Chamber for vibrational and environmental isolation of thin wafers
Номер патента: EP4070035A1
Опубликовано: 12-10-2022
Автор(ы): Christopher Alan Lee, John Weston Frankovich, Matthew Ronald Millecchia
Принадлежит: Corning Inc
Опубликовано: 12-10-2022
Автор(ы): Christopher Alan Lee, John Weston Frankovich, Matthew Ronald Millecchia
Принадлежит: Corning Inc
Реферат: Measurement cavities described herein include a cylindrical chamber having a first open end and a second open end; a first cap covering the first open end of the cylindrical chamber and a second cap covering the second open end of the cylindrical chamber, wherein the first and second caps hermetically seal the cylindrical chamber and wherein the first cap is rigidly coupled to the second cap; and a wafer holder positioned within and coupled to the cylindrical chamber. The measurement cavity has a mass m, a stiffness k, and a damping constant c configured such that the transmissibility of an input force F at 60 Hz in the measurement cavity is reduced by a factor of at least 10 and the measurement cavity has a natural frequency of greater than 300 Hz.
Methods and systems for material property profiling of thin films
Номер патента: US20190148248A1. Автор: Bulent M. Basol,Jalal Ashjaee,Abhijeet Joshi. Владелец: Active Layer Parametrics Inc. Дата публикации: 2019-05-16.