Fan,Gangadhara Raja MUTHINTI,Victor W.C. Chan. Владелец: International Business Machines Corp. Дата публикации: 2020-04-30.

Forming a gate contact in the active area

Номер патента: US09905671B2. Автор: Kangguo Cheng,Ruilong Xie,Tenko Yamashita. Владелец: International Business Machines Corp. Дата публикации: 2018-02-27.

Gate contact structure of FinFET

Номер патента: US09761677B2. Автор: Chi-Wen Liu,Chao-Hsiung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-09-12.

Forming a gate contact in the active area

Номер патента: US10170583B2. Автор: Kangguo Cheng,Ruilong Xie,Tenko Yamashita. Владелец: International Business Machines Corp. Дата публикации: 2019-01-01.

FinFET structure having a gate contact above a metal gate and straddling the boundary of an active region

Номер патента: US12148834B2. Автор: Miao Xu,Xinfang Liu,Yanxiang Liu. Владелец: Huawei Technologies Co Ltd. Дата публикации: 2024-11-19.

Method of forming a gate contact structure for a semiconductor device

Номер патента: US09853110B2. Автор: Xunyuan Zhang,Ruilong Xie,Sean X. Lin. Владелец: Globalfoundries Inc. Дата публикации: 2017-12-26.

Gate contact with vertical isolation from source-drain

Номер патента: US09935168B2. Автор: BALASUBRAMANIAN Pranatharthiharan,David V. Horak,Ruilong Xie,Shom S. Ponoth. Владелец: International Business Machines Corp. Дата публикации: 2018-04-03.

Gate contact with vertical isolation from source-drain

Номер патента: US09614047B2. Автор: BALASUBRAMANIAN Pranatharthiharan,David V. Horak,Ruilong Xie,Shom S. Ponoth. Владелец: International Business Machines Corp. Дата публикации: 2017-04-04.

Methods of forming a gate contact structure for a transistor

Номер патента: US20180315821A1. Автор: CHENG Chi,Hao Tang,Lars W. Liebmann,Ruilong Xie,Daniel Chanemougame,Mark V. Raymond. Владелец: Globalfoundries Inc. Дата публикации: 2018-11-01.

Gate contact with vertical isolation from source-drain

Номер патента: US20160260812A1. Автор: BALASUBRAMANIAN Pranatharthiharan,David V. Horak,Ruilong Xie,Shom S. Ponoth. Владелец: International Business Machines Corp. Дата публикации: 2016-09-08.

Gate contact with vertical isolation from source-drain

Номер патента: US20150357409A1. Автор: BALASUBRAMANIAN Pranatharthiharan,David V. Horak,Ruilong Xie,Shom S. Ponoth. Владелец: International Business Machines Corp. Дата публикации: 2015-12-10.

Gate contact over active regions

Номер патента: US20210249270A1. Автор: Xikun Wang,Dong Wu,Sanjay Natarajan,Sean M. Seutter,Anchuan Wang,Gaurav Thareja,Keyvan Kashefizadeh. Владелец: Applied Materials Inc. Дата публикации: 2021-08-12.

Method for forming fin field effect transistor (finfet) device structure with conductive layer between gate and gate contact

Номер патента: US20200058794A1. Автор: Mei-Yun Wang,Chen-Yuan Kao,Chao-Hsun Wang,Kuo-Yi Chao,Rueijer Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2020-02-20.

Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains

Номер патента: US20190198393A1. Автор: Theodorus E. Standaert,Kangguo Cheng,Junli Wang,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2019-06-27.

FABRICATION OF SELF-ALIGNED GATE CONTACTS AND SOURCE/DRAIN CONTACTS DIRECTLY ABOVE GATE ELECTRODES AND SOURCE/DRAINS

Номер патента: US20190198394A1. Автор: Cheng Kangguo,Basker Veeraraghavan S.,Wang Junli,STANDAERT Theodorus E.. Владелец: . Дата публикации: 2019-06-27.

FABRICATION OF SELF-ALIGNED GATE CONTACTS AND SOURCE/DRAIN CONTACTS DIRECTLY ABOVE GATE ELECTRODES AND SOURCE/DRAINS

Номер патента: US20180211874A1. Автор: Cheng Kangguo,Basker Veeraraghavan S.,Wang Junli,STANDAERT Theodorus E.. Владелец: . Дата публикации: 2018-07-26.

FABRICATION OF SELF-ALIGNED GATE CONTACTS AND SOURCE/DRAIN CONTACTS DIRECTLY ABOVE GATE ELECTRODES AND SOURCE/DRAINS

Номер патента: US20180211875A1. Автор: Cheng Kangguo,Basker Veeraraghavan S.,Wang Junli,STANDAERT Theodorus E.. Владелец: . Дата публикации: 2018-07-26.

FABRICATION OF SELF-ALIGNED GATE CONTACTS AND SOURCE/DRAIN CONTACTS DIRECTLY ABOVE GATE ELECTRODES AND SOURCE/DRAINS

Номер патента: US20190341309A1. Автор: Cheng Kangguo,Basker Veeraraghavan S.,Wang Junli,STANDAERT Theodorus E.. Владелец: . Дата публикации: 2019-11-07.

Fabrication of self-aligned gate contacts and source/drain contacts directly above gate electrodes and source/drains

Номер патента: US11121032B2. Автор: Theodorus E. Standaert,Kangguo Cheng,Junli Wang,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2021-09-14.

Methods of forming a gate contact structure for a transistor

Номер патента: US10297452B2. Автор: Hui Zang,Kangguo Cheng,Ruilong Xie,Tenko Yamashita,Chun-Chen Yeh. Владелец: Globalfoundries Inc. Дата публикации: 2019-05-21.

Methods of forming a gate contact for a semiconductor device above the active region

Номер патента: US09899321B1. Автор: Hoon Kim,Ruilong Xie,Chanro Park,Min Gyu Sung. Владелец: Globalfoundries Inc. Дата публикации: 2018-02-20.

Semiconductor device having self-aligned gate contacts

Номер патента: US09941129B2. Автор: Josephine B. Chang,Michael A. Guillorn,Paul Chang. Владелец: International Business Machines Corp. Дата публикации: 2018-04-10.

Semiconductor device having self-aligned gate contacts

Номер патента: US09484205B2. Автор: Josephine B. Chang,Michael A. Guillorn,Paul Chang. Владелец: International Business Machines Corp. Дата публикации: 2016-11-01.

Gate contact structure over active gate

Номер патента: EP3514836B1. Автор: Tahir Ghani,Abhijit Jayant Pethe,Mark Bohr,Harry Gomez,Clair Webb. Владелец: Intel Corp. Дата публикации: 2023-09-20.

Gate contact structure over active gate and method to fabricate same

Номер патента: TW201417290A. Автор: Tahir Ghani,Abhijit Jayant Pethe,Mark Bohr,Clair M Webb,Harry Gomez,Annalisa Cappellani. Владелец: Intel Corp. Дата публикации: 2014-05-01.

Gate contact structure over active gate and method to fabricate same

Номер патента: KR102149451B1. Автор: 아비지트 자얀트 페더,타히르 가니,마크 보어,클레르 웨브,해리 고메즈,안날리사 카펠라니. Владелец: 인텔 코포레이션. Дата публикации: 2020-08-28.

Gate contact structure over active gate and method to fabricate same

Номер патента: EP3514836A2. Автор: Tahir Ghani,Abhijit Jayant Pethe,Mark Bohr,Harry Gomez,Clair Webb. Владелец: Intel Corp. Дата публикации: 2019-07-24.

Gate contact structure over active gate and method to fabricate same

Номер патента: CN104584222A. Автор: A·J·派特,T·加尼,M·博尔,C·韦布,H·戈麦斯,A·卡佩拉尼. Владелец: Intel Corp. Дата публикации: 2015-04-29.

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

Номер патента: US20190115257A1. Автор: Ghani Tahir,Cappellani Annalisa,Pethe Abhijit Jayant,Webb Clair,BOHR Mark,GOMEZ Harry. Владелец: . Дата публикации: 2019-04-18.

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

Номер патента: US20210210385A1. Автор: Ghani Tahir,Cappellani Annalisa,Pethe Abhijit Jayant,Webb Clair,BOHR Mark,GOMEZ Harry. Владелец: . Дата публикации: 2021-07-08.

Gate contact structure over active gate and method to fabricate same

Номер патента: KR101682317B1. Автор: 아비지트 자얀트 페더,타히르 가니,마크 보어,클레르 웨브,해리 고메즈,안날리사 카펠라니. Владелец: 인텔 코포레이션. Дата публикации: 2016-12-05.

Gate contact structure over active gate and method to fabricate same

Номер патента: EP2898532A1. Автор: Tahir Ghani,Abhijit Jayant Pethe,Mark Bohr,Harry Gomez,Annalisa Cappellani,Clair Webb. Владелец: Intel Corp. Дата публикации: 2015-07-29.

Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors

Номер патента: US20200258779A1. Автор: Kangguo Cheng,Juntao Li,Dexin Kong,Zhenxing Bi. Владелец: International Business Machines Corp. Дата публикации: 2020-08-13.

Field effect transistor devices with self-aligned source/drain contacts and gate contacts positioned over active transistors

Номер патента: US10707127B2. Автор: Kangguo Cheng,Juntao Li,Dexin Kong,Zhenxing Bi. Владелец: International Business Machines Corp. Дата публикации: 2020-07-07.

METHODS OF FORMING A GATE CONTACT STRUCTURE ABOVE AN ACTIVE REGION OF A TRANSISTOR

Номер патента: US20180315822A1. Автор: Tang Hao,Xie Ruilong,Liebmann Lars W.,Raymond Mark V.,Chanemougame Daniel,CHI Cheng. Владелец: . Дата публикации: 2018-11-01.

Methods of forming a gate contact structure above an active region of a transistor

Номер патента: US10483363B2. Автор: CHENG Chi,Hao Tang,Lars W. Liebmann,Ruilong Xie,Daniel Chanemougame,Mark V. Raymond. Владелец: Globalfoundries Inc. Дата публикации: 2019-11-19.

Integrated circuit (IC) structure for use in e.g. microprocessor, has continuous metallic portion that is formed between gate contact and metal

Номер патента: DE102013105608B3. Автор: Chi-Wen Liu,Chao-Hsiung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2014-02-13.

SELF-ALIGNED BOTTOM UP GATE CONTACT AND TOP DOWN SOURCE-DRAIN CONTACT STRUCTURE IN THE PREMETALLIZATION DIELECTRIC OR INTERLEVEL DIELECTRIC LAYER OF AN INTEGRATED CIRCUIT

Номер патента: US20170222018A1. Автор: Zhang John Hongguang. Владелец: STMicroelectronics, Inc.. Дата публикации: 2017-08-03.

SELF-ALIGNED BOTTOM-UP-GATE CONTACT AND TOP-DOWN SOURCE-DRAIN CONTACT STRUCTURE IN THE PREMETALIZED DIELECTRIC LAYER OR INTERMEDIATE DIELECTRIC LAYER OF AN INTEGRATED CIRCUIT

Номер патента: DE102015120483A1. Автор: John H. Zhang. Владелец: STMicroelectronics lnc USA. Дата публикации: 2016-12-15.

Self-aligned bottom up gate contact and top down source-drain contact structure in the premetallization dielectric or interlevel dielectric layer of an integrated circuit

Номер патента: US9679847B2. Автор: John Hongguang Zhang. Владелец: STMicroelectronics lnc USA. Дата публикации: 2017-06-13.

NEGATIVE CAPACITANCE INTEGRATION THROUGH A GATE CONTACT

Номер патента: US20190115444A1. Автор: Bentley Steven,Suvarna Puneet Harischandra,Galatage Rohit. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2019-04-18.

Gate contact with vertical isolation from source-drain

Номер патента: US20170170266A1. Автор: BALASUBRAMANIAN Pranatharthiharan,David V. Horak,Ruilong Xie,Shom S. Ponoth. Владелец: International Business Machines Corp. Дата публикации: 2017-06-15.

METHODS OF FORMING A GATE CONTACT STRUCTURE FOR A TRANSISTOR

Номер патента: US20180315821A1. Автор: Tang Hao,Xie Ruilong,Liebmann Lars W.,Raymond Mark V.,Chanemougame Daniel,CHI Cheng. Владелец: . Дата публикации: 2018-11-01.

Gate contact structure for a transistor device

Номер патента: US20190386107A1. Автор: CHENG Chi,Hao Tang,Lars W. Liebmann,Ruilong Xie,Daniel Chanemougame,Mark V. Raymond. Владелец: Globalfoundries Inc. Дата публикации: 2019-12-19.

Gate contact structure for FinFET

Номер патента: US9385069B2. Автор: Chi-Wen Liu,Chao-Hsiung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-07-05.

Forming a gate contact in the active area

Номер патента: US20170054004A1. Автор: Kangguo Cheng,Ruilong Xie,Tenko Yamashita. Владелец: International Business Machines Corp. Дата публикации: 2017-02-23.

Device with controlled gate contact profile

Номер патента: US20240332063A1. Автор: PENG Wang,Jyun-De Wu,Huan-Just Lin,Te-Chih Hsiung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-03.

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

Номер патента: US20190123162A1. Автор: Hui Zang,Lei Sun,Lars W. Liebmann,Ruilong Xie,Heimanu Niebojewski,Daniel Chanemougame,Youngtag Woo,Bipul C. Paul,Xuelian ZHU. Владелец: Globalfoundries Inc. Дата публикации: 2019-04-25.

Gate contacts for semiconductor devices

Номер патента: US20240332293A1. Автор: Dureseti Chidambarrao,Brent A. Anderson,Ruilong Xie,Albert M. Chu. Владелец: International Business Machines Corp. Дата публикации: 2024-10-03.

Platform and method of operating for integrated end-to-end gate contact process

Номер патента: US20190295904A1. Автор: Robert Clark. Владелец: Tokyo Electron Ltd. Дата публикации: 2019-09-26.

Gate contact structures and cross-coupled contact structures for transistor devices

Номер патента: US12002869B2. Автор: Hui Zang,Lei Sun,Lars W. Liebmann,Ruilong Xie,Heimanu Niebojewski,Daniel Chanemougame,Youngtag Woo,Bipul C. Paul,Xuelian ZHU. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-06-04.

Etch profile control of gate contact opening

Номер патента: US12057345B2. Автор: PENG Wang,Jyun-De Wu,Huan-Just Lin,Te-Chih Hsiung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-06.

Scaled gate contact and source/drain cap

Номер патента: US20210066464A1. Автор: Hui Zang,Ruilong Xie,Jae Gon Lee. Владелец: Globalfoundries Inc. Дата публикации: 2021-03-04.

Semiconductor device having a gate that is buried in an active region and a device isolation film

Номер патента: US09685540B2. Автор: Kang Yoo SONG. Владелец: SK hynix Inc. Дата публикации: 2017-06-20.

Semiconductor device having a gate that is buried in an active region and a device isolation film

Номер патента: US9401301B2. Автор: Kang Yoo SONG. Владелец: SK hynix Inc. Дата публикации: 2016-07-26.

Gate structure and method with enhanced gate contact and threshold voltage

Номер патента: US12119403B2. Автор: Wei-Shuo HO,Yen-Ming Peng,Max Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Gate Structure and Method with Enhanced Gate Contact and Threshold Voltage

Номер патента: US20240021727A1. Автор: Wei-Shuo HO,Yen-Ming Peng,Max Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-18.

Gate contact over active region in cell

Номер патента: WO2019226229A1. Автор: Richard T. Schultz. Владелец: Advanced Micro Devices, Inc.. Дата публикации: 2019-11-28.

Gate contact over active region in cell

Номер патента: US20190363167A1. Автор: Richard T. Schultz. Владелец: Advanced Micro Devices Inc. Дата публикации: 2019-11-28.

Gate contact over active region in cell

Номер патента: US20210028288A1. Автор: Richard T. Schultz. Владелец: Advanced Micro Devices Inc. Дата публикации: 2021-01-28.

Gate contact over active region in cell

Номер патента: EP3803962A1. Автор: Richard T. Schultz. Владелец: Advanced Micro Devices Inc. Дата публикации: 2021-04-14.

Forming Gate Contact Over Active Free of Metal Recess

Номер патента: US20200066597A1. Автор: Chih-Chao Yang,Kangguo Cheng. Владелец: International Business Machines Corp. Дата публикации: 2020-02-27.

Non-self aligned gate contacts formed over the active region of a transistor

Номер патента: US20200135885A1. Автор: Kangguo Cheng,Ruilong Xie,Chanro Park,Julien Frougier. Владелец: International Business Machines Corp. Дата публикации: 2020-04-30.

Methods of forming a gate contact for a transistor above an active region and the resulting device

Номер патента: US09947589B1. Автор: Lars W. Liebmann,Ruilong Xie,Chanro Park,Nigel G. Cave,Andre P. Labonte,Mark V. Raymond. Владелец: Globalfoundries Inc. Дата публикации: 2018-04-17.

Three-dimensional semiconductor transistor with gate contact in active region

Номер патента: US09691897B2. Автор: Andreas Knorr,Ruilong Xie,Andre Labonte. Владелец: Globalfoundries Inc. Дата публикации: 2017-06-27.

Semiconductor device with a gate contact positioned above the active region

Номер патента: US09735242B2. Автор: Hoon Kim,Ruilong Xie,Chanro Park,Min Gyu Sung. Владелец: Globalfoundries Inc. Дата публикации: 2017-08-15.

Etch profile control of gate contact opening

Номер патента: US20230326978A1. Автор: PENG Wang,Jyun-De Wu,Huan-Just Lin,Te-Chih Hsiung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-12.

Semiconductor device with a gate contact positioned above the active region

Номер патента: US20170110549A1. Автор: Hoon Kim,Ruilong Xie,Chanro Park,Min Gyu Sung. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-20.

Self-aligned gate endcap (SAGE) architecture having gate contacts

Номер патента: US11935892B2. Автор: Walid M. Hafez,Sairam Subramanian. Владелец: Intel Corp. Дата публикации: 2024-03-19.

Self-aligned gate contact formation

Номер патента: US09640625B2. Автор: Jing Wan,Guillaume Bouche,Andy Chih-Hung Wei,Andre P. Labonte,Gabriel Padron Wells. Владелец: Globalfoundries Inc. Дата публикации: 2017-05-02.

Gate contact structure having gate contact layer

Номер патента: US09490317B1. Автор: Ryan Ryoung-Han Kim,Andre Labonte. Владелец: Globalfoundries Inc. Дата публикации: 2016-11-08.

Transistor gate contacts and methods of forming the same

Номер патента: US12119259B2. Автор: Sai-Hooi Yeong,Chi On Chui,Kai-Hsuan LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

Transistor gate contacts

Номер патента: US20240371689A1. Автор: Sai-Hooi Yeong,Chi On Chui,Kai-Hsuan LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

Method and structure for forming gate contact above active area with trench silicide

Номер патента: US09508825B1. Автор: Theodorus E. Standaert,Kangguo Cheng,Junli Wang,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2016-11-29.

Method and structure for forming gate contact above active area with trench silicide

Номер патента: US09508818B1. Автор: Theodorus E. Standaert,Kangguo Cheng,Junli Wang,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2016-11-29.

Self-aligned gate endcap (sage) architecture having gate contacts

Номер патента: US20200286890A1. Автор: Walid M. Hafez,Sairam Subramanian. Владелец: Intel Corp. Дата публикации: 2020-09-10.

Self-aligned gate endcap (sage) architecture having gate contacts

Номер патента: US20240145477A1. Автор: Walid M. Hafez,Sairam Subramanian. Владелец: Intel Corp. Дата публикации: 2024-05-02.

Spacer self-aligned via structures using assisted grating for gate contact or trench contact

Номер патента: US20230290841A1. Автор: Tahir Ghani,Charles H. Wallace,Leonard P. GULER,Tsuan-Chung CHANG,Desalegne B. Teweldebrhan. Владелец: Intel Corp. Дата публикации: 2023-09-14.

Transistor arrangements with stacked trench contacts and gate contacts without gate caps

Номер патента: EP4053890A1. Автор: Oleg Golonzka,Farshid Adibi-rizi,Andy Chih-Hung Wei. Владелец: Intel Corp. Дата публикации: 2022-09-07.

Oxide spacer in a contact over active gate finfet and method of production thereof

Номер патента: US20200083363A1. Автор: Hui Zang,Laertis Economikos,Ruilong Xie,Jiehui SHU. Владелец: Globalfoundries Inc. Дата публикации: 2020-03-12.

Mushroomed via structures for trench contact or gate contact

Номер патента: US20240105599A1. Автор: Tahir Ghani,Leonard P. GULER,Mohit K. HARAN,Desalegne B. Teweldebrhan,Vishal Tiwari. Владелец: Intel Corp. Дата публикации: 2024-03-28.

Contact over active gate structures with conductive trench contact taps for advanced integrated circuit structure fabrication

Номер патента: EP4163968A1. Автор: Florian Gstrein,Gurpreet Singh,Elijah V. KARPOV,Charles H. Wallace,Manish Chandhok,Paul A. Nyhus,Eungnak Han,Leonard P. GULER,Reken Patel,Urusa ALAAN,Mohit HARAN. Владелец: Intel Corp. Дата публикации: 2023-04-12.

Method of manufacturing an integrated circuit device including a fin-type active region

Номер патента: US12015063B2. Автор: Kye-Hyun Baek,Jin-Wook Lee,Hong-bae Park,Chang-yeon LEE,Min-Chan GWAK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

Self-aligned active regions and passivation layer and methods of making the same

Номер патента: US20230387224A1. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Mauricio Manfrini,Hung Wei Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

Self-aligned active regions and passivation layer and methods of making the same

Номер патента: US11817485B2. Автор: Yu-Ming Lin,Sai-Hooi Yeong,Mauricio Manfrini,Hung Wei Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-14.

METHOD OF FORMING AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE REGION AND THE RESULTING DEVICE

Номер патента: US20200212192A1. Автор: Cheng Kangguo,Xie Ruilong,Park Chanro,Frougier Julien. Владелец: . Дата публикации: 2020-07-02.

Contact over active gate structures for advanced integrated circuit structure fabrication

Номер патента: US11031487B2. Автор: Tahir Ghani,Michael L. Hattendorf,Christopher P. Auth,Andrew W. Yeoh,Atul Madhavan. Владелец: Intel Corp. Дата публикации: 2021-06-08.

Methods of forming gate contact structures and cross-coupled contact structures for transistor devices

Номер патента: US20190123162A1. Автор: Hui Zang,Lei Sun,Lars W. Liebmann,Ruilong Xie,Heimanu Niebojewski,Daniel Chanemougame,Youngtag Woo,Bipul C. Paul,Xuelian ZHU. Владелец: Globalfoundries Inc. Дата публикации: 2019-04-25.

Etch profile control of gate contact opening

Номер патента: KR20220043835A. Автор: 펭 왕,테-치 시웅,전-데 우,후안-저스트 린. Владелец: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드. Дата публикации: 2022-04-05.

Platform and method of operating for integrated end-to-end gate contact process

Номер патента: US10784175B2. Автор: Robert Clark. Владелец: Tokyo Electron Ltd. Дата публикации: 2020-09-22.

GATE CONTACT STRUCTURE FOR A TRANSISTOR

Номер патента: US20190378900A1. Автор: Tang Hao,Xie Ruilong,Liebmann Lars W.,Raymond Mark V.,Chanemougame Daniel,CHI Cheng. Владелец: . Дата публикации: 2019-12-12.

Self-aligned gate contact integration with metal resistor

Номер патента: US11056537B2. Автор: Kangguo Cheng,Richard A. Conti,Xin Miao,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2021-07-06.

Methods, apparatus and system for a local interconnect feature over an active region in a finfet device

Номер патента: US20200105597A1. Автор: Haiting Wang,Hui Zang,Andreas Knorr,Ruilong Xie. Владелец: Globalfoundries Inc. Дата публикации: 2020-04-02.

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Номер патента: US20200105906A1. Автор: Ghani Tahir,HATTENDORF Michael L.,AUTH Christopher P.,YEOH Andrew W.,MADHAVAN Atul. Владелец: . Дата публикации: 2020-04-02.

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Номер патента: US20190164765A1. Автор: Ghani Tahir,HATTENDORF Michael L.,AUTH Christopher P.,YEOH Andrew W.,MADHAVAN Atul. Владелец: . Дата публикации: 2019-05-30.

CONTACT OVER ACTIVE GATE STRUCTURES FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Номер патента: US20210234022A1. Автор: Ghani Tahir,HATTENDORF Michael L.,AUTH Christopher P.,YEOH Andrew W.,MADHAVAN Atul. Владелец: . Дата публикации: 2021-07-29.

METHODS, APPARATUS AND SYSTEM FOR A LOCAL INTERCONNECT FEATURE OVER AN ACTIVE REGION IN A FINFET DEVICE

Номер патента: US20200105597A1. Автор: KNORR Andreas,Xie Ruilong,WANG Haiting,Zang Hui. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2020-04-02.

Method of concurrently forming source/drain and gate contacts and related device

Номер патента: US09837402B1. Автор: CHENG Chi,Ruilong Xie. Владелец: Globalfoundries Inc. Дата публикации: 2017-12-05.

Transistors with laterally extended active regions and methods of fabricating same

Номер патента: US20110183482A1. Автор: Min-Hee Cho,Sung-Sam LEE. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2011-07-28.

Semiconductor devices having fin-shaped active regions

Номер патента: US20200243395A1. Автор: Sung-min Kim,Geum-Jong Bae,Dong-won Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-30.

Semiconductor devices having fin-shaped active regions

Номер патента: US10658244B2. Автор: Sung-min Kim,Geum-Jong Bae,Dong-won Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-05-19.

Method of Semiconductor Fabrication with Height Control Through Active Region Profile

Номер патента: US20160240444A1. Автор: Che-Cheng Chang,Po-Chi WU,Yi-Cheng Chao,Jung-Jui Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-18.

Method of semiconductor fabrication with height control through active region profile

Номер патента: US09673112B2. Автор: Che-Cheng Chang,Po-Chi WU,Yi-Cheng Chao,Jung-Jui Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-06.

Preparation method for platform-shaped active region based p-i-n diode string in reconfigurable loop antenna

Номер патента: US20180175160A1. Автор: Liang Zhang,Xiaoxue YIN. Владелец: Xian Keruisheng Innovative Technology Co Ltd. Дата публикации: 2018-06-21.

Semiconductor devices having a convex active region and methods of forming the same

Номер патента: US7544565B2. Автор: Jae-Hwang Sim,Jae-Kwan Park,Won-Cheol Jeong,Yong-Sik Yim,Dong-Hwa Kwak. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-06-09.

Fin end spacer for preventing merger of raised active regions

Номер патента: US20160035875A1. Автор: Viraj Y. Sardesai,Emre Alptekin,Reinaldo A. Vega,Sameer H. Jain,Cung D. Tran. Владелец: International Business Machines Corp. Дата публикации: 2016-02-04.

Fin end spacer for preventing merger of raised active regions

Номер патента: US20160035876A1. Автор: Viraj Y. Sardesai,Emre Alptekin,Reinaldo A. Vega,Sameer H. Jain,Cung D. Tran. Владелец: International Business Machines Corp. Дата публикации: 2016-02-04.

Fin end spacer for preventing merger of raised active regions

Номер патента: US20160035864A1. Автор: Viraj Y. Sardesai,Emre Alptekin,Reinaldo A. Vega,Sameer H. Jain,Cung D. Tran. Владелец: International Business Machines Corp. Дата публикации: 2016-02-04.

Fin end spacer for preventing merger of raised active regions

Номер патента: US20160284598A1. Автор: Viraj Y. Sardesai,Emre Alptekin,Reinaldo A. Vega,Sameer H. Jain,Cung D. Tran. Владелец: International Business Machines Corp. Дата публикации: 2016-09-29.

Method for forming semiconductor substrate with convex shaped active region

Номер патента: US20030157759A1. Автор: Yin-Pin Wang,Hsin Lee. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2003-08-21.

Fin end spacer for preventing merger of raised active regions

Номер патента: US09679993B2. Автор: Viraj Y. Sardesai,Emre Alptekin,Reinaldo A. Vega,Sameer H. Jain,Cung D. Tran. Владелец: International Business Machines Corp. Дата публикации: 2017-06-13.

Fin end spacer for preventing merger of raised active regions

Номер патента: US09601380B2. Автор: Viraj Y. Sardesai,Emre Alptekin,Reinaldo A. Vega,Sameer H. Jain,Cung D. Tran. Владелец: International Business Machines Corp. Дата публикации: 2017-03-21.

Fin end spacer for preventing merger of raised active regions

Номер патента: US09515168B2. Автор: Viraj Y. Sardesai,Emre Alptekin,Reinaldo A. Vega,Sameer H. Jain,Cung D. Tran. Владелец: International Business Machines Corp. Дата публикации: 2016-12-06.

Providing electrical connection between an active region and a conductive layer in a semiconductor device using carbon nanotubes

Номер патента: EP1361608A3. Автор: Gad S. Haase. Владелец: Texas Instruments Inc. Дата публикации: 2004-11-24.

Partial fin on oxide for improved electrical isolation of raised active regions

Номер патента: US20160079397A1. Автор: Kangguo Cheng,Ali Khakifirooz,Terence B. Hook,Henry K. Utomo,Reinaldo A. Vega,Eric C. Harley. Владелец: Globalfoundries Inc. Дата публикации: 2016-03-17.

ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS

Номер патента: US20170062593A1. Автор: Ranade Pushkar. Владелец: . Дата публикации: 2017-03-02.

Contact Over Active Gate Structure

Номер патента: US20200075408A1. Автор: Huixiong Dai,Christopher S. Ngai,Wenhui Wang. Владелец: Applied Materials Inc. Дата публикации: 2020-03-05.

Transistor cell with self-aligned gate contact

Номер патента: EP4327357A1. Автор: John Jianhong ZHU,Giridhar Nallapati,Junjing Bao. Владелец: Qualcomm Inc. Дата публикации: 2024-02-28.

Self-aligned contact and contact over active gate structures

Номер патента: US20200279773A1. Автор: Susmit Singha Roy,Regina FREED,Madhur Sachan,Sanjay Natarajan,Yuriy Shusterman. Владелец: Micromaterials LLC. Дата публикации: 2020-09-03.

Conductive via structures for gate contact or trench contact

Номер патента: US20220392840A1. Автор: Tahir Ghani,Charles H. Wallace,Leonard P. GULER. Владелец: Intel Corp. Дата публикации: 2022-12-08.

Semiconductor structures with backside gate contacts

Номер патента: US12087691B2. Автор: Carl Radens,Lawrence A. Clevenger,Kangguo Cheng,Dechao Guo,Ruilong Xie,Nicolas Loubet,Veeraraghavan S. Basker,Kisik Choi,Julien Frougier. Владелец: International Business Machines Corp. Дата публикации: 2024-09-10.

Backside gate contact

Номер патента: US20240304695A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Lo-Heng Chang,Li-Zhen YU,Chun-Yuan Chen,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-12.

Gate contact structures and cross-coupled contact structures for transistor devices

Номер патента: US20190148240A1. Автор: Hui Zang,Lei Sun,Lars W. Liebmann,Ruilong Xie,Heimanu Niebojewski,Daniel Chanemougame,Youngtag Woo,Bipul C. Paul,Xuelian ZHU. Владелец: Globalfoundries Inc. Дата публикации: 2019-05-16.

Reduced gate top cd with wrap-around gate contact

Номер патента: US20240128345A1. Автор: Ravikumar Ramachandran,Ruilong Xie,Su Chen Fan,Julien Frougier. Владелец: International Business Machines Corp. Дата публикации: 2024-04-18.

Inverse taper via to self-aligned gate contact

Номер патента: EP4109503A1. Автор: Andy Chih-Hung Wei. Владелец: Intel Corp. Дата публикации: 2022-12-28.

Conductive via structures for gate contact or trench contact

Номер патента: EP4099372A1. Автор: Tahir Ghani,Charles Wallace,Leonard GULER. Владелец: Intel Corp. Дата публикации: 2022-12-07.

Self-aligned backside gate contact for backside signal line integration

Номер патента: US20240006315A1. Автор: Ruilong Xie,David Wolpert,Kisik Choi,Reinaldo Vega. Владелец: International Business Machines Corp. Дата публикации: 2024-01-04.

