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  • Transistor with a negative capacitance and a method of creating the same

Transistor with a negative capacitance and a method of creating the same

Номер патента: US20220302315A1
Опубликовано: 22-09-2022
Автор(ы): Chia-Cheng Ho, FENG Yuan, Jin Cai, Ming-Shiang LIN, Tung Ying Lee, Tzu-Chung Wang
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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