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Semiconductor package including underfill material layer and method of forming the same

Номер патента: US11764192B2
Опубликовано: 19-09-2023
Автор(ы): Hyuekjae Lee, Jihwan HWANG, JiHwan SUH, Jiseok Hong, Soyoun LEE, Taehun Kim
Принадлежит: SAMSUNG ELECTRONICS CO LTD
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