Backside gate contact

Номер патента: US11996461B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Lo-Heng Chang,Li-Zhen YU,Chun-Yuan Chen,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-05-28.

Self-aligned backside gate contact for backside signal line integration

Номер патента: WO2024003212A1. Автор: Ruilong Xie,David Wolpert,Kisik Choi,Reinaldo Vega. Владелец: IBM Deutschland GmbH. Дата публикации: 2024-01-04.

Contact over active gate structures with metal oxide-caped contacts to inhibit shorting

Номер патента: US12087836B2. Автор: Florian Gstrein,Richard Vreeland,Gurpreet Singh,Richard E. Schenker,Manish Chandhok,Nafees KABIR,Rami HOURANI,Tristan A. TRONIC,Eungnak Han,Giselle ELBAZ. Владелец: Intel Corp. Дата публикации: 2024-09-10.

Semiconductor structures over active region and methods of forming the structures

Номер патента: US20200395356A1. Автор: Hui Zang,Jiehui SHU. Владелец: GlobalFoundries US Inc. Дата публикации: 2020-12-17.

Contact over active gate structures with metal oxide-caped contacts to inhibit shorting

Номер патента: US20240047543A1. Автор: Florian Gstrein,Richard Vreeland,Gurpreet Singh,Richard E. Schenker,Manish Chandhok,Nafees KABIR,Rami HOURANI,Tristan A. TRONIC,Eungnak Han,Giselle ELBAZ. Владелец: Intel Corp. Дата публикации: 2024-02-08.

Contact over active gate structures with metal oxide-caped contacts to inhibit shorting

Номер патента: US11837644B2. Автор: Florian Gstrein,Richard Vreeland,Gurpreet Singh,Richard E. Schenker,Manish Chandhok,Nafees KABIR,Rami HOURANI,Tristan A. TRONIC,Eungnak Han,Giselle ELBAZ. Владелец: Intel Corp. Дата публикации: 2023-12-05.

Contact over active gate structures with conductive gate taps for advanced integrated circuit structure fabrication

Номер патента: US20240120397A1. Автор: Elliot Tan. Владелец: Intel Corp. Дата публикации: 2024-04-11.

Contact over active gate structures with conductive gate taps for advanced integrated circuit structure fabrication

Номер патента: US11888043B2. Автор: Elliot Tan. Владелец: Intel Corp. Дата публикации: 2024-01-30.

Semiconductor device including active region and gate structure

Номер патента: US20210043763A1. Автор: Jinbum Kim,Dongil Bae,Joohee JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-11.

Semiconductor device including active region and gate structure

Номер патента: US20220231159A1. Автор: Jinbum Kim,Dongil Bae,Joohee JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-07-21.

Semiconductor device including active region and gate structure

Номер патента: US11990549B2. Автор: Jinbum Kim,Dongil Bae,Joohee JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-21.

Method for isolating active regions in germanium-based mos device

Номер патента: US20150031188A1. Автор: Min Li,Ming Li,Xing Zhang,Ru Huang,Xia An. Владелец: PEKING UNIVERSITY. Дата публикации: 2015-01-29.

Methods of forming a gate contact above an active region of a semiconductor device

Номер патента: US09780178B2. Автор: Andreas Knorr,Ruilong Xie,Andre Labonte. Владелец: Globalfoundries Inc. Дата публикации: 2017-10-03.

Method and apparatus for placing a gate contact inside an active region of a semiconductor

Номер патента: US09941278B2. Автор: Xunyuan Zhang,Ruilong Xie,Andre Labonte. Владелец: Globalfoundries Inc. Дата публикации: 2018-04-10.

Method and apparatus for placing a gate contact inside a semiconductor active region having high-k dielectric gate caps

Номер патента: US09824921B1. Автор: Xunyuan Zhang,Ruilong Xie,Andre Labonte. Владелец: Globalfoundries Inc. Дата публикации: 2017-11-21.

Normally-off mesfet device with stacked gate contact

Номер патента: US20240038869A1. Автор: Farshid Raissi. Владелец: Iii V Technologies GmbH. Дата публикации: 2024-02-01.

GATE CONTACT OVER ACTIVE REGION IN CELL

Номер патента: US20210028288A1. Автор: Schultz Richard T.. Владелец: . Дата публикации: 2021-01-28.

GATE CONTACT OVER ACTIVE REGION IN CELL

Номер патента: US20190363167A1. Автор: Schultz Richard T.. Владелец: . Дата публикации: 2019-11-28.

Nanosheet with buried gate contact

Номер патента: US20210202749A1. Автор: Takashi Ando,Pouya Hashemi,Alexander Reznicek,ChoongHyun Lee,Jingyun Zhang. Владелец: International Business Machines Corp. Дата публикации: 2021-07-01.

Semiconductor device with well resistor and alternated insulating and active regions between input and output terminals

Номер патента: US09786738B2. Автор: Kiyoshi Hayashi. Владелец: Renesas Electronics Corp. Дата публикации: 2017-10-10.

Integrated circuit comprising components, for example NMOS transistors, having active regions with relaxed compressive stresses

Номер патента: US09899476B2. Автор: Pascal Fornara,Christian Rivero,Guilhem Bouton. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2018-02-20.

Semiconductor devices including a gate structure between active regions, and methods of forming semiconductor devices including a gate structure between active regions

Номер патента: US20140070291A1. Автор: Jin-Woo Lee,Ja-Young Lee,Seung-Ho Kim,Tae-Yong Song,Hyun-Mi Ji. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-03-13.

Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same

Номер патента: US20190296018A1. Автор: Ho Lee,Sang Woo Lee,Chankyung Kim,Jaehong MIN,Junsoo Kim,Minhee Cho,Sangwuk PARK,Woo Bin Song,Hei Seung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2019-09-26.

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

Номер патента: US11862476B2. Автор: Ho Lee,Sang Woo Lee,Chankyung Kim,Jaehong MIN,Junsoo Kim,Minhee Cho,Sangwuk PARK,Woo Bin Song,Hei Seung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-01-02.

Memory device having recessed active region

Номер патента: US11742434B2. Автор: Ming-Chyi Liu,Yong-Sheng Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-29.

Memory device having recessed active region

Номер патента: US20230143082A1. Автор: Ming-Chyi Liu,Yong-Sheng Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-05-11.

Silicide-layer-coupled doped portion of active region and method of fabricating same

Номер патента: US20240234526A1. Автор: Chung-Hui Chen,Jui-Cheng Huang,Tung-Tsun Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-11.

Technique for patterning active regions of transistor elements in a late manufacturing stage

Номер патента: US20190027400A1. Автор: George Mulfinger,Ryan Sporer. Владелец: Globalfoundries Inc. Дата публикации: 2019-01-24.

Memory device having recessed active region

Номер патента: US20210234051A1. Автор: Ming-Chyi Liu,Yong-Sheng Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-07-29.

METHOD AND APPARATUS FOR PLACING A GATE CONTACT INSIDE A SEMICONDUCTOR ACTIVE REGION HAVING HIGH-K DIELECTRIC GATE CAPS

Номер патента: US20180012798A1. Автор: Labonte Andre,Zhang Xunyuan,Xie Ruilong. Владелец: GLOBALFOUDRIES INC.. Дата публикации: 2018-01-11.

Self-aligned via for gate contact of semiconductor devices

Номер патента: WO2016003595A1. Автор: Kern Rim,Stanley Seungchul SONG,Zhongze Wang,Choh fei Yeap. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2016-01-07.

SEMICONDUCTOR DEVICE WITH RECESSED SOURCE/DRAIN CONTACTS AND A GATE CONTACT POSITIONED ABOVE THE ACTIVE REGION

Номер патента: US20190296108A1. Автор: Chi Min-Hwa,Zang Hui. Владелец: . Дата публикации: 2019-09-26.

Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts

Номер патента: US20190319105A1. Автор: Peng Xu,Kangguo Cheng. Владелец: International Business Machines Corp. Дата публикации: 2019-10-17.

Self-aligned backside gate contacts

Номер патента: US20240203792A1. Автор: Tao Li,Ruilong Xie,Tsung-Sheng KANG,Leon Sigal. Владелец: International Business Machines Corp. Дата публикации: 2024-06-20.

Semiconductor device with a gate contact positioned above the active region

Номер патента: US20170110549A1. Автор: Hoon Kim,Ruilong Xie,Chanro Park,Min Gyu Sung. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-20.

NON-SELF ALIGNED GATE CONTACTS FORMED OVER THE ACTIVE REGION OF A TRANSISTOR

Номер патента: US20200135885A1. Автор: Cheng Kangguo,Xie Ruilong,Park Chanro,Frougier Julien. Владелец: . Дата публикации: 2020-04-30.

VERTICAL-TRANSPORT FIELD-EFFECT TRANSISTORS HAVING GATE CONTACTS LOCATED OVER THE ACTIVE REGION

Номер патента: US20190326165A1. Автор: Pandey Shesh Mani,Xie Ruilong,Park Chanro,Soss Steven,Zang Hui,LIEBMANN Lars,Chanemougame Daniel. Владелец: . Дата публикации: 2019-10-24.

Methods of forming a semiconductor device with a gate contact positioned above the active region

Номер патента: US10204994B2. Автор: Guillaume Bouche,Lars W. Liebmann,Ruilong Xie,Chanro Park,David E. Brown,Nigel G. Cave,Andre P. Labonte,Mark V. Raymond. Владелец: Globalfoundries Inc. Дата публикации: 2019-02-12.

Independent gate finfet with backside gate contact

Номер патента: US20180248042A1. Автор: Tenko Yamashita,Terence B. Hook,Joshua M. Rubin. Владелец: International Business Machines Corp. Дата публикации: 2018-08-30.

Independent gate finfet with backside gate contact

Номер патента: US20180248041A1. Автор: Tenko Yamashita,Terence B. Hook,Joshua M. Rubin. Владелец: International Business Machines Corp. Дата публикации: 2018-08-30.

PROTECTIVE LINER BETWEEN A GATE DIELECTRIC AND A GATE CONTACT

Номер патента: US20190013238A1. Автор: Clevenger Lawrence A.,Li Baozhen,Wang Junli,Peterson Kirk D.. Владелец: . Дата публикации: 2019-01-10.

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTIVE LAYER BETWEEN GATE AND GATE CONTACT

Номер патента: US20200058794A1. Автор: WANG Mei-Yun,WANG Chao-Hsun,Chao Kuo-Yi,KAO Chen-Yuan,LIN Rueijer. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2020-02-20.

PROTECTIVE LINER BETWEEN A GATE DIELECTRIC AND A GATE CONTACT

Номер патента: US20180076086A1. Автор: Clevenger Lawrence A.,Li Baozhen,Wang Junli,Peterson Kirk D.. Владелец: . Дата публикации: 2018-03-15.

METHOD FOR FORMING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTIVE LAYER BETWEEN GATE AND GATE CONTACT

Номер патента: US20220271164A1. Автор: WANG Mei-Yun,WANG Chao-Hsun,Chao Kuo-Yi,KAO Chen-Yuan,LIN Rueijer. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2022-08-25.

FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CONDUCTIVE LAYER BETWEEN GATE AND GATE CONTACT

Номер патента: US20190165176A1. Автор: WANG Mei-Yun,WANG Chao-Hsun,Chao Kuo-Yi,KAO Chen-Yuan,LIN Rueijer. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2019-05-30.

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

Номер патента: US20200286890A1. Автор: Hafez Walid M.,SUBRAMANIAN Sairam. Владелец: . Дата публикации: 2020-09-10.

SELF-ALIGNED GATE ENDCAP (SAGE) ARCHITECTURE HAVING GATE CONTACTS

Номер патента: US20220352165A1. Автор: Hafez Walid M.,SUBRAMANIAN Sairam. Владелец: . Дата публикации: 2022-11-03.

SELF-ALIGNED BOTTOM UP GATE CONTACT AND TOP DOWN SOURCE-DRAIN CONTACT STRUCTURE IN THE PREMETALLIZATION DIELECTRIC OR INTERLEVEL DIELECTRIC LAYER OF AN INTEGRATED CIRCUIT

Номер патента: US20160365309A1. Автор: Zhang John Hongguang. Владелец: STMicroelectronics, Inc.. Дата публикации: 2016-12-15.

Gate-contact bypass protection due to reduced contact dimensions in FinFET SRAM

Номер патента: DE102017115107A1. Автор: Shih-Han Huang,Chih-Hung Hsieh. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2019-01-03.

Scaled gate contact and source/drain cap

Номер патента: US20210066464A1. Автор: Hui Zang,Ruilong Xie,Jae Gon Lee. Владелец: Globalfoundries Inc. Дата публикации: 2021-03-04.

SCALED GATE CONTACT AND SOURCE/DRAIN CAP

Номер патента: US20200135872A1. Автор: Lee Jae Gon,Xie Ruilong,Zang Hui. Владелец: . Дата публикации: 2020-04-30.

Transistor Gate Contacts and Methods of Forming the Same

Номер патента: US20220310445A1. Автор: Sai-Hooi Yeong,Chi On Chui,Kai-Hsuan LEE. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-09-29.

Etch profile control of gate contact opening

Номер патента: KR20220043843A. Автор: 펭 왕,후안-저스트 린,테-치 슝,쥰-데 우. Владелец: 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드. Дата публикации: 2022-04-05.

Etch profile control of gate contact opening

Номер патента: US20220102507A1. Автор: PENG Wang,Jyun-De Wu,Huan-Just Lin,Te-Chih Hsiung. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-03-31.

OXIDE SPACER IN A CONTACT OVER ACTIVE GATE FINFET AND METHOD OF PRODUCTION THEREOF

Номер патента: US20200083363A1. Автор: Xie Ruilong,Economikos Laertis,Shu Jiehui,Zang Hui. Владелец: . Дата публикации: 2020-03-12.

Oxide spacer in a contact over active gate finFET and method of production thereof

Номер патента: US10573753B1. Автор: Hui Zang,Laertis Economikos,Ruilong Xie,Jiehui SHU. Владелец: Globalfoundries Inc. Дата публикации: 2020-02-25.

Integrated Assemblies Comprising Voids Between Active Regions and Conductive Shield Plates, and Methods of Forming Integrated Assemblies

Номер патента: US20210005611A1. Автор: SUKEKAWA MITSUNARI,Taketani Hiroaki. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-01-07.

Gate Contact Structure of FinFET

Номер патента: US20160300720A1. Автор: LIU Chi-Wen,Wang Chao-Hsiung. Владелец: . Дата публикации: 2016-10-13.

Conductive layer stack and semiconductor device with a gate contact

Номер патента: US11876051B2. Автор: Che-Hsien LIAO,Yueh Hsu. Владелец: Nanya Technology Corp. Дата публикации: 2024-01-16.

Two-dimensional self-aligned super via integration on self-aligned gate contact

Номер патента: US09887133B2. Автор: CHENG Chi,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2018-02-06.

Two-dimensional self-aligned super via integration on self-aligned gate contact

Номер патента: US09786557B1. Автор: CHENG Chi,Ruilong Xie. Владелец: International Business Machines Corp. Дата публикации: 2017-10-10.

Semiconductor devices including gate contacts

Номер патента: US09768250B2. Автор: Changseop YOON,Min Choul Kim,Hyokki Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-09-19.

Gate structure and method with enhanced gate contact and threshold voltage

Номер патента: US11804547B2. Автор: Wei-Shuo HO,Yen-Ming Peng,Max Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-10-31.

Gate Structure and Method with Enhanced Gate Contact and Threshold Voltage

Номер патента: US20200144422A1. Автор: Ho Wei-Shuo,Peng Yen-Ming,Liu Max. Владелец: . Дата публикации: 2020-05-07.

Gate Structure and Method with Enhanced Gate Contact and Threshold Voltage

Номер патента: US20190165173A1. Автор: Ho Wei-Shuo,Peng Yen-Ming,Liu Max. Владелец: . Дата публикации: 2019-05-30.

Gate contact structure for a trench power mosfet with a split gate configuration

Номер патента: US20220320332A1. Автор: Yean Ching Yong,Maurizio Gabriele Castorina,Voon Cheng NGWAN,Ditto ADNAN,Fadhillawati TAHIR,Churn Weng YIM. Владелец: STMICROELECTRONICS PTE LTD. Дата публикации: 2022-10-06.

Method for fabricating conductive layer stack and method for fabricating semiconductor device with gate contact

Номер патента: US12014955B2. Автор: Che-Hsien LIAO,Yueh Hsu. Владелец: Nanya Technology Corp. Дата публикации: 2024-06-18.

MERGED SOURCE/DRAIN AND GATE CONTACTS IN SRAM BITCELL

Номер патента: US20160163644A1. Автор: Woo Youngtag,Kim Ryan Ryoung-Han. Владелец: . Дата публикации: 2016-06-09.

Method for forming gate contact

Номер патента: TW200411827A. Автор: Peng-Fu Hsu,Ju-Wang Hsu,Yuan-Hung Chiu,Baw-Ching Perng,Ming-Huan Tsai. Владелец: Taiwan Semiconductor Mfg. Дата публикации: 2004-07-01.

Method of semiconductor fabrication with height control through active region profile

Номер патента: US09978652B2. Автор: Che-Cheng Chang,Po-Chi WU,Yi-Cheng Chao,Jung-Jui Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-05-22.

Method of Semiconductor Fabrication with Height Control Through Active Region Profile

Номер патента: US20170309526A1. Автор: Che-Cheng Chang,Po-Chi WU,Yi-Cheng Chao,Jung-Jui Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-10-26.

Semiconductor devices having multi-channel active regions and methods of forming same

Номер патента: US11798949B2. Автор: Daewon HA,Munhyeon Kim,Soonmoon JUNG. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-10-24.

Semiconductor Device Active Region Profile and Method of Forming the Same

Номер патента: US20230117516A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-04-20.

Semiconductor device active region profile and method of forming the same

Номер патента: US20240339541A1. Автор: Wei-Yang Lee,Chia-Pin Lin,Feng-Ching Chu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-10.

Electrical isolation of FinFET active region by selective oxidation of sacrificial layer

Номер патента: US09716174B2. Автор: Ajey Poovannummoottil Jacob,Murat Kerem Akarvardar,Jody A. FRONHEISER. Владелец: Globalfoundries Inc. Дата публикации: 2017-07-25.

TUCKED ACTIVE REGION WITHOUT DUMMY POLY FOR PERFORMANCE BOOST AND VARIATION REDUCTION

Номер патента: US20150001585A1. Автор: Yu Xiaojun,Greene Brian J.,Liang Yue. Владелец: . Дата публикации: 2015-01-01.

Partial fin on oxide for improved electrical isolation of raised active regions

Номер патента: US20160079397A1. Автор: Kangguo Cheng,Ali Khakifirooz,Terence B. Hook,Henry K. Utomo,Reinaldo A. Vega,Eric C. Harley. Владелец: Globalfoundries Inc. Дата публикации: 2016-03-17.

Self-Aligned Passivation of Active Regions

Номер патента: US20190123179A1. Автор: Wann Clement Hsingjen,Yeh Ling-Yen,Shih Chi-Yuan,Tsai Wei-Chun. Владелец: . Дата публикации: 2019-04-25.

FIN STRUCTURE OF SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND MANUFACTURING METHOD OF ACTIVE REGION OF SEMICONDUCTOR DEVICE

Номер патента: US20170154996A1. Автор: Lee Tze-Liang,Yang Chan-Lon,Yu Ming-Hua,Lin Che-Yu. Владелец: . Дата публикации: 2017-06-01.

PREPARATION METHOD FOR PLATFORM-SHAPED ACTIVE REGION BASED P-I-N DIODE STRING IN RECONFIGURABLE LOOP ANTENNA

Номер патента: US20180175160A1. Автор: Zhang Liang,YIN XIAOXUE. Владелец: . Дата публикации: 2018-06-21.

Method of Semiconductor Fabrication with Height Control Through Active Region Profile

Номер патента: US20160240444A1. Автор: Che-Cheng Chang,Po-Chi WU,Yi-Cheng Chao,Jung-Jui Li. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-08-18.

Component, for example nmos transistor, with active region with relaxed compression stresses, and fabrication method

Номер патента: US20150255540A1. Автор: Pascal Fornara,Christian Rivero,Guilhem Bouton. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2015-09-10.

SEMICONDUCTOR DEVICES HAVING FIN-SHAPED ACTIVE REGIONS

Номер патента: US20200243395A1. Автор: KIM Sung-Min,KIM Dong-Won,BAE Geum-Jong. Владелец: . Дата публикации: 2020-07-30.

Gate contact structure

Номер патента: US20230386916A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-30.

CMOS gate contact resistance reduction

Номер патента: US09412759B2. Автор: Arvind Kumar,Anthony I. Chou,Sungjae Lee. Владелец: Globalfoundries Inc. Дата публикации: 2016-08-09.

Gate contact for a semiconductor device and methods of fabrication thereof

Номер патента: US09343543B2. Автор: Helmut Hagleitner,Fabian Radulescu. Владелец: Cree Inc. Дата публикации: 2016-05-17.

Etch profile control of gate contact opening

Номер патента: US20230298934A1. Автор: Jyun-De Wu,Huan-Just Lin,Yi-Chen Wang,Yi-Chun Chang,Te-Chih Hsiung,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Etch profile control of gate contact opening

Номер патента: US12107003B2. Автор: Jyun-De Wu,Huan-Just Lin,Yi-Chen Wang,Yi-Chun Chang,Te-Chih Hsiung,Yuan-Tien Tu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-01.

Gate contact interlayer for hemt devices with self-aligned electrodes

Номер патента: US20220020857A1. Автор: Aurore Constant,Peter Coppens. Владелец: Semiconductor Components Industries LLC. Дата публикации: 2022-01-20.

Spacer self-aligned via structures for gate contact or trench contact

Номер патента: EP4099371A1. Автор: Tahir Ghani,Robert Joachim,Charles H. Wallace,Mohammad Hasan,Leonard P. GULER,Tsuan-Chung CHANG,Shengsi LIU. Владелец: Intel Corp. Дата публикации: 2022-12-07.

Spacer self-aligned via structures using directed selfassembly for gate contact or trench contact

Номер патента: US20230317617A1. Автор: Tahir Ghani,Gurpreet Singh,Charles H. Wallace,Leonard P. GULER. Владелец: Intel Corp. Дата публикации: 2023-10-05.

Gate contact inside gate cut trench

Номер патента: US11916014B2. Автор: CHENG Chi,Takashi Ando,Praneet Adusumilli,Reinaldo Vega. Владелец: International Business Machines Corp. Дата публикации: 2024-02-27.

Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

Номер патента: US20240347465A1. Автор: Hiten KOTHARI,Mohit K. HARAN,Atul Madhavan,Nicholas J. KYBERT. Владелец: Intel Corp. Дата публикации: 2024-10-17.

Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

Номер патента: EP4418312A2. Автор: Hiten KOTHARI,Mohit K. HARAN,Atul Madhavan,Nicholas Kybert. Владелец: Intel Corp. Дата публикации: 2024-08-21.

Method of forming a gate contact in a semiconductor device

Номер патента: US20040043592A1. Автор: Jonathan Davis,Francis Goodwin,Michael Rennie. Владелец: Infineon Technologies Richmond LP. Дата публикации: 2004-03-04.

Contact over active gate structures with metal oxide layers to inhibit shorting

Номер патента: US12080639B2. Автор: Florian Gstrein,Charles H. Wallace,Richard E. Schenker,Manish Chandhok,Rami HOURANI,Paul A. Nyhus,Leonard P. GULER,Mohit K. HARAN,Reken Patel,Curtis Ward. Владелец: Intel Corp. Дата публикации: 2024-09-03.

Method of fabricating self-aligned FET structure having a high temperature stable T-shaped Schottky gate contact

Номер патента: US5550065A. Автор: Saied N. Tehrani,Majid M. Hashemi,Patricia A. Norton. Владелец: Motorola Inc. Дата публикации: 1996-08-27.

Semiconductor device having a gate contact structure capable of reducing interfacial resistance and method of forming the same

Номер патента: US7776687B2. Автор: Jung-Dal Choi,Ju-Hyung Kim,Sang-Hun Jeon,Jong-Sun Sel,Chang-seok Kang,Yoo-Cheol Shin. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2010-08-17.

Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

Номер патента: US20200105672A1. Автор: Hiten KOTHARI,Mohit K. HARAN,Atul Madhavan,Nicholas J. KYBERT. Владелец: Intel Corp. Дата публикации: 2020-04-02.

Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

Номер патента: US20240006322A1. Автор: Hiten KOTHARI,Mohit K. HARAN,Atul Madhavan,Nicholas J. KYBERT. Владелец: Intel Corp. Дата публикации: 2024-01-04.

Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

Номер патента: EP3629369A1. Автор: Hiten KOTHARI,Mohit K. HARAN,Atul Madhavan,Nicholas Kybert. Владелец: Intel Corp. Дата публикации: 2020-04-01.

Contact over active gate structures with metal oxide layers to inhibit shorting

Номер патента: EP3796370A1. Автор: Florian Gstrein,Charles Wallace,Richard Schenker,Manish Chandhok,Rami HOURANI,Leonard GULER,Paul Nyhus,Reken Patel,Curtis Ward,Mohit HARAN. Владелец: Intel Corp. Дата публикации: 2021-03-24.

Semiconductor devices having fin active regions

Номер патента: US09941174B2. Автор: Dohyoung Kim,Kwang-Yong Yang,Ah-young Cheon,Myungil KANG,Yoonhae Kim,Kyungin Choi. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-04-10.

Field effect transistor with elevated active regions and methods of manufacturing the same

Номер патента: US09859422B2. Автор: Akira Inoue,Masatoshi Nishikawa,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-02.

Semiconductor device having storage nodes on active regions and method of fabricating the same

Номер патента: US20090073736A1. Автор: Min-Hee Cho,Seung-Bae Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-03-19.

Source and drain architecture in an active region of a p-channel transistor by tilted implantation

Номер патента: US20130320409A1. Автор: Thilo Scheiper. Владелец: Globalfoundries Inc. Дата публикации: 2013-12-05.

Fin field effect transistor including asymmetric raised active regions

Номер патента: US09553032B2. Автор: Kangguo Cheng,Ali Khakifirooz,Veeraraghavan S. Basker. Владелец: Globalfoundries Inc. Дата публикации: 2017-01-24.

Method for fabricating microelectronic devices with isolation trenches partially formed under active regions

Номер патента: US09437475B2. Автор: Romain Wacquez,Maud Vinet,Sylvie Mignot. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2016-09-06.

Fin field effect transistor including asymmetric raised active regions

Номер патента: US09324870B2. Автор: Kangguo Cheng,Ali Khakifirooz,Veeraraghavan S. Basker. Владелец: Globalfoundries Inc. Дата публикации: 2016-04-26.

Field effect transistor with elevated active regions and methods of manufacturing the same

Номер патента: EP3262688A1. Автор: Akira Inoue,Masatoshi Nishikawa,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2018-01-03.

Field effect transistor with elevated active regions and methods of manufacturing the same

Номер патента: EP3916801A1. Автор: Akira Inoue,Masatoshi Nishikawa,Fumiaki TOYAMA. Владелец: SanDisk Technologies LLC. Дата публикации: 2021-12-01.

METHOD OF FORMING A GATE CONTACT STRUCTURE AND SOURCE/DRAIN CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE

Номер патента: US20170373161A1. Автор: Schroeder Uwe Paul. Владелец: . Дата публикации: 2017-12-28.

Fin field effect transistor including asymmetric raised active regions

Номер патента: US20160218043A1. Автор: Kangguo Cheng,Ali Khakifirooz,Veeraraghavan S. Basker. Владелец: Globalfoundries Inc. Дата публикации: 2016-07-28.

Semiconductor device including a conductive feature over an active region

Номер патента: US11075164B2. Автор: Chung-Te Lin,Hui-Zhong ZHUANG,Li-Chun Tien,Tung-Heng Hsieh,Ting-Wei Chiang,Sheng-Hsiung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-07-27.

Active regions with compatible dielectric layers

Номер патента: US09847420B2. Автор: Pushkar Ranade. Владелец: Intel Corp. Дата публикации: 2017-12-19.

Active regions with compatible dielectric layers

Номер патента: US09646822B2. Автор: Pushkar Ranade. Владелец: Intel Corp. Дата публикации: 2017-05-09.

Active regions with compatible dielectric layers

Номер патента: US09515142B2. Автор: Pushkar Ranade. Владелец: Intel Corp. Дата публикации: 2016-12-06.

Active regions with compatible dielectric layers

Номер патента: US09397165B2. Автор: Pushkar Ranade. Владелец: Intel Corp. Дата публикации: 2016-07-19.

Process for producing contact to GaAs active region

Номер патента: US4301188A. Автор: William C. Niehaus. Владелец: Bell Telephone Laboratories Inc. Дата публикации: 1981-11-17.

Cross-cell local interconnect with buried power rail and gate contact over active region

Номер патента: WO2023099097A1. Автор: Kangguo Cheng,Ruilong Xie,Su Chen Fan,Julien Frougier. Владелец: Ibm United Kingdom Limited. Дата публикации: 2023-06-08.

GATE CONTACT OVER ACTIVE REGION WITH SELF-ALIGNED SOURCE/DRAIN CONTACT

Номер патента: US20200321244A1. Автор: Cheng Kangguo,Xie Ruilong,Fan Su Chen,CHI Cheng. Владелец: . Дата публикации: 2020-10-08.

Transistor with recessed cross couple for gate contact over active region integration

Номер патента: US20190385946A1. Автор: Kangguo Cheng,Guillaume Bouche,Ruilong Xie,Mahender Kumar,Veeraraghavan S. Basker,Youngtag Woo,Jia ZENG. Владелец: International Business Machines Corp. Дата публикации: 2019-12-19.

Vertical-transport field-effect transistors having gate contacts located over the active region

Номер патента: US20190326165A1. Автор: Hui Zang,Ruilong Xie,Chanro Park,Daniel Chanemougame,Lars Liebmann,Shesh Mani Pandey,Steven Soss. Владелец: Globalfoundries Inc. Дата публикации: 2019-10-24.

Co-integration of source-drain trench metal cut and gate-contact-over active device for advanced transistor architectures

Номер патента: US20230282722A1. Автор: Andrew M. Greene,Ruilong Xie,Eric Miller,Junli Wang,Veeraraghavan S. Basker,Su Chen Fan,Julien Frougier,Tushar Gupta,Sagarika Mukesh,Albert M Chu,Prateek HUNDEKAR. Владелец: International Business Machines Corp. Дата публикации: 2023-09-07.

Gate Contact And Via Structures In Semiconductor Devices

Номер патента: US20240282859A1. Автор: Chung-Liang Cheng,Sheng-Tsung Wang,Haung-Lin Chao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-22.

Integrated gate contact and cross-coupling contact formation

Номер патента: US20200152518A1. Автор: Hui Zang,Laertis Economikos,Ruilong Xie,Chanro Park. Владелец: Globalfoundries Inc. Дата публикации: 2020-05-14.

Forming Gate Contact Over Active Free of Metal Recess

Номер патента: US20200066597A1. Автор: Yang Chih-Chao,Cheng Kangguo. Владелец: . Дата публикации: 2020-02-27.

Gate contact and via structures in semiconductor devices

Номер патента: US12002885B2. Автор: Huang-Lin Chao,Chung-Liang Cheng,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-04.

An integrated circuit and a method of making an integrated circuit to provide a gate contact over a diffusion region

Номер патента: TW201011816A. Автор: Marlin Wayne Frederick,Greg Munson Yeric. Владелец: Advanced Risc Mach Ltd. Дата публикации: 2010-03-16.

Field effect transistor devices having gate contacts formed in active region overlapping source/drain contacts

Номер патента: US20190006515A1. Автор: Peng Xu,Kangguo Cheng. Владелец: International Business Machines Corp. Дата публикации: 2019-01-03.

SEMICONDUCTOR DEVICE WITH RECESSED SOURCE/DRAIN CONTACTS AND A GATE CONTACT POSITIONED ABOVE THE ACTIVE REGION

Номер патента: US20190088742A1. Автор: Chi Min-Hwa,Zang Hui. Владелец: . Дата публикации: 2019-03-21.

