SEMICONDUCTOR MEMORY DEVICE WITH BIT LINE CONTACT STRUCTURE AND METHOD OF FORMING THE SAME.

SEMICONDUCTOR MEMORY DEVICE WITH BIT LINE CONTACT STRUCTURE AND METHOD OF FORMING THE SAME

Номер патента: US20180240705A1
Опубликовано: 23-08-2018
Автор(ы): Chang Feng-Yi, Kuo Ming-Feng, Lee Fu-Che, TUNG Yu-Cheng, Tzou Shih-Fang
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