Resistor and resistor-transistor-logic circuit with gan structure and method of manufacturing the same.

Resistor and resistor-transistor-logic circuit with gan structure and method of manufacturing the same

Номер патента: US20230223400A1
Опубликовано: 13-07-2023
Автор(ы): Chien-Liang Wu, Kuo-Hsing Lee, Sheng-Yuan Hsueh, Te-Wei Yeh, Yi-Chun Chen
Принадлежит: United Microelectronics Corp
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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Resistor and resistor-transistor-logic circuit with gan structure and method of manufacturing the same

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