FIELD EFFECT TRANSISTOR DEVICES HAVING GATE CONTACTS FORMED IN ACTIVE REGION OVERLAPPING SOURCE/DRAIN CONTACTS

Номер патента: US20190157404A1. Автор: Cheng Kangguo,Xu Peng. Владелец: . Дата публикации: 2019-05-23.

Structure and method for finfet device with dielectric gate contact

Номер патента: DE102018115909B4. Автор: Fang Chen,Jhon Jhy Liaw. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2021-04-29.

METHODS OF FORMING A SEMICONDUCTOR DEVICE WITH A GATE CONTACT POSITIONED ABOVE THE ACTIVE REGION

Номер патента: US20180286956A1. Автор: Bouche Guillaume,Brown David E.,Xie Ruilong,Park Chanro,Liebmann Lars W.,Labonté André P.,Raymond Mark V.,Cave Nigel G.. Владелец: . Дата публикации: 2018-10-04.

Self-alignment of gate contacts at local or remote sites

Номер патента: US4221044A. Автор: Gordon C. Godejahn, Jr.,Gary L. Heimbigner. Владелец: Rockwell International Corp. Дата публикации: 1980-09-09.

Extremely thin semiconductor-on-insulator with back gate contact

Номер патента: US20140103436A1. Автор: Bahman Hekmatshoartabari,Ali Khakifirooz,Ghavam G. Shahidi,Davood Shahrjerdi,Stephen W. Bedell. Владелец: International Business Machines Corp. Дата публикации: 2014-04-17.

Systems and methods for dummy gate tie-offs in a self-aligned gate contact (sagc) cell

Номер патента: US20190296126A1. Автор: Kern Rim,John Jianhong ZHU,Stanley Seungchul SONG,Da YANG. Владелец: Qualcomm Inc. Дата публикации: 2019-09-26.

INTEGRATED GATE CONTACT AND CROSS-COUPLING CONTACT FORMATION

Номер патента: US20200152518A1. Автор: Xie Ruilong,Park Chanro,Economikos Laertis,Zang Hui. Владелец: . Дата публикации: 2020-05-14.

Integrated circuit structure having gate contact and method of forming same

Номер патента: US20190006280A1. Автор: Hui Zang,Josef S. Watts. Владелец: Globalfoundries Inc. Дата публикации: 2019-01-03.

INTEGRATED CIRCUIT STRUCTURE HAVING GATE CONTACT AND METHOD OF FORMING SAME

Номер патента: US20180012839A1. Автор: Zang Hui,Watts Josef S.. Владелец: . Дата публикации: 2018-01-11.

ETCH PROFILE CONTROL OF GATE CONTACT OPENING

Номер патента: US20220102199A1. Автор: WANG Peng,Lin Huan-Just,Wu Jyun-De,Hsiung Te-Chih. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2022-03-31.

3d vertical fet with top and bottom gate contacts

Номер патента: US20180197788A1. Автор: Brent A. Anderson,Albert M. Chu. Владелец: International Business Machines Corp. Дата публикации: 2018-07-12.

3D VERTICAL FET WITH TOP AND BOTTOM GATE CONTACTS

Номер патента: US20180308762A1. Автор: ANDERSON Brent A.,Chu Albert M.. Владелец: . Дата публикации: 2018-10-25.

3D vertical FET with top and bottom gate contacts

Номер патента: US10074570B2. Автор: Brent A. Anderson,Albert M. Chu. Владелец: International Business Machines Corp. Дата публикации: 2018-09-11.

Semiconductor structures with backside gate contacts

Номер патента: US20230086033A1. Автор: Carl Radens,Lawrence A. Clevenger,Kangguo Cheng,Dechao Guo,Ruilong Xie,Nicolas Loubet,Veeraraghavan S. Basker,Kisik Choi,Julien Frougier. Владелец: International Business Machines Corp. Дата публикации: 2023-03-23.

Backside gate contact

Номер патента: US20230299167A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Lo-Heng Chang,Li-Zhen YU,Chun-Yuan Chen,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-21.

Inverse taper via to self-aligned gate contact

Номер патента: EP4109503B1. Автор: Andy Chih-Hung Wei. Владелец: Intel Corp. Дата публикации: 2024-02-14.

3D VERTICAL FET WITH TOP AND BOTTOM GATE CONTACTS

Номер патента: US20200020591A1. Автор: ANDERSON Brent A.,Chu Albert M.. Владелец: . Дата публикации: 2020-01-16.

3D VERTICAL FET WITH TOP AND BOTTOM GATE CONTACTS

Номер патента: US20180197787A1. Автор: ANDERSON Brent A.,Chu Albert M.. Владелец: . Дата публикации: 2018-07-12.

SELF-ALIGNED GATE CONTACT

Номер патента: US20170278752A1. Автор: Ryckaert Julien,BOEMMELS Juergen. Владелец: . Дата публикации: 2017-09-28.

SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED GATE CONTACTS

Номер патента: US20160300762A1. Автор: Chang Josephine B.,Guillorn Michael A.,Chang Paul. Владелец: . Дата публикации: 2016-10-13.

Integrated circuit having heterogeneous source/drain and gate contacts

Номер патента: US10580733B2. Автор: Tae-hyung Kim,Jung-Ho Do,Jae-Seung Choi,Dae-Young Moon,Sang-Yeop BAECK,Jae-Hyun Lim,Sang-Shin HAN. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-03-03.

3D vertical FET with top and bottom gate contacts

Номер патента: US10361128B2. Автор: Brent A. Anderson,Albert M. Chu. Владелец: International Business Machines Corp. Дата публикации: 2019-07-23.

3D vertical FET with top and bottom gate contacts

Номер патента: US11031296B2. Автор: Brent A. Anderson,Albert M. Chu. Владелец: International Business Machines Corp. Дата публикации: 2021-06-08.

CONTACT OVER ACTIVE GATE EMPLOYING A STACKED SPACER

Номер патента: US20200066865A1. Автор: Cheng Kangguo. Владелец: . Дата публикации: 2020-02-27.

Contact over active gate employing a stacked spacer

Номер патента: US20200066866A1. Автор: Kangguo Cheng. Владелец: International Business Machines Corp. Дата публикации: 2020-02-27.

SELF-ALIGNED CONTACT AND CONTACT OVER ACTIVE GATE STRUCTURES

Номер патента: US20200279773A1. Автор: Sachan Madhur,Freed Regina,Natarajan Sanjay,Roy Susmit Singha,Shusterman Yuriy. Владелец: Micromaterials LLC. Дата публикации: 2020-09-03.

CONTACT OVER ACTIVE GATE EMPLOYING A STACKED SPACER

Номер патента: US20190312123A1. Автор: Cheng Kangguo. Владелец: . Дата публикации: 2019-10-10.

Contact over active gate employing a stacked spacer

Номер патента: US11183578B2. Автор: Kangguo Cheng. Владелец: International Business Machines Corp. Дата публикации: 2021-11-23.

Memory masking for periphery salicidation of active regions

Номер патента: US20030190781A1. Автор: Loi Nguyen,Robert Hodges. Владелец: SGS Thomson Microelectronics Inc. Дата публикации: 2003-10-09.

Memory masking for periphery salicidation of active regions

Номер патента: US20020020889A1. Автор: Loi Nguyen,Robert Hodges. Владелец: STMicroelectronics lnc USA. Дата публикации: 2002-02-21.

Methods of fabricating nonvolatile memory devices including voids between active regions and related devices

Номер патента: US20120202335A1. Автор: Young-woo Park,Sung-Hoi Hur,Dong-Sik Lee,Jang-Hyun You,Jee-hoon Han,Sang-Ick Joo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2012-08-09.

Methods of fabricating nonvolatile memory devices including voids between active regions and related devices

Номер патента: US20140248755A1. Автор: Young-woo Park,Sung-Hoi Hur,Dong-Sik Lee,Jang-Hyun You,Jee-hoon Han,Sang-Ick Joo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-09-04.

Method for forming shallow trenches of the dual active regions

Номер патента: US09871064B1. Автор: JIN Xu,Quan Jing,Jun Zhu,Xusheng Zhang,Yu Ren,Minjie Chen,Yukun LV. Владелец: Shanghai Huali Microelectronics Corp. Дата публикации: 2018-01-16.

Active region design layout

Номер патента: US09529956B2. Автор: Ming Lei,Cheng-Wei Cheng,Chen-Liang Liao,Yi-Lii Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-12-27.

Standard cell and ic structure with trench isolation through active regions and gate electrodes

Номер патента: US20240274603A1. Автор: Hong Yu,James P. Mazza,Navneet K. Jain,David Charles PRITCHARD. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-08-15.

Standard cell and ic structure with trench isolation through active regions and gate electrodes

Номер патента: EP4418320A1. Автор: Hong Yu,James P. Mazza,Navneet K. Jain,David Charles PRITCHARD. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-08-21.

Forming source/drain zones with a dielectric plug over an isolation region between active regions

Номер патента: US09530683B2. Автор: James Matthew,Jie Sun,Gordon Haller,John Hopkins. Владелец: Micron Technology Inc. Дата публикации: 2016-12-27.

Leakage current reduction for continuous active regions

Номер патента: US20230369320A1. Автор: Wei-Ling Chang,Wei-Ren Chen,Ya-Chi CHOU,Chi-Yu Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-11-16.

Methods of fabricating nonvolatile memory devices including voids between active regions and related devices

Номер патента: US8753955B2. Автор: Young-woo Park,Sung-Hoi Hur,Dong-Sik Lee,Jang-Hyun You,Jee-hoon Han,Sang-Ick Joo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-06-17.

Method for fabricating microelectronic devices with isolation trenches partially formed under active regions

Номер патента: US09437474B2. Автор: Romain Wacquez,Laurent Grenouillet,Maud Vinet,Nicolas Loubet,Yannick Le Tiec. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2016-09-06.

Active region design layout

Номер патента: US20160042109A1. Автор: Ming Lei,Cheng-Wei Cheng,Chen-Liang Liao,Yi-Lii Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-02-11.

Method for forming a shallow trench isolation structure with reduced encroachment of active regions and a semiconductor structure therefrom

Номер патента: US20230197504A1. Автор: Da-Zen Chuang,Chih-Chung Sun. Владелец: Nanya Technology Corp. Дата публикации: 2023-06-22.

Method for forming a shallow trench isolation structure with reduced encroachment of active regions and a semiconductor structure therefrom

Номер патента: US11688624B2. Автор: Da-Zen Chuang,Chih-Chung Sun. Владелец: Nanya Technology Corp. Дата публикации: 2023-06-27.

Semiconductor devices with extended active regions

Номер патента: US8062953B2. Автор: Chong-Cheng Fu,Mark D. Hall,Glenn C. Abeln. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2011-11-22.

Technique for defining active regions of semiconductor devices with reduced lithography effort

Номер патента: US20190043752A1. Автор: Michael Zier,Elliot John Smith. Владелец: Globalfoundries Inc. Дата публикации: 2019-02-07.

SEMICONDUCTOR DEVICE HAVING SELF-ALIGNED GATE CONTACTS

Номер патента: US20150287603A1. Автор: Chang Josephine B.,Guillorn Michael A.,Chang Paul. Владелец: . Дата публикации: 2015-10-08.

Method and Apparatus for Improving Gate Contact

Номер патента: US20130328134A1. Автор: Chih-Yang Yeh,Harry-Hak-Lay Chuang,Bao-Ru Young,Yuh-Jier Mii. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-12-12.

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

Номер патента: US20190259869A1. Автор: Alptekin Emre,Ramachandran Ravikumar,Chu Albert M.,Na Myung-Hee,Eastman Eric. Владелец: . Дата публикации: 2019-08-22.

Backside gate contact, backside gate etch stop layer, and methods of forming same

Номер патента: US12119271B1. Автор: Wei-De Ho,Cheng-Ting Chung,Yi-Bo Liao,Szuya Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-10-15.

GATE CONTACT STRUCTURES AND CROSS-COUPLED CONTACT STRUCTURES FOR TRANSISTOR DEVICES

Номер патента: US20200203497A1. Автор: Xie Ruilong,Sun Lei,Liebmann Lars W.,Zang Hui,Woo Youngtag,Paul Bipul C.,Chanemougame Daniel,NIEBOJEWSKI Heimanu,Zhu Xuelian. Владелец: . Дата публикации: 2020-06-25.

GATE CONTACT STRUCTURES AND CROSS-COUPLED CONTACT STRUCTURES FOR TRANSISTOR DEVICES

Номер патента: US20220416054A1. Автор: Xie Ruilong,Sun Lei,Liebmann Lars W.,Zang Hui,Woo Youngtag,Paul Bipul C.,Chanemougame Daniel,NIEBOJEWSKI Heimanu,Zhu Xuelian. Владелец: . Дата публикации: 2022-12-29.

Integrated circuit with active region jogs

Номер патента: US20230387129A1. Автор: Lei Pan,Kuo-Ji Chen,Xin-Yong WANG,Tian-Yu Xie. Владелец: TSMC Nanjing Co Ltd. Дата публикации: 2023-11-30.

METHODS OF FORMING A GATE CONTACT STRUCTURE FOR A TRANSISTOR

Номер патента: US20190096677A1. Автор: Cheng Kangguo,Yamashita Tenko,Yeh Chun-chen,Xie Ruilong,Zang Hui. Владелец: . Дата публикации: 2019-03-28.

METHOD OF FORMING A GATE CONTACT STRUCTURE FOR A SEMICONDUCTOR DEVICE

Номер патента: US20170125530A1. Автор: Zhang Xunyuan,Xie Ruilong,Lin Sean X.. Владелец: . Дата публикации: 2017-05-04.

NANOSHEET WITH BURIED GATE CONTACT

Номер патента: US20210202749A1. Автор: Ando Takashi,Reznicek Alexander,Zhang Jingyun,Lee Choonghyun,Hashemi Pouya. Владелец: . Дата публикации: 2021-07-01.

Method of forming a gate contact

Номер патента: US9048184B2. Автор: Sumiko Poust,Carol O. Namba,Po-Hsin Liu,Ioulia Smorchkova,Michael Wojtowicz,Ronald Grundbacher. Владелец: Northrop Grumman Systems Corp. Дата публикации: 2015-06-02.

Trench MIS device with thick oxide layer in bottom of gate contact trench

Номер патента: US20040166636A1. Автор: Mohamed Darwish. Владелец: Siliconix Inc. Дата публикации: 2004-08-26.

Trench MIS device with thick oxide layer in bottom of gate contact trench

Номер патента: US20060121676A1. Автор: Mohamed Darwish. Владелец: Siliconix Inc. Дата публикации: 2006-06-08.

Integrated circuit with active region jogs

Номер патента: US11769772B2. Автор: Lei Pan,Kuo-Ji Chen,Xin-Yong WANG,Tian-Yu Xie. Владелец: TSMC Nanjing Co Ltd. Дата публикации: 2023-09-26.

Ic structure with single active region having different doping profile than set of active regions

Номер патента: US20210351283A1. Автор: Hong Yu,James P. Mazza,Anton V. Tokranov,Elizabeth A. Strehlow,Harold Mendoza,Jay A. Mody,Clynn J. Mathew,Yea-Sen Lin. Владелец: GlobalFoundries US Inc. Дата публикации: 2021-11-11.

Structure and method for providing line end extensions for fin-type active regions

Номер патента: US11721761B2. Автор: Kuei-Liang Lu,Ming-Feng Shieh,Chih-Hao Chang,Hsin-Chih Chen,Chang-Yun Chang,Shao-Ming Yu,Yi-Tang LIN,Kai-Tai Chang. Владелец: Mosaid Technologies Inc. Дата публикации: 2023-08-08.

Structure and method for providing line end extensions for fin-type active regions

Номер патента: US09673328B2. Автор: Kuei-Liang Lu,Ming-Feng Shieh,Chih-Hao Chang,Hsin-Chih Chen,Chang-Yun Chang,Shao-Ming Yu,Yi-Tang LIN,Kai-Tai Chang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-06-06.

Gate structure cut after formation of epitaxial active regions

Номер патента: US20160027700A1. Автор: Theodorus E. Standaert,Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie,Johnathan E. Faltermeier. Владелец: International Business Machines Corp. Дата публикации: 2016-01-28.

Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

Номер патента: US20240297215A1. Автор: Yihwan Kim,Sungkeun Lim,Seunghun LEE,Jinbum Kim,Pankwi Park,Unki Kim,Ilgyou Shin,Yuyeong Jo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-09-05.

Gate structure cut after formation of epitaxial active regions

Номер патента: US09633906B2. Автор: Theodorus E. Standaert,Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie,Johnathan E. Faltermeier. Владелец: International Business Machines Corp. Дата публикации: 2017-04-25.

Gate structure cut after formation of epitaxial active regions

Номер патента: US09559009B2. Автор: Theodorus E. Standaert,Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie,Johnathan E. Faltermeier. Владелец: International Business Machines Corp. Дата публикации: 2017-01-31.

Non-planar semiconductor device having hybrid geometry-based active region

Номер патента: EP3084811A1. Автор: Kelin J. Kuhn,Rafael Rios,Seiyon Kim,Fahmida FERDOUSI. Владелец: Intel Corp. Дата публикации: 2016-10-26.

Non-planar semiconductor device having hybrid geometry-based active region

Номер патента: US20200185526A1. Автор: Kelin J. Kuhn,Rafael Rios,Seiyon Kim,Fahmida FERDOUSI. Владелец: Intel Corp. Дата публикации: 2020-06-11.

Non-planar semiconductor device having hybrid geometry-based active region

Номер патента: US20180358467A1. Автор: Kelin J. Kuhn,Rafael Rios,Seiyon Kim,Fahmida FERDOUSI. Владелец: Intel Corp. Дата публикации: 2018-12-13.

Localized implant into active region for enhanced stress

Номер патента: US20130217198A1. Автор: Brent A. Anderson,Edward J. Nowak. Владелец: International Business Machines Corp. Дата публикации: 2013-08-22.

Structure and method for providing line end extensions for fin-type active regions

Номер патента: US20230299203A1. Автор: Kuei-Liang Lu,Ming-Feng Shieh,Chih-Hao Chang,Hsin-Chih Chen,Chang-Yun Chang,Shao-Ming Yu,Yi-Tang LIN,Kai-Tai Chang. Владелец: Mosaid Technologies Inc. Дата публикации: 2023-09-21.

Semiconductor device including barrier layer between active region and semiconductor layer and method of forming the same

Номер патента: US11996443B2. Автор: Yihwan Kim,Sungkeun Lim,Seunghun LEE,Jinbum Kim,Pankwi Park,Unki Kim,Ilgyou Shin,Yuyeong Jo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-05-28.

Gate structure cut after formation of epitaxial active regions

Номер патента: US20170140994A1. Автор: Theodorus E. Standaert,Xiuyu Cai,Kangguo Cheng,Ali Khakifirooz,Ruilong Xie,Johnathan E. Faltermeier. Владелец: International Business Machines Corp. Дата публикации: 2017-05-18.

Fully depleted devices with slots in active regions

Номер патента: US11239087B2. Автор: Kai Sun,Anurag Mittal,Manjunatha G. PRABHU,George J. Kluth,David C. Pritchard,Heng Yang,Lixia LEI,Neha Nayyar,Hongru Ren. Владелец: GlobalFoundries US Inc. Дата публикации: 2022-02-01.

Devices with slotted active regions

Номер патента: US20200058515A1. Автор: Kai Sun,Anurag Mittal,Manjunatha G. PRABHU,George J. Kluth,David C. Pritchard,Heng Yang,Lixia LEI,Neha Nayyar,Hongru Ren. Владелец: Globalfoundries Inc. Дата публикации: 2020-02-20.

Methods of fabricating semiconductor devices including fin-shaped active regions

Номер патента: US20170301581A1. Автор: Bo-Un Yoon,Jeong-Nam Han,Jae-Jik Baek,Ji-Hoon Cha,Myung-Geun Song,Young-Sang Youn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-10-19.

Methods of fabricating semiconductor devices including fin-shaped active regions

Номер патента: US09728535B2. Автор: Bo-Un Yoon,Jeong-Nam Han,Jae-Jik Baek,Ji-Hoon Cha,Myung-Geun Song,Young-Sang Youn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-08.

Semiconductor device with seg film active region

Номер патента: US20120280394A1. Автор: Young Bog Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-11-08.

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

Номер патента: US20160035864A1. Автор: Alptekin Emre,Sardesai Viraj Y.,Tran Cung D.,Jain Sameer H.,Vega Reinaldo A.. Владелец: . Дата публикации: 2016-02-04.

Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same

Номер патента: US20210057417A1. Автор: Ho Lee,Sang Woo Lee,Chankyung Kim,Jaehong MIN,Junsoo Kim,Minhee Cho,Sangwuk PARK,Woo Bin Song,Hei Seung Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-02-25.

Integrated circuit comprising components, for example nmos transistors, having active regions with relaxed compressive stresses

Номер патента: US20200052073A1. Автор: Pascal Fornara,Christian Rivero,Guilhem Bouton. Владелец: STMICROELECTRONICS ROUSSET SAS. Дата публикации: 2020-02-13.

SEMICONDUCTOR DEVICES HAVING FIN-SHAPED ACTIVE REGIONS

Номер патента: US20190088551A1. Автор: KIM Sung-Min,KIM Dong-Won,BAE Geum-Jong. Владелец: . Дата публикации: 2019-03-21.

INTEGRATED CIRCUIT WITH ACTIVE REGION JOGS

Номер патента: US20220149077A1. Автор: Chen Kuo-Ji,PAN Lei,WANG Xin-Yong,XIE Tian-Yu. Владелец: . Дата публикации: 2022-05-12.

INTEGRATED CIRCUIT COMPRISING COMPONENTS, FOR EXAMPLE NMOS TRANSISTORS, HAVING ACTIVE REGIONS WITH RELAXED COMPRESSIVE STRESSES

Номер патента: US20180130881A1. Автор: Fornara Pascal,Rivero Christian,Bouton Guilhem. Владелец: STMICROELECTRONICS (ROUSSET) SAS. Дата публикации: 2018-05-10.

Methods of Fabricating Semiconductor Devices Including Fin-Shaped Active Regions

Номер патента: US20140227857A1. Автор: Baek Jae-Jik,Yoon Bo-Un,Han Jeong-Nam,CHA Ji-Hoon,Song Myung-Geun,YOUN YOUNG-SANG. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-08-14.

INTEGRATED CIRCUIT COMPRISING COMPONENTS, FOR EXAMPLE NMOS TRANSISTORS, HAVING ACTIVE REGIONS WITH RELAXED COMPRESSIVE STRESSES

Номер патента: US20190165105A1. Автор: Fornara Pascal,Rivero Christian,Bouton Guilhem. Владелец: STMICROELECTRONICS (ROUSSET) SAS. Дата публикации: 2019-05-30.

SEMICONDUCTOR DEVICE WITH TWO-PART INSULATION STRUCTURE WITHIN NON-ACTIVE REGION

Номер патента: US20190198384A1. Автор: Lin Hsin-Chih,Lin Yung-Hao,LIN Shin-Cheng. Владелец: Vanguard International Semiconductor Corporation. Дата публикации: 2019-06-27.

ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS

Номер патента: US20170207336A1. Автор: Ranade Pushkar. Владелец: . Дата публикации: 2017-07-20.

MEMORY DEVICE HAVING RECESSED ACTIVE REGION

Номер патента: US20210234051A1. Автор: Huang Yong-Sheng,LIU MING-CHYI. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2021-07-29.

Semiconductor devices including active regions in ram areas with deposition determined pitch

Номер патента: US20190348280A1. Автор: NAN Wu. Владелец: Globalfoundries Inc. Дата публикации: 2019-11-14.

SELF-ALIGNED GATE CONTACT COMPATIBLE CROSS COUPLE CONTACT FORMATION

Номер патента: US20210210384A1. Автор: Guo Dechao,Reznicek Alexander,Loubet Nicolas,Xie Ruilong,Pranatharthi Haran Balasubramanian S. Владелец: . Дата публикации: 2021-07-08.

TWO-DIMENSIONAL SELF-ALIGNED SUPER VIA INTEGRATION ON SELF-ALIGNED GATE CONTACT

Номер патента: US20180090374A1. Автор: Xie Ruilong,CHI Cheng. Владелец: . Дата публикации: 2018-03-29.

TWO-DIMENSIONAL SELF-ALIGNED SUPER VIA INTEGRATION ON SELF-ALIGNED GATE CONTACT

Номер патента: US20170294347A1. Автор: Xie Ruilong,CHI Cheng. Владелец: . Дата публикации: 2017-10-12.

TWO-DIMENSIONAL SELF-ALIGNED SUPER VIA INTEGRATION ON SELF-ALIGNED GATE CONTACT

Номер патента: US20170294349A1. Автор: Xie Ruilong,CHI Cheng. Владелец: . Дата публикации: 2017-10-12.

Semiconductor device including gate contact

Номер патента: CN106024870A. Автор: 权赫基,金珉彻,尹彰燮. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-12.

Semiconductor device including gate contact portion

Номер патента: CN106024870B. Автор: 权赫基,金珉彻,尹彰燮. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-20.

Semiconductor devices including gate contacts

Номер патента: US20160284799A1. Автор: Changseop YOON,Min Choul Kim,Hyokki Kwon. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-09-29.

Method of forming improvrd contavt region in active region

Номер патента: JPS62252933A. Автор: ヨウ−ユァン・リュウ. Владелец: Advanced Micro Devices Inc. Дата публикации: 1987-11-04.

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING FIN-SHAPED ACTIVE REGIONS

Номер патента: US20180174889A1. Автор: Baek Jae-Jik,Yoon Bo-Un,Han Jeong-Nam,CHA Ji-Hoon,Song Myung-Geun,YOUN YOUNG-SANG. Владелец: . Дата публикации: 2018-06-21.

Gate contact structure

Номер патента: DE102021112085A1. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Lin-Yu HUANG,Sheng-Tsung Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-07-28.

Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatus

Номер патента: US20150187907A1. Автор: Atsushi Yamada. Владелец: Transphorm Japan Inc. Дата публикации: 2015-07-02.

Method for fabricating conductive layer stack and method for fabricating semiconductor device with gate contact

Номер патента: US20230223300A1. Автор: Che-Hsien LIAO,Yueh Hsu. Владелец: Nanya Technology Corp. Дата публикации: 2023-07-13.

Iii-v transistors with resistive gate contacts

Номер патента: US20210167200A1. Автор: Sansaptak DASGUPTA,Han Wui Then,Marko Radosavljevic. Владелец: Intel Corp. Дата публикации: 2021-06-03.

Gate Contact Structure for FinFET

Номер патента: US20140252496A1. Автор: LIU Chi-Wen,Wang Chao-Hsiung. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-09-11.

Semiconductor device including an active region and two layers having different stress characteristics

Номер патента: US09847389B2. Автор: Brian A. Winstead,Vance H. Adams,Paul A. Grudowski. Владелец: NXP USA Inc. Дата публикации: 2017-12-19.

Semiconductor devices having active regions at different levels

Номер патента: US09673198B2. Автор: Juyoun Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-06-06.

Semiconductor device having reduced-damage active region and method of manufacturing the same

Номер патента: US09472466B2. Автор: Ki-chul Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-10-18.

Semiconductor structure with dispersedly arranged active region trenches

Номер патента: US20130270669A1. Автор: Chih-Chiang Chuang,Chao-Hsin Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-17.

Semiconductor device including an active region and two layers having different stress characteristics

Номер патента: US20140054704A1. Автор: Brian A. Winstead,Vance H. Adams,Paul A. Grudowski. Владелец: FREESCALE SEMICONDUCTOR INC. Дата публикации: 2014-02-27.

Semiconductor device having reduced-damage active region and method of manufacturing the same

Номер патента: US20150140749A1. Автор: Ki-chul Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2015-05-21.

Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy

Номер патента: US9559004B2. Автор: Il Kwon Shim,Won Kyoung Choi,Byung Joon Han. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-01-31.

Semiconductor device having active regions of different dimensions and method of manufacturing the same

Номер патента: US20240030290A1. Автор: Wei-Cheng Lin,Jiann-Tyng Tzeng,Ching-Yu Huang,Wei-Cheng TZENG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-01-25.

Semiconductor device with polycrystalline silicon active region and ic including semiconductor device

Номер патента: CA1218470A. Автор: Hisao Hayashi,Chiaki Sakai,Hisayoshi Yamoto. Владелец: Sony Corp. Дата публикации: 1987-02-24.

Method for forming active region array and semiconductor structure

Номер патента: US11887859B2. Автор: Zhen Zhou,Erxuan PING,Yanghao LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-01-30.

Method for forming active region array and semiconductor structure

Номер патента: US20210343537A1. Автор: Zhen Zhou,Erxuan PING,Yanghao LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2021-11-04.

Method for making a transistor of which the active region includes a semimetal material

Номер патента: US11239347B2. Автор: Yves Morand,Jean-Pierre Colinge. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2022-02-01.

Method for making a transistor of which the active region includes a semimetal material

Номер патента: US20200343374A1. Автор: Yves Morand,Jean-Pierre Colinge. Владелец: Commissariat a lEnergie Atomique et aux Energies Alternatives CEA. Дата публикации: 2020-10-29.

Transistor interface between gate and active region

Номер патента: US11843035B2. Автор: Yoshikazu Moriwaki,Moeko Kawana. Владелец: Micron Technology Inc. Дата публикации: 2023-12-12.

Semiconductor device having a gate contact over an active region

Номер патента: US12046670B2. Автор: Shafiullah Syed,Manjunatha Prabhu,Zhixing ZHAO. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-07-23.

Semiconductor device having a gate contact over an active region

Номер патента: US20230102787A1. Автор: Shafiullah Syed,Manjunatha Prabhu,Zhixing ZHAO. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-03-30.

Transistor Gate Contacts and Methods of Forming the Same

Номер патента: US20240250032A1. Автор: Chih-Hao Wang,Jin Cai,Kuo-Cheng Chiang,Guan-Lin Chen,Yu-Xuan Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-07-25.

Backside gate contact, backside gate etch stop layer, and methods of forming same

Номер патента: US20240290864A1. Автор: Wei-De Ho,Szuya Liao. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-29.

Methods of Gate Contact Formation for Vertical Transistors

Номер патента: US20220130963A1. Автор: Sang-Yun Lee. Владелец: BeSang Inc. Дата публикации: 2022-04-28.

Structures of gate contact formation for vertical transistors

Номер патента: US11769809B2. Автор: Sang-Yun Lee. Владелец: BeSang Inc. Дата публикации: 2023-09-26.

Methods of gate contact formation for vertical transistors

Номер патента: US11978777B2. Автор: Sang-Yun Lee. Владелец: BeSang Inc. Дата публикации: 2024-05-07.

Methods of Gate Contact Formation for Vertical Transistors

Номер патента: US20240154013A1. Автор: Sang-Yun Lee. Владелец: BeSang Inc. Дата публикации: 2024-05-09.

Structures of Gate Contact Formation for Vertical Transistors

Номер патента: US20240021689A1. Автор: Sang-Yun Lee. Владелец: BeSang Inc. Дата публикации: 2024-01-18.

Integrated circuit structures having fin isolation regions recessed for gate contact

Номер патента: US20240113111A1. Автор: Tahir Ghani,Leonard P. GULER,Sukru Yemenicioglu,Clifford Ong. Владелец: Intel Corp. Дата публикации: 2024-04-04.

Integrated circuit structures having fin isolation regions recessed for gate contact

Номер патента: EP4345875A1. Автор: Tahir Ghani,Leonard P. GULER,Sukru Yemenicioglu,Clifford Ong. Владелец: Intel Corp. Дата публикации: 2024-04-03.

Laterally diffused metal-oxide semiconductor with gate contact

Номер патента: US20230317815A1. Автор: Jagar Singh. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-10-05.

Laterally diffused metal-oxide semiconductor with gate contact

Номер патента: EP4254510A1. Автор: Jagar Singh. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-10-04.

Common self aligned gate contact for stacked transistor structures

Номер патента: US20230420503A1. Автор: Xuan Liu,Junli Wang,Su Chen Fan,Stuart Sieg. Владелец: International Business Machines Corp. Дата публикации: 2023-12-28.

