Semiconductor devices and methods of manufacturing the same.

Semiconductor devices and methods of manufacturing the same

Номер патента: US11756879B2
Опубликовано: 12-09-2023
Автор(ы): Hui-Jung TSAI, Hung-Jui Kuo, Jyun-Siang Peng, Keng-Han Lin
Принадлежит: Taiwan Semiconductor Manufacturing Co TSMC Ltd
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Рисунок 1. Взаимосвязь патентов (ближайшие 20).

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