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  • Heterostructure for a high electron mobility transistor and a method of producing the same

Heterostructure for a high electron mobility transistor and a method of producing the same

Номер патента: US12002881B2
Опубликовано: 04-06-2024
Автор(ы): Jr-Tai Chen, Olof Kordina
Принадлежит: SweGaN AB
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