Contact over active gate structures with uniform and conformal gate insulating cap layers for advanced integrated circuit structure fabrication

Номер патента: EP4243082A2. Автор: Tahir Ghani,Charles H. Wallace,Leonard P. GULER,Chanaka D. Munasinghe,Krishna GANESAN. Владелец: Intel Corp. Дата публикации: 2023-09-13.

Contact over active gate structures with uniform and conformal gate insulating cap layers for advanced integrated circuit structure fabrication

Номер патента: EP4243082A3. Автор: Tahir Ghani,Charles H. Wallace,Leonard P. GULER,Chanaka D. Munasinghe,Krishna GANESAN. Владелец: Intel Corp. Дата публикации: 2024-01-03.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: AU2019336103A1. Автор: Jeffrey R. LaRoche,Kelly P. Ip,Thomas E. Kazior,Eduardo M. Chumbes. Владелец: Raytheon Co. Дата публикации: 2020-12-17.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: EP3847684A1. Автор: Jeffrey R. LaRoche,Kelly P. Ip,Thomas E. Kazior,Eduardo M. Chumbes. Владелец: Raytheon Co. Дата публикации: 2021-07-14.

Nitride Structures Having Low Capacitance Gate Contacts Integrated with Copper Damascene Structures

Номер патента: MY195186A. Автор: Jeffrey R Laroche,Thomas E Kazior,Eduardo M Chumbes,Kelly P Ip. Владелец: Raytheon Co. Дата публикации: 2023-01-11.

Semiconductor device having device element structures with pn junction formed in active region and voltage withstanding rings formed in periphery region surrounding the active region and method of manufacturing semiconductor device

Номер патента: US20240266433A1. Автор: Yasuyuki Hoshi. Владелец: Fuji Electric Co Ltd. Дата публикации: 2024-08-08.

Semiconductor devices having tapered active regions

Номер патента: US09634092B2. Автор: Zhenhua Wu,Krishna Kumar Bhuwalka,Uihui KWON,Keunho Lee. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-04-25.

Semiconductor device having a substrate including a first active region and a second active region

Номер патента: US09502417B2. Автор: Jong-Mil Youn,Ju-youn Kim,Hyung-Soon JANG,Tae-Won Ha. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2016-11-22.

Semiconductor device with a fin-shaped active region and a gate electrode

Номер патента: US12015086B2. Автор: Jae-Hoon Lee,Tae-Young Kim,Gi-gwan PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2024-06-18.

Non-planar semiconductor device having group III-V material active region with multi-dielectric gate stack

Номер патента: US09653548B2. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Benjamin Chu-Kung,Niloy Mukherjee. Владелец: Intel Corp. Дата публикации: 2017-05-16.

Semiconductor device having group III-V material active region and graded gate dielectric

Номер патента: US09640646B2. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Matthew V. Metz. Владелец: Intel Corp. Дата публикации: 2017-05-02.

Device with isolation structures in active regions

Номер патента: US20240234425A1. Автор: Hui Zhan,George R. Mulfinger,Tamilmani Ethirajan,Eric S. Kozarsky,Kaustubh Shanbhag,Anton V. Tokranov. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-07-11.

Device with isolation structures in active regions

Номер патента: EP4401123A1. Автор: Hui Zhan,George R. Mulfinger,Tamilmani Ethirajan,Eric S. Kozarsky,Kaustubh Shanbhag,Anton V. Tokranov. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-07-17.

Non-planar semiconductor device having germanium-based active region with release etch-passivation surface

Номер патента: EP2901488A1. Автор: Willy Rachmady,Jessica S. Kachian,Robert B. TURKOT JR.. Владелец: Intel Corp. Дата публикации: 2015-08-05.

RELIABLE GATE CONTACTS OVER ACTIVE AREAS

Номер патента: US20190097016A1. Автор: Alptekin Emre,Ramachandran Ravikumar,Chu Albert M.,Na Myung-Hee,Eastman Eric. Владелец: . Дата публикации: 2019-03-28.

Gate Contact Over Active Enabled by Alternative Spacer Scheme and Claw-Shaped Cap

Номер патента: US20200135886A1. Автор: Choi Kisik,Wang Junli,Fan Su Chen,Basker Veeraraghavan,Greene Andrew,Muthinti Gangadhara Raja,CHAN Victor W.C.. Владелец: . Дата публикации: 2020-04-30.

Tunnel field-effect transistor having a stacked structure including a first active region and a second active region

Номер патента: US11081550B2. Автор: Koichi Matsumoto. Владелец: Sony Semiconductor Solutions Corp. Дата публикации: 2021-08-03.

Non-volatile memory cell arrays with a sectioned active region

Номер патента: US20220028873A1. Автор: William Taylor,Oscar D. Restrepo,Edmund K. Banghart. Владелец: GlobalFoundries US Inc. Дата публикации: 2022-01-27.

Wrap around cross-couple contact structure with enhanced gate contact size

Номер патента: US20230018698A1. Автор: Kangguo Cheng,Ruilong Xie,Chanro Park,Julien Frougier. Владелец: International Business Machines Corp. Дата публикации: 2023-01-19.

Wrap around cross-couple contact structure with enhanced gate contact size

Номер патента: US11784125B2. Автор: Kangguo Cheng,Ruilong Xie,Chanro Park,Julien Frougier. Владелец: International Business Machines Corp. Дата публикации: 2023-10-10.

Non-planar semiconductor device having active region with multi-dielectric gate stack

Номер патента: US9018680B2. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Benjamin Chu-Kung,Niloy Mukherjee. Владелец: Intel Corp. Дата публикации: 2015-04-28.

Semiconductor device having group III-V material active region and graded gate dielectric

Номер патента: US10090405B2. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Matthew V. Metz. Владелец: Intel Corp. Дата публикации: 2018-10-02.

Composite transistor having overlapping active regions and control electrode

Номер патента: US11004848B2. Автор: Koichi Matsumoto. Владелец: Sony Corp. Дата публикации: 2021-05-11.

Composite transistor with electrodes extending to active regions

Номер патента: US11688738B2. Автор: Koichi Matsumoto. Владелец: Sony Group Corp. Дата публикации: 2023-06-27.

Field Effect Transistor Device with Raised Active Regions

Номер патента: US20130071979A1. Автор: Kangguo Cheng,Bruce B. Doris,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2013-03-21.

Field Effect Transistor Device with Raised Active Regions

Номер патента: US20130069159A1. Автор: Kangguo Cheng,Bruce B. Doris,Alexander Reznicek,Ali Khakifirooz. Владелец: International Business Machines Corp. Дата публикации: 2013-03-21.

Semiconductor device having different size active regions and method of making

Номер патента: US20230275090A1. Автор: Chun-Yen Lin,Yi-Kan Cheng,Jiann-Tyng Tzeng,Sheng-Feng Huang,Shang-Wei Fang,Lee-Chung Lu,Kam-Tou SIO. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-08-31.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: US20200083167A1. Автор: Jeffrey R. LaRoche,Kelly P. Ip,Thomas E. Kazior,Eduardo M. Chumbes. Владелец: Raytheon Co. Дата публикации: 2020-03-12.

Transition between different active regions

Номер патента: US20240120376A1. Автор: Yuan-Ching Peng,Jiun-Ming Kuo,You-Ting Lin,Po Shao LIN,Yu Mei Jian. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-04-11.

Field effect transistors with self-aligned extension portions of epitaxial active regions

Номер патента: US09761721B2. Автор: Effendi Leobandung,Tenko Yamashita. Владелец: International Business Machines Corp. Дата публикации: 2017-09-12.

METHODS OF FORMING A GATE CONTACT FOR A TRANSISTOR ABOVE THE ACTIVE REGION AND AN AIR GAP ADJACENT THE GATE OF THE TRANSISTOR

Номер патента: US20180122919A1. Автор: Kim Hoon,Xie Ruilong,Park Chanro,Sung Min Gyu. Владелец: . Дата публикации: 2018-05-03.

METHODS OF FORMING AN AIR GAP ADJACENT A GATE OF A TRANSISTOR AND A GATE CONTACT ABOVE THE ACTIVE REGION OF THE TRANSISTOR

Номер патента: US20180277430A1. Автор: Labonte Andre,Bouche Guillaume,Xie Ruilong,Park Chanro,LIEBMANN Lars,LiCausi Nicholas,Cave Nigel. Владелец: . Дата публикации: 2018-09-27.

FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONTACTS AND GATE CONTACTS POSITIONED OVER ACTIVE TRANSISTORS

Номер патента: US20220051942A1. Автор: Cheng Kangguo,Li Juntao,Bi Zhenxing,Kong Dexin. Владелец: . Дата публикации: 2022-02-17.

FIELD EFFECT TRANSISTOR DEVICES WITH SELF-ALIGNED SOURCE/DRAIN CONTACTS AND GATE CONTACTS POSITIONED OVER ACTIVE TRANSISTORS

Номер патента: US20200144118A1. Автор: Cheng Kangguo,Li Juntao,Bi Zhenxing,Kong Dexin. Владелец: . Дата публикации: 2020-05-07.

METHODS OF FORMING A GATE CONTACT ABOVE AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE

Номер патента: US20160359009A1. Автор: Labonte Andre,KNORR Andreas,Xie Ruilong. Владелец: . Дата публикации: 2016-12-08.

ACTIVE CONTACT AND GATE CONTACT INTERCONNECT FOR MITIGATING ADJACENT GATE ELECTRODE SHORTAGES

Номер патента: US20180261604A1. Автор: Woo Youngtag,Paul Bipul C.. Владелец: . Дата публикации: 2018-09-13.

Self-aligned backside gate contact

Номер патента: US20240170369A1. Автор: Alexander Reznicek,Tsung-Sheng KANG,Tushar Gupta,Sagarika Mukesh. Владелец: International Business Machines Corp. Дата публикации: 2024-05-23.

Metal Gate and Gate Contact Structure for FinFET

Номер патента: US20140239396A1. Автор: LIU Chi-Wen,Wang Chao-Hsiung. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-08-28.

Metal Gate and Gate Contact Structure for FinFET

Номер патента: US20150179756A1. Автор: LIU Chi-Wen,Wang Chao-Hsiung. Владелец: . Дата публикации: 2015-06-25.

GATE CONTACT STRUCTURES AND CROSS-COUPLED CONTACT STRUCTURES FOR TRANSISTOR DEVICES

Номер патента: US20190148240A1. Автор: Xie Ruilong,Sun Lei,Liebmann Lars W.,Zang Hui,Woo Youngtag,Paul Bipul C.,Chanemougame Daniel,NIEBOJEWSKI Heimanu,Zhu Xuelian. Владелец: . Дата публикации: 2019-05-16.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: IL280179B1. Автор: . Владелец: Raytheon Co. Дата публикации: 2023-04-01.

Nitride structures having low capacitance gate contacts integrated with copper damascene structures

Номер патента: IL280179B2. Автор: . Владелец: Raytheon Co. Дата публикации: 2023-08-01.

ETCH PROFILE CONTROL OF GATE CONTACT OPENING

Номер патента: US20220102202A1. Автор: Lin Huan-Just,Wu Jyun-De,Tu Yuan-Tien,WANG Yi-Chen,CHANG Yi-Chun,Hsiung Te-Chih. Владелец: Taiwan Semiconductor Manufacturing Co., Ltd.. Дата публикации: 2022-03-31.

Metal Gate Contacts and Methods of Forming the Same

Номер патента: US20210098471A1. Автор: Lin Yu-Kuan,CHEN Jui-Lin,Chen Chih-Hsuan. Владелец: . Дата публикации: 2021-04-01.

THREE-DIMENSIONAL MEMORY DEVICE WITH GATED CONTACT VIA STRUCTURES AND METHOD OF MAKING THEREOF

Номер патента: US20190096808A1. Автор: HOSODA Naohiro,TSUTSUMI Masanori. Владелец: . Дата публикации: 2019-03-28.

CMOS GATE CONTACT RESISTANCE REDUCTION

Номер патента: US20160172378A1. Автор: Chou Anthony I.,Kumar Arvind,Lee Sungjae. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2016-06-16.

STAGGERED SELF ALIGNED GATE CONTACT

Номер патента: US20190252408A1. Автор: Chen Xiangdong,LI RUI,Boynapalli Venugopal,LIM Hyeokjin,HIREMATH Renukprasad. Владелец: . Дата публикации: 2019-08-15.

SELF-ALIGNED GATE CONTACT INTEGRATION WITH METAL RESISTOR

Номер патента: US20200312909A1. Автор: Cheng Kangguo,Xie Ruilong,Miao Xin,Conti Richard A.. Владелец: . Дата публикации: 2020-10-01.

Self-aligned gate contact isolation

Номер патента: US20190363015A1. Автор: Peng Xu,Kangguo Cheng,Ruilong Xie,Ekmini A. De Sillva. Владелец: International Business Machines Corp. Дата публикации: 2019-11-28.

Three-dimensional memory device with gated contact via structures and method of making thereof

Номер патента: US10453798B2. Автор: Masanori Tsutsumi,Naohiro Hosoda. Владелец: SanDisk Technologies LLC. Дата публикации: 2019-10-22.

Selective gate contact fill metallization

Номер патента: US9437714B1. Автор: Chih-Chao Yang,Oscar van der Straten,Alexander Reznicek,Praneet Adusumilli. Владелец: International Business Machines Corp. Дата публикации: 2016-09-06.

Semiconductor device with storage nodes at active regions and method for manufacturing the same

Номер патента: DE102008047616A1. Автор: Min-Hee Suwon Cho,Seung-Bae Suwon Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2009-04-16.

Staggered self aligned gate contact

Номер патента: TW201941396A. Автор: 李�瑞,林赫晶,向東 陳,瑞努普拉斯德 海梅斯,凡努格柏爾 柏納巴里. Владелец: 美商高通公司. Дата публикации: 2019-10-16.

Staggered self aligned gate contact

Номер патента: WO2019160607A1. Автор: Xiangdong Chen,Rui Li,Hyeokjin LIM,Venugopal Boynapalli,Renukprasad HIREMATH. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2019-08-22.

METHOD OF CONCURRENTLY FORMING SOURCE/DRAIN AND GATE CONTACTS AND RELATED DEVICE

Номер патента: US20180006028A1. Автор: Xie Ruilong,CHI Cheng. Владелец: . Дата публикации: 2018-01-04.

METHOD OF CONCURRENTLY FORMING SOURCE/DRAIN AND GATE CONTACTS AND RELATED DEVICE

Номер патента: US20170352654A1. Автор: Xie Ruilong,CHI Cheng. Владелец: . Дата публикации: 2017-12-07.

Gate contact for a semiconductor device and methods of fabrication thereof

Номер патента: US8969927B2. Автор: Helmut Hagleitner,Fabian Radulescu. Владелец: Cree Inc. Дата публикации: 2015-03-03.

Method of manufacturing a semiconductor device having an active region and dummy patterns

Номер патента: US8119495B2. Автор: Kenichi Kuroda,Kozo Watanabe,Hirohiko Yamamoto. Владелец: Hitachi ULSI Systems Co Ltd. Дата публикации: 2012-02-21.

Contact Over Active Gate Structure

Номер патента: US20200075408A1. Автор: Wang Wenhui,Ngai Christopher S.,DAI Huixiong. Владелец: . Дата публикации: 2020-03-05.

Contact Over Active Gate Structure

Номер патента: US20200075409A1. Автор: Huixiong Dai,Christopher S. Ngai,Wenhui Wang. Владелец: Applied Materials Inc. Дата публикации: 2020-03-05.

CONTACT OVER ACTIVE GATE STRUCTURES USING DIRECTED SELF-ASSEMBLY FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Номер патента: US20220102210A1. Автор: Gstrein Florian,CHANDHOK Manish,Singh Gurpreet,Wallace Charles H.,SCHENKER Richard E.,NYHUS Paul A.,HAN Eungnak,HARAN Mohit K.,SHYKIND David,ALOYSIUS Jinnie,PURSEL Sean. Владелец: . Дата публикации: 2022-03-31.

CONTACT OVER ACTIVE GATE STRUCTURES WITH METAL OXIDE LAYERS TO INHIBIT SHORTING

Номер патента: US20210090990A1. Автор: Gstrein Florian,CHANDHOK Manish,HOURANI Rami,Wallace Charles H.,GULER Leonard P.,SCHENKER Richard E.,NYHUS Paul A.,HARAN Mohit K.,PATEL Reken,WARD Curtis. Владелец: . Дата публикации: 2021-03-25.

Contact over active gate structures with etch stop layers for advanced integrated circuit structure fabrication

Номер патента: US20200105672A1. Автор: Hiten KOTHARI,Mohit K. HARAN,Atul Madhavan,Nicholas J. KYBERT. Владелец: Intel Corp. Дата публикации: 2020-04-02.

CONTACT OVER ACTIVE GATE STRUCTURES WITH ETCH STOP LAYERS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Номер патента: US20220310516A1. Автор: HARAN Mohit K.,KOTHARI HITEN,MADHAVAN Atul,KYBERT Nicholas J.. Владелец: . Дата публикации: 2022-09-29.

Reliability Macros for Contact Over Active Gate Layout Designs

Номер патента: US20230160944A1. Автор: Miaomiao Wang,Ruilong Xie,Huimei Zhou. Владелец: International Business Machines Corp. Дата публикации: 2023-05-25.

Simple contact over gate on active area

Номер патента: US20190157158A1. Автор: Effendi Leobandung. Владелец: International Business Machines Corp. Дата публикации: 2019-05-23.

Semiconductor chip packages having bond over active circuit (boac) structures

Номер патента: US20240234282A1. Автор: Jeffrey Salvacion SOLAS,Maricel Fabia ESCAÑO. Владелец: Texas Instruments Inc. Дата публикации: 2024-07-11.

Semiconductor Device Including a Conductive Feature Over an Active Region

Номер патента: US20200006217A1. Автор: Zhuang Hui-Zhong,TIEN Li-Chun,Hsieh Tung-Heng,WANG Sheng-Hsiung,LIN Chung-Te,CHIANG Ting-Wei. Владелец: . Дата публикации: 2020-01-02.

TECHNIQUE FOR PATTERNING ACTIVE REGIONS OF TRANSISTOR ELEMENTS IN A LATE MANUFACTURING STAGE

Номер патента: US20190027400A1. Автор: Mulfinger George,SPORER Ryan. Владелец: . Дата публикации: 2019-01-24.

Active region structure and the forming method thereof

Номер патента: US20220084834A1. Автор: LIN Gang-Yi. Владелец: . Дата публикации: 2022-03-17.

Semiconductor Device including a Conductive Feature Over an Active Region

Номер патента: US20200075476A1. Автор: Zhuang Hui-Zhong,TIEN Li-Chun,Hsieh Tung-Heng,WANG Sheng-Hsiung,LIN Chung-Te,CHIANG Ting-Wei. Владелец: . Дата публикации: 2020-03-05.

INTEGRATED CIRCUIT COMPRISING COMPONENTS, FOR EXAMPLE NMOS TRANSISTORS, HAVING ACTIVE REGIONS WITH RELAXED COMPRESSIVE STRESSES

Номер патента: US20160093696A1. Автор: Fornara Pascal,Rivero Christian,Bouton Guilhem. Владелец: STMICROELECTRONICS (ROUSSET) SAS. Дата публикации: 2016-03-31.

METHOD FOR RELAXING THE TRANSVERSE MECHANICAL STRESSES WITHIN THE ACTIVE REGION OF A MOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

Номер патента: US20160099183A1. Автор: ANDRIEU Francois,Rideau Denis,Richard Emmanuel,Baylac Elise. Владелец: . Дата публикации: 2016-04-07.

Fin field effect transistor including asymmetric raised active regions

Номер патента: US20160218043A1. Автор: Kangguo Cheng,Ali Khakifirooz,Veeraraghavan S. Basker. Владелец: Globalfoundries Inc. Дата публикации: 2016-07-28.

INTEGRATED CIRCUIT COMPRISING COMPONENTS, FOR EXAMPLE NMOS TRANSISTORS, HAVING ACTIVE REGIONS WITH RELAXED COMPRESSIVE STRESSES

Номер патента: US20150249132A1. Автор: Fornara Pascal,Rivero Christian,Bouton Guilhem. Владелец: STMICROELECTRONICS (ROUSSET) SAS. Дата публикации: 2015-09-03.

Active region array formation method

Номер патента: US12100594B2. Автор: ChihCheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-24.

Methods for fabricating integrated circuits with improved active regions

Номер патента: US9620418B2. Автор: Wei Lu,Liang Li,Alex See,Yung Fu Alfred Chong,Lian Choo Goh,Fangyue Liu. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2017-04-11.

Asymmetric gate contact over source/drain contact

Номер патента: US20240332182A1. Автор: Ruilong Xie,Chanro Park,Yann Mignot,Shahab Siddiqui. Владелец: International Business Machines Corp. Дата публикации: 2024-10-03.

GATE CONTACT FOR A SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF

Номер патента: US20140264713A1. Автор: Hagleitner Helmut,Radulescu Fabian. Владелец: CREE, INC.. Дата публикации: 2014-09-18.

FIELD EFFECT TRANSISTORS WITH BACK GATE CONTACT AND BURIED HIGH RESISTIVITY LAYER

Номер патента: US20210217849A1. Автор: Stamper Anthony K.,PEKARIK JOHN J.,Ellis-Monaghan John J.,SHANK Steven M.,Jain Vibhor. Владелец: . Дата публикации: 2021-07-15.

Integrated device comprising transistor coupled to a dummy gate contact

Номер патента: WO2021194981A1. Автор: Xia Li,Bin Yang,Haining Yang. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2021-09-30.

Integrated device comprising transistor coupled to a dummy gate contact

Номер патента: US20210305250A1. Автор: Xia Li,Bin Yang,Haining Yang. Владелец: Qualcomm Inc. Дата публикации: 2021-09-30.

Integrated device comprising transistor coupled to a dummy gate contact

Номер патента: EP4128338A1. Автор: Xia Li,Bin Yang,Haining Yang. Владелец: Qualcomm Inc. Дата публикации: 2023-02-08.

Forming Source/Drain Zones with a Delectric Plug Over an Isolation Region Between Active Regions

Номер патента: US20150064871A1. Автор: Sun Jie,Matthew James,Haller Gordon,Hopkins John. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2015-03-05.

Gate contact isolation in a semiconductor

Номер патента: US11901427B2. Автор: Haining Yang,Junjing Bao. Владелец: Qualcomm Inc. Дата публикации: 2024-02-13.

Methods of recessing an active region and sti structures in a common etch process

Номер патента: US20130273709A1. Автор: Frank Jakubowski,Frank Ludwig,Jörg Radecker. Владелец: Globalfoundries Inc. Дата публикации: 2013-10-17.

METHOD FOR ISOLATING ACTIVE REGIONS IN GERMANIUM-BASED MOS DEVICE

Номер патента: US20150031188A1. Автор: Li Ming,Li Min,Huang Ru,An Xia,Zhang Xing. Владелец: PEKING UNIVERSITY. Дата публикации: 2015-01-29.

Active region design layout

Номер патента: US20160042109A1. Автор: Ming Lei,Cheng-Wei Cheng,Chen-Liang Liao,Yi-Lii Huang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-02-11.

TECHNIQUE FOR DEFINING ACTIVE REGIONS OF SEMICONDUCTOR DEVICES WITH REDUCED LITHOGRAPHY EFFORT

Номер патента: US20190043752A1. Автор: Smith Elliot John,Zier Michael. Владелец: . Дата публикации: 2019-02-07.

PHOTOMASK ASSEMBLY, PATTERNED MASK AND METHOD FOR FORMING THE SAME, AND METHOD FOR FORMING ACTIVE REGION

Номер патента: US20220301873A1. Автор: ZHANG Junjun,Wu Zhimin,CHAO Fufang. Владелец: CHANGXIN MEMORY TECHNOLOGIES, INC.. Дата публикации: 2022-09-22.

METHODS OF FABRICATING NONVOLATILE MEMORY DEVICES INCLUDING VOIDS BETWEEN ACTIVE REGIONS AND RELATED DEVICES

Номер патента: US20140248755A1. Автор: Han Jee-Hoon,Hur Sung-Hoi,Park Young-Woo,Lee Dong-sik,You Jang-Hyun,Joo Sang-Ick. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-09-04.

Active region, active region array and formation method thereof

Номер патента: US12087581B2. Автор: ChihCheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-09-10.

Semiconductor device having fin active regions and method of fabricating the same

Номер патента: US09991257B2. Автор: Hyunjung Lee,Sunjung Kim,Yong-Suk Tak,Miseon PARK,Jongryeol YOO,Bonyoung Koo. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-06-05.

Active region, active region array and formation method thereof

Номер патента: US20220310615A1. Автор: ChihCheng LIU. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2022-09-29.

Nitride semiconductor device comprising layered structure of active region and method for manufacturing the same

Номер патента: US20230290836A1. Автор: Yosuke Hata. Владелец: ROHM CO LTD. Дата публикации: 2023-09-14.

Semiconductor device having an amorphous silicon active region

Номер патента: CA1091361A. Автор: David E. Carlson. Владелец: RCA Corp. Дата публикации: 1980-12-09.

Contact-over-active-gate transistor structures with contacts landed on enlarged gate portions

Номер патента: US20230125886A1. Автор: Anthony K. Stamper,Mark Levy,Steven M. Shank,Venkata N.R. Vanukuru. Владелец: GlobalFoundries US Inc. Дата публикации: 2023-04-27.

Transistor structures with interleaved body contacts and gate contacts

Номер патента: EP4404271A1. Автор: Steven M. Shank,Venkata Narayana Rao Vanukuru. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-07-24.

Transistor structures with interleaved body contacts and gate contacts

Номер патента: US20240243175A1. Автор: Steven M. Shank,Venkata Narayana Rao Vanukuru. Владелец: GlobalFoundries US Inc. Дата публикации: 2024-07-18.

Vertical tunneling field-effect transistor cell with coaxially arranged gate contacts and drain contacts

Номер патента: US09466714B2. Автор: Ming Zhu,Harry-Hak-Lay Chuang,Cheng-Cheng Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-11.

Jfet device with stacked gate contact

Номер патента: EP4307392A1. Автор: Farshid Raissi. Владелец: Iii V Technologies GmbH. Дата публикации: 2024-01-17.

Vertical Tunneling Field-Effect Transistor Cell with Coaxially Arranged Gate Contacts and Drain Contacts

Номер патента: US20150236153A1. Автор: Ming Zhu,Harry-Hak-Lay Chuang,Cheng-Cheng Kuo. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2015-08-20.

Multi-finger devices in mutliple-gate-contacted-pitch, integrated structures

Номер патента: US09935106B2. Автор: Brent A. Anderson,Edward J. Nowak,Robert R. Robison. Владелец: Globalfoundries Inc. Дата публикации: 2018-04-03.

GATE CONTACT OVER ACTIVE PROCESSES

Номер патента: US20200258744A1. Автор: Wang Anchuan,Seutter Sean M.,Wu Dong,Thareja Gaurav,Wang Xikun,Natarajan Sanjay,Kashefizadeh Keyvan. Владелец: . Дата публикации: 2020-08-13.

Semiconductor device structure including active region having an extension portion

Номер патента: US09613181B2. Автор: Joachim Deppe,Ricardo Pablo. Mikalo. Владелец: Globalfoundries Inc. Дата публикации: 2017-04-04.

Power device with partitioned active regions

Номер патента: EP4371158A1. Автор: Leslie Louis Szepesi,Amaury Gendron-Hansen,Dumitru Gheorge Sdrulla. Владелец: Analog Power Conversion LLC. Дата публикации: 2024-05-22.

Optical proximity correction for active region design layout

Номер патента: US20130285194A1. Автор: Chih-Kang Chao,Ling-Sung Wang,Jen-Pan Wang,Chih-Hsun Lin,Mei-Hsuan LIN,Chih-Chan Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-10-31.

Wide bandgap transistor layout with staggered gate electrode fingers and split active regions

Номер патента: US20240113190A1. Автор: Yu Zhu,Guillaume Alexandre Blin. Владелец: Skyworks Solutions Inc. Дата публикации: 2024-04-04.

Semiconductor device with t-shaped active region and methods of forming same

Номер патента: US20230343594A1. Автор: Qingchao Meng,Zhang-Ying YAN,Huaixin XIAN. Владелец: TSMC Nanjing Co Ltd. Дата публикации: 2023-10-26.

Semiconductor structure having dummy active region

Номер патента: US20240145409A1. Автор: Ming-Che Lin,Chien-Chin Huang. Владелец: Winbond Electronics Corp. Дата публикации: 2024-05-02.

Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions

Номер патента: US20200152644A1. Автор: Haitao Liu,Durai Vishak Nirmal Ramaswamy,Kamal M. Karda. Владелец: Micron Technology Inc. Дата публикации: 2020-05-14.

Power device with partitioned active regions

Номер патента: WO2023287598A1. Автор: Leslie Louis Szepesi,Amaury Gendron-Hansen,Dumitru Gheorge Sdrulla. Владелец: Analog Power Conversion LLC. Дата публикации: 2023-01-19.

Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions

Номер патента: US20210242221A1. Автор: Haitao Liu,Durai Vishak Nirmal Ramaswamy,Kamal M. Karda. Владелец: Micron Technology Inc. Дата публикации: 2021-08-05.

Optical proximity correction for active region design layout

Номер патента: US20130069162A1. Автор: Chih-Kang Chao,Ling-Sung Wang,Jen-Pan Wang,Chih-Hsun Lin,Mei-Hsuan LIN,Chih-Chan Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2013-03-21.

Memory Active Region Layout for Improving Memory Performance

Номер патента: US20230046028A1. Автор: Feng-Ming Chang,Shih-Hao Lin,Chih-Chuan Yang,Ping-Wei Wang,Lien Jung Hung,Chia-Hao Pao,Kian-Long Lim,Chao-Yuan Chang,Chih-Hsuan CHEN. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-02-16.

Semiconductor device with series connected inverters having different number of active regions

Номер патента: US9768172B2. Автор: Takeshi Okagaki. Владелец: Renesas Electronics Corp. Дата публикации: 2017-09-19.

SELF-ALIGNED GATE CONTACT FORMATION

Номер патента: US20150311082A1. Автор: Bouche Guillaume,Labonté André P.,WAN Jing,Wells Gabriel Padron,Wei Andy Chih-Hung. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2015-10-29.

Integrated circuit devices having contact holes exposing gate electrodes in active regions

Номер патента: US7034365B2. Автор: Myoung-kwan Cho,Jeung-Hwan Park. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-04-25.

Integrated circuit devices having contact holes exposing gate electrodes in active regions and methods of fabricating the same

Номер патента: US20060141715A1. Автор: Myoung-kwan Cho,Jeung-Hwan Park. Владелец: Individual. Дата публикации: 2006-06-29.

Static random access memory (sram) bit cell circuits with a minimum distance between a storage circuit active region and a read port circuit active region to reduce area and sram bit cell array circuits

Номер патента: US20220102360A1. Автор: Sunil Sharma,Sonia Ghosh,Rahul Biradar,Channappa Desai. Владелец: Qualcomm Inc. Дата публикации: 2022-03-31.

Static random access memory (sram) bit cell circuits with a minimum distance between a storage circuit active region and a read port circuit active region to reduce area and sram bit cell array circuits

Номер патента: EP4222741A1. Автор: Sunil Sharma,Sonia Ghosh,Rahul Biradar,Channappa Desai. Владелец: Qualcomm Inc. Дата публикации: 2023-08-09.

Materials and layout design options for dsa on transition regions over active die

Номер патента: US20200411501A1. Автор: Florian Gstrein,Gurpreet Singh,Richard E. Schenker,Paul A. Nyhus,Eungnak Han. Владелец: Intel Corp. Дата публикации: 2020-12-31.

Static random access memory (sram) bit cell circuits with a minimum distance between a storage circuit active region and a read port circuit active region to reduce area and sram bit cell array circuits

Номер патента: WO2022072068A1. Автор: Sunil Sharma,Sonia Ghosh,Rahul Biradar,Channappa Desai. Владелец: QUALCOMM INCORPORATED. Дата публикации: 2022-04-07.

Insulating layer for planarization and definition of the active region of a nanowire device

Номер патента: US20160172538A1. Автор: Scott Brad Herner. Владелец: GLO AB. Дата публикации: 2016-06-16.

Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus

Номер патента: US09564413B2. Автор: Heap Hoe Kuan,Il Kwon Shim,Byung Joon Han. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-02-07.

Semiconductor devices with reduced active region deffects and unique contacting schemes

Номер патента: US20040121507A1. Автор: Clifford King,Jeffrey Bude,Malcolm Carroll. Владелец: Individual. Дата публикации: 2004-06-24.

Semiconductor device having an internal-field-guarded active region

Номер патента: WO2017042368A1. Автор: Axel Hoffmann,Gerald PAHN,Gordon CALLSEN. Владелец: TECHNISCHE UNIVERSITAT BERLIN. Дата публикации: 2017-03-16.

Semiconductor device having an internal-field-guarded active region

Номер патента: EP3347922A1. Автор: Axel Hoffmann,Gerald PAHN,Gordon CALLSEN. Владелец: TECHNISCHE UNIVERSITAET BERLIN. Дата публикации: 2018-07-18.

Semiconductor device having an internal-field-guarded active region

Номер патента: US20180261718A1. Автор: Axel Hoffmann,Gerald PAHN,Gordon CALLSEN. Владелец: TECHNISCHE UNIVERSITAET BERLIN. Дата публикации: 2018-09-13.

Semiconductor structures having active regions comprising InGaN and methods of forming such semiconductor structures

Номер патента: US09978905B2. Автор: Chantal Arena,Jean-Philippe Debray,Heather Mcfavilen. Владелец: Soitec SA. Дата публикации: 2018-05-22.

Semiconductor arrangement having capacitor separated from active region

Номер патента: US09837421B2. Автор: Xiaomeng Chen,Chia-Shiung Tsai,Shih-Chang Liu,Chern-Yow Hsu,Cheng-Jong Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-12-05.

Semiconductor arrangement having capacitor separated from active region

Номер патента: US09466663B2. Автор: Xiaomeng Chen,Chen-Jong Wang,Chia-Shiung Tsai,Shih-Chang Liu,Chern-Yow Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2016-10-11.

Process Flow to Reduce Hole Defects in P-Active Regions and to Reduce Across-Wafer Threshold Voltage Scatter

Номер патента: US20120282763A1. Автор: Andreas Ott,Stephan Kronholz. Владелец: Globalfoundries Inc. Дата публикации: 2012-11-08.

Semiconductor arrangement having capacitor separated from active region

Номер патента: US20180102368A1. Автор: Xiaomeng Chen,Chen-Jong Wang,Chia-Shiung Tsai,Shih-Chang Liu,Chern-Yow Hsu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2018-04-12.

Semiconductor arrangement having capacitor separated from active region

Номер патента: US20170025417A1. Автор: Xiaomeng Chen,Chia-Shiung Tsai,Shih-Chang Liu,Chern-Yow Hsu,Cheng-Jong Wang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-26.

SACRIFICIAL GATE SPACER REGIONS FOR GATE CONTACTS FORMED OVER THE ACTIVE REGION OF A TRANSISTOR

Номер патента: US20200335401A1. Автор: Basker Veeraraghavan S.,Xie Ruilong,Fan Su Chen,Park Chanro,Labonté André P.. Владелец: . Дата публикации: 2020-10-22.

Self-aligned trench silicide process for preventing gate contact to silicide shorts

Номер патента: US09722043B2. Автор: Kangguo Cheng,Veeraraghavan S. Basker. Владелец: International Business Machines Corp. Дата публикации: 2017-08-01.

METHOD AND APPARATUS FOR PLACING A GATE CONTACT INSIDE AN ACTIVE REGION OF A SEMICONDUCTOR

Номер патента: US20180012887A1. Автор: Labonte Andre,Zhang Xunyuan,Xie Ruilong. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2018-01-11.

Forming crown active regions for FinFETs

Номер патента: US09543210B2. Автор: Tung Ying Lee,Ming-Jie Huang,Chen-Ping CHEN,Hui-Min Lin. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2017-01-10.

Gate, Contact, and Fin Cut Method

Номер патента: US20200083116A1. Автор: Machkaoutsan Vladimir,Eneman Geert,Demuynck Steven. Владелец: . Дата публикации: 2020-03-12.

Methods to reduce gate contact resistance for AC reff reduction

Номер патента: US8674457B2. Автор: Eng Huat Toh,Jae Gon Lee,Elgin Quek,Chung Foong Tan,Chunshan YIN. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2014-03-18.

Active region patterning

Номер патента: US20220392897A1. Автор: Yen-Ming Chen,Dian-Hau Chen,Chih-Hsin Yang. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2022-12-08.

Contact Over Active Gate Structure

Номер патента: US20200075422A1. Автор: Wang Wenhui,Ngai Christopher S.,DAI Huixiong. Владелец: . Дата публикации: 2020-03-05.

CONTACT OVER ACTIVE GATE STRUCTURE

Номер патента: US20220367285A1. Автор: Wang Wenhui,Ngai Christopher S.,DAI Huixiong. Владелец: Applied Materials, Inc.. Дата публикации: 2022-11-17.

Semiconductor devices with fin-shaped active regions and methods of fabricating same

Номер патента: US11482523B2. Автор: Jae Hun Jeong,Yoon Seok Lee,Jong Ki JUNG,Chan Geun Ahn,Soo Hun Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2022-10-25.

Semiconductor devices with fin-shaped active regions and methods of fabricating same

Номер патента: US20200212035A1. Автор: Jae Hun Jeong,Yoon Seok Lee,Jong Ki JUNG,Chan Geun Ahn,Soo Hun Hong. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-07-02.

Methods of protecting semiconductor materials in the active region of a transistor device and the resulting transistor device

Номер патента: US20210399126A1. Автор: Haiting Wang,Yanping SHEN,Judson R. Holt,Sipeng Gu. Владелец: GlobalFoundries US Inc. Дата публикации: 2021-12-23.

Drive current adjustment for transistors formed in the same active region by locally providing embedded strain inducing semiconductor material in the active region

Номер патента: KR101520441B1. Автор: 우베 그리베노브,얀 호엔트쉘. Владелец: 어드밴스드 마이크로 디바이시즈, 인코포레이티드. Дата публикации: 2015-05-15.

Drive current adjustment for transistors formed in the same active region by locally providing embedded strain inducing semiconductor material in the active region

Номер патента: CN102203937A. Автор: J·亨治尔,U·格里布诺. Владелец: Advanced Micro Devices Inc. Дата публикации: 2011-09-28.

Thin film transistor including a compositionally-modulated active region and methods for forming the same

Номер патента: US20240274723A1. Автор: Hai-Ching Chen,Chung-Te Lin,Po-Ting Lin,Wu-Wei Tsai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-08-15.

Active region cut process

Номер патента: US12080603B2. Автор: Kuo-Chin Liu,Jiun-Ming Kuo,Han-Yu Tsai,You-Ting Lin,Zu-Yin Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-09-03.

Active region cut process

Номер патента: US20240371697A1. Автор: Kuo-Chin Liu,Jiun-Ming Kuo,Han-Yu Tsai,You-Ting Lin,Zu-Yin Liu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-11-07.

DEVICES WITH SLOTTED ACTIVE REGIONS

Номер патента: US20200058515A1. Автор: Sun Kai,Yang Heng,Mittal Anurag,Pritchard David C.,REN Hongru,Lei Lixia,Nayyar Neha,KLUTH George J.,PRABHU Manjunatha G.. Владелец: . Дата публикации: 2020-02-20.

THIN FILM TRANSISTOR INCLUDING A COMPOSITIONALLY-MODULATED ACTIVE REGION AND METHODS FOR FORMING THE SAME

Номер патента: US20220271166A1. Автор: CHEN Hai-Ching,LIN Chung-Te,Lin Po-Ting,TSAI Wu-Wei. Владелец: . Дата публикации: 2022-08-25.

GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS

Номер патента: US20170140994A1. Автор: Cheng Kangguo,Khakifirooz Ali,STANDAERT Theodorus E.,Faltermeier Johnathan E.,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2017-05-18.

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

Номер патента: US20150200291A1. Автор: Alptekin Emre,Sardesai Viraj Y.,Tran Cung D.,Jain Sameer H.,Vega Reinaldo A.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2015-07-16.

NON-PLANAR SEMICONDUCTOR DEVICE HAVING HYBRID GEOMETRY-BASED ACTIVE REGION

Номер патента: US20200185526A1. Автор: Kuhn Kelin J.,Kim Seiyon,Rios Rafael,FERDOUSI Fahmida. Владелец: . Дата публикации: 2020-06-11.

Semiconductor Devices Having FIN Active Regions

Номер патента: US20180197791A1. Автор: KIM Dohyoung,CHOI KYUNGIN,Kim Yoonhae,KANG Myungil,YANG Kwang-Yong,CHEON Ah-Young. Владелец: . Дата публикации: 2018-07-12.

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE ACTIVE REGIONS

Номер патента: US20200212217A1. Автор: Chang Chih-Hao,Shieh Ming-Feng,Chang Chang-Yun,Chen Hsin-Chih,Lu Kuei-Liang,Yu Shao-Ming,Chang Kai-Tai,Lin Yi-Tang. Владелец: . Дата публикации: 2020-07-02.

Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same

Номер патента: CA2453318C. Автор: Richard Peter Smith. Владелец: Cree Inc. Дата публикации: 2014-06-10.

On-gate contacts in a MOS device

Номер патента: US8658524B2. Автор: David Vigar,Rainer Herberholz. Владелец: Cambridge Silicon Radio Ltd. Дата публикации: 2014-02-25.

On- gate contacts in a mos device

Номер патента: WO2011073635A1. Автор: David Vigar,Rainer Herberholz. Владелец: Cambridge Silicon Radio Ltd. Дата публикации: 2011-06-23.

On-gate contacts in a mos device

Номер патента: US20120248512A1. Автор: David Vigar,Rainer Herberholz. Владелец: Cambridge Silicon Radio Ltd. Дата публикации: 2012-10-04.

Integrated circuit device and associated layout including two pairs of co-aligned complementary gate electrodes with offset gate contact structures

Номер патента: US8072003B2. Автор: Michael C. Smayling,Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2011-12-06.

Semiconductor power device including wire or ribbon bonds over device active region

Номер патента: US20200013692A1. Автор: Gabriele Formicone. Владелец: Integra Technologies Inc. Дата публикации: 2020-01-09.

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END GATE CONTACT PROCESS

Номер патента: US20190295904A1. Автор: Clark Robert. Владелец: . Дата публикации: 2019-09-26.

PLATFORM AND METHOD OF OPERATING FOR INTEGRATED END-TO-END GATE CONTACT PROCESS

Номер патента: US20190295905A1. Автор: Clark Robert. Владелец: . Дата публикации: 2019-09-26.

Metal passivating layer for III-V semiconductors, and improved gate contact for III-V-based metal-insulator-semiconductor (MIS) devices

Номер патента: US6252262B1. Автор: B. T. Jonker,O. J. Glembocki,R. T. Holm. Владелец: US Department of Navy. Дата публикации: 2001-06-26.

GATE CONTACT WITH VERTICAL ISOLATION FROM SOURCE-DRAIN

Номер патента: US20150206754A1. Автор: Horak David V.,Xie Ruilong,Ponoth Shom S.,Pranatharthiharan Balasubramanian. Владелец: . Дата публикации: 2015-07-23.

Semiconductor device having line-type trench to define active region and method of forming the same

Номер патента: US20140117566A1. Автор: Jay-Bok Choi,Kyu-Hyun Lee,Mi-Jeong JANG,Young-jin Choi,Ju-Young HUH. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-05-01.

Advanced node standard logic cells that utilizes TS cut mask(s) and avoid DFM problems caused by closely spaced gate contacts and TSCUT jogs

Номер патента: US09984970B1. Автор: Jonathan HAIGH. Владелец: PDF Solutions Inc. Дата публикации: 2018-05-29.

Transistor layout structures for controlling sizes of transistors without changing active regions, and methods of controlling the same

Номер патента: US20080141204A1. Автор: Sung-Hoon Kim,Joung-yeal Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2008-06-12.

Well contact cell with doped tap region separated from active region, and methods to form same

Номер патента: US10909298B1. Автор: Nigel Chan,Navneet Jain. Владелец: GlobalFoundries Dresden Module One LLC and Co KG. Дата публикации: 2021-02-02.

Chirped multi-well active region led

Номер патента: EP1173894A1. Автор: YING-LAN Chang,Michael R. Krames,Christopher P. Kocot,Stephen A. Stockman,Patrick N. Grillot,Robert C. Taber,Eugene I. Chen. Владелец: LUMILEDS LLC. Дата публикации: 2002-01-23.

Semiconductor device including memory cell array with transistors disposed in different active regions

Номер патента: US09704873B2. Автор: Noriaki Maeda,Masao Morimoto,Yasuhisa Shimazaki. Владелец: Renesas Electronics Corp. Дата публикации: 2017-07-11.

Dissipating heat from an active region of an optical device

Номер патента: US11409141B2. Автор: Erik Norberg,Jonathan Edgar Roth. Владелец: Openlight Photonics Inc. Дата публикации: 2022-08-09.

Power transistor, driver and output stage including an active region, a metallization level, and a further metallization level

Номер патента: US10649021B2. Автор: Daniel Schneider,Alexander Mann,Henning Lohmeyer. Владелец: ROBERT BOSCH GMBH. Дата публикации: 2020-05-12.

Methods for packaging integrated circuit devices including cavities adjacent active regions and related structures

Номер патента: WO2000048251A1. Автор: Walter M. Marcinkiewicz. Владелец: Ericsson, Inc.. Дата публикации: 2000-08-17.

Sram cell layout including arrangement of multiple active regions and multiple gate regions

Номер патента: US20230403838A1. Автор: DHORI Kedar Janardan,Shafquat Jahan Ahmed. Владелец: STMicroelectronics International NV Switzerland. Дата публикации: 2023-12-14.

Integrated circuit device having active region coupled to metal layers on opposite sides of substrate, and method

Номер патента: US12021033B2. Автор: Chung-Hui Chen. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2024-06-25.

Semiconductor device with at least one functional element containing multiple active regions, and method of manufacturing thereof

Номер патента: WO2019162442A1. Автор: Ryan Lewis,David van Treeck,Sergio FERNANDEZ-GARRIDO. Владелец: FORSCHUNGSVERBUND BERLIN E.V.. Дата публикации: 2019-08-29.

Semiconductor device with at least one functional element containing multiple active regions, and method of manufacturing thereof

Номер патента: EP3756227A1. Автор: Ryan Lewis,David van Treeck,Sergio FERNANDEZ-GARRIDO. Владелец: Forschungsverbund Berlin FVB eV. Дата публикации: 2020-12-30.

Semiconductor device including line-type active region and method for manufacturing the same

Номер патента: US20120146121A1. Автор: Kyung Do Kim. Владелец: Hynix Semiconductor Inc. Дата публикации: 2012-06-14.

Pattern form of an active region of a MOS type semiconductor device

Номер патента: US5760454A. Автор: Kenji Nishi. Владелец: Oki Electric Industry Co Ltd. Дата публикации: 1998-06-02.

III-nitride nanowire LED with strain modified surface active region and method of making thereof

Номер патента: US09761757B2. Автор: Sungsoo Yi,Nathan Gardner,Linda Romano,Patrik Svensson. Владелец: GLO AB. Дата публикации: 2017-09-12.

Image sensor including active regions

Номер патента: US11804510B2. Автор: Kyoung-In Lee,Sun-Ho Oh,Sung-Kun Park. Владелец: SK hynix Inc. Дата публикации: 2023-10-31.

Light emitting diode (LED) with three active regions and intensity control unit

Номер патента: GB2497183A. Автор: Eric Dias. Владелец: International Business Machines Corp. Дата публикации: 2013-06-05.

Semiconductor device including active region and semiconductor layer on side surface of active region

Номер патента: US20230232614A1. Автор: Jaepil Lee,Hijung KIM. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2023-07-20.

Device having cell that includes extended active region

Номер патента: US20230072698A1. Автор: Chang-Yu Wu,Hui-Zhong ZHUANG,Li-Chun Tien,Lee-Chung Lu. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-03-09.

Device of active regions and gates and method of forming gate patterns using the same

Номер патента: US20070158693A1. Автор: Hyoung Soon Yune. Владелец: Hynix Semiconductor Inc. Дата публикации: 2007-07-12.

Device of active regions and gates and method of forming gate patterns using the same

Номер патента: US7719034B2. Автор: Hyoung Soon Yune. Владелец: Hynix Semiconductor Inc. Дата публикации: 2010-05-18.

Semiconductor structures having active regions including indium gallium nitride, methods of forming such semiconductor structures, and related light emitting devices

Номер патента: US09634182B2. Автор: Ding Ding,Li Huang,Chantal Arena,Jean-Philippe Debray,Heather Mcfavilen. Владелец: Soitec SA. Дата публикации: 2017-04-25.

Semiconductor device with inverters having transistors formed in different active regions

Номер патента: US09570432B2. Автор: Mamoru NISHIZAKI. Владелец: Longitude Semiconductor SARL. Дата публикации: 2017-02-14.

Method of manufacturing semiconductor structure having word line disposed over portion of an oxide-free dielectric material in the non-active region

Номер патента: US11488964B2. Автор: Ching-Chia Huang,Wei-Ming Liao. Владелец: Nanya Technology Corp. Дата публикации: 2022-11-01.

Dissipating heat from an active region of an optical device

Номер патента: US20170351124A1. Автор: Erik Norberg,Jonathan Edgar Roth. Владелец: Juniper Networks Inc. Дата публикации: 2017-12-07.

Semiconductor structure having word line disposed over portion of an oxide-free dielectric material in the non-active region

Номер патента: US20210265361A1. Автор: Ching-Chia Huang,Wei-Ming Liao. Владелец: Nanya Technology Corp. Дата публикации: 2021-08-26.

Dissipating heat from an active region of an optical device

Номер патента: US20220350180A1. Автор: Erik Norberg,Jonathan Edgar Roth. Владелец: Openlight Photonics Inc. Дата публикации: 2022-11-03.

Dissipating heat from an active region of an optical device

Номер патента: US20210018769A1. Автор: Erik Norberg,Jonathan Edgar Roth. Владелец: Juniper Networks Inc. Дата публикации: 2021-01-21.

Semiconductor device including standard cells with combined active region

Номер патента: US20230306175A1. Автор: Ta-Pen Guo,Guru Prasad. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-09-28.

Semiconductor integrated circuits having contacts spaced apart from active regions

Номер патента: US9748246B2. Автор: Tae-Joong Song,Jung-han Kim. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2017-08-29.

LED with active region disposed within an optical cavity defined by an embedded nanostructured layer and a reflector

Номер патента: US11942571B2. Автор: Toni LOPÉZ,Venkata Ananth TAMMA. Владелец: LUMILEDS LLC. Дата публикации: 2024-03-26.

Short wavelength infrared optoelectronic devices having graded or stepped dilute nitride active regions

Номер патента: US20200295221A1. Автор: Ding Ding,Ferran Suarez,Aymeric Maros. Владелец: Array Photonics Inc. Дата публикации: 2020-09-17.

Red micro-led with dopants in active region

Номер патента: WO2021086941A1. Автор: Anurag Tyagi,Guillaume LHEUREUX,David Hwang,Alexander Tonkikh,Michael Grundmann,Markus Broell,Steven David LESTER. Владелец: Facebook Technologies, LLC. Дата публикации: 2021-05-06.

Visualization system including tunnel junction based rgb die with isolated active regions

Номер патента: WO2024129662A1. Автор: Toni LOPÉZ. Владелец: LUMILEDS LLC. Дата публикации: 2024-06-20.

Tunnel junction based rgb die with isolated active regions

Номер патента: WO2024129659A1. Автор: Toni LOPÉZ. Владелец: LUMILEDS LLC. Дата публикации: 2024-06-20.

A solar cell comprising clusters in the active region

Номер патента: GB2341002A. Автор: Dieter Meissner,Michael Westphalen,Joern Rostalski,Uwe Kreibig. Владелец: FORSCHUNGSZENTRUM JUELICH GMBH. Дата публикации: 2000-03-01.

Micro-led active region co-doping for surface losses suppression

Номер патента: WO2023220417A1. Автор: Alexander Tonkikh,Pavel Gorlachuk,Arjun AJAYKUMAR. Владелец: Meta Platforms Technologies, LLC. Дата публикации: 2023-11-16.

Micro-led active region co-doping for surface losses suppression

Номер патента: US20230369537A1. Автор: Alexander Tonkikh,Pavel Gorlachuk,Arjun AJAYKUMAR. Владелец: Meta Platforms Technologies LLC. Дата публикации: 2023-11-16.

Method of determining the active region width between shallow trench isolation structures using a c-v measurement technique for fabricating a flash memory semiconductor device and a device thereby formed

Номер патента: US6818462B1. Автор: Zhigang Wang,Tien-Chun Yang,Nian Yang. Владелец: Advanced Micro Devices Inc. Дата публикации: 2004-11-16.

Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers

Номер патента: US20050123015A1. Автор: Ralph Johnson. Владелец: Finisar Corp. Дата публикации: 2005-06-09.

Method for producing a long wavelength indium gallium arsenide nitride (InGaAsN) active region

Номер патента: EP1361601A3. Автор: YING-LAN Chang,Tetsuya Takeuchi,David P. Bour,Scott Corzine,Michael R.T. Tan,Ashish Tandon. Владелец: AGILENT TECHNOLOGIES INC. Дата публикации: 2005-07-27.

Early response to plasma/charging damage by special pattern design of active region

Номер патента: US6929965B2. Автор: Bor-Cheng Chen,Yu-Feng Tai. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2005-08-16.

Light emitting semiconductor device having an electrical confinement barrier near the active region

Номер патента: WO2008016829A2. Автор: Ralph H. Johnson,James K. Guenter,James R. Biard. Владелец: FINISAR CORPORATION. Дата публикации: 2008-02-07.

Vertical-transport field-effect transistor with backside gate contact

Номер патента: US20240105610A1. Автор: Lawrence A. Clevenger,Brent A. Anderson,Ruilong Xie,Albert M. Chu,Nicholas Anthony Lanzillo,Reinaldo Vega. Владелец: International Business Machines Corp. Дата публикации: 2024-03-28.

INDEPENDENT GATE FINFET WITH BACKSIDE GATE CONTACT

Номер патента: US20180248041A1. Автор: Yamashita Tenko,Hook Terence B.,Rubin Joshua M.. Владелец: . Дата публикации: 2018-08-30.

INDEPENDENT GATE FINFET WITH BACKSIDE GATE CONTACT

Номер патента: US20180248042A1. Автор: Yamashita Tenko,Hook Terence B.,Rubin Joshua M.. Владелец: . Дата публикации: 2018-08-30.

Special construct for continuous non-uniform active region FinFET standard cells

Номер патента: US09893063B2. Автор: Andy Nguyen,Juhan Kim,Mahbub Rashed,Navneet Jain. Владелец: Globalfoundries Inc. Дата публикации: 2018-02-13.

Special construct for continuous non-uniform active region FinFET standard cells

Номер патента: US9893063B2. Автор: Andy Nguyen,Juhan Kim,Mahbub Rashed,Navneet Jain. Владелец: Globalfoundries Inc. Дата публикации: 2018-02-13.

Special construct for continuous non-uniform active region finfet standard cells

Номер патента: US20180122804A1. Автор: Andy Nguyen,Juhan Kim,Mahbub Rashed,Navneet Jain. Владелец: Globalfoundries Inc. Дата публикации: 2018-05-03.

GATE CONTACT FOR A SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF

Номер патента: US20150364569A1. Автор: Hagleitner Helmut,Radulescu Fabian. Владелец: . Дата публикации: 2015-12-17.

SELF-ALIGNED TRENCH SILICIDE PROCESS FOR PREVENTING GATE CONTACT TO SILICIDE SHORTS

Номер патента: US20160365424A1. Автор: Cheng Kangguo,Basker Veeraraghavan S.. Владелец: . Дата публикации: 2016-12-15.

Semiconductor device having semiconductor active and dummy regions with the dummy regions lower in height than the active regions

Номер патента: US5587612A. Автор: Mitsuhiro Sugiyama. Владелец: NEC Corp. Дата публикации: 1996-12-24.

BACKSIDE GATE CONTACT

Номер патента: US20220271138A1. Автор: Wang Chih-hao,Chuang Cheng-Chi,Chen Chun-Yuan,Chang Lo-Heng,Su Huan-Chieh,Yu Li-Zhen,Huang Lin-Yu. Владелец: . Дата публикации: 2022-08-25.

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE PROVIDED OVER ACTIVE REGION IN P-TYPE NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS

Номер патента: US20150187907A1. Автор: Yamada Atsushi. Владелец: . Дата публикации: 2015-07-02.

CONTACT OVER ACTIVE GATE STRUCTURES WITH METAL OXIDE-CAPED CONTACTS TO INHIBIT SHORTING

Номер патента: US20210091194A1. Автор: Gstrein Florian,CHANDHOK Manish,HOURANI Rami,Singh Gurpreet,SCHENKER Richard E.,TRONIC Tristan A.,HAN Eungnak,Vreeland Richard,Kabir Nafees,ELBAZ Giselle. Владелец: . Дата публикации: 2021-03-25.

CONTACT OVER ACTIVE GATE STRUCTURES WITH CONDUCTIVE GATE TAPS FOR ADVANCED INTEGRATED CIRCUIT STRUCTURE FABRICATION

Номер патента: US20200212189A1. Автор: Tan Elliot. Владелец: . Дата публикации: 2020-07-02.

Semiconductor Device and Method of Singulating Thin Semiconductor Wafer on Carrier Along Modified Region Within Non-Active Region Formed by Irradiating Energy

Номер патента: US20170092529A1. Автор: Shim Il Kwon,Han Byung Joon,Choi Won Kyoung. Владелец: STATS ChipPAC Pte. Ltd.. Дата публикации: 2017-03-30.

Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy

Номер патента: US9934998B2. Автор: Il Kwon Shim,Won Kyoung Choi,Byung Joon Han. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2018-04-03.

Field-effect transistor (fet) with source-drain contact over gate spacer

Номер патента: US20140370681A1. Автор: MIN Yang,Effendi Leobandung,Kevin K. Chan,Wilfried E. Haensch. Владелец: International Business Machines Corp. Дата публикации: 2014-12-18.

Field-effect transistor (FET) with source-drain contact over gate spacer

Номер патента: US8969152B2. Автор: MIN Yang,Effendi Leobandung,Kevin K. Chan,Wilfried E. Haensch. Владелец: International Business Machines Corp. Дата публикации: 2015-03-03.

Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus

Номер патента: US09553162B2. Автор: Steve Anderson,Heap Hoe Kuan,Il Kwon Shim,Byung Joon Han,Thomas J. Strothmann. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2017-01-24.

Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus

Номер патента: US20130221452A1. Автор: Anderson Steve,Shim Il Kwon,Han Byung Joon,Kuan Heap Hoe,Strothmann Thomas J.. Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2013-08-29.

INTEGRATED CIRCUIT DEVICE WITH GATE LINE CROSSING FIN-TYPE ACTIVE REGION

Номер патента: US20180083002A1. Автор: CHOI KYUNGIN,Kim Changhwa,JUN HWICHAN,HWANG INCHAN. Владелец: . Дата публикации: 2018-03-22.

SPECIAL CONSTRUCT FOR CONTINUOUS NON-UNIFORM ACTIVE REGION FINFET STANDARD CELLS

Номер патента: US20180122804A1. Автор: Nguyen Andy,RASHED Mahbub,JAIN Navneet,KIM JuHan. Владелец: . Дата публикации: 2018-05-03.

SEMICONDUCTOR DEVICE WITH SEG FILM ACTIVE REGION

Номер патента: US20150132897A1. Автор: KIM Young Bog. Владелец: . Дата публикации: 2015-05-14.

SPECIAL CONSTRUCT FOR CONTINUOUS NON-UNIFORM ACTIVE REGION FINFET STANDARD CELLS

Номер патента: US20170141109A1. Автор: Nguyen Andy,RASHED Mahbub,JAIN Navneet,KIM JuHan. Владелец: . Дата публикации: 2017-05-18.

ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS

Номер патента: US20150179742A1. Автор: Ranade Pushkar. Владелец: . Дата публикации: 2015-06-25.

GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS

Номер патента: US20150214219A1. Автор: Cheng Kangguo,Khakifirooz Ali,STANDAERT Theodorus E.,Faltermeier Johnathan E.,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2015-07-30.

SEMICONDUCTOR DEVICES WITH FIN-SHAPED ACTIVE REGIONS AND METHODS OF FABRICATING SAME

Номер патента: US20200212035A1. Автор: JEONG Jae Hun,JUNG Jong Ki,Ahn Chan Geun,Lee Yoon Seok,Hong Soo Hun. Владелец: . Дата публикации: 2020-07-02.

METHODS OF FORMING GATE CONTACT OVER ACTIVE REGION FOR VERTICAL FINFET, AND STRUCTURES FORMED THEREBY

Номер патента: US20190393342A1. Автор: Soss Steven R.,Xie Ruilong,Zang Hui. Владелец: . Дата публикации: 2019-12-26.

Methods of forming gate contact over active region for vertical finfet, and structures formed thereby

Номер патента: TW202013599A. Автор: 謝瑞龍,輝 臧,史蒂芬Ｒ 索斯. Владелец: 美商格芯（美國）集成電路科技有限公司. Дата публикации: 2020-04-01.

Integrated circuit structure without gate contact and method of forming same

Номер патента: US20180061976A1. Автор: Min-Hwa Chi,Hui Zang,Manfred J. Eller,Jerome J. B. Ciavatti. Владелец: Globalfoundries Inc. Дата публикации: 2018-03-01.

Integrated circuit structure without gate contact and method of forming same

Номер патента: US09842927B1. Автор: Min-Hwa Chi,Hui Zang,Jerome J. B. Ciavatti,Manfred J Eller. Владелец: Globalfoundries Inc. Дата публикации: 2017-12-12.

Self-aligned gate contact for VTFETs

Номер патента: US12107147B2. Автор: Kangguo Cheng,Miaomiao Wang,Su Chen Fan,Huimei Zhou. Владелец: International Business Machines Corp. Дата публикации: 2024-10-01.

THREE-DIMENSIONAL SEMICONDUCTOR TRANSISTOR WITH GATE CONTACT IN ACTIVE REGION

Номер патента: US20170092764A1. Автор: Labonte Andre,KNORR Andreas,Xie Ruilong. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2017-03-30.

TRANSISTOR ARRANGEMENTS WITH STACKED TRENCH CONTACTS AND GATE CONTACTS WITHOUT GATE CAPS

Номер патента: US20220285527A1. Автор: Golonzka Oleg,Wei Andy Chih-Hung,Adibi-Rizi Farshid. Владелец: Intel Corporation. Дата публикации: 2022-09-08.

GATE CONTACT STRUCTURE HAVING GATE CONTACT LAYER

Номер патента: US20160336399A1. Автор: Labonte Andre,Kim Ryan Ryoung-Han. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2016-11-17.

A semiconductor device with a buried gate electrode and gate contacts

Номер патента: DE102014109665B4. Автор: Ralf Siemieniec,Michael Hutzler,Oliver Blank. Владелец: INFINEON TECHNOLOGIES AUSTRIA AG. Дата публикации: 2018-03-08.

FORMING A GATE CONTACT IN THE ACTIVE AREA

Номер патента: US20170053997A1. Автор: Cheng Kangguo,Yamashita Tenko,Xie Ruilong. Владелец: . Дата публикации: 2017-02-23.

Semiconductor devices including an offset metal to polysilicon gate contact

Номер патента: US20220149165A1. Автор: Sei-Hyung Ryu,Daniel Jenner Lichtenwalner,Naeem ISLAM,Woongsun Kim. Владелец: Wolfspeed Inc. Дата публикации: 2022-05-12.

Trench-Type Field Effect Transistor (Trench FET) With Improved Poly Gate Contact

Номер патента: US20190123196A1. Автор: Dix Greg. Владелец: MICROCHIP TECHNOLOGY INCORPORATED. Дата публикации: 2019-04-25.

Operable floating gate contact for soi

Номер патента: KR100344736B1. Автор: 통민에이치,브라이언트앤드레스,노웍에드워드제이. Владелец: 인터내셔널 비지네스 머신즈 코포레이션. Дата публикации: 2002-07-19.

