An apparatus for the backside gas cooling of a wafer in a batch ion implantation system
Номер патента: EP1320866A2
Опубликовано: 25-06-2003
Автор(ы): Bryan Christopher Lagos, Dale Keith Stone, David James Chipman, Gary Jay Rosen, Robert John Mitchell
Принадлежит: Axcelis Technologies Inc
Опубликовано: 25-06-2003
Автор(ы): Bryan Christopher Lagos, Dale Keith Stone, David James Chipman, Gary Jay Rosen, Robert John Mitchell
Принадлежит: Axcelis Technologies Inc
Реферат: The invention provides apparatus by which a cooling gas (302) is supplied from a stationary source to the back side of batch ion implanter workpieces being implanted in a rotating or spinning batch implanter process disk (282, 380). The cooling gas (302) provides improved heat transfer from the workpieces to the process disk (282, 380), which may be advantageously combined with circulation of cooling fluid through passages in the process disk to remove heat therefrom. The invention further includes a rotary feedthrough (300) employed to transfer the cooling gas (302) from a stationary housing (210) to a gas chamber in a rotating shaft (270) which spins the batch implanter process disk (282, 380). In addition a seal apparatus is provided which seals the cooling gas (302) applied to the back sides of the workpieces from the vacuum in which the front sides of the workpieces are implanted.
Monitoring device, ion implantation device, and monitoring method
Номер патента: US20160217973A1. Автор: Makoto Ishida. Владелец: Lapis Semiconductor Co Ltd. Дата публикации: 2016-07-28.