Diamond device or structure and method for producing a diamond device or structure
Номер патента: EP4348700A1
Опубликовано: 10-04-2024
Автор(ы): Elison De Nazareth Matioli, Mehdi Naamoun, Reza SOLEIMAN ZADEH ARDEBILI
Принадлежит: Ecole Polytechnique Federale de Lausanne EPFL
Опубликовано: 10-04-2024
Автор(ы): Elison De Nazareth Matioli, Mehdi Naamoun, Reza SOLEIMAN ZADEH ARDEBILI
Принадлежит: Ecole Polytechnique Federale de Lausanne EPFL
Реферат: The present invention concerns a diamond device or structure comprising at least one supporting layer or material including at least one or a plurality of support structures inside the at least one supporting layer or material; a plurality of recesses defined by the at least one or the plurality of support structures; and at least one diamond micro-seed and a plurality of diamond nano-seeds located in each recess or in the plurality of recesses.
Silicon nitride film of semiconductor element, and method and apparatus for producing silicon nitride film
Номер патента: EP2579300A4. Автор: Seiji Nishikawa. Владелец: Mitsubishi Heavy Industries Ltd. Дата публикации: 2013-12-18.