Fin field effect transistor including self-aligned raised active regions

Номер патента: US09502562B2. Автор: Anirban Basu,Amlan Majumdar,Guy M. Cohen. Владелец: International Business Machines Corp. Дата публикации: 2016-11-22.

SELF-ALIGNED VIA FOR GATE CONTACT OF SEMICONDUCTOR DEVICES

Номер патента: US20160005822A1. Автор: Wang Zhongze,Yeap Choh Fei,SONG Stanley Seungchul,RIM Kern. Владелец: . Дата публикации: 2016-01-07.

Gate Contact Structure for a Semiconductor Device

Номер патента: US20200044064A1. Автор: Weyers Joachim,SCHLOEGL Andreas,Kowalik-Seidl Katarzyna,Vecino Vazquez Enrique. Владелец: . Дата публикации: 2020-02-06.

INTEGRATED CIRCUIT STRUCTURE WITHOUT GATE CONTACT AND METHOD OF FORMING SAME

Номер патента: US20180061976A1. Автор: Chi Min-Hwa,Eller Manfred J.,Zang Hui,Ciavatti Jerome J. B.. Владелец: . Дата публикации: 2018-03-01.

Integrated circuit (ic) devices including cross gate contacts

Номер патента: US20180090492A1. Автор: DEEPAK SHARMA,SUBHASH KUCHANURI,Chul Hong Park,Rajeev Ranjan,Kwan Young CHUN,Jae Seok Yang. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2018-03-29.

Field effect transistors with back gate contact and buried high resistivity layer

Номер патента: US11296190B2. Автор: Anthony K. Stamper,John J. Pekarik,John J. Ellis-Monaghan,Vibhor Jain,Steven M. Shank. Владелец: GlobalFoundries US Inc. Дата публикации: 2022-04-05.

Semiconductor device with a drain region underlying a gate contact pad

Номер патента: EP2383790B1. Автор: Yoshiaki Hisamoto,Kazunari Hatade. Владелец: Mitsubishi Electric Corp. Дата публикации: 2019-07-24.

Gate contact and runners for high density trench MOSFET

Номер патента: US20060273390A1. Автор: Fwu-Iuan Hshieh,Brian Pratt. Владелец: M Mos Sdn Bhd. Дата публикации: 2006-12-07.

Structures of Gate Contact Formation for Vertical Transistors

Номер патента: US20220130973A1. Автор: Sang-Yun Lee. Владелец: BeSang Inc. Дата публикации: 2022-04-28.

Different dimensions across active region for stronger via to backside power rail

Номер патента: US20240088146A1. Автор: Carl Radens,Brent A. Anderson,Ruilong Xie,Albert M. Chu. Владелец: International Business Machines Corp. Дата публикации: 2024-03-14.

Fin field effect transistor including self-aligned raised active regions

Номер патента: US20160079421A1. Автор: Anirban Basu,Amlan Majumdar,Guy M. Cohen. Владелец: International Business Machines Corp. Дата публикации: 2016-03-17.

Fin field effect transistor including self-aligned raised active regions

Номер патента: US20150255570A1. Автор: Anirban Basu,Amlan Majumdar,Guy M. Cohen. Владелец: International Business Machines Corp. Дата публикации: 2015-09-10.

Transistors having gate pattern suitable for self-aligning channel impurity diffusion region in active region and methods of forming the same

Номер патента: KR100843712B1. Автор: 한성희,박승현,정태영. Владелец: 삼성전자주식회사. Дата публикации: 2008-07-04.

Methods for manufacturing non-planar semiconductor devices having germanium-based active regions with a combined release-etch passivation step.

Номер патента: EP2901488B1. Автор: Willy Rachmady,Jessica S. Kachian,Robert B. TURKOT JR.. Владелец: Intel Corp. Дата публикации: 2021-07-21.

Partial FIN On Oxide For Improved Electrical Isolation Of Raised Active Regions

Номер патента: US20150014773A1. Автор: Cheng Kangguo,Khakifirooz Ali,Vega Reinaldo A.,Utomo Henry K.,Hook Terence B.,Harley Eric C.. Владелец: . Дата публикации: 2015-01-15.

FINFET WITH ELECTRICALLY ISOLATED ACTIVE REGION ON BULK SEMICONDUCTOR SUBSTRATE AND METHOD OF FABRICATING SAME

Номер патента: US20150021691A1. Автор: Fronheiser Jody A.,AKARVARDAR Murat Kerem,JACOB Ajey Poovannummoottil. Владелец: . Дата публикации: 2015-01-22.

STRUCTURE WITH POLYCRYSTALLINE ACTIVE REGION FILL SHAPE(S), AND RELATED METHOD

Номер патента: US20220052205A1. Автор: SINGH Jagar,ADUSUMILLI Siva P.,Levy Mark D.. Владелец: . Дата публикации: 2022-02-17.

FIN FIELD EFFECT TRANSISTOR INCLUDING ASYMMETRIC RAISED ACTIVE REGIONS

Номер патента: US20150069526A1. Автор: Cheng Kangguo,Basker Veeraraghavan S.,Khakifirooz Ali. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2015-03-12.

FIN FIELD EFFECT TRANSISTOR INCLUDING SELF-ALIGNED RAISED ACTIVE REGIONS

Номер патента: US20160079421A1. Автор: Majumdar Amlan,Cohen Guy M.,Basu Anirban. Владелец: . Дата публикации: 2016-03-17.

METHOD FOR RELAXING THE TRANSVERSE MECHANICAL STRESSES WITHIN THE ACTIVE REGION OF A MOS TRANSISTOR, AND CORRESPONDING INTEGRATED CIRCUIT

Номер патента: US20150097241A1. Автор: ANDRIEU Francois,Rideau Denis,Richard Emmanuel,Baylac Elise. Владелец: . Дата публикации: 2015-04-09.

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE ACTIVE REGIONS

Номер патента: US20150115373A1. Автор: Chang Chih-Hao,Shieh Ming-Feng,Chang Chang-Yun,Chen Hsin-Chih,Lu Kuei-Liang,Yu Shao-Ming,Chang Kai-Tai,Lin Yi-Tang. Владелец: . Дата публикации: 2015-04-30.

STRUCTURE AND METHOD FOR PROVIDING LINE END EXTENSIONS FOR FIN-TYPE ACTIVE REGIONS

Номер патента: US20160163851A9. Автор: Chang Chih-Hao,Shieh Ming-Feng,Chang Chang-Yun,Chen Hsin-Chih,Lu Kuei-Liang,Yu Shao-Ming,Chang Kai-Tai,Lin Yi-Tang. Владелец: . Дата публикации: 2016-06-09.

SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION AND GRADED GATE DIELECTRIC

Номер патента: US20170194469A1. Автор: Dewey Gilbert,Pillarisetty Ravi,Radosavljevic Marko,Metz Matthew V.. Владелец: . Дата публикации: 2017-07-06.

Non-planar semiconductor device having group iii-v material active region with multi-dielectric gate stack

Номер патента: US20170221990A1. Автор: Gilbert Dewey,Ravi Pillarisetty,Marko Radosavljevic,Benjamin Chu-Kung,Niloy Mukherjee. Владелец: Intel Corp. Дата публикации: 2017-08-03.

Finfet with active region shaped structures and channel separation

Номер патента: US20140319615A1. Автор: Min-Hwa Chi,Hoong Shing Wong. Владелец: Globalfoundries Inc. Дата публикации: 2014-10-30.

Semiconductor device with a fin-shaped active region and a gate electrode

Номер патента: US20210265503A1. Автор: Jae-Hoon Lee,Tae-Young Kim,Gi-gwan PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2021-08-26.

FIN FIELD EFFECT TRANSISTOR INCLUDING SELF-ALIGNED RAISED ACTIVE REGIONS

Номер патента: US20150255570A1. Автор: Majumdar Amlan,Cohen Guy M.,Basu Anirban. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2015-09-10.

METHODS FOR FABRICATING INTEGRATED CIRCUITS WITH IMPROVED ACTIVE REGIONS

Номер патента: US20160133524A1. Автор: Lu Wei,Li Liang,See Alex,LIU FANGYUE,Goh Lian Choo,Chong Yung Fu Alfred. Владелец: . Дата публикации: 2016-05-12.

III-V TRANSISTORS WITH RESISTIVE GATE CONTACTS

Номер патента: US20210167200A1. Автор: Then Han Wui,Radosavljevic Marko,DASGUPTA Sansaptak. Владелец: . Дата публикации: 2021-06-03.

TRANSISTOR-BASED SEMICONDUCTOR DEVICE WITH AIR-GAP SPACERS AND GATE CONTACT OVER ACTIVE AREA

Номер патента: US20180138279A1. Автор: Kim Hoon,Xie Ruilong,Park Chanro,Sung Min Gyu,Liebmann Lars Wolfgang. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2018-05-17.

Heterostructure FET consists of a silicon/silicon-germanium heterostructure layer arrangement with a gate contact zone formed as a pn- or np-diode contact made of semiconductor material

Номер патента: DE10026553A1. Автор: Ulrich Seiler. Владелец: DaimlerChrysler AG. Дата публикации: 2002-02-14.

GaN transistor with nitrogen-rich tungsten nitride Schottky gate contact and method of forming the same

Номер патента: TW201110344A. Автор: Edward Yi Chang,Chung-Yu Lu. Владелец: Univ Nat Chiao Tung. Дата публикации: 2011-03-16.

Gate contact isolation in a semiconductor

Номер патента: TW202310330A. Автор: 海寧 楊,鈞勁 包. Владелец: 美商高通公司. Дата публикации: 2023-03-01.

METHOD OF FORMING A GATE CONTACT

Номер патента: US20140264448A1. Автор: Lin Po-Hsin,Wojtowicz Michael,Smorchkova Ioulia,NAMBA CAROL O.,Sumiko Poust,Grundbacher Ronald. Владелец: Northrop Grumman Systems Corporation. Дата публикации: 2014-09-18.

MULTI-FINGER DEVICES IN MUTLIPLE-GATE-CONTACTED-PITCH, INTEGRATED STRUCTURES

Номер патента: US20170287911A1. Автор: Nowak Edward J.,ANDERSON Brent A.,Robison Robert R.. Владелец: . Дата публикации: 2017-10-05.

SEMICONDUCTOR STRUCTURES OVER ACTIVE REGION AND METHODS OF FORMING THE STRUCTURES

Номер патента: US20200395356A1. Автор: Shu Jiehui,Zang Hui. Владелец: . Дата публикации: 2020-12-17.

NON-VOLATILE MEMORY DEVICES HAVING CHARGE STORAGE LAYERS AT INTERSECTING LOCATIONS OF WORD LINES AND ACTIVE REGION

Номер патента: US20140061772A1. Автор: AHN Su-Jin,Jeong Won-Cheol,Park Yoon-Moon. Владелец: . Дата публикации: 2014-03-06.

Methods of Manufacturing Integrated Circuit Devices Having a FIN-Type Active Region

Номер патента: US20180012889A1. Автор: Hyun Sang-Jin,Na Hoon-Joo,KWON Oh-Seong,KIM Wan-don,Son Hyeok-Jun,Song Jae-yeol. Владелец: . Дата публикации: 2018-01-11.

GATE STRUCTURE CUT AFTER FORMATION OF EPITAXIAL ACTIVE REGIONS

Номер патента: US20160027700A1. Автор: Cheng Kangguo,Khakifirooz Ali,STANDAERT Theodorus E.,Faltermeier Johnathan E.,Xie Ruilong,Cai Xiuyu. Владелец: . Дата публикации: 2016-01-28.

SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS COMPRISING INGAN, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND LIGHT EMITTING DEVICES FORMED FROM SUCH SEMICONDUCTOR STRUCTURES

Номер патента: US20140264371A1. Автор: Arena Chantal,Debray Jean-Philippe,McFavilen Heather. Владелец: SOITEC. Дата публикации: 2014-09-18.

SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS COMPRISING INGAN, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND LIGHT EMITTING DEVICES FORMED FROM SUCH SEMICONDUCTOR STRUCTURES

Номер патента: US20140264408A1. Автор: Arena Chantal,Huang Li,Debray Jean-Philippe,McFavilen Heather,Ding Ding. Владелец: SOITEC. Дата публикации: 2014-09-18.

Gate contact structure for semiconductor device

Номер патента: US20210265497A1. Автор: Stefan Mieslinger,Markus Zundel,Andrew Christopher Graeme Wood,Thomas Ostermann. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2021-08-26.

Semiconductor Device with Multi-Branch Gate Contact Structure

Номер патента: US20200357917A1. Автор: Stefan Mieslinger,Markus Zundel,Andrew Christopher Graeme Wood,Thomas Ostermann. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2020-11-12.

Double-gate semiconductor device with gate contacts formed adjacent sidewalls of a fin

Номер патента: US8217450B1. Автор: Bin Yu,HaiHong Wang,Shibly S. Ahmed. Владелец: Globalfoundries Inc. Дата публикации: 2012-07-10.

Gate electrode and gate contact plug layouts for integrated circuit field effect transistors

Номер патента: US8823113B2. Автор: Satoru Yamada,Young-jin Choi,Wook-Je Kim,Kyo-Suk Chae,Sang-yeon Han. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2014-09-02.

Vertical Tunneling Field-Effect Transistor Cell with Coaxially Arranged Gate Contacts and Drain Contacts

Номер патента: US20150236153A1. Автор: CHUANG Harry-Hak-Lay,ZHU Ming,Kuo Cheng-Cheng. Владелец: . Дата публикации: 2015-08-20.

Semiconductor device with sensor potential in the active region

Номер патента: US10096531B2. Автор: Johannes Georg Laven,Christian Jaeger,Frank Dieter Pfirsch,Alexander Philippou. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2018-10-09.

Semiconductor Device with Sensor Potential in the Active Region

Номер патента: US20160099188A1. Автор: Johannes Georg Laven,Christian Jaeger,Frank Dieter Pfirsch,Alexander Philippou. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2016-04-07.

Method and Apparatus for Improving Gate Contact

Номер патента: US20130328134A1. Автор: CHUANG Harry-Hak-Lay,Young Bao-Ru,MII Yuh-Jier,Yeh Chih-Yang. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-12-12.

SELF-ALIGNED GATE CONTACT STRUCTURE

Номер патента: US20150048455A1. Автор: Cheng Kangguo,Basker Veeraraghavan S.,Khakifirooz Ali,Sardesai Viraj Y.,SREENIVASAN Raghavasimhan. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2015-02-19.

ELECTRICALLY ISOLATED GATE CONTACT IN FINFET TECHNOLOGY FOR CAMOUFLAGING INTEGRATED CIRCUITS FROM REVERSE ENGINEERING

Номер патента: US20210249363A1. Автор: Cocchi Ronald P.,Chow Lap Wai,Wang Bryan J.,Baukus James P.. Владелец: RAMBUS INC.. Дата публикации: 2021-08-12.

GATE CONTACT STRUCTURE FOR SEMICONDUCTOR DEVICE

Номер патента: US20210265497A1. Автор: Zundel Markus,Mieslinger Stefan,Wood Andrew Christopher Graeme,Ostermann Thomas. Владелец: . Дата публикации: 2021-08-26.

Gate contact structure for a power device

Номер патента: US20070114601A1. Автор: Wei-Jye Lin,Ming-Jang Lin,Chorng-Wei Liaw. Владелец: Analog and Power Electronics Corp. Дата публикации: 2007-05-24.

Normally-off mesfet device with stacked gate contact

Номер патента: WO2022058269A1. Автор: Farshid Raissi. Владелец: Iii-V Technologies Gmbh. Дата публикации: 2022-03-24.

Backside gate contact

Номер патента: US11658226B2. Автор: Chih-Hao Wang,Cheng-Chi Chuang,Huan-Chieh Su,Lo-Heng Chang,Li-Zhen YU,Chun-Yuan Chen,Lin-Yu HUANG. Владелец: Taiwan Semiconductor Manufacturing Co TSMC Ltd. Дата публикации: 2023-05-23.

GATE CONTACT WITH VERTICAL ISOLATION FROM SOURCE-DRAIN

Номер патента: US20160260812A1. Автор: Horak David V.,Xie Ruilong,Ponoth Shom S.,Pranatharthiharan Balasubramanian. Владелец: . Дата публикации: 2016-09-08.

Semiconductor Device with Multi-Branch Gate Contact Structure

Номер патента: US20200357917A1. Автор: Zundel Markus,Mieslinger Stefan,Wood Andrew Christopher Graeme,Ostermann Thomas. Владелец: . Дата публикации: 2020-11-12.

Gate contact structure of power element

Номер патента: TW200721369A. Автор: Wei-Jye Lin,Ming-Jang Lin,Chorng-Wei Liaw. Владелец: Anpec Electronics Corp. Дата публикации: 2007-06-01.

High voltage MOS array with gate contact on extended drain region

Номер патента: US20090315110A1. Автор: Vladislav Vashchenko. Владелец: National Semiconductor Corp. Дата публикации: 2009-12-24.

SEMICONDUCTOR DEVICES INCLUDING A GATE STRUCTURE BETWEEN ACTIVE REGIONS, AND METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING A GATE STRUCTURE BETWEEN ACTIVE REGIONS

Номер патента: US20140070291A1. Автор: Lee Jin-Woo,Song Tae-yong,Kim Seung-Ho,Lee Ja-Young,Ji Hyun-Mi. Владелец: SAMSUNG ELECTRONICS CO., LTD.. Дата публикации: 2014-03-13.

SEMICONDUCTOR DEVICE INCLUDING A FIRST FIN ACTIVE REGION AND A SECOND FIN ACTIVE REGION

Номер патента: US20200303547A1. Автор: Kim Ju-Youn,YOUN Jong-Mil,HA Tae-Won,Jang Hyung-Soon. Владелец: . Дата публикации: 2020-09-24.

Interleaved string drivers, string driver with narrow active region, and gated LDD string driver

Номер патента: US12112804B2. Автор: Michael A. Smith,Martin W. Popp. Владелец: Micron Technology Inc. Дата публикации: 2024-10-08.

SEMICONDUCTOR DEVICE WITH REDUCED THRESHOLD VARIABILITY HAVING A THRESHOLD ADJUSTING SEMICONDUCTOR ALLOY IN THE DEVICE ACTIVE REGION

Номер патента: US20130113019A1. Автор: Kronholz Stephan,Reichel Carsten,Kammler Thorsten,Zeun Annekathrin. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-05-09.

LOCALIZED IMPLANT INTO ACTIVE REGION FOR ENHANCED STRESS

Номер патента: US20130217198A1. Автор: Nowak Edward J.,ANDERSON Brent A.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-08-22.

FABRICATION OF MOS DEVICE WITH INTEGRATED SCHOTTKY DIODE IN ACTIVE REGION CONTACT TRENCH

Номер патента: US20130280870A1. Автор: Bhalla Anup,Wang Xiaobin,Pan Ji,Wei Sung-Po. Владелец: . Дата публикации: 2013-10-24.

Field-Effect Transistors Having Contacts To 2D Material Active Region

Номер патента: US20180012962A1. Автор: Yeh Ling-Yen,LIU Chi-Wen,Yeo Yee-Chia. Владелец: . Дата публикации: 2018-01-11.

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

Номер патента: US20160035875A1. Автор: Alptekin Emre,Sardesai Viraj Y.,Tran Cung D.,Jain Sameer H.,Vega Reinaldo A.. Владелец: . Дата публикации: 2016-02-04.

FIN END SPACER FOR PREVENTING MERGER OF RAISED ACTIVE REGIONS

Номер патента: US20160035876A1. Автор: Alptekin Emre,Sardesai Viraj Y.,Tran Cung D.,Jain Sameer H.,Vega Reinaldo A.. Владелец: . Дата публикации: 2016-02-04.

Semiconductor Device with Sensor Potential in the Active Region

Номер патента: US20160099188A1. Автор: Philippou Alexander,Jaeger Christian,Laven Johannes Georg,Pfirsch Frank Dieter. Владелец: . Дата публикации: 2016-04-07.

METHOD TO DEFINE THE ACTIVE REGION OF A TRANSISTOR EMPLOYING A GROUP III-V SEMICONDUCTOR MATERIAL

Номер патента: US20160111501A1. Автор: Wong King-Yuen,YU Jiun-Lei Jerry,CHEN Po-Chih,LIN Yu-Syuan,CHANG YAO-CHUNG. Владелец: . Дата публикации: 2016-04-21.

Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions

Номер патента: US20200152644A1. Автор: Liu Haitao,Ramaswamy Durai Vishak Nirmal,Karda Kamal M.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-05-14.

ACTIVE REGIONS WITH COMPATIBLE DIELECTRIC LAYERS

Номер патента: US20160172459A1. Автор: Ranade Pushkar. Владелец: . Дата публикации: 2016-06-16.

Self-Aligned Passivation of Active Regions

Номер патента: US20140256105A1. Автор: Wann Clement Hsingjen,Yeh Ling-Yen,Shih Chi-Yuan,Tsai Wei-Chun. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2014-09-11.

FINFET WITH ACTIVE REGION SHAPED STRUCTURES AND CHANNEL SEPARATION

Номер патента: US20150187947A1. Автор: Chi Min-Hwa,WONG Hoong Shing. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2015-07-02.

Semiconductor Device having Group III-V Material Active Region and Graded Gate Dielectric

Номер патента: US20160197173A1. Автор: Dewey Gilbert,Pillarisetty Ravi,Radosavljevic Marko,Metz Matthew V.. Владелец: Intel Corporation. Дата публикации: 2016-07-07.

SEMICONDUCTOR DEVICE HAVING ASYMMETRIC ACTIVE REGION AND METHOD OF FORMING THE SAME

Номер патента: US20170200823A1. Автор: CHUNG Chulho,KANG Jun-gu,PARK MYOUNGKYU. Владелец: . Дата публикации: 2017-07-13.

Integrated Assemblies Having Ferroelectric Transistors with Heterostructure Active Regions

Номер патента: US20210242221A1. Автор: Liu Haitao,Ramaswamy Durai Vishak Nirmal,Karda Kamal M.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-08-05.

NON-PLANAR SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION WITH MULTI-DIELECTRIC GATE STACK

Номер патента: US20160240612A1. Автор: Mukherjee Niloy,Chu-Kung Benjamin,Dewey Gilbert,Pillarisetty Ravi,Radosavljevic Marko. Владелец: . Дата публикации: 2016-08-18.

NON-PLANAR SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION WITH MULTI-DIELECTRIC GATE STACK

Номер патента: US20140332852A1. Автор: Mukherjee Niloy,Chu-Kung Benjamin,Dewey Gilbert,Pillarisetty Ravi,Radosavljevic Marko. Владелец: . Дата публикации: 2014-11-13.

SEMICONDUCTOR DEVICES HAVING TAPERED ACTIVE REGIONS

Номер патента: US20160254348A1. Автор: Bhuwalka Krishna Kumar,LEE Keunho,Kwon Uihui,WU Zhenhua. Владелец: . Дата публикации: 2016-09-01.

Quantum cascade laser design with stepped well active region

Номер патента: US09548590B2. Автор: Feng Xie,Chung-En Zah,Catherine Genevieve Caneau. Владелец: Thorlabs Quantum Electronics Inc. Дата публикации: 2017-01-17.

Multi-active-region cascaded bragg reflection waveguide edge-emitting diode laser

Номер патента: US20240088624A1. Автор: Lijun Wang,Lijie Wang,Cunzhu Tong,Hangyu PENG. Владелец: Jlight Semiconductor Technology Co Ltd. Дата публикации: 2024-03-14.

Vertical-cavity surface-emitting laser (vcsel) with cascaded active region

Номер патента: US20240235160A9. Автор: Elad Mentovich,Tamir Sharkaz,Yuri Berk,Vladimir lakovlev. Владелец: MELLANOX TECHNOLOGIES LTD. Дата публикации: 2024-07-11.

Multi-junction VCSEL with compact active region stack

Номер патента: US11757256B2. Автор: Giuseppe Tandoi. Владелец: II VI Delaware Inc. Дата публикации: 2023-09-12.

Multi-active-region cascaded semiconductor laser

Номер патента: EP4020725A1. Автор: Jun Wang,Heng Liu,Yao XIAO,Shaoyang TAN,Quanling LI. Владелец: Everbright Institute Of Semiconductor Photonics Co Ltd. Дата публикации: 2022-06-29.

Bipolar plate having duct divisions present in the active region, and a fuel cell stack

Номер патента: US20230378484A1. Автор: Sebastian Voigt,Oliver Keitsch,Armin Siebel,Fabian Lippl. Владелец: Audi AG. Дата публикации: 2023-11-23.

Quantum cascade laser design with stepped well active region

Номер патента: EP2786458A1. Автор: Feng Xie,Chung-En Zah,Catherine G. Caneau. Владелец: Corning Inc. Дата публикации: 2014-10-08.

Quantum cascade laser design with stepped well active region

Номер патента: WO2013082070A1. Автор: Feng Xie,Chung-En Zah,Catherine G Caneau. Владелец: CORNING INCORPORATED. Дата публикации: 2013-06-06.

Quantum cascade laser system with angled active region

Номер патента: US11757251B2. Автор: Arkadiy Lyakh. Владелец: University of Central Florida Research Foundation Inc UCFRF. Дата публикации: 2023-09-12.

Semiconductor laser comprising a plurality of optically active regions

Номер патента: US20040120377A1. Автор: John Marsh,Shin-Sung Kim. Владелец: Individual. Дата публикации: 2004-06-24.

Heterostructure diode injection laser having a constricted active region

Номер патента: CA1096962A. Автор: Peter S. Zory, Jr.,Martin B. Small. Владелец: International Business Machines Corp. Дата публикации: 1981-03-03.

Semiconductor laser comprising a plurality of optically active regions

Номер патента: EP1362395B1. Автор: John Haig Marsh,Shin-Sung Kim. Владелец: University of Glasgow. Дата публикации: 2005-04-13.

Vertical-cavity surface-emitting laser (vcsel) with cascaded active region

Номер патента: US20240136795A1. Автор: Elad Mentovich,Tamir Sharkaz,Yuri Berk,Vladimir lakovlev. Владелец: MELLANOX TECHNOLOGIES LTD. Дата публикации: 2024-04-25.

Strain-engineered cladding layer for optimized active region strain and improved laser diode performance

Номер патента: US20220368108A1. Автор: Zhigang Chen,Manoj Kanskar. Владелец: NLight Inc. Дата публикации: 2022-11-17.

Strain-engineered cladding layer for optimized active region strain and improved laser diode performance

Номер патента: WO2021067033A1. Автор: Zhigang Chen,Manoj Kanskar. Владелец: nLIGHT, Inc.. Дата публикации: 2021-04-08.

Method of fabricating active layers in a laser utilizing InP-based active regions

Номер патента: US20040165631A1. Автор: YING-LAN Chang,Ashish Tandon. Владелец: Individual. Дата публикации: 2004-08-26.

Long wavelength VCSEL active region using Sb in GaAsN barrier layers and InGaAsN quantum wells

Номер патента: US20050243888A1. Автор: Ralph Johnson. Владелец: Finisar Corp. Дата публикации: 2005-11-03.

Quantum well active region with three dimensional barriers and fabrication

Номер патента: WO2009023046A2. Автор: Victor C. Elarde,James J. Coleman. Владелец: The Board Of Trustees Of The University Of Illionis. Дата публикации: 2009-02-19.

Quantum well active region with three dimensional barriers and fabrication

Номер патента: WO2009023046A3. Автор: James J Coleman,Victor C Elarde. Владелец: Victor C Elarde. Дата публикации: 2009-04-16.

Semiconductor laser with active layer having a radiation emitting active region therein which extends through and is bounded by a current limiting blocking layer

Номер патента: US4819243A. Автор: Jan Opschoor. Владелец: US Philips Corp. Дата публикации: 1989-04-04.

Quantum cascade laser with angled active region and related methods

Номер патента: US20180048118A1. Автор: Arkadiy Lyakh. Владелец: University of Central Florida Research Foundation Inc UCFRF. Дата публикации: 2018-02-15.

Method for making quantum cascade laser with angled active region

Номер патента: US20190260181A1. Автор: Arkadiy Lyakh. Владелец: University of Central Florida Research Foundation Inc UCFRF. Дата публикации: 2019-08-22.

Quantum cascade laser system with angled active region

Номер патента: US20200395736A1. Автор: Arkadiy Lyakh. Владелец: University of Central Florida Research Foundation Inc UCFRF. Дата публикации: 2020-12-17.

Quantum cascade laser system with angled active region

Номер патента: US20230131797A1. Автор: Arkadiy Lyakh. Владелец: University of Central Florida Research Foundation Inc UCFRF. Дата публикации: 2023-04-27.

QCL with wide active region and thinned stages and related methods

Номер патента: US10673209B2. Автор: Arkadiy Lyakh,Matthew Suttinger. Владелец: University of Central Florida Research Foundation Inc UCFRF. Дата публикации: 2020-06-02.

Qcl with wide active region and thinned stages and related methods

Номер патента: US20190115727A1. Автор: Arkadiy Lyakh,Matthew Suttinger. Владелец: University of Central Florida Research Foundation Inc UCFRF. Дата публикации: 2019-04-18.

Electro-optical device with lateral active regions

Номер патента: US20190252860A1. Автор: Lukas Czornomaz,Stefan Abel,Bert Jan Offrein,Charles CAER. Владелец: International Business Machines Corp. Дата публикации: 2019-08-15.

Electro-optical device with lateral active regions

Номер патента: US20190252859A1. Автор: Lukas Czornomaz,Stefan Abel,Bert Jan Offrein,Charles CAER. Владелец: International Business Machines Corp. Дата публикации: 2019-08-15.

Etch-stopped SOI back-gate contact

Номер патента: US20020084488A1. Автор: Theodore Houston. Владелец: Texas Instruments Inc. Дата публикации: 2002-07-04.

Offset gate contact

Номер патента: EP4032123A1. Автор: Kern Rim,Jun Yuan,Haining Yang,Chihwei Kuo. Владелец: Qualcomm Inc. Дата публикации: 2022-07-27.

Etch-stopped SOI back-gate contact

Номер патента: US20030173621A1. Автор: Theodore Houston. Владелец: Individual. Дата публикации: 2003-09-18.

Semiconductor transistor device structure with back side gate contact plugs, and related manufacturing method

Номер патента: US20110169084A1. Автор: Bin Yang,Rohit Pal,Michael Hargrove. Владелец: Globalfoundries Inc. Дата публикации: 2011-07-14.

Method of strain engineering and related optical device using a gallium and nitrogen containing active region

Номер патента: US09570888B1. Автор: James W. RARING,Christiane Poblenz Elsass. Владелец: Soraa Laser Diode Inc. Дата публикации: 2017-02-14.

Control gate contact window region morphology improvement method

Номер патента: CN105977208A. Автор: 张怡,沈思杰. Владелец: Shanghai Huahong Grace Semiconductor Manufacturing Corp. Дата публикации: 2016-09-28.

METHODS OF FORMING CONDUCTIVE SPACERS FOR GATE CONTACTS AND THE RESULTING DEVICE

Номер патента: US20190035692A1. Автор: Xie Ruilong,Liebmann Lars W.,Paul Bipul C.,Chanemougame Daniel,Cave Nigel G.. Владелец: . Дата публикации: 2019-01-31.

Active region electrically programmable fuse with gate structure as silicide block

Номер патента: US20240355731A1. Автор: Hari Balan,Myo Aung Maung,Thanh Hoa Phung,Anurag Swarnkar. Владелец: GLOBALFOUNDRIES SINGAPORE PTE LTD. Дата публикации: 2024-10-24.

STATIC RANDOM ACCESS MEMORY (SRAM) BIT CELL CIRCUITS WITH A MINIMUM DISTANCE BETWEEN A STORAGE CIRCUIT ACTIVE REGION AND A READ PORT CIRCUIT ACTIVE REGION TO REDUCE AREA AND SRAM BIT CELL ARRAY CIRCUITS

Номер патента: US20220102360A1. Автор: Sharma Sunil,GHOSH Sonia,DESAI Channappa,Biradar Rahul. Владелец: . Дата публикации: 2022-03-31.

