Inner voltage monitoring device in semiconductor memory device and method for monitoring the same .

Inner voltage monitoring device in semiconductor memory device and method for monitoring the same

Номер патента: KR100859832B1
Опубликовано: 23-09-2008
Автор(ы): 도창호
Принадлежит: 주식회사 하이닉스반도체
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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