Semiconductor Device and Method of Forming Hybrid Substrate with IPD Over Active Semiconductor Wafer

Номер патента: US20240047386A1. Автор: YongTaek Lee,OhYoung Kwon,SeungMan Hong. Владелец: Stats Chippac Pte Ltd. Дата публикации: 2024-02-08.

Process Flow to Reduce Hole Defects in P-Active Regions and to Reduce Across-Wafer Threshold Voltage Scatter

Номер патента: US20120282763A1. Автор: Andreas Ott,Stephan Kronholz. Владелец: Globalfoundries Inc. Дата публикации: 2012-11-08.

SEMICONDUCTOR ARRANGEMENT HAVING CAPACITOR SEPARATED FROM ACTIVE REGION

Номер патента: US20170025417A1. Автор: Tsai Chia-Shiung,Liu Shih-Chang,Chen Xiaomeng,Hsu Chern-Yow,Wang Cheng-Jong. Владелец: . Дата публикации: 2017-01-26.

SEMICONDUCTOR DEVICE COMPRISING STRING STRUCTURES FORMED ON ACTIVE REGION

Номер патента: US20140162423A1. Автор: LEE Changhyun,CHOI Jungal. Владелец: . Дата публикации: 2014-06-12.

SEMICONDUCTOR ARRANGEMENT HAVING CAPACITOR SEPARATED FROM ACTIVE REGION

Номер патента: US20180102368A1. Автор: Tsai Chia-Shiung,Liu Shih-Chang,Wang Chen-Jong,Chen Xiaomeng,Hsu Chern-Yow. Владелец: . Дата публикации: 2018-04-12.

SEMICONDUCTOR DEVICE HAVING REDUCED-DAMAGE ACTIVE REGION AND METHOD OF MANUFACTURING THE SAME

Номер патента: US20150140749A1. Автор: KIM KI-CHUL. Владелец: . Дата публикации: 2015-05-21.

Insulating layer for planarization and definition of the active region of a nanowire device

Номер патента: US20160172538A1. Автор: Scott Brad Herner. Владелец: GLO AB. Дата публикации: 2016-06-16.

Semiconductor structures having active regions comprising ingan, methods of forming such semiconductor structures, and light emitting devices formed from such semiconductor structures

Номер патента: US20140264265A1. Автор: Chantal Arena,Jean-Philippe Debray,Richard Scott Kern. Владелец: Soitec SA. Дата публикации: 2014-09-18.

Semiconductor device with backside N-type layer at active region/termination region boundary and extending into action region

Номер патента: US10510904B2. Автор: Hidenori Fujii,Fumihito MASUOKA. Владелец: Mitsubishi Electric Corp. Дата публикации: 2019-12-17.

Transistor and method of fabrication of the same including a gate contact formed in a recess through the passivation dielectric layer in contact with the active layer

Номер патента: US11889768B2. Автор: Konstantin Osipov,Hans-Joachim Wuerfl. Владелец: Ferdinand Braun Institut Ggmbh Leibniz Institut fur Hoechstfrequenztechnik. Дата публикации: 2024-01-30.

NITRIDE STRUCTURES HAVING LOW CAPACITANCE GATE CONTACTS INTEGRATED WITH COPPER DAMASCENE STRUCTURES

Номер патента: US20200083167A1. Автор: Kazior Thomas E.,LaRoche Jeffrey R.,Ip Kelly P.,Chumbes Eduardo M.. Владелец: Raytheon Company. Дата публикации: 2020-03-12.

Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment

Номер патента: US6548333B2. Автор: Richard Peter Smith. Владелец: Cree Inc. Дата публикации: 2003-04-15.

Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same

Номер патента: CA2453318A1. Автор: Richard Peter Smith. Владелец: Individual. Дата публикации: 2003-01-23.

Aluminum gallium nitride/gallium nitride high electron mobility transistors having a gate contact on a gallium nitride based cap segment and methods of fabricating same

Номер патента: US20020066908A1. Автор: Richard Smith. Владелец: Individual. Дата публикации: 2002-06-06.

SEMICONDUCTOR DEVICE INCLUDING GATE ELECTRODE PROVIDED OVER ACTIVE REGION IN P-TYPE NITRIDE SEMICONDUCTOR LAYER AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS

Номер патента: US20140054606A1. Автор: Yamada Atsushi. Владелец: FUJITSU LIMITED. Дата публикации: 2014-02-27.

METHOD OF FORMING A SEMICONDUCTOR DEVICE WITH A GATE CONTACT POSITIONED ABOVE THE ACTIVE REGION

Номер патента: US20170309714A1. Автор: Kim Hoon,Xie Ruilong,Park Chanro,Sung Min Gyu. Владелец: . Дата публикации: 2017-10-26.

GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT FIELD EFFECT TRANSISTORS

Номер патента: US20160322354A1. Автор: YAMADA Satoru,Chae Kyo-Suk,CHOI Young-Jin,Kim Wook-Je,HAN Sang-Yeon. Владелец: . Дата публикации: 2016-11-03.

Method and structure for forming ETSOI capacitors, diodes, resistors and back-gate contacts

Номер патента: DE112012004824T5. Автор: c/o IBM Corp. Cheng Kangguo,c/o IBM Corp. Adam Thomas N.,c/o IBM Corp. Khakifirooz Ali,c/o IBM Corp. Reznicek Alexander. Владелец: International Business Machines Corp. Дата публикации: 2014-08-14.

Method and structure for forming etsoi capacitors, diodes, resistors and back gate contacts

Номер патента: GB201410067D0. Автор: . Владелец: International Business Machines Corp. Дата публикации: 2014-07-16.

Method and structure for forming ETSOI capacitors, diodes, resistors and back-gate contacts

Номер патента: DE112012004824B4. Автор: c/o IBM Corp. Cheng Kangguo,c/o IBM Corp. Adam Thomas N.,c/o IBM Corp. Khakifirooz Ali,c/o IBM Corp. Reznicek Alexander. Владелец: Globalfoundries Inc. Дата публикации: 2019-04-04.

Semiconductor Device Including a Gate Contact Structure

Номер патента: US20180269296A1. Автор: Weyers Joachim,SCHLOEGL Andreas,Kowalik-Seidl Katarzyna,Vecino Vazquez Enrique. Владелец: . Дата публикации: 2018-09-20.

GATE CONTACT WITH VERTICAL ISOLATION FROM SOURCE-DRAIN

Номер патента: US20150357409A1. Автор: Horak David V.,Xie Ruilong,Ponoth Shom S.,Pranatharthiharan Balasubramanian. Владелец: . Дата публикации: 2015-12-10.

Earthed capacitor for static RAM cell, has electrode constituting active region strongly doped from semiconductor component, and another electrode constituting conducting region enclosed by insulator formed beneath active region

Номер патента: FR2849962A1. Автор: Jean Pierre Schoellkopf. Владелец: STMICROELECTRONICS SA. Дата публикации: 2004-07-16.

SEMICONDUCTOR DEVICES INCLUDING A RECESSED ACTIVE REGION, AND METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING A RECESSED ACTIVE REGION

Номер патента: US20140117492A1. Автор: Hong HyeongSun,Hwang Yoosang,CHOI Sungkwan,Lee Kyuhyun,PARK Junghwan,Kim Bongsoo. Владелец: . Дата публикации: 2014-05-01.

ACTIVE REGION, ACTIVE REGION ARRAY AND FORMATION METHOD THEREOF

Номер патента: US20220310615A1. Автор: LIU ChihCheng. Владелец: CHANGXIN MEMORY TECHNOLOGIES, INC.. Дата публикации: 2022-09-29.

SEMICONDUCTOR STRUCTURE WITH DISPERSEDLY ARRANGED ACTIVE REGION TRENCHES

Номер патента: US20130270669A1. Автор: HUANG CHAO-HSIN,CHUANG CHIH-CHIANG. Владелец: TAIWAN SEMICONDUCTOR CO., LTD.. Дата публикации: 2013-10-17.

SEMICONDUCTOR DEVICE INCLUDING AN ACTIVE REGION AND TWO LAYERS HAVING DIFFERENT STRESS CHARACTERISTICS

Номер патента: US20140054704A1. Автор: Winstead Brian A.,Adams Vance H.,Grudowski Paul A.. Владелец: Freescale Semiconductor, Inc.. Дата публикации: 2014-02-27.

Semiconductor power device including wire or ribbon bonds over device active region

Номер патента: US20200013692A1. Автор: Gabriele Formicone. Владелец: Integra Technologies Inc. Дата публикации: 2020-01-09.

SEMICONDUCTOR DEVICES HAVING MULTI-CHANNEL ACTIVE REGIONS AND METHODS OF FORMING SAME

Номер патента: US20220045103A1. Автор: JUNG Soonmoon,Kim Munhyeon,Ha Daewon. Владелец: . Дата публикации: 2022-02-10.

SEMICONDUCTOR DEVICES HAVING ACTIVE REGIONS AT DIFFERENT LEVELS

Номер патента: US20160104708A1. Автор: KIM Juyoun. Владелец: . Дата публикации: 2016-04-14.

METHODS OF FABRICATING SEMICONDUCTOR DEVICES INCLUDING FIN-SHAPED ACTIVE REGIONS

Номер патента: US20160181243A1. Автор: Baek Jae-Jik,Yoon Bo-Un,Han Jeong-Nam,CHA Ji-Hoon,Song Myung-Geun,YOUN YOUNG-SANG. Владелец: . Дата публикации: 2016-06-23.

STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN ACTIVE AREA

Номер патента: US20180211947A1. Автор: Ramachandran Ravikumar,Chu Albert M.,Na Myung-Hee. Владелец: . Дата публикации: 2018-07-26.

STANDARD CELL ARCHITECTURE WITH AT LEAST ONE GATE CONTACT OVER AN ACTIVE AREA

Номер патента: US20180211948A1. Автор: Ramachandran Ravikumar,Chu Albert M.,Na Myung-Hee. Владелец: . Дата публикации: 2018-07-26.

Integrated Circuit Including Gate Electrode Level Region Including Cross-Coupled Transistors Having Gate Contacts Located Over Inner Portion of Gate Electrode Level Region and Offset Gate Level Feature Line Ends

Номер патента: US20130119476A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: . Дата публикации: 2013-05-16.

Improvement of high frequency operation of discrete MOSFET - by removal of an external parasitic capacitance between drain and gate, by mounting the external gate contact above the source contact

Номер патента: DE4222785A1. Автор: Shigekazu Yoshida. Владелец: Mitsubishi Electric Corp. Дата публикации: 1993-01-21.

Integrated Circuit Including Cross-Coupled Transistors Having Gate Electrodes Formed Within Gate Level Feature Layout Channels With Gate Contact Position and Offset Specifications

Номер патента: US20130214361A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: Tela Innovations, Inc.. Дата публикации: 2013-08-22.

Integrated circuit including cross-coupled transistors having gate electrodes formed within gate level feature layout channels with gate contact position and offset specifications

Номер патента: US8274099B2. Автор: Scott T. Becker. Владелец: Tela Innovations Inc. Дата публикации: 2012-09-25.

Cross-Coupled Transistor Circuit Defined Having Diffusion Regions of Common Node on Opposing Sides of Same Gate Electrode Track with At Least Two Non-Inner Positioned Gate Contacts

Номер патента: US20130200465A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: . Дата публикации: 2013-08-08.

GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT FIELD EFFECT TRANSISTORS

Номер патента: US20140353768A1. Автор: YAMADA Satoru,Chae Kyo-Suk. Владелец: . Дата публикации: 2014-12-04.

THREE-DIMENSIONAL MEMORY DEVICE WITH SHORT-FREE SOURCE SELECT GATE CONTACT VIA STRUCTURE AND METHOD OF MAKING THE SAME

Номер патента: US20180261613A1. Автор: Ariyoshi Junichi. Владелец: . Дата публикации: 2018-09-13.

Method of making back gate contact for silicon on insulator technology

Номер патента: US5610083A. Автор: Lap Chan,Ravis H. Sundaresan,Che-Chia Wei. Владелец: Chartered Semiconductor Manufacturing Pte Ltd. Дата публикации: 1997-03-11.

Process for making ICs from standard logic cells that utilize TS cut mask(s) and avoid DFM problems caused by closely spaced gate contacts and TSCUT jogs

Номер патента: US10263011B1. Автор: Jonathan HAIGH. Владелец: PDF Solutions Inc. Дата публикации: 2019-04-16.

Cross-Coupled Transistor Circuit Including Offset Inner Gate Contacts

Номер патента: US20130207197A1. Автор: Becker Scott T.,Mali Jim,Lambert Carole. Владелец: . Дата публикации: 2013-08-15.

BOTTOM SELECT GATE CONTACTS FOR CENTER STAIRCASE STRUCTURES IN THREE-DIMENSIONAL MEMORY DEVICES

Номер патента: US20220139950A1. Автор: TANG Qiang,GUO Jason. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-05-05.

STANDARD CELL GLOBAL ROUTING CHANNELS OVER ACTIVE REGIONS

Номер патента: US20150228650A1. Автор: Sun Tianjia,Li Lingchuan,Wu Shumin. Владелец: OMNIVISION TECHNOLOGIES, INC.. Дата публикации: 2015-08-13.

Standard cell global routing channels over active regions

Номер патента: US9136267B2. Автор: Tianjia Sun,Lingchuan Li,Shumin Wu. Владелец: Omnivision Technologies Inc. Дата публикации: 2015-09-15.

Infrared detector having active regions and isolating regions formed of CdHgTe

Номер патента: US5602414A. Автор: Kazuo Mizuguchi,Mari Tsugami,Kotaro Mitsui,Akihiro Takami,Seiji Ochi,Norio Hayafuji,Hirotaka Kizuki,Yuji Ohkura,Manabu Katoh,Zenpei Kawazu. Владелец: Mitsubishi Electric Corp. Дата публикации: 1997-02-11.

III-nitride nanowire LED with strain modified surface active region and method of making thereof

Номер патента: US09882086B2. Автор: PING Wang,Linda Romano. Владелец: GLO AB. Дата публикации: 2018-01-30.

Semiconductor arrangement comprises a substrate with an electrically active region, an insulating region, an electrically conducting region, an electrically conducting supply lead, an auxiliary strip conductor and a highly doped region

Номер патента: DE10132641A1. Автор: Andreas Martin,Josef Fazekas. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2003-01-23.

Pad over active circuit system and method with meshed support structure

Номер патента: US20080067687A1. Автор: Inderjit Singh,Joseph Greco,Howard Marks. Владелец: Nvidia Corp. Дата публикации: 2008-03-20.

DRAM cell configuration has connecting line that electrically connects active regions of two selection transistors of adjacent rows, to form common terminal region for two trench capacitors

Номер патента: DE10302670B3. Автор: Peter Beer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-04-08.

DRAM cell configuration has connecting line that electrically connects active regions of two selection transistors of adjacent rows, to form common terminal region for two trench capacitors

Номер патента: DE10245538A1. Автор: Peter Beer. Владелец: INFINEON TECHNOLOGIES AG. Дата публикации: 2004-04-08.

Light emitting devices with compact active regions

Номер патента: TWI336527B. Автор: Yu-Chen Shen,Stephen A Stockman,Mira S Misra. Владелец: Philips Lumileds Lighting Co. Дата публикации: 2011-01-21.

Methods for packaging integrated circuit devices including cavities adjacent active regions and related structures

Номер патента: AU2980300A. Автор: Walter M. Marcinkiewicz. Владелец: Ericsson Inc. Дата публикации: 2000-08-29.

Light emitting devices with inhomogeneous quantum well active regions

Номер патента: US20100197062A1. Автор: Christopher L. Chua,Zhihong Yang,John E. Northrup,Noble Marshall Johnson. Владелец: Palo Alto Research Center Inc. Дата публикации: 2010-08-05.

Chirped multi-well active region led

Номер патента: AU2001232938A1. Автор: YING-LAN Chang,Michael R. Krames,Christopher P. Kocot,Stephen A. Stockman,Patrick N. Grillot,Robert C. Taber,Eugene I. Chen. Владелец: LUMILEDS LLC. Дата публикации: 2001-07-31.

Light emitting devices with inhomogeneous quantum well active regions

Номер патента: US8048703B2. Автор: Christopher L. Chua,Zhihong Yang,John E. Northrup,Noble Marshall Johnson. Владелец: Palo Alto Research Center Inc. Дата публикации: 2011-11-01.

Active region including nanodots (referred to also as "quantum dots") in matrix crystal grown on SI substrate and constituted of zincblende

Номер патента: GB201521427D0. Автор: . Владелец: NITTO OPTICAL CO Ltd AND SOLARTES LAB Ltd. Дата публикации: 2016-01-20.

Photovoltaic cells with a graded active region achieved using stamp transfer printing

Номер патента: US20160260917A1. Автор: Stephen R. Forrest,Jun Yeob Lee,Yong Joo Cho. Владелец: Industry Academic Cooperation Foundation of Dankook University. Дата публикации: 2016-09-08.

Photovoltaic cells with a graded active region achieved using stamp transfer printing

Номер патента: US09978968B2. Автор: Stephen R. Forrest,Jun Yeob Lee,Yong Joo Cho. Владелец: Industry Academic Cooperation Foundation of Dankook University. Дата публикации: 2018-05-22.

Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)

Номер патента: US09755111B2. Автор: Kazutaka Terashima,Suzuka Nishimura,Muneyuki HIRAI. Владелец: SOLARTES LAB Ltd. Дата публикации: 2017-09-05.

Two-color barrier photodetector with dilute-nitride active region

Номер патента: US09698192B1. Автор: Adam M. Crook,Matthew J. Reason,Barrett Spells. Владелец: Lockheed Martin Corp. Дата публикации: 2017-07-04.

Group probing over active area pads arrangement

Номер патента: TW200905844A. Автор: Ping-Chang Wu,Chieh-Ching Huang. Владелец: United Microelectronics Corp. Дата публикации: 2009-02-01.

Semiconductor chip capable of implementing wire bonding over active circuits

Номер патента: TWI246172B. Автор: Kun-Chih Wang,Chien-Li Kuo,Jui-Meng Jao,Bing-Chang Wu. Владелец: United Microelectronics Corp. Дата публикации: 2005-12-21.

Semiconductor chip capable of implementing wire bonding over active circuits

Номер патента: TW200541030A. Автор: Kun-Chih Wang,Jui-Meng Jao,Bing-Chang Wu,Chie-Li Kuo. Владелец: United Microelectronics Corp. Дата публикации: 2005-12-16.

Wire bonding over active circuits

Номер патента: US20090236742A1. Автор: Qwai H. Low. Владелец: LSI Corp. Дата публикации: 2009-09-24.

Bonding pad structure over active circuitry

Номер патента: US09922947B2. Автор: Dario Vitello,Federico Frego,Salvatore Latino. Владелец: STMICROELECTRONICS SRL. Дата публикации: 2018-03-20.

LIGHT-EMITTING DEVICES WITH IMPROVED ACTIVE-REGION

Номер патента: US20130217166A1. Автор: Liu Ying,YAN CHUNHUI,ZHANG JIANPING,ZHAO FANGHAI. Владелец: INVENLUX CORPORATION. Дата публикации: 2013-08-22.

SEMICONDUCTOR DEVICES HAVING INCREASED CONTACT AREAS BETWEEN CONTACTS AND ACTIVE REGIONS AND METHODS OF FABRICATING THE SAME

Номер патента: US20130256828A1. Автор: LEE WONCHUL,KIM Eun A.,LEE Ja Young. Владелец: . Дата публикации: 2013-10-03.

OPTICAL PROXIMITY CORRECTION FOR ACTIVE REGION DESIGN LAYOUT

Номер патента: US20130285194A1. Автор: Lin Chih-Hsun,Wang Ling-Sung,Chao Chih-kang,Lin Mei-Hsuan,Lu Chih-Chan,Wang Jen-Pan. Владелец: . Дата публикации: 2013-10-31.

SEMICONDUCTOR DEVICE INCLUDING LINE-TYPE ACTIVE REGION AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20140110773A1. Автор: KIM Kyung Do. Владелец: SK HYNIX INC.. Дата публикации: 2014-04-24.

SHORT WAVELENGTH INFRARED OPTOELECTRONIC DEVICES HAVING GRADED OR STEPPED DILUTE NITRIDE ACTIVE REGIONS

Номер патента: US20220045230A1. Автор: Suarez Ferran,MAROS AYMERIC,Ding Ding. Владелец: ARRAY PHOTONICS, INC.. Дата публикации: 2022-02-10.

CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICONDUCTOR DEVICES

Номер патента: US20140113417A1. Автор: Wong Robert C.,Sardesai Viraj V.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-04-24.

METHOD FOR FORMING SHALLOW TRENCHES OF THE DUAL ACTIVE REGIONS

Номер патента: US20180033810A1. Автор: ZHANG Xusheng,ZHU Jun,Xu Jin,Ren Yu,Lv Yukun,Chen Minjie,JING Quan. Владелец: . Дата публикации: 2018-02-01.

DISPLAY DEVICE WITH EMBEDDED BIOMETRIC DETECTION FUNCTION IN ACTIVE REGION

Номер патента: US20190042825A1. Автор: Chang Yaw-Guang,HE Jia-Ming. Владелец: . Дата публикации: 2019-02-07.

ACTIVE REGION CONTAINING NANODOTS (ALSO REFERRED TO AS "QUANTUM DOTS") IN MOTHER CRYSTAL FORMED OF ZINC BLENDE-TYPE (ALSO REFERRED TO AS "CUBIC CRYSTAL-TYPE") AlyInxGal-y-xN CRYSTAL(Y . 0, X>0) GROWN ON Si SUBSTRATE, AND LIGHTEMITTING DEVICE USING THE SAME (LED AND LD)

Номер патента: US20160087153A1. Автор: Terashima Kazutaka,NISHIMURA Suzuka,HIRAI Muneyuki. Владелец: . Дата публикации: 2016-03-24.

WAFER BONDING FOR EMBEDDING ACTIVE REGIONS WITH RELAXED NANOFEATURES

Номер патента: US20220102580A1. Автор: DenBaars Steven P.,Keller Stacia,Mishra Umesh K.,Reilly Caroline E.. Владелец: The Regents of the University of California. Дата публикации: 2022-03-31.

SEMICONDUCTOR MEMORY DEVICE HAVING A VERTICAL ACTIVE REGION

Номер патента: US20200091245A1. Автор: Ando Takashi,Cheng Kangguo,Li Juntao,Kong Dexin. Владелец: . Дата публикации: 2020-03-19.

Semiconductor Heterostructure with Multiple Active Regions

Номер патента: US20180097157A1. Автор: Dobrinsky Alexander,Shur Michael,Simin Grigory. Владелец: SENSOR ELECTRONIC TECHNOLOGY, INC.. Дата публикации: 2018-04-05.

SEMICONDUCTOR ARRANGEMENT HAVING CAPACITOR SEPARATED FROM ACTIVE REGION

Номер патента: US20150115409A1. Автор: Hsu Chern-Yow. Владелец: Taiwan Semiconductor Manufacturing Company Limited. Дата публикации: 2015-04-30.

Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus

Номер патента: US20170110599A1. Автор: Shim Il Kwon,Han Byung Joon,Kuan Heap Hoe. Владелец: STATS ChipPAC Pte. Ltd.. Дата публикации: 2017-04-20.

Integrated Assemblies Having Shield Lines Between Neighboring Transistor Active Regions

Номер патента: US20210125642A1. Автор: Mariani Marcello,Rigano Antonino. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2021-04-29.

RED MICRO-LED WITH DOPANTS IN ACTIVE REGION

Номер патента: US20210126164A1. Автор: Tyagi Anurag,Hwang David,Grundmann Michael,Broell Markus,Tonkikh Alexander,LESTER Steven David,LHEUREUX Guillaume. Владелец: . Дата публикации: 2021-04-29.

SEMICONDUCTOR STRUCTURES HAVING ACTIVE REGIONS INCLUDING INDIUM GALLIUM NITRIDE, METHODS OF FORMING SUCH SEMICONDUCTOR STRUCTURES, AND RELATED LIGHT EMITTING DEVICES

Номер патента: US20160126410A1. Автор: Arena Chantal,Huang Li,Debray Jean-Philippe,McFavilen Heather,Ding Ding. Владелец: . Дата публикации: 2016-05-05.

IMAGE SENSOR INCLUDING ACTIVE REGIONS

Номер патента: US20200119082A1. Автор: PARK Sung-Kun,LEE Kyoung-In,Oh Sun-Ho. Владелец: . Дата публикации: 2020-04-16.

Dual interlocked storage cell (dice) latch sharing active region with neighbor dice latch and semiconductor device including the same

Номер патента: US20180130518A1. Автор: Dong Uc KO. Владелец: SK hynix Inc. Дата публикации: 2018-05-10.

THREE-DIMENSIONAL NOR ARRAY INCLUDING ACTIVE REGION PILLARS AND METHOD OF MAKING THE SAME

Номер патента: US20210175251A1. Автор: Alsmeier Johann,Zhang Yanli. Владелец: . Дата публикации: 2021-06-10.

III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof

Номер патента: US20180145218A1. Автор: Romano Linda,Wang Ping. Владелец: . Дата публикации: 2018-05-24.

Integrated Assemblies Which Include Metal-Containing Interconnects to Active-Region Pillars, and Methods of Forming Integrated Assemblies

Номер патента: US20200176454A1. Автор: Simsek-Ege Arzum F.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-06-04.

SEMICONDUCTOR DEVICE INCLUDING STANDARD CELLS WITH COMBINED ACTIVE REGION

Номер патента: US20210224458A1. Автор: GUO Ta-Pen,Prasad Guru. Владелец: . Дата публикации: 2021-07-22.

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION AND METHOD OF MAKING THEREOF

Номер патента: US20150207028A1. Автор: Romano Linda,Svensson Patrik,Yi Sungsoo,Gardner Nathan. Владелец: . Дата публикации: 2015-07-23.

LAYERED ACTIVE REGION LIGHT EMITTING DIODE

Номер патента: US20170207365A1. Автор: Schubert Martin F.,Grundmann Michael. Владелец: . Дата публикации: 2017-07-20.

III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof

Номер патента: US20170236975A1. Автор: Romano Linda,Wang Ping. Владелец: . Дата публикации: 2017-08-17.

SEMICONDUCTOR STRUCTURE HAVING WORD LINE DISPOSED OVER PORTION OF AN OXIDE-FREE DIELECTRIC MATERIAL IN THE NON-ACTIVE REGION

Номер патента: US20210265361A1. Автор: LIAO Wei-Ming,HUANG CHING-CHIA. Владелец: . Дата публикации: 2021-08-26.

Light-emitting device with heavily doped active-region and method for manufacturing the same

Номер патента: US20150263224A1. Автор: Jianping Zhang. Владелец: Qingdao Jason Electric Co Ltd. Дата публикации: 2015-09-17.

III-NITRIDE NANOWIRE LED WITH STRAIN MODIFIED SURFACE ACTIVE REGION AND METHOD OF MAKING THEREOF

Номер патента: US20160260866A1. Автор: Romano Linda,Svensson Patrik,Yi Sungsoo,Gardner Nathan. Владелец: . Дата публикации: 2016-09-08.

PHOTOVOLTAIC CELLS WITH A GRADED ACTIVE REGION ACHIEVED USING STAMP TRANSFER PRINTING

Номер патента: US20160260917A1. Автор: Forrest Stephen R.,Lee Jun Yeob,CHO Yong Joo. Владелец: . Дата публикации: 2016-09-08.

Integrated Assemblies Which Include Metal-Containing Interconnects to Active-Region Pillars, and Methods of Forming Integrated Assemblies

Номер патента: US20200243538A1. Автор: Simsek-Ege Arzum F.. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-07-30.

Vcsel device with multiple stacked active regions

Номер патента: US20200335942A1. Автор: Richard F. Carson,Nein-Yi Li,Mial E. WARREN. Владелец: TriLumina Corp. Дата публикации: 2020-10-22.

BIPOLAR PLATE HAVING A VARIABLE WIDTH OF THE REACTION GAS CHANNELS IN THE INLET REGION OF THE ACTIVE REGION, FUEL-CELL STACK AND FUEL-CELL SYSTEM HAVING BIPOLAR PLATES OF THIS TYPE, AS WELL AS A VEHICLE

Номер патента: US20190229347A1. Автор: Scholz Hannes. Владелец: . Дата публикации: 2019-07-25.

Bipolar plate having a variable width of the reaction channels in the inlet region of the active region, fuel cell stack and fuel cell system having bipolar plates of this type, as well as a vehicle

Номер патента: WO2017220552A1. Автор: Hannes Scholz. Владелец: VOLKSWAGEN AG. Дата публикации: 2017-12-28.

Laser arrangement, has semiconductor laser with monolithically integrated active regions, where two regions emit pump radiations of different wave lengths for pumping different absorption bands of active medium of optically pumped laser

Номер патента: DE102006059700A1. Автор: Martin Müller,Johann Luft,Marc Dr. Philippens,Harald Dr. König. Владелец: OSRAM Opto Semiconductors GmbH. Дата публикации: 2008-04-03.

QUANTUM CASCADE LASER WITH ANGLED ACTIVE REGION AND RELATED METHODS

Номер патента: US20180048118A1. Автор: Lyakh Arkadiy. Владелец: . Дата публикации: 2018-02-15.

QCL WITH WIDE ACTIVE REGION AND THINNED STAGES AND RELATED METHODS

Номер патента: US20190115727A1. Автор: Lyakh Arkadiy,Suttinger Matthew. Владелец: . Дата публикации: 2019-04-18.

VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL) WITH CASCADED ACTIVE REGION

Номер патента: US20210184432A1. Автор: IAKOVLEV Vladimir,Mentovich Elad,Berk Yuri,Sharkaz Tamir. Владелец: . Дата публикации: 2021-06-17.

Active region-less polymer modulator integrated on a common pic platform and method

Номер патента: US20200183201A1. Автор: Michael Lebby,Yasufumi Enami. Владелец: Lightwave Logic Inc. Дата публикации: 2020-06-11.

Integrated assemblies which include metal-containing interconnects to active-region pillars, and methods of forming integrated assemblies

Номер патента: WO2020117337A1. Автор: Arzum F. Simsek-Ege. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2020-06-11.

Integrated circuit memory system with dummy active region

Номер патента: US20070207558A1. Автор: Xiaoyu Chen,Sung Mun Jung,Donghua Liu,Ching Dong Wang,Swee Tuck Woo,Louis Yoke Leng Lim. Владелец: Chartered Semiconductor Manufacturing Pte Ltd. Дата публикации: 2007-09-06.

Integrated circuit memory system with dummy active region

Номер патента: SG135159A1. Автор: Liu Donghua,WOO Swee Tuck,Chen Xiaoyu,Jung Sung Mung,Wang Ching Dong,Lim Yoke Leng Louis. Владелец: Chartered Semiconductor Mfg. Дата публикации: 2007-09-28.

Integrated circuit memory system with dummy active region

Номер патента: US7332378B2. Автор: Xiaoyu Chen,Sung Mun Jung,Donghua Liu,Ching Dong Wang,Swee Tuck Woo,Louis Yoke Leng Lim. Владелец: Chartered Semiconductor Manufacturing Pte Ltd. Дата публикации: 2008-02-19.

SRAM cell layout including arrangement of multiple active regions and multiple gate regions

Номер патента: US11758707B2. Автор: Kedar Janardan Dhori,Shafquat Jahan Ahmed. Владелец: STMicroelectronics International NV Switzerland. Дата публикации: 2023-09-12.

Fluidic device with fluid port orthogonal to functionalized active region

Номер патента: US20240230593A1. Автор: Rio Rivas,Gernot Fattinger. Владелец: Zomedica Biotechnologies LLC. Дата публикации: 2024-07-11.

Acoustic wave resonator with fractal active region and method of forming it

Номер патента: WO2023235645A1. Автор: Thomas A. Winslow,Rathnait LONG,Mihir S. PATEL,Douglas J. CARLSON. Владелец: MACOM Technology Solutions Holdings, Inc.. Дата публикации: 2023-12-07.

PRAMs having a plurality of active regions located vertically in sequence and methods of forming the same

Номер патента: US20060076548A1. Автор: Kyu-Chul Kim,Jae-Hyun Park,Hyeong-Geun An,Yoon-Jong Song,Su-Jin Ahn,Hyung-Joo Youn. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2006-04-13.

Semiconductor device having an electrostatically-bounded active region

Номер патента: US20240284806A1. Автор: Pavel ASEEV,Sebastian Heedt,Gijsbertus DE LANGE. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-08-22.

Virtual reality floor mat activity region

Номер патента: US20190302879A1. Автор: Julia Schwarz,Jason Michael RAY. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2019-10-03.

Fluidic device with fluid port orthogonal to functionalized active region

Номер патента: US11940415B2. Автор: Rio Rivas,Gernot Fattinger. Владелец: Zomedica Biotechnologies LLC. Дата публикации: 2024-03-26.

Semiconductor device having an electrostatically-bounded active region

Номер патента: EP4364543A1. Автор: Pavel ASEEV,Sebastian Heedt,Gijsbertus DE LANGE. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2024-05-08.

Semiconductor structure having word lines intersect with active regions

Номер патента: US11980024B2. Автор: Qu LUO. Владелец: Changxin Memory Technologies Inc. Дата публикации: 2024-05-07.

Semiconductor device having an electrostatically-bounded active region

Номер патента: AU2021454099A1. Автор: Pavel ASEEV,Sebastian Heedt,Gijsbertus DE LANGE. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2023-11-23.

Supporting RMA API over active message

Номер патента: US09632973B2. Автор: Jianxin Xiong,Robert J. WOODRUFF,Frank L. Berry. Владелец: Intel Corp. Дата публикации: 2017-04-25.

Video slice and active region based dual partial encryption

Номер патента: CA2746510C. Автор: Brant L. Candelore,Henry Derovanessian,Leo M. Pedlow, JR.. Владелец: Sony Electronics Inc. Дата публикации: 2014-09-16.

Video content activity regions

Номер патента: US20190370552A1. Автор: Fabian Nater,Gaurav Bradoo,Rahim KA,Tingshan Gou. Владелец: Logitech Europe SA. Дата публикации: 2019-12-05.

Cavities and active regions

Номер патента: US20220030350A1. Автор: John Fitzgerald Coakley,Claudia Sofia LEHMANN FERNANDEZ. Владелец: Carbon Air Ltd. Дата публикации: 2022-01-27.

Cavities and active regions

Номер патента: EP3887036A1. Автор: John Fitzgerald Coakley,Claudia Sofia LEHMANN FERNANDEZ,Aaron William THORNTON. Владелец: Carbon Air Ltd. Дата публикации: 2021-10-06.

Cavities and active regions

Номер патента: EP3887035A1. Автор: John Fitzgerald Coakley,Claudia Sofia LEHMANN FERNANDEZ. Владелец: Carbon Air Ltd. Дата публикации: 2021-10-06.

Ink jet printhead having a ground bus that overlaps transistor active regions

Номер патента: CA2416837C. Автор: Joseph M. Torgerson,David M. Hurst. Владелец: Hewlett Packard Co. Дата публикации: 2008-04-01.

Composite gesture for switching active regions

Номер патента: US09996242B2. Автор: Shigeaki Nishihashi. Владелец: Denso Corp. Дата публикации: 2018-06-12.

Virtual space mapping of a variable activity region

Номер патента: US09399167B2. Автор: John Clavin,Peter Glenn Sarrett,Russell Glaser,Steven Michael Beeman,Scott Henson,Robert Sheldon Walker. Владелец: Microsoft Technology Licensing LLC. Дата публикации: 2016-07-26.

Article of footwear having active regions and secure regions

Номер патента: US09961962B2. Автор: Sang Jeong Lee. Владелец: Action Sports Equipment Inc. Дата публикации: 2018-05-08.

System for control over activator injection in diesel intake pipeline

Номер патента: RU2518711C1. Автор: Александр Петрович Уханов,Денис Александрович Уханов,Михаил Владимирович Рыблов. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Пензенская государственная сельскохозяйственная академия". Дата публикации: 2014-06-10.

System for automatic control over activator feed into diesel engine intake pipeline

Номер патента: RU2453716C2. Автор: Александр Петрович Уханов,Денис Александрович Уханов,Валерий Анатольевич Рачкин. Владелец: ФГОУ ВПО "Пензенская государственная сельскохозяйственная академия". Дата публикации: 2012-06-20.

Method utilizing dummy patterns to fabricate active region for stabilizing lithographic process

Номер патента: US20030212981A1. Автор: Chih-Hao Wang,Chong-Jen Huang,Hsin-Huei Chen,Jia-Rong Chiou,Kuong-Wen Liu. Владелец: Macronix International Co Ltd. Дата публикации: 2003-11-13.

Method for interferential current stimulation by complex active regions

Номер патента: US20170182315A1. Автор: Kou-Chang Hsieh. Владелец: Individual. Дата публикации: 2017-06-29.

Read operations for active regions of a memory device

Номер патента: US12050786B2. Автор: Lingyun Wang,Bin Zhao. Владелец: Micron Technology Inc. Дата публикации: 2024-07-30.

Soi-based opto-electronic device including corrugated active region

Номер патента: WO2007146235A3. Автор: Robert Keith Montgomery,Vipulkumar Patel. Владелец: Vipulkumar Patel. Дата публикации: 2008-04-24.

Soi-based opto-electronic device including corrugated active region

Номер патента: WO2007146235A2. Автор: Robert Keith Montgomery,Vipulkumar Patel. Владелец: Sioptical. Inc.. Дата публикации: 2007-12-21.

Active region adaptations for design domains in topology optimizations

Номер патента: US11914934B2. Автор: Lucia MIRABELLA,Suraj Ravi MUSUVATHY,Yu-Chin Chan. Владелец: Siemens Industry Software Inc. Дата публикации: 2024-02-27.

Active region adaptations for design domains in topology optimizations

Номер патента: WO2020055516A1. Автор: Lucia MIRABELLA,Suraj Ravi MUSUVATHY,Yu-Chin Chan. Владелец: Siemens Industry Software Inc.. Дата публикации: 2020-03-19.

Active region adaptations for design domains in topology optimizations

Номер патента: EP3834120A1. Автор: Lucia MIRABELLA,Suraj Ravi MUSUVATHY,Yu-Chin Chan. Владелец: Siemens Industry Software Inc. Дата публикации: 2021-06-16.

Active region adaptations for design domains in topology optimizations

Номер патента: US20210200921A1. Автор: Lucia MIRABELLA,Suraj Ravi MUSUVATHY,Yu-Chin Chan. Владелец: Siemens Industry Software Inc. Дата публикации: 2021-07-01.

Modified binary search for transfer function active region

Номер патента: US20130222046A1. Автор: Igor Furlan. Владелец: Fairchild Semiconductor Corp. Дата публикации: 2013-08-29.

Read operations for active regions of a memory device

Номер патента: US20230367491A1. Автор: Lingyun Wang,Bin Zhao. Владелец: Micron Technology Inc. Дата публикации: 2023-11-16.

Method and system to characterize transcriptionally active regions and quantify sequence abundance for large scale sequencing data

Номер патента: US20090287420A1. Автор: Xitong Li,Kenneth Stineman. Владелец: Genomic Health Inc. Дата публикации: 2009-11-19.

Method enabling the detection of the speech signal activity regions

Номер патента: US20240013803A1. Автор: Selma OZAYDIN. Владелец: Cankaya Universitesi. Дата публикации: 2024-01-11.

Memantine protects inflammation-related degeneration of dopamine neurons through inhibition of over-activated microglia and release of neurotrophic factors from astroglia

Номер патента: EP2214713A1. Автор: Jau-Shyong Hong,Hung-Ming Wu,Ru-Band Lu. Владелец: Lu Ru Band. Дата публикации: 2010-08-11.

Memantine protects inflammation-related degeneration of dopamine neurons through inhibition of over-activated microglia and release of neurotrophic factors from astroglia

Номер патента: US20090253803A1. Автор: Jau-Shyong Hong,Hung-Ming Wu,Ru-Band Lu,Shiou-Lan Chen. Владелец: Individual. Дата публикации: 2009-10-08.

Memantine Protects Inflammation-Related Degeneration of Dopamine Neurons Through Inhibition of Over-Activated Microglia and Release of Neurotrophic Factors From Astroglia

Номер патента: US20150080475A1. Автор: Jau-Shyong Hong,Hung-Ming Wu,Ru-Band Lu,Shiou-Lan Chen. Владелец: Individual. Дата публикации: 2015-03-19.

Bottom select gate contacts for center staircase structures in three-dimensional memory devices

Номер патента: US12133385B2. Автор: Qiang Tang,Jason Guo. Владелец: Yangtze Memory Technologies Co Ltd. Дата публикации: 2024-10-29.

Circuit boards transfer device for handling and treatment equipment, includes threshold/gate contacting emersion wall in resting position.

Номер патента: DE10143258A1. Автор: Heinz Kappler. Владелец: Gebrueder Schmid GmbH. Дата публикации: 2003-03-20.

Bottom select gate contacts for center staircase structures in three-dimensional memory devices

Номер патента: WO2022094796A1. Автор: Qiang Tang,Jason Guo. Владелец: Yangtze Memory Technologies Co., Ltd.. Дата публикации: 2022-05-12.

Bottom selective gate contact for center stepped structure in three-dimensional storage device

Номер патента: TWI782391B. Автор: 曉江 郭,湯強. Владелец: 大陸商長江存儲科技有限責任公司. Дата публикации: 2022-11-01.

Semiconductor device having polycrystalline silicon region forming a lead-out electrode region and extended beneath active region of transistor

Номер патента: US5391912A. Автор: Kazuo Nakazato,Masatada Horiuchi. Владелец: HITACHI LTD. Дата публикации: 1995-02-21.

Piezoceramic multilayer actuator with a transistion region between the active region and the inactive head and foot regions

Номер патента: US20030001463A1. Автор: Reiner Bindig,Jürgen Schmidt,Günter HELKE,Hans-Jürgen Schreiner,Matthias Simmerl. Владелец: CERAMTEC GMBH. Дата публикации: 2003-01-02.

Electronic display device e.g. monochrome organic LED device, for forming luminous badge, has continuous active region defined by non-ablated part of proximal electrode, where part extends continuously for electrical power supply of region

Номер патента: FR2932598A1. Автор: Christophe Prat. Владелец: Commissariat a lEnergie Atomique CEA. Дата публикации: 2009-12-18.

Photovoltaic cells with a graded active region achived using stamp transfer printing

Номер патента: WO2015061770A1. Автор: Stephen R. Forrest,Jun Yeob Lee,Yong Joo Cho. Владелец: Industray-Academic Cooperation Foundation, Dankook University. Дата публикации: 2015-04-30.

DEVICES FOR SHIELDING A SIGNAL LINE OVER AN ACTIVE REGION

Номер патента: US20150015319A1. Автор: Tanzawa Toru. Владелец: . Дата публикации: 2015-01-15.

FLUIDIC DEVICE WITH FLUID PORT ORTHOGONAL TO FUNCTIONALIZED ACTIVE REGION

Номер патента: US20170122912A1. Автор: Rivas Rio,Fattinger Gernot. Владелец: . Дата публикации: 2017-05-04.

BAW SENSOR WITH ENHANCED SURFACE AREA ACTIVE REGION

Номер патента: US20170134002A1. Автор: Rivas Rio,Andrus Craig. Владелец: . Дата публикации: 2017-05-11.

ACOUSTIC RESONATOR WITH REDUCED MECHANICAL CLAMPING OF AN ACTIVE REGION FOR ENHANCED SHEAR MODE RESPONSE

Номер патента: US20170149408A1. Автор: Morton Rick,Belsick John. Владелец: . Дата публикации: 2017-05-25.

DETECTING ACTIVE REGION IN COLLABORATIVE COMPUTING SESSIONS USING VOICE INFORMATION

Номер патента: US20150163259A1. Автор: Huang Haihua,Zhang Yaqing,Xia Kejun. Владелец: CISCO TECHNOLOGY, INC.. Дата публикации: 2015-06-11.

FLUIDIC DEVICE WITH FLUID PORT ORTHOGONAL TO FUNCTIONALIZED ACTIVE REGION

Номер патента: US20200150088A1. Автор: Rivas Rio,Fattinger Gernot. Владелец: . Дата публикации: 2020-05-14.

TO-CAN PHOTODIODE PACKAGE WITH INTEGRATED COUPLING MEMBER AND EXPOSED ACTIVE REGION, AND A RECEIVER OPTICAL SUBASSEMBLY (ROSA) USING THE SAME

Номер патента: US20180210156A1. Автор: Lii Justin,LIN Kai-Sheng,LIANG YongXuan. Владелец: . Дата публикации: 2018-07-26.

Active region determination for line generation in regionalized rasterizer displays

Номер патента: US20040169655A1. Автор: Ronald Larson,Thomas Thrasher. Владелец: Individual. Дата публикации: 2004-09-02.

Removal of diene impurities from alkenes or alkanes over activated magnesium oxide under ultraviolet radiation

Номер патента: US4414083A. Автор: Filippo Pennella. Владелец: Phillips Petroleum Co. Дата публикации: 1983-11-08.

ARTICLE OF FOOTWEAR HAVING ACTIVE REGIONS AND SECURE REGIONS

Номер патента: US20170049186A1. Автор: LEE Sang Jeong. Владелец: . Дата публикации: 2017-02-23.

ARTICLE OF FOOTWEAR HAVING ACTIVE REGIONS AND SECURE REGIONS

Номер патента: US20180153258A1. Автор: LEE Sang Jeong. Владелец: ACTION SPORTS EQUIPMENT, INC.. Дата публикации: 2018-06-07.

Comprise the retroreflective articles of optical activity region and optics non-active region

Номер патента: CN102858528B. Автор: 肯尼思·L·史密斯,迈克尔·本顿·弗里,比马尔·V·塔卡尔,雷蒙德·C·基乌. Владелец: 3M Innovative Properties Co. Дата публикации: 2016-05-11.

Removal of sulfides in spent caustic stream over active solid phase catalysts

Номер патента: CA2948288C. Автор: Choudary Nettem Venkateswarlu,Sriganesh Gandham,Peddy Venkata Chalapathi Rao,Ramesh Kanaparthi. Владелец: Hindustan Petroleum Corp Ltd. Дата публикации: 2020-12-01.

TREATMENTS FOR CORONAVIRUS INFECTIONS, CYTOKINE RELEASE SYNDROME, CYTOKINE STORM SYNDROME, OR DISEASES ASSOCIATED WITH OVER-ACTIVATION OF INFLAMMASOMES THROUGH THE USE OF INFLAMMATORY CASPASE INHIBITORS.

Номер патента: FR3114741A1. Автор: Etienne Jacotot,Bernadette BUNG,Newton Howard. Владелец: Individual. Дата публикации: 2022-04-08.

Hydrocarbon conversion over activated erionite

Номер патента: US3925191A. Автор: William P Burgess. Владелец: Mobil Oil Corp. Дата публикации: 1975-12-09.

Memantine protects inflammation-related degeneration of dopamine neurons through inhibition of over-activated microglia and release of neurotrophic factors from astroglia

Номер патента: EP2214713A4. Автор: Jau-Shyong Hong,Hung-Ming Wu,Ru-Band Lu. Владелец: Lu Ru Band. Дата публикации: 2010-12-29.

MODIFIED BINARY SEARCH FOR TRANSFER FUNCTION ACTIVE REGION

Номер патента: US20130222046A1. Автор: Furlan Igor. Владелец: Fairchild Semiconductor Corporation. Дата публикации: 2013-08-29.

Display device and method of indicating an active region in a multi-window display

Номер патента: US20200004387A1. Автор: Jung-hwan Choi,Tae-soo Kim,Young-Jin Kim,Kang-Tae KIM,Sung-Hee Kim,Dae-Wook PARK. Владелец: SAMSUNG ELECTRONICS CO LTD. Дата публикации: 2020-01-02.

DISSIPATING HEAT FROM AN ACTIVE REGION OF AN OPTICAL DEVICE

Номер патента: US20210018769A1. Автор: Norberg Erik,Roth Jonathan Edgar. Владелец: . Дата публикации: 2021-01-21.

RESIZING AN ACTIVE REGION OF A USER INTERFACE

Номер патента: US20190056857A1. Автор: Fong Jeffrey C.,MAMARIL Bryan K.. Владелец: Microsoft Technology Licensing, LLC. Дата публикации: 2019-02-21.

ACTIVE REGION-LESS MODULATOR AND METHOD

Номер патента: US20210141250A1. Автор: LEBBY MICHAEL,Liu Zhiming,Enami Yasufumi. Владелец: Lightwave Logic Inc.. Дата публикации: 2021-05-13.

Active region-less modulator and method

Номер патента: US20210141251A1. Автор: Zhiming Liu,Michael Lebby. Владелец: Lightwave Logic Inc. Дата публикации: 2021-05-13.

SUPPORTING MULTIPLE ACTIVE REGIONS IN MEMORY DEVICES

Номер патента: US20220300195A1. Автор: Bert Luca. Владелец: . Дата публикации: 2022-09-22.

AUTOMATIC ACTIVE REGION ZOOMING

Номер патента: US20160170617A1. Автор: Ouyang Hua,Yin Huahua,Shi Qi,Chang Yulin,Zhou Guoxin. Владелец: . Дата публикации: 2016-06-16.

ABSORBENT ARTICLE COMPRISING AN ACTIVATED REGION

Номер патента: US20150173973A1. Автор: LaVon Gary Dean,Smith Kevin Michael,HENRICH Thomas,NOGALES Luke,STRUBE John. Владелец: . Дата публикации: 2015-06-25.

ACTIVE REGION ADAPTATIONS FOR DESIGN DOMAINS IN TOPOLOGY OPTIMIZATIONS

Номер патента: US20210200921A1. Автор: Musuvathy Suraj Ravi,Mirabella Lucia,Chan Yu-Chin. Владелец: . Дата публикации: 2021-07-01.

METHOD FOR INTERFERENTIAL CURRENT STIMULATION BY COMPLEX ACTIVE REGIONS

Номер патента: US20170182315A1. Автор: Hsieh Kou-Chang. Владелец: . Дата публикации: 2017-06-29.

ACTIVE REGION DETERMINATION FOR HEAD MOUNTED DISPLAYS

Номер патента: US20170205892A1. Автор: Petrovskaya Anna,Varvak Peter,Geraschenko Anton,Koenig Dylan,Helmy Youssri. Владелец: . Дата публикации: 2017-07-20.

ACTIVE REGIONS OF AN IMAGE WITH ACCESSIBLE LINKS

Номер патента: US20150242522A1. Автор: Tang Feng,Lin Qian. Владелец: . Дата публикации: 2015-08-27.

VIDEO ACTIVE REGION BATCHING

Номер патента: US20190236372A1. Автор: Jain Puneet,Stone Theodore A.,Stone Nathaniel,Kim Kyu-Han. Владелец: . Дата публикации: 2019-08-01.

GATE ELECTRODE AND GATE CONTACT PLUG LAYOUTS FOR INTEGRATED CIRCUIT FIELD EFFECT TRANSISTORS

Номер патента: US20120001271A1. Автор: YAMADA Satoru,Chae Kyo-Suk,CHOI Young-Jin,Kim Wook-Je,HAN Sang-Yeon. Владелец: . Дата публикации: 2012-01-05.

METHOD AND APPARATUS FOR IMPROVING GATE CONTACT

Номер патента: US20120001259A1. Автор: ZHU Ming,Young Bao-Ru,Chuang Harry Hak-Lay,Wu Wei Cheng,Chung Sheng-Chen,Ng Jin-Aun,YOU Kai-Shyang. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-01-05.

Video Slice and Active Region Based Multiple Partial Encryption

Номер патента: US20120002809A1. Автор: Candelore Brant L.,Pedlow,Derovanessian Henry,JR. Leo M.. Владелец: . Дата публикации: 2012-01-05.

Method of determining temperature of active region of light-emitting diode

Номер патента: RU2473149C1. Автор: Александр Николаевич Пихтин,Сергей Анатольевич Тарасов,Екатерина Андреевна Менькович. Владелец: Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Санкт-Петербургский государственный электротехнический университет "ЛЭТИ" им. В.И. Ульянова (Ленина)". Дата публикации: 2013-01-20.

Method for surface treatment of epitaxial silicon wafers to form active regions

Номер патента: RU2565380C2. Автор: Тагир Абдурашидович Исмаилов,Бийке Алиевна Шангереева,Юсуп Пахрутдинович Шангереев,Азамат Ибрагимович Муртазалиев. Владелец: Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту). Дата публикации: 2015-10-20.

Method of measuring life-tine of minority carriers in active region of light-emitting diode

Номер патента: RU2018993C1. Автор: Н.В. Мороз,А.А. Птащенко,Б.В. Цап,Д.В. Мелконян. Владелец: Мороз Наталья Владимировна. Дата публикации: 1994-08-30.

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

Номер патента: US20140077305A1. Автор: Ghani Tahir,Cappellani Annalisa,Pethe Abhijit Jayant,Webb Clair,BOHR Mark,GOMEZ Harry. Владелец: . Дата публикации: 2014-03-20.

SYSTEM AND METHOD OF PLATING CONDUCTIVE GATE CONTACTS ON METAL GATES FOR SELF-ALIGNED CONTACT INTERCONNECTIONS

Номер патента: US20120313153A1. Автор: . Владелец: . Дата публикации: 2012-12-13.

Novel methods to reduce gate contact resistance for AC reff reduction

Номер патента: US20120038009A1. Автор: Toh Eng Huat,Lee Jae Gon,Tan Chung Foong,Quek Elgin,Yin Chunshan. Владелец: . Дата публикации: 2012-02-16.

METHOD AND APPARATUS FOR IMPROVING GATE CONTACT

Номер патента: US20120074498A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-03-29.

ON-GATE CONTACTS IN A MOS DEVICE

Номер патента: US20120248512A1. Автор: . Владелец: Cambridge Silicon Radio Limited. Дата публикации: 2012-10-04.

Method and Structure For Forming ETSOI Capacitors, Diodes, Resistors and Back Gate Contacts

Номер патента: US20130146953A1. Автор: Cheng Kangguo,Reznicek Alexander,Khakifirooz Ali,Adam Thomas N.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-06-13.

EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR WITH BACK GATE CONTACT

Номер патента: US20140103436A1. Автор: Bedell Stephen W.,Khakifirooz Ali,Shahidi Ghavam G.,Shahrjerdi Davood,Hekmatshoartabari Bahman. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-04-17.

EXTREMELY THIN SEMICONDUCTOR-ON-INSULATOR WITH BACK GATE CONTACT

Номер патента: US20140103533A1. Автор: Bedell Stephen W.,Khakifirooz Ali,Shahidi Ghavam G.,Shahrjerdi Davood,Hekmatshoartabari Bahman. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2014-04-17.

Semiconductor Device and Method of Singulating Thin Semiconductor Wafer on Carrier Along Modified Region Within Non-Active Region Formed by Irradiating Energy

Номер патента: US20120286429A1. Автор: . Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2012-11-15.

SOURCE/DRAIN ZONES WITH A DELECTRIC PLUG OVER AN ISOLATION REGION BETWEEN ACTIVE REGIONS AND METHODS

Номер патента: US20130168756A1. Автор: Sun Jie,Haller Gordon,Hopkins John,Mathew James. Владелец: . Дата публикации: 2013-07-04.

Semiconductor Device and Method of Singulating Semiconductor Wafer along Modified Region within Non-Active Region Formed by Irradiating Energy through Mounting Tape

Номер патента: US20130249079A1. Автор: Lee HunTeak,Yang Daewook,Ko Yeongbeom. Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2013-09-26.

Method for forming active region self-aligning to deep trench

Номер патента: TW494535B. Автор: Brian S Lee. Владелец: Promos Technologies Inc. Дата публикации: 2002-07-11.

Method of measuring amount of overlap deviation between gate structure and active region

Номер патента: TW548770B. Автор: Jeng-Ping Lin,Ming-Cheng Chang. Владелец: Nanya Technology Corp. Дата публикации: 2003-08-21.

Image sensor package having sealed cavity over active area

Номер патента: TW517397B. Автор: Steven Webster,Thomas P Glenn. Владелец: Amkor Technology Inc. Дата публикации: 2003-01-11.

SEMICONDUCTOR DEVICES WITH EXTENDED ACTIVE REGIONS

Номер патента: US20120007155A1. Автор: HALL MARK D.,Abeln Glenn C.,Fu Chong-Cheng. Владелец: FREESCALE SEMICONDUCTOR, INC. Дата публикации: 2012-01-12.

Transistor with Embedded Strain-Inducing Material and Dummy Gate Electrodes Positioned Adjacent to the Active Region

Номер патента: US20120025315A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-02-02.

LIGHT-EMITTING DEVICES WITH TWO-DIMENSIONAL COMPOSITION-FLUCTUATION ACTIVE-REGION AND METHOD FOR FABRICATING THE SAME

Номер патента: US20120049151A1. Автор: . Владелец: INVENLUX CORPORATION. Дата публикации: 2012-03-01.

Forming Crown Active Regions for FinFETs

Номер патента: US20120049294A1. Автор: Chen Chen-Ping,Lin Hui-Min,Huang Ming-Jie,Lee Tung Ying. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-03-01.

SURFACE EMITTING LASER WITH CURRENT CONSTRICTION LAYER AND MULTIPLE ACTIVE REGIONS

Номер патента: US20120076163A1. Автор: TAKEUCHI Tetsuya,Sekiguchi Yoshinobu. Владелец: CANON KABUSHIKI KAISHA. Дата публикации: 2012-03-29.

LOCALIZED IMPLANT INTO ACTIVE REGION FOR ENHANCED STRESS

Номер патента: US20120100685A1. Автор: Nowak Edward J.,ANDERSON Brent A.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2012-04-26.

Active Region Patterning in Double Patterning Processes

Номер патента: US20120108036A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-05-03.

User Interface Pipe Scalers with Active Regions

Номер патента: US20120127193A1. Автор: . Владелец: . Дата публикации: 2012-05-24.

Reducing Device Performance Drift Caused by Large Spacings Between Active Regions

Номер патента: US20120132987A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-05-31.

SEMICONDUCTOR DEVICE INCLUDING LINE-TYPE ACTIVE REGION AND METHOD FOR MANUFACTURING THE SAME

Номер патента: US20120146121A1. Автор: . Владелец: HYNIX SEMICONDUCTOR INC.. Дата публикации: 2012-06-14.

METHODS OF FABRICATING NONVOLATILE MEMORY DEVICES INCLUDING VOIDS BETWEEN ACTIVE REGIONS AND RELATED DEVICES

Номер патента: US20120202335A1. Автор: Han Jee-Hoon,Hur Sung-Hoi,Park Young-Woo,Lee Dong-sik,You Jang-Hyun,Joo Sang-Ick. Владелец: . Дата публикации: 2012-08-09.

PERFORMANCE ENHANCEMENT IN TRANSISTORS BY REDUCING THE RECESSING OF ACTIVE REGIONS AND REMOVING SPACERS

Номер патента: US20120235215A1. Автор: Flachowsky Stefan,Hoentschel Jan. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-09-20.

REDUCING DEFECT RATE DURING DEPOSITION OF A CHANNEL SEMICONDUCTOR ALLOY INTO AN IN SITU RECESSED ACTIVE REGION

Номер патента: US20120235249A1. Автор: . Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2012-09-20.

Shallow Source and Drain Architecture in an Active Region of a Semiconductor Device Having a Pronounced Surface Topography by Tilted Implantation

Номер патента: US20120241864A1. Автор: . Владелец: . Дата публикации: 2012-09-27.

Layouts of POLY Cut Openings Overlapping Active Regions

Номер патента: US20120258592A1. Автор: . Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2012-10-11.

METHODS AND DEVICES FOR SHIELDING A SIGNAL LINE OVER AN ACTIVE REGION

Номер патента: US20120319184A1. Автор: Tanzawa Toru. Владелец: MICRON TECHNOLOGY, INC.. Дата публикации: 2012-12-20.

CROSS-COUPLING OF GATE CONDUCTOR LINE AND ACTIVE REGION IN SEMICONDUCTOR DEVICES

Номер патента: US20130037864A1. Автор: Sardesai Viraj Y.,Wong Robert C.. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-02-14.

Field Effect Transistor Device with Raised Active Regions

Номер патента: US20130069159A1. Автор: Doris Bruce B.,Cheng Kangguo,Reznicek Alexander,Khakifirooz Ali. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-03-21.

OPTICAL PROXIMITY CORRECTION FOR ACTIVE REGION DESIGN LAYOUT

Номер патента: US20130069162A1. Автор: Lin Chih-Hsun,Wang Ling-Sung,Chao Chih-kang,Lin Mei-Hsuan,Lu Chih-Chan,Wang Jen-Pan. Владелец: Taiwan Semiconductor Manufacturing Company, Ltd.. Дата публикации: 2013-03-21.

Semiconductor Device and Method of Forming Semiconductor Die with Active Region Responsive to External Stimulus

Номер патента: US20130069252A1. Автор: Shim Il Kwon,Han Byung Joon,Kuan Heap Hoe. Владелец: STATS CHIPPAC, LTD.. Дата публикации: 2013-03-21.

Field Effect Transistor Device with Raised Active Regions

Номер патента: US20130071979A1. Автор: Doris Bruce B.,Cheng Kangguo,Reznicek Alexander,Khakifirooz Ali. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-03-21.

Tucked Active Region Without Dummy Poly For Performance Boost and Variation Reduction

Номер патента: US20130087832A1. Автор: Yu Xiaojun,Greene Brian J.,Liang Yue. Владелец: INTERNATIONAL BUSINESS MACHINES CORPORATION. Дата публикации: 2013-04-11.

HOLE BLOCKING LAYER FOR THE PREVENTION OF HOLE OVERFLOW AND NON-RADIATIVE RECOMBINATION AT DEFECTS OUTSIDE THE ACTIVE REGION

Номер патента: US20130100978A1. Автор: Nakamura Shuji,DenBaars Steven P.,Hsu Po Shan,Hardy Matthew T.,Speck James Stephen. Владелец: The Regents of the University of California. Дата публикации: 2013-04-25.

Quantum Cascade Laser Design With Stepped Well Active Region

Номер патента: US20130136148A1. Автор: Caneau Catherine Genevieve,Xie Feng,Zah Chung-En. Владелец: . Дата публикации: 2013-05-30.

SOURCE AND DRAIN ARCHITECTURE IN AN ACTIVE REGION OF A P-CHANNEL TRANSISTOR BY TILTED IMPLANTATION

Номер патента: US20130320409A1. Автор: Scheiper Thilo. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2013-12-05.

SEMICONDUCTOR DEVICES FORMED ON A CONTINUOUS ACTIVE REGION WITH AN ISOLATING CONDUCTIVE STRUCTURE POSITIONED BETWEEN SUCH SEMICONDUCTOR DEVICES, AND METHODS OF MAKING SAME

Номер патента: US20140001563A1. Автор: KENGERI Subramani,Johnson Scott,VENKATESAN Suresh,RASHED Mahbub,Lin Irene,Nguyen Chinh,Kim Jeff,Tarabbia Marc,Doman David,Soss Steve. Владелец: GLOBALFOUNDRIES INC.. Дата публикации: 2014-01-02.

NON-PLANAR SEMICONDUCTOR DEVICE HAVING GROUP III-V MATERIAL ACTIVE REGION WITH MULTI-DIELECTRIC GATE STACK

Номер патента: US20140084343A1. Автор: Mukherjee Niloy,Chu-Kung Benjamin,Dewey Gilbert,Pillarisetty Ravi,Radosavljevic Marko. Владелец: . Дата публикации: 2014-03-27.

NON-PLANAR SEMICONDUCTOR DEVICE HAVING GERMANIUM-BASED ACTIVE REGION WITH RELEASE ETCH-PASSIVATION SURFACE

Номер патента: US20140091279A1. Автор: Rachmady Willy,JR. Robert B.,KACHIAN Jessica S.,TURKOT. Владелец: . Дата публикации: 2014-04-03.

Бесплатный поиск патентной информации. Построение патентных ландшафтов и отчетов.

Главная
Проекты и услуги
Контакты

© 2021-2022 - All Rights Reserved - разработано Ecoruspace.me.